Def
ect a
nnea
ling
in 4
H-S
iC
A. C
asta
ldin
i1 , A
. Cav
allin
i1 , L
. Rig
utti1
, F. N
ava2
1 INFM
and
Dip
artim
ento
di F
isic
a, U
nive
rsità
di B
olog
na, B
olog
na, I
T
2 INFN
and
Dip
artim
ento
di F
isic
a, U
nive
rsità
di M
oden
a e
Reg
gio
Em
ilia,
Mod
ena,
IT
Def
ect a
nnea
ling
in 4
H-S
iCA
.Cav
allin
i
Uni
vers
ity o
f Bol
ogna
INFM
Det
ectio
n an
d ch
arac
teriz
atio
n of
ele
ctric
ally
act
ive
defe
cts:
•Dee
p Le
vel T
rans
ient
Spe
ctro
scop
y: c
once
ntra
tion,
ene
rgy
leve
l (e
ntha
lpy)
and
cap
ture
cro
ss s
ectio
n of
ele
ctric
ally
act
ive
defe
cts.
•Cap
acita
nce-
Vol
tage
Cha
ract
eriz
atio
n:fre
e ch
arge
car
rier d
istri
butio
n.
•Ele
ctro
n B
eam
Indu
ced
Cur
rent
:sp
atia
l dis
tribu
tion
and
reco
mbi
natio
n st
reng
th o
f ext
ende
d de
fect
s.
Cha
ract
eriz
atio
n of
the
devi
ce:
Cur
rent
-Vol
tage
Cha
ract
eriz
atio
n: b
ehav
ior o
f dar
k cu
rrent
in p
rese
nce
of
defe
cts.
•C
harg
e C
olle
ctio
n E
ffici
ency
:effe
ct o
f the
def
ects
on
sam
ple
perfo
rman
ce a
s a
char
ged
parti
cle
dete
ctor
.
Cha
ract
eriz
atio
n Te
chni
ques
Def
ect a
nnea
ling
in 4
H-S
iCA
.Cav
allin
i
Uni
vers
ity o
f Bol
ogna
INFM
App
licat
ions
•Def
ectiv
e S
tate
ana
lyse
sto
pre
dict
trap
ping
effe
cts.
•Spa
tial d
istri
butio
nof
maj
or re
com
bini
ng c
ente
rs.
•Ann
ealin
g an
d re
cove
ryof
free
cha
rge
carr
iers
at l
ow
tem
pera
ture
.
•Irra
diat
ion
effe
cts
(rad
iatio
n ha
rdne
ss).
•Ana
lysi
s of
irra
diat
ion-
indu
ced
com
pens
atio
n ef
fect
s.
•CC
Ean
alys
is a
s a
func
tion
of ir
radi
atio
n an
d an
neal
ing
tem
pera
ture
.
Mat
eria
l
Def
ect a
nnea
ling
in 4
H-S
iCA
.Cav
allin
i
Uni
vers
ity o
f Bol
ogna
INFM
n+ , 4H
– S
iC, 3
60 µ
m
subs
trat
e
ND ≅
7 ⋅
1018
cm
-3
10 m
icro
pipe
/cm
2
n+ , buf
fer,
1 µ
m, N
D =
1018
cm
-3
n, 4
H –
SiC
, 30
µ mN
D =
2.2
⋅ 1015
cm
-3
circ
ular
Sch
ottk
y c
onta
ct
Au
(100
0 Å
), Φ
= 2
mm
Ohm
ic c
onta
ct -
Ti/P
t/Au
Si-f
ace
C-f
ace
IRR
AD
IATI
ON
:
8.6
MeV
el
ectr
ons
at
diffe
rent
do
ses/
fluen
ces
Flue
nce
(cm
-2)
Dos
e
9.48
x 1
01440
Mra
d
2.37
x 1
01410
Mra
d
4.74
x 1
0132
Mra
d
•n 4
H-S
iCep
ilaye
r gro
wn
by C
VD
:
N
D=2
.2x1
015cm
-3, 3
0µm
thic
k•A
u S
chot
tky
cont
act,
φ =2
mm
, 100
0Åth
ick
EB
ICm
icro
grap
hs
Def
ect a
nnea
ling
in 4
H-S
iCA
.Cav
allin
i
Uni
vers
ity o
f Bol
ogna
INFM
Dis
loca
tions
ap
pear
as
dark
spo
ts o
n th
e su
rface
Dis
loca
tion
dens
ity is
ab
out
105
cm-2
EB
IC c
ontra
st
up to
40%
DLT
S a
naly
sis
–Irr
adia
tion
indu
ced
deep
leve
ls
Def
ect a
nnea
ling
in 4
H-S
iCA
.Cav
allin
i
Uni
vers
ity o
f Bol
ogna
INFM
100
200
300
400
500
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
en=4
6.5
s-1
40 M
rad
S6
S5S4
S3S2
S1
S0
as-re
cive
dx1
00
Tem
pera
ture
(K)
∆C/C
Virg
in (X
100
)
40 M
rad
–9.
48 x
1015
e/cm
2
DLT
S a
naly
sis
–Tr
ap p
aram
eter
s
Def
ect a
nnea
ling
in 4
H-S
iCA
.Cav
allin
i
Uni
vers
ity o
f Bol
ogna
INFM
Intro
duct
ion
rate
η(c
m-1
)
Cap
ture
cro
ss
sect
ion
σ int
er (c
m2 )
Con
cent
ratio
n
NT
(cm
-3)
Dee
p le
vel e
ntha
lpy
ET
(eV
)
0.09
7.2
x 10
-15
4.6
x 10
13E
c -0
.89
S50.
276.
6 x
10-1
51.
3 x
1014
Ec -0
.75
S4
0.88
1.4
x 10
-16
1.7
x 10
-14
4.2
-5.4
x 1
014E
c -0
.50
/ 0.6
5S3
*
0.84
1.7
x 10
-15
4.0
x 10
14E
c -0
.39
S20.
116
9.3
x 10
-16
5.5
x 10
13E
c -0
.23
S10.
026.
0 x
10-1
61.
4 x
1013
Ec -0
.15
S0
Trap
leve
l
*S
3 un
derg
oes
anne
alin
g at
T~4
00-4
70K;
the
para
met
ers
afte
r ann
ealin
g ar
e ty
pica
l of t
he le
vel
know
n fro
m th
e lit
erat
ure
as Z
1/Z2
DLT
S a
naly
sis
–A
rrhe
nius
Plo
t
Def
ect a
nnea
ling
in 4
H-S
iCA
.Cav
allin
i
Uni
vers
ity o
f Bol
ogna
INFM
24
68
1012
101
102
103
104
105
S1
S2B
S4
S3
S5
S0
S2
SiC
I4 v
irgin
SiC
G7
2 M
rSi
C A4
10
Mr
SiC
G1
40 M
rSi
C G
4 40
Mr u
p do
wn
KT
2/en (K
2 s)
1000
/T (K
-1)
600
400
200
300
100
DLT
S a
naly
sis
–Fi
lling
Kin
etic
s
Def
ect a
nnea
ling
in 4
H-S
iCA
.Cav
allin
i
Uni
vers
ity o
f Bol
ogna
INFM
01x
10-6
2x10
-63x
10-6
4x10
-65x
10-6
0.010.11
10-7
10-6
10-5
10-4
10-3
10-2
10-1
100
0
100
200
300
400
500
600
700
800
900
1000
a.u.
Tp (s
)
G1
306K
G1
449K
S4
3.06
E-1
7
S3
1.4E
-17
a.u.
Tp (s
)σ=cm
2
DLT
S a
nd a
nnea
ling
anal
ysis
Def
ect a
nnea
ling
in 4
H-S
iCA
.Cav
allin
i
Uni
vers
ity o
f Bol
ogna
INFM
5010
015
020
025
030
035
040
045
050
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
S3
S2
S0 x 20
∆C/C (arb.units)
Tem
pera
ture
(K)
5010
015
020
025
030
035
040
045
050
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
S2∆C/C (arb.units)
Tem
pera
ture
(K)
5010
015
020
025
030
035
040
045
050
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
S4S2
B
S2∆C/C (arb.units)
Tem
pera
ture
(K)
5010
015
020
025
030
035
040
045
050
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
S5
S2B
S1
S2∆C/C (arb.units)
Tem
pera
ture
(K)
5010
015
020
025
030
035
040
045
050
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
S5
S2∆C/C (arb.units)
Tem
pera
ture
(K)
1stan
neal
ing
stag
e
(360
–40
0 K
):
•ver
y st
rong
de
crea
se o
f pea
k S
2
•slig
ht a
mpl
itude
ga
in a
nd
tem
pera
ture
shi
ft of
S3
•S2B
and
S1
beco
me
reso
lved
2ndan
neal
ing
stag
e
(400
–47
0 K
) :
•blu
e sh
ift o
f S
3 ac
tivat
ion
ener
gy
•sha
rpen
ing
of
S3
peak
1. R
un 8
0-36
0K2.
Run
80-
400K
3. R
un 4
00-1
50K
4. R
un 1
60-4
70K
5. R
un 4
70-8
0K
C-V
ana
lysi
sD
efec
t ann
ealin
g in
4H
-SiC
A.C
aval
lini
Uni
vers
ity o
f Bol
ogna
INFM
01
23
45
1013
1014
1015
1016
as-g
row
n
irrad
iate
d -
afte
rre
cove
ry
Apparent concentration (cm-3)
X (µ
m)
irrad
iate
d -
befo
rere
cove
ry
•Str
ong
com
pens
atio
nof
free
cha
rge
for Φ
= 9.
48 x
1014
cm-2
(~1/
10 o
f th
e as
-gro
wn
valu
e).
•Sig
nific
ant f
ree
char
ge d
ensi
ty in
crea
se a
fter a
nnea
ling
of p
eak
S2at
360
K-4
00K
.
Pos
t-rec
over
y fre
e ch
arge
incr
ease
Pos
sibl
e ex
plan
atio
n:
reco
mbi
natio
n an
d an
nihi
latio
n of
the
defe
ct re
late
d to
leve
l S2
Pos
sibl
e ex
plan
atio
n:
reco
mbi
natio
n an
d an
nihi
latio
n of
the
defe
ct re
late
d to
leve
l S2
CC
E c
hara
cter
izat
ion
Def
ect a
nnea
ling
in 4
H-S
iCA
.Cav
allin
i
Uni
vers
ity o
f Bol
ogna
INFM
050
100
150
200
020406080100
G4
Φ=
9.48
x 1
014 e
/cm
2
CCE (%)
REV
ER
SE
BIA
S (V
)
Pre
-rec
over
y P
ost-r
ecov
ery
CC
E v
s. ir
radi
atio
n do
se
•In th
e di
ffusi
on re
gim
e (B
ias<
~160
V) C
CE
is
deg
rade
d by
the
intro
duct
ion
of tr
aps.
•In th
e dr
ift re
gim
e (B
ias>
~160
V) C
CE
sa
tura
tes
to 1
00%
for a
ll irr
adia
tion
dose
s.
CC
E vs
. ann
ealin
g
•Low
T a
nnea
ling
does
not
cha
nge
the
CC
E o
f the
det
ecto
r.
Con
clus
ions
D
efec
t ann
ealin
g in
4H
-SiC
A.C
aval
lini
Uni
vers
ity o
f Bol
ogna
INFM
•El
ectro
n irr
adia
tion
–In
trodu
ctio
n of
at l
east
4 tr
ap le
vels
. –
Stro
ng c
ompe
nsat
ion
of fr
ee c
arrie
r den
sity
.
•1st
Ann
ealin
g st
age
(360
K-4
00K
): –
Dis
appe
aran
ce o
f lev
el S
2 (E
c-0.
39 e
V).
–Fr
ee c
arrie
r den
sity
incr
ease
(rec
over
y).
–R
earra
ngem
ent o
f pea
k S
3.
•2nd
Ann
ealin
g st
age
(400
K-4
70K
): –
Blue
shi
ft of
S3
leve
l ene
rgy;
S3
para
met
ers
are
thos
e of
Z1/
Z2 le
vel.
•P
ossi
ble
reco
very
cau
se: a
nnih
ilatio
n of
the
defe
ct re
late
d to
S2
durin
g 1s
t an
neal
ing
stag
e (3
60K
-400
K).
•D
etec
tor p
erfo
rman
cepr
eser
ved
up to
Φ ~
1015
cm-2
.
-CC
E s
atur
ates
to 1
00%
in d
rift r
egim
e an
d re
mai
ns u
ncha
nged
upo
n an
neal
ing.
9 M
eV e
lect
ron
irrad
iatio
n on
C
dZnT
e
Def
ect a
nnea
ling
in 4
H-S
iCA
.Cav
allin
i
Uni
vers
ity o
f Bol
ogna
INFM
020
040
00
1000
2000
3000
4000
5000
6000
7000
counts
chan
nels
as-g
rown
0.2 M
rad
0.6 M
rad
0.8 M
rad
1.2 M
rad
1.6 M
rad
10
01
50
20
02
50
30
03
50
40
0
1x1
0-2
2x1
0-2
3x1
0-2
4x1
0-2
as
-gro
wn
0.2
Mra
d 0
.6 M
rad
0.8
Mra
d 1
.2 M
rad
1.6
Mra
d
H
W
Y
ZJ
XC
A1
A
te
mp
era
ture
(K
)
PICTS/IL0 (a.u.)
Gam
ma
Spe
ctro
scop
yP
ICTS
Tim
e re
cove
ry o
f 9 M
eV e
lect
ron
irrad
iate
d C
dZnT
e (6
mon
ths)
Def
ect a
nnea
ling
in 4
H-S
iCA
.Cav
allin
i
Uni
vers
ity o
f Bol
ogna
INFM
10
01
50
20
02
50
30
03
50
40
0
1x1
0-2
2x1
0-2
3x1
0-2
4x1
0-2
as-
gro
wn
1 M
rad
aft
er
irra
dia
tion
1 M
rad
aft
er
6 m
on
ths
D
H1
W
YJ
XC
A1
A
te
mp
era
ture
(K
)
PICTS/IL0 (a.u.)
010
020
030
040
00
1000
2000
3000
4000
5000
6000
7000
as-gr
own
1 Mr
ad af
ter irr
adiat
ion 1
Mrad
after
6 mo
nths
counts
chan
nels
PIC
TSG
amm
a S
pect
rosc
opy
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