UST_CeBIT_2014
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Transcript of UST_CeBIT_2014
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Hardware-software complex for quality control of LEDs according
to thermal characteristics
CeBIT-2014
KOTELNICOV INSTITUTE of Radio Engineering and Electronics
of the Russian Academy of Sciences
(Ulyanovsk Branch)
Unique Systems
and Technologies
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Typical construction of semiconductor devices on the radiator
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Thermal model of semiconductor devices
Figure 2. Simple model of a real
physical structure Figure 3. Foster (a.) and Cauer (b.)
type representation of physical
structures with finite time constants
a.)
b.)
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Standard methods
of thermal resistance measurement
Method on Russian Standard
Method on EIA/JEDEC Standard
Method on NIST Standard (US)
Method on MIL Standard (US)
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Fundamental documents
The following documents are recommended reading for reference and test method standard description purposes:
Mil Std 883C Method 1012.1 Thermal Characteristics of Microelectronic Devices
SEMI Test Method #G43-87 Test Method, Junction-to-Case Thermal Resistance Measurements of Molded Plastic Packages
SEMI Test Method #G38-87 Still and Forced Air Junction-to-Ambient Thermal Resistance Measurements of Integrated Circuit Packages
SEMI Test Method #G42-88 Specification, Thermal Test Board Standardization for Measuring Junction-to-Ambient Thermal Resistance of Semiconductor Packages
SEMI Test Method #G30-88 Junction-to-Case Thermal Resistance Measurements of Ceramic Packages
SEMI Test Method #G32-86 SEMI Guideline for Unencapsulated Thermal Test Chip
SEMI Test Method #G46-88 Thermal Transient Testing for Die Attachment Evaluation of Integrated Circuits
EIA JEDEC EB-20 Accepted Practices for Making Microelectronic Device Thermal Characteristics Test
NIST Special Publication 400-86 Semiconductor Measurement Technology: Thermal Resistance Measurements
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Diagrams, described the method
of JEDEC Standard 51-1
Time
Time
VH
0
IH
0
VFD
V
I
t0 t1 t2 t3
EIA/JEDEC Standard No. 51-1
Page 10
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Thermal transient tester T3Ster
(Analog, produced by MicRed Co, cost about $100 000)
An automated photometric/radiometric measurement setup with a Peltier-cooled
LED fixture, used in connection with the T3Ster thermal transient tester
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Heating curve of LED in logarithmic scale
Simulated thermal impedance plots at the three junctions
of the LED module in still air, green LED driven
Step responses
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Device for measuring thermal impedance
of light emitting diodes LED-meter
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Functional scheme of LED meter
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Principal of thermal impedance determination
Thermal impedance is based on transmitting the electric pulse through the light emitting diode with the pulse-duration that is modulated according to harmonic law, and measuring the corresponding changes of the heterojunction temperature relative to the case or ambient.
On the basis of calculating the magnitude and phases of the first harmonics of heating power and temperature of heterojunction the module of thermal impedance is determined, as well as the phases shift between the temperature and the heating power.
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Principal of thermal impedance determination
Thermal impedance is based on transmitting the electric pulse through the light emitting diode with the pulse-duration that is modulated according to harmonic law, and measuring the corresponding changes of the heterojunction temperature relative to the case or ambient.
On the basis of calculating the magnitude and phases of the first harmonics
of heating power and temperature of heterojunction the module of thermal
impedance is determined, as well as the phases shift between the temperature
and the heating power.
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Diagrams of measurement signals
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Features
The measurement of module and phase of the thermal impedance with different heating currents and frequencies of switching the heating power.
The measurement of thermal resistance of all the links of the thermal path of light emitting diodes: heterojunction – heat sink – circuit plate (soldering point) – radiator – ambient. This provides an opportunity to design lighting products with the most effective heat sink.
The measurement of overheating temperature of the crystal relative to the ambience medium.
The presentation of the measurement results in the form convenient for analysis and saving the results in the computer memory.
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Computer interface of LED meter
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Technical characteristics
Range of thermal impedance – from 0,1 up to 1000 K/W
Magnitude of the heating impulses of current – from 10 mA up to 1100 mA
Frequency of switching the heating power – from 0,001 Hz up to 800 Hz
Measurement error of thermal impedance – 2%
Power supply 220 V through the adaptor with output voltage +48 V
Wattage – less than 20 W
The overall device size –190x140x40 cm
The weight together with adapter – 0,6 kg
Technical specification and User's Guide: http://ctt.ulstu.ru/cebit_2014/ust-control_LEDs.pdf
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Electrothermal model of structure
of a heterojunction light-emitting diode
Model
The equations of an electrothermal feedback:
Restrictive condition:
Structure
z
x
y
q(T, J)
Lx
Ly
0
Lz1
Lz2
heat sources
heterostructure
[InGaN/GaN]
substrate
[Al2O3]
heat sink
electric
power
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Solution and calculated results
0.05 0.1 0.15 0.2 0.25 0.3 4
6
8
10
1 - = 0;
2
- = ( J,T);
3 - = ( T);
4
- = ( J);
5 - = const;
1
2
3
4
5
J, А/мм2
0 I, mA
RTj-c, К/W
100 200 300 400 500 600
3
4
6
5
7
Current dependences of thermal
resistance of power LED
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Customers, partners and awards
The device was ordered by:
Concern JENOPTIC (Germany);
JSC Svyaz Engineering (Moscow);
Institute of Physics and Technology of RAS (Saint-Petersburg);
Research Institute of Semiconductors (Tomsk);
Moscow State University, Faculty of Physic; Ulyanovsk State Technical University
AWARDS:
Gold Medal at the International Exhibition 2012, IENA
DIPLOMA at the at the International Exhibition 2012, Moscow
Grant 2012 START Program
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Awards on international exhibitions
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Contacts
Small Innovative Enterprise
“Unique Systems and Technologies”
Mr. Vyacheslav Sergeev,
E-mail: [email protected]
Ulyanovsk Centre for Technologies Transfer
Phone, fax: (8422) 77-81-92
E-mail: [email protected], http://ctt.ulstu.ru
32, Severny Venets st., Ulyanovsk, Russia,
432027.