FQB33N10/FQI33N10 100V N-Channel MOSFET - Farnell ...FQB33N10 / FQI33N10 N-Channel MOSFET (Note 4)...

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Absolute Maximum Ratings TC = 25°C unless otherwise noted

Thermal Characteristics

Symbol Parameter FQB33N10 / FQI33N10 UnitVDSS Drain-Source Voltage 100 VID Drain Current - Continuous (TC = 25°C) 33 A

- Continuous (TC = 100°C) 23 AIDM Drain Current - Pulsed (Note 1) 132 AVGSS Gate-Source Voltage ±25 VEAS Single Pulsed Avalanche Energy (Note 2) 435 mJIAR Avalanche Current (Note 1) 33 AEAR Repetitive Avalanche Energy (Note 1) 12.7 mJdv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/nsPD Power Dissipation (TA = 25°C) * 3.75 W

Power Dissipation (TC = 25°C) 127 W- Derate above 25°C 0.85 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C

TLMaximum lead temperature for soldering purposes,1/8 from case for 5 seconds

300 °C

Symbol Parameter Typ Max UnitRθJC Thermal Resistance, Junction-to-Case -- 1.18 °CWRθJA Thermal Resistance, Junction-to-Ambient * -- 40 °CWRθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °CW* When mounted on the minimum pad size recommended (PCB Mount)

S

D

G D2-PAKFQB Series

I2-PAKFQI Series

G S

D

G SD

March 2013

FQB33N10 / FQI33N10N-Channel QFET MOSFET 100 V, 33 A, 52 mΩ

DescriptionThis N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Features• 33 A, 100 V, RDS(on) = 52 mΩ (Max) @VGS = 10 V,

ID = 16.5 A

• Low Gate Charge (Typ. 38 nC)

• Low Crss (Typ. 62 pF)

• 100% Avalanche Tested

• 175°C Maximum Junction Temperature Rating

FQB

33N10 / FQ

I33N10 N

-Channel M

OSFET

©2000 Fairchild Semiconductor CorporationFQB33N10 / FQI33N10 Rev. C0

www.fairchildsemi.com

FQB

33N10 / FQ

I33N10 N

-Channel M

OSFET

(Note 4)

(Note 4, 5)

(Note 4, 5)

(Note 4)

Electrical CharacteristicsTC = 25°C unless otherwise noted

Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 0.6mH, IAS = 33A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C3. ISD 33A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C4. Pulse Test : Pulse width 300µs, Duty cycle 2%5. Essentially independent of operating temperature

Symbol Parameter Test Conditions Min Typ Max Unit

Off CharacteristicsBVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 100 -- -- V∆BVDSS/ ∆TJ

Breakdown Voltage Temperature Coefficient

ID = 250 µA, Referenced to 25°C -- 0.11 -- V/°C

IDSS Zero Gate Voltage Drain CurrentVDS = 100 V, VGS = 0 V -- -- 1 µAVDS = 80 V, TC = 150°C -- -- 10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nAIGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA

On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 VRDS(on) Static Drain-Source

On-ResistanceVGS = 10 V, ID = 16.5 A -- 0.040 0.052 Ω

gFS Forward Transconductance VDS = 40 V, ID = 16.5 A -- 22 -- S

Dynamic CharacteristicsCiss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 1150 1500 pFCoss Output Capacitance -- 320 420 pFCrss Reverse Transfer Capacitance -- 62 80 pF

Switching Characteristics td(on) Turn-On Delay Time VDD = 50 V, ID = 33 A,

RG = 25 Ω

-- 15 40 nstr Turn-On Rise Time -- 195 400 nstd(off) Turn-Off Delay Time -- 80 170 nstf Turn-Off Fall Time -- 110 230 nsQg Total Gate Charge VDS = 80 V, ID = 33 A,

VGS = 10 V

-- 38 51 nCQgs Gate-Source Charge -- 7.5 -- nCQgd Gate-Drain Charge -- 18 -- nC

Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- 33 AISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 132 AVSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 33 A -- -- 1.5 Vtrr Reverse Recovery Time VGS = 0 V, IS = 33 A,

dIF / dt = 100 A/µs

-- 80 -- nsQrr Reverse Recovery Charge -- 0.22 -- µC



0 5 10 15 20 25 30 35 400

2

4

6

8

10

12

VDS

= 50VV

DS = 80V

Note : ID = 33AVG

S, G

ate-

Sour

ce V

olta

ge [V

]

QG, Total Gate Charge [nC]10-1 100 1010

500

1000

1500

2000

2500

3000Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + CgdCrss = Cgd

Notes :1. VGS = 0 V2. f = 1 MHz

Crss

Coss

Ciss

Capa

citan

ce [p

F]

VDS, Drain-Source Voltage [V]

0.2 0.4 0.6 0.8 1.0 1.2 1.4100

101

102

175 Notes :

1. VGS = 0V2. 250s Pulse Test

25I DR, R

ever

se D

rain

Curre

nt [A

]

VSD, Source-Drain voltage [V]

0 20 40 60 80 100 1200.00

0.05

0.10

0.15

0.20

VGS

= 20V

VGS = 10V

Note : TJ = 25

RD

S(O

N) [

],D

rain

-Sou

rce

On-

Res

ista

nce

ID, Drain Current [A]

2 4 6 8 10100

101

102

175

25

-55 Notes :

1. VDS = 40V2. 250s Pulse Test

I D, D

rain

Curre

nt [A

]

VGS, Gate-Source Voltage [V]10-1 100 101

100

101

102 VGSTop : 15.0 V

10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V

Bottom : 4.5 V

Notes :1. 250s Pulse Test2. TC = 25

I D, D

rain

Curre

nt [A

]


Typical Characteristics

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation vs. Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

FQB

33N10 / FQ

I33N10 N

-Channel M

OSFET



1 0 - 5 1 0 - 4 1 0 - 3 1 0 - 2 1 0 - 1 1 0 0 1 0 11 0 - 2

1 0 - 1

1 0 0

N o t e s : 1 . Z

J C( t ) = 1 . 1 8 /W M a x .

2 . D u t y F a c t o r , D = t1/t

2 3 . T

J M - T

C = P

D M * Z

J C( t )

s i n g l e p u l s e

D = 0 . 5

0 .0 2

0 .2

0 .0 5

0 .1

0 .0 1

Z J

C(t),

Th

erm

al

Re

sp

on

se

t 1 , S q u a r e W a v e P u ls e D u r a t i o n [ s e c ]

25 50 75 100 125 150 1750

5

10

15

20

25

30

35

I D, D

rain

Cur

rent

[A]

TC, Case Temperature []100 101 102

100

101

102

DC

10 ms

1 ms

100 µs

Operation in This Area is Limited by R DS(on)

Notes :

1. TC = 25 oC

2. TJ = 175 oC 3. Single Pulse

I D, D

rain

Cur

rent

[A]


-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes : 1. VGS = 10 V 2. ID = 16.5 A

RDS

(ON)

, (No

rmali

zed)

Drain

-Sou

rce

On-R

esist

ance

TJ, Junction Temperature [oC]-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

Notes : 1. VGS = 0 V 2. ID = 250 A

BVDS

S, (

Norm

alize

d)Dr

ain-S

ource

Bre

akdo

wn V

oltag

e

TJ, Junction Temperature [oC]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Currentvs. Case Temperature

Figure 7. Breakdown Voltage Variationvs. Temperature

Figure 8. On-Resistance Variationvs. Temperature

Figure 11. Transient Thermal Response Curve

t1

PDM

t2

FQB

33N10 / FQ

I33N10 N

-Channel M

OSFET



Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K

200nF12V

Same Typeas DUT

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K

200nF12V

Same Typeas DUT

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RG

VGS

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RG

VGS

EAS = L IAS2----

21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

L

I D

t p

EAS = L IAS2----

21EAS = L IAS

2----21----21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

LL

I DI D

t p

FQB

33N10 / FQ

I33N10 N

-Channel M

OSFET



Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

VDD

LI SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

VDD

LLI SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------D =Gate Pulse WidthGate Pulse Period

--------------------------

FQB

33N10 / FQ

I33N10 N

-Channel M

OSFET



Package Dimensions

D2 - PAK

Dimensions in Millimeters

FQB

33N10 / FQ

I33N10 N

-Channel M

OSFET



Package Dimensions (Continued)

I2 - PAK

Dimensions in Millimeters

FQB

33N10 / FQ

I33N10 N

-Channel M

OSFET





FQB

33N10 / FQ

I33N10 N

-Channel M

OSFET

TRADEMARKSThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used here in:1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety oreffectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

2Cool™AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®

Dual Cool™EcoSPARK®

EfficentMax™ESBC™

Fairchild®

Fairchild Semiconductor®FACT Quiet Series™FACT®

FAST®

FastvCore™FETBench™

FPS™F-PFS™FRFET®

Global Power ResourceSM

Green Bridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louder and Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™mWSaver™OptoHiT™OPTOLOGIC®

OPTOPLANAR®

PowerTrench®

PowerXS™Programmable Active Droop™QFET®

QS™Quiet Series™RapidConfigure™

Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®

STEALTH™SuperFET®

SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®

SyncFET™

Sync-Lock™®*

TinyBoost™TinyBuck™TinyCalc™TinyLogic®

TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC®

TriFault Detect™TRUECURRENT®*µSerDes™

UHC®

Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™

®

™

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

Rev. I64

®

FQB33N10/FQI33N10 100V N-Channel MOSFET - Farnell ...FQB33N10 / FQI33N10 N-Channel MOSFET (Note 4)...

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