Electronic Devices_Basic Electronic Devices and Circuits (EE)_Junction Diode Characteristics

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s1578 EngineerinSemester IBasic Electsc37503s1578 EngineerinSemester IBasic Electsc37503s1578 EngineerinSemester IBasic Electsc37503s1578 EngineerinSemester IBasic Electsc37503s1578 EngineerinSemester IBasic Electsc37503s1578 EngineerinSemester IBasic Electsc37503s1578 EngineerinSemester IBasic Electsc37503s1578 EngineerinSemester IBasic Electsc37503s1578 EngineerinSemester IBasic Electsc37503s1578 EngineerinSemester IBasic Electsc37503

s1578 EngineerinSemester IBasic Electsc37503s1578 EngineerinSemester IBasic Electsc37503


s1578 EngineerinSemester IBasic Electsc37503s1578 EngineerinSemester IBasic Electsc37503s1578 EngineerinSemester IBasic Electsc37503s1578 EngineerinSemester IBasic Electsc37503

s1578 EngineerinSemester IBasic Electsc37503

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s1578 EngineerinSemester IBasic Electsc37503s1578 EngineerinSemester IBasic Electsc37503s1578 EngineerinSemester IBasic Electsc37503s1578 EngineerinSemester IBasic Electsc37503s1578 EngineerinSemester IBasic Electsc37503







s1578 EngineerinSemester IBasic Electsc37505s1578 EngineerinSemester IBasic Electsc37505s1578 EngineerinSemester IBasic Electsc37505s1578 EngineerinSemester IBasic Electsc37505s1578 EngineerinSemester IBasic Electsc37505s1578 EngineerinSemester IBasic Electsc37505s1578 EngineerinSemester IBasic Electsc37505


s1578 EngineerinSemester IBasic Electsc37507s1578 EngineerinSemester IBasic Electsc37507s1578 EngineerinSemester IBasic Electsc37507



s1578 EngineerinSemester IBasic Electsc37507s1578 EngineerinSemester IBasic Electsc37507s1578 EngineerinSemester IBasic Electsc37507s1578 EngineerinSemester IBasic Electsc37507s1578 EngineerinSemester IBasic Electsc37507s1578 EngineerinSemester IBasic Electsc37507s1578 EngineerinSemester IBasic Electsc37507s1578 EngineerinSemester IBasic Electsc37507



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s1578 EngineerinSemester IBasic Electsc57251s1578 EngineerinSemester IBasic Electsc57251s1578 EngineerinSemester IBasic Electsc57251s1578 EngineerinSemester IBasic Electsc57251s1578 EngineerinSemester IBasic Electsc57251s1578 EngineerinSemester IBasic Electsc57251s1578 EngineerinSemester IBasic Electsc57251

s1578 EngineerinSemester IBasic Electsc57251s1578 EngineerinSemester IBasic Electsc57251s1578 EngineerinSemester IBasic Electsc57251s1578 EngineerinSemester IBasic Electsc57251s1578 EngineerinSemester IBasic Electsc57258s1578 EngineerinSemester IBasic Electsc57258s1578 EngineerinSemester IBasic Electsc57258s1578 EngineerinSemester IBasic Electsc57260s1578 EngineerinSemester IBasic Electsc57260s1578 EngineerinSemester IBasic Electsc57260s1578 EngineerinSemester IBasic Electsc57260s1578 EngineerinSemester IBasic Electsc57260s1578 EngineerinSemester IBasic Electsc57262s1578 EngineerinSemester IBasic Electsc37507s1578 EngineerinSemester IBasic Electsc56977s1578 EngineerinSemester IBasic Electsc56977s1578 EngineerinSemester IBasic Electsc56977s1578 EngineerinSemester IBasic Electsc56977

chapter name sctid

Characteristics of Diode sct115678Characteristics of Diode sct115678Characteristics of Diode sct115678Characteristics of Diode sct115678Characteristics of Diode sct115678Characteristics of Diode sct115678Characteristics of Diode sct115678Characteristics of Diode sct115678Characteristics of Diode sct115678Characteristics of Diode sct115678

Characteristics of Diode sct115680Characteristics of Diode sct115680

Characteristics of Diode sct115680Characteristics of Diode sct115680

Characteristics of Diode sct115680Characteristics of Diode sct115680Characteristics of Diode sct115680Characteristics of Diode sct115680

Characteristics of Diode sct115680

chapter content

Characteristics of Diode sct115680Characteristics of Diode sct115680Characteristics of Diode sct115680Characteristics of Diode sct115680Characteristics of Diode sct115680

Diode Capacitances sct115682Diode Capacitances sct115682Diode Capacitances sct115682Diode Capacitances sct115682Diode Capacitances sct115682

Diode Capacitances sct115682

Diode Capacitances sct115682Diode Capacitances sct115682Diode Capacitances sct115682Diode Capacitances sct115682




Diode Capacitances sct115682Diode Capacitances sct115682Diode Capacitances sct115682Diode Capacitances sct115682Diode Capacitances sct115682Diode Capacitances sct115682Diode Capacitances sct115682

Light Emitting and Liquid Crystal Diode sct115688Light Emitting and Liquid Crystal Diode sct115688

Light Emitting and Liquid Crystal Diode sct115688Light Emitting and Liquid Crystal Diode sct115688Light Emitting and Liquid Crystal Diode sct115688

Light Emitting and Liquid Crystal Diode sct115688Light Emitting and Liquid Crystal Diode sct115688Light Emitting and Liquid Crystal Diode sct115688Light Emitting and Liquid Crystal Diode sct115688Light Emitting and Liquid Crystal Diode sct115688

Light Emitting and Liquid Crystal Diode sct115694Light Emitting and Liquid Crystal Diode sct115694Light Emitting and Liquid Crystal Diode sct115694Light Emitting and Liquid Crystal Diode sct115694Light Emitting and Liquid Crystal Diode sct115694Light Emitting and Liquid Crystal Diode sct115694Light Emitting and Liquid Crystal Diode sct115694Light Emitting and Liquid Crystal Diode sct115694Light Emitting and Liquid Crystal Diode sct115694Light Emitting and Liquid Crystal Diode sct115694

Light Emitting and Liquid Crystal Diode sct197992Light Emitting and Liquid Crystal Diode sct197992Light Emitting and Liquid Crystal Diode sct197992Light Emitting and Liquid Crystal Diode sct197992Light Emitting and Liquid Crystal Diode sct197992Light Emitting and Liquid Crystal Diode sct197992Light Emitting and Liquid Crystal Diode sct197992Light Emitting and Liquid Crystal Diode sct197992

Light Emitting and Liquid Crystal Diode sct197992Light Emitting and Liquid Crystal Diode sct197992

Types of Special Diodes sct197411


Types of Special Diodes sct197411Types of Special Diodes sct197411Types of Special Diodes sct197411

Types of Special Diodes sct197411Types of Special Diodes sct197411






Types of Special Diodes sct197413Types of Special Diodes sct197413Types of Special Diodes sct197413Types of Special Diodes sct197413Types of Special Diodes sct197413Types of Special Diodes sct197413


Types of Special Diodes sct213610Types of Special Diodes sct213610Types of Special Diodes sct213610


Types of Special Diodes sct213610Types of Special Diodes sct213610Types of Special Diodes sct213610Types of Special Diodes sct213610Types of Special Diodes sct213610Types of Special Diodes sct213610Types of Special Diodes sct213610Types of Special Diodes sct213610Types of Special Diodes sct213610Types of Special Diodes sct213610



Types of Special Diodes sct213610Types of Special Diodes sct213610Types of Special Diodes sct213610Types of Special Diodes sct213610Types of Special Diodes sct213610

Types of Special Diodes sct327146Types of Special Diodes sct327146Types of Special Diodes sct327146Types of Special Diodes sct327146

Bonding Forces and Charge Carriers sct197968Bonding Forces and Charge Carriers sct197968Bonding Forces and Charge Carriers sct197968Bonding Forces and Charge Carriers sct197968Bonding Forces and Charge Carriers sct197968Bonding Forces and Charge Carriers sct197968Bonding Forces and Charge Carriers sct197968Bonding Forces and Charge Carriers sct197968Bonding Forces and Charge Carriers sct197968Bonding Forces and Charge Carriers sct197968

Introduction to Excess Carriers in Semiconductors sct197972Introduction to Excess Carriers in Semiconductors sct197972Introduction to Excess Carriers in Semiconductors sct197972Introduction to Excess Carriers in Semiconductors sct197972Introduction to Excess Carriers in Semiconductors sct197972Introduction to Excess Carriers in Semiconductors sct197972Introduction to Excess Carriers in Semiconductors sct197972Introduction to Excess Carriers in Semiconductors sct197972Introduction to Excess Carriers in Semiconductors sct197972Introduction to Excess Carriers in Semiconductors sct197972

Introduction to Excess Carriers in Semiconductors sct197972Introduction to Excess Carriers in Semiconductors sct197972Introduction to Excess Carriers in Semiconductors sct197972

Introduction to Excess Carriers in Semiconductors sct197972Introduction to Excess Carriers in Semiconductors sct197972Introduction to Excess Carriers in Semiconductors sct197972Introduction to Excess Carriers in Semiconductors sct197972Introduction to Excess Carriers in Semiconductors sct197972Introduction to Excess Carriers in Semiconductors sct197972Introduction to Excess Carriers in Semiconductors sct197972

Introduction to Excess Carriers in Semiconductors sct197974Introduction to Excess Carriers in Semiconductors sct197974Introduction to Excess Carriers in Semiconductors sct197976Introduction to Excess Carriers in Semiconductors sct197976Optoelectronic Devices and Materials sct197994Optoelectronic Devices and Materials sct197994Optoelectronic Devices and Materials sct197994Negative Conductance Microwave Devices sct197998Negative Conductance Microwave Devices sct198001Negative Conductance Microwave Devices sct198001Negative Conductance Microwave Devices sct198001Negative Conductance Microwave Devices sct198001Four Layer Power Devices sct198004Light Emitting and Liquid Crystal Diode sct197992Types of Special Diodes sct213610Types of Special Diodes sct213610Types of Special Diodes sct213610Types of Special Diodes sct213612

sstid sub topic name sub topic content Category

Volt-Ampere Characterscts677912Terminal Characteristics oTerminal Characteristics of Junction DiodPracticeVolt-Ampere Characterscts677912Terminal Characteristics oTerminal Characteristics of Junction DiodPracticeVolt-Ampere Characterscts677912Terminal Characteristics oTerminal Characteristics of Junction DiodPracticeVolt-Ampere Characterscts677912Terminal Characteristics oTerminal Characteristics of Junction DiodPracticeVolt-Ampere Characterscts677912Terminal Characteristics oTerminal Characteristics of Junction DiodPracticeVolt-Ampere Characterscts677912Terminal Characteristics oTerminal Characteristics of Junction DiodPracticeVolt-Ampere Characterscts677912Terminal Characteristics oTerminal Characteristics of Junction DiodPracticeVolt-Ampere Characterscts677912Terminal Characteristics oTerminal Characteristics of Junction DiodPracticeVolt-Ampere Characterscts677912Terminal Characteristics oTerminal Characteristics of Junction DiodPracticeVolt-Ampere Characterscts677912Terminal Characteristics oTerminal Characteristics of Junction DiodPractice

V-I Characteristics Eq scts447591DC Load Line Explain the DC load line concept of a diodePracticeV-I Characteristics Eq scts447591DC Load Line Explain the DC load line concept of a diodePractice

V-I Characteristics Eq scts447591DC Load Line Explain the DC load line concept of a diodePracticeV-I Characteristics Eq scts447591DC Load Line Explain the DC load line concept of a diodePractice

V-I Characteristics Eq scts447591DC Load Line Explain the DC load line concept of a diodePracticeV-I Characteristics Eq scts447591DC Load Line Explain the DC load line concept of a diodePracticeV-I Characteristics Eq scts447591DC Load Line Explain the DC load line concept of a diodePracticeV-I Characteristics Eq scts447591DC Load Line Explain the DC load line concept of a diodePractice

V-I Characteristics Eq scts447591DC Load Line Explain the DC load line concept of a diodePractice

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topic content

V-I Characteristics Eq scts447591DC Load Line Explain the DC load line concept of a diodePractice

V-I Characteristics Eq scts447594AC Equivalent Circuits Explain the AC equivalent circuit model of Practice

V-I Characteristics Eq scts447594AC Equivalent Circuits Explain the AC equivalent circuit model of Practice

V-I Characteristics Eq scts447594AC Equivalent Circuits Explain the AC equivalent circuit model of PracticeV-I Characteristics Eq scts447594AC Equivalent Circuits Explain the AC equivalent circuit model of PracticeV-I Characteristics Eq scts447594AC Equivalent Circuits Explain the AC equivalent circuit model of PracticeV-I Characteristics Eq scts447594AC Equivalent Circuits Explain the AC equivalent circuit model of Practice

V-I Characteristics Eq scts447594AC Equivalent Circuits Explain the AC equivalent circuit model of PracticeV-I Characteristics Eq scts447594AC Equivalent Circuits Explain the AC equivalent circuit model of PracticeV-I Characteristics Eq scts447594AC Equivalent Circuits Explain the AC equivalent circuit model of PracticeV-I Characteristics Eq scts447594AC Equivalent Circuits Explain the AC equivalent circuit model of Practice

V-I Characteristics Eq scts605998Diode As a Circuit ElementGive an introduction to basic diode circuiPracticeV-I Characteristics Eq scts605998Diode As a Circuit ElementGive an introduction to basic diode circuiPracticeV-I Characteristics Eq scts605998Diode As a Circuit ElementGive an introduction to basic diode circuiPracticeV-I Characteristics Eq scts605998Diode As a Circuit ElementGive an introduction to basic diode circuiPractice

V-I Characteristics Eq scts605998Diode As a Circuit ElementGive an introduction to basic diode circuiPractice

V-I Characteristics Eq scts605998Diode As a Circuit ElementGive an introduction to basic diode circuiPracticeV-I Characteristics Eq scts605998Diode As a Circuit ElementGive an introduction to basic diode circuiPracticeV-I Characteristics Eq scts605998Diode As a Circuit ElementGive an introduction to basic diode circuiPracticeV-I Characteristics Eq scts605998Diode As a Circuit ElementGive an introduction to basic diode circuiPracticeV-I Characteristics Eq scts605998Diode As a Circuit ElementGive an introduction to basic diode circuiPractice

Diode Capacitances scts174230Diode Resistance (Static Explain the Diode Resistance (Static and PracticeDiode Capacitances scts174230Diode Resistance (Static Explain the Diode Resistance (Static and PracticeDiode Capacitances scts174230Diode Resistance (Static Explain the Diode Resistance (Static and PracticeDiode Capacitances scts174230Diode Resistance (Static Explain the Diode Resistance (Static and PracticeDiode Capacitances scts174230Diode Resistance (Static Explain the Diode Resistance (Static and Practice

Diode Capacitances scts174230Diode Resistance (Static Explain the Diode Resistance (Static and Practice

Diode Capacitances scts174230Diode Resistance (Static Explain the Diode Resistance (Static and PracticeDiode Capacitances scts174230Diode Resistance (Static Explain the Diode Resistance (Static and PracticeDiode Capacitances scts174230Diode Resistance (Static Explain the Diode Resistance (Static and PracticeDiode Capacitances scts174230Diode Resistance (Static Explain the Diode Resistance (Static and Practice

Diode Capacitances scts174232Calculation of Diode Resis Explain the Calculation of Diode Resistan Practice



Diode Capacitances scts174232Calculation of Diode Resis Explain the Calculation of Diode Resistan PracticeDiode Capacitances scts174232Calculation of Diode Resis Explain the Calculation of Diode Resistan PracticeDiode Capacitances scts174232Calculation of Diode Resis Explain the Calculation of Diode Resistan PracticeDiode Capacitances scts174232Calculation of Diode Resis Explain the Calculation of Diode Resistan PracticeDiode Capacitances scts174232Calculation of Diode Resis Explain the Calculation of Diode Resistan PracticeDiode Capacitances scts174232Calculation of Diode Resis Explain the Calculation of Diode Resistan PracticeDiode Capacitances scts174232Calculation of Diode Resis Explain the Calculation of Diode Resistan Practice

Introduction to LED scts582634Emerging Display TechnoloDescribe in detail about the different emePracticeIntroduction to LED scts582634Emerging Display TechnoloDescribe in detail about the different emePractice

Introduction to LED scts582634Emerging Display TechnoloDescribe in detail about the different emePracticeIntroduction to LED scts582634Emerging Display TechnoloDescribe in detail about the different emePracticeIntroduction to LED scts582634Emerging Display TechnoloDescribe in detail about the different emePractice

Introduction to LED scts582634Emerging Display TechnoloDescribe in detail about the different emePracticeIntroduction to LED scts582634Emerging Display TechnoloDescribe in detail about the different emePracticeIntroduction to LED scts582634Emerging Display TechnoloDescribe in detail about the different emePracticeIntroduction to LED scts582634Emerging Display TechnoloDescribe in detail about the different emePracticeIntroduction to LED scts582634Emerging Display TechnoloDescribe in detail about the different emePractice

Photodiode scts605995Photovoltaic Effect Write short note on photovoltaic effect PracticePhotodiode scts605995Photovoltaic Effect Write short note on photovoltaic effect PracticePhotodiode scts605995Photovoltaic Effect Write short note on photovoltaic effect PracticePhotodiode scts605995Photovoltaic Effect Write short note on photovoltaic effect PracticePhotodiode scts605995Photovoltaic Effect Write short note on photovoltaic effect PracticePhotodiode scts605995Photovoltaic Effect Write short note on photovoltaic effect PracticePhotodiode scts605995Photovoltaic Effect Write short note on photovoltaic effect PracticePhotodiode scts605995Photovoltaic Effect Write short note on photovoltaic effect PracticePhotodiode scts605995Photovoltaic Effect Write short note on photovoltaic effect PracticePhotodiode scts605995Photovoltaic Effect Write short note on photovoltaic effect Practice

Photoconductors scts274748Avalanche Photodiode Explain the phenomenon of avalanche photoPracticePhotoconductors scts274748Avalanche Photodiode Explain the phenomenon of avalanche photoPracticePhotoconductors scts274748Avalanche Photodiode Explain the phenomenon of avalanche photoPracticePhotoconductors scts274748Avalanche Photodiode Explain the phenomenon of avalanche photoPracticePhotoconductors scts274748Avalanche Photodiode Explain the phenomenon of avalanche photoPracticePhotoconductors scts274748Avalanche Photodiode Explain the phenomenon of avalanche photoPracticePhotoconductors scts274748Avalanche Photodiode Explain the phenomenon of avalanche photoPracticePhotoconductors scts274748Avalanche Photodiode Explain the phenomenon of avalanche photoPractice

Photoconductors scts274748Avalanche Photodiode Explain the phenomenon of avalanche photoPracticePhotoconductors scts274748Avalanche Photodiode Explain the phenomenon of avalanche photoPractice

Characteristics of Dio scts272794LED, Photodiode and SchoExplain in detail about the characteristic Practice


Characteristics of Dio scts272794LED, Photodiode and SchoExplain in detail about the characteristic PracticeCharacteristics of Dio scts272794LED, Photodiode and SchoExplain in detail about the characteristic PracticeCharacteristics of Dio scts272794LED, Photodiode and SchoExplain in detail about the characteristic Practice

Characteristics of Dio scts272794LED, Photodiode and SchoExplain in detail about the characteristic PracticeCharacteristics of Dio scts272794LED, Photodiode and SchoExplain in detail about the characteristic Practice


Characteristics of Dio scts272794LED, Photodiode and SchoExplain in detail about the characteristic PracticeCharacteristics of Dio scts272794LED, Photodiode and SchoExplain in detail about the characteristic Practice

Applications of Diodescts272796Varactor, Tunnel and SchoDiscuss about the applications of diodes Practice

Applications of Diodescts272796Varactor, Tunnel and SchoDiscuss about the applications of diodes Practice

Applications of Diodescts272796Varactor, Tunnel and SchoDiscuss about the applications of diodes PracticeApplications of Diodescts272796Varactor, Tunnel and SchoDiscuss about the applications of diodes Practice

Applications of Diodescts272796Varactor, Tunnel and SchoDiscuss about the applications of diodes PracticeApplications of Diodescts272796Varactor, Tunnel and SchoDiscuss about the applications of diodes PracticeApplications of Diodescts272796Varactor, Tunnel and SchoDiscuss about the applications of diodes PracticeApplications of Diodescts272796Varactor, Tunnel and SchoDiscuss about the applications of diodes PracticeApplications of Diodescts272796Varactor, Tunnel and SchoDiscuss about the applications of diodes PracticeApplications of Diodescts272796Varactor, Tunnel and SchoDiscuss about the applications of diodes Practice

Schottky Diodes scts309352Schottky Barrier Diodes Give an introduction to Schottky barrier dPractice

Schottky Diodes scts309352Schottky Barrier Diodes Give an introduction to Schottky barrier dPracticeSchottky Diodes scts309352Schottky Barrier Diodes Give an introduction to Schottky barrier dPracticeSchottky Diodes scts309352Schottky Barrier Diodes Give an introduction to Schottky barrier dPractice

Schottky Diodes scts309352Schottky Barrier Diodes Give an introduction to Schottky barrier dPracticeSchottky Diodes scts309352Schottky Barrier Diodes Give an introduction to Schottky barrier dPracticeSchottky Diodes scts309352Schottky Barrier Diodes Give an introduction to Schottky barrier dPracticeSchottky Diodes scts309352Schottky Barrier Diodes Give an introduction to Schottky barrier dPracticeSchottky Diodes scts309352Schottky Barrier Diodes Give an introduction to Schottky barrier dPracticeSchottky Diodes scts309352Schottky Barrier Diodes Give an introduction to Schottky barrier dPractice

Schottky Diodes scts309354Energy Band and I-V CharacDiscuss about the energy band diagram forPracticeSchottky Diodes scts309354Energy Band and I-V CharacDiscuss about the energy band diagram forPracticeSchottky Diodes scts309354Energy Band and I-V CharacDiscuss about the energy band diagram forPracticeSchottky Diodes scts309354Energy Band and I-V CharacDiscuss about the energy band diagram forPracticeSchottky Diodes scts309354Energy Band and I-V CharacDiscuss about the energy band diagram forPracticeSchottky Diodes scts309354Energy Band and I-V CharacDiscuss about the energy band diagram forPracticeSchottky Diodes scts309354Energy Band and I-V CharacDiscuss about the energy band diagram forPracticeSchottky Diodes scts309354Energy Band and I-V CharacDiscuss about the energy band diagram forPracticeSchottky Diodes scts309354Energy Band and I-V CharacDiscuss about the energy band diagram forPracticeSchottky Diodes scts309354Energy Band and I-V CharacDiscuss about the energy band diagram forPractice

Schottky Diodes scts309356Comparison - Schottky an Compare the Schottky diode with PN juncPracticeSchottky Diodes scts309356Comparison - Schottky an Compare the Schottky diode with PN juncPractice

Schottky Diodes scts309356Comparison - Schottky an Compare the Schottky diode with PN juncPracticeSchottky Diodes scts309356Comparison - Schottky an Compare the Schottky diode with PN juncPracticeSchottky Diodes scts309356Comparison - Schottky an Compare the Schottky diode with PN juncPracticeSchottky Diodes scts309356Comparison - Schottky an Compare the Schottky diode with PN juncPracticeSchottky Diodes scts309356Comparison - Schottky an Compare the Schottky diode with PN juncPracticeSchottky Diodes scts309356Comparison - Schottky an Compare the Schottky diode with PN juncPractice

Schottky Diodes scts309356Comparison - Schottky an Compare the Schottky diode with PN juncPractice

Schottky Diodes scts309356Comparison - Schottky an Compare the Schottky diode with PN juncPractice

Schottky Diodes scts561436Ideal Junction Properties Determine the electrostatic properties ofPracticeSchottky Diodes scts561436Ideal Junction Properties Determine the electrostatic properties ofPracticeSchottky Diodes scts561436Ideal Junction Properties Determine the electrostatic properties ofPracticeSchottky Diodes scts561436Ideal Junction Properties Determine the electrostatic properties ofPracticeSchottky Diodes scts561436Ideal Junction Properties Determine the electrostatic properties ofPractice

Schottky Diodes scts561436Ideal Junction Properties Determine the electrostatic properties ofPracticeSchottky Diodes scts561436Ideal Junction Properties Determine the electrostatic properties ofPractice

Schottky Diodes scts561436Ideal Junction Properties Determine the electrostatic properties ofPracticeSchottky Diodes scts561436Ideal Junction Properties Determine the electrostatic properties ofPractice

Schottky Diodes scts561436Ideal Junction Properties Determine the electrostatic properties ofPractice

Additional Diode Circuscts606009Peak Detector and Digital Discuss in detail about the different appl Practice



Additional Diode Circuscts606009Peak Detector and Digital Discuss in detail about the different appl PracticeAdditional Diode Circuscts606009Peak Detector and Digital Discuss in detail about the different appl PracticeAdditional Diode Circuscts606009Peak Detector and Digital Discuss in detail about the different appl PracticeAdditional Diode Circuscts606009Peak Detector and Digital Discuss in detail about the different appl Practice

Bonding Force and Enscts274683Energy Bands in Solids Explain in detail about the bonding in so PracticeBonding Force and Enscts274683Energy Bands in Solids Explain in detail about the bonding in so PracticeBonding Force and Enscts274683Energy Bands in Solids Explain in detail about the bonding in so PracticeBonding Force and Enscts274683Energy Bands in Solids Explain in detail about the bonding in so PracticeBonding Force and Enscts274683Energy Bands in Solids Explain in detail about the bonding in so PracticeBonding Force and Enscts274683Energy Bands in Solids Explain in detail about the bonding in so PracticeBonding Force and Enscts274683Energy Bands in Solids Explain in detail about the bonding in so PracticeBonding Force and Enscts274683Energy Bands in Solids Explain in detail about the bonding in so PracticeBonding Force and Enscts274683Energy Bands in Solids Explain in detail about the bonding in so PracticeBonding Force and Enscts274683Energy Bands in Solids Explain in detail about the bonding in so Practice

Optical Absorption a scts274693Introduction - Optical Ab Explain the complete process of optical PracticeOptical Absorption a scts274693Introduction - Optical Ab Explain the complete process of optical PracticeOptical Absorption a scts274693Introduction - Optical Ab Explain the complete process of optical PracticeOptical Absorption a scts274693Introduction - Optical Ab Explain the complete process of optical PracticeOptical Absorption a scts274693Introduction - Optical Ab Explain the complete process of optical PracticeOptical Absorption a scts274693Introduction - Optical Ab Explain the complete process of optical PracticeOptical Absorption a scts274693Introduction - Optical Ab Explain the complete process of optical PracticeOptical Absorption a scts274693Introduction - Optical Ab Explain the complete process of optical PracticeOptical Absorption a scts274693Introduction - Optical Ab Explain the complete process of optical PracticeOptical Absorption a scts274693Introduction - Optical Ab Explain the complete process of optical Practice

Optical Absorption a scts561493EHP Generation Rate Explain the process of generation of elec PracticeOptical Absorption a scts561493EHP Generation Rate Explain the process of generation of elec PracticeOptical Absorption a scts561493EHP Generation Rate Explain the process of generation of elec Practice

Optical Absorption a scts561493EHP Generation Rate Explain the process of generation of elec PracticeOptical Absorption a scts561493EHP Generation Rate Explain the process of generation of elec PracticeOptical Absorption a scts561493EHP Generation Rate Explain the process of generation of elec PracticeOptical Absorption a scts561493EHP Generation Rate Explain the process of generation of elec PracticeOptical Absorption a scts561493EHP Generation Rate Explain the process of generation of elec PracticeOptical Absorption a scts561493EHP Generation Rate Explain the process of generation of elec PracticeOptical Absorption a scts561493EHP Generation Rate Explain the process of generation of elec Practice

Carrier Life Time and scts274695Carrier Life Time Write a short note on carrier lifetime an PracticeCarrier Life Time and scts274697Photo Conductivity Explain in detail about photoconductivityPracticeDiffusion of Carriers scts274699Introduction to Diffusion oWrite a short note on the diffusion of carPracticeDiffusion of Carriers scts274701Continuity Equation Derive and explain the continuity equatioPracticeSolar Cells and Light scts274751Light Emitting Materials Explain in detail about the light emitting PracticeSolar Cells and Light scts561496Heterojunction and AmorphWrite short note on heterojunction and aPracticeSolar Cells and Light scts575728Mono-crystalline and Poly-cExplain the manufacturing methods of mono-PracticeTunnel Diode scts274760Degenerate SemiconductoGive an introduction to degenerate semi PracticeGunn Diode and IMP scts274764Gunn Diode Explain briefly about the structure of G PracticeGunn Diode and IMP scts561428Gunn Diode - Negative DiffExplain the concept of negative different PracticeGunn Diode and IMP scts561432IMPATT Diode - Static andExplain static and dynamic characteristi PracticeGunn Diode and IMP scts583009Modes of Operation Explain in detail about different operatio PracticeP-N-P-N Diode and IGscts274771P-N-P-N Diode Draw and explain the PNPN two terminal dePracticePhotoconductors scts274746Construction and WorkingExplain the Working of Practical Mercur PracticeSchottky Diodes scts392650Built-in Potential in Schot Give an introduction to Schottky diode andPracticeSchottky Diodes scts561434Qualitative CharacteristicsExplain the Qualitative characteristics o PracticeSchottky Diodes scts561438Non Ideal Effects on Barri Describe the effects used for altering th PracticeOhmic Contacts scts309358Tunneling and Contact ResExplain the phenomenon of quantum mechaPractice

Cognitive Difficulty l Marks Hint 1 Hint 2 Question

Recall Medium 1 Which types of charge carriers aRecall Easy 1 When PN junction is forward biRecall Easy 1 When PN junction is reverse biaUnderstandMedium 1 In forward characteristics of PNUnderstandMedium 1 In reverse characteristics of PNUnderstandMedium 1 In static V-I characteristic the UnderstandMedium 1UnderstandMedium 1ApplicationEasy 1 Which two electrodes form a PN ApplicationEasy 1 The direction of conventional c

UnderstandMedium 1 If the current gain and collectorUnderstandEasy 1 Where will be the Q point, when

UnderstandMedium 1 If the current gain and collectorUnderstandMedium 1 When the base voltage of the di

UnderstandMedium 1UnderstandMedium 1 How many region are present whiUnderstandMedium 1 If the diode is forward biased, UnderstandMedium 1 The characteristic curve and lo

ApplicationMedium 1 In the given figure and provided

The PN junction diode has Is = 10¯¹⁰A and ɳ=2, If Vᴅ=0.9 V then find the diode current?The PN junction diode has Is = 10¯¹⁸A and ɳ= 1.05 , If Iᴅ= 70 μA then find the diode voltage?

If the base current is 40 × 10⁻⁶ A and current gain is 20, find the emitter current?

UnderstandMedium 1

UnderstandMedium 1

UnderstandMedium 1

ApplicationMedium 1 In the given circuit diagram belApplicationEasy 1 In the figure shown below, the dRecall Medium 1 The inverse of the slope of the VUnderstandMedium 1 The current flowing across P-N j

UnderstandMedium 1 The current flowing across P-N jRecall Medium 1 When the P-N junction diode is rRecall Easy 1 Whether the V-I characteristic oApplicationMedium 1

Recall Easy 1 The number of terminals in a dioApplicationMedium 1 The figure which is shown is knApplicationMedium 1 If the reverse biased voltage becUnderstandMedium 1 When we consider an ideal diode

UnderstandMedium 1 The diode current (Id) and voltag

If the base current is 2 × 10⁻⁶ A and collector current is 40 × 10⁻⁶ A , find the current gain?

A diode has reverse saturation current Is = 10⁻¹⁰ A and non ideality factor η = 2. If diode voltage is 0.9V then diode current is ?

A diode has reverse saturation current Is = 10⁻¹⁰ A and non ideality factor η = 2. If diode has current of 70μA, then diode voltage is ?

Given cut-in voltage of Ge P-N diode is Vᵧ₁ and Si P-N diode is Vᵧ₂ , what is the output when the cut-in voltage increases in Ge and Si?

ApplicationMedium 1 The diode resistance (Rd) and voRecall Easy 1 Which are the majority charge caRecall Easy 1 Which are the majority charge caApplicationMedium 1 In the figure as shown, Vdq versApplicationMedium 1 When the diode is forward biased

Recall Easy 1 Name the two types of capacitanRecall Medium 1 In reverse biased pn junction diRecall Medium 1 In forward biased pn junction diRecall Easy 1 The another name of D.C circuit UnderstandMedium 1 The Dynamic resistance is deriv

UnderstandMedium 1 The diode resistance (Rd) and vo

UnderstandMedium 1 The diode current (Id) and voltagApplicationMedium 1 The Static resistance obeys whicApplicationEasy 1 The signal used in the dynamic rApplicationEasy 1 The signal used in the static resi

UnderstandMedium 1 The current flowing across P-N j



UnderstandMedium 1 The diode current (Id) and voltagApplicationMedium 1 In the given figure, the resistancApplicationMedium 1 In the given figure, the resistancUnderstandMedium 1 A typical forward biased Si diodeUnderstandMedium 1 If the diode is reverse biased witApplicationMedium 1 Find DC resistance of a diode, ifApplicationMedium 1 Find DC resistance of a diode, if

Recall Medium 1 The type of material present in oRecall Medium 1 In order to produce the visible l

ApplicationMedium 1 In the figure shown below, the aRecall Medium 1 The device used to build the DigiApplicationMedium 1 How many color does Digital Mic

ApplicationMedium 1 Which display technology is used ApplicationMedium 1 Each Plasma Display Panels pixelApplicationMedium 1 On which effect does the Field UnderstandMedium 1 The field emission display consistApplicationEasy 1 The abbreviation of CNT-FED TV

Recall Easy 1 The process of converting light UnderstandMedium 1 If the voltage and current of thRecall Medium 1 When the light falls on the surfacRecall Medium 1 In photovoltaic cells, to convertApplicationMedium 1 In photovoltaic, solar cells are cApplicationMedium 1 In photovoltaic solar cell, solar ApplicationMedium 1 The device which is used to measuApplicationMedium 1 The instrument used to measure thApplicationMedium 1 If a frequency of light travellinApplicationMedium 1 The instrument used to measure

UnderstandMedium 1 Avalanche photodiode are essenApplicationDifficult 1 An APD has a quantum efficiency oUnderstandMedium 1UnderstandMedium 1ApplicationMedium 1 when no radiation is incident oUnderstandMedium 1 When avalanche photodiode gain iApplicationMedium 1 The avalanche photodiode has a lApplicationMedium 1 Calculate the responsivity of a

UnderstandMedium 1 consider a commercial Ge pn juncApplicationMedium 1 In optical communication syste

ApplicationMedium 1 Which diode works on the princi

If the responsivity is 0.2 A /W , calculate the photocurrent of the avalanche photodiode if the incident optical power is 4 μW?A photodetector has a quantum efficiency of 80% at 1000 nm. A radiation of optical power is0.01 watt/m at this wavelength is incident on the device, calculate the photon current of the avalanche diode?

ApplicationMedium 1 In the figure shown, which is th

Recall Easy 1 How many types of photo diode ApplicationMedium 1 Which diode is used in high freqUnderstandMedium 1 If the photocurrent and incident

UnderstandMedium 1 In the figure shown, which is thUnderstandMedium 1 What value of series resistor is

UnderstandMedium 1 what is current through the LED i

ApplicationMedium 1 In the figure shown, which is thRecall Easy 1 Which diode has a very small fo

Recall Easy 1 Which diode exhibits negative r

Recall Medium 1

ApplicationMedium 1 In the figure shown, which is thRecall Medium 1 A junction diode which acts as a

The movement of valence electrons from the valence energy band to the conduction band withlittle or no applied forward voltage is called as ….?

ApplicationMedium 1 In the figure shown, which is thApplicationMedium 1 Varactor diode is also called as aUnderstandMedium 1ApplicationMedium 1 Which diode is used in high freqApplicationMedium 1 The schottky diode is used in ….?UnderstandMedium 1 In schottky diode which carriers

Recall Medium 1 The method used to evaluate the

UnderstandMedium 1 Find the value of maximum electrRecall Medium 1 Schottky diode is also called as Recall Medium 1 Among various diodes, schottky ba

ApplicationMedium 1 In the figure shown, which is thApplicationMedium 1 Which metal is used to build theUnderstandMedium 1 From the VI characteristics showApplicationMedium 1 The diode which is used in power Recall Medium 1 The cut-in voltage of schottky Recall Medium 1 Which diode is used in families of

Recall Medium 1 Potential difference between theRecall Medium 1 In p-type material, the barrier hRecall Medium 1 In schottky barrier diode, the dRecall Medium 1 The diode saturation current, Is iApplicationMedium 1 we consider a Schottky barrier jUnderstandMedium 1 The bandbending in the semicondUnderstandMedium 1 What is the consequence of the fUnderstandMedium 1 Find the value of maximum electrRecall Medium 1 Which current is used to obtaineRecall Medium 1 Which diode Is also known as hot carrier diode?

Recall Medium 1 In schottky diode the forward cuRecall Medium 1 In p-n diode the forward current

Recall Medium 1 In schottky diode the temperatRecall Medium 1 In p-n diode the temperature dRecall Medium 1 The cut-in voltage in a schottky Recall Medium 1 The cut-in voltage in a p-n diode Recall Medium 1 In schottky diode what is the swRecall Medium 1 In p-n diode what is the switchi

Recall Medium 1 In schottky diode what is the idea

Recall Medium 1 In p-n diode, the ideality factor

Recall Medium 1 A p-n junction diode is also knowRecall Medium 1 The n-type doping impurity is caRecall Medium 1 The p-type doping impurity is caUnderstandMedium 1 In the figure shown below of p-tUnderstandMedium 1 In n-type material, where does th

UnderstandMedium 1 The built in potential of a p-n juUnderstandMedium 1 In p-type material, where does th

Recall Medium 1 When a reverse bias is applied tUnderstandMedium 1 If the charge of the ideal juncti

Recall Medium 1 When a forward bias is applied d

Recall Medium 1 The peak detector is also calle

UnderstandMedium 1 The condition needed to perform

Recall Medium 1 Why the resistor is used in peak

UnderstandMedium 1 In the figure shown below of pea

UnderstandMedium 1 In peak detector, the dischargin

Recall Medium 1 The discharging time in active pe

ApplicationMedium 1 In a diode, when avalanche breApplicationMedium 1 Avalanche photodiode are essenApplicationMedium 1 An APD has a quantum efficiency oApplicationMedium 1

1111111111

1111111111

111

If the responsivity is 0.2 A /W , calculate the photocurrent of the avalanche photodiode if the incident optical power is 4 μW?

1111111

1111111111111111111111

Solution Option A Comment

There are two types of charge carriers ar Protons and NeutronsWhen PN junction is forward biased then laDecreasesWhen PN junction is reverse biased then laDecreasesWhen the diode is forward biased, as the vEither increase or decreaseWhen the diode is reverse biased, as the Either increase or decreaseIn forward V-I characteristic the point at Breaking point

3.5 MA0.87 V

The diode is formed by combining two elecProton and neutronThe conventional current flows opposite toForward

83 × 10⁻⁶AIf base resistance is open then there is no Middle End

75 × 10⁻⁶ AFrom ohm's law we know voltage is proportiUp

8.4mAThe three region in which diode will work a 2If the diode is forward biased then the co DownwardThe characteristic curve is obtain from th Device and Network

5mA

The diode equation is given by Iᴅ=Is(eᵛᴅ⁄ɳvᵼ-1) = 10‾¹⁰(e ⁹⁄₂₍ ₀₂₅₉₎-1) = 35 mA⁰͘͘��∙ ₀̣̣��The diode equation is given by Iᴅ=Is(eᵛᴅ⁄ɳvᵼ-1), taking log on both sides, we get Vᴅ = ɳvᵼ ln (1 + Iᴅ/Is) = (1.05)(0.0259)ln(1+70 x 10‾⁶/10‾1⁸) = 0.87 V

The collector current is given by Ic = β IbIb = IC/βIb = 2.5m/30Ib = 83 × 10⁻⁶ A

The collector current is given by Ic = β IbIb = IC/βIb = 1.5m/20Ib = 75 × 10⁻⁶ A

The Emitter current is given by, Ie = Ic+ Ib, where as Ic = βIb So Ie = (1+β)Ib = (1 + 20)× 40 × 10⁻⁶Therefore Ie = 0.84mA

From the diagram we can see that V = 5V and R = 1kOhmFrom ohm’s law we know that R =V/II = V/R = 5/1k = 5mAThe current and voltage drop has zero level in both Germanium and silicon, so it is given byIdq = 5mA – 0.7Idq = 4.3mA

10

25mA

0.34V

19.9 sin ωt (μA) & 0.0995 sinωt (V)In P-N junction diode, there are two typesP-typeThe V-I characteristic of the P-N junction Diode Resistance

1ohm

66.66 ohmwhen the P-N junction is forward biased t DecreasesOhm's law states that voltage is directly p Does notIn germanium diode as the cut-in voltage i

The junction formed between the P type an 4Ideal diode is a perfect conductor with ze Full wave rectifierIn reverse biased when the bias voltage i Active regionIn ideal diode condition, when the diode is 1

37.5ohm

the collector current is given by

Ic = β Ib => β = Ic/Ib = 40 × 10⁻⁶/ 2 × 10⁻⁶ = 20

Id=Is (e Vd/ηVt - 1) Id=〖10〗^(-10) ((e^ 0.9)/(2 ×(0.0259) )-1)=35 mA

=(1.05)(0.0259) ln (1+70 ×10-6/10-18 )=0.87V

For AC analysis, we consider only the AC signals and parameters in the circuit and the AC KVL equation becomesVi=id rd+id R=id (rd+R),where rd is again the small signal diode diffusion resistance. rd=Vт/Iᴅq=0.026/0.88=0.0295 kohm The ac diode current is id=Vi/(rd+R)=0.1 sinωt/(0.0295+5)=19.9 sin ωt (μA)The AC component of the output voltage is Vo=id R=0.0995 sinωt (V)

Rac = 26 × 2/60 = 0.87 ohm.

The static resistance is given by Rdc = V/I Rdc=2/(30×10^(-3) )=66.66 ohm

Vᵧ₁ < Vᵧ₂

The static resistance of the diode is given byR = Vd/Id= 0.75/(20×10-3) =37.5ohm

2.8AThe majority charge carriers are maximum nHoleThe majority charge carriers are maximum nHoleThe plot of Vdq versus Idq as shown in theStatic resistanceIn forward biasing condition, in V-I charactExponential

The two types of diode capacitance in p-n Transition & Static capacitance.In reverse biased pn junction diode, the deDiffusion Capacitance.In forward biased pn junction diode, the dDiffusion Capacitance.Static resistance of a p-n junction diode i Dynamic Resistance Dynamic resistance is derived from the s Shockley's diode equation

3.2A

0.43 ohmThe static resistance obeys the ohms law beKirchoff's lawThe signal used in the dynamic resistance D.C signalThe signal used in the static resistance is D.C signal

1ohm

1.3 ohm

13.33 ohm

The current of the diode is given byRd = Vd/Id=>Id=Vd/Rd= 0.84/(30)=28mA

The current of the diode is given byRd = Vd/Id=>Id=Vd/Rd= 0.64/(20)=32mA

The static resistance of the diode is given byR = Vd/Id= 0.65/(15×10-3)=43.3ohm

The dynamic resistance is given by Rac = 26η/I where η=2 for silicon diodeRac = 26 × 2/50 = 1.04 ohm.

The dynamic resistance is given by Rac = 26η/I where η=1 for germanium diodeRac = 26 × 1/20 = 1.3 ohm.

The static resistance is given by Rdc = V/I Rdc=2/(15×10-3) = 133.33 ohm

3.75ohmIt is a DC resistance, and it is defined as t AC ResistanceThe resistance at Q -point is the dynamic Diode Equation

7Ω1M Ω25ohm0.0125M ohm

The light-emitting organic material sandwCathode and anodeThe wavelength of the light generated is d1.2 to 1.5 eV

Light ouputAnalog Micromirror Device

When the on/off states of each mirror are 5 Million colours

The static resistance of the diode is given byR = Vd/Id= 0.75/(25×10^(-3) )=30ohm

The static resistance of the diode (in forward direction)=0.7V/100mA =7Ωresistance (in the reverse direction)=10V/1μA=10M ΩRdc = 0.3/0.0115 = 26.09 ohmRdc = 0.3/2.4μ = 0.125M ohm

The structure of a basic SMOLED contains multiple layers of organic material.Depending on the organic chemicals that are used to generate the display, different manufacturing techniques can be used.The p-type layer, known as the anode, is made from a high work function material such as indium tin oxide (ITO) – known for its conductive and transparent properties. The next layer is an organic material which aids in the transportation of holes known as normal-propyl bromide (NPB). The arrow showing downward is the output light from the material to view its contents in display.The structure of a basic SMOLED contains multiple layers of organic material. Depending on the organic chemicals that are used to generate the display, different manufacturing techniques can be used.The p-type layer, known as the anode, is made from a high work function material such as indium tin oxide (ITO) – known for its conductive and transparent properties. The next layer is an organic material which aids in the transportation of holes known as normal-propyl bromide (NPB). The arrow showing downward is the output light from the material to view its contents in display.This device, known as a Digital Micromirror Device (DMD chip), is essentially a very precise light switchthat can digitally modulate light through the use of 2 million hinge-mounted microscopic mirrors arranged in a rectangular array; each of these micromirrors are less than 10 microns(approximately one-fifth the width of a human hair).

Light Emitting DiodeEach Plasma Display Panels pixel is mainlyRed, Yellow and WhiteThe foundation of Field Emission technologCapacitive effect

MicrotipsCathode Nanotube Field Emission Televisio

Photovoltaic (photo = light; voltaic = prod Photoconductive0.491W

Electrons are generated, when sunlight or iPhotonsUsing photovoltaic cells (also called solar DiodeLarge number of solar cells are used to co IronPhotovoltaic (photo = light; voltaic = prod ElectricityPyranometer is an instrument used for measGalvanometerA pyrheliometer is an instrument used to mPyrheliometer

12eVAn anemometer is an instrument used forLight speed

Avalanche photodiode are essentially p-n phForward BiasɌ = η qλ/hc = 0.2 A/W, Hence, with multipl0.2 A/W

80μA6.44 × 10⁻⁹A

Source of noise in a detector is thermal f Dark NoiseAs APD gain increases, the output signal inExcess Noise

3.48 eV4.0 mA / W

0.685 W m-2In optical communication system there wilSpeed

Photo means light and diode means a device Schottky diode

Plasma displays are noted for their flat screen presentation and large screen sizes. They are able to generate excellent image quality in large scales, and consequently are the leading display technology when it comes to HDTV (high definition television)

where red, blue, and green phosphors were struck, and as a result emit light throughthe glass display.subpixels where the combination of these subpixels allows for the intense colourmanipulation found in CRTs.

The power is given by P = V × I = 4.934 × 0.100 = 0.491W

The color of light is related to its frequency. The frequency of light is related to its energy by this formula, E = h × f = hc/λ = 1240/20 = 62eV

The responsivity is given by, Ɍ = Iph/Po => Iph = 0.2A/W × 4 μW = 8 μAThe input power is Po = 0.01 × 10⁻⁶ = 10⁻⁸ and the photonic current is given by, Iph = η Poqλ/hc = 6.44 × 10⁻⁹A

The light energy E (eV) is given by λ = 1240/E (nm) => E = 1240/λ = 1240/500nm = 2.48 eVJ/(6.63x10^-34 J s x 3x108 m/s)= 4.0 mA / W

Given, photocurrent Iph = Id = 0.5 μA = 0.5×10-6 A and area, A = 1×10-6 m2, The incident optical power, At l = 1550 nm, Po = Iph/R = (0.5×10-6 A)/(0.73 A W-1) = 6.85 × 10-7 W Light intensity, Io = P0/A = (6.85 ×10-7 W)/(1×10-6 m2) = 0.685 W m-2 or 0.0685 mW cm-2.

2Normal PN junction photo diode is used inPN Diode

6.7 A/W

420 ohm

59.1 A

The semiconductor composition of a SchottkSchottky diode

A tunnel diode is a pn junction that exhib Schottky diode

The movement of valence electrons from th

PN junction

A junction diode which acts as a variable cSchottky diode

Photo diode has two terminals anode and cathode with the arrows indicating that the light rays falling on photo diode reflecting its significance as a photo detector.

There are mainly three types of photo diodes,(1)PN junction photo diode(2)Avalanche photo diode(3)PIN photo diode

Given, photocurrent Iph = 20A and Incident power Po = 30W, Responsivity is given by R = Iph/Po = 20/30 = 0.66 A/W.

The light emitting diode or LED is one of the most popular types of diode. When forward biased with current flowing through the junction, light is produced.Series Resistor is given by, Rs = Vs-Vd/If, Given Vs = 10V, Vd = 1.6V, If = 20mA, submitting this values in the above equation we get, Rs = 10 - 1.6/20 ×10^-3 = 420 ohm

Current through LED is given by If = Vs-Vd/Rs

Given Vs = 15V, Vd = 2V, Rs = 2.2kohm=2.2 × 103 ohm

If = 15 – 2 / 2.2 × 103 = 5.91 mA

This type of diode has a lower forward voltage drop than ordinary silicon PN junction diodes. At low currents the drop may be somewhere between 0.15 and 0.4 volts as opposed to 0.6 volts for a silicon diode.

A tunnel diode is a pn junction that exhibits negative resistance between two values of forward voltage (i.e., between peak-point voltage and valley-point voltage).

The total junction capacitance can be chanVoltage-controlled capacitor503.3 Hz

Schottky diode are used in high frequency Schottky diodeSchottky diodes are majority carrier devi Fast switching circuitsSchottky diodes are majority carrier devi Minority carriers

Electrical Behavior of Schottky barrier ca Inductance

1.3 x 10^5 V/m

The Schottky diode is what is called a maj Minority carrier deviceA Schottky barrier diode is also called as Zener diode

The typical metals used in the manufacturGermaniumThe VI characteristics of Schottky barrier PN junction diodeThe schottky barrier diode is also used in Schottky barrier diodeThe cut-in voltage is very small around 0. MediumSchottky barrier diodes are used in bipolarTunnel diode

Electron concentrationFor p-type material, the barrier height is Difference between valence band edge and The work function is equal to the differen Barrier HeightThe diode saturation current, Is, is typica LargerThe thermionic emission theory on the othHole injection from the metal into the semVbi is called the built-in voltage, in ana The Schottky barrier heightThere is no diffusion capacitance associat Barrier Height is smaller than band gap

1.3 x 10^5 V/mThe reverse bias current can be used to deForward current

Which diode Is also known as hot carrier diode? Schottky diode

A junction diode which acts as a variable capacitor under changing reverse bias is known as a varactor diode. When a pn junction is formed, depletion layer is created in the junction area. Since there are no charge carriers within the depletion zone, the zone acts as an insulator. The p-type material with holes (considered positive) as majority carriers and n-type material with electrons (−ve charge) as majority carriers act as charged plates.

fr=1/(2π × √1×〖10〗^(-3)×100×〖10

Ec-Ef = 0.026×ln(2.8 × 10^19/10^17) = 0.146 eV.Vbi = φB – (Ec-Ef) = 0.554 VEmax = 1.3 × 10^5 V/m

A Schottky barrier diode is a two terminal device with metal terminal acting as anode and semiconductor terminal acting as anode.

The barrier height, φB, is defined as the potential difference between the Fermi energy of the metal and the band edge where the majority carriers reside.

Emax = 1.3 × 10^5 V/m

The thermionic emission theory assumes thaThermionic Emission (Majority carrier transThe number of minority carriers is more in Thermionic Emission (Majority carrier trans

Strong

Reverse current due to minority carriers dStrongThe cut-in voltage is very small around 0. StrongThe cut-in voltage is very small around 0. Strong

LowSwitching speed limited by the recombinatiLow

The current-voltage (I-V) characteristics of Schottky contacts grown by thermal evaporated indium on a p type chemically cleaned silicon <;100> crystalline materials have been measured over the temperature range of 120-360K. Their analysis based on the thermionic emission theory (TE) has revealed that an abnormal decreases of zero bias barrier heights and increase ideality factor at lower temperatures. The temperature dependent ideality factors which is a non- physical parameter are extracted and their correlation show that the interface imperfection with the average value of zero bias barrier height and the standard deviation σ. So Reverse current only due to majority carriers that overcome the barrier (less temperature dependent).

High switching speed, because of majority carrier transport. No recombination time needed!

1.2 -2.0

1.2 -2.0

Majority carrier device

The n-type doping impurity is called the donElectronsThe p-type doping impurity is called the accElectrons In the figure shown below of p-type materConduction bandIn n-type material, the majority charge ca Near valance band

Ideality factor about 1 - no recombination in depletion layer. The ideality factor n typically varies from 1 to 2 (though can in some cases be higher), depending on the fabrication process and semiconductor material and is set equal to 1 for the case of an "ideal" diode (thus the n is sometimes omitted). The ideality factor was added to account for imperfect junctions as observed in real transistors. The factor mainly accounts for carrier recombination as the charge carriers cross the depletion region.

The ideality factor of a diode is a measure of how closely the diode follows the ideal diode equation. The derivation of the simple diode equation uses certain assumption about the cell. In practice, there are second order effects so that the diode does not follow the simple diode equation and the ideality factor provides a way of describing them.So Ideality factor about 1.2-2.0 due to recombination in depletion layer in p-n diode.

A p-n junction diode is known as a minority carrier device since the current conduction is controlled by the diffusion of minority carriers (i.e., electrons in the p region and holes in the n region) in a p-n junction diode.

Vbi=kT/q ln NaNd/ni^2

In p-type material, the majority charge ca Near valance band

Decreases

The capacitance of the ideal junction is gi 1F

Decreases

Full wave rectifier

CRd < T/10 & CRd < 10T

For proper circuit operation

The built in potential of a p-n junction diode is given by Vbi=kT/q ln NaNd/ni^2

Vt = KT -> voltage equivalent of temperature, q -> charge, Na & Nd -> Concentration of acceptor and donor atoms and ni is the intrinsic concentration.

When a reverse bias is applied to p-n junction diode, the depletion region width, W, increases. This cause an increase in the number of the uncovered space charge in depletion region.

when a forward bias is applied depletion region width of the p-n junction diode decreases so the amount of the uncovered space charge decreases as well.

when AC voltage is applied to the peak detector, the capacitance gets charged to the peak of input and diode conducts only for the positive half cycle and the peak detector is also called as half wave rectifier by adding a filter capacitor at output of the circuit.

The circuit operate in the forward bias when AC is applied and the capacitor gets charged to the peak of the input and capacitor gets discharged, when the supplied is removed, circuit becomes reverse bias and no current flows in the circuit. So the charging and discharging of RC is given by CRd < T/10 & CRd > 10T.

When the supplied is removed there will excessive leakage of current takes place so prevent this excessive current we use resistor in op-amp.

Reversing diode D1

100Hz

Equal to period

In the figure above shown D1 and D2 are the two diodes and Vin is the input signal and to find negative peaks of the input signals we need to reverse the diodes D1 and D2.

The circuit operate in the forward bias when AC is applied and the capacitor gets charged to the peak of the input and capacitor gets discharged, when the supplied is removed, circuit becomes reverse bias and no current flows in the circuit. So the charging and discharging of RC is given by CRd < T/10 & CRd > 10T, By substituting the given discharging time 10ms in the above equation, we get the lowest frequency 1kHz.

The circuit operate in the forward bias when AC is applied and the capacitor gets charged to the peak of the input and capacitor gets discharged, when the supplied is removed, circuit becomes reverse bias and no current flows in the circuit. So the charging and discharging of RC is given by CRd < T/10 & CRd > 10T. The discharging time in active peak detector is much longer than the period.

Reverse bias exceeds set value

Avalanche photodiode are essentially p-n phForward BiasɌ = η qλ/hc = 0.2 A/W, Hence, with multipl0.2 A/W

80μA

The minority carriers, under reverse biased conditions, flowing through the junction acquires a kinetic energy, which increases with the increase in reverse voltage. At a sufficiently high reverse voltage (say 5v or more), the kinetic energy of minority carriers becomes so large that they knock out electrons from the covalent bonds of the semiconductor material. As a result of collision, the liberated electrons in turn liberate more electrons and the current becomes very large leading the breakdown of the crystal structure itself. This phenomenon is called AvalancheBreakdown.

The responsivity is given by, Ɍ = Iph/Po => Iph = 0.2A/W × 4 μW = 8 μA

Option B Comment Option C Comment

Electrons and Protons Electrons and HolesIncrease NilIncrease NilSame DecreasesSame DecreasesReverse point Forward point35 MA 35 mA8.7 V 8 VCathode and Anode CathodeReverse Opposite

83A 8.33 mALower End Upper End

75A 7.33 mADown Both A & B

84mA 0.84mA3 1

Zero Both A and DNetwork and Device Device and Quiescent Point

4.3mA 4.3A

30 20

30mA 35mA

0.87V 2V

18.9 sin ωt (μA) & 0.995 sinωt (V) 17.9 sin ωt (μA) & 1.995 sinωt (V)N-type P-N junction diodeDynamic or AC Resistance Resistance1.8ohm 0.87 ohm

64.5 ohm 65.6 ohmIncreases Narrow Does obey

3 2Half wave rectifier Zener DiodeReverse-Breakdown region Cut-off region

2 0

0.0375ohm 40ohm

Vᵧ₁ > Vᵧ₂ Vᵧ₁ = Vᵧ₂

0.28A 20AElectron ProtonElectron ProtonDiode model Diode characteristicLinear Sinusoidal

Dynamic & Diffusion capacitance. Static & Resistance capacitance.Transition Capacitance. Zener CapacitanceTransition Capacitance. Zener CapacitanceStatic Resistance Resistancep-n diode equation Voltage equation

0.32A 32mA

4.33ohm 40ohmOhm's law Newton's lawA.C signal BiasingA.C signal Biasing

1.8ohm 1.04 ohm

1.2 ohm 1 ohm

133.33 ohm 0.1133 ohm

37.5ohm 25ohmDC Resistance ResistanceDC Resistance Resistance5Ω .7Ω10M Ω 100M Ω26 ohm 26.09 ohm0.125M ohm 125M ohm

Positive and negative P-type and N-type3.5 to 4.5 eV 1 to 2.5 eV

Current VoltageDigital Micromirror Device Ammeter Device20 Million colours 16 Million colours

Liquid Crystal Display Vaccum DisplayGreen, Red and White Black, Orange and YellowTunnelling effect Light effectMicron Nano tubesCarbon Nano technology Field Emission Television Carbon Nanotube Field Emission Television

Photovoltaic Semiconductor effect49.1W 4.91WNeutrons ProtonsInverter CapacitorAluminium SiliconMechanical Energy Thermal EnergyOscillator PyranometerPyranometer Galvanometer65eV 32eVThermal speed Wind speed

Reverse Bias Saturation0.3 A/W 1.6 A/W8μA 90μA6.44A 64.4 AWhite current Noise CurrentNoise Shot noise2.48 eV 1.2 eV3.0 mA / W 2.0 mA / W

0.685 W cm-2 0.685 WLarge bandwidth Larger power handling capacity

Zener diode Photodiode

3 4Zener Diode Avalanche Photodiode0.66 A/W 6.66 A/W

410 ohm 200 ohm

0.591 A 5.91 A



Diode Equation Tunneling

Varactor Diode Photodiode

Zener diode Photodiode503.3 kHz 500 HzZener diode PhotodiodeNegative resitance Positive temperature of co-efficientMajority carriers Electrons

Capacitance-Voltage Capacitance

1.3 V/m 1.8 V/m

Hole-pair device electronic devicePhotodiode Hot carrier diode

Silicon Goldvaractor diode Tunnel diodePN junction diode varactor diodeSmall LargeSchottky barrier diode PN junction diode

Hole Concentration Barrier HeightDifference between fermi energy and valence bandDifference between fermi energy and electronWork Function Image chargeSmaller ZeroThermionic emission of holes from the semiconductElectron injection from the metal into the semiThe semiconductor work function The semiconductor electron affinityThe small signal model does not have a diffusion c The small signal model does not have a junctio1.3 V/m 1.8 V/mReverse current Alternating currentZener diode Photodiode

Minority carrier transport Hole Concentrationdiffusion current (minority carrier transport) Hole Concentration

Small LessSmall LessSmall LessSmall LessNormal ZeroNormal Zero

0 1

0 1

Minority carrier device Neutrons

Protons Donor impurityProtons Donor impurityValence band Energy fermi levelNear conduction band At the middle of the band

Vbi=kT/q ln Nd/ni^2 Vbi=kT/q ln Na/ni^2

Near conduction band At the middle of the band

Increases Zero 1.2F 0.01F

Increases Zero

Bride rectifier Half wave rectifier

CRd < T/10 & CRd > 10T CRd < T/10 & CRd > T/10

Preventing from op-amp to get damage To conduct more current

Reversing diode D2

Charging both the didoes

10kHz 1kHz

longer than period Shorter than period

Current exceeds set value Barrier potential is zeroReverse Bias Saturation0.3 A/W 1.6 A/W8μA 90μA

Option D Comment Correct anVendor naAuthor na Remarks Client rem

Holes and Protons C TextBoth A and B A TextBoth A and B B TextIncreases D TextIncreases D TextKnee point D Text35A C Equations4.7 V A EquationsAnode B TextBackward C Text

0.83 A A EquationsOff the Load line B Text

0.75 A A Equations Question hOff the Load line A Text Question h

84A C Equations0 B TextUpward D TextQuiescent Point and Device A Text

0A B Image and Equations

50 C Equations

40mA C Equations Can you sho

8.7V B Equations Corrected the solutio

16.2 sin ωt (μA) & 2.0995 sinωt (V) A Image and EquationsBoth A and B C Image Provided thBoth A and C B Text Corrected t0 ohm C Equations Can you sho

44.44 ohm A EquationsBoth A and B B TextBoth B and C A TextBoth B and C A Text Corrected t

1 C TextIdeal- Diode Model D ImageSaturation region. B Text3 C Text Corrected t

26.66 ohm A Equations

28mA D EquationsNeutron B TextNeutron A TextDynamic resistance D Imagelogarithmic A Text

Diffusion & Transition capacitance. D TextDiode Capacitance B TextDiode Capacitance A TextExponential Resistance B Text Can you shoCurrent equation A Text

28mA C Equations

43.3 ohm D EquationsFaraday's Law B TextNon-Biasing B TextNon-Biasing A Text

0 ohm C Equations

0.5 ohm A Equations

0.013 ohm B Equations

30 ohm D Equations Non repeataDiode Equation B ImageDynamic Resistance D Image Figure is p70Ω A Equations Can you sho1000M Ω B Equations Can you sho27 ohm C Equations Can you sho125 ohm B Equations Can you sho

Silicon and Germanium C Text1.5 to 3.5 eV D Text

Both B & C A Image Please checSterographic Device B Text10 Million colours C Text

Plasma Display D TextRed, Green and Blue D TextResistive effect B Text Can you shoMini tubes A Text Can you shoCarbon Nano Field Emission Television C Text Can you sho

Photoresistive B Text3.2W A Equations Can you shoElectrons D TextTransformer B TextCopper C TextHeat Energy A TextWattmeter C TextRectifier A Text62eV D EquationsElectron speed C Text Can you sho

Cut-off B Text Can you sho2.6 A/W C Equations Can you sho40μA B Equations0.00644A A Equations Can you shoDark Current D Text Can you shoWhite noise A Text Can you sho4 eV B Equations4.5 mA / W A Equations Can you sho

0.685 W A Equations Can you shoSensitivity C Text Can you sho

LED C Text

D Image Provided th

1 B TextSchottky diode C Text Can you sho66.66 A/W B Equations Provided th

B Image Provided th430 ohm A Equations Can you sho

5.91 mA D Image and Equations

C Image Can you shoLED A Text Can you sho

Tunnel Diode D Text Can you sho

Photodiode C Text

A Image Provided thTunnel Diode B Text Can you sho

C Image Provided thLED A Text50Hz B Equations Can you shoTunnel Diode A TextPower Circuits A Text Can you shoHole B Text Can you sho

Resistance B Text Can you sho

2.3 V/m

A Equations Please firsMajority carrier device D Text Can you shoTunnel Diode C Text Can you sho

C Image Provided thCopper C Text Can you shoSchottky barrier diode D ImageTunnel diode A Text Can you shoBoth A and B B Text Can you shovaractor diode B Text Can you sho

Minority carriers C Text Can you shoDifference between hole and fermi energy A Text Can you shoHole Concentration B Text Can you shoOne A Text Can you shoThermionic emission or electrons from the semicoB Image Can you shoThe Built-in potential of the MS diode D Text Can you shoThe diode turn on voltage is smaller B Text2.3 V/m A Equations Provided tDirect current B Text Question hTunnel Diode A Text Question h

Electron Concentration A Text Can you shoElectron Concentration B Text

Zero C Text Completed Zero A Text Can you shoZero B Text It's not thZero A Text It's not thHigh D TextHigh A Text

0.7 C Text Completed

0.7 A Text Completed

Protons

B TextAcceptor impurity C TextAcceptor impurity D TextConduction energy C ImageZero B Text

Vbi=kT/q 1/ni^2

A EquationsZero A Text

One B Text0.1F D Equations

One A Text

Clamping circuit C Text

CRd < 10T & CRd > 10T B Equations

For more power B Text

Reversing diode D1 & D2 D Image

0.1Hz C Equations

Same as period B Text

Barrier potential is reduced A TextCut-off B Text2.6 A/W C Equations40μA B Equations

Status Link Sample

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=(1.05)(0.0259) ln (1+70 ×10-6/10-18 )=0.87V

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1.3 x 105 V/m

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Recall Easy A TextUnderstandMedium B ImageApplicationDifficult C Equation

D Equation and Image

Include image oriented questions also

The solution should not be the same as of the question framed. The solution should be framed by asking the SME the question "WHY"?.Equations should be in the form of "Microsoft equation 3"Plagiarism in any form is not acceptableThe options "None of the above/All of the above" are not acceptableThe starting letter of each word should be in capital format except for prepositions and conjunctionsThe capital letter word in between is not acceptableThe input to the column "Remarks (AG)" should be appropriate as per the question framed

The solution should not be the same as of the question framed. The solution should be framed by asking the SME the question "WHY"?.

Electronic Devices_Basic Electronic Devices and Circuits (EE)_Junction Diode Characteristics

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