Epitaxial Heterostructures - Assetsassets.cambridge.org/97811074/10022/frontmatter/....MATERIALS...

Epitaxial Heterostructures

www.cambridge.org© in this web service Cambridge University Press

Cambridge University Press978-1-107-41002-2 - Materials Research Society Symposium Proceedings: Volume 198:Epitaxial HeterostructuresEditors: Don W. Shaw, John C. Bean, Vassilis G. Keramidas and Paul S. PeercyFrontmatterMore information

http://www.cambridge.org/9781107410022

http://www.cambridge.org


.MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 198

Epitaxial Heterostructures

Symposium held April 16-19, 1990, San Francisco, California, U.S.A.

EDITORS:

Don W. ShawTexas Instruments, Dallas, Texas, U.S.A.

John C. BeanAT&T Bell Laboratories, Murray Hill, New Jersey, U.S.A.

Vassilis G. KeramidasBellcore, Red Bank, New Jersey, U.S.A.

Paul S. PeercySandia National Laboratories, Albuquerque, New Mexico, U.S.A.

IMIRIS1 MATERIALS RESEARCH SOCIETYPittsburgh, Pennsylvania






cambridge university press Cambridge, New York, Melbourne, Madrid, Cape Town, Singapore, São Paulo, Delhi, Mexico City

Cambridge University Press32 Avenue of the Americas, New York ny 10013-2473, USA

Published in the United States of America by Cambridge University Press, New York

www.cambridge.orgInformation on this title: www.cambridge.org/9781107410022

Materials Research Society506 Keystone Drive, Warrendale, pa 15086http://www.mrs.org

© Materials Research Society 1990

This publication is in copyright. Subject to statutory exceptionand to the provisions of relevant collective licensing agreements, no reproduction of any part may take place without the written permission of Cambridge University Press.

This publication has been registered with Copyright Clearance Center, Inc.For further information please contact the Copyright Clearance Center,Salem, Massachusetts.

First published 1990 First paperback edition 2012

Single article reprints from this publication are available throughUniversity Microfilms Inc., 300 North Zeeb Road, Ann Arbor, mi 48106

CODEN: MRSPDH

isbn 978-1-107-41002-2 Paperback

Cambridge University Press has no responsibility for the persistence oraccuracy of URLs for external or third-party internet websites referred to inthis publication, and does not guarantee that any content on such websites is,or will remain, accurate or appropriate.

This work was supported by the Air Force Office of Scientific Research, Air Force Systems Command, USAF, under Grant Number AFOSR 90-0260.






Contents

PREFACE xiii

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS xiv

PART I: SELECTIVE AREA EPITAXY

*HETEROSTRUCTURE NANOELECTRONICS: A LOOK INTO THEFUTURE (PLENARY) 3

John R. Barker

IN-SITU PATTERNING AND REGROWTH OF InP BASEDHETEROSTRUCTURES USING A NATIVE OXIDE MASK 17

Y.L. Wang, L.R. Harriott, and H. Temkin

*SELECTIVE EPITAXY OF COMPOUND SEMICONDUCTORS IN MOVPEGROWTH: GROWTH, MODELLING, AND APPLICATIONS 2 3

T.F. Kuech, M. Goorsky, A. Palevsky, P. Solomon,and M.A. Tischler

RAPID THERMAL CHEMICAL VAPOR DEPOSITION: SELECTIVEEPITAXIAL SILICON GROWTH (SEG) 3 3

J.W. Osenbach, Y.H. Ku, and A. Kermani

HIGH QUALITY GaAs ON Si BY SELECTIVE AREA EPITAXY 3 9N.H. Karam, V. Haven, S.M. Vernon, N. El-Masry,M. Lingunis, and N. Haegel

THE INFLUENCE OF SUBSTRATE PATTERNING ON THREADINGDISLOCATION DENSITY AND RESIDUAL STRESS IN GaAs/SiHETEROEPITAXIAL LAYERS 45

Hyunchul Sohn, Eicke R. Weber, Jay Tu,Henry P. Lee, and Shyh Wang

ISLAND FORMATION IN Ge ON Si HETEROEPITAXY 51D.J. Eaglesham, H.-J. Gossmann, and M. Cerullo

FORMATION OF HIGH QUALITY Si1-xGe /Si HETEROSTRUCTURESBY SELECTIVE-AREA MBE GROWTH " 57

Eiichi Murakami, Akio Nishida, Hiroyuki Etoh,Kiyokazu Nakagawa, and Masanobu Miyao

PART II: ORDERING ISee also paper on page 609 (Part X: Ordering II)

OPTICAL INVESTIGATIONS OF SYMMETRY BREAKING IN GaInP2 65A. Mascarenhas, Sarah Kurtz, A. Kibbler, andJ.M. Olson

CHARACTERIZATION AND GROWTH OF ORGANIC MULTIPLE QUANTUMWELL STRUCTURES 71

F.F. So, S.R. Forrest, Y.Q. Shi, and W.H. Steier

*Invited Paper






TEMPERATURE DEPENDENCE OF COMPOSITIONAL DISORDERING OFGaAs-AlAs SUPERLATTICES DURING MeV Kr IRRADIATION 79

R.P. Bryan, L.M. Miller, T.M. Cockerill,J.J. Coleman, J.L. Klatt, and R.S. Averback

PROPERTIES OF INTERFACES BETWEEN SUPERLATTICEHETEROSTRUCTURES AND UNIFORM ALLOY MATERIALS ASREALIZED BY IMPURITY INDUCED DISORDERING 85

R.L. Thornton, F.A. Ponce, G.B. Anderson, andH.F. Chung

PART III: THEORY AND MODELING

*NUCLEATION AND GROWTH MECHANISMS IN HETERO-EPITAXIALFILMS 93

J.A. Venables, J.S. Drucker, M. Krishnamurthy,G. Raynerd, and T. Doust

HETEROEPITAXY BETWEEN LATTICE-MISMATCHED MATERIALSWITH VAN DER WAALS INTERACTIONS 105

Atsushi Koma

DISLOCATION ARRAYS IN EPITAXIAL INTERFACES 111R. Beanland and R.C. Pond

PART IV: GaAs HETEROEPITAXY

•HETEROEPITAXY OF InP ON Si FOR OPTICAL DEVICES 119Hidefumi Mori, Mitsuru Sugo, Masami Tachikawa,Yoshio Itoh, and Masafumi Yamaguchi

ATOMICALLY ABRUPT AND SMOOTH HETEROINTERFACES: ANOPTICAL INVESTIGATION 129

Colin A. Warwick, William Y. Jan, Abbas Ourmazd,Timothy D. Harris, and Jiirgen Christen

WEDGE TEM CHARACTERIZATION OF MOVPE GalnAs/InP LAYERS,CONCENTRATION GRADING AT INTERFACES 135

R. Spycher, P.A. Stadelmann, and P.A. Buffat

CHARACTERISTICS OF MOCVD-GROWN AlGaAs/GaAs SQW LASERSAND GaAs MESFETs FABRICATION ON Si SUBSTRATE WITHSiO2-BACK COATING 141

Takashi Egawa, Hitoshi Tada, Yasufumi Kobayashi,Shinji Nozaki, Tetsuo Soga, Takashi Jimbo, andMasayoshi Umeno

STUDY OF THE INFLUENCE OF STRUCTURAL PROPERTIES ON SiAND Be DOPING OF HETEROEPITAXIAL InAsSb ON GaAs-COATEDSi SUBSTRATES FOR INFRARED PHOTODIODES 147

J. De Boeck, W. Dobbelaere, M. Van Hove,J. Vanhellemont, W. De Raedt, W. Vandervorst,R. Mertens, and G. Borghs

*Invited Paper






*BURIED METAL/III-V SEMICONDUCTOR HETEROEPITAXY:APPROACHES TO LATTICE MATCHING 153

C.J. Palmstr^m, J.P. Harbison, T. Sands, R. Ramesh,T.G. Finstad, S. Mounier, J.G. Zhu, C.B. Carter,L.T. Florez, and V.G. Keramidas

IMPROVEMENT OF InP-GaAs-Si QUALITY BY THERMAL-CYCLEGROWTH 163

S.M. Vernon, C.J. Keavney, E.D. Gagnon,N.H. Karam, M.M. Al-Jassim, N.M. Haegel,V.P. Mazzi, and C.R. Wie

MISFIT DISLOCATIONS AT MISMATCHED EPITACTICHETEROJUNCTIONS 171

Jane G. Zhu, C. Barry Carter, andChris J. Palmstr^m

DEFECTS IN MBE-GROWN GaAs/Sc^Er^As/GaAs LAYERS 177Jane G. Zhu, Chris J. Palmstr0m, andC. Barry Carter

*ATOMIC LAYER EPITAXY 183Akira Usui

INTERFACE FORMATION AND THE HETEROEPITAXY OF ZnSe ON Si 195R.D. Bringans, D.K. Biegelsen, F.A. Ponce,L.-E. Swartz, and J.C. Tramontana

TEM CHARACTERIZATION OF DISLOCATIONS IN GaAs-ON-SiHETEROSTRUCTURES WITH SUPERLATTICE INTERMEDIATE LAYERS 2 01

T. Soga, H. Nishikawa, T. Jimbo, and M. Umeno

THE INFLUENCE OF INITIAL GROWTH ON DEFECT GENERATION INMOCVD GROWN GaAs/Si HETEROEPITAXIAL LAYERS 207

T. George, E.R. Weber, S. Nozaki, A.T. Wu, andM. Umeno

UNDOPED GaAs WITH A LOW ELECTRON CONCENTRATION GROWN ONSi BY MOCVD 213

Shinji Nozaki, A.T. Wu, J.J. Murray, T. George,and M. Umeno

GaAs HETEROEPITAXY ON SUBSTRATE-ENGINEERED SILICON USINGSixGe1_x MULTILAYER STRUCTURES 219

J.B. Posthill, R. Venkatasubramanian, D.P. Malta,S.V. Hattangady, G.G. Fountain, M.L. Timmons, andR.J. Markunas

NUCLEATION AND DEFECT STRUCTURES OF GaAs FILMS GROWN ONREACTIVE ION ETCHED Si SUBSTRATES 2 25

Henry P. Lee, Thomas George, Hyunchul Sohn, Jay Tu,Eicke R. Weber, and Shyh Wang

*THE HETEROEPITAXY AND CHARACTERIZATION OF InP AND GalnPON SILICON FOR SOLAR CELL APPLICATIONS 235

M.M. Al-Jassim, R.K. Ahrenkiel, M.W. Wanlass,J.M. Olson, and S.M. Vernon

*Invited Paper

vii






GROWTH AND CHARACTERIZATION OF InP/GaAs ON SOI BY MOCVD 247N.H. Karam, V. Haven, S.M. Vernon, F. Namavar,N. El-Masry, N. Haegel, and M.M. Al-Jassim

OPTIMISATION OF THE HETEROEPITAXY OF Ge ON GaAs FORMINORITY-CARRIER LIFETIME 253

R. Venkatasubramanian, M.L. Timmons, S. Bothra,and J.M. Borrego

•ALTERNATIVE CHEMISTRIES FOR MOCVD GROWTH OF III/VMATERIALS 259

R.M. Lum and J.K. Klingert

MBE GROWTH OF HIGH QUALITY (lll)B GaAs, GalnAs, ANDAlInAs 2 65

P. Harshman, K.J. Malloy, J. Walker, J.S. Smith,and S. Wang

HETEROEPITAXIAL GROWTH OF InP AND GalnAs ON GaAsSUBSTRATES USING TERTIARYBUTYLARSINE ANDTERTIARYBUTYLPHOSPHINE 271

Shirley S. Chu, T.L. Chu, C.H. Yoo, and G.L. Smith

MOLECULAR BEAM EPITAXIAL GROWTH AND CHARACTERIZATION OFInSb AND InAsxSb1_x 2 77

P.N. Uppal, D.M. Gill, and R. Herring

MBE GROWTH OF STRAINED-LAYER InSb/InAlSb STRUCTURES 283C.R. Whitehouse, C.F. McConville, G.M. Williams,A.G. Cullis, S.J. Barnett, M.K. Saker,M.S. Skolnick, and A.D. Pitt

InGaAs/AlAsSb HETEROSTRUCTURES LATTICE-MATCHED TO InPGROWN BY MOLECULAR BEAM EPITAXY 289

Y. Nakata, Y. Sugiyama, T. Inata, O. Ueda, S. Sasa,S. Muto, and T. Fujii

PART V: ELECTRONIC PROPERTIES & DEVICES

InGaAs/GaAs GRADED SUPERLATTICES IN PHOTODETECTORS FORWAVELENGTHS BEYOND 1 jL6m 297

R. Mariella, Jr., J. Morse, and Z. Liliental-Weber

INFRARED PHOTOCONDUCTIVITY AND PHOTOLUMINESCENCE FROMInAs/Ga1_xInjcSb STRAINED-LAYER SUPERLATTICES 3 03

R.H."Miles, D.H. Chow, and T.C. McGill

*SEMICONDUCTOR RESONANT TUNNELING DEVICE PHYSICS ANDAPPLICATIONS 3 09

Mark A. Reed, Alan C. Seabaugh, Yung-Chung Kao,John N. Randall, William R. Frensley, andJames H. Luscombe

ZINC DIFFUSION IN GaAs-AlGaAs HETEROJUNCTION BIPOLARTRANSISTOR STRUCTURES 321

W.S. Hobson, S.J. Pearton, and A.S. Jordan

*Invited Paper

viii






ON THE THERMOELECTRIC POWER IN QUANTUM DOTS OFNON-PARABOLIC SEMICONDUCTORS IN THE PRESENCE OF ACLASSICALLY LARGE FIELD 327

Kamakhya P. Ghatak, B. De, M. Mondal, andS.N. Biswas

EINSTEIN RELATION IN QUANTUM WIRES OF TETRAGONALSEMICONDUCTORS 333

Kamakhya P. Ghatak, B. De, M. Mondal, andS.N. Biswas

PART VI: CHARACTERIZATION METHODS

*OPTICAL APPROACHES TO REAL-TIME ANALYSIS AND CONTROLOF CRYSTAL GROWTH 341

D.E. Aspnes

*ELECTRON MICROSCOPY AND DIFFRACTION OF THE EARLYSTAGES OF METAL HETEROEPITAXY 353

E. Bauer

*SCANNING TUNNELING MICROSCOPY STUDIES OF GaAsHETEROEPITAXIAL GROWTH ON Si 359

D.K. Biegelsen, R.D. Bringans, J.E. Northrup,and L.E. Swartz

TEM STUDY OF THE STRUCTURE OF MBE GaAs LAYERS GROWNAT LOW TEMPERATURE 371

Zuzanna Liliental-Weber

CHARACTERIZATION OF GaAs/AlGaAs HETEROSTRUCTURE QUANTUMWELLS BY MICROWAVE ABSORPTION 377

Hans P. Zappe and Wolfgang Jantz

CHARACTERIZATION OF MBE GaAs LAYERS GROWNAT 200°C-300°C 383

C.R. Wie, K. Xie, T.T. Bardin, J.G. Pronko,D.C. Look, K.R. Evans, and C.E. Stutz

A NOVEL APPROACH TO THE ASSESSMENT OF SEMICONDUCTORHETERO-INTERFACES IN MULTILAYER STRUCTURES 389

J.S. Rimmer, M. Missous, A.R. Peaker, andB. Hamilton

PART VII: II-VI HETEROEPITAXY

*MBE GROWTH AND CHARACTERIZATION OF HgCdTeHETEROSTRUCTURES 3 97

R.J. Koestner, M.W. Goodwin, and H.F. Schaake

HETEROEPITAXY OF Ge ON VICINAL Si(100) 409Mohan Krishnamurthy, Jeff S. Drucker, andJ.A. Venables

*Invited Paper






EXPLANATION OF OBSERVED P-TYPE CONDUCTIVITY IN MOVPEZnSe/GaAs HETEROSTRUCTURES 415

O. Briot, T. Cloitre, N. Tempier, R. Sauvezon,M. Averous, and R.L. Aulombard

COMPUTER SIMULATION OF THE METAL ORGANIC CHEMICAL VAPORDEPOSITION OF CdTe 421

S. Kang, T.J. Jasinski, G.S. Tompa, and R.A. Stall

OPTICAL INVESTIGATION OF THE BAND OFFSET OFCdxZn1_xTe/ZnTe AND ZnSexTe1_x/ZnTe SUPERLATTICES 427

Y.~Rajakarunanayake, M.C. Phillips, J.O. McCaldin,D.H. Chow, D.A. Collins, and T.C. McGill

AN ELECTRON MICROSCOPIC CHARACTERIZATION OF MBE-GROWNZnSe/GaAs AND ZnSe/Ge HETEROINTERFACES 433

S.B. Sant, R.W. Smith, and G.C. Weatherly

GROWTH AND CHARACTERIZATION OF ZnSeTe EPILAYERS ANDSUPERLATTICES 439

M.C. Phillips, Y. Rajakarunanayake, J.O. McCaldin,R.H. Miles, D.H. Chow, D.A. Collins, and T.C. McGill

XPS AND AES STUDIES OF THE INITIAL STAGE OF CdTe GROWTHON (100) GaAs BY MOVPE 445

Mitsuru Ekawa, Kazuhito Yasuda, Syuji Sone,Yoshiyuki Sugiura, Manabu Saji, and Akikazu Tanaka

PROPERTIES OF IV-VI NARROW GAP SEMICONDUCTORS ONFLUORIDE COVERED SILICON 451

H. Zogg, C. Maissen, S. Blunier, J. Masek, V. Meyer,and R.E. Pixley

PART VIII: Si HETEROEPITAXY: GeSi ON Si

*STRAIN RELAXATION MECHANISMS IN LATTICE MISMATCHEDEPITAXY 459

R. Hull, J.C. Bean, J.M. Bonar, and L. Peticolas

X-RAY STUDY OF INTERDIFFUSION AND STRAIN RELAXATION INANNEALED (SimGen)p ATOMIC LAYER SUPERLATTICES 473

J.-M. Baribeau, R. Pascual, and S. Saimoto

LUMINESCENCE OF MBE Si Ge STRAINED MONOLAYERSUPERLATTICES 479

M.A. Kallel, V. Arbet-Engels, R.P.G. Karunasiri,and K.L. Wang

Si/Ge STRAINED-LAYER EPITAXY: Si1-xGex ALLOY BUFFERLAYERS AND ULTRA-SHORT PERIOD SimGen SUPERLATTICES 485

M. Ospelt, J. Henz, E. Miiller, and H. Von Kanel

ROLE OF Si1_xGex BUFFER LAYER IN DETERMINING ELECTRICALCHARACTERISTICS OF MODULATION-DOPEDp-SiQ 5GeQ#5/Ge/Si1_xGex HETEROSTRUCTURES 491

Eiichi Murakami, Hiroyuki Etoh, Akio Nishida,Kiyokazu Nakagawa, and Masanobu Miyao

*Invited Paper






HETEROEPITAXIAL CxSi1-x/Si(100) METASTABLE ALLOYS 497J.B. Posthill, R.A. Rudder, S.V. Hattangady,G.G. Fountain, T.P. Humphreys, R.J. Nemanich,N.R. Parikh, and R.J. Markunas

CONFINEMENT OF THREADING DISLOCATIONS IN SIMOX WITH AGeSi STRAINED LAYER 503

F. Namavar, E. Cortesi, D.L. Perry, E.A. Johnson,N.M. Kalkhoran, J.M. Manke, N.H. Karam,R.F. Pinizzotto, and H. Yang

RAPID THERMAL PROCESSING OF BURIED Si1-xGex STRAINEDLAYERS; PHOTOLUMINESCENCE DECAY AND MISFIT DISLOCATIONGENERATION 509

D.C. Houghton and N.L. Rowel1

PHOTOLUMINESCENCE FROM COHERENTLY STRAINED Si1_xGex

ALLOYS " 515N.L. Rowell, J.-P. Noel, D.C. Houghton, andD.D. Perovic

RAPID THERMAL OXIDATION OF GeSi STRAINED LAYERS 521D.K. Nayak, K. Kamjoo, J.S. Park, J.C.S. Woo,and K.L. Wang

GROWTH OF EPITAXIAL LAYERS OF G e ^ i ^ BY UHV/CVD 527Marco Racanelli and David W. Greve

DISILANE ADSORPTION ON Ge(lll): A MULTIPLE INTERNALREFLECTION INFRARED SPECTROSCOPY STUDY 533

John E. Crowe11 and Guangquan Lu

*GAS SOURCE Si-MBE 539Hiroyuki Hirayama, Masayuki Hiroi, Kazuhisa Koyama,and Toru Tatsumi

HETEROEPITAXY AND CHARACTERISATION OF Ge-RICH SiGe ALLOYSON GaAs 547

R. Venkatasubramanian, M.L. Timmons, M. Mantini,C.T. Kao, and N.R. Parikh

CARBON DOPED SILICON EMITTERS FABRICATED USING LIMITEDREACTION PROCESSING 553

F.H. Ruddell, B.M. Armstrong, H.S. Gamble,K.B. Affolter, P.B. Moynagh, and P.J. Rosser

DEFECT REDUCTION OF CVD-GROWN CUBIC SiC EPITAXIALFILMS ON OFF-AXIS Si(100) SUBSTRATES WITH A NOVELOFF-DIRECTION 559

Katsuki Furukawa, Yoshihisa Fujii, Akira Suzuki,and Shigeo Nakajima

PART IX: Si HETEROEPITAXY: METAL SILICIDES

MESO-EPITAXY: EPITAXIAL GROWTH OF SILICON OVER BURIEDSINGLE CRYSTAL CoSi2 LAYERS 567

J.W. Osenbach, A.E. White, K.T. Short,H.C. Praefcke, and V.C. Kannon

*Invited Paper






ELECTRICAL PROPERTIES OF ION BEAM SPUTTERING GROWNEPITAXIAL YTTRIA STABILIZED ZIRCONIA FILMS ON SILICON 577

P. Hesto, C. Pellet, C. Schwebel, E. DuPont-Nivet,and A. Le Noxaic

COLUMNAR EPITAXY OF HEXAGONAL AND ORTHORHOMBIC SILICIDESON Si(111) 583

R.W. Fathauer, C.W. Nieh, Q.F. Xiao, andShin Hashimoto

FORMATION OF PINHOLE-FREE EPITAXIAL YTTRIUM SILICIDEON SILICON(111) 589

Michael P. Siegal, Jorge J. Santiago, andWilliam R. Graham

EPITAXIAL GROWTH AND STABILITY OF C49 TiSi2 ON Si(111) 595Hyeongtag Jeon, J.W. Honeycutt, C.A. Sukow,T.P. Humphreys, R.J. Nemanich, and G.A. Rozgonyi

STRUCTURAL CHARACTERIZATION OF ULTRATHIN EPITAXIALErSi2_x ON Si (111) 601

F.H. Kaatz, J. Van der Spiegel, and W.R. Graham

PART X: ORDERING IISee also Part II: Ordering I

*SURFACE PHASE SEPARATION AND ORDERING IN COMPOUNDSEMICONDUCTOR ALLOYS 609

T.L. McDevitt, S. Mahajan, D.E. Laughlin,W.A. Bonner, and V.G. Keramidas

AUTHOR INDEX 625

SUBJECT INDEX 629

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS 633

*Invited Paper






Preface

This volume contains most of the papers presented at thesymposium on "Epitaxial Heterostructures," which was held in SanFrancisco, California, on April 16-20, as a part of the 1990Spring Meeting of the Materials Research Society.

We wish to thank all of the participants including thefollowing outstanding roster of invited speakers: J. Barker,P.D. Kirchner, T.F. Kuech, A. Zunger, S. Mahajan, J.A. Venables,P.D. Augustus, H. Mori, J.P. Harbison, A. Usui, M.M. Al-Jassim,R.M. Lum, F. Capasso, M. Reed, D.E. Aspnes, E. Bauer, J.Y. Tsao,D.K. Biegelson, R.J. Koestner, D.W. Kisker, R. Hull, and H.Hirayama.

We also thank the following session co-chairmen:M. Yamaguchi, T.D. Moustakas, Z. Lilental-Weber, D.C. Houghton,and M. Ospelt.

We gratefully acknowledge the financial support providedby the Air Force Office of Scientific Research, Aixtron, Instru-ments SA, Inc., Spire, Nimic, Inc., Vacuum Generators, andSumitomo Electric USA, Inc.

Finally, we are indebted to Joanne Lo Piccolo for herenthusiastic assistance in assembling this proceedings volume.

Don W. ShawJohn C. BeanVassilis KeramidasPaul S. Peercy

July 2, 1990






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Recent Materials Research Society Symposium Proceedings

Volume 157—Beam-Solid Interactions: Physical Phenomena, J.A. Knapp, P. Borgesen,R.A. Zuhr, 1989, ISBN 1-55899-045-3

Volume 158—In-Situ Patterning: Selective Area Deposition and Etching, R. Rosenberg,A.F. Bernhardt, J.G. Black, 1989, ISBN 1-55899-046-1

Volume 159—Atomic Scale Structure of Interfaces, R.D. Bringans, R.M. Feenstra,J.M. Gibson, 1989, ISBN 1-55899-047-X

Volume 160—Layered Structures: Heteroepitaxy, Superlattices, Strain, andMetastability, B.W. Dodson, L.J. Schowalter, J.E. Cunningham,F.H. Pollak, 1989, ISBN 1-55899-048-8

Volume 161—Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films,Quantum Well Structures and Dilute Magnetic Systems, J.F. Schetzina,F.J. Bartoli, Jr., H.F. Schaake, 1989, ISBN 1-55899-049-6

Volume 162—Diamond, Boron Nitride, Silicon Carbide and Related Wide BandgapSemiconductors, J.T. Glass, R.F. Messier, N. Fujimori, 1989,ISBN 1-55899-050-X

Volume 163—Impurities, Defects and Diffusion in Semiconductors: Bulk and LayeredStructures, J. Bernholc, E.E. Haller, D.J. Wolford, 1989,ISBN 1-55899-051-8

Volume 164—Materials Issues in Microcrystalline Semiconductors,P.M. Fauchet, C.C. Tsai, K. Tanaka, 1989, ISBN 1-55899-052-6

Volume 165—Characterization of Plasma-Enhanced CVD Processes, G. Lucovsky,D.E. Ibbotson, D.W. Hess, 1989, ISBN 1-55899-053-4

Volume 166—Neutron Scattering for Materials Science, S.M. Shapiro, S.C. Moss,J.D. Jorgensen, 1989, ISBN 1-55899-054-2

Volume 167—Advanced Electronic Packaging Materials, A. Barfknecht, J. Partridge,C-Y. Li, CJ. Chen, 1989, ISBN 1-55899-055-0

Volume 168—Chemical Vapor Deposition of Refractory Metals and Ceramics,T.M. Besmann, B.M. Gallois, 1989, ISBN 1-55899-056-9

Volume 169—High Temperature Superconductors: Fundamental Properties and NovelMaterials Processing, J. Narayan, C.W. Chu, L.F. Schneemeyer,D.K. Christen, 1989, ISBN 1-55899-057-7

Volume 170—Tailored Interfaces in Composite Materials, C.G. Pantano, EJ.H. Chen,1989, ISBN 1-55899-058-5

Volume 171—Polymer Based Molecular Composites, D.W. Schaefer, J.E. Mark, 1989,ISBN 1-55899-059-3

Volume 172—Optical Fiber Materials and Processing, J.W. Fleming, G.H. Sigel,S. Takahashi, P.W. France, 1989, ISBN 1-55899-060-7

Volume 173—Electrical, Optical and Magnetic Properties of Organic Solid-StateMaterials, L.Y. Chiang, D.O. Cowan, P. Chaikin, 1989,ISBN 1-55899-061-5

Volume 174—Materials Synthesis Utilizing Biological Processes, M. Alper, P.D. Calvert,P.C. Rieke, 1989, ISBN 1-55899-062-3

Volume 175—Multi-Functional Materials, D.R. Ulrich, F.E. Karasz, A.J. Buckley,G. Gallagher-Daggitt, 1989, ISBN 1-55899-063-1

Volume 176—Scientific Basis for Nuclear Waste Management XIII, V.M. Oversby,P.W. Brown, 1989, ISBN 1-55899-064-X

Volume 177—Macromolecular Liquids, C.R. Safinya, S.A. Safran, P.A. Pincus, 1989,ISBN 1-55899-065-8

Volume 178—Fly Ash and Coal Conversion By-Products: Characterization, Utilizationand Disposal VI, F.P. Glasser, R.L. Day, 1989, ISBN 1-55899-066-6






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 179—Specialty Cements with Advanced Properties, H. Jennings, A.G. Landers,B.E. Scheetz, I. Odler, 1989, ISBN 1-55899-067-4

Volume 180—Better Ceramics Through Chemistry IV, CJ. Brinker, D.E. Clark,D.R. Ulrich, B.JJ. Zelinsky, 1990, ISBN: 1-55899-069-0

Volume 181—Advanced Metallizations in Microelectronics, A. Katz, S.P. Murarka,A. Appelbaum, 1990, ISBN: 1-55899-070-4

Volume 182—Polysilicon Thin Films and Interfaces, B. Raicu, T.Kamins,C.V. Thompson, 1990, ISBN: 1-55899-071-2

Volume 183—High-Resolution Electron Microscopy of Defects in Materials, R. Sinclair,D.J. Smith, U. Dahmen, 1990, ISBN: 1-55899-072-0

Volume 184—Degradation Mechanisms in III-V Compound Semiconductor Devices andStructures, V. Swaminathan, SJ. Pearton, O. Manasreh, 1990,ISBN: 1-55899-073-9

Volume 185—Materials Issues in Art and Archaeology II, J.R. Druzik, P.B. Vandiver,G. Wheeler, 1990, ISBN: 1-55899-074-7

Volume 186—Alloy Phase Stability and Design, G.M. Stocks, D.P. Pope, A.F. Giamei,1990, ISBN: 1-55899-075-5

Volume 187—Thin Film Structures and Phase Stability, B.M. Clemens, W.L. Johnson,1990, ISBN: 1-55899-076-3

Volume 188—Thin Films: Stresses and Mechanical Properties II, W.C. Oliver,M. Doerner, G.M. Pharr, F.R. Brotzen, 1990, ISBN: 1-55899-077-1

Volume 189—Microwave Processing of Materials II, W.B. Snyder, W.H. Sutton,D.L. Johnson, M.F. Iskander, 1990, ISBN: 1-55899-078-X

Volume 190—Plasma Processing and Synthesis of Materials III, D. Apelian, J. Szekely,1990, ISBN: 1-55899-079-8

Volume 191—Laser Ablation for Materials Synthesis, D.C. Paine, J.C. Bravman, 1990,ISBN: 1-55899-080-1

Volume 192—Amorphous Silicon Technology, P.C. Taylor, M.J. Thompson,P.G. LeComber, Y. Hamakawa, A. Madan, 1990, ISBN: 1-55899-081-X

Volume 193—Atomic Scale Calculations of Structure in Materials, M.A. Schluter,M.S. Daw, 1990, ISBN: 1-55899-082-8

Volume 194—Intermetallic Matrix Composites, D.L. Anton, R. McMeeking, D. Miracle,P. Martin, 1990, ISBN: 1-55899-083-6

Volume 195—Physical Phenomena in Granular Materials, T.H. Geballe, P. Sheng,G.D. Cody, 1990, ISBN: 1-55899-084-4

Volume 196—Superplasticity in Metals, Ceramics, and Intermetallics, M.J. Mayo,J. Wadsworth, M. Kobayashi, A.K. Mukherjee, 1990, ISBN: 1-55899-085-2

Volume 197—Materials Interactions Relevant to the Pulp, Paper, and Wood Industries,J.D. Passaretti, D. Caulfield, R. Roy, V. Setterholm, 1990,ISBN: 1-55899-086-0

Volume 198—Epitaxial Heterostructures, D.W. Shaw, J.C. Bean, V.G. Keramidas,P.S. Peercy, 1990, ISBN: 1-55899-087-9

Volume 199—Workshop on Specimen Preparation for Transmission ElectronMicroscopy of Materials II, R. Anderson, 1990, ISBN: 1-55899-088-7

Volume 200—Ferroelectric Thin Films, A.I. Kingon, E.R. Myers, 1990,ISBN: 1-55899-089-5

Earlier Materials Research Society Symposium Proceedings listed in the back.






Epitaxial Heterostructures - Assetsassets.cambridge.org/97811074/10022/frontmatter/....MATERIALS...

Documents

Transcript of Epitaxial Heterostructures - Assetsassets.cambridge.org/97811074/10022/frontmatter/....MATERIALS...