CPEC Hirakawa Group - iis.u-tokyo.ac.jp · GaAs (6.5 nm)/Al 0.3 Ga 0.7 As (2.5 nm) SL femtosecond...
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Institute of Industrial Science
Hirakawa Group[Quantum nanophysics and its device
applications]Center for Photonics Electronics Convergence
http://thz.iis.u-tokyo.ac.jp
Quantum Semiconductor Electronics
Quantum nanophysics and its device applications
CPEC
Ee-202- From atto to tera - Quantum nanophysics and its device applications
Department of Electronic Engineering and Information Systems
Various intriguing physics shows up in quantum nanostructures owing to size quantization and electron-electron interaction effects. We investigate such novel physics in quantum nanostructures and look into their device applications.
■ Carrier dynamics and device applications of quantum nanostructures in the THz range ■ Physics and applications of single quantum dot transistors■ Nanoscience and nanotechnologies toward novel single molecular devices■ Molecular beam epitaxy of semiconductor quantum structures and nanofabrication
technologies
-1 0 1 2 3 4Time (psec)
T = 10K
TH
z el
ect
ric f
ield
, E
TH
z (a
rb. u
nits
)
1
11
21
31
Fb = 39 kV/cm
GaAs (6.5 nm)/Al0.3
Ga0.7
As (2.5 nm) SL
femtosecond laser
Molecular beam epitaxy
Site-controlled InAs quantum dots
d = 40nm
d = 80nm
d = 120nm
d = 150nm
DrainSource
Gate
DrainSource
Gate
< 1 nm
5.9 uS3.1 uS
0.2 uS
1.6 uS
0.4 uS
N = 1
N = 0
C60 internal vibration
Δ
InAs量子ドット
SEM image Typical size QDs
h = ~ 20 nm
SEM image Typical size QDs
h = ~ 20 nm
Bloch oscillation in semiconductor superlattices and its application to THz oscillators
Fabrication of atomic-scale nanogap electrodes and single molecular transistors
Physics and applications of single quantum dot transistors Crystal growth of quantum nanostructures by molecular beam epitaxy