Centro Astronómico de Yebes Observatorio Astronómico Nacional HIFI CAY 15/04/03SRON (Groningen)1...

15/04/03 SRON (Groningen) 1

Centro Astronómico de YebesObservatorio Astronómico Nacional HIFI

CAY

First Stage Cryogenic IF First Stage Cryogenic IF AmplifierAmplifier

Carmen Diez



CAY

OUTLINEOUTLINE• DM Program (Yebes)

– Amplifiers (4-8 GHz)– Isolators– Isolator-Cable-Amplifier

• QM & FM Programs (Transfer to Industry)– First Prototype (4-8 GHz)

• Qualification Program– Qualification Boards– EMC, ESD, Radiation, Bake-out

• Programmatic/financial concerns • Planning• Open Issues & Summary



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HIFI YCF 6004HIFI YCF 6004

m=65 g 58 x 32 x 15 mm



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HIFI YCF 6000 (Noise and Gain)HIFI YCF 6000 (Noise and Gain)

3 4 5 6 7 8 90

2

4

6

8

10

12

Tn

[K]

Freq. [GHz]

0

5

10

15

20

25

30

HERSCHEL IF1 YCF 6 DMsP

D=4 mW, T=14 K

Gai

n [d

B]



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HIFI YCF 6000 (I/O Reflection)HIFI YCF 6000 (I/O Reflection)

2 3 4 5 6 7 8 9 10-30

-25

-20

-15

-10

-5

0

Freq. [GHz]

S11,

S22

[dB

]

HERSCHEL IF1 YCF 6 DMsP

D=4 mW, T=14 K



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HIFI YCF 6000 (Gain Stability)HIFI YCF 6000 (Gain Stability)

10-2 10-1 100 10110-5

10-4

10-3

10-2

YCF 6001 Gain fluctuations Spectrum8 GHz, 14 K Vd1=0.85 V Vd2=0.5 V Id1,2=3 mA

G/G

[H

z-1

/2]

Freq. [Hz]

measured fitted correction

0.2 0.3 0.4 0.5 0.6 0.7 0.80.00

2.50x10-5

5.00x10-5

7.50x10-5

1.00x10-4

1.25x10-4

1.50x10-4

Gain fluctuations noise floor

YCF 6001 1st stage fluctuations8 GHz, 14 K Id=3 mA

VD1

(device) [V]

G/G

@1

Hz

[1/H

z1/

2]

0.0

1.0x10-5

2.0x10-5

3.0x10-5

4.0x10-5

5.0x10-5

6.0x10-5

VG @

10 H

z [V

/Hz

1/2]



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HIFI YCF 6000 (Results)HIFI YCF 6000 (Results)



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Isolators: MeasurementsIsolators: Measurements



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Isolators: Isolators: PPerformanceerformance

0 2 4 6 8 10 12-50

-40

-30

-20

-10

0

-5

-4

-3

-2

-1

0

Isol

atio

n [d

B]

Freq. [GHz]

PAMTECH CTH 1365 K10 ISOLATORS (T=15 K)

S12 S21

Lo

sse

s [d

B]

0 2 4 6 8 10 12-50

-40

-30

-20

-10

0PAMTECH CTH 1365 K10 ISOLATORS (T=15 K)

S22 S11

Ref

lect

ion

coef

f. [d

B]

Freq. [GHz]

MEASUREMENTS @ 14 K [dB] ISOLATOR MODEL

DATA TYPE S11 < S22 < S12 < S21 >

Gav mean [dB]

ΔTc mean [K]

Best of 9 -19.6 -19.0 -19.6 -0.27 -0.17 0.81

Average -18.8 -18.1 -17.4 -0.36 -0.20 1.12 CTH1365 K4

Worst of 9 -18.2 -17.3 -16.0 -0.46 -0.30 1.48

Best of 5 -18.0 -17.9 -20.7 -0.50 -0.26 1.25

Average -16.2 -15.4 -18.3 -0.58 -0.28 1.38 CTH1365 K10

Worst of 5 -15.0 -14.0 -16.5 -0.66 -0.30 1.47



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• Isolators measured @ 14 K (PAMTECH gives data @ 77 K)

• Good agreement between measurement and estimation of isolator noise

• Mean contribution 1.1 – 1.4 K

3 4 5 6 7 8 90

5

10

15

20

25

30

YCF 6005 (T=14 K)

Tn

(K)

Freq (GHz)

No Isolator Isolator K10 SN 101

0

5

10

15

20

25

30

G(d

B)

IsolatorsIsolators

ampambiso

c TTG

T

1

1



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QM & FM PROGRAMS (First Prototype)QM & FM PROGRAMS (First Prototype)



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QUALIFICATION PROGRAM (Boards)QUALIFICATION PROGRAM (Boards)

Resistors, Capacitors and

Transistors glued

Resistors and Capacitors soldered

Capacitors glued



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QUALIFICATION PROGRAM QUALIFICATION PROGRAM

• EMC: Bias circuit already set

• ESD: “ESD Tests on InP HEMT Transistors”

Yebes/FPSS/TN/2002-014

• Radiation: Tests carried out successfully

• Bake-out: Vacuum pre-qualification bake-out held (3 days at 83ºC). No influence found in the IF1 unit calibration



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PROGRAMMATIC/FINANCIAL CONCERNSPROGRAMMATIC/FINANCIAL CONCERNS

• 1 Contract signed: 2 QMs (Qual) (4-8 GHz)

2 QMs (Accep) (4-8 GHz)

7 FMs (4-8 GHz) • 2 Contracts to be signed: 2 DMs (2.4-4.8 GHz)

4 FMs (2.4-4.8 GHz)

3 FMs (4-8 GHz)

Funding for year 2003 has been approved but Funding for year 2003 has been approved but only about 1/3 of it has been deliveredonly about 1/3 of it has been delivered !!! !!!

5 FSs (4-8 GHz)

2 FSs (2.4-4.8 GHz)



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CRYO IF1 (4-8 GHz) AMPLIFIER-HIFI PLANNINGCRYO IF1 (4-8 GHz) AMPLIFIER-HIFI PLANNING

Id Activity1 DM Program for FPU

12 Transfer to Industry15 QM Program16 Industrial Preliminary Study17 Selection of the source of InP devices 18 Qualification Program19 Procurements20 TRW Devices21 Passive Components22 Isolators23 Measurement of devices/Design Update24 CDR25 QMs Manufacturing (4 units)26 Qualification Tests (2 units)27 End Item Data Package (2 QMs)28 Acceptance Tests (2 units)29 End Item Data Package (2 QMs)30 Delivery (2 QMs)31 FM Program32 Procurements33 TRW Devices34 Passive Components35 Isolators36 Measurement of devices37 Design Update38 Production, Measurement & Acceptance of 10 FMs39 Delivery last FM40 FS Program41 Design Updates42 Production & Measurement of 10 FSs43 Delivery last FS

31 March

1 August

30 April

2 June

23 October

15 May

1 June

31 July

1 March

31 December

2000 2001 2002 2003 2004 2005



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OPEN ISSUES & SUMMARYOPEN ISSUES & SUMMARY

• Qualification Boards to be repaired and qualified

• IF1 CDR to be held

• Structures, Substrates and Components (with the exception of the 18nF capacitors) prepared for the fabrication of the QM units

• QM Isolators to be delivered by PamTech

• Isolator position to be defined

• Environmental tests to be defined completely

• IF1 low (2.4-4.8 GHz) prototype to be fabricated and the design transferred to the industry

• A new contract with industry to be signed



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PA/QA (Qualification)

• Performance tests at 15K

• 25 cryogenic cycling between RT and 15K

• 5 warm cycling between RT and 80ºC

• 144 hrs. extended bake-out at 80ºC

• Vibration (sine/random) at 77K





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PA/QA (Acceptance)



• Vibration (sine/random) at RT




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Industry: ALCATEL

• Clean room for assembly

• Cryostat (property of OAN) for measurements

• Specialized in production for space (strict QA)

• Experience with HERSCHEL amplifiers

3 4 5 6 7 8 90

5

10

15

20

25

30

NFM Measurements (14 K)V

D1 = 0.85 v , V

D2 = 0.5 v , I

D = 3 mA

YCF AEO01 YCF 6006

Gai

n (d

B)

Freq. (GHz)

2

3

4

5

6

7

8

Tn

(K)

YCF AEO01 YCF 6006



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Industry: TTI

• Bonding machine

• Experience in cryostats

• Complete receiver with S/X cryogenic amplifiers delivered to Finland

• 8.4 K @ 8.4 GHz with Fujitsu devices

(20 h k)

7 8 9 100

5

10

15

20

10

20

30

40YTX 001

Tn

(K)

F (GHz)

Noise

Gai

n (d

B)

Gain



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Microwave Capacitors at Cryogenic Temperature



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3 4 5 6 7 8 90

5

10

15

20

25

30

YCF 2 InP devices comparisonOptimum noise bias

ETH T-35 TRW T-45 TRW T-42

Ga

in (

dB

)

Freq. (GHz)

0.0

2.5

5.0

7.5

10.0

12.5

15.0

Tn

(K

)

ETH T-35 TRW T-45 TRW T-42

TRW T-42 CRYO3 200×0.1 μm gate Best performance

TRW T-45 CRYO4 200×0.1 μm gate Used in DMs Space qualifiable, to be used in FMs CHOP developed

ETH T-35 200×0.2 μm gate Experimental transistor Design by request Used in MPAs

0.22 mm

0.19

mm Transistors

Centro Astronómico de Yebes Observatorio Astronómico Nacional HIFI CAY 15/04/03SRON (Groningen)1...

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