100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor...1 VD / RF OUT 2 VG / RF IN Flange Source...

TGF2929-FL 100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor

Datasheet: Rev A - 12-11-14 - 1 of 21 - Disclaimer: Subject to change without notice

© 2014 TriQuint www.triquint.com

Applications

• Military radar

• Civilian radar

• Professional and military radio communications

• Test instrumentation

• Wideband or narrowband amplifiers

• Jammers

Ordering Information Part ECCN Description

TGF2929-FL EAR99 Packaged part Flangeless

TGF2929-FL-EVB1 EAR99 3.1-3.5 GHz Evaluation Board

Functional Block Diagram

Pin Configuration Pin No. Label 1 VD / RF OUT

2 VG / RF IN

Flange Source

General Description The TriQuint TGF2929-FL is a 107 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint’s proven TQGaN25HVprocess, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Product Features

• Frequency: DC to 3.5 GHz

• Output Power (P3dB): 107 W at 3.5 GHz

• Linear Gain: > 14 dB at 3.5 GHz

• Typical PAE: > 50% at 3.5 GHz

• Operating Voltage: 28 V

• Low thermal resistance package




RF Characterization – Load Pull Performance at 1 GHz (1)

Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 260 mA

Symbol Parameter Min Typical Max Units GLIN Linear Gain (Power Tuned) 21.2 dB

P3dB Output Power at 3 dB Gain Compression (Power Tuned) 100 W

PAE3dB Power-Added Efficiency at 3 dB Gain Compression (Eff. Tuned)

75.7 %

G3dB Gain at 3 dB Compression (Power Tuned) 18.2 dB

Notes: 1. Pulse: 100µs, 20%

RF Characterization – Load Pull Performance at 2 GHz (1)





64.4 %



Absolute Maximum Ratings Parameter Value Breakdown Voltage (BVDG) 145 V min.

Gate Voltage Range (VG) -10 to 0 V

Drain Current (ID) 12 A

Gate Current (IG) -28.8 to 33.6 mA

Power Dissipation (PD) 144 W

RF Input Power, CW, T = 25°C (PIN)

39.8 dBm

Channel Temperature (TCH) 275 °C

Mounting Temperature (30 Seconds)

320 °C

Storage Temperature -40 to 150 °C

Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied.

Recommended Operating Conditions

Parameter Value Drain Voltage (VD) 28 V (Typ.)

Drain Quiescent Current (IDQ) 260 mA (Typ.)

Peak Drain Current, Pulse ( ID) 7.23 A (Typ.)

Gate Voltage (VG) -2.9 V (Typ.)

Channel Temperature (TCH) 250 °C (Max.)

Power Dissipation, CW (PD) 82 W (Max)

Power Dissipation, Pulse (PD) 140 W (Max)

Electrical specifications are measured at specified test conditions.

Specifications are not guaranteed over all recommended operating conditions.

Pulse signal: 100uS Pulse Width, 20% Duty Cycle




RF Characterization – Load Pull Performance at 3.0 GHz (1)





65.5 %



RF Characterization – Load Pull Performance at 3.5 GHz (1)





58.4 %






RF Characterization – Performance at 3.3GHz (1, 2)


Symbol Parameter Min Typical Max Units

GLIN Linear Gain 15.0 dB

P3dB Output Power at 3 dB Gain Compression 106 W

PAE3dB Power-Added Efficiency at 3 dB Gain Compression 51.3 %

G3dB Gain at 3 dB Compression 12.0 dB

Notes: 1. Pulse: 100µs PW, 20% 2. Performance at 3.3GHz in the 3.1 to 3.5GHz Evaluation Board

RF Characterization – Mismatched Ruggedness at 3.50 GHz (1, 2) Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 260 mA

Symbol Parameter Typical VSWR Impedance Mismatch Ruggedness 10:1

Notes: 1. Input power established at P3dB at matched load at the output of 3.1 – 3.5 GHz Evaluation Board 2. Pulse: 100uS PW, 20%




Thermal and Reliability Information - Pulsed Parameter Test Conditions Value Units Thermal Resistance(1) (θJC)

100uS, 5%, Pdiss = 100W

0.75 °C/W


Median Lifetime (TM) 1.92E09 Hours

Thermal Resistance(1) (θJC)

100uS, 10%, Pdiss = 100W

0.79 °C/W

Channel Temperature (TCH) 164.3 °C



300uS, 20%, Pdiss = 100W

0.88 °C/W




300uS, 50%, Pdiss = 100W

1.15 °C/W



Notes: 1. Thermal resistance measured to bottom of package.

Thermal and Reliability Information - CW 1 Parameter Test Conditions Value Units Thermal Resistance (θJC)

85 °C Case 28.8 W Pdiss

0.87 ºC/W


Median Lifetime (TM) 6.38E11 Hrs

Thermal Resistance (θJC) 85 °C Case 57.6 W Pdiss

1.49 ºC/W




1.62 ºC/W




1.74 ºC/W



Notes: 1. Thermal resistance measured to bottom of package.




Median Lifetime

1.00E+05

1.00E+06

1.00E+07

1.00E+08

1.00E+09

1.00E+10

1.00E+11

1.00E+12

1.00E+13

1.00E+14

1.00E+15

1.00E+16

1.00E+17

1.00E+18

1.00E+19

25 50 75 100 125 150 175 200 225 250 275

Me

dia

n L

ife

tim

e,

TM

(Ho

urs

)

Channel Temperature, TCH (°C)

Median Lifetime vs. Channel Temperature




Maximum Channel Temperature - Pulsed

120.0

140.0

160.0

180.0

200.0

220.0

240.0

260.0

1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00

Ma

xim

um

Ch

an

ne

l Te

mp

era

ture

(oC

)

Pulse Width (sec)

Maximum Channel Temperature

Package base fixed at 85 oC, Pdiss = 100 W

5% Duty Cycle

10% Duty Cycle

20% Duty Cycle

50% Duty Cycle




Load Pull Smith Charts (1, 2) RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency at reference planes indicated on page 18. Notes: 1. Test Conditions: VDS = 28 V, IDQ = 260 mA 2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20% 3. NaN indicates the harmonic impedances are uncontrolled.

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1 1.2

1.4

1.6

1.8

2

0.3

0.4

0.5

0.6

1GHz, Load-pull

49.9

49.7

49.5

20.419.919.4

75.5

73.571.5

•••• Max Power is 50dBm

at Z = 2.241+0.492iΩΩΩΩ

ΓΓΓΓ = -0.6764+0.0592i

•••• Max Gain is 20.4dB

at Z = 1.648+2.661iΩΩΩΩ

ΓΓΓΓ = -0.6861+0.3361i

•••• Max PAE is 75.7%

at Z = 2.391+3.013iΩΩΩΩ

ΓΓΓΓ = -0.588+0.3395i

Zo = 11.7ΩΩΩΩ

Zs(fo) = 1.45-0.27iΩΩΩΩ

Zs(2fo) = 6.54+24.95iΩΩΩΩZs(3fo) = 3.67-16.91iΩΩΩΩZl(2fo) = NaNΩΩΩΩ

Zl(3fo) = NaNΩΩΩΩ

Power

Gain

PAE





0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1 1.2

1.4

-0.4

-0.3

2GHz, Load-pull

5150.8

50.6

14.9

14.4

13.9 63.9

61.9

59.9

•••• Max Power is 51.2dBm

at Z = 2.555-1.967iΩΩΩΩ

ΓΓΓΓ = -0.6108-0.2223i


at Z = 3.421+0.937iΩΩΩΩ

ΓΓΓΓ = -0.5416+0.0955i

•••• Max PAE is 64.4%

at Z = 1.679-0.781iΩΩΩΩ

ΓΓΓΓ = -0.7431-0.1018i


Zs(fo) = 1.33-4.22iΩΩΩΩ

Zs(2fo) = 1.06+1.79iΩΩΩΩZs(3fo) = 2.31+1.72iΩΩΩΩZl(2fo) = NaNΩΩΩΩ


Power

Gain

PAE





0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1 1.2

-0.4

-0.3

3GHz, Load-pull

50.7

50.5

50.3

14.2

13.7

13.2

64.4

62.460.4


at Z = 2.794-4.043iΩΩΩΩ

ΓΓΓΓ = -0.4979-0.4178i


at Z = 1.705-1.63iΩΩΩΩ

ΓΓΓΓ = -0.7202-0.2092i

•••• Max PAE is 65.5%

at Z = 1.752-2.538iΩΩΩΩ

ΓΓΓΓ = -0.6797-0.317i


Zs(fo) = 5.16-8.3iΩΩΩΩ

Zs(2fo) = 3.73-4.83iΩΩΩΩ

Zs(3fo) = 37.97-7.46iΩΩΩΩZl(2fo) = NaNΩΩΩΩ


Power

Gain

PAE





0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

-0.5

-0.4

-0.3

3.5GHz, Load-pull

50.3

50.1

49.9

13.913.4

12.9

57.5

55.5

53.5


at Z = 2.992-5.16iΩΩΩΩ

ΓΓΓΓ = -0.4178-0.4979i

•••• Max Gain is 14dB

at Z = 1.839-3.661iΩΩΩΩ

ΓΓΓΓ = -0.6106-0.4355i

•••• Max PAE is 58.4%

at Z = 1.839-3.661iΩΩΩΩ

ΓΓΓΓ = -0.6106-0.4355i


Zs(fo) = 13-0.58iΩΩΩΩ

Zs(2fo) = 7.62+3.24iΩΩΩΩ

Zs(3fo) = 41.24+12.78iΩΩΩΩZl(2fo) = NaNΩΩΩΩ


Power

Gain

PAE




Typical Load-pull Performance – Power Tuned(1, 2)

1. Vds = 28V, Idq = 260mA, Pulse Width = 100uS, Duty Cycle = 20%, 25°C

2. Performance measured at device’s reference planes. See page 18.

15

20

25

30

35

40

45

50

55

60

65

10.0

11.0

12.0

13.0

14.0

15.0

16.0

17.0

18.0

19.0

20.0

39 40 41 42 43 44 45 46 47 48 49 50 51 52

PA

E [

%]

Ga

in [

dB

]

Pout [dBm]

TGF2929-FL Gain and PAE vs. Pout

Zs0 = 1.33-j4.22ΩZl0 = 2.56-j1.97Ω

2GHz; Vds = 28V; Idq = 260mA; Pulse: 100us, 20%; Power Tuned

10

15

20

25

30

35

40

45

50

55

60

10.0

11.0

12.0

13.0

14.0

15.0

16.0

17.0

18.0

19.0

20.0

40 41 42 43 44 45 46 47 48 49 50 51

PA

E [

%]

Gain

[d

B]

Pout [dBm]


Zs0 = 5.16-j8.30ΩZl0 = 2.79-j4.04Ω


10

15

20

25

30

35

40

45

50

55

60

10.0

11.0

12.0

13.0

14.0

15.0

16.0

17.0

18.0

19.0

20.0

38 39 40 41 42 43 44 45 46 47 48 49 50 51P

AE

[%

]

Ga

in [

dB

]

Pout [dBm]


Zs0 = 13.0-j0.58ΩZl0 = 2.99-j5.16Ω

3.5GHz; Vds = 28V; Idq = 260mA; Pulse: 100us, 20%; Power Tuned

15

20

25

30

35

40

45

50

55

60

65

15.0

16.0

17.0

18.0

19.0

20.0

21.0

22.0

23.0

24.0

25.0

44 45 46 47 48 49 50 51

PA

E [

%]

Ga

in [

dB

]

Pout [dBm]


Zs0 = 1.45-j0.27ΩΩΩΩZl0 = 2.24+j0.49Ω





Typical Load-pull Performance – Efficiency Tuned(1, 2)

1. Vds = 28V, Idq = 260mA, Pulse Width = 100uS, Duty Cycle = 20%, 25°C

2. Performance measured at device’s reference planes. See page 18.

20

25

30

35

40

45

50

55

60

65

70

10.0

11.0

12.0

13.0

14.0

15.0

16.0

17.0

18.0

19.0

20.0

40 41 42 43 44 45 46 47 48 49 50 51

PA

E [

%]

Ga

in [

dB

]

Pout [dBm]


Zs0 = 1.33-j4.22Ω

Zl0 = 1.68-j0.78Ω

2GHz; Vds = 28V; Idq = 260mA; Pulse: 100us, 20%; Efficiency Tuned

25

30

35

40

45

50

55

60

65

70

75

10.0

11.0

12.0

13.0

14.0

15.0

16.0

17.0

18.0

19.0

20.0

41 42 43 44 45 46 47 48 49 50

PA

E [

%]

Ga

in [

dB

]

Pout [dBm]


Zs0 = 5.16-j8.30Ω

Zl0 = 1.75-j2.54Ω

3GHz; Vds = 28V; Idq = 260mA; Pulse: 100us, 20%; Efficiency Tuned

20

25

30

35

40

45

50

55

60

65

70

10.0

11.0

12.0

13.0

14.0

15.0

16.0

17.0

18.0

19.0

20.0

39 40 41 42 43 44 45 46 47 48 49

PA

E [

%]

Ga

in [

dB

]

Pout [dBm]


Zs0 = 13.0-j0.58Ω

Zl0 = 1.84-j3.66Ω

3.5GHz; Vds = 28V; Idq = 260mA; Pulse: 100us, 20%; Efficiency Tuned




Performance Over Temperature (1, 2)

Performance measured in TriQuint’s 3.1 GHz to 3.5 GHz Evaluation Board at 3 dB compression.

Notes:

1. Test Conditions: VDS = 28 V, IDQ = 260 mA

2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20%

50.0

60.0

70.0

80.0

90.0

100.0

110.0

120.0

130.0

140.0

150.0

3.1 3.2 3.3 3.4 3.5

P3

dB

[W

]

Frequency [GHz]

P3dB vs. Frequency vs. Temperature

-40°C

-20°C

0°C

25°C

45°C

65°C

85°C

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

3.1 3.2 3.3 3.4 3.5G

3d

B [

dB

]

Frequency [GHz]

G3dB vs. Frequency vs. Temperature

-40°C

-20°C

0°C

25°C

45°C

65°C

85°C

0

10

20

30

40

50

60

70

80

90

100

3.1 3.2 3.3 3.4 3.5

PA

E3

dB

[%

]

Frequency [GHz]

PAE3dB vs. Frequency vs. Temperature

-40°C

-20°C

0°C

25°C

45°C

65°C

85°C




Evaluation Board Performance at 25°C (1, 2)

Performance measured in TriQuint’s 3.1 GHz to 3.5 GHz Evaluation Board at 3 dB compression.

Notes:

1. Test Conditions: VDS = 28 V, IDQ = 260 mA 2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20 %

5.0

6.5

8.0

9.5

11.0

12.5

14.0

15.5

17.0

18.5

20.0

50

60

70

80

90

100

110

120

130

140

150

3.1 3.2 3.3 3.4 3.5

G3

dB

[d

B]

P3

dB

[W

]

Frequency [GHz]

P3dB and G3dB vs. Frequency @ 25°C

P3dB

G3dB

0

10

20

30

40

50

60

70

80

90

100

3.1 3.2 3.3 3.4 3.5

PA

E [

%]

Frequency [GHz]

PAE vs. Frequency at 25°C




Application Circuit

Bias-up Procedure Bias-down Procedure

1. VG set to -5 V. 2. VD set to 28 V. 3. Adjust VG more positive until quiescent ID is 260

mA. 4. Apply RF signal.

1. Turn off RF signal. 2. Turn off VD and wait 1 second to allow drain

capacitor dissipation. 3. Turn off VG.

1

2

3

FET

CAPID=C1

RESID=R1

CAPID=C2

CAPID=C3

INDID=L1

RESID=R2

CAPID=C4

INDID=L2

CAPID=C5

CAPID=C6

CAPID=C7

CAPID=C8

DC_VID=Vg

DC_VID=Vd

PORTP=1Z=50 Ohm PORT

P=2Z=50 Ohm




Evaluation Board Layout Top RF layer is 0.020” thick Rogers RO4350B, ɛr = 3.48. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances.

Bill of Materials Reference Design Value Qty Manufacturer Part Number

R1 100 Ω 1 Vishay/Dale CRCW0603100RJNEA

C1, C2 5.6 pF 2 ATC 600S5R6BT

C3 1.0 pF 1 ATC 600S1R0BT

L1 22 nH 1 Coilcraft 0805CS-220X-LB

R2 10 Ω 1 Vishay/Dale CRCW060310R0JNEA

C4 10 uF 1 Murata C1632X5R0J106M130AC

L2 12 nH 1 Coilcraft A04T_L

C5 2400 pF 1 Murata C08BL242X-5UN-X0T

C6 1000 pF 1 ATC 800B102JT50XT

C7 220 uF 1 United Chemi-Con EMVY500ADA221MJA0G

C8 15 pF 1 ATC 600S150JT250XT




Pin Layout

Note: The TGF2929-FL will be marked with the “TGF2929-FL” designator and a lot code marked below the part designator. The “YY” represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly lot start, the “MXXX” is the production lot number, and the “ZZZ” is an auto-generated serial number.

Pin Description Pin Symbol Description

1 VD / RF OUT Drain voltage / RF Output

2 VG / RF IN Gate voltage / RF

3 Flange Source connected to ground

Reference Planes




Mechanical Information All dimensions are in inches.

Note:

Unless otherwise noted, all tolerances are +/-0.005 inches. This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free and tin-lead soldering processes.




Product Compliance Information ESD Sensitivity Ratings

Caution! ESD-Sensitive Device

ESD Rating: Class 1B Value: ≥ 500 V and < 1000V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114

Solderability Compatible with the latest version of J-STD-020, Lead free solder, 260° C

RoHs Compliance This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes:

• Lead Free

• Halogen Free (Chlorine, Bromine)

• Antimony Free

• TBBP-A (C15H12Br402) Free

• PFOS Free

• SVHC Free

MSL Rating

The part is rated Moisture Sensitivity Level 3 at 260°C per JEDEC standard IPC/JEDEC J-STD-020.

ECCN

US Department of Commerce EAR99

Recommended Soldering Temperature Profile




Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Tel: +1.972.994.8465 Email: [email protected] Fax: +1.972.994.8504 For technical questions and application information: Email: [email protected]

Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.

100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor...1 VD / RF OUT 2 VG / RF IN Flange Source...

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Transcript of 100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor...1 VD / RF OUT 2 VG / RF IN Flange Source...