Thrmla Modling of Icpackages

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    Modeling IC Packages with FLOTHERM & FLOPACK

    Package Level Modeling Goals and Challenges

    Basic Packaging Concepts

    Package Characterization

    Introduction to FLOPACK

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    Modeling Goals

    Why is package level modeling necessary ? The only reliable way to obtain accurate case temperature

    The only reliable way of obtaining accurate junction temperature

    Junction temperature drives reliability; Case temperature provided to end-user

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    Modeling Challenges

    Keeping up with the rapidly changing field of ICpackaging is difficult, especially for systemdesigners (end-users).

    Some modeling assumptions are not obvious Do I model my trace layers in a PBGA discretely?

    Can I neglect the bond wires in modeling a PQFP?

    Can I represent my thermal vias as a lumped block?

    Generating component models is time consumingand tedious

    Information about the internal details of a packagemay be difficult to obtain

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    Basic Packaging Concepts

    What is an electronics package?

    The combination of engineering and manufacturingtechnologies required to convert an electronic circuitinto a manufactured assembly

    Martin Miller, Electronic Packaging, Microelectronicsand Interconnection Dictionary

    What is an electronics package? (Intelligibledefinition)

    An intermediary between the IC chip (die) and thePCB

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    Basic Packaging Concepts

    Highly multi-disciplinary field:

    Materials

    Manufacturing

    Thermal Electrical

    Functions of a package:

    Electrical

    Power distribution

    Interconnection

    Mechanical

    Die protection

    Thermal

    Heat dissipation

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    Basic Packaging Concepts

    DieDie enclosure

    Substrate

    Level 1 interconnect

    Level 2 interconnect

    PCB

    A package need not have all of the above elements

    The die, of course, is always present!

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    Basic Packaging Concepts

    More expensive

    More reliable

    Best electrical characteristics (fine

    line widths, multiple layers)

    Hermetic

    Excellent thermal performance

    Small number of packages in use

    Applications: High-power

    processors

    Generally, more challenging to

    modelCheaper

    Less reliable

    Non-hermetic

    Often need thermal enhancements

    Majority of the worlds packages

    Applications:ASICs, Logic

    chips, Memory chips, low power-

    processors

    Ceramic PackagesPlastic Packages

    Package Classifications:

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    Standard test methods defined by JEDEC areprovided as a basis for comparison betweenvarious packages and devices.

    Well defined environments are used to ensurereliability and consistency between vendors.

    The thermal resistance values are not meantto and will not predict the performance of a

    package in an application-specificenvironment.

    Package Characterization

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    Thermal Resistance of a Package:

    Defined as the resistance to heat transfer betweentwo specified points.

    Tj = temperature at active surface of die (junction)

    Tx = temperature at some reference point

    P = package power

    Package Characterization

    P

    TT xjjx

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    Package Characterization

    ja (Natural Convection)

    Most common concept

    Defined by JEDEC 51_2 :

    Ta = ambient temperature, taken inside aspecific enclosure defined by JEDEC (Still-AirTest)

    Measurements taken either with a High-k(2S2P) and Low-k (1S0P) board

    P

    TT ajja

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    Package Characterization

    jma (Forced Convection)

    Speeds from 0-1000 LFM

    Defined by JEDEC 51_6 :

    Ta = ambient temperature, taken upstream inthe wind tunnel

    Board orientation is an important factor

    P

    TT ajjma

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    jc (junction to case resistance) The thermal resistance from the junction to the outside

    surface of the package (case) closest to the chip mountingarea when that same surface is properly heat sunk so as tominimize temperature variation across that surface.

    Package Characterization

    Die

    Substrate

    PCB

    JunctionCase

    Ambient

    P

    TT cjjc

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    Thermal Resistance of a Package

    Package Characterization

    Convection/Radiation

    Convection/Radiation

    Conduction

    Convection

    Conduction

    Radiation

    Conduction

    Junction

    Case

    qjc

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    jb (junction to case resistance)

    The thermal resistance from the junction to theboard.

    Package Characterization

    P

    TT bjjb

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    Thermal Resistance of a Package jc tries to represent the many complex heat flow paths with a single thermal

    resistance

    Problem is most problematic with PBGAs

    Plastic Encapsulant exaggerates temperature gradient on surface

    Solder balls and vias increase parasitic losses to the board

    Package Characterization

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    Compact Models

    Generates Compact Models (Two-resistor and DELPHI)

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    SmartParts Available Today

    21 Package Families

    5 Ancillary Parts

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    Plastics/Resins Epoxy, FR-4, Polyimide, BT, die attach materials

    Metals/Alloys Copper, Solders (Pb/Sn alloys), Kovar, Alloy-42,

    Aluminum, Gold, Tungsten, etc.

    CeramicsAlumina (Al2O3), AlN, BeO

    Semiconductors Silicon, Gallium Arsenide (GaAs)

    Packaging Materials

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    Relevant properties of packaging materials:

    Conductivity - Usually invariant with temperature Exceptions :Silicon, AlN, BeO

    Glass transition temperature for organic materials

    (Tg) - Temperature above which material loses its laminatecharacteristics. Typical values: FR-4 = 125 C, BT = 200 C

    Coefficient of Thermal Expansion (CTE) - Must matchfor reliability. Particularly bad combinations: Si-FR4, Si-BT, Si-Cu. Goodcombinations: Cu-FR4, Si-Ceramics

    Specific Heat

    Density

    Packaging Materials

    Silicon die

    BT substrate

    Underfill

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    Interconnections

    Recall the basic structure of a package:

    Die level interconnections (Level 1) Wire Bonding, Tape Adhesive Bonding, Flip Chip

    Board level interconnections (Level 2) Pins, Peripheral Leads, Solder Balls

    DieDie enclosure

    Substrate

    Level 1 interconnect

    Level 2 interconnect

    PCB

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    Interconnections: Level 1

    Level 1 Interconnect is the coupling between thedie and the substrate

    Objective: to route signals and power to die whileminimizing electrical degradation

    Three types of Level 1 Interconnect:

    Wire Bonding

    Tape Adhesive Bonding (TAB)

    Flip-Chip (C4)

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    Interconnections: Level 1Wire Bonding

    Traditional technology

    Bond wires typically

    0.8 - 1.2 mil in diameter

    Gold or AluminumAdvantages:

    Mature, low cost technology

    Reliable

    Disadvantages: Peripheral, not area array; low I/O density

    Pitch on die limited to usually of 3 mils

    Large signal lengths; high self-inductance

    Substrate

    Die

    Bond Wire Pad

    on Substrate

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    Modeling Bond Wires Can be ignored in ceramic packages

    May be significant in plastic packages with low metal content

    Suggested modeling approach: Represent as cuboid with equivalent (volume averaged) orthotropic

    conductivity

    Interconnections: Level 1Wire Bonding

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    Technology introduced in the 1970s

    Popular in Japan, not much in the U.S.

    Leadframe is directly bonded to the I/O pads on dieperiphery, in a process known as Inner Lead Bonding

    Leadframe is normally attached to a (usuallypolyimide) tape, hence the name

    Interconnections: Level 1Tape Adhesive Bonding (TAB)

    Die

    Bumped die

    Polyimide Tape

    Cu leadframe

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    Disadvantages:

    More expensive today than wire-bonding

    Peripheral array, I/O density not high

    Advantages:

    Short interconnect length, excellent electricalperformance

    Can handle up to 2 mil pitch on die periphery

    Modeling:

    This interconnection can usually be ignored in CFDmodeling (insignificant thermal resistance)

    Interconnections: Level 1Tape Adhesive Bonding (TAB)

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    Interconnections: Level 1Flip-Chip Bonding

    Has its roots in an IBM technology of the 1960s (called C4)

    Did not become popular till late 1980s

    Die connected with substrate through solder balls Usually not in regular array

    Common solders: 37Pb/63Sn, 95Pb/5Sn

    Typical dia ~ 3 mils

    Die

    Substrate

    C4Underfill

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    Disadvantages:

    Can have major CTE mismatch problems

    Underfill makes rework practically impossible

    Higher cost (although this is dropping)

    Advantages: Best electrical performance of all methods

    Area array leads to highest I/O density

    Modeling: Usually have a small, but significant thermal resistance,

    especially for ceramic packages.

    Negligible spreading in Flip-chip layer

    Best modeled as collapsed cuboid with volume averagedconductivity

    Interconnections: Level 1Flip-Chip Bonding (C4)

    Collapsed Cuboid

    Die

    Substrate

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    Level 2 interconnect: coupling between thepackage substrate and PCB

    Can generally be classified by mechanical

    attachment method and I/O arrangement: Surface mount (SMT) : I/Os rest (usually soldered) onPCB surface.

    Through-hole(TH): I/O physically penetrate the PCBthrough holes

    Interconnections: Level 2

    Surface Mount/Peripheral leaded

    Through Hole/Area Array

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    Interconnections: Level 2

    Three ways of coupling substrate and board:

    Pins

    Peripheral leads

    Solder balls

    Interconnect method Mechanical I/O Arrangement

    Solder Balls

    Peripheral Leads

    Pins

    Surface Mount,

    Through Hole

    Surface Mount

    Through Hole

    Area Array

    Peripheral

    Area Array

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    These are most commonly surface mounted (exception,Dual In-line Package) in PQFPs, SOPs etc.

    Pitches have shrunk to as low as 16 mils (0.4 mm)

    I/O counts up to ~ 400

    Mature, low cost technology

    I/O limits due to peripheral array, co-planarity problems

    Leads typically of Copper (older packages, Alloy-42)

    Peripheral Leads

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    Advantages: Low cost, mature technology

    Easy to inspect for faults

    No CTE mismatch problems with FR-4 boards

    Disadvantages Long interconnect lengths, high self-inductance

    Lead co-planarity problem

    Peripheral array; low I/O density

    Modeling Peripheral Leads

    Gull-wing leads J-leads

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    Modeling advice: Form a critical heat transfer path for peripheral leaded packages

    Model as equivalent cuboid of volume averaged orthotropic conductivity.

    Modeling leads discretely does not improve model accuracy significantly forpackages with a large number of leads.

    Modeling Peripheral Leads

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    Package using solder balls is knownas Ball Grid Array (BGA)

    Technology pioneered by IBM in the1960s,

    Found wide acceptance in the1990s

    BGA use is rising almost

    exponentially, especially in the U.S.Array can be peripheral, with

    additional central balls

    Underfill rarely present

    Solder Balls

    Solder balls typically of95Pb/5Sn or 37Pb/63Snsolder

    Peripheral BallsCentral/Thermal

    Balls

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    Advantages of solder ball interconnect:

    High I/O density

    Excellent electrical performance (low self-inductance)

    Self-aligning during reflow, low manufacturing defectrate

    Disadvantages:

    Difficult to inspect for defects

    Possible CTE mismatch

    Not cheap (although cost is dropping)

    Solder Balls

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    Modeling choices:

    Each solder ball discretely, as a cuboid:

    Modeling Solder Balls

    Actual

    solder balls

    FLOPACK discrete

    solder balls modeled as

    cuboids with

    equivalent cross-

    sectional

    area

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    Modeling choices:

    As full cuboid (orthotropic)

    Modeling Solder Balls

    Full Cuboid

    Low conductivity

    in in-plane directionsHigh conductivity

    in through-plane

    direction

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    Package using pins is called a Pin GridArray (PGA). (More on PGAs later.....)

    Pins are typically made of Kovar (an alloy)

    They are often by means of a socket,connecting with the PCB through its ownpins

    Pins

    Socket

    Package pins

    Socket pins

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    Most pins have pitches of 50 mils or 100 milsand diameters of about 15 mils

    I/O counts of up to ~ 800

    Modeling approach:

    Ceramic packages: can model as equivalent volumeaveraged cuboid, as ceramic substrate is a good heatspreader

    Plastic packages: may need to model as discrete pins,

    especially if die size is small

    Modeling Pins

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    Modeling ICs

    Component Building Blocks

    Boards

    Heatsinks

    JEDEC standard test configurations

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    Term for the piece of semiconductor on which allthe active circuits lie

    Usually made of Silicon

    Gallium Arsenide is used in some special

    applications (microwave/high speed)

    Circuitry present within a thin layer on one sideonly, known as active surface

    The Die

    Active surface

    Die body

    (typically silicon)

    Circuitry

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    Modeling advice: Model as a cuboid with temperature dependent conductivity (for Silicon)

    Place collapsed source on active surface to represent heat dissipation

    Do not forget to set the source direction inwards, within the die!

    The Die

    Cuboid

    Collapsed source

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    Die Flag: The die is often placed (usually in plastic packages) on a thin metal plate known as

    the die flagordie pad.

    The die flag serves either a manufacturing or a thermal function, or both.

    The die flag is usually made of copper, and is typically larger than the die

    Die Flag

    DieDie Flag

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    Die Flag:

    Because the die flag is metallic, it can act as a veryeffective heat spreader

    Modeling the Die Flag:

    It is recommended that the die flag be modeleddiscretely

    Spreading within the die flag can reduce the thermalresistance of a package by ~ 15 %

    This is small, but not insignificant!

    Die Flag

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    Die Attach:

    The die is often attached to the substrate or thedie pad by an adhesive known as the die attach

    It is often made of an epoxy based compound Typical values for die attach: Thickness = 1-2

    mils, Conductivity = 1- 2 W/mK

    Die Attach

    DieDie pad

    Die Attach

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    Modeling the Die Attach: Negligible spreading, but thermal resistance can be significant

    Model as collapsed cuboid

    Die Attach

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    The die is fragile and needs protection (although packageswith bare dies do exist)

    Two common means of protection: Overmolding

    Capping

    Die Protection

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    Overmolding:

    Overmold is almost always an epoxy based

    compound Low conductivity (0.6 - 0.8 W/mK)

    A significant contributor to thermal resistance

    To reduce this resistance, a metallic slug issometimes placed inside a plastic package

    Overmolding

    Overmold

    Die

    Metal SlugAdhesive

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    Die Capping:

    In ceramic packages

    Capping seals off the die cavity Cap usually made of aluminum

    Model cap as cuboid

    May need to consider effects of radiation betweencap and die

    Capping

    Ceramic substrate

    Die

    Cap

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    Leadframes:

    A characteristic of all peripheral leaded packages

    Most packages with leadframes are plastic (PQFP,

    SOP, PLCC), but ceramic ones do exist (CQFP) Leadframes normally made of Copper, although

    Alloy-42 (a Ferrous alloy) can be found in olderdesigns

    Leadframes

    Die

    Internal

    Leadframe

    External

    Leadframe

    Die Flag

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    Leadframe attachment:

    Leadframe typically wire bonded to die

    TAB bonded in TAB packages When wire bonded, gap between die flag and

    leadframe is an important thermal bottleneck

    Leadframes

    Thermal bottleneck

    Bond wire

    Die

    Die flag

    Die attachLeadframe

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    Leadframe modeling: Can be modeled as cuboid blocks with volume averaged, orthotropic conductivity

    Take average extent for internal leadframe

    Modeling Leadframes

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    Substrates

    A substrate is an element on which the die ismounted to and which routes the I/Os from die toPCB

    Critical element from thermal standpointPackages without a substrate: PQFP, SOP (e.g)

    Substrates:

    Ceramic

    Organic

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    Ceramic Substrates:

    Most commonly made of Alumina (k = 20 W/mK)

    For better thermal performance, AlN or BeO also used(k ~ 200 W/mK)

    BeO is hazardous, requires special handling Ceramic layers placed together and fired in high

    temperature oven

    Metal traces usually made of Tungsten orMolybdenum

    Ceramic Substrates

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    Ceramic substrate

    Ceramic Substrates

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    Advantages:

    Hermetic; highly reliable

    Fine line widths

    Excellent thermal performance

    Many (20 +) trace layers possible

    Good CTE match with silicon die

    Disadvantages:

    Require specialized, expensive manufacturingtechnique

    CTE mismatch with FR-4 PCB, large packages needunderfill

    Ceramic Substrates

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    Applications: High power, heavy duty packages such as processors

    Modeling Ceramic Substrates: Relatively high conductivity

    Model simply as cuboid blocks

    Metal traces can be usually ignored Vias can be usually ignored

    Ceramic Substrates

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    Organic substrates:

    Present only in plastic packages e.g. Plastic Ball GridArray (PBGA), Plastic Pin Grid Array (PPGA)

    Challenging to model

    Dielectric made of a plastic based laminate resin;metal is usually copper

    Organic Substrates

    Metallization

    Resin

    Die

    Organic Substrate

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    Advantages:

    Lower dielectric constant than ceramic substrates

    Manufacturing technology similar to that for PCBs

    Less expensive to manufacture

    Excellent CTE match with PCB

    Disadvantages:

    Limited number of layers

    Need thermal enhancements

    Poor CTE match with silicon die

    Applications:

    ASICs, low power processors etc.

    Organic Substrates

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    Traces:

    Cu traces can be signal layers or power/groundplanes

    Typical organic substrates are either 2-layer or 4-layer

    2-layer substrate often (but not always) has signallayers only (no power and grounds)

    Organic Substrates

    Two signal traces

    Die

    Bond wire

    Die Flag

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    Traces: 4-layer substrates have two additional power and ground planes

    Organic Substrates

    Die

    Bond wire

    Die Flag

    Additional power

    and ground planes

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    Modeling traces:

    Lumping traces and resin together as a singlecuboid or block-and-plate is not recommended!

    Model traces as discrete layers

    Within each layer, volume average based on Cucoverage

    Organic SubstratesModeling Traces

    Cuboids

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    Vias

    Originally created for increasing interconnectiondensity in multiple layer PCBs

    Technology migrated to organic packages

    Today, also used for thermal enhancement(thermal vias)

    Organic SubstratesVias

    Substrate

    Cu plating

    Air

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    Via classification: Signal vias

    electrical function

    can be blind/buried

    Thermal vias

    serve purely thermal function

    usually thru-hole

    Organic SubstratesVias

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    Modeling vias:

    Typically model only thermal vias

    Difficult to model signal vias!

    Signal vias may be thermally significant in somepackages (e.g. flip-chip), need investigation.......

    Modeling approaches for thermal vias:

    as discrete

    most refined approach

    accounts for constriction resistance

    Takes up more grid; introduces large aspect ratio gridcells

    Organic SubstratesModeling Thermal Vias

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    Technology for manufacturing organic substratesand PCBs is similar

    Compatibility - Detailed Model and Board Model

    Need to pay attention to:

    Copper Planes

    Vias

    Connectors

    Radiation important in natural convection

    Modeling Boards

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    Modeling Boards

    FLOPACK PCB macro can create amodel with an arbitrary number of

    layers as well as compact or discretevia groups.

    Copper Planes Dielectric

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    Heatsinks

    If a heatsink is present on detailed packagemodel, it must be modeled accurately forconsistency

    Heatsinks:

    Parallel Fin Can use FLOTHERM SmartPart, or FLOPACK

    Pin Fin

    Can use FLOTHERM SmartPart, or FLOPACK

    Disk-fin FLOPACK generator

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    Heatsinks: Gridding Tips

    Proper gridding important for resolvingboundary layers within heatsinks

    Focus on extruded heatsinks (mostcommon)

    Transverse and streamwise directions arekey

    Transverse direction: Use 3 cells between fins

    No extra grid needed within fins

    2 cells sufficient to resolve base

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    Heatsinks: Gridding Tips

    3 Grid Cells

    between Fins

    2 Cells

    in BaseKeypoint Cells

    within Fins

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    Heatsinks: Gridding Tips

    Streamwise direction:

    Losses = Skin friction + Contraction/Expansion

    Transverse gridding resolves Skin Friction Losses

    Streamwise gridding critical to resolving

    Contraction/Expansion Losses Cluster cells at entrance and exit of extruded heatsink

    Normal direction:

    Less critical

    3-4 cells are usually sufficient

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    Heatsinks: Gridding Tips

    Grid clustered at heatsink entrance and exit

    Fins

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    Heatsinks: Miscellaneous

    Model radiation on heatsink surfaces in natural convection

    Do not forget thermal grease (model as collapsed cuboid)

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    JEDEC Test Configurations

    JEDEC JC 15.1 subcommittee

    Standards to provide Figures of Merit forcomparing package performance(http:///www.jedec.org)

    Examples of Standards available:

    Still Air Test for Theta-JA (Rja)

    Forced Air Test for Theta-JMA (Rjma)

    Ring Cold Plate for Theta-JB (Rjb)

    Low Conductivity Test Board (1S Board)

    High Conductivity Test Board (2S2P Board)

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    JEDEC Test Configurations

    Standards being discussed: Cold Plate for Theta-JC

    Various standards for new test boards

    Other:

    Validation beds for computational models

    Reporting format for detailed models

    Standards for compact modeling

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    JEDEC Standard Test Configurations

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    Ring Cold Plate

    Example: Standard for Theta-JB (Ring Cold Plate)

    C t M d li

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    Compact Modeling

    Introduction

    Compact Model Topologies

    Deriving 2-Resistor Models

    Deriving DELPHI Compact Models

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    Detailed Models

    Recall that .....A Detailed Model attempts to capture thermal

    behavior of a package by reproducing thephysical structure of the package ascompletely as possible

    Wh C t M d l ?

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    Why Compact Models?

    Limitations of Detailed Models

    Reveal internal (proprietary) construction details of packages

    Are computationally demanding due to large grid required

    A Compact Model seeks to capture the thermalbehavior of the package accurately ....

    ... at pre-determined (critical) points (junction, case etc.)

    .... by using a reduced set of parameters to represent thepackage

    These parameters need not be geometricThe most popular approaches use some sort of thermal

    resistance network representation

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    2-Resistor Compact Models:

    A significant improvement oversingle-resistor metrics

    Simple topology

    Can be used in System/Board-level/EDA tools (via IDF 3.0)

    Can be derived experimentally orcomputationally

    Typical accuracy for most cases is