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Geetanjali Institute of Technical Studies, Udaipur
Technical Seminar
on
NOVEL MEMORY TECHNOLOGY
Session 2010-2011
Submitted to:
ECE DepartmentPresented by:
Nishit Chittora,
Akshay Nigam,
Pankaj Chaudhary28-05-2011 Novel Memory Technology 1
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Road Map :
Memory
Data Storage Method
Semiconductor Memory
Role of memory
Role of memory during boot up
Classification of Semiconductor memory
Volatile Memory
Novel memory
Under development
History
Non Volatile memory
Novel memory
Under development
History
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Memory:
# Data storage device
A storage device may hold information
process information, or both.
# Electronic data storage
It is storage which requires electrical
power to store and retrieve that data.
# Electromagnetic data
Data may be in Analog or digital form.
Electronically coded data.
DevicesRecording: Hands , mouths , musical instruments or any type of medium.
Intermediates : eyes, ears, cameras, scanners, microphones, speakers, monitors,
video projectors)
Storage: All kind of memory technologies
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Data storage method:
Portable: easily replaced
Ex: Flat surface, Printmaking, PhotographicFabrication, Automated assembly, Solid freeform fabrication, Cylindrical accessing, Memory card reader/drive
Tape drive, Mono reel or reel-to-reel, Compact Cassette player/recorder
Semi Portable: methods requiring mechanical disassembly tools and/or opening a chassis.
Ex: Hard disk driveCircuitry with non-volatile RAM
Inseparable Method: meaning loss of memory if disconnected from the unit.
Ex: Circuitry with volatile RAMNeurons
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Semiconductor Memory:
Electronic data storage device.
Used in Computer memory.
implemented on a semiconductor based integrated circuit.
Technical Characteristics
Capacity
Access time
Cycle time
Throughput
Non volatilityThe ideal memory has a large capacity with restricted access time and
cycle time, a high throughput and is non volatile.
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All actual computing starts with the CPU(Central Processing Unit).
The chipset supports the CPU and containsseveral controllers that control howinformation travels between the CPU andother components in the PC.
The memory controller is part of thechipset and establishes the informationflow between memory and the CPU.
A bus is a data path that consists of parallelwires and connects the CPU, memory andother devices. The bus architecturedetermines how much and how fast datacan move around the motherboard.
The memory bus goes from the memorycontroller to the computer's memory sockets.Newer systems have a front side bus (FSB)from the CPU to main memory and abackside bus (BSB) from the memorycontroller to L2 cache.
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Role of memory:
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Role of memory during Boot Up
Turn On Computer
File saved to astorage device
Load Data from RAM
POST operation
Load OS form HDD to
System RAM
Files of
applicationloaded to
RAM
Load basic BIOS from ROM
the application are
purged from RAM.Save &close file
Application
open : Load to
RAM
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Classification of Semiconductor Memories
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DRAM (DDRSDRAM)
Double data rate synchronous dynamic random access memory
Dynamic random-access memory
Random access memory
Each bit is stored on separate capacitor on
integrated ckt.
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TypesDouble Data Rate
DDR 1
DDR 2
DDR 3
SRAM
Static random access memory
does not need to be periodically refreshed
uses bi stable latching circuitry to store each bit.
exhibits data remanence principle.
Types
Non volatile SRAM
By transistor type
By function
i) Asynchronous independent of clock frequency;
ii) Synchronous all timings are initiated by the clock edge
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SRAM Operation:
There are 3 modes of operation
Standby
Writing
Writing
Bus behaviour
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History of Volatile memory technology
Delay line memory
Selectron tube
Williams tube
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early form of digital computer memory
the first random access digital storage device
Selectron Tube
Williams tube
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Delay line memory was a form of computer memory used on
some of the earliest digital computers.
Delay line memory was a refreshable memory, but as opposed
to modern random-access memory, it was used as a serial-
access.
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TRAM (Developed by T RAM Semiconductor )
Thyristor RAM
New type of DRAM
Combines the strengths of the DRAM and SRAM: high speed and high volume
Based on principle ofNegative differential resistance and
is called thin capacitive coupled thyristor, is used to create memory cells capable
of very high packing densities.
highly scalable
Storage density that is several times higher than found in conventional
six transistor SRAM memory.
Next generation of T RAM memory will have the same density as DRAM.
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TT-RAM
Twin Transistor RAM
Conventional one transistor, one
capacitor DRAM in concept.
Eliminates the capacitor by relying on
the floating body effect
TTRAM offers somewhat higher densities
than conventional DRAM.
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ZRAM: Zero Capacitor RAM
Novel DRAM computer memory technology
developed by Innovative Silicon
Based on floating body effect of silicon on insulator.
Silicon claims the technology offers memory access
speeds similar to the standard
Six transistor SRAM cell used in cache memory but
uses only a single transistor, therefore affording
much higher packing densities.
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Non volatile memory:
It is computer memory that can retain the stored
information even when not powered
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Non Volatile memory : Novel Memory Technologies
PROM
EPROM
EEPROM
FLASH MEMORY
Fe RAM
MRAM
PRAM
Non Volatile memory: Under Development
CB RAM SONOS
RRAM
RACETRACK MEMORY
NRAM
MILIPEDE
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ROM: Read only Memory
PROM :Programmable ROM
Data stored in ROM cannot be modified, or can be modified only slowly or with difficulty
A programmable read-only memory (PROM) or field programmable read-only memory
(FPROM) or one-time programmable non-volatile memory(OTP NVM)
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EPROMErasable programmable read only memory
Memory chip that retains its data when its power supply
is switched off.
array of floating gate transistors individually programmed by
an electronic device that supplies higher voltages than those normally
used in digital circuits.
EPROM can be erased by exposing it to strong ultraviolet light from a
mercury vapour light source.
the transparent fused quartz window in the top, through which the silicon
chip is visible, and which permits exposure to UV light during erasing.
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EEPROMElectricallyErasable Programmable Read Only Memory
Non Volatile memory
Used to store small amounts of data that must be saved when power
is removed.
User modifiable read only memory (erased and reprogrammed
repeatedly)
Earlier EEPROM has a limited life : to tens or hundreds
Now extended to millions of times.
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Flash Memory
Non volatile computer storage chip
Can be electrically erased and reprogrammed.
Memory cards, USB flash drives, MP3 players and solid state drives.
Specific type of EEPROM that is erased and programmed in large blocks;
in early flash the entire chip had to be erased at once.
Non volatile, meaning no power is needed to maintain the information stored in the
chip.
In addition, flash memory offers
fast read access times and
better kinetic shock resistancethan hard disks.
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Comparison with EPROM and EEPROM/Flash
The difference between EPROM and EEPROM lies in the way that thememory programs and erases. EEPROM can be programmed anderased electrically using field electron emission (more commonly knownin the industry as "FowlerNordheim tunneling").
EPROMs can't be erased electrically, and are programmed via hot carrierinjection onto the floating gate. Erase is via an ultraviolet light source.
Although in practice many EPROMs are encapsulated in plastic that isopaque to UV light, and are "one-time programmable".
Most NOR Flash memory is a hybrid style programming isthrough hot carrier injection and erase is through FowlerNordheimtunneling.
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Fe RAM
Ferro electric RAM
Random access memory
Similar in construction to DRAM but uses a erroelectric layer
instead of a dielectric layer to achieve non volatility.
Same functionality as Flash memory.
Fe RAM advantages over Flash include:
i) lower power usage,
ii) faster write performance
iii) much greater maximum number
of write erase cycles.
Fe RAM disadvantages against flash are:
i)Much lower storage densities
ii) storage capacity limitations
iii)higher cost.
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SONOS, short for "Silicon-Oxide-Nitride-Oxide-Silicon", is a type of non-volatilecomputer memory closely related to Flash RAM.It is distinguished from mainstream flash by theuse of silicon nitride (Si3N4) instead ofpolysilicon for the charge storage material. SONOS promises lower programming
voltages and higher program/erase cycleendurance than polysilicon-based flash, and isan area of active research and developmenteffort
A SONOS memory array is constructed byfabricating a grid of SONOS transistors whichare connected by horizontal and vertical controllines (wordlines and bitlines) to peripheral circuitry such asaddress decoders and sense amplifiers.
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nonvolatile random access memory, is a newmemory storage technology
NRAMs are built by depositing masses ofnanotubes on a pre-fabricated chipcontaining rows of bar-shaped electrodeswith the slightly taller insulating layersbetween them.
NRAM will operate electromechanicallyrather than just electrically, setting it apartfrom other memory technologies as a non-volatile form of memory, meaning data willbe retained even when the power is turnedoff.
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Millipede is a non-volatile computer memorystored on nanoscopic pits burned into thesurface of a thin polymer layer, read andwritten by a MEMS-based probe.
It promises a data density of more than 1terabit per square inch (1 gigabit per square
millimeter), about 4 times the density ofmagnetic storage available.
Millipede storage technology is beingpursued as a potential replacement formagnetic recording in hard drives, at thesame time reducing the form-factor to that offlash media
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Racetrack memory is an experimentalnon volatile memory device underdevelopment at IBM's Alma denResearch Centre .
A racetrack memory device is made upof many such wires and read/writeelements.
As current is passed through the wire, the
domains pass by magnetic read/writeheads positioned near the wire, whichalter the domains to record patterns ofbits.
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Non Volatile Memory: Historical Memories
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Drum memory is a magnetic data
storage device.
An early form of computer
memory with data and programs
being loaded on to or off the drum
using media such as paper tape or
punched cards.
A drum is a large metal cylinder
that is coated on the outside surface
with a ferromagnetic recordingmaterial.
DRUM MEMORY
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Magnetic-core memory is an early form ofrandom-access computer memory. It uses tiny magnetic rings, the cores, through whichwires are threaded to write and read information. Each core represents one bit of information. Thecores can be magnetically polarized in two different
ways and the bit stored in a core is zero or onedepending on that core's polarity. The wires are arranged to allow an individualcore to be set to either polarity, and for its polarityto be sensed, by sending appropriate current pulsesthrough selected wires
Magnetic Core Memory
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Bubble memory is a type of non-volatilecomputer memory that uses a thin film of amagnetic material to hold small magnetizedareas, known as bubbles or domains, each ofwhich stores one bit of data.
The bubble logic would use nanotechnologyand has been demonstrated to have accesstimes of 7 ms, which is faster than the 10 msaccess times that present hard drives have,though it is slower than the access time oftraditional RAM and of traditional logiccircuits, making the proposal notcommercially practical at present
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THANK YOU
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