GaN and Related Alloys—2003 - Cambridge University...

GaN and Related Alloys—2003

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Cambridge University Press978-1-107-40928-6 - Materials Research Society Symposium Proceedings: Volume 798:GaN and Related Alloys—2003Editors: Hock Min Ng, Michael Wraback, Kazumasa Hiramatsu and Nicolas GrandjeanFrontmatterMore information

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MATERIALS RESEARCH SOCIETYSYMPOSIUM PROCEEDINGS VOLUME 798

GaN and Related Alloys—2003

Symposium held December 1-5,2003, Boston, Massachusetts, U.S.A.

EDITORS:

Hock Min NgBell Laboratories, Lucent Technologies

Murray Hill, New Jersey, U.S.A.

Michael WrabackU.S. Army Research Laboratory

Adelphi, Maryland, U.S.A.

Kazumasa HiramatsuMie University

Mie, Japan

Nicolas GrandjeanSwiss Federal Institute of Technology-Lausanne (EPFL)

Lausanne, Switzerland

Materials Research SocietyWarrendale, Pennsylvania






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This work was supported in part by the Army Research Office under Grant Number DAAD19-03-1 -0317. The views, opinions, and/or findings contained in this report are those of the author(s) and shouldnot be construed as an official Department of the Army position, policy, or decision, unless sodesignated by other documentation.

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CONTENTS

Preface xxi

Materials Research Society Symposium Proceedings xxii

OPTICAL DEVICES

High Current Injection to a UV-LED Grown on a BulkA1N Substrate 3

Toshio Nishida, Tomoyuki Ban, Hisao Saito, andToshiki Makimoto

GaN Quantum Dot UV Light Emitting Diode 11Jeong-Sik Lee, Satoru Tanaka, Peter Ramvall, andHiroaki Okagawa

High Power 330 nm AlInGaN UV LEDs in the HighInjection Regime 17

M. Gherasimova, J. Su, G. Cui, J. Han, H. Peng,E. Makarona, Y. He, Y.-K. Song, and A.V. Nurmikko

Optical Properties of AlN/AlGa(In)N Short PeriodSuperlattices—Deep UV Light Emitting Diodes 23

M. Holtz, I. Ahmad, V.V. Kuryatkov, B.A. Borisov,G.D. Kipshidze, A. Chandolu, S.A. Nikishin, andH. Temkin

Electrical and Optical Characteristics of Delta DopedAlGaN Cladding Layer Materials for Highly Efficient340 nm Ultra Violet LEDs 29

H.P. Xin, J.S. Flynn, J.A. Dion, E.L. Hutchins,H. Antunes, L. Fieschi-Corso, R. Van Egas, andG.R. Brandes

Emission Mechanisms in UV Emitting GaN/AIN MultipleQuantum Well Structures 35

Madalina Furis, Alexander N. Cartwright, Hong Wu, andWilliam J.Schaff

ZnO/AlGaN Ultraviolet Light Emitting Diodes 41D.M. Bagnall, Ya.I. Alivov, E.V. Kalinina, D.C. Look,B.M. Ataev, M.V. Chukichev, A.E. Cherenkov, andA.K. Omaev






High Performance Solar Blind Detectors Based on AlGaNGrown by MBE and MOCVD 47

Jean-Yves Duboz, Jean-Luc Reverchon, Mauro Mosca,Nicolas Grandjean, and Franck Omnes

Characterization of Ill-Nitride Based Schottky UVDetectors With Wide Detectable Wavelength Range(360-10 nm) Using Synchrotron Radiation 53

Atsushi Motogaito, Kazumasa Hiramatsu, Yasuhiro Shibata,Hironobu Watanabe, Hideto Miyake, Kazutoshi Fukui,Youichiro Ohuchi, Kazuyuki Tadatomo, andYutaka Hamamura

ELECTRONIC DEVICES

MOCVD AlGaN/GaN HFETs on Si: Challenges and Issues 61Pradeep Rajagopal, John C. Roberts, J.W. Cook Jr.,J.D. Brown, Edwin L. Piner, and Kevin J. Linthicum

High Temperature Operation of a New Normally-OffAlGaN/GaN HFET on Si Substrate 67

Seikoh Yoshida, Jiang Li, Takahiro Wada, andHironari Takehara

High-Power Characteristics of GaN/InGaN DoubleHeterojunction Bipolar Transistors With a Regrownp-InGaN Base Layer 73

Toshiki Makimoto, Yoshiharu Yamauchi, andKazuhide Kumakura

Design of Composite Channels for Optimized Transport inNitride Devices 79

Madhusudan Singh, Jasprit Singh, and Umesh K. Mishra

Design and Fabrication of GaN-Based Permeable-BaseTransistors 85

Jasper S. Cabalu, Liberty L. Gunter, Ian Friel,Anirban Bhattacharyya, Yuri Fedyunin, Kanin Chu,Enrico Bellotti, Charles Eddy Jr., and Theodore D. Moustakas

Wafer-Fused n-AlGaAs/p-GaAs/n-GaN HeterojunctionBipolar Transistor With uid-GaAs Base-Collector Setback 91

Sarah Estrada, James Champlain, Chad Wang,Andreas Stonas, Larry Coldren, Steven DenBaars,Umesh Mishra, and Evelyn Hu

VI






MOCVD AlGaN/GaN HFET's Material Optimizationand Devices Characterization 95

Alexander Demchuk, Don Olson, Dan Olson,Minseub Shin, and Gordon Munns

Delta-Doped AlGaN/GaN Heterostructure Field-EffectTransistors With Incorporation of A1N Epilayers 101

Z.Y. Fan, M.L. Nakarmi, J.Y. Lin, and H.X. Jiang

LP-MOCVD Growth of GaAlN/GaN Heterostructures onSilicon Carbide: Application to HEMT's Devices 107

M-A. di Forte Poisson, M. Magis, M. Tordjman,R. Aubry, M. Peschang, S.L. Delage, J. di Persio,B. Grimbert, V. Hoel, E. Delos, D. Ducatteau, andC. Gaquiere

Experimental Analysis and a New Theoretical Modelfor Anomalously High Ideality Factors (n » 2.0) inGaN-Based p-n Junction Diodes 113

Jay M. Shah, Yunli Li, Thomas Gessmann, andE. Fred Schubert

Fabrication of Thermoelectric Devices Using AlInN andInON Films Prepared by Reactive Radio-FrequencySputtering 119

S. Yamaguchi, R. Izaki, N. Kaiwa, S. Sugimura, andA. Yamamoto

NANOSTRUCTURES

* Structural and Optical Properties of GaN Quantum Dots 127B. Daudin, N. Gogneau, C. Adelmann, E. Sarigiannidou,T. Andreev, F. Enjalbert, E. Monroy, F. Fossard,J.L. Rouviere, Y. Hori, X. Biquard, D. Jalabert,Le Si Dang, M. Tanaka, and O. Oda

Effects of Growth Interruption on the Structural andOptical Properties of GaN Self-Assembled Quantum Dots 139

K. Hoshino, S. Kako, and Y. Arakawa

Electron Field Emission from GaN Nanotip Pyramids 145Hock M. Ng, Jonathan Shaw, Aref Chowdhury, andNils G. Weimann

*Invited Paper

vn






Influence of A1N Overgrowth on GaN NanostructuresGrown by Molecular Beam Epitaxy 151

N. Gogneau, E. Monroy, D. Jalabert, E. Sarigiannidou,J.L. Rouviere, and B. Daudin

Intersubband Absorptions in Doped and UndopedGaN/AIN Quantum Wells at TelecommunicationWavelengths Grown on Sapphire and 6H-SiC Substrates 157

A. Helman, M. Tchernycheva, A. Lusson, E. Warde,F.H. Mien, E. Monroy, F. Fossard, Le Si Dang, andB. Daudin

Ill-Nitride Photonic Crystals for Blue and UV Emitters 163J. Shakya, K.H. Kim, J. Li, J.Y. Lin, H.X. Jiang, andT.N. Oder

Optimization of GaN/AlGaN Quantum Wells forUltraviolet Emitters 169

A. Hangleiter, D. Fuhrmann, M. Greve, and U. Rossow

InN Nanostructures: Strain and Morphology 175Francois Demangeot, Jean Frandon, Claire Pinquier,Michel Caumont, Olivier Briot, Benedicte Maleyre,Sandra Clur-Ruffenach, and Bernard Gil

Spectroscopy of Intraband Electron Confinement in Self-Assembled GaN/AIN Quantum Dots 181

Ana Helman, Khalid Moumanis, Maria Tchernycheva,Alain Lusson, Francois Julien, Benjamin Damilano,Nicolas Grandjean, Jean Massies, Christophe Adelmann,Frederic Fossard, Daniel Le Si Dang, and Bruno Daudin

INDIUMNITRIDE

* Bandgap Energy and Physical Properties of InN Grownby RF-Molecular Beam Epitaxy 189

Yasushi Nanishi, Yoshiki Saito, Tomohiro Yamaguchi,Fumie Matsuda, Tsutomu Araki, Hiroyuki Naoi,Akira Suzuki, Hiroshi Harima, and Takao Miyajima

*Invited Paper

Vlll






Pressure Dependence of Optical Transitions in In-RichGroup Ill-Nitride Alloys 201

S.X. Li, J. Wu, W. Walukiewicz, W. Shan, E.E. Haller,Hai Lu, and William J. Schaff

Temperature Dependence of the Optical Properties forInN Films Grown by RF-MBE 207

Y. Ishitani, K. Xu, W. Terashima, H. Masuyama,M. Yoshitani, N. Hashimoto, S.B. Che, andA. Yoshikawa

Growth of Non-Polar a-Plane and Cubic InN on r-PlaneSapphire by Molecular Beam Epitaxy 213

Hai Lu, William J. Schaff, Lester F. Eastman,Volker Cimalla, Joerg Pezoldt, Oliver Ambacher,J. Wu, and Wladek Walukiewicz

Optical and Electrical Properties of Low to Highly-Degenerate InN Films 219

D.B. Haddad, H. Dai, R. Naik, C. Morgan, V.M. Naik,J.S. Thakur, G.W. Auner, L.E. Wenger, H. Lu, andW.J. Schaff

Study of the Growth Mechanism and Properties of InNFilms Grown by MOCVD 225

Abhishek Jain and Joan M. Redwing

Optical and Microstructural Characterization of InNGrown by PAMBE on (0001) Sapphire and (001) YSZ 231

P.A. Anderson, C.E. Kendrick, T.E. Lee, W. Diehl,R.J. Reeves, V.J. Kennedy, A. Markwitz, RJ. Kinsey,and S.M. Durbin

Characterization of Photovoltaic Cells Using n-InN/p-SiGrown by RF-MBE 237

Chiharu Morioka, Tomohiro Yamaguchi, Hiroyuki Naoi,Tsutomu Araki, Akira Suzuki, and Yasushi Nanishi

Structural Characterization of Low-Temperature InNBuffer Layer Grown by RF-MBE 243

T. Araki and Y. Nanishi

Real-Time Optical Monitoring of Gas Phase Dynamicsfor the Growth of InN at Elevated Pressures 249

N. Dietz, H. Born, M. Strassburg, and V. Woods

IX






BULK/QUASI SUBSTRATES

Growth and Fabrication of 2 Inch Free-Standing GaNSubstrates via the Boule Growth Method 257

Drew Hanser, Lianghong Liu, Edward A. Preble,Darin Thomas, and Mark Williams

Growth of GaN Crystals Under AmmonothermalConditions 263

Michael J. Callahan, Buguo Wang, Lionel O. Bouthillette,Sheng-Qi Wang, Joseph W. Kolis, and David F. Bliss

Curvature and Strain in Thick HVPE-GaN for Quasi-Substrate Applications 269

Claudia Roder, Tim Bottcher, Tanya Paskova,Bo Monemar, and Detlef Hommel

Growth and Characterization of Bulk GaN Crystals atHigh Pressure and High Temperature 275

M.P. D'Evelyn, K.J. Narang, D.-S. Park, H.C. Hong,M. Barber, S.A. Tysoe, J. Leman, J. Balch, V.L. Lou,S.F. LeBoeuf, Y. Gao, J.A. Teetsov, PJ. Codella,P.R. Tavernier, D.R. Clarke, and R.J. Molnar

Vapor Phase Transport of A1N in an RF Heated Reactor:Low and High Temperature Studies 281

V. Noveski, R. Schlesser, J. Freitas Jr., S. Mahajan,S. Beaudoin, and Z. Sitar

Crucible Selection in A1N Bulk Crystal Growth 287Rafael Dalmau, Balaji Raghothamachar,Michael Dudley, Raoul Schlesser, and Zlatko Sitar

Properties of Crucible Materials for Bulk Growth of A1N 293Glen A. Slack, Jon Whitlock, Ken Morgan, andLeo J. Schowalter

Effect of Impurities on Raman and PhotoluminescenceSpectra of A1N Bulk Crystals 297

A. Sarua, S. Rajasingam, M. Kuball, N. Garro,O. Sancho, A. Cros, A. Cantarero, D. Olguin, B. Liu,D. Zhuang, and J.H. Edgar






HETEROEPITAXY

HNO3 Treatment of Sapphire for Management of GaNPolarity in MOCVD Method: Comparison of theProperties of+c and -c GaN region 305

Motoki Takabe, Masatomo Sumiya, and Shunro Fuke

Either Step-Flow or Layer-by-Layer Growth for A1N onSiC (0001) Substrates 311

Jun Suda, Norio Onojima, Tsunenobu Kimoto, andHiroyuki Matsunami

Growth and Surface Reconstructions of AlN(OOOl) Films 317CD. Lee, Y. Dong, R.M. Feenstra, J.E. Northrup, andJ. Neugebauer

Growth Evolution of Gallium Nitride Films on Steppedand Step-Free SiC Surfaces 323

Charles R. Eddy Jr., James C. Culbertson, Nabil D. Bassim,Mark E. Twigg, Ronald T. Holm, Robert E. Stahlbush,Richard L. Henry, Philip G. Neudeck, Andrew J. Trunek,and J. Anthony Powell

N-rich GaNAs With High As Content Grown byMetalorganic Vapor Phase Epitaxy 329

Akitaka Kimura, H.F. Tang, C.A. Paulson, andT.F. Kuech

Reduction of Threading Dislocation Density in AlGaNby Indium Incorporation 335

H. Kang, Z.C. Feng, I. Ferguson, S.P. Guo, andM. Pophristic

High Electron Mobility in AlGaN/GaN HEMT Grown onSapphire: Strain Modification by Means of A1NInterlayers 341

Marianne Germain, Maarten Leys, Steven Boeykens,Stefan Degroote, Wenfei Wang, Dominique Schreurs,Wouter Ruythooren, Kang-Hoon Choi, Benny Van Daele,Gustaaf Van Tendeloo, and Gustaaf Borghs

Proposal to Use GaAs(114) Substrates for Improvement ofthe Optical Transition Probability in NitrideSemiconductor Quantum Wells 347

Mitsuru Funato, Yoshinobu Kawaguchi, and Shigeo Fujita

XI






Reduction of Dark Current in AlGaN/GaN SchottkyBarrier Photodetectors With a Low-Temperature-GrownGaN Cap Layer „ 353

G.C. Chi, J.K. Sheu, MX. Lee, CJ. Kao, Y.K. Su,S.J. Chang, and W.C. Lai

Effect of Buffer Design on AlGaN/AlN/GaNHeterostrucutres by MBE 359

Gon Namkoong, W. Alan Doolittle, A.S. Brown,M. Losurdo, M.M. Giangregorio, and G. Bruno

GaN Layers Re-Grown on Etched GaN Templates byPlasma Assisted Molecular Beam Epitaxy 365

L. He, X. Gu, J. Xie, F. Yun, A.A. Baski, and H. Morko9

Surface Control of ZrB2 (0001) Substrate for Molecular-Beam Epitaxy of GaN 369

Jun Suda, Hiroyasu Yamashita, Robert Armitage,Tsunenobu Kimoto, and Hiroyuki Matsunami

Growth and Characterization of Epitaxial GaN Thin Filmson 4H-SiC (11.0) Substrates 375

Brian P. Wagner, E.A. Preble, Z.J. Reitmeier,R.F. Davis, D.N. Zakharov, and Z. Liliental-Weber

Thermal Conductivity of GaN Grown on Silicon Substrates 381C. Mion, Y.C. Chang, J.F. Muth, P. Rajagopal, andJ.D. Brown

Growth of Crack-Free GaN on A1N Quantum Dots onSi(l l l ) Substrates by MOCVD 387

W.H. Sun, J.L. Chen, L.S. Wang, and SJ. Chua

Growth and Characterization of A IN and GaN Thin FilmsDeposited on Si( l l l ) Substrates Containing a Very ThinAl Layer 391

Zachary J. Reitmeier and Robert F. Davis

GaN Epitaxial Growth Process at High GrowthTemperature by NH3 Source Molecular Beam Epitaxy 397

Naoki Ohshima, Akihiro Sugihara, Naoya Yoshida, andNaohiko Okabe

xn






MBE Grown A1N Films on SiC for Piezoelectric MEMSSensors 403

Dharanipal Doppalapudi, Richard Mlcak, Jeffrey Chan,Harry Tuller, Anirban Bhattacharya, and Theodore Moustakas

Combined MOCVD and MBE Growth of GaN on Porous SiC 409Ashutosh Sagar, R.M. Feenstra, C.K. Inoki, T.S. Kuan,and D.D. Koleske

Epitaxy of Highly Optical Efficient GaN on O and Zn Face ZnO 415Xing Gu, Michael A. Reshchikov, Lei He, Ali Teke,Feng Yun, Daniel K. Johnstone, Bill Nemeth, Jeff Nause,and Hadis Morko9

RARE EARTH DOPING

Luminescence Properties of Eu Ion-Implanted GaN 423Shin-ichiro Uekusa and Isao Tanaka

Electron Micro-Probe Analysis and CathodoluminescenceSpectroscopy of Rare Earth-Implanted GaN 429

S. Dalmasso, R.W. Martin, P.R. Edwards, V. Katchkanov,K.P. O'Donnell, K. Lorenz, E. Alves, U. Wahl,B. Pipeleers, V. Matias, A. Vantomme, Y. Nakanishi,A. Wakahara, and A. Yoshida

Extended X-ray Absorption Fine Structure Studies of GaNEpilayers Doped In Situ With Er and Eu DuringMolecular Beam Epitaxy 435

V. Katchkanov, J.F.W. Mosselmans, S. Dalmasso,K.P. O'Donnell, R.W. Martin, O. Briot, N. Rousseau,and G. Halambalakis

Structure and Photoluminescence Investigations of ErDoped GaN Layers Grown by MBE 441

T. Wojtowicz, H.M. Ng, and P. Ruterana

High Temperature Implantation of Tm in GaN 447K. Lorenz, U. Wahl, E. Alves, S. Dalmasso,R.W. Martin, and K.P. O'Donnell

Processing of Rare Earth Doped GaN With Ion Beams 453K. Lorenz, U. Wahl, E. Alves, T. Wojtowicz, P. Ruterana,S. Dalmasso, R.W. Martin, K.P. O'Donnell, S. Ruffenach,O. Briot, and A. Vantomme

xni






Above and Below Bandgap Excitation of Er-DefectComplexes and Isolated Er in Er-Implanted GaN 459

A. Braud, M. Abouzaid, M. Wojdak, J.L. Doualan,R. Moncorge, B. Pipeleers, and A. Vantomme

Luminescent Holmium Doped Amorphous A1N Thin Filmsfor Use as Waveguides and Laser Cavities 465

Muhammad Maqbool, H.H. Richardson, P.G. Van Patten,and M.E. Kordesch

Structure and Electrical Activity of Rare-Earth Dopants inSelected III-Vs 471

J.-S. Filho, S. Petit, R. Jones, B. Hourahine, Th. Frauenheim,H. Overhof, J. Coutinho, MJ. Shaw, P.R. Briddon, andS. Oberg

DOPING/THEORY

Mg Doped GaN Using a Valved, Thermally EnergeticSource: Enhanced Incorporation, Control andQuantitative Optimization 479

Shawn D. Burnham, W. Alan Doolittle, Gon Namkoong,and Walter Henderson

Hydrogen-Related Local Vibrational Modes in GaN:MgGrown by Molecular Beam Epitaxy 485

D. Pastor, R. Cusco, L. Artus, F. Naranjo, and E. Calleja

Non-Equilibrium Acceptor Concentration in GaN:MgGrown by Metalorganic Chemical Vapor Deposition 491

Y. Gong, Y. Gu, Igor L. Kuskovsky, G.F. Neumark,J. Li, J.Y. Lin, H.X. Jiang, and I. Ferguson

Formation and Dissociation of Hydrogen-Related DefectCenters in Mg-Doped GaN 497

O. Gelhausen, M.R. Phillips, E.M. Goldys, T. Paskova,B. Monemar, M. Strassburg, and A. Hoffmann

Thermal Activation of Beryllium in GaN Grown byRF-Plasma Molecular Beam Epitaxy 503

B.L. VanMil, Kyoungnae Lee, Lijun Wang, N.C. Giles,and T.H. Myers

xiv






Identification of Carbon-Related Bandgap States in GaNGrown by MOCVD 509

A. Armstrong, A.R. Arehart, S.A. Ringel, B. Moran,S.P. DenBaars, U.K. Mishra, and J.S. Speck

Electrical and Optical Properties of Carbon Doped CubicGaN Epilayers Grown Under Extreme Ga Excess , 515

DJ. As, D.G. Pacheco-Salazar, S. Potthast, andK. Lischka

Thermally Stimulated Current Spectroscopy of Carbon-Doped GaN Grown by Molecular Beam Epitaxy 521

Z-Q. Fang, D.C. Look, R. Armitage, Q. Yang, andE.R. Weber

Arsenic Incorporation Behavior in Nitrogen-Rich GaNAsAlloys Synthesized by Metalorganic Chemical VaporDeposition (MOCVD) 527

M. Gherasimova, R.G. Wheeler, LJ. Guido, K.L. Chang,and K.C. Hsieh

The Influence of Substrate Polarity on the Blue EmissionFrom As-Doped GaN Layers Grown by Molecular BeamEpitaxy 533

S.V. Novikov, L.X. Zhao, C.T. Foxon, I. Harrison,R.P. Campion, C.R. Staddon, S.W. Kang, O. Kryliouk,and T. Anderson

Modulation of Arsenic Incorporation in GaN LayersGrown by Molecular Beam Epitaxy 539

S.V. Novikov, L.X. Zhao, C.T. Foxon, B.Ja. Ber,A.P. Kovarsky, I. Harrison, M.W. Fay, and P.D. Brown

Investigation of Molecular Co-Doping for Low IonizationEnergy P-Type Centers in (Ga,Al)N 545

Zhe Chuan Feng, Adam M. Payne, David Nicol,Paul D. Helm, and Ian Ferguson

Synthesis and Characterization of High Quality FerromagneticCr-Doped GaN and A1N Thin Films With Curie TemperaturesAbove 900K 551

Stephen Y. Wu, H.X. Liu, Lin Gu, R.K. Singh,M. van Schilfgaarde, David J. Smith, N.R. Dilley,L. Montes, M.B. Simmonds, and N. Newman

xv






Novel Method for the Activation of Acceptor Dopant inA1N Introducing Localized Band by Isoelectronic Dopant 557

Toshiyuki Takizawa

Magnetic Properties of Mn-Doped GaN, InGaN, and AlGaN 563M.L. Reed, E.A. Berkman, M.J. Reed, F.E. Arkun,T. Chikyow, S.M. Bedair, J.M. Zavada, and N.A. El-Masry

Optical Properties of Mn-Doped GaN 569O. Gelhausen, E. Malguth, M.R. Phillips, E.M. Goldys,M. Strassburg, A. Hoffmann, T. Graf, M. Gjukic, andM. Stutzmann

Deep Defects in Fe-Doped GaN Layers Analysed byElectrical and Photoelectrical Spectroscopic Methods 575

H. Witte, K. Fluegge, A. Dadgar, A. Krtschil, A. Krost,and J. Christen

PROCESSING

Gate Leakage Suppression and Contact Engineering inNitride Heterostructures 583

Yuh-Renn Wu, Madhusudan Singh, and Jasprit Singh

Laser Diode Facet Degradation Study 589Ulrich T. Schwarz, Thomas Schoedl, V. Kummler,A. Lell, and V. Harle

Influence of Metal Thickness to Sensitivity of Pt/GaNSchottky Diodes for Gas Sensing Applications 593

V. Tilak, M. AH, V. Cimalla, V. Manivannan,P. Sandvik, J. Fedison, O. Ambacher, and D. Merfeld

OPTICAL CHARACTERIZATION

Polarization-Dependent Spectroscopy of the Near-Bandgap Excitonic Emission in Free Standing GaN 601

P.P. Paskov, T. Paskova, P.O. Holtz, and B. Monemar

Time-Resolved Reflectivity Studies of Electric Field Effectsin Ill-Nitride Semiconductors 607

M. Wraback, H. Shen, A.V. Sampath, C.J. Collins,G.A. Garrett, W.L. Sarney, Y. Fedyunin, J. Cabalu,and T.D. Moustakas

xvi






Advances in the Realisation of GaN-Based Microcavities:Towards Strong Coupling at Room Temperature 613

F. Semond, D. Byrne, F. Natali, M. Leroux, J. Massies,N. Antoine-Vincent, A. Vasson, P. Disseix, and J. Leymarie

Origins of Light Emission and Efficiency Saturation of thePhotoluminescence of GaN Nanocrystallites 619

Xiang-Bai Chen, John L. Morrison, Margaret K. Penner,Jennifer Elle, and Leah Bergman

Optical and Microstructural Properties of N- andGa-Polarity GaN 625

A. Bell, J.L. Smit, R. Liu, J. Mei, F.A. Ponce,H.M. Ng, A. Chowdhury, and N.G. Weimann

Photoluminescence From Freestanding GaN With( 1010) Orientation 631

M.A. Reshchikov, A. Teke, H.P. Maruska, D.W. Hill,and H. Morko$

Structural Defect-Related Photoluminescence in GaN 637L. Chen, B.J. Skromme, M.K. Mikhov, H. Yamane,M. Aoki, F.J. DiSalvo, B. Wagner, R.F. Davis,P.A. Grudowski, and R.D. Dupuis

Optical Evaluation of Pretreated InGaN Quantum WellStructures 643

T. Bottcher, F. Bertram, P. Bergman, A. Ueta,J. Christen, and D. Hommel

Recombination Related to Two-Dimensional Electron Gasof AlxGa!_xN/GaN Single Heterostructures Studied WithPicosecond Time-Resolved Photoluminescence 649

Qing Yang, Rob Armitage, Eicke R. Weber,Ronald Birkhahn, David Gotthold, Shiping Guo, andBrian Albert

Synthesis, Structure and Luminescence of High BrightnessGallium Nitride Powder 655

R. Garcia, A. Thomas, A. Bell, M. Stevens, andF.A. Ponce

Anisotropic Dielectric Properties of GaN Epilayers onSapphire 661

N.L. Rowell, G. Yu, and D J. Lockwood

xvn






Time Resolved Photoluminescence of Si-Doped High AlMole Fraction AlGaN Epilayers Grown by Plasma-EnhancedMolecular Beam Epitaxy 667

Madalina Furis, Alexander N. Cartwright,Jeonghyun Hwang, and William J. Schaff

Anomalous Composition Dependence of Optical EnergiesofMBE-GrownlnGaN 673

I. Fernandez-Torrente, D. Amabile, R.W. Martin,K.P. O'Donnell, J.F.W. Mosselmans, E. Calleja,and F.B. Naranjo

Confocal Photoluminescence and CathodoluminescenceStudies of AlGaN 677

V. Dierolf, O. Svitelskiy, G.S. Cargill III,A.Yu. Nikiforov, J. Redwing, and J. Acord

Manifestation of Structural Defects in PhotoluminescenceFromGaN 683

M.A. Reshchikov, J. Jasinski, F. Yun, L. He,Z. Liliental-Weber, and H. Morko9

Raman Characterization of Strained GaNyAsi_y andInxGa^NyAsi.y Epilayers 689

Li-Lin Tay, David J. Lockwood, James A. Gupta,and Zbig R. Wasilewski

Optical Study of Localized and Delocalized States inGaAsN/GaAs 695

Z.Y. Xu, X.D. Luo, X.D. Yang, P.H. Tan, C.L. Yang,W.K. Ge, Y. Zhang, A. Mascarenhas, H.P. Xin, andC.W. Tu

Strong Dependence of the Fundamental Band Gap on the AlloyComposition in Cubic In^Gax.JV and In^Ali.JV Alloys 701

Z. Dridi, B. Bouhafs, and P. Ruterana

STRUCTURAL CHARACTERIZATION

* Atomic Structure of Defects in GaN:Mg Grown with Ga Polarity 711Z. Liliental-Weber, T. Tomaszewicz, D. Zakharov,J. Jasinski, M.A. O'Keefe, S. Hautakangas, A. Laakso,and K. Saarinen

* Invited Paper

xvm






Structural and Optical Characterization of InGaN LayersGrown by MOMBE 723

P. Singh, J. Aderhold, J. Graul, V.Yu. Davydov,F. Gourbilleau, and P. Ruterana

The Structure of Dislocations in GaN Grown by MBE as aFunction of the Gallium to Nitrogen Ratio 729

Marcus Q. Baines, David Chems, Sergei V. Novikov,Michael J. Manfra, and C. Thomas Foxon

Influence of Growth Parameters on the Deep LevelSpectrum in MBE-Grown n-GaN 735

A.R. Arehart, C. Poblenz, B. Heying, J.S. Speck,U.K. Mishra, S.P. DenBaars, and S.A. Ringel

Strain Evolution and Phonons in AIN/GaN Superlattices 741V. Darakchieva, P.P. Paskov, M. Schubert, E. Valcheva,T. Paskova, H. Arwin, B. Monemar, H. Amano, andI. Akasaki

Microstructure of Nonpolar a-Plane GaN Grown on (1120)4H-SiC Investigated by TEM 747

D.N. Zakharov, Z. Liliental-Weber, B. Wagner,ZJ. Reitmeier, E.A. Preble, and R.F. Davis

Structural Study of V-like Columnar Inversion Domains inAIN Grown on Sapphire 753

J. Jasinski, T. Tomaszewicz, Z. Liliental-Weber,Q.S. Paduano, D.W. Weyburne

TEM Investigation of Defect Reduction and Etch PitFormation in GaN 759

Angelika Vennemann, Jens Dennemarck, Roland Kroger,Tim Bottcher, Detlef Hommel and Peter Ryder

Platelet Inversion Domains Induced by Mg-Doping inELOG AlGaN Films 765

R. Liu, F.A. Ponce, D. Cherns, H. Amano, and I. Akasaki

The Microstructure of GaN Nucleation Layers Grown byMOCVD on (1120) Sapphire Versus Pressure andTemperature 771

T. Wojtowicz, P. Ruterana, M.E. Twigg, R.L. Henry,D.D. Koleske, A.E. Wickenden

xix






Effects of Si-Doping on the Microstructure of AlGaN/GaNMultiple-Quantum-Well 775

R. Liu, F.A. Ponce, S-L. Sahonta, D. Cherns, H. Amano,and I. Akasaki

Structural Units and Energy of Grain Boundaries in GaN 781Jun Chen, Pierre Ruterana, and Gerard Nouet

Analysis of InGaN-GaN Quantum Well Chemistry andInterfaces by Transmission Electron Microscopy andX-ray Scattering 787

T.M. Smeeton, M.J. Kappers, J.S. Barnard, andC.J. Humphreys

Band Bending Near the Surface in GaN as Detected by aCharge Sensitive Probe 793

S. Sabuktagin, M.A. Reshchikov, D.K. Johnstone, andH. Morko^

Reciprocal Space Mapping of X-ray Diffraction Intensityof GaN-Based Laser Diodes Grown on GaN Substrates 799

K. Tachibana, Y. Harada, S. Saito, S. Nunoue,H. Katsuno, C. Hongo, G. Hatakoshi, and M. Onomura

Surface Potential Measurements of Doping and Defects inp-GaN , 805

M. Losurdo, M.M. Giangregorio, G. Bruno, A.S. Brown,W.A. Doolittle, Gon Namkoong, AJ. Ptak, and T.H. Myers

Evidence of Strong Indium Segregation in MOCVDInxGai_xN/GaN Quantum Layers 811

Grzegorz Maciejewski, Grzegorz Jurczak,Slawomir Kret, Pawel Dhizewski, and Pierre Ruterana

A Study of Elemental Interdiffusion in GaN/Si WaferGrown by Metalorganic Vapor Phase Epitaxy 817

X. Chen, M. Ishiko, Y. Kuroiwa, and N. Sawaki

Author Index 823

Subject Index 831

xx






PREFACE

Symposium Y, "GaN and Related Alloys—2003," held December 1-5 at the 2003 MRS FallMeeting in Boston, Massachusetts, was a continuation of a series of symposia that has beenactively running for over a decade. The symposium was very well attended and indicated that thefield is vibrant and growing rapidly. There were contributions from 28 different countries spanning5 continents. The session topics included optical devices, bulk substrates, heteroepitaxy,nanostructures, material characterization, electronic devices, doping, theory, processing, andindium nitride. More than half of the 258 presented papers were submitted for inclusion in thisproceedings volume. In addition to oral and poster presentations, the symposium also served as aforum for researchers to meet, exchange ideas, and form new collaborations.

There were many people involved in making this symposium a success. Special thanks areexpressed to the session chairs, manuscript reviewers, symposium assistants, and authors of allinvited and contributed papers. We are also grateful for the excellent support of the MRS staff whoensured that every organizational detail was addressed.

We would like to acknowledge the Air Force Office of Scientific Research (AFOSR), ArmyResearch Office (ARO), Defense Advanced Research Projects Agency (DARPA), and Office ofNaval Research (ONR) for their financial support of this symposium.

Hock Min NgMichael WrabackKazumasa HiramatsuNicolas Grandjean

December 2003

xxi






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 762— Amorphous and Nanocrystalline Silicon-Based Films—2003, J.R. Abelson, G. Ganguly,H. Matsumura, J. Robertson, E. Schiff, 2003, ISBN: 1-55899-699-0

Volume 763— Compound Semiconductor Photovoltaics, R. Noufi, D. Cahen, W. Shafarman, L. Stolt,2003, ISBN: 1-55899-700-8

Volume 764— New Applications for Wide-Bandgap Semiconductors, SJ. Pearton, J. Han, A.G. Baca,J-I. Chyi, W.H. Chang, 2003, ISBN: 1-55899-701-6

Volume 765— CMOS Front-End Materials and Process Technology, T-J. King, B. Yu, R.J.P. Lander,S. Saito, 2003, ISBN: 1-55899-702-4

Volume 766— Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics—2003, A. McKerrow, J. Leu, O. Kraft, T. Kikkawa, 2003, ISBN: 1-55899-703-2

Volume 767— Chemical-Mechanical Planarization, M. Oliver, D. Boning, D. Stein, K. Devriendt, 2003,ISBN: 1-55899-704-0

Volume 768— Integration of Heterogeneous Thin-Film Materials and Devices, H.A. Atwater, M. Levy,M.I. Current, T. Sands, 2003, ISBN: 1-55899-705-9

Volume 769— Flexible Electronics—Materials and Device Technology, B.R. Chalamala, B.E. Gnade,N. Fruehauf, J. Jang, 2003, ISBN: 1-55899-706-7

Volume 770— Optoelectronics of Group-IV-Based Materials, T. Gregorkiewicz, R.G. Elliman,P.M. Fauchet, J.A. Hutchby, 2003, ISBN: 1-55899-707-5

Volume 771— Organic and Polymeric Materials and Devices, P.W.M. Blom, N.C. Greenham,CD. Dimitrakopoulos, CD. Frisbie, 2003, ISBN: 1-55899-708-3

Volume 772— Nanotube-Based Devices, P. Bernier, S. Roth, D. Carroll, G-T. Kim, 2003,ISBN: 1-55899-709-1

Volume 773— Biomicroelectromechanical Systems (BioMEMS), C Ozkan, J. Santini, H. Gao, G. Bao,2003, ISBN: 1-55899-710-5

Volume 774— Materials Inspired by Biology, J.L. Thomas, L. Gower, K.L. Kiick, 2003,ISBN: 1-55899-711-3

Volume 775— Self-Assembled Nanostructured Materials, CJ. Brinker, Y. Lu, M. Antonietti, C Bai,2003, ISBN: 1-55899-712-1

Volume 776— Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics,Information Storage and Sensing, O.D. Velev, T.J. Bunning, Y. Xia, P. Yang, 2003,ISBN: 1-55899-713-X

Volume 777— Nanostructuring Materials with Energetic Beams, S. Roorda, H. Bernas, A. Meldrum,2003, ISBN: 1-55899-714-8

Volume 778— Mechanical Properties Derived from Nanostructuring Materials, H. Kung, D.F. Bahr,N.R. Moody, KJ. Wahl, 2003, ISBN: 1-55899-715-6

Volume 779— Multiscale Phenomena in Materials—Experiments and Modeling Related to MechanicalBehavior, KJ. Hemker, D.H. Lassila, L.E. Levine, H.M. Zbib, 2003,ISBN: 1-55899-716-4

Volume 780— Advanced Optical Processing of Materials, I.W. Boyd, M. Dinescu, A.V. Rode,D.B. Chrisey, 2003, ISBN: 1-55899-717-2

Volume 78IE—Mechanisms in Electrochemical Deposition and Corrosion, J.C Barbour, R.M. Penner,P.C Searson, 2003, ISBN: 1-55899-718-0

Volume 782— Micro- and Nanosystems, D. LaVan, M. McNie, A. Ayon, M. Madou, S. Prasad, 2004,ISBN: 1-55899-720-2

Volume 783— Materials, Integration and Packaging Issues for High-Frequency Devices, P. Muralt, Y.S. Cho,J-P. Maria, M. Klee, C Hoffmann, C.A. Randall, 2004, ISBN: 1-55899-721-0

Volume 784— Ferroelectric Thin Films XII, S. Hoffmann-Eifert, H. Funakubo, A.I. Kingon, I.P. Koutsaroff,V. Joshi, 2004, ISBN: 1-55899-722-9






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 785— Materials and Devices for Smart Systems, Y. Furuya, E. Quandt, Q. Zhang, K. Inoue,M. Shahinpoor, 2004, ISBN: 1-55899-723-7

Volume 786— Fundamentals of Novel Oxide/Semiconductor Interfaces, C.R. Abernathy, E. Gusev,D.G. Schlom, S. Stemmer, 2004, ISBN: 1-55899-724-5

Volume 787— Molecularly Imprinted Materials—2003, P. Kofinas, MJ. Roberts, B. Sellergren, 2004,ISBN: 1-55899-725-3

Volume 788— Continuous Nanophase and Nanostructured Materials, S. Komarneni, J.C. Parker, J. Watkins,2004, ISBN: 1-55899-726-1

Volume 789— Quantum Dots, Nanoparticles and Nanowires, P. Guyot-Sionnest, N.J. Halas, H. Mattoussi,ZX. Wang, U. Woggon, 2004, ISBN: 1-55899-727-X

Volume 790— Dynamics in Small Confining Systems—2003, J.T. Fourkas, P. Levitz, M. Urbakh, K.J. Wahl,2004, ISBN: 1-55899-728-8

Volume 791— Mechanical Properties of Nanostructured Materials and Nanocomposites, R. Krishnamoorti,E. Lavernia, I. Ovid'ko, C.S. Pande, G. Skandan, 2004, ISBN: 1-55899-729-6

Volume 792— Radiation Effects and Ion-Beam Processing of Materials, L. Wang, R. Fromknecht, L.L. Snead,D.F. Downey, H. Takahashi, 2004, ISBN: 1-55899-730-X

Volume 793— Thermoelectric Materials 2003—Research and Applications, G.S. Nolas, J. Yang, T.P. Hogan,D.C. Johnson, 2004, ISBN: 1-55899-731-8

Volume 794— Self-Organized Processes in Semiconductor Heteroepitaxy, R.S. Goldman, R. Noetzel,A.G. Norman, G.B. Stringfellow, 2004, ISBN: 1-55899-732-6

Volume 795— Thin Films—Stresses and Mechanical Properties X, S.G. Corcoran, Y-C. Joo, N.R. Moody,Z. Suo, 2004, ISBN: 1-55899-733-4

Volume 796— Critical Interfacial Issues in Thin-Film Optoelectronic and Energy Conversion Devices,D.S. Ginley, S.A. Carter, M. Gratzel, R.W. Birkmire, 2004, ISBN: 1-55899-734-2

Volume 797— Engineered Porosity for Microphotonics and Plasmonics, R. Wehrspohn, F. Garcial-Vidal,M. Notomi, A. Scherer, 2004, ISBN: 1-55899-735-0

Volume 798— GaN and Related Alloys—2003, H.M. Ng, M. Wraback, K. Hiramatsu, N. Grandjean, 2004,ISBN: 1-55899-736-9

Volume 799— Progress in Compound Semiconductor Materials III—Electronic and OptoelectronicApplications, D. Friedman, M.O. Manasreh, I. Buyanova, F.D. Auret, A. Munkholm, 2004,ISBN: 1-55899-737-7

Volume 800— Synthesis, Characterization and Properties of Energetic/Reactive Nanomaterials,R.W. Armstrong, N.N. Thadhani, W.H. Wilson, JJ. Gilman, Z. Munir, R.L. Simpson, 2004,ISBN: 1-55899-738-5

Volume 801— Hydrogen Storage Materials, M. Nazri, G-A. Nazri, R.C. Young, C. Ping, 2004,ISBN: 1-55899-739-3

Volume 802— Actinides—Basic Science, Applications and Technology, L. Soderholm, J. Joyce, M.F. Nicol,D. Shuh, J.G. Tobin, 2004, ISBN: 1-55899-740-7

Volume 803— Advanced Data Storage Materials and Characterization Techniques, J. Ahner, L. Hesselink,J. Levy, 2004, ISBN: 1-55899-741-5

Volume 804— Combinatorial and Artificial Intelligence Methods in Materials Science II, R.A. Potyrailo,A. Karim, Q. Wang, T. Chikyow, 2004, ISBN: 1-55899-742-3

Volume 805— Quasicrystals 2003—Preparation, Properties and Applications, E. Belin-Ferre, M. Feuerbacher,Y. Ishii, D. Sordelet, 2004, ISBN: 1-55899-743-1

Volume 806— Amorphous and Nanocrystalline Metals, R. Busch, T. Hufhagel, J. Eckert, A. Inoue,W. Johnson, A.R. Yavari, 2004, ISBN: 1-55899-744-X

Volume 807— Scientific Basis for Nuclear Waste Management XXVII, V.M. Oversby, L.O. Werme, 2004,ISBN: 1-55899-752-0

Prior Materials Research Society Symposium Proceedings available by contacting Materials Research Society






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