3D IC'S
Open, De Jure, De Facto and Proprietary: Standards and Microsoft
Présentation PowerPoint
Think3 Industrial Design
Finalyser - the Plug-In and ExtendScripts Collection for Adobe FrameMaker and more...
NASA World Wind Contribution to GEOSS Client Applications Session Nadine Alameh, Ph.D. MobiLaps LLC September 26th, 2008.
Work in progress – do not publish RF&A/MS 1-page update Analog - carrier Frequency bands LF Analog (0-0.4GHz)RF (0.4-30GHz)mm-wave (30-300GHz)THz (>300GHz)
ITRS Winter Conference 2007 Kamakura, Japan 1 International Technology Roadmap for Semiconductors Assembly and Packaging 2007.
Adrian Ionescu Nanolab, EPFL Switzerland 1. Prove that energy efficient nanolectronics is a must for the future… … and NEMS is a potential key enabling.
Formation of Sub-10 nm width InGaAs finFETs of 200 nm Height by Atomic Layer Epitaxy *D. Cohen-Elias 1, J.J.M. Law 1, H.W. Chiang 1, A. Sivananthan 1,
Simultaneous Power and Thermal Integrity Driven Via Stapling in 3D ICs Hao Yu, Joanna Ho and Lei He Electrical Engineering Dept. UCLA Partially supported.
