Cd2SnO4

ABSTRACT

(CdO, Cd2SnO4)

(300 °C)(400,500)°C

((Cd(CH3COO)2.2H2O))((SnCl2.2H2O))

(XRD)

(Polycrystalline)(Cubic)(CdO)(201.6 Å)

(Cd2SnO4)(268.3 Å)(CdO)(G.s)

(δ)(d)(a)(Cd2SnO4)

(300-900)nm

(CdO)(60%)(900 nm)

(2.31 eV)

(Cd2SnO4)(72%)(900 nm)(3.1 eV)

(Cd2SnO4,CdO)

The Properties Of Thin Films

(Cadmium Oxide (CdO))

(n-Type)

(TCO s̓)

(Face Center Cubic (F.C.C.))

(CdO)

Cadmium Stannate (Cd2SnO4

(Cd2SnO42.06-3)eV

Cd2SnO4

n-type

Orthorhombic Structure.

Aim of Research

(CdO)

Cd(CH3COO)2.2H2O)

(5%)

(Cd2SnO4)(95%)

(5%)

Experimental Part

(Solution Preparation)

(1)(CdO)

Cd(CH3COO)2.2H2O)(266.52)gm/mol

0.1 mol/L2.6652 g100ml)

Magnetic Stirrer(15-20)min

M = (Wt / MWt). (100/V)

(2)(Cd2SnO4)

Cd(CH3COO)2.2H2O)

(SnCl2.2H2O)(225.63)gm/mol(5%)

(95%)(Cd:5%Sn)

(300)°C

COOHCHOHCdO 322 2 OHOHCdCOOCH 222 2.)3(

HCLSnoCd 842OHOHSnClOHCdCOOCH 22222 2.2.)3(2

(CdO.Cd2SnO4) -

1-Substrate Temperature-

(300°C)

2-Vertical Distance-

(29.5 0.5cm)

3-Average Spryer-

(8 ml/min)

4-Average Time Spryer-

15secmin3

5-Air Pressure-

(105 N/m2)

measurements

SHIMADZU- 6000Type

Cu- KαTarget

1.54060 Wave Length

40 kVVoltage

30 mACurrent

20o-60oRange of (2θ)

5 deg/ minSpeed

(2)

(X-Ray Diffraction Analysis)o

A

(3)

(The Optical Measurements)

AbsorbanceTransmittance

300–900nm)

UV/VIS–SPECROPHOTOMETER/1800BIOTECH

Results and Discussions

Structural Properties

(XRD)

(Cd2SnO4,CdO)

(Polycrystalline)

(Cubic)

(CdO)

(220),(200),(111)(111)

(c),(b)

(5%)

(300°C)

(CdO)(a)

(XRD)(2θ )

(400°C)

(131),(130),(001)

(b)(500 C)

(121)(c)

(Cd2SnO4)

1-

(Interatomic Spacing (d)

(d)

2dsinθ = nλ

(d)(CdO)

(d)

(Cd2SnO4)

dÅ(Theory.)dÅ

(Measured)2θ(hkl)

Temperatu

re

T(°C)

Type of

thin film

2.717362.71735732.9353(111)300CdO

2.352462.352464538.2274(200)

1.662761.6627655.1961(220)

2.709562.70955933.0328(111)400

2.346472.34647438.3288(200)

1.659311.659312455.3206(220)

2.709722.70971933.0308(111)500

2.347492.34748838.3115(200)

1.661491.661487155.242(220)

2.726752.72672632.8186(111)300Cd:5%Sn

2.361182.36143538.0808(200)

1.669181.66912254.9659(220)

3.302393.30175726.9776(001)400

Cd

2S

nO

4

2.867022.86702131.171(130)

2.088742.24460643.2817(131)

3.307283.30728626.937(001)500

2.868412.86845331.1555(130)

2.400792.40078837.429(121)

2.093492.09348543.1786(131)

2-(Lattice Constant (a))

(a)(ASTM)

1/d2 = (h2+k2+l2)/a2

(CdO)(4.7066Å)(Cd2SnO4)

(9.0663Å)

aÅ (Measured)(hkl)Temperature

T(°C)

Type of thin

film

4.706601(111)300CdO

4.693094(111)400

4.693371(111)500

4.722827(111)300Cd:5%Sn

9.066316(130)400Cd2SnO4

9.070844(130)500

3-(Grain Size (G.s))

(G.s)

(CdO)

(Cd2SnO4)

G.s Åβ(FWHM)

(deg.)2θ(hkl)

Temperature

T(°C)

Type of thin

film

201.6460.456732.9353(111)300CdO

225.00120.464633.0328(111)400

228.80030.402633.0308(111)500

149.50380.615832.8186(111)300Cd:5%Sn

268.32260.341731.171(130)400Cd2SnO4

224.10760.409131.1555(130)500

cosk G.s

Some Structural Parameters Calculation

Tc(hkl)Temperature

T(°C)

Type of thin

film

2.0979(111)300CdO

0.6084(200)

0.29371(220)

1.6854(111)400

1.0787(200)

0.23596(220)

1.3889(111)500

0.9583(200)

0.652778(220)

1.37615(111)300Cd:5%Sn

1.12844(200)

0.49541(220)

0.9913(001)400

Cd

2S

nO

4

1.3044(130)

0.704(131)

0.8657(001)500

1.19403(130)

1.10448(121)

0.83582(131)

2-(Dislocation Density ( ))

δ = 1/ (G.s) 2

(CdO)

( )

(Cd2SnO4)

×10-5

Line/Å2

Temperature

T(°C)

Type of thin

film

2.4564300CdO

1.9751400

1.91024500

4.474300Cd:5%Sn

1.38895400Cd2SnO4

1.99107500

3-(Number of Crystals (M)

M=t/ (G.s) 3

(CdO)

(Cd2SnO4)

4-Number of Layers (NL)

NL=t/G.s

(CdO)(Cd2SnO4)

NLM/Å2Temperature

T(°C)

Type of

thin film

9.91840.00024300CdO

8.8890.0001756400

8.741250.00017500

13.377590.000599300Cd:5%Sn

7.4537130.000104400Cd2SnO4

8.9242840.000178500

5-Integral Breadth (∆))

(XRD)

∆=Area/Imax

(∆)(β)

(Δ)

β

Shape

Factor (Φ)

Integral

Breadth

(∆)(deg.)

β(FWHM)

(deg.)

Temperature

T(°C)

Type of thin

film

0.91340.50.4567300CdO

0.84470.550.4646400

1.17980.4750.4026500

0.87970.70.6158300Cd:5%Sn

0.91120.3750.3417400Cd2SnO4

0.90910.450.4091500

6-Shape Factor (Φ))

Φ= β/∆

Optical Properties

(Cd2SnO4,CdO)

Transition (T %)

(300-900)nm

(a)

(CdO)(300°C)

(300nm)

(900nm)

(60%)

(c),(b)

(88%)(900)nm

(a)

(b)

Tra

nsm

itta

nce (T

%)

Wavelength λ(nm)

(a)(Cd2SnO4)(72%)(900)nm

(70%)(500)°C(b)(Cd2SnO4)

Absorption (A)

(a)

(900nm)

(c),(b)

(Cd2SnO4)

(b,a)

(α)

(α > 104 cm-1)

(a)

(CdO)(CdO)

(c),(b)

(Cd2SnO4)

(b),(a)

(300)°C

(Cd2SnO4, CdO)

-

(αhf)2 = B2 ( hf – Eg )

(a)

(CdO)

(2.31)eV

bc

(a)

(b)

(c)

(a)

(3.3) eV

(b),(c)

(Cd2SnO4)

Reflection Measurement(R)

R +T+A=1

(a)

(CdO)

(c),(b)

(Cd2SnO4)

(b),(a)

Extinction Coefficient Measurement

(K )o

(CdO)

K =o αλ/4π

(a)

(CdO)

(c),(b)

(b),(a)(Cd2SnO4)

Refractive Index Measurement

(nₒ)

n={(1+R)2 / (1-R)2- (Ko2+1)}1/2+(1+R) / (1-R)

(a)(CdO)

(c),(b)

(b),(a)(Cd2SnO4)

Dielectric Constant Measurement (ξ)

ξ1

ξ2

ξ1 = no2- ko

2

ξ2 = 2 no ko

(Real

Part of Dielectric Constant (ξ1))

(a)

(1.38-2.2) eV

(2.2) eV

(CdO)

(c),(b)

(c),(b)

Imaginary Part of Dielectric

Constant (ξ2)

(a)

(1.38-2.4)eV

(CdO)

(c),(b)

(Cd2SnO4)

(b),(a)

Conclusion)

1-CdOCd:5%Sn300°C

Cd2SnO4500,400°C

2-

3-CdOCd2SnO4

4-(CdO)(7-60) %(300-900) nm

(8.5-80)%(300-900) nm

500°C

5-(22-88) %(300-900) nm

(15-70) %

(300-900) nm500°C

6-(CdO,Cd2SnO4) (α>104cm-1)

7-CdO

,

8-Cd2SnO4

,

Future work

1-(CdO)CdxSnO1-x

2-CdxSnO1-x

3-Cd2SnO4, CdO

4-Cd2SnO4, CdO

5-Cd2SnO4