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www.epc-co.com EPC - The leader in GaN Technology 1 The eGaN ® FET Journey Continues GaN-on-Si in Power Conversion Alex Lidow, CEO October 2016
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www.epc-co.comEPC - The leader in GaN Technology 11
The eGaN® FET Journey Continues
GaN-on-Si in Power Conversion Alex Lidow, CEO
October 2016
www.epc-co.comEPC - The leader in GaN Technology 2
Agenda
• Howfarhavewecome?• Whatpathsarewetaking?• Where istheleverageforintegration?• Theroadahead.
www.epc-co.comEPC - The leader in GaN Technology 3
Fast Moving Technology
Gen 1,2,3,4 FETs and ICs2010-2015
30 V - 450 V
Higher Scale Integrated Circuits
Generation 5Smaller, Faster, Less Cost
www.epc-co.comEPC - The leader in GaN Technology 4
Coming October 31, 2016
EPC2010C25 mOhm
6.06 mm2
EPC204625 mOhm
2.82 mm2
EPC2001C7 mOhm
6.99 mm2
EPC20457 mOhm
3.96 mm2
Gen 5: ½ size and 2X performance
www.epc-co.comEPC - The leader in GaN Technology 5
DistributionTransformers
UninterruptablePowerSupplies
(UPS)
AC/DCConversion
DC/DCConversion
DC/DCConversion
DC/DCConversion
DigitalChip13.8kVAC
208VAC 208VAC 400VDC 48VDC 12VDC 1VDC
98%
93%
97% 98% 98% 95% 85%98%
150W100W
12 V 1 VNonIsolatedPointofLoadBuckConverter
150 W 100 W
79% Efficient
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7980818283848586878889909192
2 6 10 14 18 22 26 30 34 38 42 46 50
Effic
ienc
y (%
)
Output Current (A)
GaN Circa 2010
VIN=12 V, VOUT=1.2 V, fsw=1 MHz
VIN=12 V, VOUT=1.2 V, fsw=1 MHz
First Generation eGaN® FET
eGaN® is a registered trademark of Efficient Power Conversion Corporation
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7980818283848586878889909192
2 6 10 14 18 22 26 30 34 38 42 46 50
Effic
ienc
y (%
)
Output Current (A)
GaN Circa 2010
GaN Circa 2012
VIN=12 V, VOUT=1.2 V, fsw=1 MHz
Improved Layout
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7980818283848586878889909192
2 6 10 14 18 22 26 30 34 38 42 46 50
Effic
ienc
y (%
)
Output Current (A)
GaN Circa 2014
GaN Circa 2010
GaN Circa 2012
VIN=12 V, VOUT=1.2 V, fsw=1 MHz
Fourth Generation eGaN FET
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7980818283848586878889909192
2 6 10 14 18 22 26 30 34 38 42 46 50
Effic
ienc
y (%
)
Output Current (A)
GaN Circa 2014
GaN Circa 2010
GaN Circa 2012
GaN Circa 2015
VIN=12 V, VOUT=1.2 V, fsw=1 MHz
Monolithic Half Bridge
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Silicon IBC and GaN POL
80
82
84
86
88
0 50 100 150 200 250 300 350 400 450 500 550 600
Effic
ienc
y (%
)
Output Power (W)
Traditional Two Stage Isolated IBA
Si/GaN
83%
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DistributionTransformers
UninterruptablePowerSupplies
(UPS)
AC/DCConversion
DC/DCConversion
DC/DCConversion
DC/DCConversion
DigitalChip13.8kVAC
208VAC 208VAC 400VDC 48VDC 12VDC 1VDC
98%
93%
97% 98% 98% 95% 85%98%
150W100W
96% 90%
100 W
1 V48 V 12 V
85% Efficient140 W
eGaN FETs and ICs
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80
82
84
86
88
0 50 100 150 200 250 300 350 400 450 500 550 600
Effic
ienc
y (%
)
Output Power (W)
Traditional Two Stage Isolated IBA
Si/GaN
GaN/GaN
eGaN FETs and ICs
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Eliminate 12 V Bus
DistributionTransformers
UninterruptablePowerSupplies
(UPS)
AC/DCConversion
DC/DCConversion
DC/DCConversion
DC/DCConversion
DigitalChip13.8kVAC
208VAC 208VAC 400VDC 48VDC 12VDC 1VDC
98%
93%
97% 98% 98% 95% 85%98%
150W100W
48 V 1 VNonIsolatedPointofLoadBuckConverter
One Stage Conversion
96% 90%
140 W 100 W
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48 V 1 VNonIsolatedPointofLoadBuckConverter
One Stage Conversion
Eliminate 12 V Bus
DistributionTransformers
UninterruptablePowerSupplies
(UPS)
AC/DCConversion
DC/DCConversion
DC/DCConversion
DC/DCConversion
DigitalChip13.8kVAC
208VAC 208VAC 400VDC 48VDC 12VDC 1VDC
98%
93%
97% 98% 98% 95% 85%98%
150W100W
Monolithic Half Bridge
96% 90%
140 W 100 W
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80
82
84
86
88
0 50 100 150 200 250 300 350 400 450 500 550 600
Effic
ienc
y (%
)
Output Power (W)
Traditional Two Stage Isolated IBA
Single Stage Buck Converter with Monolithic Half Bridge
Si/GaN
GaN/GaN
Performance Gap
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80
82
84
86
88
0 50 100 150 200 250 300 350 400 450 500 550 600
Effic
ienc
y (%
)
Output Power (W)
Single Stage Buck Converter with Monolithic Half Bridge
Traditional Two Stage Isolated IBA
Si/GaN
GaN/GaN
Improved FETs
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ü MonolithicHalfBridgeü HalfBridgeplusBootstrap• IntegratedFETandlowsidedriver• Integratedhalfbridgewithlevelshift
anddrivers• MonolithicBuckIC
GaN Integrated Circuit Roadmap
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ü MonolithicHalfBridgeü HalfBridgeplusBootstrap• IntegratedFETandlowsidedriver• Integratedhalfbridgewithlevelshift
anddrivers• MonolithicBuckIC
GaN Integrated Circuit Roadmap
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First Step - Integrated FET and Low Side Driver
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Monolithic Gate Driver and FET
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ü MonolithicHalfBridgeü HalfBridgeplusBootstrap• IntegratedFETandlowsidedriver• Integratedhalfbridgewithlevelshift
anddrivers• MonolithicBuckIC
GaN Integrated Circuit Roadmap
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80
82
84
86
88
0 50 100 150 200 250 300 350 400 450 500 550 600
Effic
ienc
y (%
)
Output Power (W)
Single Stage Buck Converter
Traditional Two Stage Isolated IBA
Si
GaN
Improved FETs
Monolithic IC
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DistributionTransformers
UninterruptablePowerSupplies
(UPS)
AC/DCConversion
DC/DCConversion
DC/DCConversion
DC/DCConversion
DigitalChip13.8kVAC
208VAC 208VAC 400VDC 48VDC 12VDC 1VDC
98%
93%
97% 98% 98% 95% 85%98%
150W100W
79% Efficient 100 W150 W
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1 V48 V
DistributionTransformers
UninterruptablePowerSupplies
(UPS)
AC/DCConversion
DC/DCConversion
DC/DCConversion
DC/DCConversion
DigitalChip13.8kVAC
208VAC 208VAC 400VDC 48VDC 12VDC 1VDC
98%
93%
97% 98% 98% 95% 85%98%
150W100W
12 V
96% 90%
85% Efficient 100 W140 W
www.epc-co.comEPC - The leader in GaN Technology 25
DistributionTransformers
UninterruptablePowerSupplies
(UPS)
AC/DCConversion
DC/DCConversion
DC/DCConversion
DC/DCConversion
DigitalChip13.8kVAC
208VAC 208VAC 400VDC 48VDC 12VDC 1VDC
98%
93%
97% 98% 98% 95% 85%98%
150W100W
96% 90%
88% Efficient
100 W140 W134 W
eGaN Integrated Circuit
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eGaN Integration Roadmap
LiDAR IC
Monolithic Half-Bridge
ICDiscrete
Envelope Tracking IC
Wireless Charging
IC Power SoC
2010 2014 2015 2016 2017…
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• GaN integrationcreatesalotofperformanceleverage.
• Thefirststepsinintegrationinvolvereducingparasiticinductanceandintegrationofdrivecircuitry.
• Thesecondstageinvolvesincludinglevelshiftandcurrentsense.
• Thethirdstagewillincludecontrolcircuitryinbothanaloganddigital.
Summary
