Os note
Feasible Mott FET: Concept, Obstacle, and Future
Towards novel Mott FET: Concept, Present Status, and Future
2010 Electronic Materials Conference Ashish Baraskar June 23-25, 2010 – Notre Dame, IN 1 In-situ Ohmic Contacts to p-InGaAs Ashish Baraskar, Vibhor Jain,
IWCE 10 Purdue University October 24-27 2004 Intrinsic Parameter Fluctuations in Conventional MOSFETs at the scaling Limit: A Statistical Study *F. Adamu-Lema,
Nanofluidic Microsystems for Advanced Biosample Preparation Ying-Chih Wang ([email protected]) 1, Jianping Fu, Yong-Ak Song and Jongyoon Han 2,3 1 Department.
letcure01_06_21_2010.pdf
Overview
