SPICE MODEL of TPCP8402 (Professional+BDP Model) in SPICE PARK
SPICE MODEL of 2SK3019 (Standard+BDS Model) in SPICE PARK
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Transcript of SPICE MODEL of 2SK3019 (Standard+BDS Model) in SPICE PARK
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: 2SK3019
MANUFACTURER: ROHM
REMARK: Body Diode (Model Parameters) /
ESD Protection Diode
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
2
U12SK3019
Circuit Configuration
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
3
MOSFET MODEL
PSpice model parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
4
Transconductance Characteristics
Circuit Simulation result
Comparison table
ID (A) gfs (S)
%Error Measurement Simulation
0.01 0.043 0.041 -3.53
0.02 0.059 0.058 -1.69
0.05 0.092 0.092 0.00
0.1 0.129 0.130 0.78
VDS=3V
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5
V_VGS
0V 1.0V 2.0V 3.0V 4.0V
-I(VDS)
1.0mA
10mA
100mA
VGS
0
VDS
3V
U12SK3019
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
6
Comparison Graph
Circuit Simulation result
Comparison table
ID (A) VGS (V)
%Error Measurement Simulation
0.01 1.690 1.645 -2.66
0.02 1.880 1.846 -1.81
0.05 2.240 2.246 0.27
0.1 2.640 2.693 2.01
VDS=3V
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7
VGS
4V
VDSU12SK3019
0
V_VDS
0V 20mV 40mV 50mV
-I(VDS)
0A
5mA
10mA
Rds(on) Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VGS=4(V), ID=10(mA)
Parameter Unit Measurement Simulation %Error
RDS(on) Ω 5.00 4.97 -0.60
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
8
V_VDS
0V 1.0V 2.0V 3.0V 4.0V 5.0V
-I(VDS)
0A
50mA
100mA
150mA
VGS
0
VDS
U12SK3019
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS=1.5V
2.0
2.5
3 4
3.5
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
9
Capacitance Characteristics
Simulation result
Comparison table
VDS (V) Cbd (pF)
%Error Measurement Simulation
1 6.00 6.03 0.50
2 5.80 5.77 -0.52
5 5.00 5.04 0.80
10 4.50 4.60 0.00
20 3.80 3.82 0.53
Simulation
Measurement
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10
Time*100u
0s 100ps 200ps 300ps 400ps 500ps 600ps 700ps
V(W1:3)
0V
1V
2V
3V
4V
5V
6V
7V
8V
9V
10V
0
D1
DMOD
-
+W1
ION = 0IOFF = 100uAW
IGTD = 0
TF = 1n
PW = 10mPER = 1
I1 = 0I2 = 100u
TR = 1n
ID
100mA
VDD
24V
U12SK3019
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=24(V), VGS=8(V), ID=100(mA)
Parameter Unit Measurement Simulation %Error
Qgs nc 0.125 0.125 0.00
Qgd nc 0.195 0.197 1.03
Qg nc 0.590 0.580 -1.69
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11
Time
1.84us 1.92us 2.00us 2.08us 2.16us 2.24us
V(G) V(D)
0V
1V
2V
3V
4V
5V
6V
7V
8V
9V
10V
G
U12SK3019
V1TD = 2u
TF = 20nPW = 5uPER = 100u
V1 = 0
TR = 20n
V2 = 5VDD
5
0
RL
500
L2
30nH
12D
L130nH
12R1
10
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=5(V), VGS=5(V), ID=10(mA), RG=10()
Parameter Unit Measurement Simulation %Error
ton ns 50.00 49.1 -1.80
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
12
V_VSD
0V 0.5V 1.0V 1.5V
-I(U1:D)
100uA
1.0mA
10mA
100mA
VSD
0
U12SK3019
Body Diode Forward Current Characteristics
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
13
Comparison Graph
Simulation result
Comparison table
IDR (A) VSD (V)
%Error Measurement Simulation
0.001 0.620 0.617 -0.48
0.002 0.640 0.639 -0.16
0.005 0.665 0.668 0.45
0.01 0.690 0.691 0.14
0.02 0.720 0.718 -0.28
0.05 0.770 0.765 -0.65
0.1 0.818 0.819 0.12
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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Time
9.96us 10.00us 10.04us 10.08us 10.12us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
U1
2SK3019
0
V1TD = 7ns
TF = 20nsPW = 10usPER = 1ms
V1 = -9.4V
TR = 10ns
V2 = 10.9V
R1
50
Reverse Recovery Characteristics
Circuit Simulation result
Evaluation circuit
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 14.0 13.8 -1.43
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Reverse Recovery Characteristics Reference
Trj = 14(ns)
Trb = 17(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Relation between trj and trb
Example
Measurement
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16
V_VGS
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
-I(VGS)
0A
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
1.0mA
VGS
0
R1
1G
U12SK3019
ESD PROTECTION DIODE
Zener Voltage Characteristics
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
17
Zener Voltage Characteristics Reference
IZ = 76(uA)
VZ = 23.25(V) at IZ
Measurement