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02_pee_0315 copy.indd 1 23/04/2015 11:53

CONTENTS

www.power-mag.com Issue 3 2015 Power Electronics Europe

3

Editor Achim ScharfTel: +49 (0)892865 9794Fax: +49 (0)892800 132Email: [email protected]

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ISSN 1748-3530

PAGE 12

Events

PAGE 14

Research

PAGE 18

PCIM Europe 2015

PAGE 22

GaN FET Module Performance Advantage over SiliconGallium Nitride (GaN) FETs are increasingly finding use as next-generation, high-

power devices for power electronics systems. GaN FETs can realize ultra-high

power-density operation with low power loss due to high carrier mobility in the

two-dimensional electron gas (2DEG) channel, and high breakdown voltage due

to large critical electric field. GaN FETs are a majority carrier device, therefore, the

absence of reverse recovery charge creates a value proposition for high-voltage

operation. Narendra Mehta, Senior Systems Engineer GaN products, Texas

Instruments, Dallas, USA

PAGE 28

Gallium Nitride Transistors DriveAutomotive ApplicationsEnhancement-mode gallium nitride transistors have been in production for over

five years. As the technology has matured it has been adopted into a number of

automotive applications such as cockpit wireless charging, LiDAR sensing, and EV

charging with many more to follow. Alex Lidow, CEO Efficient Power

Conversion Corporation, USA

PAGE 36

DC/DC Converter ModulesReplace Discrete DesignsThe decision to ‘make or buy’ a DC-DC converter has never been straightforward

with many factors to consider. More low power applications can now be satisfied

with new generations of low cost modules. Paul Lee, Director of Business

Development, Murata Power Solutions, UK

PAGE 38

ProductsProduct update.

PAGE 41

Website Product Locator

Progress of GaNTransistorsOver the last several years, GaN semiconductors haveemerged as a leading technology enabler for the nextwave of compact, energy-efficient power conversionsystems – ranging from ultra-small adapters, high-power-density PCs, server and telecom powersupplies, to highly efficient PV inverters and motioncontrol systems. Continuous progress has been madesince the JEDEC qualification of Transphorm’s 600 V-rated GaN-on-Si devices in 2013. Systematic voltage-accelerated off-state stress tests and temperature-accelerated on-state stress tests reveal an intrinsicMean Time to Failure (MTTF) of 8x107 and 3x107hours at the rated voltage and rated temperaturerespectively. The TPH3205WS is a first 600V GaN(Gallium Nitride) transistor in a TO-247 package.Offering 63 m? on-resistance and 34 A current rating,the device utilizes the source-tab connection design,which reduces EMI at high dv/dt to enable lowswitching loss and high-speed operation in powersupply and inverter applications. An alreadydemonstrated 2.4kW, bridgeless totem-pole PFCdesign exhibits near 99 % PFC efficiency at 100 kHzoperation. There has been also strong interest indeveloping GaN power devices for automotiveapplications due to the physical arguments of theirpotential benefits for next generation vehicles.However, most previous reports have been consumedwith discussion of device structures, characteristics andchallenges in achieving reliability. In passing JEDECqualification of 600-V rated GaN transistors, reliabilitycan now be assessed to justify GaN’s suitability for thestringent automotive applications. Although it will takemore time to develop mature manufacturing of highcurrent GaN devices for the main motor drive in anElectric Vehicle (EV), it is now attractive to employpresent GaN switch products for auxiliary power blocksup to 6 kW. Full story on page 32.

Cover supplied by Transphorm Inc, Goleta, USA.

COVER STORY

PAGE 6

Market NewsPEE looks at the latest Market News and company

developments

p03 Contents.QXD_p03 Contents 23/04/2015 15:41

Coming from high-power semiconductors, ABB is regarded as one of the world’sleading supplier setting world standards in quality and performance. ABB’s uniqueknowledge in high-power semiconductors now expands to industry standardmedium-power IGBT and bipolar (thyristor/diode) modules. ABB is launching the

• 62Pak: a 1,700 volt, 300 ampere, dual IGBT in a 62 mm package • 20Pak, 34Pak, 50Pak and 60Pak: 1,600 - 6,000 volt, 120 - 830

ampere dual thyristor and dual diode modules in 20 - 60 mm packagesDemanding medium-power applications such as low-voltage drives, softstarters, UPS and renewables benefit from ABB’s well-known experience andquality.For more information please contact us or visit our website:www.abb.com/semiconductors

ABB Switzerland Ltd. / ABB s.r.o.www.abb.com/[email protected].: +41 58 586 1419

Medium power modules. Industry icons go quality.

04_pee_0315.indd 1 23/04/2015 14:07

OPINION 5


The power semiconductor market is growing againand has reached $11.5 billion in 2014, a growthrate of 8.4 percent and will surpass $17 billion by2020. In line events such as PCIM Europe (May 18-21 in Nuremberg) are also growing. Market growthwill be driven by a significant increase in electric andhybrid vehicle sales, as well as the ramp-up ofrenewable energy and more smart-grid technologyimplementation. Power modules, and moreprecisely IGBTs, will lead this growth. Modules areexpected to reach a CAGR 2014-2020 of 10.3percent, compared to 5.1 percent growth fordiscrete components, according to marketresearcher Yole. The new wide band gap devicemarket will also drive growth, SiC and GaN haveproved to be powerful solutions. Ready to beimplemented in numerous applications, WBGsolutions will represent around 5 percent of theoverall market by 2020, even though in terms ofunits their presence will still be limited. Due to thegrowing and important role of WBG semiconductorsefficient packages will become mandatory, so thatdevices’ high frequency, high voltage or hightemperature capabilities can be best exploited. The emerging market for SiC and GaN power

semiconductors is forecast by market researcher IHSto grow by a factor of 17, during the next 10 years,energized by growing demand for power supplies,hybrid and electric vehicles, photovoltaic invertersand other established applications. Worldwiderevenue from sales of SiC and GaN powersemiconductors is projected by IHS to rise to $2.5billion in 2023, up from just $150 million in 2013.The key factor determining market growth will behow quickly SiC and GaN devices can achieve priceparity with - and equivalent performance of - SiliconMOSFETs, IGBTs or rectifiers. Price and performanceparity is forecast to occur in 2020, and the SiC andGaN power market is subsequently expected toexperience tremendous growth through 2023.Just after the $3-billion acquisition of International

Rectifier with a focus on their GaN-on-Silicontechnology and intellectual property Infineonexpands its GaN-on-Silicon technology and productportfolio. The company now offers both Panasonic’senhancement mode and IR’s cascode configurationGaN-based platforms for applications requiring highlevels of energy efficiency including Switch ModePower Supplies (SMPS) used in server, telecom,mobile power and consumer goods such as Class DAudio systems. GaN shall complement the portfolioof MOSFETs and SiC active devices. Infineon will

start by developing a portfolio of discrete switches,but will soon also offer integrated solutions;leveraging the fact that GaN is a viable alternativetechnology. Infineon recognizes that GaN switcheswill enable the next level of system efficiency,energy saving and power density and, therefore,decided to invest a significant amount of its R&Deffort to pursue this challenge. And Transphorm Inc.announced in partnership with ON Semiconductorthe introduction of two co-branded 600 V GaNcascode transistors and a 240 W reference designthat utilizes them. This introduction builds on thepartnership between Transphorm and ONSemiconductor announced in September 2014. TheTransphorm GaN HEMT devices are in massproduction at the Fujitsu Semiconductor group’sCMOS-compatible, 150 mm wafer fab in Aizu-Wakamatsu, Fukushima, Japan. The large-scale,automotive-qualified facility will allow expansion ofGaN power device production according to thegrowing demand. According to EPC, also one of theearly vendors, enhancement-mode gallium nitridetransistors have been commercially available forover five years and have infiltrated manyapplications previously monopolized by the agingSilicon power MOSFET. At ISPSD 2015 CEO AlexLidow will discuss the state-of-the-art and theexpected progress of GaN technology over the nextfew years, showing that Moore’s Law is alive andwell in the world of power semiconductortechnology. He will also enumerate the advantagesof GaN over silicon in terms of performance, cost,and reliability – as he will do at PCIM Europe somedays later. Recently the automobile industry hasbegun to show its vision of the future for the fully-mobile lifestyle. The dashboard is being taken overby the smartphone, the car is being taken over bysensors and computers to become semi, andeventually, fully autonomous. And, our cars aregoing semi, and eventually fully electric. Powerdevices made with Gallium Nitride are an integralpart of every aspect of this mobility trend. Thesenew generation power devices have already carvedout a significant position in the next generationautomobile, Lidow will point out on occasion ofPEE`s Special Session “Power GaN for AutomotiveApplications” at PCIM on May 20. According toTransphorm there has been strong interest indeveloping GaN power devices for automotiveapplications due to the physical arguments of theirpotential benefits for next generation vehicles.Although it will take more time to develop maturemanufacturing of high current GaN devices for themain motor drive in an Electric Vehicle, it is nowattractive to employ present GaN switch products forauxiliary power blocks up to 6 kW. GaN devices builtupon Silicon substrates will meet the needs of theautomotive industry in terms of voltage and currentrating, will GaN Systems underline in this SpecialSession. The suggested ratings for a GaN e-Modepower transistor are a voltage blocking capability600 V and minimum single-die current rating of 100A. To directly compete with Silicon, and allowing nopremium for higher performance (efficiency), theGaN transistor would have to be priced at less than$10/cm2 – and this will be feasible. To complementthis Session, PEE also has organized a paneldiscussion “Quo Vadis Power GaN” scheduled May20, 2:00-3:00 pm, in the PCIM Industry Forumfeaturing panelists from EPC, GaN Systems, Infineon,Transphorm and Texas Instruments.These activities underline our mission to

penetrate new and promising technologiesthroughout our readership in print and online. Hopeto welcome you there.

Achim ScharfPEE Editor

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6 MARKET NEWS

Issue 3 2015 Power Electronics Europe www.power-mag.com

Power Semiconductors - Back to GrowthThe power semiconductor market is growing, after two years ofstagnancy. According to Yole’s market research, the powersemiconductor devices market reached $11.5 billion in 2014, agrowth rate of 8.4 percent and will surpass $17 billion by 2020.The outlook for the years ahead is also optimistic. Market growth will

be driven by a significant increase in electric and hybrid vehicle (EV/HEV)sales, as well as the ramp-up of renewable energy and more smart-gridtechnology implementation. The market will surpass $17 billion by 2020,representing a compound annual growth rate (CAGR) of 6.9 percent forthe period 2014-2020.“Power modules, and more precisely IGBTs, will lead this growth.

Modules are expected to reach a CAGR 2014-2020 of 10.3 percent,compared to 5.1 percent growth for discrete components”, explainsMattin Grao Txapartegi, Technology & Market Analyst. “This growth in thedemand of IGBT modules is due to their improved overall performance interms of efficiency and thermal conductivity management”.“The new wide band gap device market will also drive growth”, expects

Pierric Gueguen, Business Unit Manager for Power Electronics &Compound Semiconductor activities. According to Yole’s report, lot ofindustrial companies has been focusing its development on WBGtechnologies. And today, both solutions, SiC and GaN have proved to bepowerful solutions. Ready to be implemented in numerous applications,WBG solutions will represent around 5 percent of the overall market by2020, even though in terms of units their presence will still be limited.

Due to the growing and important role of WBG semiconductors efficientpackages will become mandatory, so that devices’ high frequency, highvoltage or high temperature capabilities can be best exploited. In order to increase power module yield and reliability, companies are

working on new products for power packaging, especially for thecommon failure locations, die and substrate attach, interconnection andencapsulation. Both new designs and new materials can be used,whether to eliminate levels of connection or to improve interfaces. In dieattach, for instance, soldering is progressively losing market share, whichbenefits silver sintering. Although the basic material is more expensive,taking into account cheaper equipment and manufacturing costs andimproved reliability, this technology is seducing ever more players.Standard wire bonding is evolving as well, with solutions increasingcontact surface, such as ribbon or ball bonding. Encapsulationtechnologies must evolve to handle high operating temperatures:standard silicone gel or epoxy are limited in terms of temperature, and sonew materials such as parylene are being developed. Thus the power packaging market is also growing, pulled by the

interconnection and substrate segments, respectively 14 and 13 percentbetween 2014 and 2020. And global growth for raw material is expectedto reach 12 percent between 2014 and 2020, with a global market of$1.7 billion in 2020.

www.yole.fr

Power semiconductormarket development 2010 – 2020

Source: Yole

The emerging market for Silicon Carbide (SiC)and Gallium Nitride (GaN) powersemiconductors is forecast to grow by a factor of17, during the next 10 years, energized bygrowing demand for power supplies, hybrid andelectric vehicles, photovoltaic (PV) inverters andother established applications. Worldwiderevenue from sales of SiC and GaN powersemiconductors is projected by IHS to rise to$2.5 billion in 2023, up from just $150 million in2013.

“SiC and GaN power semiconductors havebeen trying to establish themselves in keyapplications, for a few years now; however,approximately 15 percent of the eventual marketcould be made up of new applications usingthese device technologies that are still two orthree years away from production. In addition tothe market the hybrid and electric vehiclesthemselves, it is now apparent that the electricvehicle charging infrastructure market - includingbattery charging stations for plug-in hybrid and

battery-electric vehicles - is also a potentiallyinteresting area for SiC and GaN power devices,stated Richard Eden, Senior Analyst - PowerSemiconductors, IHS Technology.

There is no agreed global standard for hybrid-electric vehicle (HEV) charging infrastructure, sothere are various competing standards describingthe various levels or modes for AC and DCcharging. All of the assorted AC levels can beconsidered to be for electromechanical systems,which require few, if any, power semiconductors.

New Applications Set to Propel the SiCand GaN Power Semiconductors Market

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8 MARKET NEWS


The IHS report (“The World Market for SiC & GaNPower Semiconductors - 2014 Edition”),therefore only considers DC or “fast charging,”because these systems are AC/DC powersupplies, converting power from the mains(typically three-phase) into very high currents ofup to 125 - 400 A at voltages up to 480 to 600V DC, delivering a maximum power of 240 kW.Wireless power charges battery-poweredappliances by transmitting power through the airinstead of through power cables. Althoughproximity within a specified range is required, thistechnology is gaining in popularity in mobilephones, game controllers, laptop computers,tablets, electric vehicles, and other commodityproducts.The adoption of SiC and GaN power

semiconductors will be negligible in inductivecharging solutions, which are designed to complywith the Wireless Power Consortium (WPC’s) Qior Power Matters Alliance (PMA) standards,

because Silicon MOSFETs are adequate for thelow frequencies involved. In contrast, the fastswitching capabilities of SiC and GaN powersemiconductors are ideal for magnetic-resonancepower-transfer applications, which perform wellat the higher frequencies of the Alliance forWireless Power (A4WP) standard. As numerousconsumer-electronics applications use fairly lowvoltages, they will be more suitable for GaNdevices. The only area of this application thoughtsuitable for SiC power devices is wirelesslycharging battery-powered electric vehicles, suchas plug-in hybrid vehicles (PHEVs), etc. “Two more applications that could potentially

use SiC power modules are wind turbines andtraction. In both cases the biggest barriers to SiCpower module adoption are their high cost;unproven reliability; and a lack of availability ofhigh current-rated modules, in general, and of fullSiC modules, in particular. Both applicationstypically require 1700 V modules; a voltage at

which few SiC transistors have already beendeveloped. Trials are underway, but commercialproduction is not expected to start until 2016 or2017. For high-voltage SiC technologies, there area host of new medical applications and otherpotential industrial applications. For low-voltageGaN devices, the new applications include manyemerging technologies that will drive significantgrowth in the future, such as wireless envelopetracking, light detection and ranging (LIDAR),Class-B audio amplifiers, or medical devices”,Eden expects. “The key factor determining marketgrowth will be how quickly SiC and GaN devicescan achieve price parity with - and equivalentperformance of - Silicon MOSFETs, IGBTs orrectifiers. Price and performance parity is forecastto occur in 2020, and the SiC and GaN powermarket is subsequently expected to experiencetremendous growth through 2023.”

www.technology.ihs.com

Infineon Technologies AG and PanasonicCorporation will jointly develop Gallium Nitride(GaN) devices based on Panasonic’s normally-offGaN on Silicon transistor structure integrated intoInfineon’s SMD packages. In this context Panasonichas provided Infineon with a license of itsnormally-off GaN transistor structure.Just after the acquisition of International Rectifier

(IR) with a focus on their GaN-on-Silicontechnology and intellectual property (see PEE1/15 page 6, PEE 2/15 page 8) Infineon expandsits GaN-on-Silicon technology and productportfolio. The company now offers bothPanasonic’s enhancement mode and IR’s cascodeconfiguration GaN-based platforms for applicationsrequiring high levels of energy efficiency includingSwitch Mode Power Supplies (SMPS) used inserver, telecom, mobile power and consumergoods such as Class D Audio systems. GaNtechnology significantly reduces the size andweight of power supplies which will open up newopportunities in end-products such as ultra-thinLED TVs. According to an IHS market researchreport, the GaN-on-Silicon market for powersemiconductors is expected to grow at acompound annual growth rate (CAGR) of morethan 50 percent, leading to an extension ofvolume from $15 million in 2014 to $800 millionby 2023.“Infineon’s GaN-on-Silicon portfolio combined

with the acquisition of International Rectifier’s GaNplatform together with our partnership withPanasonic clearly positions Infineon as thetechnology leader in this promising GaN market,”stated Andreas Urschitz, President of the PowerManagement & Multimarket Division of InfineonTechnologies AG. Infineon’s expanded offering will include

dedicated driver and controller ICs which enable

the topologies and higher frequencies that fullyleverage the benefits of GaN. The offering isfurther enhanced by a broader patent portfolio,GaN-on-Silicon epitaxy process and 100-600 Vtechnologies resulting from the IR acquisition.Additionally, Infineon and Panasonic will jointlyintroduce devices utilizing Panasonic’s normally-off(enhancement mode) GaN-on-Silicon transistorstructure integrated into Infineon’s SMD packages,

providing dual sourcing of highly efficient 600VGaN power devices.Both device concepts have specific advantages

depending on the target application. The cascodeconfiguration is fully compatible with existingdrivers for low-voltage MOSFETs and offers anintegrated body diode with low forward voltagedrop for reverse operation. The enhancementmode concept is a single-chip solution and hencefacilitates further integration either on the chip orpackage level. For most early GaN applications sofar identified either cascode or enhancementmode GaN devices will suffice. Therefore, earlyapplications will be chosen around the maturity ofthe solution including availability of appropriate on-resistance switches, drivers and controllers. Asenhancement mode-based solutions reachmaturity, ease-of-use and solution costs will verylikely make them the more prominent solution. tominimize voltage and current peaks, and gain themost benefit out of the fast switching devices.Regarding drivers, the cascode switch iscompatible with standard FET gate drivers. Theenhancement-mode devices can be driven withconventional gate drivers plus an external R-Cnetwork. But a dedicated driver IC will ultimatelyprovide higher performance using lower power. Foreither type of GaN, new controller ICs will benecessary to take full advantage of the topologiesand higher frequencies enabled by GaN.“In line with our ‘Product to System’ approach,

our customers can now choose enhancementmode or cascode configuration technologiesaccording to their application/systemrequirements. We also are developing SMDpackages and ICs that will further leverage thesuperior performance of GaN in a compactfootprint. As a real world example, using our GaNtechnology, a laptop charger found on the

Infineon Expands its GaN Portfolio

“Through the acquisition of International Rectifier’s GaNplatform together with our partnership with PanasonicInfineon is clearly positioned as the technology leader inthe promising GaN market,” stated Andreas Urschitz,President of the Power Management & MultimarketDivision of Infineon Technologies AG


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09_pee_0315.indd 1 23/04/2015 12:57

10 MARKET NEWS


market today could be replaced by one that isup to four times smaller and lighter”. Urschitzcommented. “Infineon is committed to serve its customers

with a broad product and technology portfolioincluding reliable power devices based on GalliumNitride. We are convinced that enhancementmode GaN switches, together with ourcorresponding driver and optimized drivingscheme, will provide high value to our customers,while the dual sourcing concept will help themmanage and stabilize their supply chains,” Urschitz

stated. Thus GaN will complement the existingportfolio of CoolMOS™, OptiMOS™ and SiC activedevices. “We will start by developing a portfolio ofdiscrete switches but, we will soon also offerintegrated solutions; leveraging the fact that GaN isa viable alternative technology. Infineon recognizesthat GaN switches will enable the next level ofsystem efficiency, energy saving and power densityand, therefore, decided to invest a significantamount of its R&D effort to pursue this challenge.Infineon’s GaN-on-Silicon product portfolio willsupport energy efficiency through further

minimizing losses compared to Silicon. In addition,we expect that GaN will play a role in theautomotive market - not only due to higherefficiency but also because GaN enables smallerform factors. However, we expect GaN will take offin the automotive market once its reliability underadverse conditions has been fully proven.Regarding our SiC strategy we see applicationsmore in the 600 V and above range, whereas GaNwill be covering the range below and up to 600 V.”

www.infineon.com/gan

Transphorm Inc. announced in partnership with ON Semiconductorthe introduction of two co-branded 600 V GaN cascode transistorsand a 240 W reference design that utilizes them. This introductionbuilds on the partnership between Transphorm Inc. and ONSemiconductor announced in September 2014.

With typical on-resistances of 150 and 290 m, the two new GaNproducts, TPH3202PS (ON Semi equivalent: NTP8G202N) andTPH3206PS (ON Semi equivalent: NTP8G206N), are offered in anoptimized TO-220 package for easy integration with customers’existing circuit board manufacturing capabilities.

The two-stage evaluation board NCP1397GANGEVB(Transphorm equivalent: TDPS250E2D2) is offered as acomplete reference design so that customers can implementGaN cascode transistors in their power designs. The evaluationboard is representative of a production power supply that hasbeen re-designed for smaller size and higher performancesystems, and it highlights the capability and potential of GaN

Transphorm and ON Semiconductor Start Production of GaN Power Devices

transistors in this power range. The boost stage delivers 98 %efficiency and utilizes the NCP1654 power factor correctioncontroller. The LLC DC-DC stage uses the NCP1397 resonantmode controller to offer a 97 % full load efficiency. Thisperformance is achieved while running at 200+ kHz and –impressively – is also able to meet EN55022 Class B EMCperformance. Full documentation is available at theTransphorm and ON Semiconductor websites.

The Transphorm GaN HEMT devices are in mass production atthe Fujitsu Semiconductor group’s CMOS-compatible, 150 mmwafer fab in Aizu-Wakamatsu, Fukushima, Japan. The large-scale,automotive-qualified facility, which is providing exclusive GaNfoundry services for Transphorm and its partners, will allowexpansion of GaN power device production according to thegrowing demand.

www.transphormusa.com, www.onsemi.com

Ottawa-based GaN Systems Inc. has signed anagreement with Japanese semiconductor andelectronic component distributor, Value Integrated

Technology (Vitec) to distribute power GaN devicesto its customer base in Japan, Taiwan, and China,including many well-known consumer brand and

enterprise equipment manufacturers.Announcing the deal, Jim Witham, CEO, GaN

Systems said: “Vitec has a strong presence in theconsumer and enterprise segments and has linkswith major brand name manufacturers. Demand forour GaN power switching transistors is growing veryrapidly. Multiple consumer and enterprise productsdesigned with our GaN devices will be launchedstarting in 2015, and we’re excited that Vitec andGaN Systems will expand this reach substantially.”GaN Systems have developed and productized acomprehensive portfolio of GaN E-HEMT powerdevices with current ratings from 7 A to 220 A, inboth 650V and 100V ranges. “Vitec is expanding intoindustrial and automotive markets and GaN Systemshas a very strong portfolio of higher-current GaNpower switches for high-power applications in thesesectors. GaN Systems’ product portfolio alsocomplements our existing businesses in solarinverter and infrastructure power. Together, we willhave very strong business growth for next-generationhigh-efficiency power designs”, commented OsamuKomaki, Vitec’s VP of Marketing.

www.gansystems.com, www.vitec.co.jp

GaN Systems Expands in Asia


MARKET NEWS 11


The days of car companies controlling thefuture of the automotive industry arenumbered. Indeed, waves of creativedestruction and globalization are shakingthe industry due to electrification of cars.

Current rumours suggest Google hasbeen working on a “super battery” for thelast 3 years and Apple on an electric carwhilst vacuum manufacturer Dyson isreportedly sinking $15 million ofinvestment into new battery technology forelectric vehicles. “Indeed pure electric,hybrid electric and fuel cell cars arepositioned to take $188 billion of the

whole $1 trillion market by 2025 and that isjust the start - autonomous vehicles comenext taking almost $77 billion by 2030”,expects Franco Gonzalez, Senior ResearchAnalyst IDTechEx in the report “FutureTechnologies for Hybrid and Pure Electric Cars 2015-2025”. The stakesat play in this sector have never been sohigh with 2015 so far seeing more pieces ofthe puzzle taking strategic steps towardselectrification of the car industry. “The mostrecent is the billionaire lawsuit of BASFagainst Umicore in relation to allegedinfringement of the later into Argonne Lab

NMC patents. On the other hand Toyotaannounced the most recent highlightsabout the Mirai fuel cell car and how itrepresents the beginning of a new era, withthe support of the Japanese government.VW on the other hand is not so sure aboutthis “new era” and reportedly acquired astake in a new solid state battery start-up.The latest news suggest the Renault-NissanAlliance is tense in relation to CarlosGhosn’s consideration to source batteriesfrom other sources.”

www.idtechex.com/evcars

Winds of Change in Automotive Industry

www.power-mag.com

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Nuremberg: 19-21.05, Booth: 9-301


12 INTERSOLAR 2015 www.intersolar.de

ISPSD 2015 www.ispsd2015.com


This year’s Intersolar Europe Conference/Exhibition in Munich (June 9-12)offers expert insights into the solar markets and technologies of the future. Itwill run alongside Intersolar Europe, the world’s largest exhibition for the solarindustry attracting around 1,100 attendees and 200 speakers. Worldwide PV module capacity grew by an average of 44 % each year

between 2000 and 2013, according to the current Photovoltaics Reportpublished by Fraunhofer Institute for Solar Energy Systems (ISE). Analystsexpect a further 55 GW to be added in 2015, which would correspond to anincrease of 20 % from the 46 GW recorded in 2014. This growth is partlyattributed to ongoing technological advances in photovoltaics, which havecontinuously improved solar cell and module efficiency, while betterproduction technologies have reduced material consumption. Technology andeconomies of scale also caused prices to drop rapidly. With solar energycontinuing to expand, the industry is faced with a number of questions, suchas how technological innovations can be used to optimize on-siteconsumption, how grids can be designed to accommodate for the growingshare of solar energy and how energy can be stored efficiently andeconomically. For businesses to be successful, they require knowledge of the various

international photovoltaics markets and their different political, economic andlegal conditions. Currently, more than half of the world’s photovoltaics capacityis installed in Europe, where a steady annual growth of 10 GW is expectedover the next few years. Growth rates are considerably higher in markets likeChina, the USA and Japan, however. During several sessions at the IntersolarEurope Conference, experts will take a detailed look at the markets in Europe,Asia, North and South America, the Middle East and Africa, as well as theirpolitical, legal and financial conditions. In Europe, the era of feed-in tariffs is drawing to a close, making new

financing models more important than ever and an essential component ofnew business models. Several presentations shed light on current trends infinancing and managing solar installations, focusing in particular on new formsof financial cooperation between local energy suppliers, project developersand financial service providers.

Bottleneck energy storageees Europe, the international exhibition for batteries, energy storage systemsand innovative production, will open its doors for the second time on June 10.With around 250 exhibitors, last year’s ees Europe, which was organized inconjunction with Intersolar Europe, was already a success. Between them, thetwo exhibitions played host to a total of around 1,100 exhibitors andwelcomed 42,380 visitors. This year, exhibition space is set to increaseconsiderably – the organizers expect the exhibition to span an area of around9,000 sqm, four times larger than the previous year. Industry leaders, such asLG Chem, VARTA Storage, HOPPECKE, Deutsche ACCUmotive, Samsung SDI,Saft, Sonnenbatterie and Sharp Electronics, already view ees Europe as aleading industry platform. Technical advances and increased demand are driving forward the market

for battery storage systems, which, in turn, is reducing prices. According to acurrent survey by the German Solar Industry Association (BSW-Solar) andIntersolar/ees Europe, electricity storage systems had already considerablyreduced in price in the second half of 2014 compared with the previous year.The costs of lead-acid batteries dropped by 27 %, while lithium storagedevices became 22 % cheaper. As such, storage solutions are becomingincreasingly important for the mass market and may hold the key to one ofthe biggest challenges facing the energy transition – storing volatile renewableenergy until it is needed.

Annual Meeting of Solar Power

The 27th IEEE International Symposium onPower Semiconductor Devices and ICs(ISPSD), sponsored by the IEEE ElectronDevices Society and technically co-sponsoredby the IEEE Power Electronics Society, will beheld at Kowloon Shangri-La, Hong Kong, May10– 14, 2015.ISPSD’s topics include: Device Physics,

Device Design, High Frequency Devices, HighPower Devices, Smart Power Devices, RFPower Devices, Safe-Operating Area,Reliability, and ESD; Process Integration,Doping Technology, Lifetime Control,Passivation, and Crystal Growth; DeviceModeling and Circuit Simulation, Layout, andVerification Tools; Si, GaAs, SiC, GaN, andDiamond Materials; Isolation Techniques,SOI, Power IC Design, Device Technology,Energy Capability and SOA, Reliability, PowerSoC, and Monolithic vs Hybrid Integration;Novel Packaging Concepts, Power SiP, Stressand Thermal Analysis, and ThermalManagement; Hybrid Vehicles, Computer andTelecom Power, Motor Drives, and UtilityApplications.

With the Society’s awareness in renewableenergy and energy efficiency, powersemiconductor devices and power ICs havebecome a focal point as a key enablingdevice technology to help solve the world’senergy challenge. ISPSD 2015 will have anexpected attendance of 400–500 researchersfrom industries, universities, and researchinstitutions all over the world. Traditionallymore than 70 % of ISPSD attendees areengineers and technical managers from thepower semiconductor industry. Morerecently, representatives from CMOSfoundries and power electronics design firmsare also drawn to the conference.ISPSD 2015 will commence with a one-day

tutorial program on topics such as WBGdevices in harsh environment, power ICs foruse in automotive applications, hightemperature packaging technologies, impactof power grid and connection of renewableenergy sources, and advances in powerconversion for mobile computing.The conference will feature several plenary

talks given by world renowned experts and a

collection of high quality technicalpresentations, along with a poster session tooffer a closer interaction among theattendees.The plenary talk “GaN Transistors – Giving

New Life to Moore’s Law”, features AlexLidow, CEO Efficient Power ConversionCorporation (EPC). Enhancement-modegallium nitride transistors have beencommercially available for over five years andhave infiltrated many applications previouslymonopolized by the aging silicon powerMOSFET. He will discuss the state-of-the-artand the expected progress of GaNtechnology over the next few years, showingthat Moore’s Law is alive and well in theworld of power semiconductor technology.He will also enumerate the advantages ofGaN over silicon in terms of performance,cost, and reliability – as he will do at PCIMEurope some days later. Other plenaries will cover the power

semiconductor market (Yole), Traction (CSRZhuzhou Institute), nd LED Lighting(Panasonic).

Power Electronics Conference in Hong Kong

EVENTS_Layout 1 23/04/2015 14:14

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14 RESEARCH


Power GaN Made in EuropeIn the recently completed EU group-project called HiPoSwitch eight Europeaninstitutional and industrial project partners led by the Ferdinand-Braun-Institut,Leibniz-Institut fuer Hoechstfrequenztechnik (FBH) have successfullydeveloped prototype power transistors that use Gallium Nitride (GaN) inenhancement mode.Highly efficient power electronics is needed for low volume and low weight

future power conversion systems. The project aimed for the exploitation ofnovel (GaN transistors for advanced switched mode power supplies. Highvoltage normally-off GaN power devices on Si substrates in vertical devicearchitecture are to be developed and its technology transferred to anEuropean industrial environment. The devices are planned to reliably operateat elevated junction temperatures up to 225°C. The project covers the fullvalue added chain from substrate technology and epitaxy to complete powerelectronic system prototypes, from experienced partners in automotivetechnology, power electronic system and circuit design, power semiconductortechnology, high temperature packaging technologies, GaN power devicetechnology including GaN on Si epitaxy as well as sophisticated devicecharacterization and reliability evaluation techniques

One percent efficiency increase saves one power plantPower converters using these novel GaN transistors have less than half thelosses of existing technologies and make conversion efficiencies of over 98 %practical. A great deal of primary energy consumption can be saved with theirwidespread use. “More than 3000 terawatt-hours (TWh) of power are

generated in Europe annually,” said Joachim Würfl, head of both theHiPoSwitch project and the GaN Electronics Business Area at FBH. “If you onlyconverted a quarter of the electricity produced annually in Europe to adifferent level and increase the efficiency level by two percentage points, youcan turn off at least two coal-fired plants,” Würfl explained.Gallium nitride possesses ideal physical properties for a semiconductor.

“GaN components are therefore very efficient and very fast power switches.And this is because of their low on-state resistance with negligible losses,”Würfl emphasized. “At the same time, higher switching frequencies mean thatpassive elements of the power converter, i.e. the inductive coils and capacitors,can be considerably smaller in size – a definite improvement on the systemsside.”GaN has already been utilized in microwave transistors for a long while and

applied in thin layers mostly on silicon carbide (SiC) substrates. Thistechnology has been further developed by FBH over the last few years for600 volt-rated power transistor switches. “This works well, but it is tooexpensive for mass markets. As an alternative, the processes developed for SiCcan be transferred to considerably more cost-effective, but technologicallymore challenging silicon substrates,” Würfl explained. The advances made inthe HiPoSwitch project fit hand-in-glove with FBH’s collaboration partners.Among other accomplishments, FBH was so successful in optimizing theprocessing of GaN switching transistors on SiC and silicon (Si) that nearly idealcomponents became feasible. Among others, comprehensive investigations ofdrift and degradation effects carried out by University of Padua and Universityof Vienna provided the foundation for this. The finished transistor chips were finally assembled into low-induction

ThinPAK housings by Infineon in Malaysia. “The single transistor measures only4.5 x 2.5 mm and is optimized for breakdown voltages of 600 V. It has an on-resistance of 75 mΩ and handles a maximum of 120 A. “We are the only

HiPo Switch 200-mm GaN-on-Silicon wafer

HiPo GaN device

ones in Europe who can manufacture these kinds of normally-off transistors atpresent,” Würfl underlined.The Belgian company EpiGaN together with facility manufacturer Aixtron

moved the epitaxy to Si – so that the manufacturing costs for the substratesdrop by more than a factor of ten. At the same time, the wafer diameterincreased to 6” or even 8”, a necessary step towards cost-effective industrialproduction. Chip-manufacturer Infineon matched up the newly developedGaN technology with a Si process line for industrial production of powersemiconductors at their Austrian location in Villach. Part of the projectpossessed a decidedly “exploratory character”, as Würfl puts it, due to thecompletely new techniques and processes for implementing GaN powertransistors that had never before been tried. Promising ideas for producingsemiconductors were successfully tested together at the University of Viennaand the Academy of Sciences in Bratislava, Slovakia.The Austrian company Artesyn is positioned at the end of the value-added

Research_Layout 1 23/04/2015 14:18

RESEARCH 15


chain as a systems-level partner. They developed a 3-kW rectifier fortelecommunications applications including cellular base stations. This unitconverts line voltage to DC with an efficiency of 98 %. A specializedswitching topology was developed and implemented that is matched to the

properties of the GaN switching transistors. Thanks to their broad usage, themarket for energy-saving power converters is enormous. Their smaller sizeand weight also makes them highly attractive for aerospace applications.The FBH researches electronic and optical components, modules and

systems based on compound semiconductors. Specifically, FBH develops lightsources from the visible to the ultra-violet spectral range: high-power diodelasers with excellent beam quality, UV light sources and hybrid laser systems.Applications range from medical technology, high-precision metrology, andsensors to optical communications in space. In the field of microwaves, FBHdevelops high-efficiency multi-functional power amplifiers, and millimeter wavefrontends targeting energy-efficient mobile communications as well as carsafety systems. In addition, compact atmospheric microwave plasma sourcesthat operate with economic low-voltage drivers are fabricated for use in avariety of applications, such as the treatment of skin diseases. The FBH has astrong international reputation and ensures rapid transfer of technology byworking closely with partners in industry and research. The institute has a staffof 290 employees and a budget of 23 million Euros.

www.fbh-berlin.com, www.hiposwitch.eu

HiPo GaN sub-assemby in a 3-kW rectifier for telecommunications applicationsSource (3): FBH Berlin

The Perfect FitPCIM

Europe 2015

Hall 9-204

Siemens has developed an exceptional electric motor that combines highpower with minimal weight. New simulation techniques and sophisticatedlightweight construction enabled the drive system to achieve a unique weight-to-performance ratio of 5 kW per kg. The electric motors of comparablestrength that are used in industrial applications deliver less than 1 kW per kg.The performance of the drive systems used in electric vehicles is about 2 kWper kg. Since the new motor delivers its record-setting performance atrotational speeds of just 2,500 revolutions per minute, it can drive propellersdirectly, without the use of a transmission.Sometimes a technological revolution can be captured in a few simple

figures. In this case, those numbers would be five kilowatts per kilogram.What these figures express is the power/weight ratio of a new electric motorfrom the Electric Aircraft Unit at Siemens Corporate Technology. “With aweight of 50 kilograms, it delivers around 260 kilowatts of continuousoutput,” explains Frank Anton, head of the electric aircraft team. “That’s aworld record for this power class. Powerful electric motors used in industryhave a power/weight ratio of, at most, one kilowatt per kilogram, and in the

Ultra-Light Motor for the More Electric Aircraft


16 RESEARCH


automotive industry they reach two kilowatts per kilogram at best.”For the applications that are of interest, the power/weight ratio is a crucial

metric. Back in 2011, researchers working together with Airbus Group andDiamond Aircraft, notched up a world premiere with the maiden flight of thefirst ever aircraft powered by a electric hybrid drive. 2013, the same plane flewwith an optimized drive system. The electric motor used in this setup had apower/weight ratio of around 5 kilowatts per kilogram, which at the time wasunsurpassed, but it only delivered a relatively modest 60 kilowatts ofcontinuous power — enough for a single-engine light aircraft at most.Siemens’ goal is therefore to develop an even more powerful electric motor

of minimal weight, since this is precisely the precondition for being able eitherto replace completely the internal-combustion or jet engines currently used inaircraft and helicopters or to combine those engines with an electric drivewithin a hybrid system.

CAE optimized layoutIn order to develop their record-beating motor, experts set about testing all thecomponents from previous motors and optimizing them as far as wastechnically feasible. In this way, they were able to cut the weight of the motor’sso-called end shield by more than half, reducing it from 10.5 kg to a mere 4.9kg. Made of aluminum, this component supports the motor bearing and thepropeller, which is fixed to a continuous drive shaft without a gearbox inbetween. “It’s subject to very large forces whenever the nose of the aircraftmoves up or down, so it’s an absolutely vital component for the safety of theaircraft,” Anton explains. “That’s why, in the past, it was always pretty solid andtherefore correspondingly heavy.”To slim down this end shield, experts in lightweight engineering and the

developers of Nastran at Siemens Product Lifecycle jointly developed a specialoptimization algorithm and integrated it into the Siemens CAE program NXNastran. This algorithm breaks down the component into more than 100,000individual elements and simulates the forces acting on each one of these cells.In the course of optimization loops, the software is able to identify theelements that are barely subject to stress and are therefore dispensable. The result was a filigree structure that nonetheless met all the safety

requirements in regard to stiffness and stability. And that was only the start.Developers now have come up with the prototype of an end shield made ofcarbon fiber-reinforced polymers that weighs a mere 2.3 kilograms, less than aquarter of the conventional component.Regarding the motor’s electromagnetic design, the developers used a few

tricks to reduce weight by as much as possible. Cobalt-iron alloy in the stator

features high magnetizability, and the permanent magnets of the rotor arearranged in a so-called Halbach array. This means that four magnets arepositioned next to one another in such a way that the orientation of each fieldis in a different direction. One result of this is that magnetic flux can beoptimally directed with a minimal use of material. A new cooling concept hasalso helped reduce weight. “Because of the high current density, we needed asmart way of dealing with the waste heat,” Anton explains. “We use direct-cooled conductors and directly discharge the loss of copper to an electricallynon-conductive cooling liquid — which in this case can be, for example,silicone oil or Galden.”

Regional airliners with hybrid drivesThe new electric motor is relatively powerful, not far short of being sufficientto propel a regional airliner, since output power between 500 kW and 2 MWwould be enough. Such new drives would prove a blessing for theenvironment and for people living near airports, since they would significantlyreduce not only CO2 emissions from air traffic but also aircraft noise. At thesame time, airlines would benefit from big cost savings. “Kerosene accountsfor over 50 percent of an aircraft’s lifecycle costs,” Anton explains. “The use ofhybrid electric drives would reduce fuel consumption by around 25 percent,with the result that the total costs of an aircraft would fall by about 12 percent.”This is because an intelligent hybrid drive combining an electric motor and a

combustion engine can use turbines that not only are significantly smaller thanthose of today but can also be continuously operated at peak efficiency duringflight. Today’s turbines, by contrast, are designed to deliver a maximum level ofpower that is only required during takeoff and ascent. Aside from that, theyonly require 60 percent of their maximum output. “With a kerosene-electrichybrid drive system, the turbine would run continuously at optimum powerand provide energy, via a generator, for the electric motor powering thepropeller,” Anton explains. “During takeoff, extra energy would be provided bya battery.”Siemens is now working with Airbus to turn this vision of electrically

powered flight into reality. Under the terms of a cooperation agreement datingfrom 2013, Siemens is involved primarily in developing new electric drivesystems, while Airbus is working on new aviation concepts. If the engineerssucceed in developing electrical motors that are even lighter and even morepowerful, the first 60–100-seater aircraft with a hybrid electric drive could betaxiing for takeoff as early as 2035.

www.siemens.com

Digital model andreal high-efficiency motorfor electricaircrafts


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18 PCIM EUROPE 2015 www.pcim-europe.com


Highlights of the conference include top-class keynote speeches at thebeginning of each conference day. They are covering for example thedevelopment trend for power semiconductor devices or future batterymanagement solutions. Besides 24 oral sessions and two poster sessions thereare five special sessions on: “Solar Inverter Topologies“, “Passive Components”,“Digital Control Power – the Future of Power Electronics”, “Power GaN forAutomotive Applications” and “E-Mobility”(see PEE 1/15, pages 18-20). Nine

seminars and nine tutorials of well-known experts regarding topics such as“Practical Application of 600 V GaN HEMTs in Power Electronics“ or “AdvancedDesign with MOSFET and IGBT Power Modules“ round up the program.“The situation for power electronics and thus for power semiconductors in

the coming years is very promising, but we see a considerable shift to China interms of consumption”, commented Leo Lorenz, General Chair of the PCIMEurope Conference. “Silicon devices and here particularly IGBTs will dominatethe market over the coming years, though Silicon Carbide and Gallium Nitrideare gaining more attention. Silicon Carbide was first seen in Solar Inverters, butdue to price pressure inverter manufacturers now are stepping back tomultilevel Silicon topologies”.Since Silicon devices have been matured over the last two decades

progress is incremental, whereas SiC and GaN are moving fast. Thus thefocus here is on some interesting conference contributions in power modulesand SiC/GaN devices after a more general introduction to the PCIM 2015 inour previous issues.

RCDC IGBT 6.5 kV ModuleIn Infineon’s (www.infineon.com) commonly known 6.5 kV IGBT-modulesIGBT and freewheeling diode chips are assembled in parallel connection on sixAlN substrates, which are mounted on an AlSiC base plate. Within the new1000A / 6.5 kV module all former chips positions are replaced with the RCDC-chips (Reverse Conducting IGBT with Diode Control). The functionality of anIGBT-switch and a freewheeling diode is given by this single chip solution. Dueto the integration into the existing module platform of high insulation modulesthe outer diameters as well as the pinning remain unchanged.One of the major advantages of the RCDC technology is the significant

improvement of the thermal resistances within the module (Rth_JC) and towardsthe cooler (Rth_CH), which allows for an increased ampacity while the junctiontemperature remains at 125°C. This is in contrast to previously announced1000A / 6.5 kV modules, which rely on an increase of the junctiontemperature to 150°C. The reason for the improved thermal resistances is theincrease of the effective Silicon area available during operation in IGBT- as wellas diode-mode. While in previous 6.5 kV modules with footprint 140 mm x190 mm 24 parallelized silicon dies are contributing to IGBT mode, now 36RCDC chips serve for heat spreading. In the case of diode-mode theimprovement is even higher due to three times more active dies in parallelcompared with the common IGBT module. Since the same silicon volume isused during IGBT and free-wheeling mode the thermal coupling during IGBT-and diode-mode has to be taken more seriously into account than for standardIGBT, where the thermal coupling between the spatially separated IGBT anddiode dies occurs mainly via the substrate and base plate. However, a beneficial

reduction of the thermal ripple is observed, whichcan lead to an additional improvement of thepower cycling reliability. By the means of FEM-simulation the Zth-curves of IGBT-mode, diode-mode and the thermal coupling have beeninvestigated with the result that the Rth_JA of theIGBT-mode is reduced by roughly 20 % and of thediode-mode even by roughly 50 % compared tothe FZ750R65KE3 module.

Low inductive phase-leg IGBT module foreasy parallelingPresent IGBT module solutions are at its limit whenit comes to advanced and faster IGBT/diode chip-sets since the overall stray inductance per switchedampere is too large and high over-voltage will occur.Also the available electrical contact area of today’smodules is limited and dates back to times whenthe packages were rated with 40% less current thannow. In addition modules lack of scalability and thus

GrowthThroughInnovationsOver 240 speakers from more than 25 countriespresent the latest technological trends in powerelectronics components and systems at the PCIMEurope 2015 Conference. And this conferenceserves also as a platform for productannouncements, which will be demonstrated at theexhibition floor by around 400 companies.

LEFT: The world market for power semiconductors(discretes/modules) 2012-2018

Source: PCIM/Fuji Electric

PCIM copy_Layout 1 23/04/2015 14:25

www.pcim-europe.com


a large variation of outlines exist to match various inverter ratings. The presentednew LinPak module concept from ABB (www.abb.com/semiconductors)addresses all these issues and is published as an open standard, meaningmodule manufacturers can freely adopt the outline and customers benefit froma standard solution provided by more than one supplier making inverter designseasier. The LinPak offers as well exceptional low stray inductance of 10 nH andan easy customer interface enabling the construction of a very low inductive DC-connection with sufficient contact area for the high current densities. This is theideal fit for the full utilization of the advanced fast IGBT/diode chip sets such asthe 1700V SPT++. It also makes the package fit for future hybrid and full SiCsolutions that come with even faster switching speeds. With the LinPak just onemodule type per voltage rating is needed. Thanks to a homogenous current path

LinPak enables parallel connection of more than four modules without any significant de-rating

concept, the module enables parallel connection of more than four moduleswithout any significant derating.Due to the inherent advantages of wide-badgap (WBG) materials such as

SiC and GaN, today such devices provide low switching losses making themsuitable for higher frequency applications and low leakage currents for highertemperature operational requirements. Also, unipolar (WBG) devices providesvery low losses at low currents compared to Bipolar switches such as the SiIGBT due to the inherent built in voltage of around 0.7V-0.8V for Silicon.However, Silicon Carbide based devices in particular suffer from significantlyhigher costs due to starting material manufacturing costs, expensive epitaxialgrowth especially for higher voltage devices with thick base regions. Hence toreduce cost, the utilization of less SiC device area is one approach but at thecost of higher losses and higher thermal resistances especially for unipolar SiCMOSFETs and Diodes. Furthermore, unipolar WBG devices will suffer fromoscillatory behavior during switching transients and high on-state losses athigher temperatures and currents which again are more challenging for highervoltage devices. Finally, unipolar devices provide less fault current handlingcapability compared to state-of-the-art bipolar silicon devices. Therefore, itbecomes clear that the above aspects of WBG technologies have hindered theintroduction of such devices into mainstream power electronics applications.Thus ABB proposes a hybrid approach to resolve some of the above issueswith potential advantages for future power electronics applications. To investigate the new hybrid Cross Switch XS concept, test samples were

made consisting of a 1200 V/25 A SPT IGBT device in parallel to a 1stGeneration Cree 1200V/30A / 80 mΩ SiC MOSFET. The area ratio of the IGBTto MOSFET was 3:1. The total current rating of the combined XS hybrid washence at 50 A. For comparison, reference samples were also made with oneconsisting of two paralleled SPT IGBTs and the other having two paralleled SiCMOSFETs with the same 50 A rating for each. No separate gate units wereutilized and the same gate signal was applied for all chips in parallel. The XShybrid offers 40 % lower losses compared to the Silicon IGBT referencesample and softer performance than the SiC MOSFET.

7th generation IGBT modules for compact power conversion systems Recently the main requirements found in the market are further downsizing

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and higher efficiency of power conversion systems. Enhanced power densityof the power modules will be the key to succeed. The increasing packagereliability in higher junction temperature operation will be the major challenge.By further improvement of the chip characteristics and the development ofnew high reliability package materials and technologies, the performance ofthe modules were significantly improved. Additionally, the maximum operatingtemperature was even increased to up to 175°C. The new 7th generationIGBT module to be introduced by Fuji Electric (www.fujielectric.co.jp)

demonstrated. By improved package thermal characteristics, the temperatureincrease of chipset is relaxed and it has been possible to enhance the powerdensity of the module. As a result, a new 800 A rated module in 1200 V classDual XT is developed (highest conventional rating was 600A). The foot printper unit current is 32 % smaller than the conventional 900A 2in1 module.The inverter losses at the same time are reduced by 12 %.

New generation 10 kV SiC power MOSFET and diodes The development of solid-state power distribution technology has beenhindered in the past by the lack of availability of efficient medium-voltagepower semiconductor devices. 4H-SiC, due to its 10x higher breakdownstrength when compared to Silicon has long been thought to be a solution,however, manufacturing maturity wasn’t available until recently. Now, with600-1700 V SiC diodes on the market for over a decade, and 1200-1700 VSiC MOSFETs available for over four years, medium voltage SiC MOSFETs arealso maturing. 3300 V SiC MOSFETs and diodes have been announcedpublicly as being used in rail systems, devices with blocking voltages above3300 V are also advancing in maturity. In particular, the 10 kV SiC MOSFETand diode chip set is of particular interest in a number of applications such assimpler, two-level or three-level medium voltage drives using 4.16 kV or 7.2 kVline-voltages. Cree (www.cree.com/power) will present a much improved10 kV SiC MOSFET and diode chip set relative to initial research samplesmade in the past. The specific on-resistance, total current per die, andswitching losses per chip are now much improved.

Work on the 10 kV SiC MOSFET has been ongoing for over five years. Thedevice structure being developed is a planar DMOSFET structure, withbackside drain contacts, and top-side gate and source contacts. The firstgeneration, developed in 2007-08 timeframe, with 8.1 mm x 8.1 mm die size,has been upgraded to a newer “generation 3” technology. The n-type dopinghas been optimized, and a more compact guard ring edge termination hasbeen employed, to reduce the cell pitch and provide lower specific RDSON,

realized further downsizing and higher efficiency of power conversion systems. The 7th generation IGBT realized the shrinking of the die and the higher

power density of chips, by the development of a new fine pattern gate trenchstructure, new field stop layer and thinner drift layer. The on-state voltage wasreduced by 0.3 V compared to the 6th generation while the current densityremains the same. For the turn off waveform, the tail current was reduced andthe voltage rises faster due to reduction of the miller capacitance. By theabove described improvements 10% reduction of turn-off losses will be

New 800 Arated modulein 1200 V classDual XT fromFuji Electricfeaturing 32 %smaller footprint


www.pcim-europe.com PCIM EUROPE 2015 21


dropping from 160 mΩ-cm2 in the first generation to ~ 100 mΩ-cm2 in thenewer generation at 25°C. For the 10 kV, 20 A SiC diode die, the die size anddesign has been made compatible with the 10 kV SiC MOSFET. The forwardvoltage drop is less than 5 V at room temperature.

Silicon Carbide Schottky-Barrier diode rectifiers with high avalancherobustnessSilicon Carbide Schottky diodes are gradually replacing Silicon rectifiers in thehigh voltage power conversion systems with requirements for high efficiencyand compact size. SiC Schottky rectifiers utilize a Junction-Blocked Schottky(JBS) design, in which the Schottky metal is shielded by a mesh of closelyspaced shielding p-bodies. Available literature data for avalanche robustness ofSiC Schottky diodes are scarce and fragmentary, and no avalanche currentsabove 12 A have been reported for Schottky-barrier diodes yet. On the otherhand, practical applications often require much higher avalanche current. Clearunderstanding of the effect of inductive load on avalanche robustness is yetanother requirement. Fairchild Semiconductors (www.fairchildsemi.com)will introduce a new 1200 V / 15 A SiC Schottky-barrier rectifier with a JBSdesign. The junction termination of the new rectifier has been optimized toprevent early breakdown around device periphery. Avalanche energy in therange of loads between 0.02 and 20 mH increases from 0.38 J for a load of0.02 mH to 0.62 J for a load of 20 mH. Avalanche robustness of the new SBDrectifiers is close to that of the p-n diodes that were formed on the samewafer together with the SBDs. High avalanche robustness of the new SBDs isalso verified for repetitive avalanche conditions.

Large area embedded GaN power transistorsLarge area 650 V lateral normally-off GaN power transistors that can providemore than 35 A are being introduced into the open marketplace this year. Verylow inductance packages are needed because the devices can switch on andoff in less than 20 ns therefore every nH of inductance can result in seriousgate voltage over-shoot. In addition, lateral GaN devices can provide very highcurrent operation only if the device electrodes are augmented by thick printedcircuit board equivalent plating. This process augments the conventional,

limited thickness metallization of the die and thereby removes theelectromigration concerns. However, it is the thermal issues that largely dictatethe form of the packaging of power transistors. GaN Systems(www.gansystems.com) will present a new embedded PCB plating solution. The GaNPX package is the first implementation of a discrete GaN power

device to be embedded within a laminate construction. Conventional

A comparison of the first generation 10 kV SiC MOSFET cross-section and top-view (left)with the improved third generation 10 kV SiC MOSFET shown on right. Optimized n-typedoping and a more compact edge termination allows the specific RDSON to drop from~160 mΩ·cm2 to ~100 mΩ·cm2

Embedded GaN transistor showing multiple drains and source busbars

packaging techniques such as clip or wire bonding, and molding compounds,are replaced using a series of galvanic processes. The GaN die is protectedwithin the laminate construction. The die is thinned to 250 microns; thisallows the total package thickness to be kept to less than 450 microns. Thisgreatly reduces the critical loop inductance and hence the difficulties of drivingthe high speed, high current switch. When carefully implemented, the newembedded power GaN devices provide a small volume, low resistance andlow inductance package. Three large area, low on-resistance, 650V devices arecurrently being produced. As will be shown, they are thermally and electricallysuperior to the SJ MOSFETS.

Freewheeling diode-less SiC-inverter Hitachi (www.hitachi.com) will demonstrate a FWD-less SiC-inverter withfast short-circuit protection. 600-V rating SiC-MOSFET was developed andintegrated into an inverter module without FWDs. The power loss of theinverter was reduced by 60 % as compared with conventional Si-inverter. Inaddition, fast short-circuit protection of the inverter by using shunt resistancesis possible. These results indicate super-small size, very-low cost and safetyoperation of the SiC-inverter.A conventional Si-Inverter uses both Si-IGBT and Si-FWD with inverse-

parallel connection. On the other hand, since SiC-MOSFETs have reverseconduction characteristic, FWDs can be eliminated. Though the body diode(BD) of the SiC-MOSFET has high on-voltage, the low on-voltage channelconduction by synchronous rectification can minimize the BD conduction onlyduring dead time.

Configuration of a fabricated 3-phase 200-V-class inverter, which includes a diode-bridge, an electrolytic capacitor, and a FWD-less SiC-inverter module


22 POWER GaN www.ti.com/GaN


GaN FET Module Performance Advantage over SiliconGallium Nitride (GaN) FETs are increasingly finding use as next-generation, high-power devices for powerelectronics systems. GaN FETs can realize ultra-high power-density operation with low power loss due tohigh carrier mobility in the two-dimensional electron gas (2DEG) channel, and high breakdown voltage dueto large critical electric field. GaN FETs are a majority carrier device, therefore, the absence of reverserecovery charge creates a value proposition for high-voltage operation. Narendra Mehta, Senior SystemsEngineer GaN products, Texas Instruments, Dallas, USA

With GaN devices now being grown onaffordable Silicon substrates, compared toGaN on Sapphire or bulk GaN, power GaNFETs will find an increasing rate ofadoption for highly efficient and formfactor constrained applications in the 30 Vand higher DC/DC voltage conversionspace. In this article the loss mechanismsin a hard-switched DC/DC converter andhow a GaN FET power stage canoutperform Si MOSFETs will beinvestigated and a 80V GaN FET powerstage to 80V Si devices compared.

80-V GaN halfbridgeA GaN FET power stage device such asthe LMG5200 is an 80 V GaN half-bridge power module. This deviceintegrates the driver and two 80V GaNFETs in a 6 mm x 8 mm QFN package,optimized for extremely low-gate loopand power loop impedance. The inputsare 3 V CMOS and 5V TTL logiccompatible. Due to GaN’s intolerance forexcessive gate voltage, a proprietaryclamping technique ensures that thegate voltage of the GaN FETs is alwaysbelow the allowed limit. This deviceextends the advantage of discrete GaNFETs by offering a user-friendly package,which is easy to layout and assembleinto the final product.

The LMG5200 meets the IPC-2221Band the IEC 60950 pollution degree 1clearance and creepage requirementswithout any need for underfill. This isbecause the minimum spacing betweenhigh-and low-voltage pins is greater than0.5 mm. This eliminates the need forboards to be manufactured with underfilland simplifies board design. The pin-outalso eliminates the need for a via-in-paddesign as there is adequate spacing

between the power pins for viaplacement. Additionally, this helps in toreduce board complexity and cost(Figure 1).

DC/DC converter lossesIn this section mechanisms that causelosses in hard switched converters willbe briefly discussed.

A synchronous buck converter (Figure

2) is used as a DC/DC converter tocompare the losses in a hard-switchedconverter. The approach for comparingthe loss mechanism can be applied toother hard-switched converters as well.Losses in a switched-mode convertercan be broadly divided into conductionlosses and switching losses. The high-side MOSFET dissipates most of theswitching losses. Conduction losses are

Figure 1: Top-downview of a GaN FETpower stage device,showing pin-out

Figure 2: Simplifiedview of the buckpower stage

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a function of the duty cycle and areshared between the high- and low-sidedevices. For low-duty cycle DC/DC converters,

the low-side FET has a higher amount ofconduction loss, which can be calculatedas:PCOND(HS) = RDS(ONHS) x I2RMS(HS) (1)PCOND(LS) = RDS(ONLS) x I2RMS(LS) (2)

where RDS(ONLS), RDS(ONHS) is the low-side andhigh-side FET resistance, and IRMS(LS), IRMS(HS)are the low- and high-side RMS currents,respectively.The switching loss (Figure 3) due to the

IDS current and VDS overlap is in the high-side of a buck converter and can beestimated as:

PSWHS = VIN x IOUT x fSW x tSW (3)

where tSW is the switching time. Thisincludes the current commutation timethrough the FET and the time for theFETs drain-to-source voltage to rise / fallby VIN during turn-off and turn-on,respectively.The low-side FET does not have any

switching loss due to zero voltageswitching (ZVS) turn-on and turn-off.The actual waveforms for inductiveswitching are more complicated thanthose shown in Figure 3, however, theerror in the calculated loss is acceptableas long as the correct switching time isused for the turn-on and turn-off.The device construction of GaN

allows very short switching times due tosmall gate and output capacitance forthe same RDSON. As noted in Figure 4,switching time for the GaN FET powerstage is less than 1 ns compared to 6ns for a Si FET with a comparablebreakdown voltage (Si7852DP).Faster switching edges means the

switching losses are significantlylowered in the GaN module compared

to the Si MOSFET-based buck converter.Also there is minimal overshoot in theGaN FET power stage switch-nodewaveforms due to an extremely small(<300 pH) power loop inductance. Thegate loop and common sourceinductance are also minimized in theGaN FET power stage package to bebelow 200 pH. High parasiticinductance in these loops can cause asignificant power loss.Besides the high-side turn-on and

turn-off losses, forced commutation ofthe low-side MOSFETs body diode is asignificant source of switching loss inhigh-voltage DC/DC converters. Thisloss is primarily due to the reverserecovery charge (QRR) in thefreewheeling low-side FET. The powerloss due to reverse recovery is given by:

PRR = fSW x QRR x VRR (4)

Because GaN is a majority carrierdevice, it does not have reverserecovery-based losses. The body diodeof the low-side MOSFET conductsduring dead time. This causes a powerloss in the diode associated with theforward voltage of the diode. GaN has ahigher third quadrant conduction voltage(VSD of 2 V at 10 A for LMG5200)

Figure 3: Turn-on andturn-off losses duringinductive switching

Figure 4: Comparison of a GaN FET power stage (LMG5200) switch-node (left) to Silicon (Si7852DP) switch-node voltage waveform

compared to ~1 V for Si FETs. Hence,the GaN device exhibits a higher powerloss during dead time. It is critical toensure that the dead time is small inorder to minimize this loss. The powerloss associated with the body diode canbe calculated as:

PBD = fSW x VSD x IOUT x (TDEADON + TDEADOFF) (5)

The energy stored in the outputcapacitance of the MOSFETs isdissipated during turn-on. Since theoutput capacitance is a strong functionof the drain-to-source voltage, theproper way to calculate this power lossPCAP is:

PCAP = fSW x QOSS(VIN) x VIN (6)

where QOSS(VIN) is the output charge ofthe MOSFET, evaluated at the inputvoltage. GaN devices, due to their smalloutput capacitance for the same RDSONcompared to Si, exhibit a much smallerPCAP loss as well. Gate driver losses areanother contributor to switching loss. Besides the active device-related

losses in a hard-switched buck converterdiscussed, there are losses associatedwith the inductor. These losses includecore loss and AC- and DC-winding loss,


25_pee_0315.indd 1 23/04/2015 11:52



which also should be taken into accountwhen calculating system efficiency.

Efficiency improvements compared to SiliconFigure 5 shows the efficiency deltabetween a 48 V:12 V LMG5200 buck and80 V Si MOSFET- based buck. TheLMG5200 is switching at 1 MHz while theSi-based implementation is switching at250 kHz and 800 kHz, respectively. Asshown, the LMG5200 has higher efficiencyversus load than the Si solution switchingat a lower frequency (1 MHz vs 800 kHz).This is indicative of the fact that switchingand conduction losses in the GaN FETpower stage are much lower compared tothe similarly rated Si MOSFET. When the SiMOSFET-based converter is redesigned fora 250 kHz switching frequency, higherefficiency for Si designs at light loads asexpected can be seen. However, as theload increases to 4 A, the GaN FET power

stage switching at 1 MHz shows a muchhigher efficiency.A comparison with Si at 800 kHz shows

that the efficiency of the GaN FET powerstage is much higher across a wide loadrange, even while switching at 1 MHz. Acomparison of the efficiencies observed inthe hard-switched buck with the calculatedresults indicates that the calculations arewithin the margin of error for the simplifiedmodel (Figure 6).

ConclusionsPower GaN FETs, due to their extremelylow gate charge and output capacitance,can be switched at extremely highspeeds with significantly reducedswitching losses and improved efficiencycompared to Silicon FETs. TheLMG5200, an 80 V GaN FET powerstage, has been optimized forapplications requiring high efficiencyand/or small form factor. Its advanced

package greatly simplifiesmanufacturability and board designwhile reducing costs. The LMG5200 canimprove the performance across a widevariety of applications while reducingadoption risk. These applications includemulti-MHz synchronous buck converters,Class D amplifiers for audio, and 48 V toPOL converters for data communicationsand telecommunications servers. GaNFET power stage devices providesignificant efficiency benefits across awide load range while improvingswitching frequency and power density.

LiteratureTexas Instruments Enters GaN Power

Market with 80-V Halfbridge(www.power-mag.com/news.detail.php?STARTR=10&NID=224)

TI White Paper: GaN FET moduleperformance advantage over silicon

RIGHT Figure 5: LMG5200 vs Si at differentfrequencies

LEFT Figure 6: Calculated efficiency comparisonbetween the GaN FET power stage design at 1MHz and Si FET design at 800 kHz

To receive your own copy of

Power Electronics Europe subscribe today at:

www.power-mag.com


www.ti.com/GaN POWER GaN 27


Texas Instruments (TI) introduced on March 13 a 80-V /10-A integrated GaN FET power-stage prototype, whichconsists of a high-frequency driver and two GaN FETs ina half-bridge configuration – all in a quad flat no-leads(QFN) package. TI does not introduce a GaN switch –instead the company relies on Enhancement-Mode GaNswitches from Efficient Power Conversion (www.epc-co.com) and its already supplied GaN drivers.According to TI Enhancement-Mode GaN power FETs

can provide significant power density benefits overSilicon MOSFETs in power converters but pose newchallenges for designers. TI solves the challenges ofdriving GaN power FETs with a family of drivers –UCC27611, a 4 A/6 A high-speed, optimized single gatedriver, LM5114, a 7.6 A single low-side driver withindependent source and sink outputs – and the LM5113,a 100 V integrated half-bridge driver for GaN power FETs.Compared to discrete implementations, these driversprovide significant PCB area savings to achieve highpower density and efficiency while simplifying the taskof driving GaN FETs reliably.The new LMG5200 GaN FET power stage will help

accelerate market adoption of GaN power-conversionsolutions that provide increased power density andefficiency in space-constrained, high-frequencyindustrial and telecom applications. Typically, designers who use GaN FETs that switch at

high frequencies must be careful with board layout toavoid ringing and electromagnetic interference (EMI).The dual 80-V power stage prototype eases this issuewhile increasing power-stage efficiency by reducingpackaging parasitic inductance in the critical gate-driveloop. The LMG5200 features multichip packaging and is

optimized to support power-conversion topologies withswitching frequencies up to 5 MHz.Also the 6-mm x 8-mm QFN package requires no

underfill, which significantly simplifies manufacturing.The reduced footprint solidifies the value of GaNtechnology and will help increase adoption of GaNpower designs in many new applications, ranging fromhigh-frequency wireless charging applications to 48-Vtelecom and industrial designs.For quick evaluation the LMG5200 EVM board is a

small easy to use power stage with an external PWMsignal. The EVM is suitable for evaluating theperformance of LMG5200 power stage in many differentDC/DC converter topologies. It can be used to estimatethe performance of LMG5200 to measure efficiency. Themodule is capable of delivering a maximum of 10 A ofcurrent however adequate thermal management (forcedair, running at low frequency etc) should be followed toensure that the temperature is not exceeded. The EVM isnot suitable for transient measurements as it is an openloop board. In addition to ordering the EVM, designerscan get started faster using PSpice and TINA-TI modelsfor the LMG5200 to simulate the performance andswitching frequency advantages of this technology.Prototype samples of the GaN power stage are availableto purchase in the TI Store. The LMG5200 is priced at $50each with a maximum purchase of 10 units. TheLMG5200 EVM is available for $299.

Texas Instruments EntersGaN Power Market with80-V Halfbridge

GaN FET power-stage consisting of a driver and two GaN FETs in a half-bridge configuration – all in a quad flat no-leads (QFN) package

The LMG5200 EVM board is a small easy to use power stage (buckconverter) with an external PWM signal


28 POWER GaN www.epc-co.com


Gallium Nitride TransistorsDrive Automotive ApplicationsEnhancement-mode gallium nitride transistors have been in production for over five years. As thetechnology has matured it has been adopted into a number of automotive applications such ascockpit wireless charging, LiDAR sensing, and EV charging with many more to follow. Alex Lidow,CEO Efficient Power Conversion Corporation, USA

Mobility has become a major theme forthe consumer during this century. Smartphones allow us to take our music, games,movies, television shows, contacts, and ourinternet with us at all times. Applicationssuch as Google Maps give us directions,tell us about traffic, and provide us withstreet and satellite images of ourdestination. Recently the automobileindustry has caught on to this trend andhas begun to show its vision of the futurefor the fully-mobile lifestyle. Thedashboard is being taken over by thesmartphone, the car is being taken over bysensors and computers to become semi,and eventually, fully autonomous. And,our cars are going semi, and eventuallyfully electric.

Power devices made with GalliumNitride are an integral part of every aspectof this mobility trend. These newgeneration power devices have alreadycarved out a significant position in the nextgeneration automobile.

Electric driveThe automotive industry is evolving fromvehicle propulsion that relies only on aninternal combustion engine, to hybridvehicles, plug-in hybrids, and, finally, fullyelectric cars. The demand for electricity

grows in proportion to the amount ofpropulsion handled by the electric motor.For example, the Tesla S delivers 416 hp,or 310 kW of electrical power to the rearwheels. Delivering that much powerrequires higher voltages in order to keepthe current levels flowing through themotor windings at a manageable level,with minimum conduction losses. Todaythe dominant transistor in electric or hybridvehicle propulsion systems is the insulatedgate bipolar transistor (IGBT) in voltagesranging from 500 V to 1200 V.

Wide bandgap (WBG) transistors madein either SiC or GaN technology hold greatpromise for this high power applicationbecause of their ability to block highervoltages with lower conduction lossescompared with Silicon transistors and,potentially, their ability to operate at muchhigher temperatures. Motor drives operateat frequencies between 17 kHz and 100kHz. The IGBT has a high saturationforward drop and stored charge, and thereverse conduction diode has a highstored charge. While the IGBT/ultrafastdiode combination outperforms the siliconMOSFET, both GaN and SiC transistorshave the capability to significantly increasethe efficiency of these motor drives.

Figure 1 gives a conceptual graph

showing the power levels and voltagelevels that are best served by differenttypes of transistors including IGBTs, GaNtransistors, and SiC transistors. Therequirements for electric drives sit right atthe interface between GaN, SiC and IGBTtechnologies. Ultimately, the cost andreliability of the system will determine thewinner of this application.

Wireless power transferWireless power transfer was firstdemonstrated over 100 years ago.However, only in this century have wedemonstrated safe, economic, convenient,and efficient wireless power transfertechniques. The latest techniques enablewireless charging of multiple objects withina distance of several centimeters from thepower transmission unit (PTU) withefficiencies above 80 % (Figure 2).Wireless phone charging in a car isbecoming more critical as the smartphoneitself is becoming the information receiverand router for the dashboard infotainmentcenter. Several automotive manufacturersare adopting operating system standardsthat enable seamless Android or iOSinterfaces to dashboards that becomeslaves to the information andentertainment available in the smartphone.As a consequence, usage of wirelessnetwork data as well as the battery powerwill go up significantly.

Several automotive manufacturers arealso planning to embed wireless chargingstations in the center console of thevehicle so smartphone, as well as othermobile devices, can remain chargeddespite intense and continuous usagewhile the automobile is in operation.Given that the reference (Rezence)standard uses a 6.78 MHz standardfrequency for power transmission, GaN isthe heavy favorite for adoption over theslower and less efficient silicon power

Figure 1: Current and voltage ranges wherevarious power semiconductor technologies arethe most likely to be applied

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MOSFET in these applications. Wireless charging for electric vehicles is

also becoming more available as fully-electric cars become more prolific.Whereas there is no universal standard yet,loosely coupled magnetic energy transfer,similar to the method used in the Rezencestandard is common to allimplementations due to its ability totransfer power without precise alignmentof transmitter and receiver units. GaN iscertainly a good candidate technology forthis application as well.

Autonomous controlIt is critical that a car know what is aroundit at all times in order to prevent collisions.The higher the speed of the vehicle, thefaster the system needs to sense, and themore precisely it needs to interpret the

distance to the potential collision. Todayautomotive manufacturers use a variety ofsensors in these functions, includingultrasonic sensing, microwave radar, shortrange radar, and video pattern recognition.Light Distancing and Ranging (LiDAR)sensors have only recently begun toemerge in automotive sensing applications.Initially LiDAR sensors were used togenerate digital maps used for mappingand navigation software. Because LiDARchases the speed of light for resolution,eGaN FETs, with about a 10 timesadvantage in switching speed over Silicon,have been used almost exclusively inthese mobile applications.

The imaging speed and depth resolutionhas become so good with eGaN FETs thatmanufacturers experimenting withautonomous vehicles are using these

same types of LiDAR sensors used formapping for their driverless navigationsystems. In addition, several automakersare incorporating eGaN FET-based LiDARsensors in their vehicles for generalcollision avoidance and blind spotdetection.

ConclusionsThe around 70 million annuallymanufactured cars presents a hugepotential market for any technology thatcan improve the customers’ automotiveexperience. Infotainment mobility throughwireless charging and autonomousvehicles enabled by LiDAR sensors are twoareas that will infiltrate the automotiveworld over the next few years. Both ofthese applications rely on the higher speedand low cost of GaN transistors. In thefuture, as electric vehicles become moreubiquitous, motor controls might alsobecome an enormous market for GaNtransistors, depending upon the coststructure of higher voltage GaN transistorscompared with today’s IGBTs ortomorrow’s SiC transistors.

LiteratureLidow, A: “Enhancement-Mode

Gallium Nitride Transistors inAutomotive Applications”, PCIM Europe2015, Special Session “Power GaN inAutomotive Applications”

EPC has designed the EPC2105, a 80-V enhancement-modemonolithic GaN transistor half bridge. By integrating twoeGaN power FETs into a single device, interconnectinductances and the interstitial space needed on the PCBare eliminated. This increases both efficiency (especially athigher frequencies) and power density, while reducing

assembly costs to the end user’s power conversion system.The EPC2105 is intended for high frequency DC/DCconversion and enables efficient single stage conversionfrom 48 V directly to 1 V system loads.

Each device within the EPC2105 half-bridge componenthas a voltage rating of 80 V. The upper FET has a typicalRDS(on) of 10 m, and the lower FET has a typical RDS(on) of 2.3 m. The high-side FET is approximately one-fourth thesize of the low-side device to optimize efficient DC/DCconversion in buck converters with a high VIN/VOUT ratio. TheEPC2105 comes in a chip-scale package for improvedswitching speed and thermal performance, and is only 6.05 mm x 2.3 mm for increased power density.

The EPC9041 development board (2” x 1.5”) contains oneintegrated half-bridge component using the TI LM5113 gatedriver, supply and bypass capacitors. The board has beenlaid out for optimal switching performance and there arevarious probe points to facilitate simple waveformmeasurement and efficiency calculation.

First EPC 80-V enhancement-mode monolithic GaN transistor half bridge

Monolithic Gallium Nitride Half Bridge

Figure 2: Wireless power transfer will be usedin automobiles to keep smartphones chargeddespite continuous usage as part of theinfotainment system

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Progress of GaN TransistorsOver the last several years, GaN semiconductors have emerged as a leading technology enabler forthe next wave of compact, energy-efficient power conversion systems – ranging from ultra-smalladapters, high-power-density PCs, server and telecom power supplies, to highly efficient PVinverters and motion control systems. Continuous progress has been made since the JEDECqualification of Transphorm’s 600 V-rated GaN-on-Si devices in 2013. Systematic voltage-accelerated off-state stress tests and temperature-accelerated on-state stress tests reveal an intrinsicMean Time to Failure (MTTF) of 8x107 and 3x107 hours at the rated voltage and ratedtemperature respectively. Yifeng Wu, Sr. VP Engineering, Transphorm Inc., Goleta, USA

The TPH3205WS is a first 600V GaN(Gallium Nitride) transistor in a TO-247package. Offering 63 m on-resistanceand 34 A current rating, the device utilizesthe source-tab connection design, whichreduces EMI at high dv/dt to enable lowswitching loss and high-speed operation inpower supply and inverter applications. Analready demonstrated 2.4kW, bridgelesstotem-pole PFC design exhibits near 99 %PFC efficiency at 100 kHz operation. Thetotem-pole PFC, when combined with aGaN-based DC/DC conversion stage,enables a simplified 80 PLUS titaniumpower supply design providing powerdensities unachievable with Si-baseddevices. A static demo of the TPH3205WSused in a 3 kW inverter shows a peakefficiency of 98.8 % at 100 kHz and over99 % at 50 kHz switching frequency.

Automotive applications with GaNThere has been also strong interest indeveloping GaN power devices forautomotive applications due to thephysical arguments of their potential

benefits for next generation vehicles.However, most previous reports havebeen consumed with discussion of devicestructures, characteristics and challengesin achieving reliability. In passing JEDECqualification of 600-V rated GaNtransistors, reliability can now be assessedto justify GaN’s suitability for the stringentautomotive applications. Although it willtake more time to develop maturemanufacturing of high current GaNdevices for the main motor drive in anElectric Vehicle (EV), it is now attractive toemploy present GaN switch products forauxiliary power blocks up to 6 kW. Present 600V GaN switch products are

well suited to auxiliary power convertersdue to the improved figure of merit overSi devices and the special ability toperform all the functions of a MOSFET oran IGBT plus a freewheel diode. This isespecially attractive for on-board chargersin an EV to deliver bi-directional powerflow, which not only serve as a chargerbut can provide electricity from the EVbattery to a camping ground or to one’s

home in a power outage. A uniquetopology as shown in Figure 1 can becontrolled to be a bridge-less PFC withvery high efficiency. The same circuit canalso be controlled to reverse the powerflow to function as a DC/AC inverter. Aperformance evaluation was carried outusing a half bridge by two 600-V-ratedGaN HEMT switches in TO247 with on-resistance of 50 m. These devices arecapable of >3.3 kW output power andtwo interleaved phases can provide >6.6kW.The half bridge circuit was first

configured as a boost converter driven insynchronous rectification with resultshown in Figure 2. The boost ratio is 240V:400 V and the PWM varies from 100 to300 kHz. The inductor was made of aKoolmu core with L=268 µH and wire DCresistance of 20 m, sized for continuouscurrent mode in most of the operationrange. The input and output storagecapacitors are 15 µF and 5 µF respectively.The heat sink and thermal insulatorassembly were tested to have an ambient-

Figure 1: A Totem-pole circuit which can becontrolled as either an AC/DC PFC or a DC/ACinverter for reverse current flow. Q1 & Q2 arefast GaN devices (operating at 100-300 kHz) andS1 and S2 are Si MOSFETs (operating at 50-120Hz). This design can be an efficient front end ofa bi-directional on-board EV battery charger

Transphorm_feature (2)_Layout 1 23/04/2015 12:13

www.transphormusa.com POWER GaN 33


to-case thermal resistance of 2.7 K/W foreach device, while the junction-to-casethermal resistance of each packageddevice is 1 K/W. All circuit losses areincluded in the performance plot andeach data point was captured afterthermal equilibrium in an air ambient of25°C. As already mentioned above theconverter delivers >3.3 kW output powerwith a peak efficiency >99 % at 100 kHzand >98 % at 300 kHz respectively. Thishigh level of performance is not possiblewith Si devices at such high PWMfrequencies, which is key to a compactcircuit and system design.With the data available at various

inductor current levels and frequencies, aswell as the magnetic losses of theinductor at corresponding frequencies andvoltage excitations tested in a separatefixture, the switching losses as a functionof current is then extracted as seen inFigure 3. This together with the thermalcharacteristics of the device and the heat-sink assembly allows the construction of asimulation model to predict performanceincluding loss breakdown and junctiontemperature as a function of power andfrequency. The modeling result is verifiedin Figure 4 with almost identical overlapsof experimental data.At 100 kHz, the high device efficiency

well above 99 % up to full load translatesto a total device dissipation of only 28 Wat the output power of 3.4 kW, resultingin a junction temperature of 76°C. It isdevice physics that switching lossesincrease at higher frequencies for anysemiconductor. The merit of GaN is toextend that to a much higher frequencywhile maintaining a reasonably low lossto prevent overheating. The GaN halfbridge has no issue operating at 3.4 kWand 300 kHz with a junction temperature140°C, well below the 175°Cspecification limit. Compared to traditionalSi devices at 12-50 kHz, the GaNtransistors open up a large design space

Figure 2: Experimental test result of a halfbridge operating as a boost converter using two50 m?, 600-V rated GaN HEMTs in TO247packages. The devices are driven in sync-recmode at boost ratio 240 V:400 V achieving peakefficiency >99 % at 100 kHz and >98 % at 300kHz, respectively

Figure 3: Switching loss (including turn-on andturn-off) as a function of current at 400 V for the600-V, 50 m? GaN half bridge converter


34 POWER GaN www.transphormusa.com


for designers striving for compact powercircuits.

GaN and coolingThere is a strong interest with EV makersto consolidate all cooling systems in avehicle into an integrated one, where thefluid temperature could be as high as105°C. The same sim7ulation model isapplied to such a case assuming aconservative case-to-fluid thermalresistance of 1.5 K/W for each devicepackage (a total of 2.5 K/W from junctionto fluid). The inductor was assumed tohave a magnetic loss of 3 W and a DCresistance of 20 m which can be madesmall at high frequencies. Input andoutput passives were assumed to have 10m series resistances respectively. Thetest results using PWM frequencies 50,100 and 200 kHz show that even in sucha stringent situation the GaN half bridge iscomfortable operating at 50 kHz and 100kHz, with a maximum junctiontemperature of 140°C and 150°Crespectively, well under the 175°C limit. At200 kHz, full load junction rises to 165°Cwith a headroom of 10 K. This resultsshow great promise for such applicationsalthough actual tests need to perform forin-system validation.

ConclusionsGaN high voltage devices turned a newleaf after the first product qualification in2013 and have now shown systematicintrinsic reliability data that aligns toautomotive applications. An analysis basedon experimentally validated modelindicated outstanding performance for theGaN bridge topology in compact on-boardbi-directional EV chargers operating atmuch higher PWM frequencies than thatof typical Si-based circuits, even atelevated coolant temperatures up to105°C. Although to achieve and tomaintain mature manufacturing similar totoday’s Si still require investment andtime, there is little doubt that these newpower devices will help open up a newdesign space for attractive future productsin this industry.

LiteratureWu, Y: “Progress of GaN Transistors

for Automotive Applications”, PCIMEurope 2015, Special Session “PowerGaN in Automotive Applications”

Figure 4: Modeled result of the GaN half bridgeconverter with experimental data in greendiamonds to confirm validity. PWM frequencieswere 100, 200 and 300 kHz, respectively. Theheat-sink thermal resistance from package toambient is 2.7 K/W for each device and ambienttemperature 24°C


DFA Media Ltd • 192 The High Street • Tonbridge • Kent • TN9 1BE • UK • tel: +44 1732 370340 • e: [email protected]

The UK’s leading exhibition for Drives, Automation, Power Transmission and Motion Control Equipment

Drives & ControlsExhibition & Conference 2016

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36 DC/DC CONVERTER www.murata.com


DC/DC Converter ModulesReplace Discrete DesignsThe decision to ‘make or buy’ a DC-DC converter has never been straightforward with many factors toconsider. More low power applications can now be satisfied with new generations of low cost modules.Paul Lee, Director of Business Development, Murata Power Solutions, UK

Your new product design requires aprocessor, so do you design one and thenfind board space for two billion transistors?Would you buy a 100 mW resistor in anSOIC-8 package? Frivolous examples butthey illustrate the extremes where thedecision to buy a module or achieve afunction with discrete components is easy.For DC/DC converters, the decision isoften quite difficult with their particularcombination of size, dissipation, isolation,EMC and electrical performancespecifications.The argument for buying is easier at

higher power levels: ‘state of the art’ busconverters for distributed powerapplications can achieve 600 W output ina quarter brick format utilizing a 14 layerboard in heavy copper. This would behugely difficult to implement discretely in amotherboard for the same performance. Atlower powers such as 1 W there is a verylarge market for simple isolated converterswhich typically power isolated datainterfaces or generate low power ‘spot’voltages for analogue circuitry such as -5 V

for an op-amp rail (Figure 1). Today, theseconverters can be bought as surface-mount or through-hole modules fromreputable sources for about $2 in volume.However, many users feel that in volumethey can design and implement theconverter themselves from basic theoryand device application notes at lower totalcost.Of course the cost comparison is not

simply between the bought-in module andthe BOM cost of the discrete design.Taking an example of a 1 W isolatedconverter which could be implementedwith ten discrete components, other directcost factors include theplacement/inspection cost of tencomponents versus one, purchasingoverhead for ten components fromperhaps five manufacturers, includingspecialist magnetics, versus one modulesupplier and the storeshandling/inspection/stocking/pickingoverhead for perhaps eight differentcomponent types including specialistmagnetics versus one module.

The costs of testing functionality andisolation would also need to be included.Then you would need to consider theindirect extra costs. These would includethe cost to board area – a discrete designis unlikely to be smaller, cost to skyline - asurface mount module with embeddedmagnetics can be very low profile and thespecialist power circuit design, productqualification and overhead. There are anumber of other indirect costs such asPCB design and overhead, design supportcost, ongoing certification and inspectioncosts if agency approved and the costsassociated with multiple suppliermonitoring, QA and control.If the transformer and other magnetic

components are also designed andmanufactured ‘in-house’ then all the aboveconsiderations apply again for these partswith would include multiple wire types andgauges, insulation, hardware and cores.The transformer in the above examplewould typically have a minimum of sixwindings with wire down to 0.07 mmgauge on a core of 4 mm diameter

Figure 1: Typical applications for isolated DC/DC converters

Murata_feature_Layout 1 23/04/2015 12:27

www.murata.com DC/DC CONVERTER 37


requiring specialist techniques andequipment to wind. Of course, if available,the magnetic part could be bought in, butcould be as expensive as a completeDC/DC module.

Circuit and magnetics design are nottrivial despite, and perhaps because of, theminimal component count. The examplegiven of a 1 W converter is a self-oscillating push-pull circuit which relies oncareful selection of transistor gains andbiasing along with deliberate cyclicsaturation of the transformer ferrite coreoperating outside of its normal data sheetparameters. To be viable, the completeddesign must have high efficiency with lownoise on inputs and outputs whilemaintaining reliable isolation, accurateoutput across its load range and even witha degree of overload protection. A lot toget right with just 10 discrete components!

Speed to achieve a solution is a factorwith even a simple converter requiringmany weeks of design, documentation andqualification over all prospective operatingand environmental conditions. If theconverter forms any sort of safety barrier,the costs and time to achieve agencyrating are measured in thousands ofdollars and months with ongoing costs forinspections and re-certifications.

All of these costs and associatedoverheads and delays need to becompared with the simplicity of purchasinga proven, reliable module and also savingthe ‘opportunity cost’, the value of the timethat could be used elsewhere in corebusiness and the value of a quicker time tomarket and earlier sales.

There may be some volume at which

your company can afford to become aDC/DC converter manufacturer,keep the design in-houseand write off the designcosts. However, new 1 Wconverter module designsare pushing out themake/buy volumecrossover point. At muchlower costs than equivalent olderproducts and with performanceadvantages, the differential betweenmake and buy may now be down to afew cents, if anything, perhaps movingthe crossover point out by fivefold ormore.

To put some figures into an example,let’s say that the total time taken toimplement a discrete design is eightman-weeks. This would include time fora design engineer, support technicians,drawing office, production engineer,component engineer, qualificationengineer, EMC engineer, managementand probably more functions. If theaverage burdened employment cost ofthese staff is $50/hour then the one-offcost is about $15,500. Add prototypingmaterials, tooling, external agency costsand disposables, this figure could easilyapproach $20,000. If the direct cost of adiscrete design is $1, comprising BOM,placement, component sourcing,handling, test and ongoing designsupport, then the gain over buying a $2bought-in DC-DC converter pays off thedesign costs after building about 20,000units. If the bought part is now closer to$1.30, the pay-off quantity is close to70,000 units. An unexpected further cost

of 15 cents in thediscrete design doubles the

payback quantity again. This is all withoutfactoring in the value of opportunity cost,quicker time to market and convenienceof a warranted ‘fit and forget’ module(Figure 2)

.Latest low cost products on themarket also offer significant performanceimprovements over previous generations.An example is the NXE series having theadditional advantage of patent-pendingembedded magnetics giving completelyrepeatable performance and lower profilethan typical discrete parts. The NXE withproprietary ‘inspectable land grid array’(iLGA) package is also pin-compatiblewith the 1 W industry standard footprintenabling existing users of DC/DCconverter modules to upgrade andrealize the benefits as well.

Perhaps the ‘make or buy’ decision isnow a little easier at lower powers andthe day is closer when product designerswould no more design DC/DC convertersdiscretely than they would a logic gate orop-amp.

Figure 2: Example ofcrossover pointsmake or buy forDC/DC converters

Figure 3: CompactNXE1 DC/DC converter

Murata_feature_Layout 1 23/04/2015 12:27

38 PRODUCT UPDATE

GE’s Critical Powerbusiness hasexpanded itsHammerheadseries of DC/DCmodules with 228 W quarter-brick QHHD019A0B isolated converters. Thelow-height modules provide a single, regulated output voltage over a wideinput voltage range of 18-75 V DC. In terms of output voltage, Hammerheadconverters provide a nominal 12 V output voltage that is rated for 19 A outputcurrent. The new modules achieve typical full-load efficiencies of greater than93 % at input voltages of 24 and 48 V. Standard features include remoteon/off, remote sense, output-voltage adjustment and over-voltage, over-current and over-temperature protection. In addition, an optional heat plate isavailable, which allows for an external, standard, quarter-brick heat sinkattachmentóenabling designers to achieve higher output currents in high-temperature applications. With the addition of the new 228-W QHHD DC-DCconverters to its family of Hammerhead products - which include EHHD,KHHD and SHHD modules, GE can provide board designers with convertersfrom 15 W in a 1-by-1-inch module to 228 W in a DOSA-standard quarterbrick unit.

www.gecriticalpower.com

New BookSemiconductorPower DevicesSemiconductor power devices arethe heart of power electronics. Theydetermine the performance ofpower converters and allowtopologies with high efficiency.Semiconductor properties, pn-junctions and the physicalphenomena for understandingpower devices are discussed indepth. Working principles of state-of-the-art power diodes, thyristors,MOSFETs and IGBTs are explained in detail, as well as key aspects ofsemiconductor device production technology. In practice, not only thesemiconductor, but also the thermal and mechanical properties ofpackaging and interconnection technologies are essential to predict devicebehavior in circuits. Wear and aging mechanisms are identified andreliability analyzes principles are developed. Unique information ondestructive mechanisms, including typical failure pictures, allowsassessment of the ruggedness of power devices. Also parasitic effects, suchas device induced electromagnetic interference problems, are diccussed. The book addresses also power device function, thermal behavior of

devices and packages, reliability. The treatment of semiconductor physicsdiffers from other textbooks. “What might be called the German method oftaking into account emitter recombination and behavior of the middleregion is employed in the analysis of diode forward I-V characteristics”(review Phil Hower, TI) however, is essential for the function of modernpower devices (emitter engineering).

www.springer.com/gp/book/9783642111242

UK-based Knowles/Novacap offers now gold plated terminations.Conventional termination is normally tin/lead, but lead has been banned bythe RoHS directive. However, pure tin-plated terminations allow tin whiskers togrow from surfaces and can cause electrical short-circuits and failures. To help

eliminate this problemof tin ‘whiskering’Novacap hasdeveloped a gold flashtermination forconductive epoxy orgold/indium solderattachment. Tinwhiskers aremicroscopic single-crystal metal fibers,thinner than a human

hair, capable of bridging great distances between leads on electroniccomponents, and creating short-circuits and failures. They are caused bydeposit stress, such as heat, to pure tin plated components and are almostinvisible to the eye, needing magnification and special lighting to be seen.However, failures that they can cause represent a clear and present dangerespecially to Hi-Rel applications such as medical implantable devices andmilitary equipment. Novacap’s gold termination consists of a 5 micro-inchminimum gold flash over a nickel barrier and is defined by the use of a “NG”in the part number ordering code. It can be specified for both their PME andHigh Capacitance BME product lines. But other “hard to find” terminations,such as tin/lead (desired for many military applications) can still be specified.

www.knowlescapacitors.com

Ring-Shaped Power Capacitors for E-Mobility

TDK Corporation presents the EPCOS RingCap – a power capacitor with aninnovative design that is especially suitable for xEV applications. Thanks to its ringconfiguration, the new RingCap can be integrated into a clutch bell housing orwheel hub motors. The dimensions of the capacitor can be adapted according tothe specific requirements of the customer: The outer diameter may be up to315 mm, while its width is no more than 50 mm. The EPCOS RingCap isdesigned for rated voltages of between 100 V DC and 900 V DC and offerscapacitance values of between 100 µF and 2000 µF. Apart from the mainwinding, Y-capacitors with separate terminals can additionally be integrated in thewinding. A special heat-treatment under vacuum increases long-term stability ofthe capacitor. In the standard version with dielectric made of polypropylene (PP)or polyethylene terephthalate (PET), the capacitor is suitable for a temperaturerange between -40 °C and +105 °C. With a dielectric made of polyethylenenaphthalate (PEN), it can even handle temperatures of up to +150 °C. Due tothe low equivalent series inductance (ESL) values ranging from less than 10 nHup to 30 nH, no unwanted over-voltages occur in the DC link circuit during high-speed switching operations. For better protection against environmental effects,the capacitor is also available with a resin-filled housing.

http://en.tdk.eu Gold Plated Terminations for MLCs

Highly Efficient 228 W DC/DC Modules


Hyd H/B Pne H/B Ind Mot CompH

4-6 copies: £4.99 7 or more copies: £6.99

Product Pages_0315_Layout 1 23/04/2015 12:34

PRODUCT UPDATE 39


Motion Module Combines Co-Processor with Motion SensorsMicrochip announced the MM7150 Motion Module which combines SSC7150 motion co-processor with 9-axis sensors, including accelerometer, magnetometer and gyroscope in asmall form factor. With a simple I?C™ connection to most MCUs/MPUs, embedded/IoT

applications can easily tap intothe module’s advancedmotion and position data. TheSSC7150 motion co-processor is pre-programmedwith sophisticated sensorfusion algorithms whichintelligently filter, compensateand combine the raw sensordata to provide accurateposition and orientationinformation. The small formfactor module is self-calibrating during operationutilizing data from the pre-

populated sensors: the Bosch BMC150 6-axis digital compass; and the BMG160 3-axisgyroscope. The MM7150 motion module is single-sided to be easily soldered down duringthe manufacturing process. Developing motion applications for a variety of products madeeasy using the MM7150 PICtail™ Plus Daughter Board. The MM7150 Motion Module is wellsuited for a wide range of embedded applications such as portable devices and robotics;industrial applications such as commercial trucks, industrial automation, patient tracking, smartfarming, and consumer electronics.

www.microchip.com/MM7150-Page-022415a

The VRH320 Variable Wire Wound Resistor available from UK-based ARCOL Resistors has a wide range of applications forvoltage and current adjustment including industrial machineryRPM adjustment, instruments, automated control installations,load simulation and educational modelling. The VRH320 hasbeen ergonomically designed to enable simple and accurateadjustments by use of its top mounted slider. It isencapsulated in an IP20 rated lacquered metal casing whichhas dimensions of 446 mm x 93 mm x 160 mm. There aresix resistance values available in this range encompassing 10 to 10 k. Key specifications of the VRH320 include a320 VA continual loading with a 640 VA overload capabilityfor a period of 15 min. As with all ARCOL products theVRH320 is RoHS compliant.

www.arcolresistors.com

Variable WireWound Resistor

ES LIVE 201514 May • Madejski Stadium • Reading

Looking for Power Components?

The FREE one day networking event, open 10.00am - 4.00pmFor more information please contact us:T: 01892 613400 • E: [email protected] • www.es-live.co.uk

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Infineon ihas announced a family of robust 650V IGBTs that can deliver highestefficiency in fast switching automotive applications. The AEC-Q-qualified IGBTscan reduce power losses and improve reliability EV and HEV applications suchas on-board charging, power factor correction (PFC), DC/DC and DC/ACconversion. The new IGBTs have a blocking voltage 50 V higher than previousautomotive IGBTs and achieve their ‘best-in-class’ efficiency ratings due toTRENCHSTOP 5 thin wafer technology. Compared withexisting ‘state-of-the-art’ technologies, this technologyreduces saturation voltage by 200 mV, halvesswitching losses, and lowers gate charge by a factorof 2.5. Improved switching and conduction lossesalso support lower junction and casetemperatures than alternative technologies,leading to enhanced device reliability andminimizing the need for cooling. Theperformance of the new devices allows alsoentering MOSFET dominated applicationsand offering designers a wider spectrumof suitable semiconductor basetechnologies. Featuring current ratingsof 40 A or 50 A, TRENCHSTOP 5AUTO IGBTs are available as singlediscrete IGBT device or co-packaged with a fast“Rapid” Silicon diode. In each case the two variants H5 HighSpeed and F5HighSpeed FAST can be supplied depending on whether optimized switchingspeed or highest possible efficiency is the overriding design criteria.

For a typical PFC used in on-board chargers the replacement of current ‘state-of-the-art’ technologies by TRENCHSTOP 5 AUTO IGBTs can lead to anefficiency increase from 97.5 % to 97.9 %. In the case of a 3.3 kW charger thisequates to a power loss reduction of 13 W. Assuming a charging time of fivehours, this would be equivalent to reducing CO2 emissions by 30 g in a singlecharging cycle.

www.infineon.com/discrete-automotive-igbt

40 PRODUCT UPDATE


Integrated High-SpeedGate Driver/MOSFETRF ModulesIXYS introduced its IXZ631 Series CMOS high-speed, high-currentintegrated gate driver and MOSFET modules by its Colorado division.The modules are specifically designed for Class D, E, HF and RFapplications at up to 27 MHz, as well as other applications requiringhigh-speed, high-power switching. The IXZ631 modules feature theIXRFD630 high speed gate driver paired with an RF power MOSFET,packaged in low-inductance surface mount RF package incorporatinglayout techniques to minimize stray lead inductance. Designed withsmall internal delays, the modules are suitable for high poweroperation where combiners are used. Two devices are available, theIXZ631DF12N100 1,000 V/12 A device and the 500 V/18 AIXZ631DF18N50. Both modules feature voltage rise and fall times ofless than 5 ns, and minimum pulse widths of 8 nanoseconds. Inpulsed mode the 500 V module provides up to 95 A of peak current;the 1,000 V module 72 A.

www.ixyscolorado.com

Richardson RFPD now offers the 1.2 kV, 13 mΩ all-SiC half-bridge modulefrom Cree. The CAS120M12BM2 includes C2M MOSFETs and Z-Rec diodesand features ultra-low loss, high-frequency operation, zero reverse recoverycurrent from the diodes, zero turn-off tail current from the MOSFETs, fail-safeoperation, ease of paralleling, and a copper baseplate and aluminum nitrideinsulator. It is available in an industry-standard 62 mm x 106 mm x 30 mmhousing. The new module enables compact and lightweight systems, offershigh efficiency operation, mitigates over-voltage protection, and facilitatesreduced thermal requirements and system cost.The CAS120M12BM2 issuited for a range of applications, including induction heating, solar and windinverters, DC/DC converters, line regeneration drives, and battery chargers.According to Cree, additional key features include total switching energy (ESW)at 120 A/150°C of 2.1 mJ and on state resistance at 120 A is 13mΩ.

www.richardsonrfpd.com

Murata Power Solutions’ new OKDx-T/20-W12 and OKDx-T/25-W12 seriesPoL DC/DC converters offer high power density, PMBus compatible digitalpower solution for space constrained embedded applications such aspowering CPUs, datacom/telecom systems, distributed bus architectures(DBA), programmable logic, and mixed voltage systems in the networking,computing/servers, telecom, and industrial market sectors. The devices deliver20 A/66 W and 25 A/82.5 W output respectively, and measure 25.65 mm x13.8 mm x 8.2 mm. Offered in three different packages - through-hole, single-in-line and surface-mount - the converters can easily be configured andmonitored via the standard PMBus communication protocol. They acceptinput voltages from 4.5 V to 14 V and have an output voltage range of 0.6 Vto 3.3 V with a typical efficiency of 97.1% at 5 V input, 3.3 V output and 50 %load. The products are delivered with a default firmware configuration suitablefor a wide range of operation in terms of input voltage, output voltage, andload. Both series’ includes advanced features like non-linear transientresponse, phase spreading, synchronization, digital current sharing, andoptimized dead time control. Both series are compatible to the AMP standard(Architects of Modern Power, www.ampgroup.com).

www.murata.com

Digital 20/25 A POL DC/DC converters

650V IGBTs for (H)EVApplications

1.2 kV All-Silicon Carbide Half-Bridge Module


WEBSITE LOCATOR 41


AC/DC Connverters

www.irf.comInternational Rectifier Co. (GB) LtdTel: +44 (0)1737 227200

Diodes

Discrete Semiconductors

Drivers ICS

EMC/EMIwww.microsemi.comMicrosemiTel: 001 541 382 8028

Ferrites & Accessories

GTO/Triacs

Hall Current Sensors

IGBTs

DC/DC Connverters


www.power.ti.comTexas InstrumentsTel: +44 (0)1604 663399


www.neutronltd.co.ukNeutron LtdTel: +44 (0)1460 242200

Harmonic Filters

www.murata-europe.comMurata Electronics (UK) LtdTel: +44 (0)1252 811666

Direct Bonded Copper (DPC Substrates)

www.curamik.co.ukcuramik electronics GmbHTel: +49 9645 9222 0


www.mark5.comMark 5 LtdTel: +44 (0)2392 618616

www.dgseals.comdgseals.comTel: 001 972 931 8463

www.microsemi.comMicrosemiTel: 001 541 382 8028


www.digikey.com/europeDigi-KeyTel: +31 (0)53 484 9584


www.dextermag.comDexter Magnetic Technologies, Inc.Tel: 001 847 956 1140



www.protocol-power.comProtocol Power ProductsTel: +44 (0)1582 477737

Busbars

www.auxel.comAuxel FTGTel: + 33 3 20 62 95 20

Capacitors

Certification

www.psl-group.uk.comPSL Group UK Ltd.Tel +44 (0) 1582 676800

Connectors & Terminal Blocks

www.auxel.comAuxel FTGTel: +44 (0)7714 699967

www.productapprovals.co.ukProduct Approvals LtdTel: +44 (0)1588 620192

www.proton-electrotex.com/ Proton-Electrotex JSC/Tel: +7 4862 440642;

www.voltagemultipliers.com Voltage Multipliers, Inc.Tel: 001 559 651 1402


Arbitrary 4-Quadrant PowerSources

www.rohrer-muenchen.deRohrer GmbH Tel.: +49 (0)89 8970120



Website Locator(9)_p41-42 Website Locator 23/04/2015 14:54

42 WEBSITE LOCATOR


Power Modules

Power Protection Products

Power Semiconductors

Power Substrates

Resistors & Potentiometers

RF & Microwave TestEquipment.

Simulation Software

Thyristors

Smartpower Devices

Voltage References

Power ICs

Power Amplifiers

Switches & Relays

Switched Mode PowerSupplies

Switched Mode PowerSupplies

Thermal Management &Heatsinks

Thermal Management &Heatsinks




www.neutronltd.co.ukNeutron LtdTel: +44 (0)1460 242200

www.rubadue.comRubadue Wire Co., Inc.Tel. 001 970-351-6100








www.fujielectric-europe.comFuji Electric Europe GmbHTel: +49 (0)69-66902920




www.ar-europe.ieAR EuropeTel: 353-61-504300



www.universal-science.comUniversal Science LtdTel: +44 (0)1908 222211

www.power.ti.comTexas InstrummentsTel: +44 (0)1604 663399


www.dau-at.comDau GmbH & Co KGTel: +43 3143 23510

www.power.ti.comTexas InstrummentsTel: +44 (0)1604 663399


www.isabellenhuette.deIsabellenhütte Heusler GmbH KGTel: +49/(27 71) 9 34 2 82

ADVERTISERS INDEX

Mosfets

Magnetic Materials/Products

Line Simulation

Optoelectronic Devices

Packaging & Packaging Materials


www.biaspower.comBias Power, LLCTel: 001 847 215 2427www.digikey.com/europe

Digi-Key Tel: +31 (0)53 484 9584


www.digikey.com/europeDigi-Key Tel: +31 (0)53 484 9584




www.abl-heatsinks.co.ukABL Components LtdTel: +44 (0) 121 789 8686

www.hero-power.com Rohrer GmbH Tel.: +49 (0)89 8970120

www.rohrer-muenchen.deRohrer GmbHTel.: +49 (0)89 8970120


ABB ..............................................................................................................................................................................................4Cornell Dubilier........................................................................................................................................................................7CWIEME...................................................................................................................................................................................31DAU..............................................................................................................................................................................................5DFA Media ..............................................................................................................................................................................19Drives & Controls 2016.....................................................................................................................................................35ES Live 2015 .........................................................................................................................................................................39European Offshore Energy 2016 ..................................................................................................................................29Fuji Electric..............................................................................................................................................................................25Infineon...................................................................................................................................................................................IFC

International Rectifier ......................................................................................................................................................OBCLEM ...........................................................................................................................................................................................15LpS 2015 ................................................................................................................................................................................17Microchip ...................................................................................................................................................................................9PCIM 2015............................................................................................................................................................................IBCPower Electronics Measurements .................................................................................................................................19Powerex ...................................................................................................................................................................................20Semikron .................................................................................................................................................................................23The Bergquist Company....................................................................................................................................................13Toshiba.....................................................................................................................................................................................11




Website Locator(9)_p41-42 Website Locator 27/04/2015 10:18

Power meets electronics – Join the PCIM Europe!

Your market place for power electronics

International Exhibition and Conferencefor Power Electronics, Intelligent Motion,Renewable Energy and Energy ManagementNuremberg, 19 – 21 May 2015

More information at +49 711 [email protected] or pcim-europe.com

PCIM_2015_ANZ_E_210x297.indd 1 07.10.14 14:4943_pee_0315.indd 1 23/04/2015 12:06

StrongIRFET™ Rugged,Reliable MOSFETs

Specifications Features:• Ultra low RDS(on)

• High current capability

• Industrial qualified

• Broad portfolio offering

Applications:• DC Motors

• Inverters

• UPS

• Solar Inverter

• ORing or Hotswap

• Battery Packs

PackageBVDSS

(V)

ID@25°C

(A)

RDS(on) max@Vgs = 10V

(mΩ)

Qg@Vgs = 10V

(nC)Part Number

PQFN 5x6

25 100 0.95 56 IRFH8201TRPbF

25 100 1.05 52 IRFH8202TRPbF

30 100 1.1 58 IRFH8303TRPbF

30 100 1.3 50 IRFH8307TRPbF

40 100 1.4 134 IRFH7004TRPbF

40 85 2.4 92 IRFH7440TRPbF

40 85 3.3 65 IRFH7446TRPbF

DirectFET Med.Can

30 192 1.3 51 IRF8301MTRPbF

40 90 1.4 141 IRF7946TRPbF

60 114 3.6 120 IRF7580MTRPBF

D2-Pak

40 195 1.8 150 IRFS7437TRLPbF

40 120 2.8 90 IRFS7440TRLPbF

60 120 5.34 86 IRFS7540TRLPbF

D2-Pak 7pin40 195 1.5 150 IRFS7437TRL7PP

60 240 1.4 236 IRFS7530-7PP

D-Pak40 90 2.5 89 IRFR7440TRPbF

60 90 4 86 IRFR7540TRPbF

TO-220AB

40 195 1.3 300 IRFB7430PbF

40 195 1.6 216 IRFB7434PbF

40 195 2 150 IRFB7437PbF

40 120 2.5 90 IRFB7440PbF

40 118 3.3 62 IRFB7446PbF

60 195 2.0 274 IRFB7530PbF

TO-247 40 195 1.3 300 IRFP7430PbF

For more information call +49 (0) 6102 884 311or visit us at www.irf.com

12023AD_11746_StrongIRFET_fullpg_210x297mm.indd 1 12/03/2015 13:2244_pee_0315.indd 1 23/04/2015 11:51

POWER GaN Progress of GaN Transistors

Documents

Transcript of POWER GaN Progress of GaN Transistors