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TowerJazz High Performance SiGe BiCMOS processes

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22Comprehensive Technology PortfolioMixed-SignalDigital CMOS0.35m0.50mBiCMOS, SiGePower/BCDBCD RFCMOSRFCMOS and SOI CMOSBCDRFCMOS and SOI CMOSPower/BCD 0.13mSiGeSiGeSiGe0.25m0.18/0.16/0.152m0.13mMixed-SignalDigital CMOSMixed-SignalDigital CMOSMixed-SignalDigital CMOSMixed-SignalDigital CMOSeNVMImage Sensor(X-Ray & Visible)Image Sensor(X-Ray & Visible)eNVMImage Sensor(X-Ray & Visible)RFCMOS and SOI CMOS33

RF CMOS and SiGe BiCMOS Cell Phone, WiFi TxRx Basestation, Specialty Wireless TV, Satellite, STB TunersHigh Performance SiGeOptical Fiber NetworksAutomotive Radar60 GHz WiFi, 24GHz Backhaul Light Peak and ThunderboltGPS LNASOI Switch and SiGe Power AmplifiersPower AmplifiersAntenna SwitchPA ControllersComplementary BiCMOSLine Drivers DSL, HomePlug, ATEHDD PreAmpDAC, ADCRF and HPA Applications and Technology4Best-in-class SiGe, RF CMOS, RF models and Design EnablementRF and TunersFront-End ModulesmmWaveHigh Performance Analog

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RF CMOS Controller Platform 5V, 0.18um optimized CMOS Up to 50% die size shrink vs. 0.25um 1.8V Logic, Bipolar, LDMOS optionsSiGe PA, through-silicon-via (TSV), IPDSiGe PA cells for WiFi and CellularTSV for low-inductance ground1.8/3.3/5V CMOS, high res optionsIPD (5um dual-Cu in development)

Platform for integration of FEMThin-Film SOI (best in class Ron-Coff)Thick-Film SOI for ease of integration5V control, LNA, PA/Driver optionsModels, design tools and IPExample: PA Design Library (PADL)Example: 4T, 6T, 9T SOI Switch IPAnalog / RF Design ServicesFront-End Module Technology5Best-in-class SiGe, RF CMOS, RF models and Design EnablementControllerSOI SwitchPower AmplifierDesign Services and IP55Schematic of Key Features in SiGe BiCMOS platform The SiGe HBJTs are embedded into complimentary BiCMOS platforms offering high performance RF , analog and digital performances.

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6SiGe HBJT device structure7The high-performance bipolar transistors are built vertically meaning that the n-p-n structure is created perpendicularly from the top of the wafer down.

7TowerJazz High Speed SiGe Processes8SBC18HASBC18H2SBC18H3SBC13HASBC13H3StatusProd.Prod.Proto.Proto.Devel.CMOSVoltages1.8/3.3V1.8/3.3V1.8/3.3V1.2/3.3V1.2/3.3VHS BipolarFT (GHz)150200240200240FMAX (GHz)190200270200270BVCEO (V)2.21.91.61.91.6CapacitorfF/m22.8/5.62/42.8/5.62.8/5.62.8/5.6VaractorQ at 20 GHz10NA15NA15LPNPBeta32730730 There are numerous other SBC18 flavors in production with variations in back end configuration, selection of available devices etc.Presented data mainly from the SBC18H2/H3 flavors.8SiGe HBJTs current and power gain240 GHz Ft / 270 GHz Fmax devices in mass production.High frequency performances sustained for wide collector current range.9

9SiGe HBJTs gain vs DC power densityTowerJazz Devices are optimized for low power consumption.10

10SiGe HBJTs Noise11

SBC18H4 minimum noise figure at 20Ghz is measured less than 1dB and at 40GHz at only 2dB.NFMIN is flat across various frequency ranges.11Circuit examples at ~100GHz: LNAs12

SBC18H3SBC18H2SBC18H3SBC18H2 Broad band mm-wave LNAs fabricated in SBC18H2 and SBC18H3 4 identical LNAs built for a 4-channel W-band phased-array receiver Nearly 30dB of gain above noise floor at 85GHz Almost perfect matching between LNAs12RF Grounding:Deep Silicon Vias vs. Through Silicon Vias13 Deep Silicon Vias and Through Silicon Vias are available for enhanced RF grounding. Metal 1Backside MetallizationThrough-Silicon Vias~100umDeep Silicon Vias~10umMetal 1Backside Metallizationp++ handle waferp- Epiemittercollector~150um13Bipolar Roadmap14next generation (SBC18H4) is in final development stage ,Fmax=350Ghz , improved noise figure.SiGe NPN on thick film SOI under development.

14Summary15TowerJazz offer SiGe HBJT devices on 0.35m, 0.18m and 0.13m technology nodes.TowerJazz SiGe HBJT offers Best in class SiGe Speed / Power and Best in class Noise.The SiGe HBJTs are embedded into complimentary BiCMOS platforms offering high performance RF, analog and digital performances.www.towerjazz.com16Complete SBC18H3 Device Roster17FamilyDeviceCharacteristicsCMOS1.8V CMOSModel-exact copy of all other TJ 0.18um CMOS3.3V CMOSBipolarHS NPN240 GHz FT / 280 GHz FMAXSTD NPN55GHz FT / 3.2V BVCEOLPNPb=35ResistorsPoly235 W/sq and 1000 W/sqMetal25 W/sq TiN on M3CapacitorsSingle MIM2 or 2.8 fF/m2Stacked MIM4 or 5.6 fF/m2Varactors1.8V MOSQ @ 20GHz = 20Hyper-abrupt junctionQ @ 20GHz =15, Tuning Ratio = 21%RF Diodesp-i-nIsolation -3.5dB at 50GHzSchottkyFC > 800 GHz17SiGe HBJT basic layout-122 configuration18 AA, EPBPSCAREA2XNAAWNEWWN N+ for NsubWNN+ for NsubSTISTISC ImplantSiGe-Based layerEWEmitter PolyCollectorCollectorEmitterBaseBaseNative P-sub

WN N+ for NsubWNN+ for NsubSTISTISC ImplantSiGe-Based layerEWEmitter PolyCollectorCollectorEmitterBaseBaseNative P-sub