Typical Transimpedance-limiting amplifier...
Transcript of Typical Transimpedance-limiting amplifier...
Jose Silva-Martinez
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Typical Transimpedance-limiting amplifier
interfaces
Many circuits are discussed in Razavi’s textbook “ Design of
Integrated Circuits for Optical Communications”; check it for detailed
discussions
Use previously discussed techniques for analyzing frequency
limitations, power consumption and noise floor
Peaking techniques may help, but pay special attention to group
delay!
Power consumption is a major issue, even if dynamic circuits are
used!
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Typical Transimpedance-limiting interface
Iin {0.1-50 mA}; RF {0.5-1 kΩ}
Limited TIA bandwidth smoothes the input current Iin and hence V1
Small signal at the output of TIA
4-5 stages with voltage gain of 4-8 dB/stage is required
Offset voltages are accumulated offset canceller is required
Gain/stage is not well controlled under PVT variations AGC system
Vb
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Transimpedance amplifier based on Resistive Feedback
Stability could be an issue
3 poles in a loop!
Poles are not far from each other
Rf is usually in the range of 500-1kΩ
Does this help?
If so, trade-offs?
Always advisable?
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Transimpedance amplifier based on Resistive
Feedback
Interesting output stage!
RE1<<RF
Ve3~ IinRF
Additional gain due to R2?
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Transimpedance amplifier based on Resistive Feedback
Option II
Peaking network can be a simple capacitor
Double check amplifier’s group delay
Pole-zero matching is an issue: Significant ripple may result
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Transimpedance amplifier based on Resistive Feedback
Option II + single-differential output stage
Single-ended output at R6
Fully-differential at nodes A and B
Why source degeneration?
Why R6 is split in two pieces?
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Transimpedance amplifier based on Resistive Feedback
With adjustable feedback resistor and DC control
R1C1 are a low-frequency filter to extract the DC value (offset) of Vout; it can be compared with a reference (not shown) to have better control.
You may want to use a power detector and control the gain
M3 and M4 provides a DC feedback
Base current of Q1 can be provided by M2 to minimize VRF
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Cherry-Hooper amplifier
Fully differential amplifier
First topology requires a CMFB
2nd topology does not require CMFB but it is not isolated from VDD!•Voltage headroom forces us to reduce RD•Trade-off with voltage gain of M3
Stability issues for very HF applications (to be discussed in class)
power consumption could be an issue
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Cherry-Hooper amplifier
Fully differential amplifier
First topology does not require CMFB
2nd topology requires CMFB!
Noise and stability are always relevant issues
Again: two poles in a loop!
Stability issues for very HF applications; power consumption
Small
signal
swing
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Modified Cherry-Hooper amplifier having
low-output impedance and current re-use
Gain is still dominated by
gm1RF
Output impedance is
dominated by re3!
Bias current of Q1 is re-used by
Q3 to provide low output
impedance
Nice topology but may require
excessive voltage headroom
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Amplifiers using CMOS Transistors!
Inductive peaking increases frequency response but please evaluate group delay ripple!
Expensive solution in terms of silicon area
Lp may extend amplifier’s bandwidth by 70-80 %
Lp provides partial rejection to HF supply noise: better HF PSRR
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Amplifiers using CMOS transistors!
Limiting amplifier consists of several stages in cascade
Frequency response is limited by parasitic capacitors
-3dB frequency reduces inversely proportional to the number of stages!
The capacitive loaded source follower generate a “negative capacitor” introducing HF zero-pole that may help
Drawback: complexity and power (current-mode circuit)
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LF Voltage gain=Gm1*RF
Be careful with the bias network: voltage drop through RF
Midterm question: What about noise due to M2?
Pay attention to the parasitic nodes and parasitic capacitors
Double check loop stability
CMOS Amplifiers: Cherry-Hooper
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Integrator
Transimpedance Amplifier
Transimpedance Amplifier
composed by M1, M2, R2 and RF
M4 provides extra gain control
M3 is the typical source follower
R3, C2 and A1 operates as an
integrator that control M4
•Effect on M4 resistance?
•Effect of R1?
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The parasitic pole at the output determines the – 3dB freq=1/R1C1
Output voltage is late by approximately 0.69*R1C1 seconds if your
input signal is a sharp pulse
Delay is within 0.69*R1C1 and R1C1 secs depending on the type of
input signal
The issue of group delay and parasitic poles
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As previously discussed you can use pole-
zero pairs to optimize bandwidth
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Using active inductors to optimize amplifier’s
bandwidth
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“Active inductor”
In practice: Zero-Pole pair; noise & Power
Using active inductors to optimize to
optimize amplifier’s bandwidth
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Comparison of amplifier’s bandwidth and noise
ISCAS-99
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Single-ended circuits have poor PSR and generate significant
amount of power noise.
Minimize these effects by reducing the bond-wire inductor.
Main frequency component is determined by rate speed
Practical issues: On-chip VDD is not a true VDD
Nice interpolating circuit; used in many applications as
frequency multiplier
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Single-ended circuits have poor PSR and generate significant amount
of power noise. Minimize these effect by reducing the bond-wire
inductor.
Positive feedback!VDD, VSS, GND are not ideal (zero impedance) terminals! You always
have resistors, capacitors and inductors everywhere!
Practical issues: On-chip GND is not a real GND
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Significant portion of the glitches
are due to the gate switching,
CGD and CGS!
Errors are again reduced by
symmetry!
IB-icIc’
~ IB+Ic’-Ic
icIc’
VP VQ
M1-off
M2-on
M1-on
M2-off
Ic and Ic’ currents
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Fully Differential circuits have better PSR and generate (much) less
amount of power noise.
Minimize these effect by improving your layout.
Current-mode logic is clean but…power hungry!
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Practical issues: Packaged chips is another issue!
Hard to manage (transmission line) without decent
impedance matching!
Power hungry and noisy guys!
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Practical issues: Far-End crosstalk is an issue as
well
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Low-Voltage, Low-Power Circuits for
Data Communication Systems
Analog/Mixed Signal Center
Texas A&M University, EE Dept.
College Station, TX, 77843, USA
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Motivation
LVDS drivers and receivers: Consume more than 30% of the chip’s total
power consumption!
Different supply voltages for core and I/O;
Low-voltage LVDS drivers low-power consumption; Reduced EMI
and cost; Simplified circuit and PCB design, etc.
TL
R
X M
U
X
1
n
16
....
....
....
T
XD
M
U
X
1
n
16
............
10Gb/s
625Mb/s
............
............
10Gb/s
Chip I Chip II
core coreI/O I/O
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mV50Differential load,
Rload
=1001%
Change in VOD
between “0”
and “1”|VOD|
%10RO
mismatchRO
ps40010020%-80% rise and fall timestR, tF
mV50Differential load,
Rload
=1001%
Change in VOS
between “0”
and “1”|VOS|
14040Output impedance, single
endedRO
mV13751125Differential load,
Rload
=1001%Output offset voltagesVOS
mV400250Differential load,
Rload
=1001%Output differential voltages|VOD|
UnitsMaxMinConditionsParameterSymbol
Standards: IEEE Draft P802.3ae/D5.0; IEEE Std 1596.3-1996.
LVDS Standards and Driver Specifications
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Example: VDD=1.6V, Vocm=1.25V, |Vo|=0.16—Vop/Von,max=1.41V;
Only 190mV for PMOS current source and PMOS switches!
Design challenges—Not enough headroom in VDD direction!
Typical LVDS Driver and the Design Challenges
for Low-Voltage Supplies
D
DD
D
ocmV
opV onV
bI
bI
biasV
cmfbV
D
D
D
DM1 M2
M3M4
M5
M6bI
onVopV ocmV
GND
VDD
1.25V1.41V
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Principle: Remove the top PMOS switches; Use two current sources.
Advantages: Simple; Fast.
Disadvantage: Double static current consumption!
Double Current Sources (DCS) LVDS
bI
bI2
D D
ocmV
bI
opV onV ocmV
biasV
cmfbV
D D
opV onV
M1 M2
M3 M4
M5 2Ib
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Principle: Replace the constant current sources by switchable current
sources!
Advantages: Minimum Static current consumption!
? How to implement the switchable current sources ?
Switchable Current Sources (SCS) LVDS
Driver
D D
Switchable
Current
Source
Switchable
Current
Source
opVocmV
onV
bI
D D
Ib
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VON provides the desired voltage that produces ID=Ib;
? How to generate VON ?
? How to pull up/down Vgate quickly ?
SCS LVDS Driver: Concept
biasV
D D
ocmVopV
onV
D
DONV
DIM1 M2
M3 M4
M5
Switchable
Current Sources
S1
S2
gateV
Ib
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Current mirror is used to produce VON and ID;
Active pull-up/down circuits provide “coarse” control over Vgate;
Buffer Buf-A isolates DC VON from the switches; “Fine” control;
Amplifier amp fixes the drain voltage.
SCS LVDS Driver with Active Pull Up/Down
refDV _
ONVM6
M7
refI
Switchable Current Source
Control Module
Amp
cmfbV
D D
CM
FB
ocmVopV
onV
DIM1 M2
M3 M4
M5
Switchable
Current Sources
refocmV _
SCS LVDS Driver Core
D
DBuf-A
S1
S2
Pull
Up/
Down
Pull
Up/
Down
gateV
D D
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SCS LVDS Driver with Passive Pull Up/Down
refDV _
ONVM6
M7
refI
Switchable Current Source
Control Module
Amp
cmfbV
D D
CM
FB
ocmVopV
onVD D
ppC ppCDIM1 M2
M3 M4
M5
Switchable
Current Sources
refocmV _
SCS LVDS Driver Core
D
DBuf-A
S1
S2
gateV
VDD
ppC
gsC
Data
GND
VDD
VON
VOFF
Data
Vgate
gateV
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LVDS Driver Simulation Configuration
Iout
LVDS
Driver
RT-T
D
D
RT-R
OV
OV
VssCload
Model of the
Load (ESD,
bonding wire,
and package)
iV
iV
oV
oV
VSS
VSS
VSS
VSS
VD
D
ESDBonding
wire Package (3 sections)
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tt (Vdd=1.8V, temp=27o), data rate=1.25Gb/s, pattern=101010
DCS LVDS Driver Simulation Results
Vocm 200mV
Vod 312mV
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tt (Vdd=1.8V, temp=27o), data rate=625Mb/s, pattern=101010
SCS LVDS Driver Simulation Results
ONV
D
opVD
ppCDIM1
M3
Switchable
Current Sources
D
DBuf-A
S1
S2
gateV
VDD
ppC
gsC
Data
GND
VDD
VON
VOFF
Data
Vgate
gateV
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tt (Vdd=1.8V, temp=27o), data rate=625Mb/s, pattern=101010
SCS LVDS Driver Simulation Results
Vocm 50mV
Vod 312mV
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LVDS Driver Chip Micrograph
SCS
LVDS
Driver
DCS
LVDS
Driver
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DCS LVDS driver eye diagram (data rate = 680Mb/s)
DCS LVDS Driver Experimental Results200m
V/d
iv
500ps/div trise300ps
Vod
3
20
mV
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DCS LVDS driver eye diagram (data rate = 1.0Gb/s)
DCS LVDS Driver Experimental Results200m
V/d
iv
200ps/div trise300ps
Vod
3
20
mV
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DCS LVDS driver eye diagram (data rate = 680Mb/s)
SCS LVDS Driver Experimental Results2
00m
V/d
iv
500ps/div trise300ps
Vod
3
20
mV
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DCS LVDS driver eye diagram (data rate = 1.0Gb/s)
SCS LVDS Driver Experimental Results200m
V/d
iv
200ps/div trise380ps
Vod
3
20
mV
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Comparison Among the DCS and SCS
Experimental Results
DCS is faster than SCS: The maximum data rates that DCS and SCS
can operate are 1.4Gb/s and 1.2Gb/s respectively;
Compared to DCS, SCS eye diagrams present larger jitter and
narrower open eyes, mainly due to:
Finite rising and falling time of the gate voltage and drain current;
SCS drain current presents small variations;
SCS presents larger charge injection effects.
SCS is more power efficient than DCS: At 625Mb/s, the current
consumption is 8.4mA and 12.8mA for SCS and DCS, respectively.
DCS consumes 52% more current;
Both DCS and SCS work great for 10Gb/s tranceivers and are
compliant to the standards!
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Comparison of Several LVDS Drivers
Boni Jamasb DCS SCS
Technology0.35mm
CMOS
0.18mm
CMOS
0.35mm
CMOS
0.35mm
CMOS
Output Voltage Swing (mV) 412 200 320 320
Static Power Consumption (mW) 43 23 23 12.8
Maximum Data Rate (Mb/s) 1200 622 1400 1200
Supply Voltage (V) 3.3 1.8 1.8 1.8
With same signal swing, SCS LVDS driver reduces the power
consumption by 60% compared to the previously reported realizations!
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Two low-voltage, low-power ICs have been designed, fabricated, and
tested;
The linear phase filter achieves a large linear signal swing because of
the optimal design of the OTA and the novel CM control;
The filter’s power efficiency is around 31%, which is much better than
the previous realizations (less than 10%);
Both DCS and SCS LVDS are suitable for low-voltage applications
because of the novel structures.
SCS LVDS driver achieves both low-voltage operation and low-power
consumption; It reduces the power consumption by 60% and it is
compliant to the standards.
Conclusions