CHAPTER: HISTORY of ION IMPLANTATION in SEMICONDUCTORS

Several of my associates have written review papers on various aspects of the history of ion implantation, or their personal views or experiences associated with aspects of the history of ion implantation. In 1988, I went through my files and collected together all of the old historical material, and organized it by year. In what follows here, I review that material, often in historical time order. This material is certainly not complete, and is not intended to be complete. It is just one person's collection of material that circumstances brought together in one file. It does include some material that has not appeared in the papers and reviews of others referred to above. I apologize to any reader who does not find his or her work referred to here. Because of the treatment of the history of commercial implantation equipment by A.T. Coughlin, I have chosen not to treat that aspect of the technology, and to include here her work, which has not appeared in the technical literature nor at any of the conferences on Ion Implantation Equipment and Techniques. However, I do treat information regarding research implantation equipment and historical material related to the development of research/technology in sections of this work.

PAPERS that Review Various Historical Aspects of Ion Implantation

L. Wegmann, "Historical perspectives and future trends for ion implantation systems," Nucl. Instrum. Meth. 189, 1-6 (1980)

P.H. Rose, "A history of commercial implantation," Nucl. Instrum. Meth. B6, 1-8 (1985)J.F. Gibbons, "Historical perspectives on ion implantation," Nucl. Instrum. Meth. B21, 83-89

(1987); see also a section on history in his review paper - "Ion implantation in semiconductors - Part I Range distribution theory and experiments," Proc. IEEE

56, 295-319 (1968).

EARLY PATENTS related to doping semiconductors by ion bombardment or ion implantation:

The strict definition of ion implantation may be interpreted differently by various groups or individuals, depending upon their experience or discipline. As a result of reading some of the early patents, and based on my personal experience in ion implantation, I feel that four significant early patents and their relationship to the technology known today as ion implantation doping of semiconductors are shown in Fig. 1. They are also listed below in more detail, with brief notes about their contents. These four patents are by three originators, Shockley, Ohl, and Moyer. If we consider the subject of ion bombardment as a more general

classification, and ion implantation as a subclassification, then the 1949 Shockley patent is relevant, but in that case, the doping effect is caused by damage, not by substitutional impurities resulting from implantation. If we consider doping by atoms of opposite conductivity type rather than damage, then the three patents by Ohl, Moyer, and Shockley become significant. The one by Ohl (1950) is a surface effect, and the two in 1954 by Moyer and by Shockley are for atoms (as ions) "implanted" beneath the surface into the bulk of a semiconductor such that the conductivity type is changed in the implanted region by substitutional placement, which forms a stricter definition of 'ion implantation doping' as known today. 'Ion implantation' has been broadened to include other effects that do not involve doping or conductivity type, for example, materials synthesis, surface modification of metals and ceramics, biology, etc., and so, a broadened definition of 'ion implantation’ could go back in time even before 1949, to include ion bombardment of other surfaces.

W. Shockley, "Semiconductor translating device," US Patent 2,666,814, filed 27 Apr 1949 (issued ?). make p regions in a n layer of Ge using masked ion bombardment by nuclear particles, e.g., 1H, 2H, or 4He plus annealing at 100 to 400°C for minutes to days.

R.S. Ohl, "Semiconductor translating device," US Patent 2,750,541, filed 31 Jan 1950. (issued 12 June 1956) bombardment by ions of a significant impurity to change the conductivity of the surface of a semiconductor body.

J.W. Moyer, "Method of making p-n junction semiconductor unit," US Patent 2,842,466, filed 15 June 1954 (issued 8 July 1958). bombard semiconductor crystal of one type with ions of an activator element of opposite conductivity type, those ions penetrating below the surface where a p-n (or n-p) junction is formed. control of junction depth, doping, and uniformity of "ion implantation".

W. Shockley, "Forming semiconductive devices by ionic bombardment," US Patent 2,787,564, filed 28 Oct 1954 (four months after the Moyer patent was filed) (issued 2 Apr 1957). manufacture of semiconductor devices. implantation of a semiconductor with ions of dopants that cause substitutional doping of opposite conductivity type to the material implanted. B & Ge as example. refers to the related work of Ohl, but notes that Ohl's patent considers change caused on the surface by ion bombardment, while Shockley refers to change caused beneath the surface by "implantation" of the impurity ions (" " my words).Note also a later patent that speaks to implantation equipment.W.J. King, "Method of forming a p-n junction by an ionic beam," U.S. Patent 3,388,009, filed 23 June, 1965. uses term "ion implantation" and describes apparatus for implantation, including beam formation, acceleration, mass separation, and scanning.

Early LITERATURE Related to Implanters

Early work that provided a basis for implantation system concepts and components, and for ion implantation itself, in the 1960s, came from work in the areas of particle accelerators (high voltage/energy) and electromagnetic isotope separators (versatile ion beam/element capabilities). Some early work that provided helpful guidance was the doctoral dissertation of O. Almen, "Electromagnetic separation of isotopes in a small laboratory machine," Doktorsavhandlingak vid Chalmers Tekniska Hogskola, Goteborg, 1962, which includes four earlier (1957-1961) papers published in Nucl Instrum 1, 302-322 (1957); 2, 249-260 (1958); 11, 257-278 (1961); and 11, 279-289 (1961). These four works, which include as co-authors, K. O. Nielsen, G. Bruce, and A. Luden, also contributed helpful information regarding sputtering and ion sources. [This work even speaks to ion propulsion (sputtering aspects for lifetime limitations).] To quote Almen, "Isotope separators are essentially large mass spectrometers." Likewise, ion implanters are mass spectrometers. The industry has developed high current, commercial ion implanters, but when large volume production is not a requirement, a mass spectrometer with microampere currents of all elements serves as an adequate and useful implanter for research. The trade off is versatility and wide range of variables. The implanters at HRL also served as Rutherford backscattering analyzers, performed channeled implantation, performed implants from 5 keV to 1 MeV (lower fluences), provided implants at temperatures from liquid nitrogen to 500°C, implanted at many angles, implanted essentially all elements in the periodic table (with turn around time from 15 to 60 min), provided energy accuracy to within 1%, and implanted one isotope only for all elements over small area (~ 1 inch) and one isotope only over 4-inch areas up to about mass 100, and two isotopes over 4-inch areas from 100 to 200 m/z.

1957 July 10 K.O. Nielsen, "The development of magnetic ion sources for an electromagnetic isotope separator," Nucl. Instrum. 1, 289-301 (1957)

1961 Aug 30 R.W. Barnfield, B.W. Farmery, L.C.W. Hobbis, R.S. Nelson, and M. W. Thompson, "A 100-keV heavy ion accelerator for the study of irradiation damage," Plasma Physics 4, 89-93 (1962).

BOOKS About or Related to Ion Implantation

Ion implantation in semiconductors: silicon and germanium, J.W. Mayer, L. Eriksson, & J.A. Davies [Academic Press, 1970]

Ion implantation, G. Dearnaley, J.H. Freeman, R.S. Nelson, & J. Stephen [North Holland, 1973]

Ion beams; with application to semiconductors, R.G. Wilson & G.R.. Brewer [Wiley, 1973]

Channeling: theory, observation, and applications, Ed. D. V. Morgan [Wiley, 1973]Applied solid state science, Advances in material and device research, Vol. 5, K. A.

Pickar [Academic Press, 1975]Ion beam handbook for material analysis, J.W. Mayer & E. Rimini [Academic Press, 1977]Ion implantation, H. Ryssel & I. Ruge [Wiley, 1986]The stopping and ranges of ions in matter, 5 Volumes Ed. J.F. Ziegler [Pergamon]Handbook of semiconductors, Vol. 3, Ed. S.P. Keller [North Holland, 1980] e.g., J.F.

Gibbons, p. 599.

REVIEWS that Relate to Ion Implantation

1969 L.N. Large, "Ion implantation: a new method of doping semiconductors - I," Contemp. Phys. 10, 277-98 (1969). Interesting feature of this paper is the use of balls for

ions, and pin arrays for a lattice the generation of depth distributions by rolling balls through the lattice in different orientations.

1969 G. Dearnaley, K. Kandiah, & R.S. Nelson, "Ion implantation in semiconductors," Phys. Bull. 20, 165-68 (1969)

1976 J.H. Freeman, "The boundaries of ion implantation," Inst. Phys. Conf. Ser. 28, chapter 9, 340-56 (1976)

PAPERS, REPORTS, and PRESS RELEASES Related to Ion Implantation or Depth Distributions of Ions in Crystals or Materials - from 1960 to 1977

1960 Nov 3 J.A. Davies & G.A. Sims, "The range of 24Na ions of kiloelectron volt energies in aluminum," Can. J. Chem. 39, 601-10(1961) Ranges and profiles.

1961 Jan 10, F.M. Rourke, J.C. Sheffield, and F.A. White, "Crystal "doping" by ion bombardment," Rev. Sci. Instrum. 32, 455-56 (1961)

1962 Aug 2 O.S. Oen, D.K. Holmes, & M.T. Robinson, "Ranges of energetic atoms in solids," J. Appl. Phys. 34, 302-10 (1963) Monte Carlo calculations.

1962 Dec 5 M.T. Robinson & O.S. Oen, "The channeling of energetic atoms in crystal lattices," Appl. Phys. Lett. 2, 30-32 (1963)

1962-65 Ion Physics Corp. Reports on AF contracts AF33(657)-10505 and AF33(615)-2292

1963 Feb 22 J.A. Davies, F. Brown, & M. McCargo," Can. J. Phys. 41, 8291963 Mar 20 C. Lehmann & G. Leibfried, "Long-range channeling effects in irradiated

crystals," J. Appl. Phys. 34, 2821-36 (1963)1963 June 6 J.H. Ormrod & H.E .Duckworth, "Stopping cross section in carbon for low

energy atoms with Z < 12," Can. J. Phys. 41, 1424-42 (1963)1963 July 29 M.T. Robinson & O.S. Oen, "Computer studies of the slowing down of energetic

atoms in crystals," Phys. Rev. 132, 2385-98 (1963)1963 J.O. McCaldin, & A.E. Widmer, "Silicon heavily doped by energetic cesium ions," J.

Phys. Chem. Solids 24, 1073-80 (1963)1964 Mar 26 M. Waldner & P.E. McQuaid, "Characteristics of silicon p-n junctions formed by

sodium and cesium ion bombardment," Solid State Electronics 7, 925-31 (1964); & "In drift effect in silicon p-n junctions formed by sodium ion bombardment," Proc. IEEE 54, 1966-67 (1966)

1964 Apr 21 P.V. Pavlov, E.I. Zorin, D.I. Tetel'baum, & Yu.S. Popov, "The depth ofpenetration and the distribution of radiation defects in germanium bombarded by argonand nitrogen ions," Sov. Phys.-Solid State 6, 2577-80 (1965)

1964 May 11 B. Domeij, F. Brown, J.A. Davies, & M. McCargo, "Ranges of heavy ions in amorphous oxides," Can. J. Phys. 42, 1624-34 (1964)

1964 Ion Physics Corp., "p-n junction formation techniques," Final Report Contract AF33(615)-1097

  1965 In 1965, a series of papers appeared in Nuclear Instruments Methods 38, which

comprise the proceedings of the International Conference on "Electromagnetic Isotope Separators and Related Ion Accelerators and their Application to Physics," held in Aarhus, Denmark on 14-18 Jan 1965. Those papers include:

K.J. Hill & R.S. Nelson, "A sputtering ion source," p. 15-18, a versatile mA ion source for metals and gases.

G. Sidenius, "The high temperature hollow cathode ion source," p.19-22J.H. Freeman, "Isotope contamination and electromagnetic separator performance," p. 49-

55, discusses self and cross contamination in ion sources that relates to implantationJ.H. Freeman, "Some perspectives in electromagnetic isotope separation," p. 97-102,

discusses future requirements for applicationsJ.O. McCaldin, "Ion beams and solid state physics," p. 153-64, work for Li & Na in Si and

general discussion.J.F. Gibbons, J. L. Moll, & N. I. Meyer, "Doping of semiconductors by ion bombardment," p.

165-68, Tm & Nd in Si, GaAs, CdS, and ZnS.K.E. Manchester, C. B. Sibley, & G. Alton, "Doping of silicon by ion implantation," p. 169-74,

B & P in Si, activation efficiency, junction depth, damage - of diodesD.B. Medved, J. P. Perel, H. J. Daly, & G. P. Rolik, "Implantation and channeling effects of

alkali ion beams in semiconductors," p. 175-77, K and Cs beams, 1-20 keV (alkalis do not activate)

W.J. King, J. T. Burrill, S. Harrison, F. Martin, & C. Kellett, "Experience in fabricating semiconductor devices using ion implantation techniques," p. 178-79, 50-400 keV. B & P in Si to make solar cells, radiation detectors, unipolar FETs, and bipolar transistors. channeling discussed. double implants of B & P for bipolars, and single implants through SiO2 passivation layers for FETs

The work at Ion Physics Corp was also described in a press release in Electronics News, June 28, 1965, in which they discussed production work, yields, and future business aspects of implantation.

P. Baruch and J. C. Pfister, "Radiation induced diffusion in silicon," p. 197, proton or electron irradiation at high temperature

1965 Apr 3 P. V. Pavlov, E.I .Zorin, D.I.Telel'baum, E.K. Granitsyna, "The electrical conductivity of inversion layers formed in n-silicon by bombardment with boron ions," Sov. Phys. - Solid State 7, 2386-90 (1966)

1965 June 6 P.V. Pavlov, E.I. Zorin, D.I. Tetel'baum, & Yu. S. Popov, "Donor properties of nitrogen introduced into silicon and germanium by ion bombardment," Sov. Phys.-Doklady 10, 786-87 (1966)

1965 Nov 29 J.F. Gibbons, A. El-Hoshy, K.E. Manchester, & F.L. Vogel, "Implantation profiles for 40-keV phosphorus in silicon substrates," Appl. Phys. Lett. 8, 46-48 (1966)

1965 H.H. Andersen & P. Sigmund, "Defect structures in channeling experiments," Nucl. Instrum. Meth. 38, 1238 (1965)

1965 The potentials of implantation in 1965 were reviewed in an editorial in SCP and Solid State Technology, August, 1965, p.21, which included doping vesatility, room temperature processing, SiC and diamond device potential, doping through SiO2

layers, IC fabrication, writing circuits using tiny ion beams, metallic interconnects fabrication, and flexibility. The limitations of damage, sputtering, and possibly cost, were also mentioned.

1966 Feb 3 P.V. Pavlov, D.I. Tetel'baum, E.I. Zorin, & V.I. Alekseev, "Distribution of implanted atoms and radiation defects in the ion bombardment of silicon (Monte Carlo calculation method)," Sov Phys-Solid State 8, 2141-46 (1967)

1966 Mar K.E. Manchester & C.B. Sibley, "Characteristics of Si doped by low-energy ion implantation," Trans Metal Soc AIME 236, 379 (1966) B and P ions. uniform, large area, deep junctions.

1966 May C.M. Kellett, W.J. King, F.A. Leith, et al., "High energy ion implantation of materials," Sci. Rept. (No1) AFCRL-66-367 on Contract AF19(628)-4970. >50 keV B & P ions in Si, SiC, diamond, & S & Zn in GaAs. range-energy relationships and straggles; unipolar transistors; annealing effects; active devices in Si.

5 yrs prior II work at IPC. used annealing to remove implant damage, allowing chem. doping of solar cells; II GaAs for lasers; 50-400 keV. channeling & potential applications. discuss projected range, Se & Sn, & LSS theory; calculated ranges &

straggles; discuss sputtering; show implanted device char in Si & GaAs.1966 July G.R. Brewer, O.J. Marsh, & R.G. Wilson, "Ion implantation doping techniques,"

Rept. No. 1 on Contract AF33(615)-38211966 July L.N. Large & H. Hill, "Junction formation in germanium by Sb+ ion bombardment,"

SERL Tech. J. 16(1). 100 keV Sb doping profile; diode chars.; e- diffraction1966 Nov R.W.Bicknell, K. Perkins, G.V. Smith, W. Holt, "Ion implantation in

semiconductors," Annual Res. Rept. RP9-89 of Allen Clark Res. Ctr. Plessey Co. Ltd, B in Si. annealing; e- microscopy; focused beam implantation discussed in detail;

brief mention of channeling applications.1966 Nov 9 V.K. Vasil'ev, E.I. Zorin, P.V. Pavlov, & D.I. Tetel'baum, "Electrical properties of

inversion layers produced in silicon by bombardment with phosphorus and aluminum ions," Sov Phys -Solid State 9, 1503-07 (1968). P & Al in Si; electrical char.;Hall, s,

annealing, amorphization1966 F.W. Martin, S. Harrison, & W.J. King, IEEE Trans. Nucl. Sci. NS13, 22 (1966)

1967 Jan F.A. Leith, W.J. King, P. McNally, et al., Ion Physics Corp., "High energy ion implantation of materials," AFCRL-67-0123, Final Report on Contract AF19(628)-4970. More of 1966 work.

1967 Feb L.N. Large, H. Hill, & M.P. Ball, "Profiles of high conductivity shallow layers in silicon produced by boron ion implantation," SERL Tech. J. 17(1), 7.1 (1967) and Internat. J. Electronics 22, 153-66 (1967)

1967 Feb 16 L. Eriksson, J.A. Davies, J. Denhartog, J.W. Mayer, O.J. Marsh, & RMankarious, "Analysis of Sb-implanted silicon by (p,p) scattering and Hall Measurements," Appl. Phys. Lett. 10, 323-25 (1967)

1967 Mar W.J. Kleinfelder, "Properties of ion-implanted boron, nitrogen, and phosphorus in single-crystal silicon," Technical Report No K701-1 on DARPA Contract SD-87. B, P, N in Si 30 & 50 keV; experim. depth distrib. & comparison with theoretical distrib. & LSS. x-ray topogr. & electrical; planar and mesa diodes fabricated & planar transistors mentioned; fab. of Si3N4 using ion implantation. Describes and shows photo of the implantation system at Stanford Univ. Discusses range theory and Se and Sn. Shows early range-energy curves. Shows early experim. and calculated

depth profiles that appeared later in other material from Stanford. Appendix that gives range calc. techniques.   1967 May 9 In May, 1967, the IEEE 9th Annual Symposium on Electron, Ion, and Laser

Beam Technology was held in Berkeley, CA (IEEE Catalog No. F-79, Ed. R. F. W. Pease). Several papers were presented at that symposium that relate to early ion

implantation work, including the following:

W.J. Kleinfelder, W.S. Johnson, & J.F. Gibbons, "Experimental distribution of ions implanted into single-crystal silicon," p. 101-107. See Mar Kleinfelder above.

W. .Johnson, W.J. Kleinfelder, & J.F. Gibbons, "Projected range calculations from a statistical model," p. 108-117. This work appears to have become the Johnson and Gibbons Range Tables.

R.G. Wilson, "Ion implantation sources," p. 22-33.E.D. Wolf, "Low-energy electron beam interactions with ion-implanted semiconductor surfaces," p. 135-144. _______1967 May 18 O.J. Marsh, J.W. Mayer, G.A. Shifrin, & D.M. Jamba, "Solubility effects of

implanted ion in semiconductors," Appl. Phys. Lett. 11, 92-94 (1967)1967 June R.J. Sherwell, J.A. Raines, & L.N. Large, "Avalanche multiplication in photo-

sensitive junctions formed by ion implantation," SERL Tech. J. 17(2), 11.1 (1967) Also given at Grenoble Conference in June, 1967.

1967 June 1967 J.A. Kerr & L.N. Large, "Studies of ion implanted layers of boron and phosphorus in silicon and their applications to high frequency bipolar transistors," SERL Tech. J. 17(2) 12.1 (1967) Also given at Grenoble Conference in June, 1967.

1967 July 29 I.A. Galaktionova, V.M. Gusev, V.G. Naumenko, & V.V. Titov, "Conductivity and carrier density distributions in silicon doped by ion bombardment," Sov Phys - Semiconductors 2, 656-59 (1968). P in Si + 700°C anneal. Incremental Hall.

1967 Sept 1 J.A. Davies, J. Denhartog, L. Eriksson, & J.W. Mayer, "Ion implantation of silicon I. Atom location and lattice disorder by means of 1.0-MeV helium ion scattering," Can. J. Phys 45, 4053-71 (1967)

1967 Sept 1 J.W. Mayer, O.J. Marsh, G.A. Shifrin, & R. Baron, "Ion implantation of silicon II. Electrical evaluation using Hall-effect measurements," Can. J. Phys. 46, 4073-89 1968)

1967 Aug 3 L.N. Large & R.W. Bicknell, "Ion implantation doping of semiconductors," J. Materials Sci. 2, 589-609 (1967)

1967 Oct 5 V.M. Gusev & V.V. Titov, "Kinetics of thermal annealing of radiation defects in silicon doped by the ion implantation method," Sov. Phys.-Semicond. 3, 1- (1969)

1967 Nov 2 W.J. Kleinfelder, W.S. Johnson, & J.F. Gibbons, "Impurity distribution profiles in ion-implanted silicon," Can. J. Phys. 46, 596-606 (1968)

1967 Nov 3 G.D. Alton & L.O. Love, "Radiation damage and substitutional chemical impurity effects in single-crystal germanium bombarded with 40-keV B, Al, Ga, Ge, P, As, and Sb ions," Can. J. Phys. 46, 695 (1968)

1967 Nov R.W. Bicknell, G.V. Smith, & N.C. Moore, "Ion implantation in semiconductors," Annual Report RP9-89 Allen Clark Research Center, Plessey Co. TEMs of defects.

1967 Nov 21 J.A. Kerr & E. Wadham, "Study of ion implantation in semiconductors," C.V.D. Research Project RP6-36 Rept. No. 15,192C Assoc. Semiconductor Manufacturers Ltd., Wembley Laboratories,Hirst Res. Ctr., UK. Bipolar transistor fabrication.

1967 Nov 22 J.W. Mayer, L. Eriksson, S.T. Picraux, & J.A. Davies, "Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering," Can. J. Phys. 46, 663 (1968)

1967 Nov 1967 Physics Today, p. 115, Review of Grenoble Conference 1968 Feb 2 J.F. Gibbons," Ion implantation in semiconductors - Part I Range distribution

theory and experiments," Proc. IEEE 56, 295-319 (1968). Reviews distribution profiles and damage centers, and annealing of same. Theoretical and experimental

work reviewed.1968 May 13 J.A. Davies, L. Eriksson, N.G.E. Johansson, & I. V. Mitchell, "Channeling of MeV

He+ ions in tungsten and other crystals: An intercomparison of Rutherford scattering and of characteristic L and M x-ray yields," Phys. Rev. 181, 548-51 (1969)

1968 May W.J. King, J.T. Burrill, S.J. Solomon, et al., "Ion implantation junction techniques," Contract Report AFAPL-TR-66-41, 103 p. solar cell production, ion energy program-

ming, P ions, 400-kV machine1968 July 15 Electronics News 13, "Ion implant power diodes ready for sale by Isofilm

(Internat.)" Variety of improved rectifiers.1968 Aug 22 L. Eriksson, J A. Davies, N.G.E. Johansson, & J.W. Mayer, "Implantation and

annealing behavior of group III and V dopants in silicon as studies by the channeling technique," J. Appl. Phys. 40, 842-54 (1969)

1968 Sept 23 K. Bjorkqvist, B. Domeij, L. Eriksson, G. Fladda, A. Fontell, & J. W. Mayer, "Lattice location of dopants implanted into germanium," Appl. Phys. Lett. 13, 379-81 (1968)

1968 Sept 26 L. Eriksson, G.R. Bellavance, & J.A. Davies, "Substitutional doping during low-dose implantation of Bi and Tl ions in Si at 25°C," Radiat .Effects 1, 71-73 (1969)

1968 Oct 14 Electronics Newsletter, p. 33. Hughes Aircraft Co. soon ready to commit ion implantation techniques to production of both MOS and avalanche (IMPATT) diodes.

1968 Dec 20 L. Eriksson, G. Fladda, & K. Bjorkqvist, "Influence of n-type dopants on the lattice location of implanted p-type dopants in Si and Ge," Appl. Phys. Lett. 14, 195-97 (1969)

1968 Jan 13 D.E. Davies, "Post annealing conductance behavior of implanted layers in silicon," Appl. Phys. Lett. 14, 227-29 (1969)

1969 Jan 14 J.D. Macdougal, K.E. Manchester, & P.E. Roughan, "High value implanted resistors for microcircuits," Proc. IEEE 57, 1538-42 (1969). B in Si. 50 keV + 950°C anneal.

1969 Feb 12 L. Eriksson and J.A. Davies, "Deuteron and helium ion channeling in uranium dioxide," Arkiv. f. Fysik 39, 439-50 (1969)

1969 Feb 24 B.L. Crowder & E.E. Morehead, Jr, "Annealing characteristics of n-type dopants in ion-implanted silicon, "Appl. Phys. Lett. 14, 313-15 (1980) P, As, Sb. 300 keV + 600°C anneal

1969 Feb 24 R. Baron, G.A. Shifrin, O.J. Marsh, & J.W. Mayer, "Electrical behavior of group III and V implanted dopants in silicon," J. Appl. Phys. 40, 3702-19 (1969) annealing. 50 keV. RT & hot implants. Hall & s.

1969 Mar J. M. Fairfield & B.L. Crowder, "Ion implantation doping of silicon for shallow junctions," Trans. Metal Soc. AIME 245, 469-71 (1969). B, P, As in Si + annealing. 70-500 keV.

1969 July 14 Electronics News, "Kev now moving to market with ion implant products," Kev Electronics Corp.

1969 Aug 11 R. Bader & S. Kalbitzer, "Carrier concentration profiles of ion-implanted silicon," Appl. Phys. Lett. 16, 13-15 (1970). Electrical measurements for B, Al, & P.

1969 Sept 8 Electronic News, "Toshiba has ion-implant technique," same as Nov 1969 below.

1969 Sept 15 Press release. "Planting bears fruit," Toshiba again. 30-keV B.1969 Oct Electro-technology, p. 15 "British unveil ion implant work," AERE Harwell, UK.

Isotope separator plus a target at high voltage; implantation for <1000 slices per day. 0-180 keV plus heating and cooling. Controlled direction, masking, low lateral spreading. Five advantages and one range figure.

1969 Oct Electro-technology, p. 20 "ion implanted devices gain ground," Isofilm Internat - ectifiers. Hughes Aircraft - MOS devices. Reduced lateral spread. 20 MHz shift registers. 10-channel multiplexer at 10 MHz.

1969 Nov Electro-technology, p. 14 "Ion implanted transistor operates at X band," Toshiba in Japan (Shibura Electric Co). Microwave transistors. Cutoff frequency 9 GHz and power gain of 8 dB. B and P ions at ~200 keV.

1969 Nov 29 Business Week, "They may have built a better mousetrap," Accelerators Inc + Ion Physics. Many company names as users.

1969 G. Dearnaley, "Ion bombardment and implantation," Rep. Prog. Phys. 32, 405-91 (1969) Appears to be the basis for the book by Dearnaley et al. in 1976

1969 G. Dearnaley, "The range and energy loss of implanted ions," Proc. Roy. Soc. A311, 21-33 (1969)

1969 G. Fladda, P. Mazzoldi, E. Rimini, D. Sigurd, & L. Eriksson, "Evidence of a replacement reaction between ion implanted substitutional Tl dopants and interstitial Si atoms," Radiat. Effects 1, 249-56 (1969)

1970 Feb Electro-technology, "Ion implantation dopes photodiodes," EG&G implanted photodiodes

1970 Mar Industrial Research, p. V1 "Semiconductor doping with ion implantation soon will become possible at production rates. Present systems can dope 1000 slices a day," Ion Physics Corp, Oak Ridge National Lab, Chalk River (Canada), Harwell

(England), and Thompson CSF mentioned.1970 Apr 20 D.E. Davies & S.A. Roosild, "Minority carrier lifetimes in ion-implanted and

annealed silicon," Appl. Phys. Lett. 17, 107-09 (1970). 1970 May Electronics, p. 125 "Ion implantation goes to market," Hughes and Mostek

produce MOS/LSI. Accelerators Inc, TI, Signetics, Fairchild, Motorola, Bell Labs, Western Electric, Stanford Research Institute, Sandia Corp., Institute for Technical Electronics, Munich, Universita Degli Studi diBologna, Italy. Devices listed.

1970 May Microwaves p. 34 "Ion implantation technology reaches mass production status," Toshiba & Hitachi. MOSFETs.

1970 June Mostek data sheet #2300670 Implanted ROMs.

1970 June J. McDougall & K. Manchester, "Ion implantation manufacturing proccesses for monolithic silicon circuits," Tech. Report AFML-IR-F33615-70-C-1233(II)

1970 June Machine Design, p. 20 "Hitachi implanted MOS Materials Engineering 1970 Aug Industrial Research, in Vacuum Cryogenics p. V1. Hughes Aircraft Co on

devices and systems.1970 Aug Mostek Data Sheet #1002870 Static shift register using "ion implant"1970 Machine Design, month? p. 36, Hitachi implanted MOS1970 Sept Industrial Research p. 64 "Ion implantation is here," Ion Physics/High Voltage

Engineering, Isofilm International, Hughes Aircraft Co., Mostek, Hitachi, Lintott Engineering, KEV Electronics, Fairchild, TI, Motorola, Bell Laboratories,

Western Electric, Sprague, IBM, Signetics, and devices are mentioned.1970 Sept 21 Electronics News, p. 853, "KEV Corp implanter.1970 Oct Science p. 425 "Ion implantation - MIT, Stanford, Bell Telephone Laboratories,

Hughes Aircraft, & Ion Physics Corp. In Britain, the Universities of Sussex, Surrey, and Salford; the government laboratories at Harwell and at the Services Electronics and Research Laboratory (SERL), Baldock, --- two firms in Japan, Hitachi and Toshiba, --- . The other major centers include Chalk River Laboratory, Canada, The Centre

d'Etude Nuclaire, Grenoble, France, and Aarhus University, Denmark. There are also active groups at Caltech, Sandia Corp, IBM, and North American Rockwell." Reference made to the ion implantation conferences in Thousand Oaks, CA, and Reading, UK. Mullard Research Laboratory (UK), Lintott (UK), Argonne

Nat Lab mentioned. Comprehensive technical article.1970 P.J. McNally, "Ion implantation in InAs and InSb," Radiat. Effects 6, 149-53 (1970) S &

Zn in InAs & InSb. Energy 0.2-1.8 MeV. p-n Js. exp ranges > LSS calcs. large Sn

component.1970 R.G. Hunsperger & O.J. Marsh, "Electrical properties of Cd, Zn, and S ion-implanted

layers in GaAs," Radiat. Effects 6, 263-68 (1970)1970 J.D. Sansbury & J.F. Gibbons, "Properties of ion implanted silicon, sulfur, and carbon in

gallium arsenide," Radiat. Effects 6, 269-76 (1979) GaAs(Cr)1970 G. Carter, W.A. Grant, J.D. Haskell, & G.A. Stephens, "Radiation damage by implanted

ions in GaAs and GasP," Radiat. Effects 6, 277-84 (1970) 40-keV Te. 500°C implant temperature required.

1970 J. Gyulai, O. Meyer, R.D. Pashley, & J. W. Mayer, "Lattice location and dopant behavior of group II and VI elements implanted in silicon," Radiat Effects 6, ?? (1970)

1970 W. Stumpfi & S. Kalbitzer, "Low energy boron and phosphorus implants in silicon (A) Electrical sheet measurements," Radiat. Effects 6, 205-10 (1970). Annealing studies.

1970 J.S. Harris & F.H. Eisen, "The annealing of damage in ion-implanted gallium arsenide," Radiat. Effects 7, 123-28 (1971)

1971 Jan 21 Machine Design, "Ion beam target chamber," p. 41. Lintott implantation target chamber.

1971 Feb 18 Electronic Design, "Enter, the ion-implantation age, where 'impossibilities' are possible," p. 25-28. Hughes Aircraft, Signetics, Mostek, Sprague, KEV Electronics, Bell Telephone Laboratories, TI.

1971 Mar 23 B.L. Crowder, "Applications of ion implantation for new device concepts," J. Vac. Sci. Technol. 8, S71-75 (1971) depth distribution of damage and implanted P ions in Si. annealing activation curves for P in Si.

1971 Apr Electromechanical Design, "Ion implantation: a fast growing doping technology," p. 2-5 of Digital Designs. FETs, IMPATTs, RAMs, ROMs, TTL. KEV Electronics, Isofilm Internat, Hughes Aircraft.

  1971 May 12 In May of 1971 the 11th Symposium on Electron, Ion, and Laser Beam

Technology was held in Boulder ,CO (IEEE Catalog No. 71 C 23-ED, Ed. R.F.M. Thornley). Several papers were presented at that symposium that were related to ion

implantation, including the following: K. Gamo, M. Iwaki, K. Masuda, & S. Namba, "Concentration profiles and enhanced diffusion

in ion implanted silicon studied by radioactivation analysis," pp. 103-10.R.L. Seliger, "E x B mass separator design," pp. 183-192.R.G. Wilson and G.A. Shifrin, "Ion implantation system for device production," pp. 351-358.

The system described is the machine that A. Coughlan describes as the first attempt to make a commercial ion implanter (Accelerators Inc.).

T .Takagi, I. Yamada, & J. Ishikawa, "Beam-plasma type ion source," pp. 597-604.T. Takagi, I. Yamada, & J. Ishikawa, "Electron-bombardment type simplified ion source," pp. 623-630.________________ 1971 June 12 Electronic News "in Ion Implantation, there is only one manufacturer with

proven performance: Accelerators, Inc." 40 implanters in the field.1971 June 12 Electronic News, "Extrion sells ion implantation system" first Extrion sale - to

National Semiconductor.1971 July 19 Electronics, "Production-line ion implantation is fully automatic," p. 103. 120

3" wafers/h. Ortec of EG&G.1971 Oct Industrial Research, "Ion implant system has preprogrammed operation," p. 59.

Ortec.1972 Jan 3 Electronics News, "Fairchild buys ion implant unit" Extrion machine.1972 Feb The Electronic Engineer, "Ions for sale: approximately 10-11 cents apiece,"

Accelerators Inc. - implantation service. 25-125$ per wafer in 19721972 Feb 21 Electronics News, "Ion-implant production accelerating at Mostek,"

Accelerators Inc machine.

1972 Feb 24 J. Stephen, "Ion implantation in semiconductor device technology," Radio Electron Engr. 42, 265-83 (1972)

1972 June 12 1972 J.F. Gibbons, "Ion implantation in semiconductors - Part II: Damage production and annealing," Proc IEEE 60, 1062-96 (1972) A review.

1972 Dec H.G. Dill, R.M. Finnila, A.M. Leupp, & T.N. Toombs, "The impact of ion implantation on silicon device and circuit technology," Solid State Technology, p. 27-35.

1973 Mar 26 Electronics News, p. 75, "Boron system seen key to lower ion-implant costs," Accelerators Inc - for MOS production.

1973 Mar 19 Electronics News, "Milliamp ion implanter in UK," Lintott Engineering/AERE. 30 2-inch wafers/h for 5x1015 cm-2 -1% nonuniformity. mA beams of B, P, As, Sb at 90 keV. $75,000 for beam system + $35,000 for end station.

1973 May 21 Electronics Products Magazine, p. 80 "Ion implantation yields low cost audio amplifier," Sprague Electric Co. resistor.1973 June 7 Electronics Design, p. 128 "2 k-bit SR has 10-MHz rate," Hughes

Microelectronics Products uses ion implant.1973 June Solid State Technology, p. 59 KSW Electronics. 20 keV to 2 MeV RT, cold,

hot implants. [KSW reversed is WSK, which could be the initials of Willian S King.]1973 International Conference on Applications of Ion Beams to Metals, Eds. S.T.

Picraux, E.P. EerNisse, & F.L. Vook [Plenum,1974] Five papers related to implantation of superconducting films. Several dozen papers on implanted metals, including G.

Dearnaley, "The use of ion beams in corrosion science," p. 63; J.W .Mayer, "Ion beam studies of metal-metal and metal-semiconductor reactions," p. 141; and H. deWaard & L.C. Feldman, "Lattice location of impurities implanted in metals," p. 317.

1973 Sept 10 Electronic Engineering Times, p. 26, "High performance precision timer developed," National Semiconductor LM122 precision timer; and "Ion implantation ups rectifier switching speed," Solid State Devices.

1974 May 16 G.I. Robertson "Rotating scan for ion implantation," J. Electrochem. Soc. ???, 796-800 (1975)

1974 Nov Solid State Technology, A. Axmann "Ionizable materials to produce ions for ion implantation," Survey.

1975 Mar Electronics Packaging and Products, p. 67 "Ion implantation: higher beam currents for higher throughput," Extrion Corp. Useful curves of target temperature vs beam energies and current densities (and emissivity).

1975 May 5 & 19 Implantation system to NASA Marshall. Accelerators Inc.1975 May 19 Electronics News, "Varian to buy Extrion for $3.5M"1975 Oct Industrial Research, p. 21 "Western Electric reports: ion implantation with a new

twist," Mechanical scanning.

1975 Dec Solid State Technology A.B. Wittkower, P.H. Rose, & G. Ryding, "Advances in ion implantation production equipment," Varian/Extrion.

1975 W.K. Hofker "Implantation of boron in silicon," Doctoral dissertation, published as Philips Research Report Supplement No. 8 (1975). A comprehensive (and classic) work on implantation of B in Si.

1975 G. Ryding & A.B. Wittkower, "Industrial ion implantation machines," IEEE Trans. Manuf. Technol. MFT-4, 21-29 (1975)

1978 May 1 to 30 June 1981 S.G. Liu, E.C. Douglas, C.P. Wu, C.W. Magee, & S.Y. Narayan, RCA LAboratories, "High-energy ion implantation for multigigabit-rate GaAs integrated circuits," Final Report on Contract N00014-78-C-0367. Si in GaAs. Depth profiles. Electrical measurements, and activation efficiencies for Si in GaAs. 70 keV-1 MeV. Capping conditions. Cr redistribution effects. Some S and Se implantation, and Ar

damage-assisted work (dual implants). C-V and SIMS profiles.1979 Feb 6 A.F. Khokhlov, "Ion implantation in amorphous silicon," Sov. Phys.-Tech. Phys.

49, 1373-74 (1979)1981 June 24 A.V. Dvurchenskii & I.A. Ryazantsev, "Ion implantation doping of evaporated

amorphous silicon films," Sov. Phys.-Semicond. 16, 888-91 (1982)1987 Apr 10 E. Antoncik, "Chemical trends in lattice location of implanted impurities in A IIIBV

compounds," Nucl. Instrum. Meth. Phys. Res. B29, 490-99 (1987)1987 June 24 P.M. Read, C.J. Sofield, N.E.B.Cowern, & L.B. Birdwell, "Stopping powers for

energetic ions in carbon targets," Nucl. Instrum. Meth. Phys. Res. B29, 583-86 (1987)1987 P.M. Echenique, "Interaction of slow ions with bulk and surfaces," Nucl. Instrum. Meth.

B27, 256-65 (1987)

CHAPTER: EARLY ION IMPLANTATION CONFERENCES (1965-1988)

There were, or still are, several completed or ongoing series of conferences that relate directly or indirectly to ion implantation. There have also been a few individual or specialized related conferences. Some of these conferences are listed below -- the series, under their conference title. In those cases, the chronological position in the series is given. Whenever possible, the geographical location and date (month and year) are given. Where possible, information is given about the publication of the proceedings.

International Conference on the Application of Ion Beams to Semiconductor Technology

Grenoble, France May 1967 [OPHRYS]

European Conference on Ion Implantation

First: Reading UK [I.E.E.] Second: Warwick UK (1973 or 1975)

International Conference on Ion Implantation (in Semiconductors)

First: Thousand Oaks CA USA May 1970 [NorthHolland] Second: Garmisch-Partenkirchen, Bavaria, Germany May 1971 [Springer] Third: Yorktown Heights NY USA 1972 [Plenum] Fourth: Osaka, Japan 1974 [Plenum] Fifth: Boulder CO USA 1976 [Plenum]

The above conference series on Ion Implantation in Semiconductors was merged with the conference series on Ion Implantation in Metals to form the conference series, Ion Beam Modification of Materials (IBMM), beginning in 1978.

Ion Beam Modification of Materials (IBMM)

First: Budapest, Hungary Sept 1978 Radiation Effects 47/49 & a 3-vol proceedings Second: Albany NY USA July 1980 Nucl Instrum Meth 182 Third: Grenoble, France Sept 1982 Nucl Instrum Meth 209 Fourth: Ithaca NY USA July 1984 Nucl Instrum Meth B7 Fifth: Catania, Sicily, Italy June 1986 Nucl Instrum Meth B19 Sixth: Tokyo, Japan June 1988

International Conference on Ion Implantation Equipment and Techniques (Technology) becoming Ion Implantation Technology

First: Salford UK (Low Energy Ion Beams) Sept 1977 Inst Phys Conf Ser 38 Second: Trento, Italy Aug 1978 Radiation Effects 44 Third: Kingston, Ontario, Canada July 1980 Nucl Instrum Meth 189 Fourth: Berchtesgaden, Bavaria, Germany 1982 Fifth: Jeffersonville, Vermont, USA July 1984 Nucl Instrum Meth B6 Sixth: Berkeley CV USA Aug 1986 Nucl Instrum Meth B21 Seventh: Kyoto, Japan June 1988

Implantation Conferences in Eastern Europe

Lubin, Poland 1974 Budapest, Hungary 1975

Atomic Collisions in Solids [Earlier: Atomic Collisions and Penetration Studies with Energetic (keV) Ion Beams]

First: Aarhus, Denmark June 1965 Nucl Instrum Meth 38 Second: "The Chalk River Conference" Chalk River, Canada Sept 1967 Can. J.

Phys. Third: Brighton, Sussex, UK Sept 1969 [North Holland] Fourth: Gausdal, Norway Sept 1971 Radiation Effects 7-13 Fifth: 1973 Sixth: Amsterdam, Netherlands 1975 Nucl Instrum Meth 132 Seventh: Moscow, USSR 1977 [Moscow University Publishing House] Eighth: Hamilton, Ontario, Canada Aug 1979 Nucl Instrum Meth 170 Ninth: Lyon, France July 1981 Nucl Instrum Meth 194

Tenth: Badburg, Germany July 1983 Nucl Instrum Meth B2 11th: Washington DC USA Aug 1985 Nucl Instrum Meth B13 Commemorative Symposium on Atomic Collisions in Solids Chalk River/Deep River,

Ontario, Canada July 1986 Proceedings 12th: Okayama, Japan Oct 1987 13th: 1989

Ion Beam Analysis

First: Yorktown Heights NY USA 1973 Second: Karlsruhe, Germany 1975 Third: Washington DC USA July 1977 Nucl Instrum Meth 149 Fourth: Aarhus, Denmark June 1979 Nucl Instrum Meth 168 Fifth: Sydney, Australia Feb 1981 Nucl Instrum Meth 191 Sixth: Tempe AZ USA May 1983 Nucl Instrum Meth 218 Seventh: Berlin, Germany July 1985 Nucl Instrum Meth B15 Eighth: Johannesburg, South Africa Apr 1988

International Conference on Radiation Effects in Insulators

First: Arco, Lago di Garda, Italy July 1981 Second: Albuquerque NM USA June 1983 Nucl Instrum Meth B1

Irradiation Effects Associated with Ion Implantation Toronto, Ontario, Canada Oct 1985 Nucl Instrum Meth B16

Workshop on Stopping Power for Low Energy Ions First: Linz, Austria Sept 1984 Nucl Instrum Meth B12 Second: Linz, Austria Sept 1986 Nucl Instrum Meth B27

International Conference on Electromagnetic Isotope Separators and Techniques Related to their Applications*

First: Harwell, UK 1955 Second: Amsterdam, Netherlands 1957 Third: Vienna, Austria 1960 Fourth: Orsay, France 1962 Fifth: Aarhus, Denmark 1965 Nucl Instrum Meth 38 Sixth: Asilomar CA USA 1967 Seventh: Marburg, Germany 1970 Eighth: Skovde, 1973 Ninth: Kiryat Anavim, Israel 1976 Tenth: Zinal, Switzerland Sept 1980 11th: Los Alamos NM USA Aug 1986 Nucl Instrum Meth B26 12th: Japan 1990/91 ?

European Materials Research Symposium on Deep Implants: Fundamentals and Applications

Strasbourg, France June 1988

Shanghai Workshop on Characterization of Ion Implantation in Silicon Hangzhou, China June 1988

NATO Advanced Study Institute of Structure: Property Relationships in Ion-Beam Surface-Modified Ceramics

Il Ciocco, Italy Aug 1988

Sixth International Conference on Surface Modification of Metals by Ion Beams Riva del Garda, Italy Sept 1988

*Gibbons has attributed the first mention of ion implantation as a tool for device fabrication to the fifth of this series at Aarhus in 1965. Prior conferences in this series relate to implantation because of the aspects of generating ion beams of many elements and directing them onto solid targets. Isotope separators with semiconductor or related targets form one basis for low voltage ion implanters. Particle accelerators under the same conditions form one basis for high voltage implanters.