e GaN electronics: what can epitaxy enable - NMI · GaN electronics: what can epitaxy enable ......

IQE

in C

on

fid

ence

Enabling Advanced Technologies

GaN electronics: what can epitaxy enable nmi meeting

Integrating wide bandgap and high performance silicon semiconductors into systems

Cranfield University: 22nd Oct 2015

Trevor Martin FinstP, IQE Cardiff UK

IQE

in C

on

fid

ence

Enabling Advanced Technologies 2 NMI workshop WBG & High Perf Si : Oct 2015

Outline

• IQE

• What we do

• Drivers for GaN electronics

• Technical

• Commercial

• Capability

• Products

• Development activities

• Wider perspective

• Summary

IQE

in C

on

fid

ence


GaA

s b

ased

co

mp

on

ents

GSM PAs

Switch WCDMA

duplexers

WCDMA PAs

Silicon based components

IQE EPITAXY Chip Fabrication Component Assembly

Epitaxy is our business ... Engineering advanced materials

IQE

in C

on

fid

ence

Enabling Advanced Technologies GANEX summer school : June 2015

Pioneering compound semiconductor technology for over 25 years

Cardiff, UK

CVD

Milton Keynes, UK

VGF & LEC

Singapore

MBE

Cardiff, UK

MOCVD

Bath, UK

CVD: FS-GaN

Washington, USA

VGF & LEC

New Jersey, USA

MOCVD

Pennsylvania, USA

MBE & MOCVD

North Carolina, USA

MBE

Hsinchu, Taiwan

MOCVD

Massachusetts, USA

MOCVD

IQE Europe Group HQ

4

IQE

in C

on

fid

ence


Drivers for GaN electronics

IQE

in C

on

fid

ence


GaN power module ¼ size of GaAs equivalent

GaN for RF

SYSTEM BENEFITS Higher power density :

Smaller more compact systems Reduced weight

GaN Robustness

Higher operating temperature Robust to radiation damage

X –band telemetry transmitter launch may 2013 on Proba . > 24 months “in orbit” flight heritage

0.5dB manifold loss

4.5W 5

W

0 2 4 6 8 10 12 0 2 4 6 8 10 12

0

100

200

300

400

500

600

700

800

0 2 4 6 8 10 12

Id (

mA

/mm

) Vds (Volts)

(a) (b) (c)

25°C 500°C 300°C

• High bandgap High Temperature

• High breakdown field High Voltage

• High thermal conductivity High Power

IQE

in C

on

fid

ence


GaN microwave devices

7

• Civil

• Mobile comms base-stations

• CATV

• Air traffic control and maritime radars

• Medical

• Space

• TWT & GaAs transmitter replacement

• Earth Observation (SAR)

• Navigation

• Telecoms

• Robust LNAs

• VSAT (very small aperture terminals)

• Military

• Radar

• Naval, Airborne, phased array

• EW

• Satellite communications

IQE

in C

on

fid

ence


GaN for Power Control

• What differentiates GaN in Power control • Significant Size and weight benefits

• Higher frequency c.f. silicon enables smaller passives and filters

• Higher efficiency

• reduces cooling requirements

• Wider band gap allows

• higher temperature operation

8

IQE

in C

on

fid

ence


DC-DC

Server

/ looter

note

PC

Li+ batt

Comms

Power

supply HDD

HEV, EV

inverter

Switching PS

server / WS

AC adaptor

DC-DC

convertor

Automobile

EPS

ABS

Injector

Industrial

inverter

Aircon

Fridge

Traction

power

transmission

GaN Power Control – Market

9

IQE

in C

on

fid

ence


DC-DC

Server

/ looter

note

PC

Li+ batt

Comms

Power

supply HDD

HEV, EV

inverter

Switching PS

server / WS

AC adaptor

DC-DC

convertor

Automobile

EPS

ABS

Injector

Industrial

inverter

Aircon

Fridge

Traction

power

transmission

SiC

Silicon

GaN Power Control – Market

10

GaN

M Kanechika Toyota, IEDM 2010

IQE

in C

on

fid

ence


Capability

IQE

in C

on

fid

ence


Current capability

RF Power Control

SiC substrate 100 and 150mm

Silicon substrate

100 and 150mm

High Resistivity Float zone Silicon

100, 150 and 200mm

Conducting Czochralski Silicon

IQE

in C

on

fid

ence


Project activities

IQE

in C

on

fid

ence


RF GaN on Silicon Carbide (100mm dia)

SiC Substrate

GaN “buffer”

AlGaN barrier 2DEG / Channel

0 50 100 150 200 250 300 350 µm

µm

0

50

100

150

200

250

300

350

nm

0

2

4

6

8

10

12

14

16

18

20

22

24

26

28

X polarisor Transmission

SIMS : Fe

Surface Topography

X-ray

C-V

Curvature

(004) omega-2 theta Scan

GaN

AlGaN

SiC Sheet Resistivity

IQE

in C

on

fid

ence


GaN microwave supply chain Europe – Space and Defence

SiC Substrates

Epitaxy

Process foundries

End users

IQE

in C

on

fid

ence


GaN microwave supply chain Europe – Space and Defence

SiC Substrates

Epitaxy

Process foundries

End users

X - ITAR

X - ITAR

IQE

in C

on

fid

ence


PearGaN – Power Electronics for Applications and Reliability in GaN (Oct 2012 – March 2015)

• Motivation • The world is moving to an ever increasing demand for power conversion

• “All electric” - Diversification in energy generation and increased sensors and actuators in domestic and industrial applications

• Conversion efficiency using Si devices is reaching a limit • Si CoolMOS (Super Junction MOSFET)

• GaN can surpass this

• Lateral H-FET

• Small individual savings – but large impact because of volume • GaN has potential to increase conversion efficiency by 2% (96% - 98%)

• UK data centres use ~3GW 1 • 2% over a year is equivalent to consumption of ~100,000 households 2 (Borough of Swindon)

• Excellent compatibility with existing Si processes • Thin < 10micron GaN layer on a Silicon substrate

• “Looks like Silicon”

• 150 and 200mm wafer diameter • Compatible with Si foundries

17

1 DatacentreDynamics global census 2012 2 UK Dpt Energy & Climate Change 2014

BIS: “Power Electronics a strategy for success”: Oct 2011

IQE

in C

on

fid

ence


PearGaN – Power Electronics for Applications and Reliability in GaN (Oct 2012 – March 2015)

Q1

Q2

Q3

Q4

CDC

C1

C2

D1

D2

S2S1

L1

L2

CPV

Linv

Cf

Lg

GaN HFET GaN HFET

For the H-bridge GaN technology reduced the losses from 6.3W to 3.5W when compared to Si superjunction MOSFETs .

Reduced component count (BOM)

~ 40% volume reduction

IQE

in C

on

fid

ence


KTP: Dynamic characteristics

• Combine • Measurement

• Back-bias sweeps to replicate vertical fields

• Different buffer structures

• Modelling Silvaco-Atlas

• Better understand where charges are trapped & move

Current

Time

IQE

in C

on

fid

ence


Wider perspective

IQE

in C

on

fid

ence


GaN on Si for RF : 200mm process in a Silicon CMOS Foundry

200mm

GaN/Si

HEMT

Ref: LaRoche et al CS MANTECH 2014

IQE

in C

on

fid

ence


GaN on Si for RF

2014

IQE

in C

on

fid

ence


E-mode Power devices on 200mm Si

“D-mode “ – Normally on basis of initial development normally off in “cascode” configuration “E-mode” - Normally off

IQE

in C

on

fid

ence


Higher Frequency applications of GaN – DARPA “NEXT” / HRL

• The single chip MMIC peak output power level of 842 mW at 88 GHz (14 V bias) Micovic et al., IEEE Int. Microw. Symp. Dig., pp. 237-239, 2010.

20-nm-gate E-mode HEMTs with an increased Lsw of 70 nm demonstrated a simultaneous fT/fmax of 342/518 GHz with an off-state breakdown voltage of 14V.

Goal: 1000-transistor, high-yield, 500 GHz E/D-mode GaN technology for mixed signal applications

IQE

in C

on

fid

ence


Final Thought

IQE

in C

on

fid

ence


GaN/Si Can Leverage Tremendous Scale

Question: How many 200mm equivalent silicon wafers were consumed worldwide in CY2013?

Answer: More than 180,000,000

Reference: a.) SEMI Manufacturers Group

(a)

IQE

in C

on

fid

ence


GaN/Si Can Leverage Tremendous Scale

Question: How many 200mm equivalent silicon wafers were consumed worldwide in CY2013?

Answer: More than 180,000,000

Reference: a.) SEMI Manufacturers Group

37 weeks o/p generates enough wafers to cover 4 square km of Cranfield

(a)

IQE

in C

on

fid

ence


Summary

• GaN is very compatible with Si • RF applications • Power control applications

• 200mm dia wafers for volume applications • Depletion mode (normally on) • Enhancement mode (normally off) • High frequency – upto 400GHz • Mixed signal (A-D)

• Harsh environments (Niche) • GaN on SiC option

IQE

in C

on

fid

ence


Questions Thank you

IQE

in C

on

fid

ence


Developments IQE/cardiff uni

30

IQE

in C

on

fid

ence


Developments IQE/cardiff uni

Research Institute in Compound

Semi’

TRL 1-3

Compound Semi’

Foundation “CSF”

TRL 4-6

CS Epi Foundry Underpinning

EU supply chain ECSEL

(EFFORTLESS)

TRL6-8

e GaN electronics: what can epitaxy enable - NMI · GaN electronics: what can epitaxy enable ......

Documents

Transcript of e GaN electronics: what can epitaxy enable - NMI · GaN electronics: what can epitaxy enable ......