The Future of Thin-film Solar Cells

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Photovoltaics - Elect ricit y from Sunli ght UNSW   The Future of Thin The Future of Thin - - film Solar film Solar Cells Cells   Martin A. Green Martin A. Green University of New South Wales University of New South Wales Sydney Sydney UNSW Photovoltaics Centre of Excellence - supported by t he Australi an Research Council 

Transcript of The Future of Thin-film Solar Cells

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“ “ The Future of ThinThe Future of Thin--film Solar film Solar 

CellsCells” ” 

Martin A. GreenMartin A. GreenUniversity of New South WalesUniversity of New South Wales

Sydney Sydney 

UNSW Photovoltaics Centre of Excellence- supported by the Australian Research Council 

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Photovoltaics booming Photovoltaics booming 

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   N  e  w   C  a  p  a  c   i   t  y ,   G   W

Source: Photon International

ThinThin--filmfilm

Bulk Bulk 

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First generation cells First generation cells 

p-type

n ++

p +

metal

150-200 µm2-3 m m

 Larger Si wafer area than ICs Larger Si wafer area than ICs

 Issues Issues

. thinner cells. thinner cells. simpler Si purification. simpler Si purification

. higher conversion efficiency. higher conversion efficiency

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Second Generation: thin Second Generation: thin - - film film 

Advantages Advantages 

. low materials cost . low materials cost . large manufacturing unit . large manufacturing unit 

. fully integrated modules. fully integrated modules

. aesthetics, ruggedness?. aesthetics, ruggedness?

Thin Thin - - film Technologies film Technologies 

.. Silicon Silicon . amorphous. amorphous. microcrystalline. microcrystalline. polycrystalline. polycrystalline

.. Chalcogenide Chalcogenide (polycrystalline)(polycrystalline). CIS, CIGS [Cu ( . CIS, CIGS [Cu ( In,GaIn,Ga ) (Se,S) ) (Se,S)2 2  ]  ] .. CdTeCdTe

.. Dye sensitised Dye sensitised ,, Organics Organics 

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Silicon Thin Silicon Thin - - Film Film 

aa--Si,Si, µ µ c c --Si, c Si, c --Si Si 

amorphous, microcrystalline, (poly amorphous, microcrystalline, (poly -- )crystalline )crystalline

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Chalcogenides Chalcogenides : CdTe and CIGS : CdTe and CIGS 

. easily deposited . easily deposited 

. Cd toxic, Te scarce . Cd toxic, Te scarce 

. highest efficiency . highest efficiency 

. tricky to deposit . tricky to deposit 

. Cd toxic, In scarce . Cd toxic, In scarce CdTeCdTe

CIGSCIGS

glass

TCO

windowalloy layer

absorber

metal contact

SnO2CdS

CdSxTe1-x

CdTe

contact Mo

TCOwindow

absorber

ZnO

glass

Cu (Ga,In) (Se,S)2

CdS

substrate

CuInGaSeSCuInGaSeS

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Other Advanced Thin Other Advanced Thin - - Films: Films: 

Dye Dye - - sensitised; Organic sensitised; Organic 

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Cost reduction Cost reduction 

20000 

10000 

5000 

2000 

1000 

500 

200 0.01 0.1 1.0  10.0  100.0 

Gas turbines (USA) 

(~20%, ~10%) 

1980 

1963 

1982 

1987 1993 

2001

Wind turbines 

2002 

Cumulative GW installed 

1981

Photovoltaics (learning ~20%) 

USA (~20%) 

World (~5%) 

   2   0   0   3   U   S   $   /   k

   W

Adapted from Adapted from 

Gr Gr ü ü bler bler et al.,1999 et al.,1999 

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ThinThin--filmfilm

Cost reduction Cost reduction 

20000 

10000 

5000 

2000 

1000 

500 

200 0.01 0.1 1.0  10.0  100.0 

Gas turbines (USA) 

(~20%, ~10%) 

1980 

1963 

1982 

1987 1993 

2001

Wind turbines 

2002 

Cumulative GW installed 

1981

Photovoltaics (learning ~20%) 

USA (~20%) 

World (~5%) 

   2   0   0   3   U   S   $   /   k

   W“ “ Thin Thin - - film film ” ” Photovoltaics Photovoltaics 

Adapted from Adapted from 

Gr Gr ü ü bler bler et al.,1999 et al.,1999 

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The 3 generationsThe 3 generations

II

100

80

60

20

0 100 200 300 400 500

US$0.50/W

US$1.00/W

US$3.50/W

Cost, US$/m2

US$0.10/W US$0.20/W

Present limitIII

Thermodynamiclimit

40

I

   E   f   f   i  c   i  e  n

  c  y ,   %

Bulk Bulk 

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The 3 generationsThe 3 generations

II

100

80

60

20

0 100 200 300 400 500

US$0.50/W

US$1.00/W

US$3.50/W

Cost, US$/m2

US$0.10/W US$0.20/W

Present limitIII

Thermodynamiclimit

40

I

   E   f   f   i  c   i  e  n

  c  y ,   %

 Includes dye, organic Includes dye, organic

ThinThin--filmfilm

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Thermodynamic efficiency limitsThermodynamic efficiency limits

Tc

Es

Ss

Ec

Sc

SG>0

TA

W

Q

S = Q/TA

η ≤ (1-T  ASs /E s ) = 93.3% (direct) = 73.7% (global)

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The 3 generationsThe 3 generations

?

II

100

80

60

20

0 100 200 300 400 500

US$0.50/W

US$1.00/W

US$3.50/W

Cost, US$/m2

US$0.10/W US$0.20/W

Present limitIII

Thermodynamiclimit

40

I

   E   f   f   i  c   i  e  n

  c  y ,   %

 . high . high--efficiencyefficiency . thin . thin-- film film . abundant . abundant

 . non . non-- toxic toxic . durable . durable

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UNSW approachUNSW approach

 I  I 

Evolutionary emphasis Evolutionary emphasis upon crystalline silicon upon crystalline silicon 

(robust, abundant, non (robust, abundant, non - - 

toxic) toxic) 

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UNSW approachUNSW approach

 I  I 

 II  II 

Evolutionary emphasis Evolutionary emphasis upon crystalline silicon upon crystalline silicon 

(robust, abundant, non (robust, abundant, non - - 

toxic) toxic) 

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Third generation optionsThird generation options

100%

74%

68%

54%49%44%

39%31%

0%

58%

circulators

tandem (n )hot carrier

impurity PV & band, up-converterstandem (n = 3)thermal, thermoPV, thermionics

impact ionisationtandem (n = 2)

down-converterssingle cell

tandem (n = 6)

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Third generation optionsThird generation options

100%

74%

68%

54%49%44%

39%31%

0%

58%

circulators

tandem (n )hot carrier

impurity PV & band, up-converterstandem (n = 3)thermal, thermoPV, thermionics

impact ionisationtandem (n = 2)

down-converterssingle cell

tandem (n = 6)

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Si Si --based tandemsbased tandems

42.5%

47.5%50.5%

Number of cells

1 2 3

10

20

30

40

0

0

Si bottom cell

Free choice

29%

33%

45%

   A   M   1 .   5

   G 

   E   f

   f   i   c   i   e   n   c   y

Free choice

or Si cell

Decreasing band gap

Sunlight

Intrinsic radiative and Auger losses included Intrinsic radiative and Auger losses included 

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Si Si --tandem concept tandem concept 

CSG Solar approach CSG Solar approach 

. high . high - - T silicon T silicon 

. high . high - - density contacts density contacts 

. good optics . good optics 

. deposit then process . deposit then process 

. also suits hot . also suits hot - - carrier carrier 

Metal

Resin

p+

n+

Light In

p+p

n+

p

Textured glass

'Crater' 'Groove' 'Dimple'

Up-converters ? 

1 - 3 QD cells ? 

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100nm100nm

Fabrication of Si quantum dotsFabrication of Si quantum dots

SiOx, SiyNx, SiCx

SiO2, Si3N4, SiC

Zacharias et al., APLZacharias et al., APL 80 80 , 661, 2002 , 661, 2002 

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Si quantum dot photoluminescenceSi quantum dot photoluminescence

Norm. PL Spectra

(2-5nm dots; 300K)

01.2 1.4 1.6 1.8 2

Photon energy, eV

5nm (270s)4nm (240s)

3nm (180s)2nm (120s)

100nm100nm

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Third generation optionsThird generation options

100%

74%

68%

54%49%44%

39%31%

0%

58%

circulators

tandem (n )hot carrier

impurity PV & band, up-converterstandem (n = 3)thermal, thermoPV, thermionics

impact ionisationtandem (n = 2)

down-converterssingle cell

tandem (n = 6)

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Hot Hot --carrier cell concept carrier cell concept 

tunnelingcontact

absorber

100nm100nm

Bandgap (eV)

cold carriers

0.0 0.5 1.0 1.5 2.0 2.5 3.0

80

60

40

20

0

   E   f   f   i  c   i  e  n  c  y   (   %   )

1

2hot carriers

InN Si

quantum dot absorber

hole contactelectron contact

TTaa

TTcc

Efficiency > 4 cell tandem

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Summary Summary 

.. need to fix carbon problem at sourceneed to fix carbon problem at source – – provide clean, more cost  provide clean, more cost --effective electricity optionseffective electricity options

. photovoltaics provides a solution provided . photovoltaics provides a solution provided 

 –  –  volumes increased and costs reduced dramatically volumes increased and costs reduced dramatically 

. high energy conversion efficiency is the key to lowest . high energy conversion efficiency is the key to lowest 

 possible long  possible long --term coststerm costs. high efficiency thin. high efficiency thin--film technologies described for film technologies described for 

 post  post --2020 era2020 era