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MRF374A
1RF Device DataFreescale Semiconductor
RF Power Field--Effect TransistorN--Channel Enhancement--Mode Lateral MOSFETDesigned for broadband commercial and industrial applications with
frequencies from 470 to 860 MHz. The high gain and broadband performance ofthis device make it ideal for large--signal, common source amplifier applicationsin 28/32 volt transmitter equipment.
• Typical Two--Tone Performance @ 860 MHz, 32 Volts, Narrowband FixtureOutput Power 130 Watts PEPPower Gain 17.3 dBEfficiency 41%IMD --32.5 dBc
• Capable of Handling 10:1 VSWR @ 32 Vdc, 857 MHz, 130 Watts CWOutput Power
Features• Integrated ESD Protection• Excellent Thermal Stability• Characterized with Differential Large--Signal Impedance Parameters• RoHS Compliant
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +70 Vdc
Gate--Source Voltage VGS --0.5, +15 Vdc
Total Device Dissipation @ TC = 25°CDerate above 25°C
PD 3021.72
WW/°C
Storage Temperature Range Tstg --65 to +150 °C
Case Operating Temperature TC 150 °C
Operating Junction Temperature TJ 200 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case RθJC 0.58 °C/W
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 1 (Minimum)
Machine Model M2 (Minimum)
Document Number: MRF374ARev. 5, 5/2006
Freescale SemiconductorTechnical Data
470--860 MHz, 130 W, 32 VLATERAL N--CHANNEL
BROADBANDRF POWER MOSFET
CASE 375F--04, STYLE 1NI--650
MRF374A
© Freescale Semiconductor, Inc., 2006, 2010. All rights reserved.
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2RF Device Data
Freescale Semiconductor
MRF374A
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics (1)
Drain--Source Breakdown Voltage(VGS = 0 Vdc, ID =10 μA)
V(BR)DSS 70 Vdc
Zero Gate Voltage Drain Current(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS 1 μAdc
Gate--Source Leakage Current(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS 1 μAdc
On Characteristics
Gate Threshold Voltage (1)
(VDS = 10 V, ID = 200 μA)VGS(th) 2 2.9 4 Vdc
Gate Quiescent Voltage (2)
(VDS = 32 V, ID = 100 mA)VGS(Q) 2.5 3.3 4.5 Vdc
Drain--Source On--Voltage (1)
(VGS = 10 V, ID = 3 A)VDS(on) 0.41 0.45 Vdc
Dynamic Characteristics (1)
Input Capacitance(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Ciss 97.3 pF
Output Capacitance(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Coss 49 pF
Reverse Transfer Capacitance(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Crss 1.91 pF
Functional Characteristics, Narrowband Operation (2) (In Freescale MRF374A Narrowband Circuit, 50 ohm system)
Common Source Power Gain(VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 400 mA,f1 = 857 MHz, f2 = 863 MHz)
Gps 16 17.3 dB
Drain Efficiency(VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 400 mA,f1 = 857 MHz, f2 = 863 MHz)
η 36 41.2 %
Intermodulation Distortion(VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 400 mA,f1 = 857 MHz, f2 = 863 MHz)
IMD --32.5 --28 dB
1. Each side of device measured separately.2. Measurement made with device in push--pull configuration.
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MRF374A
3RF Device DataFreescale Semiconductor
Figure 1. MRF374A Narrowband Test Circuit Component Layout
PCB Substrate (30 mil thick)
Motorola Vertical 860 MHz BalunRogers RO3010 (50 mil thick)
55 mil slot cutout to accept Balun
Input(50 ohm microstrip)
Output 2(12.5 ohm microstrip)
Ground
Vertical Balun Mounting Detail
Note:Trim Balun PCB so that a 35 mil tabfits into the main PCB slot resultingin Balun solder pads being level withthe PCB substrate solder pads whenfully inserted.
Output 1(12.5 ohm microstrip)
MRF374 Rev 3a
C1
C2 C3
R3A
R2
L4
L3A L2A
C4A
L3B
R3B
C4BC5 C6
C7A
R1A
R1B
L2B
C7B
C13A
C13B
C10
C9A
C9B
R4AL1A
C14A
R4BL1B
C14B
C11
C12A
C12B
RF INPUTRF OUTPUT
VGS
VGS
VDD
VDD
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the FreescaleSemiconductor signature/logo. PCBs may have either Motorola or Freescale markings during thetransition period. These changes will have no impact on form, fit or function of the current product.
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4RF Device Data
Freescale Semiconductor
MRF374A
Table 5. MRF374A Narrowband Test Circuit Component Layout Designations and Values
Designation Description
C1 0.8 pF Chip Capacitor, ATC
C2 2.2 pF Chip Capacitor, ATC
C3 0.5 -- 5.0 pF Variable Capacitor, Johanson Gigatrim
C4A, B, C12A, B 47 pF Chip Capacitors, ATC
C5 1.0 pF Chip Capacitor, ATC
C6 10 pF Chip Capacitor, ATC
C7A, B, C14A, B 100,000 pF Chip Capacitors, ATC
C9A, B 15 pF Chip Capacitors, ATC
C10 3.9 pF Chip Capacitor, ATC
C11 5.1 pF Chip Capacitor, ATC
C13A, B 2.2 mF, 100 V Chip Capacitors, Vishay #VJ3640Y225KXBAT
L1A, B 5.0 nH, Coilcraft #A02T
L2A, B 8.0 nH, Coilcraft #A03T
L3A, B 130.0 nH, Coilcraft #132--11SMJ
L4 8.8 nH, Coilcraft #1606--8
R1A, B 51 Ω, 1/4 W Chip Resistors, Vishay Dale (1210)
R2 10 Ω, 1/2 W Chip Resistor, Vishay Dale (2010)
R3A, B 3.3 kΩ, 1/8 W Chip Resistors, Vishay Dale (1206)
R4A, B 180 Ω, 1/4 W Chip Resistors, Vishay Dale (1210)
PCB MRF374 Printed Circuit Board Rev 03, Rogers RO4350,Height 30 mils, εr = 3.48
Balun B1A, B Vertical 860 MHz Narrowband Balun, Printed Circuit Board Rev 01,Rogers RO3010, Height 50 mils, εr = 10.2
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MRF374A
5RF Device DataFreescale Semiconductor
TYPICAL CHARACTERISTICS
90015
18
400
VDD = 32 Vdc
Pout = 100 W (PEP)IDQ = 750 mAnFrequency = 6 MHz
Gps,POWER
GAIN(dB)
17.5
17
16.5
16
15.5
800700600500
28 Vdc
Figure 2. Gain versus Frequencyin Broadband Circuit
Figure 3. Intermodulation Distortion versusFrequency in Broadband Circuit
Figure 4. Drain Efficiency versus Frequencyin Broadband Circuit
f, FREQUENCY (MHz) f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 5. Performance in Broadband Circuit
Figure 6. Capacitance versus Voltage Figure 7. COFDM Intermodulation, Gain and Efficiencyversus Output Power in Broadband Circuit
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
900--50
--15
400
INTERMODULATIONDISTORTION(dBc)
IMD,
VDD = 28 Vdc
32 Vdc
--20
--25
--30
--35
--40
--45
800700600500
90020
45
400
VDD = 28 Vdc
,DRAINEFFICIENCY(%)
η
32 Vdc
800700600500
40
35
30
25
9000
20
40020
40
IRL
Gps
η
INPUTRETURNLOSS
(dB)
IRL,
Gps,POWER
GAIN(dB)
,DRAINEFFICIENCY(%)
η
D
15 35
10 30
5 25
800700600500
D
f, FREQUENCY (MHz)
600
200
00
20
Crss
Coss
Capacitance(pF)
Coss
Ciss
150 15
100 10
50 5
5040302010
,Ciss,
Capacitance(pF)
Crss,
1000
40
0.1--60
--20
Gps
η
IMR
INTERMODULATION(dBc)
IMR,
35 --25
30 --30
25 --35
20 --40
15 --45
10 --50
5 --55
101
Pout, OUTPUT POWER (WATTS) AVG.
,DRAINEFFICIENCY(%),
ηGps,POWER
GAIN(dB)
Pout = 100 W (PEP)IDQ = 750 mAnFrequency = 6 MHz
Pout = 100 W (PEP)IDQ = 750 mAnFrequency = 6 MHz
VDD = 32 VdcPout = 100 W (PEP)IDQ = 750 mAnFrequency = 6 MHz
VDD = 32 VdcIDQ = 1.1 Af = 860 MHz2 K Mode COFDM64 QAM10.5 Peak/Avg. Ratio
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6RF Device Data
Freescale Semiconductor
MRF374A
TYPICAL CHARACTERISTICS
Figure 8. 8--VSB Intermodulation, Gain and Efficiencyversus Output Power in Broadband Circuit
Figure 9. Power Gain versus Peak Output Powerin Narrowband Circuit
Figure 10. Intermodulation Distortion versusPeak Output Power in Narrowband Circuit
Figure 11. Drain Efficiency versus Peak Output Powerin Narrowband Circuit
Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
1000
40
0.1--60
--20
Gps
η
IMR
VDD = 32 VdcIDQ = 1.1 Af = 860 MHz
,DRAINEFFICIENCY(%),
ηGps,POWER
GAIN(dB)
35 --25
30 --30
25 --35
20 --40
15 --45
10 --50
5 --55
10113
19
IDQ = 1.0 A
800 mA
Gps,POWER
GAIN(dB)
600 mA
400 mA
200 mA
18
17
16
15
14
100--55
--20
1
IDQ = 200 mA
400 mA
INTERMODULATIONDISTORTION(dBc)
IMD,
--25
--30
--35
--40
--45
--50
10
600 mA
800 mA1.0 A
1000
50
1
VDD = 32 VdcIDQ = 800 mAf = 857 MHz
40
30
20
10
10
INTERMODULATION(dBc)
IMR,
,DRAINEFFICIENCY(%)
ηD
1001 10
VDD = 32 Vdcf = 857 MHznFrequency = 6 MHz
nFrequency = 6 MHz
VDD = 32 Vdcf = 857 MHz
nFrequency = 6 MHz
Pout, OUTPUT POWER (WATTS) AVG.
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MRF374A
7RF Device DataFreescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 12. Power Gain versus Peak Output Powerin Broadband Circuit
Figure 13. Power Gain versus Peak Output Powerin Broadband Circuit
Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP
15
18
470 MHz
VDD = 28 VdcIDQ = 750 mATone Spacing = 6 MHz
Gps,POWER
GAIN(dB)
560 MHz
760 MHz
660 MHz
860 MHz
17.5
17
16.5
16
15.5
15
18
470 MHz
VDD = 32 VdcIDQ = 750 mATone Spacing = 6 MHz
Gps,POWER
GAIN(dB)
560 MHz
760 MHz
660 MHz860 MHz
17.5
17
16.5
16
15.5
860 MHz
760 MHz
Figure 14. Drain Efficiency versus Peak Output Powerin Broadband Circuit
Figure 15. Drain Efficiency versus Peak Output Powerin Broadband Circuit
Figure 16. Intermodulation Distortion versusPeak Output Power in Broadband Circuit
Figure 17. Intermodulation Distortion versusPeak Output Power in Broadband Circuit
Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEPPout, OUTPUT POWER (WATTS) PEP
45
,DRAINEFFICIENCY(%)
η
35
25
15
5
860 MHzVDD = 28 VdcIDQ = 750 mATone Spacing = 6 MHz
560 MHz
470 MHz
0
860 MHz
VDD = 32 VdcIDQ = 750 mATone Spacing = 6 MHz,DRAINEFFICIENCY(%)
η
40
30
20
10
--50
--25
INTERMODULATIONDISTORTION(dBc)
IMD,
--30
--35
--40
--45
VDD = 28 VdcIDQ = 750 mATone Spacing = 6 MHz
470 MHz
660 MHz560 MHz
INTERMODULATIONDISTORTION(dBc)
IMD,
--50
--25
--30
--35
--40
--45
860 MHz
VDD = 32 VdcIDQ = 750 mATone Spacing = 6 MHz
760 MHz
470 MHz
660 MHz560 MHz
VDD = 28 Vdc VDD = 32 Vdc
1001 10 1001 10
1001 10 1001 10
1001 10 1001 10
660 MHz
470 MHz660 MHz560 MHz
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8RF Device Data
Freescale Semiconductor
MRF374A
Figure 18. Series Equivalent Source and Load Impedance
fMHz
ZsourceΩ
ZloadΩ
845
860
875
3.33 -- j2.42
2.73 -- j3.10
3.03 -- j2.39
4.56 -- j2.86
4.22 -- j3.16
3.87 -- j3.52
VDD = 32 V, IDQ = 400 mA, Pout = 130 W PEP
Zo = 4Ω
Zsource
Zload
f = 845 MHz
f = 875 MHz
f = 845 MHz
f = 875 MHz
Zsource = Test circuit impedance as measured fromgate to gate, balanced configuration.
Zload = Test circuit impedance as measuredfrom drain to drain, balanced configuration.
Zsource Z load
InputMatchingNetwork
DeviceUnderTest
OutputMatchingNetwork
--
-- +
+
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MRF374A
9RF Device DataFreescale Semiconductor
NOTES
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10RF Device Data
Freescale Semiconductor
MRF374A
NOTES
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MRF374A
11RF Device DataFreescale Semiconductor
PACKAGE DIMENSIONS
NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1994.2. CONTROLLING DIMENSION: INCH.3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
F
EH
2
3
1
R (LID)
Q2X
C
SEATINGPLANE
CASE 375F--04ISSUE E
K4 PL
STYLE 1:PIN 1. DRAIN
2. DRAIN3. GATE4. GATE5. SOURCE
DIM MIN MAX MIN MAXMILLIMETERSINCHES
A 1.135 1.145 28.80 29.10B 0.225 0.235 5.72 5.97C 0.135 0.178 3.43 4.52D 0.210 0.220 5.33 5.59E 0.055 0.065 1.40 1.65F 0.004 0.006 0.11 0.15GH 0.077 0.087 1.96 2.21KL
N 0.638 0.650 16.20 16.50QR 0.227 0.233 5.77 5.92
4
0.900 BSC
0.220 0.2500.260 BSC
22.86 BSC
5.59 6.356.60 BSC
G
BMbbb MLMAMbbb B MT
B
B(FLANGE)
M
N
T
MAMbbb B MT
(INSULATOR)MAMccc B MT
(LID)
A(FLANGE)
A M
S (INSULATOR)
MAMbbb B MT
MAMccc B MT
5
A
M 0.643 0.657 16.33 16.69
S 0.225 0.235 5.715 5.97
.125 .135 3.175 3.43
bbb 0.010 BSC 0.254 BSCccc 0.015 BSC 0.381 BSC
T
NI--650
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12RF Device Data
Freescale Semiconductor
MRF374A
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Document Number: MRF374ARev. 5, 5/2006
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