fmax InP DHBTs in a refractory emitter and self-aligned ......1 1.0-THz f max InP DHBTs in a...
Transcript of fmax InP DHBTs in a refractory emitter and self-aligned ......1 1.0-THz f max InP DHBTs in a...
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1.0-THz fmax InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance
Vibhor Jain, Johann C. Rode, Han-Wei Chiang, Ashish Baraskar, Evan Lobisser, Brian J Thibeault, Mark RodwellECE Department, University of California, Santa Barbara, CA 93106-9560
Miguel UrteagaTeledyne Scientific & Imaging, Thousand Oaks, CA 91360
D Loubychev, A Snyder, Y Wu, J M Fastenau, W K LiuIQE Inc., 119 Technology Drive, Bethlehem, PA 18015
[email protected], 805-893-3273
Device Research Conference 2011
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Outline
• Need for high speed HBTs
• Fabrication
– Challenges
– Process Development
• DHBT
– Epitaxial Design
– Results
• Summary
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0
5
10
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35
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109
1010
1011
1012
Tra
nsis
tor
Po
wer
Ga
in (
dB
)
Freq (Hz)
Why THz Transistors?
High gain at microwave frequencies precision analog design, high resolution ADC & DAC, high performance receivers
THz amplifiers for imaging, sensing, communications
Digital Logic for Optical fiber circuits
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HBT process requirements
• Refractory emitter contact and metal stack
– To sustain high current density operation
• Low stress emitters
– For high yield
• Low base access resistance
– For improved device fmax
• Thin emitter semiconductor
– To enable a wet etched emitter process for reliability and scalability
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Fabrication Challenges – Stable refractory emitters
Emitter yield drops during base contact, subsequent lift-off steps
High stress in emitter metal stack
Poor metal adhesion to InGaAs
Need for low stress, high yield emitters
Fallen emitters
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Fabrication Challenges – Base-Emitter Short
Undercut in thick emitter semiconductor
Helps in Self Aligned Base Liftoff
For controlled semiconductor undercut
Thin semiconductor
To prevent base – emitter short
Vertical emitter profile and line of sight metal deposition
Shadowing effect due to high emitter aspect ratio
Slow etch plane
InP Wet Etch
Fast etch plane
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Fabrication Challenges – Base Access Resistance
contacts
contact
gapsh,bcsh,esh,2612 AL
W
L
W
L
WR
e
gap
e
bc
e
e
bb
We
Wgap
Wbc
bcsh,esh,gapsh,,
• Surface Depletion
• Process Damage
Need for very small Wgap
• Small undercut in InP emitter
• Self-aligned base contact
cbbbCR
ff
8max
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Composite Emitter Metal Stack
TiW
W
• W/TiW metal stack
• Low stress
• Refractory metal emitters
• Vertical dry etch profile
W emitter
Erik Lind
Evan LobisserTiW emitter
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TiW
W
Base
Metal
BCB
SiNx
100nm
Vertical etch profile
Low stress
High emitter yield
Scalable emitter process
Vertical EmitterFIB/TEM by E Lobisser
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InGaAs capMo contact
InP emitter
Dual SiN
sidewall
Controlled
InP undercut
Narrow BE gap50nm
Narrow Emitter UndercutFIB/TEM by E Lobisser
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Epitaxial Design
T(nm) Material Doping (cm-3) Description
10 In0.53Ga0.47As 81019 : Si Emitter Cap
20 InP 51019 : Si Emitter
15 InP 21018 : Si Emitter
30 InGaAs 9-51019 : C Base
13.5 In0.53Ga0.47 As 51016 : Si Setback
16.5 InGaAs / InAlAs 51016 : Si B-C Grade
3 InP 3.6 1018 : Si Pulse doping
67 InP 51016 : Si Collector
7.5 InP 11019 : Si Sub Collector
5 In0.53Ga0.47 As 41019 : Si Sub Collector
300 InP 21019 : Si Sub Collector
Substrate SI : InP
Vbe = 1 V, Vcb = 0.7 V, Je = 24 mA/mm2
-2.5
-2
-1.5
-1
-0.5
0
0.5
1
1.5
0 50 100 150 200
En
erg
y (
eV
)
Distance (nm)
Emitter
Collector
Base
Thin emitter semiconductor
Enables wet etching
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Results - DC Measurements
BVceo = 3.7 V @ Je = 0.1 mA/cm2
β = 17
@Peak f,fmax
Je = 20.4 mA/mm2
P = 33.5 mW/mm2
Gummel plot
Common emitter I-V
0
5
10
15
20
25
30
0 1 2 3 4 5
Je (
mA
/mm
2)
Vce
(V)
P = 30 mW/mm2
Ib,step
= 200 mA
BV
P = 20 mW/mm2
Aje
= 0.22 x 2.7 mm2
10-9
10-7
10-5
10-3
10-1
0
5
10
15
20
0 0.2 0.4 0.6 0.8 1
I c, I b
(A
)
Vbe
(V)
Solid line: Vcb
= 0.7V
Dashed: Vcb
= 0V
nc = 1.19
nb = 1.87
Ic
Ib
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TEM – Wide, misaligned base mesa
0.5 mm
50 nm
Small EB gap
Misalignment
FIB/TEM by H. Chiang
• 220 nm emitter-base junction
• 1.1 mm wide base-collector mesa
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RF Data
Ic = 12.1 mA
Je = 20.4 mA/mm2
Vcb = 0.7 V
P = 33.5 mW/mm2
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5
10
15
20
25
30
35
109
1010
1011
1012
Gain
s (
dB
)
freq (Hz)
Aje
= 0.22 x 2.7 mm2
f = 480 GHz
fmax
= 1.0 THz
H21
U
W-Band measurements to verify f/fmax
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Base Post Cap
Ccb,post does not scale with Le
Adversely effects fmax as Le ↓
Need to minimize the Ccb,post value
c
postr
postcbT
AC
0
,
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Base Post Cap
Ccb,post does not scale with Le
Adversely effects fmax as Le ↓
Need to minimize the Ccb,post value
c
postr
postcbT
AC
0
,
Undercut below base post
0
2
4
6
0 1 2 3 4 5
Ccb (
fF)
Le (mm)
y = 1.09x - 0.02
No contribution of Base post to Ccb
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Base Metal Resistance
bc
e
metalbbW
LR
6metalsh,,
BaseIb
BP
• Rbb,metal increases with emitter length
fmax decreases with increase in emitter length
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Base Metal Resistance
bc
e
metalbbW
LR
6metalsh,,
BaseIb
BP
• Rbb,metal increases with emitter length
fmax decreases with increase in emitter length
200
300
400
500
0 5 10 15 20 25
Le = 3mm
Le = 4mm
Le = 5mm
f (
GH
z)
Je (mA/mm
2)
200
400
600
800
1000
0 5 10 15 20 25
Le = 3mm
Le = 4mm
Le = 5mm
f ma
x (
GH
z)
Je (mA/mm
2)
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Parameter Extraction
Jkirk = 23 mA/mm2 (@Vcb = 0.7V)
200
600
1000
200
300
400
500
600
0 5 10 15 20 25 30
f
f max (
GH
z) f
(GH
z)
Je (mA/mm
2)
Vcb
= 0V
Vcb
= 0.7Vfmax
2
3
4
5
6
0 5 10 15 20 25 30
Ccb (
fF)
Je (mA/mm
2)
Vcb
= 0.7 V
Vcb
= 0.5 V
Vcb
= 0 V
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Equivalent Circuit
Hybrid- equivalent circuit from measured RF data
Rex ~ 4.2 Wmm2
freq (1.000GHz to 67.00GHz)
S(1
,1)
S(2
,2)
S(1
,2)*
5S
(2,1
)/10
freq (100.0MHz to 67.00GHz)
S_para
mete
r_D
eem
bed_P
NA
..S
12d*5
S_para
mete
r_D
eem
bed_P
NA
..S
21d/1
0S
_para
mete
r_D
eem
bed_P
NA
..S
11d
S_para
mete
r_D
eem
bed_P
NA
..S
22d
S21/10S12x5
S11
S22
--- : Measured
x : Simulated
freq (1.000GHz to 67.00GHz)
S(1
,1)
S(2
,2)
S(1
,2)*
5S
(2,1
)/10
freq (100.0MHz to 67.00GHz)
S_para
mete
r_D
eem
bed_P
NA
..S
12d*5
S_para
mete
r_D
eem
bed_P
NA
..S
21d/1
0S
_para
mete
r_D
eem
bed_P
NA
..S
11d
S_para
mete
r_D
eem
bed_P
NA
..S
22d
S21/10S12x5
S11
S22
--- : Measured
x : Simulated
Ccb,x = 2.72 fF
Ccb,i = 0.52 fF
Rcb = 27 kW
Rc = 3.4 W
Rex = 7 W
Rbe = 86 W
Rbb = 27 W
Cje + Cdiff = 8.8 + 59.2 fF gmVbee-j
0.234Vbee(-j0.14ps)
Base
Emitter
Col
Ccg = 3.2 fF
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Summary
• Demonstrated DHBTs with peak f / fmax = 480/1000 GHz
• Small Wgap for reduced base access resistance High fmax
• Undercut below the base post to reduce Ccb
• Narrow sidewalls, smaller base mesa and better base ohmicsneeded to enable higher bandwidth devices
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Questions?
Thank You
This work was supported by the DARPA THETA program under HR0011-09-C-006.
A portion of this work was done in the UCSB nanofabrication facility, part of NSF funded NNIN network and MRL Central Facilities supported by the MRSEC Program of the NSF under award No. MR05-20415