ZVEI Passive Markus Stöger R&D Recom - GaNonCMOS...2020/03/24 · RECOM is an international...
Transcript of ZVEI Passive Markus Stöger R&D Recom - GaNonCMOS...2020/03/24 · RECOM is an international...
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ZVEI Passive
Markus Stöger
R&D Recom
POWER SUPPLIES FOR DISTRIBUTED POWER ARCHITECTURE
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■ RECOM is an international corporation which develops, manufactures, and sells innovative AC/DC &
DC/DC converters as well as switching regulators and LED drivers around the globe.
■ RECOM is the global leading brand for low power converter modules as well as the fastest growing
power supply company on the market and provides a world class rep & distribution network.
■ RECOM simplifies and accelerates the development process of power supply design for its customers
products, speeding up their time-to-market.
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RECOM. A Success Story Over 45 Years
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Power Supplies for Distributed Power Architecture
Innovative. Efficient. Extremely Reliable!
The concept of distributed power architecture,
the combination of a centralized switching power
supply with many local “on board“ converters,
enables developers to come up with much more
flexible and efficient designs.
Today, "off-the-shelf" modules are available for
virtually any application in the industrial, telecom,
medical, railway, transportation, and energy sectors.
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■ 1975 Founding of RECOM Electronic in Dietzenbach, Germany
■ 2003 Founding of RECOM Engineering and RECOM Power in Gmunden, Austria
■ 2004 Expansion to Asia – RECOM Asia, Singapore
■ 2006 Expansion to the Americas – RECOM Power in New York, USA
■ 2007 Opening environmental and reliability test lab in Gmunden, Austria
■ 2012 Worldwide expansion, new business unit RECOM Lighting
■ 2012 Opening of SMT-Manufacturing RECOM Technology in Kaohsiung, Taiwan
■ 2014 Opening of the new headquarters in Gmunden, Austria
Expansion to Japan – RECOM Power in Tokyo, Japan
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History
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■ 2015 Opening of State-of-the-Art EMC Lab in Gmunden, Austria
■ 2016 Relocation of US office to Denver, USA
■ 2017 Establishment of RECOM Power Xiamen, China
■ 2018 Creation of Power Solutions in Vienna, Austria
■ 2019 Acquisition of the power specialist “Power Control Systems Srl” (PCS) in Veneto, Italy
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History
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Global Structure
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Headquarters
The RECOM Headquarters located in Gmunden / Austria
Research and Development Department
Quality Lab
Application Engineering
Test and EMC Lab
Global Logistics
Marketing
Finance Center
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Headquarters
3000m² effective area divided in 3 floors
3 high-tech laboratories including:
State-of-the-art EMC lab
X-Ray microscope
High-resolution thermal camera
HALT & Environmental test chambers
Modern low-energy building
Global logistics center
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EMC Lab
Semi-Anechioc 3m chambers for pre-compliance EMI
measurements in Gmunden and Vienna
GTEM cell for radiated immunity testing
ESD, burst, and surge testing
RECOM offers “POWER SUPPLY MEETS EMC-KNOW
HOW” seminars:
recom-power.com/emc
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Best-In Class Distribution Network
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Product Portfolio
DC/DC converters (0.25W – 240W)
Variety of package styles and sizes (THD, SMD)
Industry standard input/output voltages
High isolation up to 20kVDC/1Sec
Global certifications (UL/IEC/EN62368, ES/UL/IEC/EN60601...)
Suitable for a wide variety of applications:
Industrial, Medical, Railway, Energy, Instrumentation, Inverters,
Telecom, etc.
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Product Portfolio
AC/DC converters (1W – 960W)
DIN-Rail, board mounted, wired, open frame
Universal input voltage range for 100V-230V-277V-480V
Extended warranty up to 7 years for Din Rail and 5 years for Medical
Global certifications (UL/IEC/EN62368, IEC/EN60335-1,
ES/UL/IEC/EN60601, IEC61558-2-16)
Suitable for a wide variety of applications:
Industrial, Medical, IoT, IIoT, Machinery,
Instrumentation, Audio/Video, etc.
recom-power.com/acdc
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Product Portfolio
Switching regulators (Non-Isolated DC)
Buck, Boost, and Buck/Boost topologies
THD (3-pin, 12-pin), SMD (DOSA-compatible footprint), wired, QFN
High efficiencies up to 99%
Low EMC noise
Wide input voltage ranges
Easy-to-use, expedite time-to-market
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Product Portfolio
AC/DC LED drivers (3W – 25W)
CC/CV mode
Global certifications (ENEC, UL, PSE, EN)
Small packages, low profile
DALI accessories:
DALI bus power supply, DALI dimming interface
DC/DC LED driver (1W – 65W)
Wide input range (~60V)
PWM/1-10 analog dimming
Small packages
Buck, buck-boost
THD, SMD, wired
High efficiencies up to 96%
EN/UL60950, EN50121
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Product Portfolio
Reference Design & Evaluation Boards
Reference design boards and evaluation boards speed up development time.
IoT sensor eval board
Evaluation Boards for RPM and RPX Power Modules
Evaluation Board for RBB10 Buck/Boost Converter
R-78S evaluation board allows battery calculations
Reference Board for isolated ISO1042 CAN Transceiver
Complete reference designs for DC/DC railway converters
Reference Design, R-78S boosts a AA battery to continuous 3.3V for IoT
Half-bridge Reference Design for IGBT, SiC & GaN transistors
recom-power.com/evalboards
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Product Portfolio
Medical DC/DC and AC/DC (1W – 550W)
THD, SMD, wired, open frame, metal enclosure
Reinforced isolation with 2MOPP (250Vrms)
Very low leakage current (BF/CF grade)
IEC/EN/ES/UL 60601-1 (3rd edition)
Customized solutions available
recom-power.com/medical
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Product Portfolio
Railway DC/DC (8W - 240W)
Input range from 9 to 160VDC
Isolation from 1.6 to 3kVDC
Standard railway packages with optional baseplate or heatsink
Rugged design for harsh environments
CE, EN50155, EN/IEC/UL60950
Customized solutions available
recom-power.com/railway
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Custom Specific Design Solutions
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POWER CONTROL SYSTEMS s.r.l. a new member of the RECOM group since 2019
Founded in 1980
Leading company in switching power supplies
Highest quality and reliability standards for safety critical applications
Wide range of custom specific design solutions made in the EU
Guaranteed testing during every phase of the production process, from design to delivery (including active BURN-IN cycle and full reports)
Main application areas
Railway (on-board and track-side applications) Transportation Military, Nautical, and Avionics Telecommunication Industrial Harsh environments
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Custom Specific Design Solutions
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DC/DC, AC/DC, DC/AC SOLUTIONS
Rating MAX MIN MAX
Input voltage Output power
AC/DC up to 400V 1W 30KW
DC/DC up to 800V 1W 30kW
DC/AC up to 200V 100W 30kW
Specifications
Output voltage (single & multiple) up to 400V
Output current 250A
Operating temperature °C -55°C to +85°C
Efficiency up to 96%
Mechanical features (examples)
Open card n
Closed box n
19” rack module n
Resinated module n
DIN-Rail n
DieCast Aluminium Box n
Connecting interfaces n
Screw connectors n
DIN 41612 connectors n
Wired connectors (e.g. Molex etc.) n
Spring connectors (e.g. Wago etc.) n
Pressfit connectors n
DSUB connectors n
MIL connectors n
Industrial connectors (e.g. Harting etc.) n
Standards & Certifications All safety standards & certifications applicable for: Railway,
Industrial, Medical, Military, Nautical, Aviation etc.
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Certifications
ISO-9001 ISO-14001 IATF 16949
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IRIS
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Industries
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Industrial, IIoT, IoT
42%
Others
5%Telecom
2%
Lighting
2%
Medical
10%
Railway
7%
Transportation
12%
Test and
measurement
6%
Energy
14%
Industrial, IIoT, IoT
Others
Telecom
Lighting
Medical
Railway
Transportation
Test and measurement
Energy
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Global Customers
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Main Offices
RECOM Electronic
Frankfurt, Germany
RECOM Power
Denver, USA
RECOM Asia
SingaporeRECOM Power
Tokyo, Japan
RECOM Asia
Shanghai, China23
Power Control Systems
Veneto, Italy
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Factories
RECOM Technology
Kaohsiung, TaiwanRECOM Manufacturing
Kaohsiung, Taiwan
RECOM Power Xiamen
Xiamen, China
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PCS Manufacturing
Veneto, Italy
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Zukünftige Anforderungen an passive Bauelemente bei WBG Anwendungen
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Zukünftige Anforderungen an passive Bauelemente bei WBG Anwendungen
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6,3” x 4”
≈250W/dm3
2”x 4“
≈1KW/dm3
?
Beinahe perfekte Transistoren sind verfügbar • Höhere Schaltfrequenzen
• Kleinere Bauform
• Ressourcenschonend
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Spannungslevel
Mittel und Hochspannung Netzanwendungen < 100V
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Spannungslevel
Mittel und Hochspannung Netzanwendungen < 100V
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Spannungslevel
Mittel und Hochspannung Netzanwendungen < 100V
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Zukünftige Anforderungen an passive Bauelemente bei WBG Anwendungen
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Schaltgeschwindigkeiten (600V Bauteile)
• GaN HEMT > 100MHz (Datenblatt)
• SIC MOSFET mehrere kA /µS
• SI Superjunction MOSFET >100V/ns
• SI Trench IGBTs >20V/ns
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Zukünftige Anforderungen an passive Bauelemente bei WBG Anwendungen
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Beispiel: 1 phasiges Power Supply
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Zukünftige Anforderungen an passive Bauelemente bei WBG Anwendungen
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Beispiel: 1 phasiges Power Supply
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Zukünftige Anforderungen an passive Bauelemente bei WBG Anwendungen
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Anforderungen an den Netzfilter :
• Effektiv bei höheren Schaltfrequenzen
• Wirkungsvoll auch im höheren Frequenzbereich
• Kompakt (gilt für sämtliche Komponenten)
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Leitungsgebundene Messungen von 150kHz bis 30Mhz
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Leitungsgebundene Messungen von 150kHz bis 30Mhz
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Leitungsgebundene Messungen von 150kHz bis 30Mhz
Gängige Methode war es die Schaltfrequenz unter 150 kHz zu wählen.
Beispiel 45 kHz ,70kHz oder 140 kHz
Bei 140 kHz musste die Grundwelle der Schaltfrequenz nicht mitgemessen werden
Bei 70 kHz die erste harmonische auch nicht
Bei 45 kHz die zweite auch nicht.
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Zukünftige Anforderungen an passive Bauelemente bei WBG Anwendungen
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Leitungsgebundene Messungen von 150kHz bis 30Mhz
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Schaltflanken werden schneller
Rise and fall times bei Siliziumbauteilen im Hinblick auf EMV
Ideal: 400ns
Gängig : 200ns
Sehr schnell: 50ns
Bei GaN:
<50 ns
1-4 ns
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Impedanzen einer CMC ( Quelle Pulse)
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Zukünftige Anforderungen an passive Bauelemente bei WBG Anwendungen
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PFC stage
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Zukünftige Anforderungen an passive Bauelemente bei WBG Anwendungen
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Es existieren viele Möglichkeiten einen PFC zu realisieren
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Anforderungen an die PFC Drossel
• Kleinere Bauform bei gleichen Verlusten
• Idealerweise mit E-Feld Abschirmungen
• Verteilter Luftspalt
• Ausgelegt für schnelle Schaltflanken
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Schnelle Schaltflanken: Was bedeutet das?
Vivien Grau
Durchgeführte Tests:
• Standartisierter Isolationstest von 5kV
• Bipolare Rechteckspannung mit Uin:400VDC
14V/ns
107V/ns
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Vivien Grau
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Schnelle Schaltflanken: Was bedeutet das?
Vivien Grau
500kHz Schaltfrequenz
107 V/ns
Isolationsversagen nach wenigen
Minuten
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Andere Effekte:
Einfluss höherer Resonanzfrequenzen bei einer Induktivität
Prof. Dr. –Ing. Alexander Stadler
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Andere Effekte:
Einfluss höherer Resonanzfrequenzen bei einer Induktivität
Prof. Dr. –Ing. Alexander Stadler
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Andere Effekte:
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Zwischenkreis Kondensator
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Schaltzelle Schaltzelle mit parasitären Induktivitäten
LLayout
LLayout
LPackage
LPackageESL
ESL
LParasitic
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LParasitic
+
+
-
-
Polaritäten Highsideschalter eingeschaltet
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LParasitic
+
+
-
-
Polaritäten während Schaltvorgang
𝑑𝑖
𝑑𝑡
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LParasitic
+
+
-
-
Polaritäten während Schaltvorgang
𝑑𝑖
𝑑𝑡 𝑈 = 𝐿 ∗𝑑𝑖
𝑑𝑡
![Page 54: ZVEI Passive Markus Stöger R&D Recom - GaNonCMOS...2020/03/24 · RECOM is an international corporation which develops, manufactures, and sells innovative AC/DC & DC/DC converters](https://reader036.fdocuments.in/reader036/viewer/2022071214/60440503120eda7c5560ca5a/html5/thumbnails/54.jpg)
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LParasitic
+
+
-
-
Polaritäten während Schaltvorgang
𝑑𝑖
𝑑𝑡 𝑈 = 𝐿 ∗𝑑𝑖
𝑑𝑡
![Page 55: ZVEI Passive Markus Stöger R&D Recom - GaNonCMOS...2020/03/24 · RECOM is an international corporation which develops, manufactures, and sells innovative AC/DC & DC/DC converters](https://reader036.fdocuments.in/reader036/viewer/2022071214/60440503120eda7c5560ca5a/html5/thumbnails/55.jpg)
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Rechenbeispiel 1:
Layoutinduktivität: 15 nH
(entspricht in etwa 2,5 cm Leitung)
ESL vom Zwischenkreiskondensator: 32nH
Vishay MKP1848
Package Induktivität 2nH
di/dt = 30A/3ns
U=L*di/dt = (15nH+32nH+2nH) *30A/3ns= 490V
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Rechenbeispiel 1:
Layoutinduktivität: 15 nH
(entspricht in etwa 2,5 cm Leitung)
ESL vom Zwischenkreiskondensator: 4nH
TDK Ceralink
Package Induktivität 2nH
di/dt = 30A/3ns
U=L*di/dt = (15nH+4nH+2nH) *30A/3ns= 210V
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Rechenbeispiel 1:
Layoutinduktivität: 1,5 nH
(entspricht in etwa 2,5 mm Leitung)
ESL vom Zwischenkreiskondensator: 4nH
TDK Ceralink
Package Induktivität 2nH
di/dt = 30A/3ns
U=L*di/dt = (1,5nH+4nH+2nH) *30A/3ns= 75 V
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Schnelles Schalten erfordert niedrige parasitäre Induktivitäten
Nicht nur bei der Konstruktion des Kondensators, sondern auch durch das Layout, also
der Entfernung zur Schaltzelle
Dadurch werden die Kondensatoren zusätzlich durch die Verlustleistung der Halbleiter
erwärmt.
Maximale Junctiontemperatur von GaN liegt bei 150°, von SiC bei 175° (limitiert vom
package)
D.h. der Zwischenkreiskondensator limitiert die Gesamtperformance.
(Ceralink funktioniert bereits bis 150°….)
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Schaltzelle
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Schaltzelle
Power GND
Signal GND
+Vout
-Vout
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Höhere Schaltfrequenz = höherer Stress auf die Isolation
Isolationsmaterialien
altern !!!!!
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Angaben bei Isolierstoffen
Durchschlagspannung [kv/mm]
• Mehrere kV/mm
• Angabe im Neuzustand
• Angabe meist DC oder 50-60Hz AC
• Temperatur abhängig
• Spannungsanstiege im Bereich 500V/s
• Dickenabhängig
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Angaben bei Isolierstoffen Durchbruchspannung fester Isolationen
Aus der IEC 60664-4
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Angaben bei Isolierstoffen
Durchbruchspannung vs.
Materialstärke bei Polyesterfolie
(Quelle: CMC)
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Angaben bei Isolierstoffen
Isolierstoffklassen
Gibt an bei welcher Dauergebrauchstemperatur die
Durchschlagspannung nach 20.000 Stunden, d.h. ca. 2,3
Jahre auf 50% sinkt
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Angaben bei Isolierstoffen
Erreichen der halben Durchschlagspannung nach UL746B (Quelle: CMC)
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Durchschlag in Gasen
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Durchschlag in Gasen
Vor dem Durchschlag Durchschlag Nach dem Durchschlag
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Durchschlag in Gasen
Paschenkurve Durchbruchspannung vs. Frequenz in Luft bei AtmosphärendruckIEC 60664-4
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Teilentladung
Teilentladung ist eine Plasmabildung innerhalb von
Gaseinschlüssen
Teilentladung tritt sowohl bei organischen als auch
bei anorganischen Isolierungen auf
Bei organischen tritt allerdings ein Carbonisierung
der Oberfläche auf,was zur Isolationsschwächung
führt
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Teilentladungsprüfung
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Teilentladungsprüfung
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Teilentladungsprüfung
Abhängigkeit Lebensdauer vs. Betriebsspannung mit Teilentladung (Dupont)
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Einfluss auf die Lebensdauer
• Temperatur
• Frequenz
• Druck (Meereshöhe)
• Spannungsstress / Teilentladung
• Zusätzlicher Stress durch Resonanzen
• Spannungsspitzen durch di/dt
• Dicke der Isolation
• dv/dt
• ……
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Gate Übertrager
Teilweise unzureichend definierte Betriebsspannungen
Nicht standardisiert.
Beispiel:
Isolation voltage :1000VRMS
The isolation test voltage represents a measure of immunity to
transient voltages and the part should never be used as an
element of a safety isolation system. The part could be
expected to function correctly with several hundred volts offset
applied continuously across the isolation barrier
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Gate Übertrager
Beispiel:1500Vrms isolation (380Vrms continuous)Operating frequency: 50kHz and up
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Barrier Insulation Evaluation & Research
Priv.-Doz. Dipl. –Ing. Dr.techn. Christof Sumereder / TU Graz, FH JohanneumRecom Team
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Barrier Insulation Evaluation & Research
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Barrier Insulation Evaluation & Research
Test Parameter
Testdauer: 1464h
Testspannung: 1000V
Umgebungstemperatur: 70°C
R12P22005D 93°C
C2M1000170D-NC 116°C
Schaltfrequenz 50kHz
dv/dt 65kV/µs
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Barrier Insulation Evaluation & Research
Teilentladungsmessungen MPS TPP15
0,00
0,50
1,00
1,50
2,00
2,50
3,00
3,50
4,00
4,50
5,00
UPD Peak [KV] before Test
0,00
0,50
1,00
1,50
2,00
2,50
3,00
3,50
4,00
4,50
5,00
UPD Peak [kV] after Test
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Resonanzkondensator
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Resonanzkondensator
Frequenz vs AC Spannung bei 10k EigenerwärmungWima MKP10
Tmax: 100-110°C
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Resonanzkondensator
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Transformator
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Transformator
Ferritkern
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61558-2-16
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Spannungslevel
Mittel und Hochspannung Netzanwendungen < 100V
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■ Erhöhung der Leistungsdichte von <100V DCDC
Wandlern durch Embedden von Bauteilen und der
Integration von GaN auf Silizium
■ Endziel: Wafer zu Waver Bonden vom GaN
Halbleiter zum Cmos Treiber.
88
GaNonCMOS – European project
PCBL
IHP Dr_v4/Ctrl_v3
IAF GaN
PCB DEMO(niedrige
Integration)
CHIP DEMO(hohe Integration)
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GaNonCMOS ist ein Horizon 2020 Projekt, 2017-2020 6.2M€ budget, 10 Firmen
Hohe Frequenzen(100MHz-200MHz wurden angestrebt)
Entwicklung von einem GaN Transistur und dessen Charkterisierung(Epigan, IAF, KUL)
Entwicklung des Treibers(IHP)
Neue Magnetische Materialien zum einbetten in der Leiterplatte (Tyndall, AT&S) + Charakterisierung(Tyndall, RECOM)
Neues Testequipment wurde benötigt, neue Prozesse(IBM – wafer to wafer bonding)
Marktanalyse und Projektmarketing (PNO, RECOM)
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GaNonCMOS – Aufgaben
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Volumensreduktion der passive Komponenten
Verbesserung der Regelung (transient response)
Schaltverluste steigen- GaN hilft hier
Magnetische Materialien für höhere Frequenzen sind Mangelware
EMI kann Probleme Machen (hohes dv/dt)
Parasitische Effekte wirken sich verstärkt aus
Schnelle Treiber sind nicht verfügbar
Höhere Leistungsdichte = höhere thermische Belastung
Teureres Equipment wird zum Messen benötigt.
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GaNonCMOS – Hohe Frequenzen
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Suche nach Materialien zum Einbetten
AT&S bettet das “sheet Material” ein– Ringkern wurde gewählt fürPCB Demos
Delamination des PCBs nach dem reflow-Löten bei einigen Materialien
Tyndall entwickelt neue CZT und Ni/Fe Dünnschicht Materialien für CHIP Demos (mehrere
10 MHz)
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GaNonCMOS – Magnetics
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Ringkern mit Sheet Material
Dicken bis 500µm sind möglich
Luftspalte sind ebenfalls möglich
92
GaNonCMOS – Magnetics
Größere Flächen sind
möglich (Wireless charger
demo)
50mmx50mmx500um,
1.1mm PCB Dicke, 5V/1.3A
Erste Tests des Materials
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■ Eingebettete Induktivität in einem buck converter
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GaNonCMOS – Magnetics
Wurth ECP 006ECP 004
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PCB Demo 6
Buck Converter 36Vin/3Aout; Vout runter bis1V
Demonstriert eingebettete Induktivität
2.1MHz Schaltfrequenz
Flaches Design
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GaNonCMOS – PCB Demos
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PCB Demo 6 v1 – Lebensdauer tests – HTHH (High Temperature High Humidity)
■ 85C/95RH 2x96hours unbiased
■ 5 samples PCB-DEMO-6,
■ 1 sample mit standard chip Drossel
■ Wirkungsgrad – verringert sich nach 96h, keine weitere Veränderung nach192h
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GaNonCMOS – PCB Demos
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PCB Demo 6 v1 – Lebensdauer Test– HTHH (High temperature High Humidity)
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GaNonCMOS – PCB Demos
Efficiency vs Load Over Vin _Eff_Bef96h_
0
10
20
30
40
50
60
70
80
90
100
0 0,5 1 1,5 2 2,5
Load Current [A]
Eff
icie
nc
y [
%]
Eff@4,0V
Eff@4,1V
Eff@4,3V
Eff@4,5V
Eff@5,0V
Eff@9,0V
Eff@12,0V
Eff@15,0V
Eff@18,0V
Eff@24,0V
Eff@30,0V
Eff@36,0V
GOC0140 _Eff_Bef96h_
Efficiency vs Load Over Vin _Eff_Aft96h_
0
10
20
30
40
50
60
70
80
90
100
0 0,5 1 1,5 2 2,5
Load Current [A]
Eff
icie
nc
y [
%]
Eff@4,0V
Eff@4,1V
Eff@4,3V
Eff@4,5V
Eff@5,0V
Eff@9,0V
Eff@12,0V
Eff@15,0V
Eff@18,0V
Eff@24,0V
Eff@30,0V
Eff@36,0V
GOC0140 _Eff_Aft96h_
Efficiency vs Load Over Vin _Eff_Aft192h_
0
10
20
30
40
50
60
70
80
90
100
0 0,5 1 1,5 2 2,5
Load Current [A]
Eff
icie
nc
y [
%]
Eff@4,0V
Eff@4,1V
Eff@4,3V
Eff@4,5V
Eff@5,0V
Eff@9,0V
Eff@12,0V
Eff@15,0V
Eff@18,0V
Eff@24,0V
Eff@30,0V
Eff@36,0V
GOC0140 _Eff_Aft192h_
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PCB Demo 6 v1 – Lebensdauertests – HTHH (High Temperature High Humidity)
2 Eingebettete Drosseln 96h Induktivität nimmt leicht ab
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GaNonCMOS – PCB Demos
0,6
0,8
1,0
1,2
1,4
1,6
1,8
2,0
0 2 4 6
Ind
ucta
nce [u
H]
current [A]
1MHz
1MHz 96hrs
0,6
0,8
1,0
1,2
1,4
1,6
1,8
2,0
0 2 4 6
Ind
ucta
nce [u
H]
current [A]
5MHz
5MHz 96hrs
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PCB Demo 6 v1 – Lebensdauer tests – TC (Temperature Cycling)
■ 300 Zyklen -40C/85C, biased, 4 samples (25 days), keine Ausfälle
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GaNonCMOS – PCB Demos
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Vollautamitisierte Charakterisierung der Induktivität
■ Impedance analyzer (messt bis 500MHz)
■ Mit Bias
■ Mehrere Samples werden multiplexed
■ Messsoftware und Hardware wurde selbst entwickelt
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GaNonCMOS – PCB Demos
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PCB Demo 6 v2 – inductance of the embedded inductor in temperature
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GaNonCMOS – PCB Demos
-
0,50
1,00
1,50
2,00
2,50
-55 -45 -35 -25 -15 -5 5 15 25 35 45 55 65 75 85 95 105 115 125 135
Ind
ucta
nce [u
H]
Temperature [deg C]
Y2 1.01 1GAP 1MHz temperature
0A
0.25A
0.5A
1A
2A
3A
0,40
0,45
0,50
0,55
0,60
-55 -45 -35 -25 -15 -5 5 15 25 35 45 55 65 75 85 95 105 115 125 135
Ind
ucta
nce [u
H]
Temperature [deg C]
Y2 1.01 3GAP 1MHz temperature
0A
0.25A
0.5A
1A
2A
3A
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Isolierter demonstrator
■ 5V auf 5V demonstrator
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GaNonCMOS – PCB Demos
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PCB Demo 4 Magnetic on Silicon Gate Drive Transformer
12V to 1.5V LLC converter
10MHz Schaltfrequenz(100MHz ist unrealistisch)
resonant tank Drossel and Trafo (Tyndall) und Treiber (IHP) – gebondet aufs PCB
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GaNonCMOS – PCB Demos
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CHIP Demo 1 (start der ersten Prototypenfertigung)
■ 12V to LV (e.g.1V) single phase buck
■ Trial of direct wafer bonding EpiGaN wafer with IAF d-HEMT on to a silicon wafer with IHP driver
■ GaN and Si Wafers are designed to match
■ Placed on the PCB with embedded inductor
■ Allows high speed switching and further miniaturization – chip power modules
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GaNonCMOS – CHIP Demo
PCBL
IHP Dr_v4/Ctrl_v3
IAF GaN
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Zukünftige Anforderungen an passive Bauelemente bei WBG Anwendungen
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• Höhere Frequenzen
• Höhere Temperaturen
• Kleinere Bauformen
• Höhere Leistungsdichte (Integration)…
• Robust gegen schnelle
Spannungsänderungen (dv/dt)
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Zukünftige Anforderungen an passive Bauelemente bei WBG Anwendungen
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Da wäre noch eine Sache….
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Zukünftige Anforderungen an passive Bauelemente bei WBG Anwendungen
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Integration bedeutet oft reduzierung des
Verschmutzungsgrades
IP6x bzw Vollverguss wird angewandt