TowerJazz High Performance SiGe BiCMOS processes · TowerJazz SiGe HBJT offers Best in class SiGe...

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TowerJazz High Performance SiGe BiCMOS processes

Transcript of TowerJazz High Performance SiGe BiCMOS processes · TowerJazz SiGe HBJT offers Best in class SiGe...

Page 1: TowerJazz High Performance SiGe BiCMOS processes · TowerJazz SiGe HBJT offers Best in class SiGe Speed / Power and Best in class Noise. The SiGe HBJTs are embedded into complimentary

TowerJazz High Performance

SiGe BiCMOS processes

Page 2: TowerJazz High Performance SiGe BiCMOS processes · TowerJazz SiGe HBJT offers Best in class SiGe Speed / Power and Best in class Noise. The SiGe HBJTs are embedded into complimentary

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Page 3: TowerJazz High Performance SiGe BiCMOS processes · TowerJazz SiGe HBJT offers Best in class SiGe Speed / Power and Best in class Noise. The SiGe HBJTs are embedded into complimentary

Comprehensive Technology Portfolio

Mixed-Signal Digital CMOS

0.35 µm

0.50 µm

BiCMOS, SiGe

Power/BCD BCD

RFCMOS RFCMOS and SOI CMOS

BCD

RFCMOS and SOI CMOS

Power/BCD

0.13µm

SiGe SiGe SiGe

0.25 µm

0.18/0.16/0.152 µm

0.13 µm

Mixed-Signal Digital CMOS

Mixed-Signal Digital CMOS

Mixed-Signal Digital CMOS

Mixed-Signal Digital CMOS

eNVM

Image Sensor (X-Ray & Visible)

Image Sensor (X-Ray & Visible)

eNVM

Image Sensor (X-Ray & Visible)

RFCMOS and SOI CMOS

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Page 4: TowerJazz High Performance SiGe BiCMOS processes · TowerJazz SiGe HBJT offers Best in class SiGe Speed / Power and Best in class Noise. The SiGe HBJTs are embedded into complimentary

RF CMOS and SiGe BiCMOS

Cell Phone, WiFi TxRx Basestation, Specialty Wireless TV, Satellite, STB Tuners

High Performance SiGe

Optical Fiber Networks Automotive Radar 60 GHz WiFi, 24GHz Backhaul Light Peak and Thunderbolt GPS LNA

SOI Switch and SiGe Power Amplifiers

Power Amplifiers Antenna Switch PA Controllers

Complementary BiCMOS

Line Drivers DSL, HomePlug, ATE HDD PreAmp DAC, ADC

RF and HPA Applications and Technology

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Best-in-class SiGe, RF CMOS, RF models and Design Enablement

RF and Tuners Front-End Modules

mmWave High Performance Analog

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Page 5: TowerJazz High Performance SiGe BiCMOS processes · TowerJazz SiGe HBJT offers Best in class SiGe Speed / Power and Best in class Noise. The SiGe HBJTs are embedded into complimentary

RF CMOS Controller Platform

5V, 0.18um optimized CMOS Up to 50% die size shrink vs. 0.25um 1.8V Logic, Bipolar, LDMOS options

SiGe PA, through-silicon-via (TSV), IPD

SiGe PA cells for WiFi and Cellular TSV for low-inductance ground 1.8/3.3/5V CMOS, high res options IPD (5um dual-Cu in development)

Platform for integration of FEM

Thin-Film SOI (best in class Ron-Coff) Thick-Film SOI for ease of integration 5V control, LNA, PA/Driver options

Models, design tools and IP

Example: PA Design Library (PADL) Example: 4T, 6T, 9T SOI Switch IP Analog / RF Design Services

Front-End Module Technology

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Best-in-class SiGe, RF CMOS, RF models and Design Enablement

Controller SOI Switch

Power Amplifier Design Services and IP

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Page 6: TowerJazz High Performance SiGe BiCMOS processes · TowerJazz SiGe HBJT offers Best in class SiGe Speed / Power and Best in class Noise. The SiGe HBJTs are embedded into complimentary

Schematic of Key Features in SiGe BiCMOS platform

The SiGe HBJTs are embedded into complimentary

BiCMOS platforms offering high performance RF , analog

and digital performances.

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Page 7: TowerJazz High Performance SiGe BiCMOS processes · TowerJazz SiGe HBJT offers Best in class SiGe Speed / Power and Best in class Noise. The SiGe HBJTs are embedded into complimentary

SiGe HBJT device structure

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The high-performance bipolar transistors are built “vertically”

meaning that the n-p-n structure is created perpendicularly from

the top of the wafer down.

Page 8: TowerJazz High Performance SiGe BiCMOS processes · TowerJazz SiGe HBJT offers Best in class SiGe Speed / Power and Best in class Noise. The SiGe HBJTs are embedded into complimentary

TowerJazz High Speed SiGe Processes

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SBC18HA SBC18H2 SBC18H3 SBC13HA SBC13H3

Status Prod. Prod. Proto. Proto. Devel.

CMOS Voltages 1.8/3.3V 1.8/3.3V 1.8/3.3V 1.2/3.3V 1.2/3.3V

HS Bipolar

FT (GHz) 150 200 240 200 240

FMAX (GHz) 190 200 270 200 270

BVCEO (V) 2.2 1.9 1.6 1.9 1.6

Capacitor fF/µm2 2.8/5.6 2/4 2.8/5.6 2.8/5.6 2.8/5.6

Varactor Q at 20 GHz 10 NA 15 NA 15

LPNP Beta 32 7 30 7 30

There are numerous other SBC18 flavors in production with variations in back end configuration, selection of available devices etc. Presented data mainly from the SBC18H2/H3 flavors.

Page 9: TowerJazz High Performance SiGe BiCMOS processes · TowerJazz SiGe HBJT offers Best in class SiGe Speed / Power and Best in class Noise. The SiGe HBJTs are embedded into complimentary

SiGe HBJT’s current and power gain

240 GHz Ft / 270 GHz Fmax devices in mass production.

High frequency performances sustained for wide collector

current range.

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0.1 1 10

0

50

100

150

200

250

SBC18H2

SBC18H3

FP

EA

K

T (

GH

z)

JC (mA/µm

2)

VCB

= 0.5V

FMEAS

=20GHz

3µm Emitter 122 Device

0.1 1 10

0

50

100

150

200

250

300

SBC18H2

SBC18H3

FP

EA

K

MA

X (

GH

z)

JC (mA/µm

2)

VCB

= 0.5V

FMEAS

=20GHz

3µm Emitter 122 Device

Page 10: TowerJazz High Performance SiGe BiCMOS processes · TowerJazz SiGe HBJT offers Best in class SiGe Speed / Power and Best in class Noise. The SiGe HBJTs are embedded into complimentary

SiGe HBJT’s gain vs DC power density

TowerJazz Devices are optimized for low power consumption.

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0.1 1 10

5

10

15

20 SBC18H2

SBC18H3

70% Lower Power

UG a

t 2

8G

Hz (

dB

)

DC Power Density (mW/µm2)

0.1 1 10

0

5

10

15

20

SBC18H2

SBC18H3

h2

1 a

t 2

8G

Hz (

dB

)

DC Power Density (mW/µm2)

35% Lower Power

Page 11: TowerJazz High Performance SiGe BiCMOS processes · TowerJazz SiGe HBJT offers Best in class SiGe Speed / Power and Best in class Noise. The SiGe HBJTs are embedded into complimentary

SiGe HBJT’s Noise

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0 10 20 30 40 50 60 70 80 90 1000

1

2

3

4

5

6

7

8

9

10

SBC18H2

SBC18H3

NF

MIN

(d

B)

Frequency (GHz)

-1.3dB

0 2 4 6 8 10 12 14 16 18

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.13x20 µm Single Emitter, Dual Base, Dual Collector

40 GHz

32 GHz

20 GHz

NF

MIN

(d

B)

IC (mA)

8 GHz

SBC18H4 minimum noise figure at 20Ghz is measured

less than 1dB and at 40GHz at only 2dB.

NFMIN is flat across various frequency ranges.

Page 12: TowerJazz High Performance SiGe BiCMOS processes · TowerJazz SiGe HBJT offers Best in class SiGe Speed / Power and Best in class Noise. The SiGe HBJTs are embedded into complimentary

Circuit examples at ~100GHz: LNAs

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5

6

7

8

9

10

11

12

13

14

15

70 75 80 85 90 95 100 105 110

Me

asu

red

Re

ceiv

er

NF

(dB

)

Input RF Frequency (GHz)

Receiver NF - Element 1 (H3)Receiver NF - Element 2 (H3)Receiver NF - Element 3 (H3)Receiver NF - Element 4 (H3)Receiver NF - Element 1 (H2)Receiver NF - Element 2 (H2)Receiver NF - Element 3 (H2)Receiver NF - Element 4 (H2)

0

5

10

15

20

25

30

35

40

70 75 80 85 90 95 100 105 110

Me

asu

red

Re

ceiv

er

Ga

in (

dB

)

Input RF Frequency (GHz)

Receiver Gain - Element 1 (H3)Receiver Gain - Element 2 (H3)Receiver Gain - Element 3 (H3)Receiver Gain - Element 4 (H3)Receiver Gain - Element 1 (H2)Receiver Gain - Element 2 (H2)Receiver Gain - Element 3 (H2)Receiver Gain - Element 4 (H2)

SBC18H2

Broad band mm-wave LNAs fabricated in SBC18H2 and SBC18H3 4 identical LNAs built for a 4-channel W-band phased-array receiver Nearly 30dB of gain above noise floor at 85GHz Almost perfect matching between LNAs

Page 13: TowerJazz High Performance SiGe BiCMOS processes · TowerJazz SiGe HBJT offers Best in class SiGe Speed / Power and Best in class Noise. The SiGe HBJTs are embedded into complimentary

RF Grounding:

Deep Silicon Vias vs. Through Silicon Vias

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Deep Silicon Vias and Through Silicon Vias are available for enhanced RF grounding.

Metal 1

Backside Metallization

Through-Silicon Vias

~100um

Deep Silicon Vias

~10um

Metal 1

Backside Metallization

p++ handle wafer

p- Epi

emitter

collector

~15

0u

m

Page 14: TowerJazz High Performance SiGe BiCMOS processes · TowerJazz SiGe HBJT offers Best in class SiGe Speed / Power and Best in class Noise. The SiGe HBJTs are embedded into complimentary

Bipolar Roadmap

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next generation (SBC18H4) is in final development

stage ,Fmax=350Ghz , improved noise figure.

SiGe NPN on thick film SOI under development.

1 10

0

100

200

300

SBC18H2

SBC18H3

SBC18H4 (prototype)

FP

EA

K

MA

X (

GH

z)

JC (mA/µm

2)

VCB

= 0.5V

FMEAS

=20GHz

3µm Emitter 122 Device

0 10 20 30 40 50

0

1

2

3

4

5

SBC18H2

SBC18H3

SBC18H4 (Prototype)

NF

MIN

(d

B)

Frequency (GHz)

0.13x20um 122 Device

VBE

=0.825V

Page 15: TowerJazz High Performance SiGe BiCMOS processes · TowerJazz SiGe HBJT offers Best in class SiGe Speed / Power and Best in class Noise. The SiGe HBJTs are embedded into complimentary

Summary

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TowerJazz offer SiGe HBJT devices on 0.35µm, 0.18µm

and 0.13µm technology nodes.

TowerJazz SiGe HBJT offers Best in class SiGe Speed /

Power and Best in class Noise.

The SiGe HBJTs are embedded into complimentary

BiCMOS platforms offering high performance RF, analog

and digital performances.

Page 16: TowerJazz High Performance SiGe BiCMOS processes · TowerJazz SiGe HBJT offers Best in class SiGe Speed / Power and Best in class Noise. The SiGe HBJTs are embedded into complimentary

www.towerjazz.com

Page 17: TowerJazz High Performance SiGe BiCMOS processes · TowerJazz SiGe HBJT offers Best in class SiGe Speed / Power and Best in class Noise. The SiGe HBJTs are embedded into complimentary

Complete SBC18H3 Device Roster

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Family Device Characteristics

CMOS 1.8V CMOS Model-exact copy of all other TJ 0.18um CMOS

3.3V CMOS

Bipolar HS NPN 240 GHz FT / 280 GHz FMAX

STD NPN 55GHz FT / 3.2V BVCEO

LPNP b=35

Resistors Poly 235 W/sq and 1000 W/sq

Metal 25 W/sq TiN on M3

Capacitors Single MIM 2 or 2.8 fF/µm2

Stacked MIM 4 or 5.6 fF/µm2

Varactors 1.8V MOS Q @ 20GHz = 20

Hyper-abrupt junction Q @ 20GHz =15, Tuning Ratio = 21%

RF Diodes p-i-n Isolation <-15dB, Insertion loss > -3.5dB at 50GHz

Schottky FC > 800 GHz

Page 18: TowerJazz High Performance SiGe BiCMOS processes · TowerJazz SiGe HBJT offers Best in class SiGe Speed / Power and Best in class Noise. The SiGe HBJTs are embedded into complimentary

SiGe HBJT basic layout-122 configuration

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AA, EP

BP SC

AREA2

XN

AA

WN

EW

WN

N+ for Nsub

WN

N+ for Nsub STI STI

SC Implant

SiGe-Based layer

EW

Emitter Poly

Collector Collector Emitter Base Base

Native P-sub

WN

N+ for Nsub

WN

N+ for Nsub STI STI

SC Implant

SiGe-Based layer

EW

Emitter Poly

Collector Collector Emitter Base Base

Native P-sub