All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
1
COMPONENTS: TRANSISTOR
PART NUMBER: 2SA1037AKT146R
MANUFACTURER: ROHM
Device Modeling Report
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
2
TRANSISTOR MODEL
PSpice model parameter
Model description
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
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3
Ic
Vce
VAR
(X1,Y1)
(X2,Y2)
Y=aX+b
Reverse Early Voltage Characteristic
Reverse
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4
Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
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5
Ic
VceVAF
(X1,Y1)
(X2,Y2)
Y=aX+b
Forward Early Voltage Characteristic
Forward
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6
C-B Capacitance Characteristics E-B Capacitance Characteristics
Measurement
Simulation
Measurement
Simulation
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7
V1
-6V
0
I1
0Adc
Q1Q2SA1037AKT146R
IC(Q1)
-1.0mA-200uA -100mA
IC(Q1)/ IB(Q1)
10
100
1.0K
Transistor hFE-IC Characteristics
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
8
10
100
1000
1.0 10.0 100.0
DC
CU
RR
EN
T G
AIN
: h
FE
COLLECTOR CURRENT : Ic ( -mA )
Measurement
Simulation
Comparison Graph
Ic(mA) hFE
Error(%) Measurement Simulation
-0.200 288.000 287.083 -0.318
-0.500 294.000 293.905 -0.032
-1.000 295.000 295.117 0.040
-2.000 295.000 295.330 0.112
-5.000 294.000 293.563 -0.149
-10.000 290.000 289.581 -0.144
-20.000 283.000 281.114 -0.666
-50.000 257.000 254.769 -0.868
-100.000 210.000 207.905 -0.998
Circuit Simulation Result
Simulation Result
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9
VC
I1
0Adc
0
F1
F10
Q1Q2SA1037AKT146R
IC(Q1)
-1.0mA-200uA -100mA
V(Q1:c)
-100mV
-30mV
-1.0V
VCE(Sat)-IC Characteristics
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
10
0.01
0.1
1
0.1 1.0 10.0 100.0
CO
LL
EC
TO
R S
AT
UR
AT
ION
V
OL
TA
GE
: V
CE
(sat)
(-V
)
COLLECTOR CURRENT : Ic ( -mA )
Measurement
Simulation
Comparison Graph
IC(mA) VCE(sat)(V)
Error(%) Measurement Simulation
-0.200 -0.0710 -0.0697 -1.8310
-0.500 -0.0650 -0.0638 -1.8462
-1.000 -0.0620 -0.0612 -1.2903
-2.000 -0.0610 -0.0620 1.6393
-5.000 -0.0626 -0.0625 -0.1597
-10.000 -0.0680 -0.0687 1.0294
-20.000 -0.0825 -0.0824 -0.1212
-50.000 -0.1270 -0.1258 -0.9449
-100.000 -0.1990 -0.2001 0.5528
Circuit Simulation Result
Simulation Result
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11
VC
I1
0Adc
0
F1
F
10
Q1Q2SA1037AKT146R
IC(Q1)
-100uA -100mA
V(Q1:b)
-10mV
-10V
VBE(Sat)-IC Characteristics
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
12
0.01
0.1
1
10
0.1 1.0 10.0 100.0
BA
SE
-EM
ITT
ER
SA
TU
RA
TIO
N V
OL
TA
GE
: V
BE
(sat)
(-
V)
IC ( -mA )
Measurement
Simulation
Comparison Graph
IC(mA) VBE(sat)(V)
Error(%) Measurement Simulation
-0.100 -0.577 -0.581 0.693
-0.200 -0.596 -0.599 0.503
-0.500 -0.620 -0.624 0.645
-1.000 -0.639 -0.643 0.626
-2.000 -0.662 -0.663 0.151
-5.000 -0.698 -0.692 -0.860
-10.000 -0.725 -0.715 -1.379
-20.000 -0.765 -0.746 -2.484
-50.000 -0.820 -0.809 -1.341
-100.000 -0.875 -0.894 2.171
Circuit Simulation Result
Simulation Result
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13
V1
TD = 1u
TF = 10nsPW = 20usPER = 50us
V1 = -5.55
TR = 10ns
V2 = 5.05
R2
500
R3
380
RL
200
0
VCC
-30
D1
D1N5817D2
D1N5817
L2
50nH
1 2
L1
30nH
1 2 Q1Q2SA1037AKT146R
R1
50
Time
0s 0.5us 1.0us 1.5us 2.0us
1 V(R1:2) 2 V(Q1:C)
-8.0V
-6.0V
-4.0V
-2.0V
0V
2.0V
4.0V
6.0V
8.0V1
-40V
-20V
0V
20V
40V2
>>
Switching Characteristics Circuit simulation result
Evaluation circuit
Simulation result
Measurement Simulation %Error
tf (ns) 25.000 24.395 -2.420
tstg (ns) 210.000 210.919 0.438
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14
Switching Characteristics Reference
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15
0
+-
H1
H
0
I1
0Adc
1Aac+
-
G1
G
GAIN = 1e6
0IC
0 0
Vce
-12Vdc
0
F1
F 0
0
Ic
1m
Q2Q2SA1037AKT146R
Q1Q2SA1037AKT146R
V_Ic
-1.0m-500u -100m
ZeroCross(DB(IC(Q2)))
100M
1.0G
40M
Ft - IC Characteristics
-IC(mA) FT(MHz)
Error(%) Measurement Simulation
10.000 310.000 303.881 -1.974
Circuit Simulation Result
Evaluation Circuit
Simulation Result
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16
V1
-5Vdc
I1
0Adc
0
Q1Q2SA1037AKT146R
V_V1
0V -1.0V -2.0V -3.0V -4.0V -5.0V
IC(Q1)
0A
-20mA
-40mA
-60mA
-80mA
-100mA
Output Characteristics
Circuit Simulation Result
Evaluation Circuit
IB=-0
-50uA
-100uA
-150uA
-200uA
-250uA
-350uA
-400uA
-450uA -500uA
-300uA
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
17
Output Characteristics Reference
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