Transistor nMOS Q channel = CV C = C g = ox WL/t ox = C ox WL V = V gc – V t = (V gs – V ds /2) – V t v = E (mobility) E = V ds /L Time for carrier.
VLSI Design CMOS Transistor Theory. EE 447 VLSI Design 3: CMOS Transistor Theory2 Outline Introduction MOS Capacitor nMOS I-V Characteristics pMOS I-V.
SJTU J. Chen 1 2015-8-16 Chapter 5 Field-Effect Transistors (FETs)