EPIBLU LED DEMONSTRATIONS OCT 2018 · 10/31/2018 · GaN: Mg (p+ cap) GaN: Mg (p-GaN)...
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[email protected] + 61 2 9334 2300 74 ASQUITH STREET SILVERWATER, NSW, 2128 AUSTRALIA EPIBLU LED DEMONSTRATIONS – OCT 2018 RPCVD In-RICH InGaN FOR RGB microLEDs AND LEDs EL spectra of LEDs with InGaN/GaN MQWs grown using RPCVD Normalized Intensity Wavelength (nm) For RPCVD the density of active nitrogen is controlled by the plasma parameters. Unlike MOCVD, where the pyrolysis of NH 3 is strongly temperature-dependent, RPCVD can provide a high density of active nitrogen at low growth temperatures. This facilitates the growth of InGaN MQWs at higher growth rates and lower temperatures enabling the wavelength to be pushed beyond green to yellow, amber and towards red emission. The normalised EL spectra and EL images demonstrate the potential for RPCVD to be used for long wavelength applications. EL quick test data taken using indium dot contacts.
Transcript of EPIBLU LED DEMONSTRATIONS OCT 2018 · 10/31/2018 · GaN: Mg (p+ cap) GaN: Mg (p-GaN)...
+ 61 2 9334 2300
74 ASQUITH STREET
SILVERWATER, NSW, 2128
AUSTRALIA
EPIBLU LED DEMONSTRATIONS – OCT 2018
RPCVD In-RICH InGaN FOR RGB microLEDs AND LEDs
EL spectra of LEDs with InGaN/GaN MQWs grown using RPCVD
Norm
aliz
ed
Inte
nsity
Wavelength (nm)
For RPCVD the density of active nitrogen is controlled by the plasma parameters.
Unlike MOCVD, where the pyrolysis of NH3 is strongly temperature-dependent, RPCVD can
provide a high density of active nitrogen at low growth temperatures. This facilitates the growth
of InGaN MQWs at higher growth rates and lower temperatures enabling the wavelength to be
pushed beyond green to yellow, amber and towards red emission.
The normalised EL spectra and EL images demonstrate the potential for RPCVD to be used for
long wavelength applications. EL quick test data taken using indium dot contacts.
WWW.EPIBLU.COM [email protected]
BLUE AND GREEN LEDs
RPCVD OR
MOCVD
MOCVD MQW Structure
Green and blue partial LED structures grown by BluGlass using MOCVD. The partial LEDs were then completed by overgrowing with p-GaN using MOCVD and RPCVD for comparison. The electroluminescence of the MOCVD and RPCVD LEDs were measured using LED quick test with indium dot contacts.
Blue LED using RPCVD p-GaN
The efficiency for the LED grown using RPCVD p-GaN was comparable to the LED grown using MOCVD p-GaN.
Green LED using RPCVD p-GaN
The improvement in efficiency for the Green LED using RPCVD is partly attributed to a reduction in thermal
damage to the In-rich InGaN QWs during the low temperature growth of the pGaN layers and to the high quality
of the RPCVD pGaN.
EBL
InGaN/GaN MQW
GaN:Si
u-GaN buffer
Sapphire
GaN: Mg (p+ cap)
GaN: Mg (p-GaN)
+ 61 2 9334 2300
74 ASQUITH STREET
SILVERWATER, NSW, 2128
AUSTRALIA WWW.EPIBLU.COM [email protected]
RPCVD pGaN: OVERGROWN ON COMMERCIAL PARTIAL GREEN LED (on PSS)
BluGlass RPCVD pGaN overgrown on
commercial partial green LED wafer.
This was processed with 45 mil chip pattern,
100 nm thick ITO for current spreading, metal
pad size at 100 m, p and n metallisation
contacts both with Cr/Al/Pt/Au alloy. The EL
was measured in an integrated sphere
(processed and characterised externally).
Top: Packaged green LED Bottom: EL image of 45 mil chip
EBL
InGaN/GaN MQW
GaN:Si
u-GaN buffer
PSS
GaN: Mg (p+ cap)
GaN: Mg (p-GaN)
RPCVD OR
MOCVD
MOCVD MQW Structure
RPCVD AlN NUCLEATION LAYER: ON PSS FOR LEDs
Additional information on specialist nitride development and characterisation services as well as specific nitride device development services can be arranged to meet your individual requirements, please contact us for more information.
An RPCVD AlN nucleation layer was grown on 100mm PSS.
These wafers were then overgrown with MOCVD Blue LED structures, using the RPCVD AlN layer
as the nucleation layer.
+ 61 2 9334 2300
74 ASQUITH STREET
SILVERWATER, NSW, 2128
AUSTRALIA
Regrowth interface
RPCVD
MOCVD Blue LED
