1630 IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 12, DECEMBER 2017

EDL Golden List of Reviewers for 2017

First Name Last Name Affiliation Country

Reza Abdolvand University of Central Florida United StatesShela Aboud Synopsys Inc United StatesGina Adam University of California at Santa Barbara United StatesSheel Aditya Nanyang Technological University SingaporeAryan Afzalian TSMC Europe BV BelgiumRoberto Aga US Air Force Research Laboratory United StatesAmit Agarwal Indian Institute of Technology Kanpur IndiaSapan Agarwal University of California at Berkeley United StatesTarun Agarwal IIT Delhi IndiaHamidreza Aghasi Cornell University United StatesNidhi Agrawal Pennsylvania State University United StatesHo-Kyun Ahn ETRI KoreaSujin Ahn Samsung Electronics Co. Ltd. KoreaArman Ahnood University of Melbourne AustraliaAyayi Ahyi Auburn University United StatesAkintunde Ibitayo(Tayo)

Akinwande Massachusetts Institute of Technology United States

Ozgur Aktas Avogy Inc United StatesAkin Akturk University of Maryland United StatesAshraf Alam Purdue University United StatesAleksandar Aleksov Intel Corporation United StatesDuncan Allsopp University of Bath United KingdomMahdi Aminian University of Guilan IranSalvatore Amoroso Synopsys Inc United KingdomTakashi Ando IBM United StatesSean Andrews Stanford University United StatesDiing Shenp Ang Nanyang Technological University SingaporeKah-Wee Ang National University of Singapore SingaporeAzadeh Ansari University of Michigan United StatesMarina Antoniou University of Cambridge United KingdomJin-Ping Ao University of Tokushima JapanManabu Arai New Japan Radio Co., Ltd. JapanAntonio Arreghini IMEC BelgiumKamal Asadi Max Planck Inst Polymer Research GermanyMojtaba Asadirad Micron Technology Inc United StatesPlamen Asenov Gold Standard Simulations United KingdomShahin Ashtiani University of Tehran IranJoel Asubar University of Fukui JapanYves Audet Ecole Polytechnique de Montreal CanadaKlaus Aufinger Infineon Technologies AG GermanyEmmanuel Augendre CEA LETI MINATEC FranceCharles Augustine Intel Corporation United StatesBrian Aull Massachusetts Institute of Technology United StatesUygar Avci Intel Corporation United StatesYvan Avenas ENSE3 FranceChristophe Avis Kyung Hee University Korea

Digital Object Identifier 10.1109/LED.2017.2767339

0741-3106 © 2017 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.See http://www.ieee.org/publications_standards/publications/rights/index.html for more information.

IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 12, DECEMBER 2017 1631

First Name Last Name Affiliation Country

Angelica Azcatl University of Texas at Dallas United StatesVlad Badilita Karlsruhe Institute of Technology GermanyByung Seong Bae Hoseo University KoreaJoonwon Bae Dongduk Women’s University KoreaKevin Bagnall Massachusetts Institute of Technology United StatesMuhannad Bakir Georgia Institute of Technology United StatesMietek Bakowski Acreo SwedenSriram Balasubramanian GlobalFoundries United StatesSimone Balatti Politecnico di Milano ItalyFrancis Balestra IMEP-LAHC FranceRichard Balmer Element Six Ltd United KingdomKaustav Banerjee University of California at Santa Barbara United StatesKoushik Banerjee Intel Corporation United StatesSanjay Banerjee University of Texas at Austin United StatesMirjana Banjevic Sensirion AG SwitzerlandSurendra Barala Indian Institute of Technology Jodhpur IndiaMassimo Barbaro Università di Cagliari ItalyJennifer Bardwell National Research Council of Canada CanadaHugh Barnaby Arizona State University United StatesAndrew Barnes European Space Agency NetherlandsFrank Barnes University of Colorado United StatesNuria Barniol Universitat Autonoma de Barcelona SpainThomas Basler Infineon Technologies AG GermanyFriedhelm Bauer ABB Switzerland Ltd SwitzerlandAndreas Beling University of Virginia United StatesAttilio Belmonte IMEC BelgiumFrancis Benistant GlobalFoundries SingaporeFouad Benkhelifa Fraunhofer IAF GermanySteven Bentley GlobalFoundries United StatesGennadi Bersuker Aerospace Corporation United StatesMarc Bescond IM2NP FranceWim Besling AMS Netherlands B.V. NetherlandsJoshua Beutler Sandia National Laboratories United StatesRoberto Bez LFoundry Srl ItalyIshwara Bhat Rensselaer Polytechnic Institute United StatesIndrasen Bhattacharya University of California at Berkeley United StatesMaruf Bhuiyan Yale University United StatesKrishna Bhuwalka Samsung Electronics Co. Ltd. KoreaDavide Bisi Transphorm, Inc. United StatesRichard Blanchard Blanchard Associates United StatesAnders Blom QuantumWise A/S DenmarkPieter Blomme IMEC BelgiumJean-Marie Bluet INSA Lyon FranceMarc Bocquet IMEP-CNRS/INPG FranceJanice Boercker US Naval Research Laboratory United StatesJoseph Boisvert Raytheon Co United StatesJeffrey Bokor University of California at Berkeley United StatesColombo Bolognesi ETH Zürich SwitzerlandAlex Bolotnikov GE Global Research United StatesFabrizio Bonani Politecnico di Torino ItalyJulien Borrel STMicroelectronics FranceGianluca Boselli Texas Instruments Inc. United StatesJohan Bourgeat STMicroelectronics FranceTimothy Boykin University of Alabama at Huntsville United StatesBerinder Brar Teledyne United StatesNicolas Breil Applied Materials Inc United States

1632 IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 12, DECEMBER 2017

First Name Last Name Affiliation Country

Kevin Brenner Harper Laboratories, LLC United StatesJonathan Brodsky Texas Instruments Inc. United StatesClaudio Bruschini École Polytechnique Fédérale de Lausanne SwitzerlandMatthias Bucher Technical University of Crete GreeceJoachim Burghartz Institute for Microelectronics Stuttgart GermanyGeoffrey Burr IBM Almaden Research Center United StatesCarlo Cagli CEA Grenoble FranceMarc Cahay University of Cincinnati United StatesYong Cai Suzhou Institute of Nano-Tech & Nano-Bionics ChinaAlessandro Calderoni Micron Semiconductor Italia ItalyKristy Campbell Boise State University United StatesStephen Campbell University of Minnesota United StatesKerem Camsari Purdue University United StatesGiuseppe Cantarella ETH Zürich SwitzerlandKurtis Cantley Boise State University United StatesChen Cao Xi’an Microelectronics Technology Institution ChinaYu Cao HRL Laboratories United StatesAndy Carter University of California at Santa Barbara United StatesCristian Cassella Northeastern University United StatesAntonio Cerdeira CINVESTAV MexicoHo-Young Cha Hongik University KoreaKelson Chabak US Air Force Research Laboratory United StatesYang Chai Hong Kong Polytechnic University Hong KongBhaswar Chakrabarti University of Chicago United StatesAnjan Chakravorty Indian Institute of Technology Madras IndiaMansun Chan Hong Kong University of Science and Technology Hong KongHengky Chandrahalim University of Michigan United StatesChih-Hung Chang Oregon State University United StatesChih-Sheng Chang TSMC TaiwanJiwon Chang University of Texas at Austin United StatesKuan-Chang Chang National Sun Yat-Sen University TaiwanRuey-Dar Chang Chang Gung University TaiwanSheng-Po Chang National Cheng Kung University TaiwanSou-Chi Chang Georgia Institute of Technology United StatesTing-Chang Chang National Sun Yat-Sen University TaiwanWen Hsin Chang National Institute of Advanced Industrial Science

and Technology JapanYao-Wen Chang Macronix International Co. Ltd TaiwanKuei-Shu Chang-Liao National Tsing Hua University TaiwanEdoardo Charbon TU Delft NetherlandsAdrian Chasin IMEC BelgiumAmitava Chatterjee PDF Solutions United StatesAnupam Chattopdhyay Nanyang Technological University SingaporeKiran Chatty Monolith Semiconductor Inc. United StatesYogesh Chauhan Indian Institute of Technology Kanpur IndiaRishu Chaujar Delhi Technological University IndiaBaoxing Chen Analog Devices Inc United StatesChang-Lee Chen Massachusetts Institute of Technology United StatesChao Yang Chen IMEC BelgiumFen Chen Apple United StatesFred Chen Winbond Electronics Corp TaiwanHenry Chen GigaDevice Inc. United StatesJone Chen National Cheng Kung University TaiwanKevin Chen Hong Kong University of Science and Technology Hong KongKuan-Neng Chen National Chiao Tung University TaiwanLin Chen Fudan University ChinaLingyao Chen University of Utah United States

IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 12, DECEMBER 2017 1633

First Name Last Name Affiliation Country

Min-Cheng Chen National Nano Device Laboratories TaiwanPai-Yu Chen Arizona State University United StatesShih-Hung Chen IMEC BelgiumWayne Chen University of California at San Diego United StatesWei-Chen Chen Macronix International Co. Ltd TaiwanWeiZhong Chen University of Electronic Science and

Technology of China ChinaWenchao Chen Zhejiang University ChinaYangyin Chen IMEC/SanDisk BelgiumYenhao Chen University of California at Berkeley United StatesYen-Ting Chen TSMC TaiwanZhizhong Chen Peking University ChinaBinjie Cheng Synopsys Inc United KingdomI-Chun Cheng National Taiwan University TaiwanXiang Cheng University of Cambridge United KingdomYu-Ting Cheng National Chiao Tung University TaiwanKarim Cherkaoui Tyndall National Institute IrelandWinston Chern Massachusetts Institute of Technology United StatesKin Cheung NIST United StatesChristophe Chevallier Kilopass United StatesMeng-Hsueh Chiang National Cheng Kung University TaiwanTe-Kuang Chiang National University of Kaohsiung TaiwanAlessandro Chini Università di Modena e Reggio Emilia ItalyHsien-Chin Chiu Chang Gung University TaiwanIl Hwan Cho Myongji University KoreaKyoungah Cho Korea University KoreaSeongjae Cho Gachon University KoreaSung Haeng Cho ETRI KoreaMunkang Choi Synopsys Inc. United StatesShinhyun Choi Massachusetts Institute of Technology United StatesWu-Ching Chou National Chiao Tung University TaiwanT. Paul Chow Rensselaer Polytechnic Institute United StatesSauvik Chowdhury Monolith Semiconductor Inc. United StatesSrabanti Chowdhury University of California at Davis United StatesJae-Hwan Chu University of California at Santa Barbara United StatesKen Chu BAE Systems United StatesKuan-Wei Chu National Tsing Hua University TaiwanRongming Chu HRL Laboratories United StatesTao Chu Purdue University United StatesMichael Chudzik Applied Materials Inc United StatesChi On Chui University of California at Los Angeles United StatesIlsub Chung Sungkyunkwan University KoreaKwun-Bum Chung Dongguk University KoreaYueh-Ting Chung National Chiao Tung University TaiwanSergiu Clima IMEC BelgiumBrian Cobb PragmatIC United KingdomRobert Coffie RLC Solutions United StatesRamon Collazo North Carolina State University United StatesJuan Colmenares Kungliga Tekniska Hogskolan SwedenBenjamin Colombeau Applied Materials Inc United StatesDaniel Connelly University of California at Berkeley United StatesStefan Cosemans SureCore BelgiumAngela Coves Universidad Miguel Hernandez SpainM. (Adriana) Creatore Eindhoven University of Technology NetherlandsAntonio Crespo Air Force Research Laboratory United StatesBogdan Cretu ENSICAEN FranceSorin Cristoloveanu INPG France

1634 IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 12, DECEMBER 2017

First Name Last Name Affiliation Country

Iain Crowe University of Manchester United KingdomFelice Crupi Università della Calabria ItalyGiovanni Crupi University of Messina ItalyQiang Cui University of Central Florida United StatesLukas Czornomaz IBM Zurich Research Laboratory SwitzerlandMingzhi Dai Ningbo Institute of Material Technology

and Engineering ChinaArnaldo D’Amico university of Roma Tor Vergata ItalyGiang Dang University of Canterbury New ZealandSaptarshi Das Pennsylvania State University United StatesSansaptak Dasgupta Intel Corporation United StatesSuman Datta University of Notre Dame United StatesVojkan Davidovic University of Niš SerbiaC.H. (Kees) de Groot University of Southampton United KingdomAnn De Keersgieter IMEC BelgiumMichelly de Souza Centro Universitario da FEI BrazilLuca De Vico University of Copenhagen DenmarkDavid Deen Naval Research Laboratory United StatesMatthieu Deloge STMicroelectronics FranceRonald DeMara University of Central Florida United StatesWanling Deng College of Information Science and Technology ChinaEugenio Dentoni Litta KTH Royal Institute of Technology SwedenJoff Derluyn EpiGaN BelgiumSanchit Deshmukh Stanford University United StatesSarit Dhar Auburn University United StatesLuigi Di Benedetto University of Salerno ItalyJames Di Sarro Texas Instruments Inc United StatesMichael Dickey North Carolina State University United StatesCharalabos Dimitriadis Aristotle University of Thessaloniki GreeceSima Dimitrijev Giffith University AustraliaGuanghai Ding Analog Devices, Inc. United StatesLili Ding Northwest Institute of Nuclear Technology ChinaShi-Jin Ding Fudan University ChinaVladimir Djara IBM Research GmbH SwitzerlandMehrdad Djavid McGill University CanadaGary Dolny Fairchild Semiconductor United StatesNeus Domingo Institut Català de Nanociència i Nanotecnologia SpainRui Dong University of Nebraska-Lincoln United StatesYingda Dong SanDisk United StatesGerben Doornbos TSMC BelgiumRodrigo Doria Centro Universitário da FEI BrazilWei Dou Hunan University ChinaMircea Dragoman IMT-Bucharest RomaniaFrancesco Driussi Università degli Studi di Udine ItalyPei-Ying Du Macronix International Co. Ltd TaiwanYuchen Du Purdue University United StatesChristian Dua Alcatel-Thales III-V Lab FranceBaoxing Duan Xidian University ChinaEmmanuel Dubois IEMN FranceJean-Yves Duboz CRHEA, CNRS FranceGuillaume Ducournau Lille University FranceRay Duffy Tyndall National Institute IrelandGourab Dutta Indian Institute of Technology Madras IndiaMaitreya Dutta University of California at Davis United StatesAbasifreke Ebong University of North Carolina at Charlotte United StatesMona Ebrish University of Minnesota United StatesCharles Eddy, Jr. US Naval Research Laboratory United States

IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 12, DECEMBER 2017 1635

First Name Last Name Affiliation Country

Heribert Eisele University of Leeds United KingdomMoshe Eizenberg Technion - Israel Institute of Technology IsraelKarim El Sayed Synopsys Inc United StatesSam Emaminejad University of California at Los Angeles United StatesGeert Eneman IMEC BelgiumEge Engin San Diego State University United StatesSukru Burc Eryilmaz Stanford University United StatesTakashi Eshita Fujitsu Semiconductor JapanDavid Esseni Università degli Studi di Udine ItalyPaul Evans University of Wisconsin United StatesAntonio Facchetti Northwestern University United StatesSimon Fafard Université de Sherbrooke CanadaMd Fahad Louisiana State University United StatesFirooz Faili Element Six United StatesDeliang Fan University of Central Florida United StatesXiaosheng Fang Fudan University ChinaAndrea Fantini IMEC BelgiumMuhammad Fahad Farooqui King Abdullah University of Science and Technology Saudi ArabiaMorteza Fathipour University of Tehran IranMarc Faucher IEMN FranceOlutosin Fawole University of Utah United StatesPatrick Fay University of Notre Dame United StatesDaniel Feezell University of New Mexico United StatesMichael Feiginov Technische Universität Darmstadt GermanyJonathan Felbinger Booz Allen Hamilton United StatesPeijie Feng Qualcomm United StatesPhilip Feng Case Western Reserve University United StatesFahmida Ferdousi Intel Corporation United StatesDavid Ferry Arizona State University United StatesMiha Filipic IMEC BelgiumJames Fiorenza Analog Devices Inc. United StatesGianluca Fiori University of Pisa ItalyGerhard Fischer IHP GmbH GermanyDenis Flandre Université Catholique de Louvain BelgiumDan Fleetwood Vanderbilt University United StatesArno Foerster Aachen University of Applied Sciences GermanyEric Fossum Dartmouth College United StatesJerry Fossum University of Florida United StatesWerner Frammelsberger Technische Hochschule Deggendorf GermanyJacopo Franco IMEC BelgiumAaron Franklin Duke University United StatesJacopo Frascaroli CNR-IMM ItalyMartin Frey Synopsys Switzerland LLC SwitzerlandUrs Frey ETH Zürich SwitzerlandLukas Fricke University of New South Wales AustraliaAdam Friedman US Naval Research Laboratory United StatesPeter Friedrichs Infineon Technologies AG GermanyFred Yue Fu Crosslight Software,Inc. CanadaShosuke Fujii Toshiba Corporation JapanJun Fujiki Toshiba Corporation JapanYoshihide Fujisaki NHK Science and Technical Research Lab JapanNaoto Fujishima Fuji Electric Co. Ltd. GermanyShizuo Fujita Kyoto University JapanKoichi Fukuda AIST JapanTakafumi Fukushima Tohoku University JapanYoshiaki Fukuzumi Toshiba Corporation JapanCarsten Funck Forschungszentrum Jülich GmbH Germany

1636 IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 12, DECEMBER 2017

First Name Last Name Affiliation Country

Mamoru Furuta Kochi University of Technology JapanAlexander Gagarin Saint Petersburg Electrotechnical University “LETI” RussiaMarc Gaillardin CEA FrancePhilippe Galy STMicroelectronics FranceAlberto Gambi Università degli Studi di Udine ItalyFrancisco Gamiz Universidad de Granada SpainKartik Ganapathi Intel Corporation United StatesBin Gao Tsinghua University ChinaXuan Gao Case Western Reserve University United StatesDaniele Garbin IMEC BelgiumFrancisco Garcia-Sanchez Universidad Simon Bolivar VenezuelaDonald Gardner Intel Research United StatesXavier Garros CEA Grenoble FranceD. Kurt Gaskill US Naval Research Laboratory United StatesSimone Gerardin Università di Padova ItalyNadine Gergel-Hackett Mary Baldwin University United StatesReza Ghandi GE Global Research United StatesAndrea Ghetti Micron Semiconductor Italia ItalyGérard Ghibaudo IMEP-LAHC FranceMatteo Ghittorelli Università degli Studi di Brescia ItalyStephen Giblin National Physical Laboratory United KingdomMartin Giles Intel Corporation United StatesSalvador Gimenez Centro Universitário da FEI BrazilElena Gnani Università di Bologna ItalyAntonio Gnudi Università di Bologna ItalyAkira Goda Micron Technology Inc United StatesJyh-Rong Gong National Chung-Hsing University TaiwanSongbin Gong University of Illinois United StatesAjit Gopalakrishnan University of Texas at Austin United StatesHarald Gossner Intel Corporation GermanyTetsuya Goto Tohoku University JapanNitin Goyal CTR Carinthian Tech Research AG AustriaTibor Grasser Technische Universität Wien AustriaGerd Grau York University CanadaDirk Gravesteijn Universiteit Twente MESA+ NetherlandsMichael Grieb Robert-Bosch GmbH GermanyPeter Griffin Stanford University United StatesAlessandro Grossi CEA LETI FranceMarius Grundmann Universität Leipzig GermanyYuandong Gu Institute of Microelectronics, A*STAR SingaporeJing Guo University of Florida United StatesLiqiang Guo Micro/Nano Science & Technology Center ChinaTzung-Fang Guo National Cheng Kung University TaiwanXiaojun Guo Shanghai Jiao Tong University ChinaYufeng Guo Nanjing University of Posts and Telecommunications ChinaGeetak Gupta Transphorm Inc. United StatesShashank Gupta Stanford University United StatesTae-Jun Ha University of Texas at Austin United StatesMd Abdullah Al Hafiz King Abdullah University of Science and Technology Saudi ArabiaAnders Hallén KTH Royal Institute of Technology SwedenJin-Woo Han NASA Ames Research Center United StatesSang Youn Han Samsung Electronics Co. Ltd. KoreaShu-Jen Han IBM T.J. Watson Research Center United StatesRazi-ul Haque Structured Microsystems LLC United StatesAkito Hara Tohoku Gakuin University Japan

IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 12, DECEMBER 2017 1637

First Name Last Name Affiliation Country

Shinsuke Harada National Institute of Advanced IndustrialScience and Technology Japan

Matthew Hardy Naval Research Laboratory United StatesMohammad Hasanuzzaman GlobalFoundries United StatesHideki Hasegawa Hokkaido University JapanTetsuya Hasegawa University of Tokyo JapanPouya Hashemi IBM Corporation United StatesKazushi Hayashi Kobe Steel, Ltd. JapanJr-Hau He King Abdullah University of Science and Technology Saudi ArabiaYu He Synopsys Inc United StatesZhi He Institute of Semiconductors ChinaGanesh Hegde Samsung Semiconductor Inc United StatesDawei Heh TSMC TaiwanErik Heijne CERN SwitzerlandBernd Heinemann IHP GmbH GermanyJohannes Heitmann Technical University Bergakademie Freiberg GermanyEric Heller Air Force Research Laboratory United StatesGertjan Hemink SanDisk JapanRobert Henderson University of Edinburgh United KingdomHaldane Henry Qorvo United StatesGregory Herman Oregon State University United StatesMasataka Higashiwaki National Institute of Information and

Communications Technology JapanOliver Hilt FBH Berlin GermanyChristopher Hinkle University of Texas at Dallas United StatesMasato Hiramatsu Toshiba Mobile Display Co., Ltd. JapanYoshiro Hirayama Tohoku University JapanHarold Hjalmarson Sandia National Laboratories United StatesKarl Hobart Naval Research Laboratory United StatesChris Hobbs SUNYPoly CNSE United StatesMojtaba Hodjat-Shamami Georgia Institute of Technology United StatesKlaus Hoffmann Helmut-Schmidt-Universität/Universität der

Bundeswehr Hamburg GermanyAlexander Hölke X-FAB MalaysiaYongtaek Hong Seoul National University KoreaMatthew Hopcroft Red Dog Research United StatesNaoto Horiguchi IMEC BelgiumRay-Hua Horng National Chiao Tung University TaiwanHideo Hosono Tokyo Institute of Technology JapanMinmin Hou Stanford University United StatesTuo-Hung Hou National Chiao Tung University TaiwanKen Hsieh Macronix International Co. Ltd TaiwanCheng-Liang Hsu National University of Tainan TaiwanHeng-Ming Hsu National Chung-Hsing University TaiwanShawn Hsu National Tsing Hua University TaiwanWensyang Hsu National Chiao Tung University TaiwanChengqing Hu University of Texas at Austin United StatesChenming Hu University of California at Berkeley United StatesHsin-Hui Hu National Taipei University of Technology TaiwanJie Hu Massachusetts Institute of Technology United StatesLong Hu Xi’an Jiaotong University ChinaQuanli Hu Myongji University KoreaZhaoying Hu GlobalFoundries United StatesZhirun Hu University of Manchester United KingdomZongyang Hu Cornell University United StatesAlex Huang North Carolina State University United StatesChih-Fang Huang National Tsing Hua University Taiwan

1638 IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 12, DECEMBER 2017

First Name Last Name Affiliation Country

JianJang Huang National Taiwan University TaiwanJin Huang Southern Methodist University United StatesSen Huang Institute of Microelectronics ChinaTongde Huang Chalmers University of Technology SwedenBoris Hudec National Chiao Tung University TaiwanRaymond Hueting University of Twente NetherlandsPeter Huggard STFC Rutherford Appleton Laboratory United KingdomYu Hui Northeastern University United StatesJaehyun Hur Gachon University KoreaPaul Hurley Tyndall National Institute IrelandMuhammad Hussain King Abdullah University of Science and Technology Saudi ArabiaCheol Seong Hwang Seoul National University KoreaChi-Sun Hwang ETRI KoreaEugene Hwang Analog Devices, Inc. United StatesHyunsang Hwang Pohang University of Science and Technology KoreaKeisuke Ide Tokyo Institute of Technology JapanDaniele Ielmini Politecnico di Milano ItalyKiki Ikossi Defense Threat Reduction Agency United StatesHesameddin Ilatikhameneh Purdue University United StatesKiju Im Samsung Mobile Display KoreaKi-Sik Im Kyungpook National University KoreaKiyotaka Imai Samsung Electronics Co. Ltd KoreaBenjamin Iñiguez Universitat Rovira i Virgili SpainNaoya Inoue Samsung Electronics Co. Ltd KoreaDimitris Ioannou George Mason University United StatesAdrian Mihai Ionescu École Polytechnique Fédérale de Lausanne SwitzerlandKoichi Ishida Technische Universität Dresden GermanyYasuaki Ishikawa Nara Institute of Science and Technology JapanKazunari Ishimaru Advanced Memory LSI RandD Center JapanAhmad Islam Air Force Research Laboratory United StatesAmmar Issaoun Institute of Microelectronics SingaporeTony Ivanov US Army Research Laboratory United StatesWarren Jackson Hewlett-Packard Laboratories United StatesKristof Jacobs University of Sheffield United KingdomAlfonso Torres Jacome INAOE MexicoNikhil Jain National Renewable Energy Laboratory United StatesMustafa Jamil Intel Corporation United StatesBabak Jamshidi STATS ChipPAC Ltd United StatesJin Jang Kyung Hee University KoreaSoohwan Jang Dankook University KoreaAnwar Jarndal Hodeidah University YemenEmil Jelenkovic Hong Kong Polytechnic University Hong KongJae Kyeong Jeong Hanyang University KoreaJoseph Jesudass Nagoya Insitute of Technology JapanDong Ji Arizona State University United StatesZhigang Ji Liverpool John Moores University United KingdomZhuoyu Ji Institute of Microelectronics ChinaHuaping Jiang Dynex Semiconductor Ltd United KingdomRyan Jiang AMAZING Microelectronic Corp. TaiwanZhengping Jiang Purdue University United StatesJuan Jimenez Tejada Universidad de Granada SpainJidong Jin Durham University United KingdomYi Jing University of California at San Diego United StatesSatyabrata Jit IIT(BHU) IndiaJaesung Jo University of Seoul KoreaJungwoo Joh Texas Instruments Inc United StatesYu Chang Jong TSMC Taiwan

IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 12, DECEMBER 2017 1639

First Name Last Name Affiliation Country

Alvin Joseph GlobalFoundries United StatesSaumil Joshi University of Massachusetts United StatesColin Joye Naval Research Laboratory United StatesAndre Juge STMicroelectronics FranceSunghun Jung Seoul National University KoreaTetsu Kachi Nagoya Daigaku JapanKarol Kalna Swansea University United KingdomAnisha Kalra Indian Institute of Science IndiaPankaj Kalra SanDisk United StatesHei Kam Intel Corporation United StatesDeepak Kamalanathan Adesto Technologies United StatesNando Kaminski University of Bremen GermanyToshio Kamiya Tokyo Institute of Technology JapanEdwin Kan Cornell University United StatesMasakazu Kanechika Toyota Central R&D Labs., Inc. JapanDaehwan Kang Samsung Electronics Co. Ltd. KoreaJinfeng Kang Peking University ChinaJong-chan Kang HRL Laboratories United StatesRowaida Kanj American University of Beirut LebanonTzu-Cheng Kao TSMC TaiwanRobert Kaplar Sandia National Laboratories United StatesGouri Kar IMEC BelgiumEric Karl Intel TMG United StatesShreepad Karmalkar Indian Institute of Technology IndiaIlya Karpov Intel Corporation United StatesIrina Kataeva DENSO Corporation JapanHoward Katz John Hopkins University United StatesThomas Kazior Raytheon RF Components United StatesKouno Kazuyuki Panasonic Semiconductor Solutions, Co., Ltd. JapanAnthony Kelly University of Glasgow United KingdomMichael Kelly University of Cambridge United KingdomMing-Dou Ker National Chiao Tung University TaiwanAndreas Kerber GlobalFoundries United StatesAndrew Ketterson Qorvo United StatesAli Khakifirooz Intel Corporation United StatesAsif Khan Georgia Institute of Technology United StatesQuazi Khosru Bangladesh University of Engineering and Technology BangladeshWin-San Khwa National Tsing Hua University TaiwanAhmed Kiani New York University United StatesValeriya Kilchytska Université Catholique de Louvain BelgiumAlex Kildishev Purdue University United StatesChris Kim University of Minnesota United StatesDae Hwan Kim Kookmin University KoreaDong Myong Kim Kookmin University KoreaHyun Jae Kim Yonsei University KoreaHyungjin Kim Seoul National University KoreaHyungtak Kim Hongik University KoreaHyun-Suk Kim Chungnam National University KoreaJun-Youn Kim Samsung KoreaKyung Rok Kim Ulsan National Institute of Science and Technology KoreaKyung Soo Kim Samsung Electronics Hwaseong Site KoreaRaseong Kim Intel Corporation United StatesSang-Hyeon Kim Korea Institute of Science and Technology KoreaSangwan Kim University of California at Berkeley KoreaTaewoo Kim University of Ulsan KoreaYongSeok Kim Samsung Electronics Co. Ltd KoreaTsunenobu Kimoto Kyoto University Japan

1640 IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 12, DECEMBER 2017

First Name Last Name Affiliation Country

Mutsumi Kimura Ryukoku University JapanSean King Intel Corporation United StatesYa-Chin King National Tsing Hua University TaiwanWiley Kirk University of Texas at Dallas United StatesMasaharu Kobayashi University of Tokyo JapanAndrew Koehler US Naval Research Laboratory United StatesSteven Koester University of Minnesota United StatesErhard Kohn University of Ulm GermanyYasuo Koide National Institute for Materials Science JapanSatoshi Koizumi National Institute for Materials Science JapanPhilipp Komissinskiy Technische Universität Darmstadt GermanyAndrei Konstantinov Fairchild Semiconductor SwedenRoza Kotlyar Intel Corporation United StatesAlexander Kozyrev University of Wisconsin-Madison United StatesAbhinav Kranti Indian Institute of Technology Indore IndiaFranz Kreupl Technische Universität Munchen GermanyJacob Krich University of Ottawa CanadaSriram Krishnamoorthy Ohio State University United StatesVijay Krishnamurthy National Semiconductor United StatesZoran Krivokapic Advanced Micro Devices Inc. United StatesViktor Krozer Goethe University of Frankfurt am Main GermanyChaitanya Kshirsagar Peregrine Semiconductor Corp United StatesWitold Kula Micron Technology Inc United StatesVachan Kumar Georgia Institute of Technology United StatesHideya Kumomi Tokyo Institute of Technology JapanPragya Kushwaha Indian Institute of Technology Kanpur IndiaJán Kuzmík Slovak Academy of Sciences SlovakiaMasaaki Kuzuhara University of Fukui JapanDuygu Kuzum University of California at San Diego United StatesHyuck-In Kwon Chung-Ang University KoreaHyuk Min Kwon SK Hynix Inc KoreaOh-Kyong Kwon Hanyang University KoreaPeter Lai University of Hong Kong Hong KongStefano Lai Università di Cagliari ItalyKai-Tak Lam TSMC TaiwanBenoit Lambert UMS FranceMario Lanza Soochow University ChinaLuca Larcher Università di Modena e Reggio Emilia ItalyMatthew Laurent University of California at Davis United StatesJean-Pierre Leburton University of Illinois at Urbana-Champaign United StatesByoung Hun Lee Gwangju Institute of Science and Technology KoreaChengkuo Lee National University of Singapore SingaporeHelen Lee Synopsys Inc TaiwanHi-Deok Lee Chungnam National University KoreaHojin Lee Soongsil University KoreaHyung-Seok Lee ETRI KoreaJaegoo Lee Samsung Electronics Co. Ltd KoreaJaehong Lee Samsung KoreaJae-Sung Lee Uiduk University KoreaJiyoul Lee Pukyong National University KoreaJong-Ho Lee Seoul National University KoreaJoshua Lee City University of Hong Kong Hong KongJung Hyuk Lee Samsung Electronics Co. Ltd. KoreaJung-Hee Lee Kyungpook National University KoreaKung-Yen Lee National Taiwan University TaiwanMeng-Chia Lee Onsemi Inc. United StatesMin-Hung Lee National Taiwan Normal University Taiwan

IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 12, DECEMBER 2017 1641

First Name Last Name Affiliation Country

Rinus Lee GlobalFoundries United StatesSangYoon Lee Samsung Advanced Institute of Technology KoreaSiwoo Lee Micron Technology Inc United StatesSungsik Lee Pusan National University KoreaTsong-Shing Lee Southern Taiwan University of Science

and Technology TaiwanWi Hyoung Lee Konkuk University KoreaMax Lemme University of Siegen GermanyPawel Lenarczyk ETH Zürich SwitzerlandAndreas Lesch École Polytechnique Fédérale de Lausanne SwitzerlandGuijun Li Hong Kong University of Science and Technology Hong KongHaitong Li Stanford University United StatesJun Li Shanghai University ChinaMing Li Peking University ChinaMingda Li Cornell University United StatesSheng-Shian Li National Tsing Hua University TaiwanWenshen Li Cornell University United StatesXiuling Li University of Illinois United StatesZhaoji Li University of Electronic Science and

Technology of China ChinaZhongda Li Rensselaer Polytechnic Institute United StatesChuaxin Lian MACOM United StatesGengchiau Liang National University of Singapore SingaporeWei Liang Stanford University United StatesYung C. Liang National University of Singapore SingaporeDaniel Lichtenwalner CREE, Inc. United StatesWei-Cheng Lien University of California at Berkeley United StatesRosalba Liguori University of Salerno ItalyChwee Teck Lim National University of Singapore SingaporeChe-Hsin Lin National Sun Yat-Sen University TaiwanChih-Lung Lin National Cheng Kung University TaiwanChrong Jung Lin National Tsing Hua University TaiwanHao-Hsiung Lin National Taiwan University TaiwanHorng-Chih Lin National Chiao Tung University TaiwanJianqiang Lin Argonne National Laboratory United StatesKevin Lin Intel Corporation United StatesRichard Lin Synopsys Inc TaiwanSheng-Di Lin National Chiao Tung University TaiwanShisheng Lin Zhejiang University ChinaYuan Lin University of Electronic Science and

Technology of China ChinaYu-Ming Lin IBM T.J. Watson Research Center United StatesZhongyu Lin CSMC ChinaErik Lind Lund University SwedenJuin Liou University of Central Florida United StatesBo Liu University of Florida United StatesChangze Liu Samsung Electronics Co. Ltd. ChinaChee Wee Liu National Taiwan University TaiwanHuichu Liu Intel Corporation United StatesJian Liu RF Micro Devices United StatesJiangwei Liu National Institute for Materials Science JapanKefu Liu Fudan University ChinaLifang Liu Institute of Microelectronics ChinaMing Liu Institute of Microelectronics ChinaPo-Tsun Liu National Chiao Tung University TaiwanWen-Chau Liu National Cheng Kung University TaiwanYang Liu Sun Yat-sen University China

1642 IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 12, DECEMBER 2017

First Name Last Name Affiliation Country

Zhihong Liu Singapore-MIT Alliance for Research and Technology SingaporeZhiwei Liu University of Electronic Science and

Technology of China ChinaDaniel Lizzit Università degli Studi di Udine ItalyJames Lloyd SUNY Albany United StatesSaurabh Lodha Indian Institute of Technology Bombay IndiaPengyu Long Purdue University United StatesShibing Long Chinese Academy of Sciences ChinaGiorgia Longobardi Cambridge University United KingdomXi Sung Loo GlobalFoundries SingaporeNeophytos Lophitis Coventry University United KingdomMichael Lorenz Universität Leipzig GermanyBin Lu Cambridge Electronics Inc United StatesHai Lu Nanjing University ChinaHao Lu University of Notre Dame United StatesHsin-Chia Lu National Taiwan University TaiwanJengPing Lu Palo Alto Reseach Center United StatesNanshu Lu University of Texas at Austin United StatesQiang Lu Synopsys Inc. United StatesTao-Cheng Lu Macronix International Co. Ltd TaiwanYeqing Lu Synopsys Inc. United StatesZhichao Lu Rambus Inc. United StatesMathieu Luisier ETH Zürich SwitzerlandLidia Lukasiak Warsaw University of Technology PolandMark Lundstrom Purdue University United StatesXiao Rong Luo University of Electronic Science and

Technology of China ChinaBjörn Lüssem Kent State University United StatesJosef Lutz Chemnitz University of Technology GermanyHongming Lyu Rice University United StatesHanbin Ma University of Cambridge United KingdomNan Ma Cornell University United StatesWan Joo Maeng University of Wisconsin-Madison United StatesRavi Mahajan Intel Corporation United StatesSantanu Mahapatra Indian Institute of Science IndiaSouvik Mahapatra Indian Institute of Technology Bombay IndiaSiddheswar Maikap Chang Gung University TaiwanPrashant Majhi Intel Corporation United StatesKausik Majumdar Indian Institute of Science IndiaDavide Mantegazza Intel Corporation United StatesAlan Mantooth University of Arkansas United StatesYuliang Mao Xiangtan University ChinaTroels Markussen QuantumWise DenmarkAndrew Marshall University of Texas at Dallas United StatesIgnacio Martin-Bragado Synopsys Inc United StatesRodrigo Martins New University of Lisbon PortugalCarlos Mastrangelo University of Utah United StatesMichael Mastro Naval Research Laboratory United StatesWitek Maszara Advanced Micro Devices Inc. United StatesElison Matioli École Polytechnique Fédérale de Lausanne SwitzerlandTomoko Matsudai Toshiba Corporation JapanLiam McDaid University of Ulster United KingdomGlen McHale Northumbria University United KingdomFarid Medjdoub IEMN - CSAM FranceAdnan Mehonic UCL United KingdomIsrael Mejia University of Texas at Dallas United StatesGaudenzio Meneghesso Università di Padova Italy

IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 12, DECEMBER 2017 1643

First Name Last Name Affiliation Country

Matteo Meneghini Università di Padova ItalyStephan Menzel Forschungszentrum Jülich GmbH GermanyAbdelkarim Mercha IMEC BelgiumFeng Miao Hewlett-Packard Laboratories United StatesXin Miao IBM Research at Albany Nanotech United StatesCarmine Miccoli Politecnico di Milano ItalyRais Miftakhutdinov Texas Instruments Inc United StatesAndrei Mihaila ABB Switzerland Ltd SwitzerlandSlobodan Mijalkovic Silvaco Europe United KingdomThomas Mikolajick NaMLab GmbH GermanyCampbell Millar Synopsys, Inc. United KingdomRenato Minamisawa Fachhochschule Nordwestschweiz Hochschule

fur Technik SwitzerlandTadaharu Minato Mitsubishi Electric Corporation JapanIvan Minev Technische Universität Dresden GermanyRainer Minixhofer AMS AG AustriaEnrique Miranda Universidad Autonoma de Barcelona SpainUmesh Mishra University of California at Santa Barbara United StatesJérôme Mitard IMEC BelgiumYasuyuki Miyamoto Tokyo Institute of Technology JapanPeter Moens ON Semiconductor BelgiumJoel Molina INAOE MexicoCarlos Galup Montoro Federal University of Santa Catarina BrazilChristian Monzio Compagnoni Politecnico di Milano ItalyKristof Moors University of Luxembourg LuxembourgYi-Shien Mor TSMC TaiwanDavid Moran University of Glasgow United KingdomNobuya Mori Osaka University JapanDallas Morisette Purdue University United StatesYukinori Morita AIST JapanDaniel Morris Intel Corporation United StatesKirsten Moselund IBM Research GmBH SwitzerlandMichael Mruczkiewicz Slovak Academy of Sciences SlovakiaNiloy Mukherjee Intel Corporation United StatesHalid Mulaosmanovic NaMLab gGmbH GermanyAlexandru Muller IMT Bucharest RomaniaJohannes Müller Fraunhofer Institute for Photonic Microsystems IPMS GermanyNiko Münzenrieder University of Sussex United KingdomRoberto Murphy INAOE MexicoYuri Musienko CERN SwitzerlandMasayoshi Nagao National Institute of Advanced Industrial

Science and Technology JapanTadao Nagatsuma Osaka University JapanJunichi Nakamura Brillinics Japan Inc JapanFranck Nallet Synopsys Switzerland LLC SwitzerlandSang Hee Nam Inje University KoreaSungWoo Nam University of Illinois at Urbana-Champaign United StatesTakuma Nanjo Mitsubishi Electric Corporation JapanEttore Napoli Università di Napoli ItalyAravind Narayanan Tokyo Institute of Technology JapanSudarshan Narayanan GlobalFoundries United StatesFederico Nardi SanDisk United StatesDario Narducci Università degli Studi di Milano-Bicocca ItalyMuhammad Nawaz ABB Switzerland Ltd SwedenDeepak Nayak GlobalFoundries United StatesAdam Neal Air Force Research Laboratory United StatesGeok Ing Ng Nanyang Technological University Singapore

1644 IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 12, DECEMBER 2017

First Name Last Name Affiliation Country

Tse Nga Ng University of California at San Diego United StatesHui Nie Avogy Inc United StatesFranz-Josef Niedernostheide Infineon Technologies AG GermanyDmitri Nikonov Intel Corporation United StatesTakeki Ninomiya SanDisk JapanTomonori Nishimura University of Tokyo JapanGang Niu Xi’an Jiaotong University ChinaGuofu Niu Auburn University United StatesTaiji Noda Panasonic Corporation JapanKazuki Nomoto University of Notre Dame United StatesKenji Nomura Tokyo Institute of Technology JapanBozidar Novakovic Lumerical Solutions, Inc. CanadaToshinori Numata Toshiba Corporation JapanAhmad Nusir University of Arkansas United StatesJoachim Oberhammer KTH-Royal Institute of Technology SwedenBorna Obradovic Samsung Semiconductor Inc. United StatesColm O’Dwyer University College Cork National University of Ireland IrelandHyungrock Oh IMEC BelgiumSaeroonter Oh Hanyang University KoreaAkiko Ohata Osaka City University JapanYutaka Ohno Nagoya University JapanTohru Oka Toyoda Gosei Co., Ltd. JapanDai Okamoto University of Tsukuba JapanKen Okano Kokusai Kirisutokyo Daigaku JapanRobert Okojie NASA Glenn Research Center United StatesSerge Oktyabrsky SUNY Polytechnic Institute United StatesHironori Okumura University of Tsukuba JapanPhil Oldiges IBM United StatesYasuhisa Omura Kansai University JapanClemens Ostermaier Infineon Technologies AG AustriaHiroyuki Ota National Institute of Advanced Industrial

Science and Technology JapanKensuke Ota Toshiba Corporation JapanRichard Oxland TSMC Research Center United StatesSunhom Paak Huawei Technologies Co Ltd ChinaAndrea Padovani MDLab s.r.l. ItalyGirish Pahwa Indian Institute of Technology Kanpur IndiaPradeep Pai Intel Corporation United StatesSoumitra Pal Hong Kong University of Science and Technology Hong KongVipindas Pala Maxim Integrated Products Inc United StatesPierpaolo Palestri Università degli Studi di Udine ItalyFelix Palumbo CNEA-CAC ArgentinaAndrew Pan University of California at Los Angeles United StatesTung-Ming Pan Chang Gung University TaiwanDebashis Panda National Institute of Science and Technology IndiaClaudio Paoloni Lancaster University United KingdomGiovanni Paolucci Micron Technology Inc. ItalyNikolas Papadopoulos University of Waterloo CanadaGeorge Papaioannou University of Athens GreeceBong-Ryeol Park Hongik University KoreaChanho Park Vishay Siliconix United StatesKyung Hyun Park ETRI KoreaNae-Man Park ETRI KoreaSang-Hee Park KAIST KoreaSeong Geon Park Samsung Electronics Co. Ltd. KoreaSung Kyu Park Chung-Ang University KoreaPaolo Pavan Università di Modena e Reggio Emilia Italy

IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 12, DECEMBER 2017 1645

First Name Last Name Affiliation Country

Marcelo Pavanello Centro Universitario da FEI BrazilStephen Pearton University of Florida United StatesYanli Pei Sun Yat-Sen University ChinaZingway Pei National Chung Hsing University TaiwanAlice Pelamatti ISAE FranceFabio Pellizzer Numonyx ItalySameer Pendharkar Texas Instruments Inc. United StatesRobert Perricone University of Notre Dame United StatesYuriy Pershin University of South Carolina United StatesRebecca Peterson University of Michigan United StatesMartin Pfost Reutlingen University GermanyHoang-Phuong Phan Griffith University AustraliaLuong Viêt Phung Laboratoire Ampere FranceGiuseppe Piccolboni CEA Grenoble FranceRodrigo Picos Universitat de les Illes Balears SpainClaudio Piemonte Fondazione Bruno Kessler ItalyAmirabbas Pirouz Georgia Institute of Technology United StatesDominique Planson Université de Lyon FranceRui Qi Png National University of Singapore SingaporeDionyz Pogany Technische Universität Wien AustriaGeorge Ponchak NASA Glenn Research Center United StatesEric Pop Stanford University United StatesNiels Posthuma Katholieke Universiteit Leuven BelgiumVincent Pott GlobalFoundries SingaporeAli Pourghaderi Samsung Electronics Co. Ltd KoreaMichael Povolotskyi Purdue University United StatesAmit Prakash Pohang University of Science and Technology KoreaSascha Preu Universität Erlangen-Nürnberg GermanyMirko Prezioso University of California at Santa Barbara United StatesLuis Procel Università della Calabria ItalyWerner Prost University Duisburg-Essen GermanyHenryk Przewłocki Institute of Electron Technology PolandSuan Hui Pu University of Southampton Malaysia Campus MalaysiaFrancesco Maria Puglisi Università di Modena e Reggio Emilia ItalyRaj Pulugurtha Georgia Institute of Technology United StatesSrinivas Pulugurtha Micron Technology Inc United StatesChuang Qian University of California at Berkeley United StatesLibo Qian Ningbo University ChinaZudian Qin Synopsys Inc United StatesXunlin Qiu Universitat Potsdam GermanyRaymond Quéré XLIM-CNRS-University of Limoges FranceBhagwan Raad Indian Institute of Information Technology,

Design and Manufacturing IndiaUjwal Radhakrishna Indian Institute of Technology Madras IndiaRahul Radhakrishnan Global Power Technologies Group United StatesIuliana Radu IMEC BelgiumNagarajan Raghavan Singapore University of Technology and Design SingaporeAmir Rahafrooz Qualtré, Inc. United StatesHafizur Rahaman Bengal Engg. & Sc. University,Shibpur IndiaMunaf Rahimo ABB Switzerland Ltd SwitzerlandArifur Rahman Altera United StatesRajib Rahman Purdue University United StatesAmritesh Rai University of Texas at Austin United StatesMina Rais-Zadeh University of Michigan United StatesNitin Rajan University of California at Santa Barbara United StatesBipin Rajendran IBM T.J. Watson Research Center United StatesShaloo Rakheja New York University United States

1646 IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 12, DECEMBER 2017

First Name Last Name Affiliation Country

Shriram Ramanathan Purdue University United StatesAlireza Ramezany University of Texas at Dallas United StatesKrishnaswamy Ramkumar Cypress Semiconductor United StatesSandro Rao Università Mediterranea di Reggio Calabria ItalyJean-Pierre Raskin Université Catholique de Louvain BelgiumMartin Rau ETH Zürich SwitzerlandBalaguru Rayappan SASTRA University IndiaSusanna Reggiani Università di Bologna ItalyKlaus Reimann NXP Semiconductors NetherlandsHe Ren Applied Materials Inc United StatesYou Seung Rim Yonsei University KoreaNiccolo Rinaldi Università di Napoli ItalyRafael Rios Samsung United StatesJohn Robertson Cambridge University United KingdomFabrizio Roccaforte CNR-IMM ItalySaul Rodriguez KTH Royal Institute of Technology SwedenMark Rodwell University of California at Santa Barbara United StatesYakov Roizin Tower Semiconductor Ltd. IsraelJuan Roldán Universidad de Granada SpainTommaso Rollo Università degli Studi di Udine ItalyBrian Romanczyk University of California at Santa Barbara United StatesSean Rommel Rochester Institute of Technology United StatesAnirban Roy NXP Semiconductors United StatesV. A. L. Roy City University of Hong Kong Hong KongMatthias Rudolph Brandenburg University of Technology GermanyHolger Ruecker IHP GmbH GermanyIlya Rumyantsev Synopsys Inc United StatesRoland Rupp Infineon Technologies AG GermanyStephen Russell University of Warwick United KingdomPhil Rutter Nexperia United KingdomSei-Hyung Ryu Wolfspeed, Inc United StatesSeung Wook Ryu SK-Hynix Inc KoreaOmair Saadat Massachusetts Institute of Technology United StatesAngada Sachid University of California at Berkeley United StatesAlexei Sadovnikov Texas Instruments Inc United StatesAli Saeidi École Polytechnique Fédérale de Lausanne SwitzerlandRedwan Sajjad Massachusetts Institute of Technology United StatesRamon Salazar GlobalFoundries United StatesJavier Salcedo Analog Devices Inc United StatesArash Salemi Purdue University United StatesJean-Michel Sallese École Polytechnique Fédérale de Lausanne SwitzerlandMarco Sambi STMicroelectronics ItalyChris Sanabria Qorvo United StatesChristian Sandow Infineon Technologies AG GermanySaurabh Sant ETH Zürich SwitzerlandMasahiro Sasaki University of Tsukuba JapanPaul Saunier Qorvo United StatesRaghvendra Saxena Solid State Physics Labotarory IndiaPaolo Scarbolo Università degli Studi di Udine ItalyLeif Scheick Jet Propulsion Laboratory United StatesRonald Schrimpf Vanderbilt University United StatesUwe Schroeder NaMLab GmbH GermanyMichael Schuette Air Force Research Laboratory United StatesJoel Schulman Aerospace Corporation United StatesHans-Joachim Schulze Infineon Technologies AG GermanyUdo Schwalke Technische Universität Darmstadt GermanyDavid Schwartz Palo Alto Reseach Center United States

IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 12, DECEMBER 2017 1647

First Name Last Name Affiliation Country

Frank Schwierz Technische Universität Ilmenau GermanyJonathan Scott University of Waikato New ZealandAlan Seabaugh University of Notre Dame United StatesGrzegorz Sek Wrocław University of Technology PolandSiegfried Selberherr Technische Universität Wien AustriaAbbas Semnani Purdue University United StatesBerardi Sensale-Rodriguez University of Utah United StatesSylvain Sergent EasyGaN FrancePeyman Servati University of British Columbia CanadaYudi Setiawan GlobalFoundries SingaporeSimone Severi IMEC BelgiumDavood Shahrjerdi New York University United StatesAbhishek Sharma Intel Corporation United StatesAnkit Sharma Purdue University United StatesRoey Shaviv Applied Materials Inc United StatesChao Shen King Abdullah University of Science and Technology Saudi ArabiaJohn Shen Illinois Institute of Technology United StatesTzer-Min Shen TSMC TaiwanKuang Sheng Zhejiang University ChinaScott Sheppard CREE, Inc. United StatesDavid Sheridan Alpha and Omega Semiconductor United StatesShahab Shervin University of Houston United StatesJinn-Kong Sheu National Cheng Kung University TaiwanJian Shi Rensselaer Polytechnic Institute United StatesJianwu Shi Henan University ChinaAyman Shibib Vishay Siliconix United StatesJia-Min Shieh National Nano Device Laboratories TaiwanNaoteru Shigekawa Osaka City University JapanChanghwan Shin University of Seoul KoreaChansoo Shin Korea Advanced Nano-Fab Center KoreaHyungcheol Shin Seoul National University KoreaYong Hyeon Shin Yonsei University KoreaGautam Shine Stanford University United StatesKeisuke Shinohara Teledyne Scientific & Imaging United StatesNaoki Shinohara Kyoto University JapanMayank Shrivastava Indian Institute of Science Bangalore IndiaNikhil Shukla University of Notre Dame United StatesArturo Sibaja-Hernandez IMEC BelgiumGilles Sicard CEA LETI FranceRalf Siemieniec Infineon Technologies AG AustriaScott Sills Micron Technology Inc. United StatesMarco Silvestri Infineon Technologies AG AustriaGrigory Simin University of South Carolina United StatesEddy Simoen IMEC BelgiumJohnny Sin Hong Kong University of Science and Technology Hong KongGaurav Singh ON Semiconductor BelgiumUttam Singisetti University at Buffalo United StatesKushagra Sinha University of Utah United StatesHongyun So Stanford University United StatesJoon Sohn Stanford University United StatesVictor Soler Instituto de Microelectronica de Barcelona SpainJohannes Solhusvik OmniVision Technologies Norway AS NorwayPaul Solomon IBM T.J. Watson Research Center United StatesBo Song Cornell University United StatesYi Song IBM Research United StatesYuncheng Song GlobalFoundries United StatesKen’ichiro Sonoda Renesas Technology Corporation Japan

1648 IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 12, DECEMBER 2017

First Name Last Name Affiliation Country

Bart Sorée IMEC BelgiumEmilio Sovero HRL Laboratories United StatesJames Speck University of California at Santa Barbara United StatesMichael Spencer Cornell University United StatesAlessandro Spinelli Politecnico di Milano ItalyPuneet Srivastava Massachusetts Institute of Technology United StatesPhilipp Steinmann GlobalFoundries United StatesFranco Stellari IBM T.J. Watson Research Center United StatesJörgen Stenarson Chalmers tekniska hogskola SwedenSoeren Steudel IMEC BelgiumSteve Stoffels IMEC BelgiumHung-Der Su Richtek TaiwanPin Su National Chiao Tung University TaiwanPo-Cheng Su National Chiao Tung University TaiwanJun Suda Kyoto University JapanTetsuya Suemitsu Tohoku University JapanChang Suh Texas Instruments Inc United StatesYang Sui Purdue University United StatesSamia Suliman Pennsylvania State University United StatesHaifeng Sun Infineon Technologies AG GermanyJirong Sun Institute of Physics ChinaMin Sun Massachusetts Institute of Technology United StatesQian Sun Suzhou Institute of Nano-Tech and Nano-Bionics ChinaWeifeng Sun Southeast University ChinaXiao Sun IBM United StatesYanning Sun IBM T.J. Watson Research Center United StatesZhimei Sun Beihang University ChinaSiddarth Sundaresan GeneSiC Semiconductor United StatesJordi Sune Universidad Autonoma de Barcelona SpainMan Young Sung Korea University KoreaWoongje Sung State University of New York Polytechnic Institute United StatesAkil Sutton IBM Corporation United StatesSafumi Suzuki Tokyo Institute of Technology JapanTeruo Suzuki Socionext Inc. JapanBrian Swenson Transphorm, Inc. United StatesRoozbeh Tabrizian Georgia Institute of Technology United StatesMunehiro Tada NEC Corporation JapanMarko Tadjer Naval Research Laboratory United StatesYa-Hsiang Tai National Chiao Tung University TaiwanTsunaki Takahashi Keio University JapanShinya Takashima Fuji Electric Co. Ltd. JapanYasunori Takeda Yamagata University JapanMitsuru Takenaka University of Tokyo JapanHideki Takeuchi MEARS Technologies United StatesKiyoshi Takeuchi University of Tokyo JapanChuan Seng Tan Nanyang Technological University SingaporeHark Hoe Tan Australian National University AustraliaKechao Tang Stanford University United StatesTien-Hao Tang UMC TaiwanWing Man Tang Hong Kong Polytechnic University Hong KongZhikai Tang Efficient Power Conversion Corporation United StatesYuan Taur University of California at San Diego United StatesJames Teherani Columbia University United StatesAkinobu Teramoto Tohoku University JapanNobukazu Teranishi Shizuoka Univerisity JapanTomohide Terashima Mitsubishi Electric Corporation JapanTsutomu Tezuka Toshiba R&D Center Japan

IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 12, DECEMBER 2017 1649

First Name Last Name Affiliation Country

Hiren Thacker Oracle Corporation United StatesParagkumar Thadesar Qualcomm United StatesArun Thathachary Intel Corporation United StatesAaron Thean National University of Singapore SingaporeHan Wui Then Intel Corporation United StatesVasanthan Thirunavukkarasu National Tsing Hua University TaiwanTrevor Thornton Arizona State University United StatesManfred Thumm Karlsruhe Institute of Technology GermanyVinayak Tilak GE Global Research United StatesChang Ting-Chang National Sun Yat-Sen University TaiwanJulio Tinoco Universidad Veracruzana MexicoIlya Titkov Aston University United KingdomEng-Huat Toh GlobalFoundries SingaporeHirokuni Tokuda University of Fukui JapanMaria Toledano-Luque Samsung Electronics Hwaseong Site KoreaKatsuhiro Tomioka Hokkaido University JapanMoshe Tordjman Technion - Israel Institute of Technology IsraelAkira Toriumi University of Tokyo JapanReydezel Torres-Torres INAOE MexicoFabrizio Torricelli Eindhoven University of Technology NetherlandsEwan Towie Synopsys Inc United KingdomBoubacar Traore CEA LETI FranceRenan Trevisoli Centro Universitario da FEI BrazilVishal Trivedi Freescale Semiconductor Inc. United StatesHuynh-Bao Trong IMEC BelgiumTsung-Ming Tsai National Sun Yat-Sen University TaiwanLoucas Tsakalakos GE Global Research United StatesAndreas Tsormpatzoglou Aristotle University of Thessaloniki GreeceChuan-Wei Tsou National Tsing Hua University TaiwanDimitris Tsoukalas Institute of Microelectronics GreeceBing-Yue Tsui National Chiao Tung University TaiwanKazuhito Tsukagoshi National Institute for Materials Science JapanStanislav Tyaginov Technische Universität Wien AustriaYasuhiro Uemoto Panasonic Corporation JapanKatsunori Ueno Advanced Power Device Research Association JapanYukiharu Uraoka Nara Institute of Science and Technology JapanMichael Uren University of Bristol United KingdomMuhammad Usman KTH-Royal Institute of Technology SwedenRamesh Vaddi DSPM International Institute of Information

Technology IndiaAbhitosh Vais IMEC BelgiumPouya Valizadeh Concordia University CanadaIlia Valov Forschungszentrum Jülich GmbH GermanyEdward Van Brunt CREE, Inc. United StatesMark Van Dal TSMC Europe BV BelgiumGeert Van den bosch IMEC BelgiumMarleen Van Hove IMEC BelgiumDavid Van Treeck Paul-Drude-Institut fur Festkorperelektronik GermanyBart Van Zeghbroeck University of Colorado United StatesLaks Vanamurthy GlobalFoundries United StatesLode Vandamme Eindhoven University of Technology NetherlandsWilliam Vandenberghe University of Texas at Dallas United StatesJan Vanfleteren Ghent University - IMEC BelgiumGiorgio Vannini University of Ferrara ItalyAlon Vardi Massachusetts Institute of Technology United StatesTim Vasen TSMC Europe BV SwedenVladislav Vashchenko Maxim Integrated Products Inc United States

1650 IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 12, DECEMBER 2017

First Name Last Name Affiliation Country

Sam Vaziri Stanford University United StatesDmitry Veksler NIST United StatesAlin Velea Institutul National de Cercetare RomaniaVictor Veliadis Northrop Grumman Electronic Systems United StatesGeorgios Vellianitis TSMC BelgiumBertrand Vergne ISL FranceAnne Verhulst IMEC BelgiumAmit Verma Indian Institute of Technology Kanpur IndiaDevin Verreck IMEC BelgiumGiovanni Verzellesi Università di Modena e Reggio Emilia ItalyLars Vestling Uppsala University SwedenElisa Vianello CEA–LETI MINATEC FranceFederica Villa Politecnico di Milano ItalyAdrien Vincent Université Paris-Sud FranceJames Vinson Intersil Corp. United StatesSigurd Wagner Princeton University United StatesNiamh Waldron IMEC BelgiumJeffrey Walling University of Utah United StatesPatrick Waltereit Fraunhofer-IAF GermanyQing Wan Nanjing University ChinaGang Wang Sun Yat-Sen University ChinaHan Wang University of Southern California United StatesHao Wang Wuhan University ChinaJiabin Wang Tsinghua University ChinaJoddy Wang Synopsys Inc United StatesKai Wang Sun Yat-sen University-Carnegie Mellon University

Joint Institute of Engineering ChinaLingquan(Dennis)

Wang Broadcom Ltd Irvine United States

Miaomiao Wang IBM Research United StatesMin-Chuan Wang Atomic Energy Council TaiwanMingxiang Wang Soochow University ChinaRonghua Wang Transphorm, Inc. United StatesShui Jinn Wang National Cheng Kung University TaiwanSui-Dong Wang Soochow University ChinaTahui Wang National Chiao Tung University TaiwanWeike Wang IBM United StatesXin Peng Wang IMEC BelgiumXinran Wang Nanjing University ChinaXudong Wang University of Wisconsin-Madison United StatesYi Wang Max-Planck-Institut fur Festkorperforschung GermanyYu-Lin Wang National Tsing Hua University TaiwanZhongQiang Wang Northeast Normal University ChinaZhongrui Wang University of Massachusetts United StatesShireen Warnock Massachusetts Institute of Technology United StatesIssei Watanabe National Institute of Information and

Communications Technology JapanJosef Watts GlobalFoundries United StatesWalter Weber NaMlab gGmbH GermanyJin Wei Hong Kong University of Science and Technology Hong KongLan Wei University of Waterloo CanadaZhiqiang Wei Panasonic Semiconductor Solutions Co., Ltd. JapanRobert Weikle II University of Virginia United StatesDana Weinstein Purdue University United StatesClaude Weisbuch University of California at Santa Barbara United StatesThilo Werner CEA, LETI FranceLars-Erik Wernersson Lund University Sweden

IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 12, DECEMBER 2017 1651

First Name Last Name Affiliation Country

Sebastian Wicklein SanDisk United StatesDarshana Wickramaratne University of California at Santa Barbara United StatesSteven Wienecke University of California at Santa Barbara United StatesRob Wolters University of Twente NetherlandsHiu-Yung Wong Synopsys Inc United StatesMan Wong Hong Kong University of Science and Technology Hong KongMan Hoi Wong National Institute of Information and

Communications Technology JapanJiyong Woo Pohang University of Science and Technology KoreaEugene Worley Qualcomm United StatesDirk Wouters RWTH-Aachen University GermanyChao-Hsin Wu National Taiwan University TaiwanChien-Hung Wu Chung Hua University TaiwanChung-Chih Wu National Taiwan University TaiwanHeng Wu IBM Research United StatesJau-Yang Wu National Chiao Tung University TaiwanJiading Wu Wuhan National Laboratory of Optoelectronics ChinaJianzhi Wu University of California at San Diego United StatesJoyce Wu Pixtronix United StatesMeng-Chyi Wu National Tsing Hua University TaiwanWei-Jing Wu Institute of Polymer Optoelectronic Materials

and Devices ChinaYung-Chun Wu National Tsing Hua University TaiwanYung-Hsien Wu National Tsing Hua University TaiwanZhengyun Wu Xiamen University ChinaJoachim Wuerfl Ferdinand-Braun-Institut GermanyDong Wuu Da-Yeh University TaiwanGang Xie Zhejiang University ChinaHay Yang Xu Northeastern Normal University United StatesJianbin Xu Chinese University of Hong Kong Hong KongJiangtao Xu Tianjin University ChinaMing Xu Xi’an University of Technology ChinaYong Xu Wayne State University United StatesDmitry Yakimets Katholieke Universiteit Leuven BelgiumEugene Yakimov Institute of Microelectronics Technology RussiaTadashi Yamaguchi Renesas Electronics JapanTakeshi Yanagida Kyushu University JapanJianhua (Joshua) Yang University of Massachusetts United StatesJunggil Yang Samsung Electronics Co. Ltd KoreaKyounghoon Yang KAIST KoreaShu Yang Zhejiang University ChinaWeiyou Yang Ningbo University of Technology ChinaWentao Yang Hong Kong University of Science and Technology Hong KongXiang Yang SanDisk United StatesYang Yang University of Technology Sydney AustraliaHiroshi Yano University of Tsukuba JapanRyutaro Yasuhara Panasonic Corporation JapanJiandong Ye Nanjing University ChinaPeide Ye Purdue University United StatesTeng-hao Yeh Macronix International Co. Ltd TaiwanYee-Chia Yeo National University of Singapore SingaporeJung Ho Yoon University of Massachusetts Amherst United StatesJun-Sik Yoon Pohang University of Science and Technology KoreaYoungki Yoon University of Waterloo CanadaBong-Hyun You Samsung Display Co Ltd KoreaDarrin Young University of Utah United StatesHao Yu IMEC Belgium

1652 IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 12, DECEMBER 2017

First Name Last Name Affiliation Country

Hyun-Yong Yu Korea University KoreaShimeng Yu Arizona State University United StatesYongqiang Yu Hefei University of Technology ChinaZhiping Yu Tsinghua University ChinaJiann-shiun Yuan University of Central Florida United StatesChan-Su Yun Synopsys Inc United StatesCristian Zambelli University of Ferrara ItalyJun Zeng MaxPower Semiconductor Inc United StatesCarl-Mikael Zetterling KTH Royal Institute of Technology SwedenBo Zhang University of Electronic Science and

Technology of China ChinaChen Zhang IBM Research United StatesDongzhi Zhang China University of Petroleum ChinaHaifeng Zhang Arizona State University United StatesJian Zhang Liverpool John Moores University United KingdomJiawei Zhang University of Manchester United KingdomJon Zhang CREE, Inc. United StatesJunhao Zhang University of Cambridge United KingdomLeqi Zhang IMEC BelgiumLiangliang Zhang Stanford University United StatesNuo Zhang Analog Devices Inc United StatesQingchun Zhang CREE, Inc. United StatesShengdong Zhang Peking University ChinaWei Zhang Liverpool John Moores University United KingdomXiaozhong Zhang Tsinghua University ChinaXing Zhang Institute of Microelectronics ChinaXuchen Zhang Georgia Institute of Technology United StatesYong Zhang University of Toronto CanadaYuhao Zhang Massachusetts Institute of Technology United StatesZhen Zhang Uppsala University SwedenFeng Zhao Washington State University United StatesHongbin Zhao General Research Institute for Nonferrous Metals ChinaLarry Zhao Lam Research United StatesLiang Zhao InnoScience Inc United StatesRong Zhao Singapore University of Technology and Design SingaporeXin Zhao Massachusetts Institute of Technology United StatesZhi-Wei Zheng Xiamen University ChinaChang-Jian Zhou Hong Kong University of Science and Technology Hong KongGuangle Zhou SanDisk United StatesHai Zhou Hubei University ChinaHang Zhou Peking University ChinaJiantao Zhou University of Michigan United StatesXianda Zhou HKG Technologies Limited ChinaYuanzhong Zhou Analog Devices Inc United StatesChunxiang Zhu National University of Singapore SingaporeMingda Zhu Cornell University United StatesWenjuan Zhu University of Illinois United StatesXi Zhu Macquarie University AustraliaThomas Zimmer Université de Bordeaux FranceHorst Zimmermann Technische Universität Wien AustriaXinbo Zou Hong Kong University of Science and Technology Hong Kong