The Impact of Electro- Thermal Coupling on RF Power Amplifiers
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Transcript of The Impact of Electro- Thermal Coupling on RF Power Amplifiers
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The Impact of Electro-Thermal Coupling on RF Power Amplifiers
Matthew Ozalas Keysight Technologies SANTA ROSA, CA
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Self Heating Mutual Heating Transient Heating
Review of Heating in Active Devices:
(+ different approaches to modeling these)
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Device Heating Basics:
PdissRTT thambientdevice *+=
⎟⎟⎠
⎞⎜⎜⎝
⎛++
−=
)2()2(ln
)(21
sub
sub
tLWtWL
WLRth
κ
⎥⎥⎥
⎦
⎤
⎢⎢⎢
⎣
⎡=
333231
232221
131211
RRRRRRRRR
Rij
Self Heating Terms
j
iij P
TRΔΔ=
1 2 3
Self Heating
Mutual Heating
Substrate Spreading Term (for rectangular geometries L>W)
Thermal Conductivity
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Transient Thermal Response Keysight GaAs HBT Test Device (Probe) Transient pulse applied to Vcollector
Resulting Thermal Response in Ic
(Log Scale for time)
Fall Time ~ 0.1 us
(Current drop shown here is due to dev. cooling)
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Lumped Modeling Approach
ththth CR=τ Intrinsic Device temp tracks RF power burst well
Thermal Network is modeled as a RC Network(s) for fast pulses
Intrinsic Device ~ns to us
Die or Wafer
Package
~ms
~s
Die + Device temp delayed in responding
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Iteration loop is done automatically
until powers and temperatures are
self-consistent
Circuit Simulator Read temperatures
Solve electrical equations Write power dissipation
Thermal Simulator Read power dissipation Solve thermal equation
Write temperatures PDISS
TDEVICES
Thermal technology
files
Electro-thermal Modeling Approach
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Lumped Thermal RC vs. Full 3D Electro-thermal Single HBT Device, Beta Drop due to heating
vs
AHBT_Model HBTM1
Xth2=0.0 Cth2=0.0 Rth2=0.0 Xth1=0.0 Cth1=5.0e-10 Rth1=1000.0 Tnom=25.0
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Self Heating Mutual Heating Transient Heating
– Long Term Failure
– Thermal Stability / Balance
– Device and Circuit Performance
– Memory Effects
Review of Heating in Active Devices:
Areas where heating is impactful to PA Design:
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Context: Commercial WLAN PA (HBT)
PA
Sw
itch Ctrl
GaAs HBT PA Layout
PA Schematic
Product Diagram
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PA Bias Topology
rfRbmir VbeVVbe +=
Vbe vs. Temperature
Well known characteristic of PN junction diodes: Diode voltage is CTAT
Hold RF Device Temp Constant, vary Tmirror:
MIR
OUT
MIR
MIR
MIR
OUT
dVbedI
dTdVbe
dTdI *=
Iref
Imir
Vbemir
Qmir Qrf
Iout
Vberf
Rb
)()(
)(
rfrfT
mirrRb
VVbe
rfTMIR
OUT eVIs
dVbedI π
−
=
CmVdTdVbe
MIR
MIR !/1.1−≈
If TMIR ↑, VbeMIR ↓ If VbeMIR ↓, IOUT ↓
If Qmir is cooler than Qrf, the bias current Iout will increase, which can increase the RF gain
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S2
S3
S1 S2
S3
S1
Thermally Coupled Bias Networks Thermally Decoupled Bias Networks
S1 bias S1 PA
S2 PA S2 bias
S3 PA
S3 bias
S1 bias
S2 bias S3 bias S1 PA
S2 PA
S3 PA
• Here we have two schematically identical WLAN PA layouts to demonstrate the differences between modeling approaches. The three conditions are:
- Isolated Self Heating Simulation (Static Thermal Network, Internal to AHBT Model) - Full Electro-thermal Simulation with moderately thermal-coupled bias networks - Full Electro-thermal Simulation with a poorly thermal-coupled bias network
Test Case: Two Different IC Layouts, Identical Schematic
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Bias Configuration
Tmir < Trf, Ibias ↑, Gain ↑
Mirror RF
Pdmir << Pdrf
Temperature Coupling and Memory Effects …Apply a low frequency RF power pulse
T (°C)
TfTr G
ain
Pin
Gain @ ΔTr
Gain @ ΔTf
Resulting Gain Hysteresis
Trf
TmirrorΔTfΔTr
Time
Gai
n
Pin
Gain @ TriseGain @ TfallTmirror
Ther
mal
ly
Isol
ated
Pin
ΔTr~0
ΔTf~0Tf
Tr
RF Input Pwr
Trf
Pin
Time
Thermal Response to RF Burst
Ther
mal
ly
Cou
pled
RF Input Pwr T (°C)
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Apply Time Dependent RF Power Burst, Plot gain curves at rising and falling edges
Input RF Pulse
RF Array Temp
Bias Temp thermally coupled case
thermally decoupled case
Due to thermal time constant, device temperature lags the RF Power Pulse
0.45 dB
0.2 dB
0 dB Self heating model
Pout (dBm)
Hysteresis in Gain Response (upramp/downramp)
ETH, Bias T-Decoupled
ETH, Bias T-coupled
Gai
n (d
B)
Placement of Bias Devices relative to RF Devices can enhance or minimize thermal memory effects!
Dev
ice
Tem
p (°
C)
Time (ms)
Transient Simulation with mutual heating between RF and bias device for different layout configurations
These plots compare:
Isolated Self Heating Model Mutual Heating Model, thermally decoupled Mutual Heating Model, thermally coupled
Simulation Results
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– Modeling distributed heating is critical in RF Power Amplifier Design, especially for low frequency phenomena such as memory effects or device-to-device interaction
– Memory effects at low frequencies might be due to:
• Cross-circuit, layout-dependent mutual heating
• Distributed heating on longer time scales
– This is a case where full Electro-thermal analysis is useful in the design process because it predicts problems that the intrinsic thermal RC network inside the device model does not
Closing