TRANSFORMING THE WORLD - GaN Systems · Global company with decades of experience in GaN ... Power...
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1 TRANSFORMING THE WORLD WITH SMALLER, LOWER COST, MORE EFFICIENT POWER ELECTRONICS Power Systems Design Get Going with GaN
Transcript of TRANSFORMING THE WORLD - GaN Systems · Global company with decades of experience in GaN ... Power...
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TRANSFORMINGTHE WORLDWITH SMALLER, LOWER COST, MORE EFFICIENT POWER ELECTRONICS
Power Systems DesignGet Going with GaN
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Market leader for GaN power transistors• GaN-on-Silicon transistors for the power conversion market• Industry’s most extensive & highest-performance products
- Enhancement mode devices- 100V & 650V devices; industry-best performance
Global company with decades of experience in GaN• Parts shipping overnight from Mouser since 2014• World-class fabless manufacturing and advanced packaging• HQ and R&D in Ottawa, Canada• Sales & App. Eng. in Germany, Japan, China, Taiwan, Korea, USA
GaN Systems company overview
CANADA SILICON VALLEY DETROIT
GERMANY TAIWAN CHINA
KOREA JAPAN
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Why GaN ?
• Smaller size 2x to 10x
• Lighter weight 2x to 8x
• Lower power loss 2x to 6x
• BoM cost reduction 10% to 20%
• System cost reduction 10% to 30%
You know the benefits. Is it difficult? How is it done?
Power Supply with Silicon Power Supply with GaN
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Designing with GaN is straight-forward
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• GaN is a super-fast FET- It’s not difficult- It’s not new
• Similarities to a Silicon MOSFET- True enhancement-mode, normally off- Voltage driven: driver charges/discharges CISS- Supply Gate leakage IGSS only- Easy slew rate control by RG- Easily driven by Si gate driver chip
• Differences- Much Lower QG: lower drive loss; faster switching- Higher gain and lower VGS: +5 or +6V gate bias to turn on- Lower VG(th): +1.5V
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How to get the most advantage for your systemHigher frequency Best componentsBest topologies
Bridgeless Totem Pole
T-type traction inverter
Magnetics get smaller … capacitors too
EMI filtering reduced
Smaller size Even better performanceBetter performance
VAC
L1
Q1
Q2
D1
D2
CB RL
More efficient, Lower cost Simpler, part count reduced 33%
S21 S31 S11
S41
S22 S32
S23 S33
S12
S42
S13
S43
+
-
+
- GaN
IGBTs and anti-diodes
Time/uSecs 20nSecs/div
3.02 3.04 3.06 3.08 3.1 3.12 3.14 3.16 3.18 3.2
Vds
_Si /
V
-0
100
200
300
400
500
GD
S
Ls = ~10-15nH
SiGaN
Ls = <0.2 nH
100 kHz7 W/in3
500 kHz30 W/in3 4x smaller
Resulting in power systems that are …
Gate Driver
Maximize performance with gate driver that has high CMTI, high dV/dt immunity
Magnetics
Perf
orm
ance
Fac
tor
Fsw (MHz)
Select magnetics with low AC core-loss to minimize power loss
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• Layout• Gate Driver• Paralleling• Thermals• EMI• Dynamic Rdson
How to get the info ?
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• Circuit design- Control noise coupling from
power to gate drive loop- Mitigate gate ringing/oscillations
• Minimizing parasitics- 5 step list including guidance on
loop inductance and loop capacitance
• Layout best practice- 5 key areas to maximize
performance
Layout, Parasitics, Thermals
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• Validated list of drivers and controllers
• Half bridge and Full Bridge• Design examples included
Drivers and Controllers
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EZDriveTM circuit• Use standard MOSFET controller with
integrated driver to drive GaN Systems’ transistors
• Low cost, easy way to implement a GaN driving circuit
• Adaptable to wide range of power levels, frequency, and LLC and PFC controllers
• The EZDrive circuit also provides design control for the optimization of efficiency and EMI
Option to eliminate external gate driver
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• Device-level simulation- LTspice and Pspice- Device characteristics (Qg,
Coss/Ciss, IV/CV curve, Eon/Eoff)- Simple system simulation - Capability to observe parasitic
effect on switching performance
• System-level simulation- PLECS- Simplify the switching transient- Observe converter operating
waveforms- Accommodate complicated
device-based, system-level simulation and analysis
Modeling GaN devices and circuits
Spice
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• Clear analysis presented at PCIM- Define what it is - How to test- Measure the loss- Quantify the impact
• Conclusion- Power loss due to dynamic Rds is
insignificant in total system power loss- Total system power loss: GaN
outperforms silicon by a wide margin
Dynamic Rds(on)
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Evaluation Kits and Reference Designs
1.5-2.5kW Half bridge power stageand universal motherboard
Full Bridge optimized for Class D Amplifier
2-7 kW Insulated Metal Substrate Configurable Full/Half Bridge
50W, 100W to 300W+ Wireless Power Transfer Power Amplifiers
Buck Converter with 5MHz GaN Driver
170W AC/DC PFC/LLC
3 kW bridgelesstotem pole PFC
14 kW Insulated Metal Substrate Reference Design
EZDrive™ Eval Kit
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• GaN is not difficult- Many similarities to MOSFET- Differences require attention
to detail but no new concepts
• Many resources available- Easy to find- Easy to use- GaN Systems applications
engineering team to help
GaN Design Center
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Join the wave - revolutionize your power electronics
Many Eval Kits & Reference DesignsBroadest line of Products
Half bridgepower stage
High powerParalleling
High densityPFC/LLC
650 V test kit 3 kW bridgelesstotem pole PFC
300 W wirelesspower transfer
650 V GaN
100 V GaN
Come see us at Stand 9-507 gansystems.com
North America • Europe • Asia
