CES SERIES Power Modules - AMS Technologies · 2011. 4. 20. · I2T Maximum I2T for Fusing...

• Flexible circuit design These D iode modu les provide complete powercontrol in a single package, up to 100 Ampsvarious circuit design with connections forpanel mounting or Fast on. Ceramic base with 2500 Vrms isolation.UL recognition pending.

POWER CONTROL SOLUTIONS

CES SERIES

ELECTRICAL SPECIFICATION 50 100

SYMBOL SPECIFICATION RATINGS

ID Maximum DC Output Current (Tc = 85°C)

VF Maximum Voltage Drop @ Amps Peak 1.35V @ IF=60A 1.2V @ IF=100A

TJ Operating Junction Temperature Range -40°C to +125°C

di/dt Critical Rate of Rise of On-State Current @ TJ=125°C 100A/µs 100A/µs

dv/dt Critical Rate of Rise of Off-State Voltage [V/µs] 500V/µs

600 (240 Vac)

VRRM Repetitive Peak Reverse Voltage (AC Line) 1000 (380 Vac)1200 (480 Vac)

ITSM Maximum Non-Repetitive Surge Current(1/2Cycle, 60Hz) 800A 1500A

I2T Maximum I2T for Fusing (t=8.3ms) [A2 sec] 2650

RqJC Maximum Thermal Resistance Junction to Ceramic Base per Chip 0.45°C/W 0.30°C/W

VISOL Isolation Voltage 2500 VRMS 2500 VRMS

MECHANICAL SPECIFICATIONS

Weight: (typical) 4.7 oz. (163g)

PART NUMBER IDENTIFICATION

500V/µs

9350

60 Amps 100 Amps

EX.: CESB50/12

Power Modules

C3 Semiconductors, LLC. All rights are reserved

WEB SITE: http://www.C3semi.com

For recommended applications and more information contact: USA : Sales Support

Email : [email protected]

(888) 882-8689


• Low profile

• Terminals in fast on or Screw format

Circuit Type Current Voltage

CES - Case style 06 - 60008 - 80010 - 100012 - 1200

50 - 60 Amps100 - 100 Amps

Circuit Type

( See schematics diagram )

14 - 140016 - 1600

1400 (530 Vac)1600 (600 Vac)

MECHANICAL DIMENSIONS AND CIRCUIT DIAGRAM



For recommended applications and more information contact: USA : Sales SupportC3 Semiconductors, LLC. 501 West Broadway Street Suite 800, San Diego, CA 92101Email : [email protected]

(888) 882-8689


AC

AC

AC

+

--

AC

AC

+

--

AC

+

--

AC

+

ACAC

AC

AC +

B

H

D

E G

Flexible mounting, for Printed Circuit Board or Panel These m o d u l e s provide complete powercontrol in a single package, up to 42.5 Ampsvarious circuit design with connections forprinted circuit board or panel mounting. Ceramic base with 2500 Vrms isolation.UL recognition pending.


T SERIES



I D Maximum DC Output Current (Tc = 85°C)

V F Maximum Voltage Drop @ Amps Peak 1.80V @ IF=25A 1.60V @ IF=42.5A


di/dt Critical Rate of Rise of On-State Current @ TJ=125°C 100A/μs 100A/μs

dv/dt Critical Rate of Rise of Off-State Voltage [V/μs] 200V/μs

400 (120 Vac)600 (240 Vac)

V RRM Repetitive Peak Reverse Voltage (AC Line) 1000 (380 Vac)1200 (480 Vac)


I2T Maximum I 2T for Fusing (t=8.3ms) [A 2 sec] 375

RqJC Maximum Thermal Resistance Junction to Ceramic Base per Chip 0.9°K/W 0.7°K/W

V ISOL Isolation Voltage 2500 V RMS 2500 V RMS




200V/μs

1500

25 Amps 42.5 Amps

EX.: CT674

Power Modules





(888) 882-8689


Low profile

Terminals in fast on or pin format

Current Circuit type Voltage

T - Case style 1 - 1202 - 2403 - 2804 - 480

5 - 25 Amps6 - 42.5 Amps

Circuit Type


Any type of BridgeFree Wheeling Diode “F”


SERIES T CIRCUITS



For recommended applications and more information contact: USA : Sales SupportC3 Semiconductors, LLC. 2320 Paseo de las Americas, Ste. 104, San Diego, CA 92154Email : [email protected]

(888) 882-8689


+

--

AC1

AC2

G1 G2

+

--

AC1

AC2

G1 G2

+

--

AC1

AC2

G3 G4

G2G1

1 2 4

Package Dimensions mm SIDE 5 and 6 Models

1

G1

7

2

3

High Thermal EfficiencyComplete Power ControlCircuits in a SinglePackage

These modu les provide complete powercontrol in a single package, utilizinghigh thermal efficiency to assure longlife and reliable performance. Sixstandard models provide 2500 Vrmsisolation from all terminals to ceramicbase and are UL recognition pending.


CSDH SERIES



Weight: (typical)

PART NUMBERIDENTIFICATION

Series Type Half Controlled Current Circuit Type Voltage

CSD-Case style (see schematicdiagram)

Three Phase BridgeHalf ControlledRectifier Bridge

16 - 1600

12 - 120014 - 1400

100 - 110 Amps160 - 170 Amps

EX.: CSDH160/16

Power Modules



For recommended applications and more information contact:USA : Sales SupportC3 Semiconductors, LLC. 2320 Paseo de las Americas, Ste. 104, San Diego, CA 92154Email : [email protected]

(888) 882-8689For recommended applications and more information contact:USA : Sales Support

H

sgnitaR mumixaMsnoitidnoC tseTlobmyS

IdAV TC = 85 1011eludom ;C 70 AIFRMS, ITRMS A9885gel rep

IFSM, ITSM TVJ = 45 C; t = 10 ms (50 Hz), sine 1150 1500 AVR = 0 t = 8.3 ms (60 Hz), sine 1230 1600 A

TVJ = TVJM t = 10 ms (50 Hz), sine 1000 1350 AVR = 0 t = 8.3 ms (60 Hz), sine 1070 1450 A

I2t TVJ = 45 C t = 10 ms (50 Hz), sine 6600 11200 A2sVR = 0 t = 8.3 ms (60 Hz), sine 6280 10750 A2s

TVJ = TVJM t = 10 ms (50 Hz), sine 5000 9100 A2sVR = 0 t = 8.3 ms (60 Hz), sine 4750 8830 A2s

(di/dt)cr TVJ = TVJM repetitive, IT = 50 A 150 A/ sf =400 Hz, tP =200 sVD = 2/3 VDRMIG = 0.3 A, non repetitive, 500 A/ sdiG/dt = 0.3 A/ s, IT = 1/3 • IdAV

(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM 1000 V/ sRGK = ; method 1 (linear voltage rise)

VRGM 10 V

PGM TVJ = TVJM tp = 30 s 10 WIT = ITAVM tp = 500 s 5 W

tp = 10 ms 1 WPGAVM 0.5 WTVJ -40...+125 CTVJM 125 CTstg -40...+125 C

VISOL ~V0052nim 1 = tSMR ,zH 06/05IISOL ~V0003s 1 = tAm 1

Md 5)6M( euqrot gnitnuoM 15 % NmTerminal connection torque (M6) 5 15 % Nm

Weight typ. 265 g

High Thermal EfficiencyComplete Power ControlCircuits in a SinglePackage

These modu les provide complete powercontrol in a single package, utilizinghigh thermal efficiency to assure longlife and reliable performance. Sixstandard models provide 2500 Vrmsisolation from all terminals to ceramicbase and are UL recognition pending.


CSDH SERIES


Power Modules





seulaV citsiretcarahCsnoitidnoC tseTlobmyS

IR, ID VR = VRRM; VD = VDRM TVJ = TVJM 5 mATVJ = 25 C 0.3 mA

VF, VT IF, IT = 200 A, TVJ = 25 C 1.75 1.57 V

VT0 For power-loss calculations only 0.85 0.85 VrT (TVJ = 125 m5.36)C

VGT VD = 6 V; TVJ = 25 C 1.5 VTVJ = -40 C 1.6 V

IGT VD = 6 V; TVJ = 25 C 100 mATVJ = -40 C 200 mA

VGD TVJ = TVJM; VD = 2/3 VDRM 0.2 VIGD TVJ = TVJM; VD = 2/3 VDRM 5 mA

IL IG = 0.3 A; tG = 30 s TVJ = 25 C 450 mAdiG/dt = 0.3 A/ s

IH TVJ = 25 C; VD = 6 V; RGK = 200 mA

tgd TVJ = 25 C; VD = 1/2 VDRM 2 sIG = 0.3 A; diG/dt = 0.3 A/ s

RthJC per thyristor (diode); DC current 0.65 0.46 K/WW/K770.0801.0eludom rep

RthJH per thyristor (diode); DC current 0.8 0.55 K/WW/K290.0331.0eludom rep

dS mm01ecafrus no ecnatsid gnipeerCdA mm4.9ria ni ecnatsid egapeerCa s/m05noitarelecca elbawolla .xaM 2


SERIES CSDHCIRCUIT

Package Dimensions for 100 and 160 Amp Models





A

B

EDC

2 3 1

M6x10

73

30

27 6.5

6.5C ~ D ~ E ~

A + B -

54

15

122566

26 26728094

45

6

3

1

2

10-3 10-2 10-1 100 101100

200

300

400

500

600

700

800

900A

s

IFSM

t

50 Hz80% VRRM

TVJ = 45°C

TVJ = 125°C

Fig. 3 Surge overload current IFSM: Crest value, t: duration

VVZ 110

10-3 10-2 10-1 100 1010.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

st

K/W

ZthJC

Fig. 4 Transient thermal impedancejunction to case (per leg)

VVZ 110

0 50 100 1500

20

40

60

80

100

120

A

IdAV

°CTC

Fig. 2 DC output current at casetemperature

VVZ 110

Fig. 1 Gate trigger characteristics

1 10 100 10000.1

1

10

IG

VG

mA

1: IGT, TVJ = 125°C2: IGT, TVJ = 25°C3: IGT, TVJ = -40°C

V

4: PGAV = 0.5 W5: PGM = 5 W6: PGM = 10 WIGD, TVJ = 125°C

4

2

15

63

• High Thermal Efficiency

• Complete Power Control Circuits in a Single Package

These m o d u l e s provide complete powercontrol in a single package, utilizinghigh thermal efficiency to assure longlife and reliable performance. Sixstandard models provide 2500 Vrmsisolation from all terminals to ceramicbase and are UL recognition pending.


CSD SERIES

ELECTRICAL SPECIFICATION 160 210 250



V F Maximum Voltage Drop @ Amps Peak 1.65V @ IF=300A 1.43V @ IF=300A 1.43V @ IF=300A


di/dt Critical Rate of Rise of On-State Current @ TJ=125°C 100A/µs 100A/µs 100A/µs


400 (120 Vac)600 (240 Vac)

V RRM Repetitive Peak Reverse Voltage (AC Line) 1000 (380 Vac)1200 (480 Vac)1400 (530 Vac)

ITSM Maximum Non-Repetitive Surge Current(1/2Cycle, 60Hz) 1800A 2200A 2750A

I2T Maximum I 2T for Fusing (t=8.3ms) [A 2 sec] 16200 45000

RqJC Maximum Thermal Resistance Junction to Ceramic Base per Chip 0.65°K/W 0.45°K/W 0.45°K/W

V ISOL Isolation Voltage 2500 V RMS 2500 V RMS 2500 V RMS




1000V/µs 1000V/µs

36000

Series Type Current VoltageCSD-Case style 06 - 600

- 0 Amps02 - 210

0 Amps25 -250

08 - 800180 10 - 1000

1600 (600 Vac)

16 - 1600

160 Amps

180 Amps 250 Amps200 Amps

12 - 120014 - 1400

62 - 60 Amps82 - 80 Amps

EX.: CSD250/16

Power Modules





(888) 882-8689






CSD SERIES



Weight: (typical)


Series Type Current Circuit Type VoltageCSD-Case style (see schematic 06 - 600

- 0 Amps02 - 210

0 Amps25 -250

diagram) 08 - 800180 10 - 1000Three Phase Bridge

16 - 1600

160 Amps12 - 120014 - 1400

62 - 60 Amps82 - 80 Amps

EX.: CSD250/16

Power Modules



For recommended applications and more information contact: USA : Sales Support Email : [email protected]

(888) 882-8689




V F Maximum Voltage Drop @ Amps Peak 1.8V @ IF=150 1.6V @ IF=150A




400 (120 Vac)600 (240 Vac)


ITSM Maximum Non-Repetitive Surge Current(1/2Cycle, 60Hz) 550 A 740 A




1000V/µs

2800

1600 (600 Vac)

60 Amps 80 Amps

5.64 oz. (160g)


AC

AC

AC

+

--

SERIES CSD CIRCUIT

Package Dimensions for 180-250 Amp Models





(888) 882-8689




These m o d u l e s provide complete powercontrol in a single package, utilizinghigh thermal efficiency to assure longlife and reliable performance. Threestandard models provide 2500 Vrmsisolation from all terminals to ceramicbase and are UL recognition pending.



Series Type Circuit Type Current Voltage

CS-Case style 06 - 600-

08 - 80035

10 - 1000

16 - 1600

35 Amps

12 - 120014 - 1400

B - Single phaseD - Three phase


25 - 35 Amp • DIODE Module

ELECTRICAL SPECIFICATIONS





(888) 882-8689


Ex.: CSD35/16

- 25 25 Amps



V F Maximum Voltage Drop @ Amps Peak 1.05V @ IF=17.5A


di/dt Critical Rate of Rise of On-State Current @ TJ=125°C 100A/µs

dv/dt Critical Rate of Rise of Off-State Voltage [V/µs]

800 (280 Vac)V RRM Repetitive Peak Reverse Voltage (AC Line) 1000 (380 Vac)

1200 (480 Vac)1400 (530 Vac)

ITSM Maximum Non-Repetitive Surge Current(1/2Cycle, 60Hz) 500A

I2T Maximum I 2T for Fusing (t=8.3ms) [A 2 sec]

RqJC Maximum Thermal Resistance Junction to Ceramic Base per Chip 1.2°C/W

V ISOL Isolation Voltage 2500 V RMS

1000V/µs

1000

1600 (600 Vac)

35 Amps

600 (240 Vac)

25 Amps

1.1V @ IF=12.5A

350A

374

1.3°C/W



These m o d u l e s provide complete powercontrol in a single package, utilizinghigh thermal efficiency to assure longlife and reliable performance. Threestandard models provide 2500 Vrmsisolation from all terminals to ceramicbase and are UL recognition pending.

Series Type Circuit Type Current Voltage

CS-Case style 06 - 600-

08 - 80035

10 - 1000

16 - 1600

35 Amps

12 - 120014 - 1400

B - Single phaseD - Three phase


25 - 35 Amp • DIODE Module





(888) 882-8689


Ex.: CSD35/16

- 25 25 Amps

MECHANICAL DIMENSIONSSERIES CS CIRCUITS

16 8

6.25 6.25

10

φ

Dimmensions in mm.

AC

AC

+

--

AC

AC

AC

+

B

D

--

F

7 F

F

7

G

7 F

80

F

F8

H

8

H

I I

High Thermal Ef�ciencyComplete Power ControlCircuits in a SinglePackage

These m o d u l e s provide complete powercontrol in a single package, utilizinghigh thermal ef�ciency to assure longlife and reliable performance. Sixstandard models provide 2500 Vrmsisolation from all terminals to ceramicbase and are UL recognition pending.


CMDS SERIES

ELECTRICAL SPECIFICATION 160 210 250



V F Maximum Voltage Drop @ Amps Peak 1.65V @ IF=300A 1.43V @ IF=300A 1.43V @ IF=300A


di/dt Critical Rate of Rise of On-State Current @ TJ=125°C 100A/µs 100A/µs 100A/µs

dv/dt Critical Rate of Rise of O�-State Voltage [V/µs] 1000V/µs

400 (120 Vac)600 (240 Vac)


ITSM Maximum Non-Repetitive Surge Current(1/2Cycle, 60Hz) 1800A 2200A 2750A

I2T Maximum I 2T for Fusing (t=8.3ms) [A 2 sec] 16200 45000

RqJC Maximum Thermal Resistance Junction toCeramic Base per Chip 0.65°K/W 0.45°K/W 0.45°K/W

V ISOL Isolation Voltage 2500 V RMS 2500 V RMS 2500 V RMS




1000V/µs 1000V/µs

36000

Series Type Current Circuit Type VoltageCMDS-Case style (see schematic 06 - 600

-0 Amps02- 2100 Amps25-250


1600 (600 Vac)

16 - 1600

160 Amps

180 Amps 250 Amps200 Amps

12 - 120014 - 1400

62 - 60 Amps82 - 80 Amps

EX.: CMDS250/16

Power Modules





High Thermal Ef�ciencyComplete Power ControlCircuits in a SinglePackage

These m o d u l e s provide complete powercontrol in a single package, utilizinghigh thermal ef�ciency to assure longlife and reliable performance. Sixstandard models provide 2500 Vrmsisolation from all terminals to ceramicbase and are UL recognition pending.


CMDS SERIES



Weight: (typical)


Series Type Current Circuit Type VoltageCSD-Case style (see schematic 06 - 600

-0 Amps02- 2100 Amps25-250


16 - 1600

160 Amps12 - 120014 - 1400

62 - 60 Amps82 - 80 Amps

EX.: CMDS250/16

Power Modules



For recommended applications and more information contact:USA : Sales SupportC3 Semiconductors, LLC. 501 West Broadway Street, Suite 800, San Diego CA 92101Email : [email protected]




V F Maximum Voltage Drop @ Amps Peak 1.8V @ IF=150 1.6V @ IF=150A



dv/dt Critical Rate of Rise of O�-State Voltage [V/µs] 1000V/µs

400 (120 Vac)600 (240 Vac)


ITSM Maximum Non-Repetitive Surge Current(1/2Cycle, 60Hz) 550 A 740 A


RqJC Maximum Thermal Resistance Junction toCeramic Base per Chip 1.45°K/W 1.1°K/W


1000V/µs

2800

1600 (600 Vac)

60 Amps 80 Amps

5.64 oz. (160g)


AC

AC

AC

+

--

SERIES CMDS CIRCUIT 3 PHASE

Package Dimensions for 150-250 Amp Models




For recommended applications and more information contact:USA : Sales SupportC3 Semiconductors, LLC. 501 West Broadway Street Suite 800, San Diego CA 92101Email : [email protected]


Package Dimensions TOP 25-50 Amp Models

Package Dimensions SIDE 25 and 50 Amp Models



These m o d u l e s provide complete powercontrol in a single package, utilizinghigh thermal efficiency to assure longlife and reliable performance. Onestandard model, provides 2500 Vrmsisolation from all terminals to ceramicbase and are UL recognition pending.

ELECTRICAL SPECIFICATIONS 160



V F Maximum Voltage Drop @ Amps Peak 1.43V @ IF=300A


di/dt Critical Rate of Rise of On-State Current @ TJ=125°C 100A/µs

dv/dt Critical Rate of Rise of Off-State Voltage [V/µs]

400 (120 Vac)600 (240 Vac)


ITSM Maximum Non-Repetitive Surge Current(1/2Cycle, 60Hz) 1500 A

I2T Maximum I 2T for Fusing (t=8.3ms) [A 2 sec]

RqJC Maximum Thermal Resistance Junction to Ceramic Base per Chip 0.73°K/W

V ISOL Isolation Voltage 2500 V RMS

MECHANICAL SPECIFICATIONSWeight: (typical) 6.21 oz. (176g)

1000V/µs

9300

1600 (600 Vac)

160 Amps


Current Series Type Circuit Type Voltage

MT - Case style (see schematic 60 - 600-diagram) 80 - 800

160

100 - 1000Three Phase Bridge

160 - 1600

160 Amps

120 - 1200140 - 1400


EX.: 160MT120C3

C3 SemiconductorsC3




(888) 882-8689


160 AMP THREE PHASE BRIDGE

160MT Series

AC

AC

AC

+

--

MECHANICAL DIMENSIONS

SERIES 160MT CIRCUIT

2



These m o d u l e s provide complete powercontrol in a single package, utilizinghigh thermal efficiency to assure longlife and reliable performance. Onestandard model, provides 2500 Vrmsisolation from all terminals to ceramicbase and are UL recognition pending.


Current Series Type Circuit Type Voltage

MT - Case style (see schematic 60 - 600-diagram) 80 - 800

160

100 - 1000Three Phase Bridge

160 - 1600

160 Amps

120 - 1200140 - 1400


EX.: 160MT120C3

C3 SemiconductorsC3




(888) 882-8689


--

160MT Series160 AMP THREE PHASE BRIDGE





CMD SERIES




V F Maximum Voltage Drop @ Amps Peak 1.65V @ IF=25A 1.60V @ IF=40A




400 (120 Vac)600 (240 Vac)

V RRM Repetitive Peak Reverse Voltage (AC Line) 1000 (380 Vac)1200 (480 Vac)








500V/µs

1500

Series Type Current VoltageCMD-Case style 06 - 600

08 - 80010 - 1000

25 Amps 40 Amps

12 - 1200

25 - 25 Amps40 - 40 Amps

EX.: CMD25/12

Power Modules





(888) 882-8689



SERIES CMD CIRCUIT

Package Dimensions TOP 25-40 Amp Models

Package Dimensions SIDE 25 and 40 Amp Models




(888) 882-8689


• Flexible mounting, for Printed Circuit Board or Panel These modu les provide complete powercontrol in a single package, up to 42.5 Ampsvarious circuit design with connections forprinted circuit board or panel mounting. Ceramic base with 2500 Vrms isolation.UL recognition pending.


CLD SERIES



ID Maximum DC Output Current (Tc = 85°C)

VF Maximum Voltage Drop @ Amps Peak 1.65V @ IF=25A 1.60V @ IF=42.5A




400 (120 Vac)600 (240 Vac)

VRRM Repetitive Peak Reverse Voltage (AC Line) 1000 (380 Vac)1200 (480 Vac)


I2T Maximum I2T for Fusing (t=8.3ms) [A2 sec] 375


VISOL Isolation Voltage 2500 VRMS 2500 VRMS




500V/µs

1500

25 Amps 42.5 Amps

EX.: CLDA25/12F

Power Modules





(888) 882-8689


• Low profile

• Terminals in fast on or pin format

Circuit Type Current Voltage

CLD - Case style 06 - 60008 - 80010 - 100012 - 1200

25 - 25 Amps40 - 42.5 Amps

Circuit Type


Any type of BridgeFree Wheeling Diode “F”


SERIES CLD CIRCUITS




(888) 882-8689


+

--

AC1

AC2

G1 G2

+

--

AC1

AC2

G1 G2

+

--

AC1

AC2

G3 G4

G2G1

A B C

Package Dimensions mm SIDE 25 and 40 Models

Package Dimensions mm TOP 25 and 40 Models

CES SERIES Power Modules - AMS Technologies · 2011. 4. 20. · I2T Maximum I2T for Fusing...

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Transcript of CES SERIES Power Modules - AMS Technologies · 2011. 4. 20. · I2T Maximum I2T for Fusing...