600V GaN Power Transistor Available Features Current ... GaN Power Transistor Applications Power...
Transcript of 600V GaN Power Transistor Available Features Current ... GaN Power Transistor Applications Power...
600V GaN Power Transistor
ApplicationsPower Supply for Data Centers / Base Transceiver Stations
Automotive ( HEV / EV / PHEV ) etc.
FeaturesGaN Power Transistor (TO220 Package)
Normally-OffCurrent-Collapse-FreeZero Recovery
SampleAvailable
ID(Continuous) : 15ARDS(on) : 65mQg : 11nC
Maximum FieldStrength
1
On-resistance
(a.u.)
(a.u.)
Tjmax
Maximum Operating Frequency
Maximum Current
(a.u.)
(a.u.)
(a.u.)
- GaN is an excellent power device with high breakdown voltage and fast switching.- Meet increasing demand of energy saving and downsizing.
- GaN is an excellent power device with high breakdown voltage and fast switching.- Meet increasing demand of energy saving and downsizing.
Potential of GaN Material (vs. SiC and Si)
Substrates Used for GaN Transistors
On-sapphire
On-SiC
Relatively high cost (~600$@4inch) Poor thermal conductivity (0.35W/cm-K) Low-loss waveguide is available
On-Si
Extremely high cost (~5,000$@2inch) Good thermal conductivity (3.5W/cm-K) Semi-Insulating substrate is available
Low cost (~20$@6inch) Good thermal conductivity (1.5W/cm-K) Conductive substrate
Low-power MMICLNA, SW, Front-end
High-power Amp@Microwave
/Millimeter-wave
Switching PowerHigh-speed/Low-loss
GaN Epitaxial Growth Technique on Si Substrate
AlNAlGaN
Super-lattice Buffer
AlNGaN
CompressiveStrain
StrainRelaxation
GaN
Si(111) substrate
Lattice constant: Si>GaN>AlNThermal expansion coefficient: Si<GaN<AlN
MOCVD epitaxial structure
AlGaN/AlN initial layer GaN/AlN Super-lattice
6-inch epitaxy on Si
Mirror surface / Crack-free High mobility with good uniformity
Approaches for Normally-Off AlGaN/GaN HFETa-face FET (1) F-doped Gate (2) MIS-HFET (3) p-type Gate HFET
(GIT) (4)
Structure
Advantages Simple process Simple structure
Low leak current Controllability of
Vth
Low leak current Large Imax
Controllability of Vth
Good reliability confirmed
Challenges
Epitaxial Growth No polarization
induced charge Increase Imax
Stability of Doped Fluorine
Controllability of Vth
Stability of insulator/semiconductor interface
(3) S.Sugiura et al Phys Stat Solidi 5(2008) 1923.T.Imada et al Proc of IPEC 23C(2010),1027
(4)Y.Uemoto et al IEEE Trans Electron Dev, 54(2007) 3393.
(1) M.Kuroda et al IEEE Trans Electron Device,57(2010) 368.(2)Y.Cai et al IEEE Electron Dev Lett, 26(2005) 435.
Substrate
GaN
AlGaNS DG
Substrate
GaN
AlGaNS D
GInsulator
Substrate
GaN
AlGaNS DG
F-plasma treatment
Substrate
GaN
AlGaNS D
G
P-AlGaN
(e.g. a-GaN/r-sapphire)
Gate Injection Transistor (GIT)
Normally-Off Operationp-AlGaN lifts up the potentialat the channel
Low on-resistanceHole injection from p-AlGaN to AlGaN/GaN channelincreases the drain current using conductivity modulation
Gate
p-AlGaNi-AlGaN
i-GaN
Source Drain
mh << me
Schematic cross-section A New Normally-Off GaN Transistor - GIT -
I-V characteristics
Normally off
PanasonicGITNormally on
Conventional GaN-FET
Large drain current
0.0
0.2
0.4
0.6
0.8
1.0
-4 -2 0 2 4 6Gate Voltage (V)
Dra
in C
urre
nt(a
.u.)
GIT Operation
p‐AlGaNi‐AlGaN
i‐GaN
GateSourceDrain
- - --
No current flows
- - ---
off
p‐AlGaNi‐AlGaN
i-GaN
- - - - - - - - - -
GateSourceDrain
mh<< me
- - -
Large drain current
-- -- -- -- -
++
+ + +-
on
Vg = 0V p-gate potential depletes the
channel under the gate↓
No drain current
Vg > Vf of GaN-PN junctionHole injection
↓Electron generation
↓Large drain current
(conductivity modulation)
Reverse I-V Characteristics
No voltage-offset at the Vgs of 5V (FET mode) GIT can be operated as if a diode at the Vgs of 0V
(Reverse-conduction mode)
-400
-300
-200
-100
0
100
200
300
400
-10 -8 -6 -4 -2 0 2 4 6 8 10
Vds (V)
()
Vgs=5V
4V
3V
2V
1V, 0Vstep=+1V
FET mode
ReverseConduction
Mode
Vds (V)
Ids
(mA
/mm
)
Vgs=0V
Vgs=5V
On-state I-V Characteristics
Vgs=5V
Current-Collapse-FreeNo destruction and degradation was not observed up to 600V.
0
2
4
6
8
10
300 400 500 600 700
Drain-Source Voltage (V)
On-
resi
stan
ce (a
.u.)
Measured under the condition of practical use
Low On-Resistance
High FrequencyOperation
-Low on-resistance realizes high efficiency power supplies.-High frequency operation realizes compact power supplies.-Low on-resistance realizes high efficiency power supplies.-High frequency operation realizes compact power supplies.
CurrentAC-DC( Si )
HighEfficiencyAC-DC( GaN )
CompactAC-DC( GaN )
Half Loss
Hal
f Siz
e
Efficiency
Siz
e
100% 50%
100%
50%
Power Supply Innovation
Conclusion
GaN Predominance- Normally-Off- Current-Collapse-Free- Zero Recovery
Applications- Power Supply for
Data Centers and Base Transceiver Stations- Automotive (HEV / EV / PHEV) etc.
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