The 0.15µm GaN Hemt process...GaN TECHNOLOGY GH15 GaN process is optimized up to 35GHz for high...

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GaN TECHNOLOGY GH15 GaN process is optimized up to 35GHz for high power, high PAE and high linearity. The Gallium Nitride power density combined with a thermal dissipative SiC substrate brings to 3.5W/mm at 30GHz. This MMIC process includes MIM capacitors, inductors, air bridges, metallic resistors, via through the substrate and two metal layers for interconnections. GH15 is the ideal process to design: • High power and high PAE amplifiers up to Ka-band • Robust LNA • High Power switches Build your own solution with UMS www.ums-gaas.com The 0.15µm GaN Hemt process >>>

Transcript of The 0.15µm GaN Hemt process...GaN TECHNOLOGY GH15 GaN process is optimized up to 35GHz for high...

Page 1: The 0.15µm GaN Hemt process...GaN TECHNOLOGY GH15 GaN process is optimized up to 35GHz for high power, high PAE and high linearity. The Gallium Nitride power density combined with

GaN TECHNOLOGY

GH15 GaN process is optimized up to 35GHz for high power, high PAE and high linearity. The Gallium Nitride power density combined with a thermal dissipative SiC substrate brings to 3.5W/mm at 30GHz. This MMIC process includes MIM capacitors, inductors, air bridges, metallic resistors, via through the substrate and two metal layers for interconnections.

GH15 is the ideal process to design:• High power and high PAE amplifiers

up to Ka-band• Robust LNA• High Power switches

Build your own solution with UMSwww.ums-gaas.com

The 0.15µm GaN Hemt process

>>>

Page 2: The 0.15µm GaN Hemt process...GaN TECHNOLOGY GH15 GaN process is optimized up to 35GHz for high power, high PAE and high linearity. The Gallium Nitride power density combined with

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Contact us:

Worldwide distributor: Richardson RFPDwww.richardsonrfpd.com

UMS SAS – EMEA,Ph: +33 1 69 86 32 [email protected]

UMS USA, Inc. - America,Ph: +1 781 791 [email protected]

UMS - Asia, Ph: +86 21 6103 1703 [email protected]

www.ums-gaas.com

Process Design Kit (PDK) includes non-linear electro-thermal models, noise model, diodes & switches models, passive models, all with associated library elements.

Applications targeted with GH15:• Pt to Pt radio• 5G• Satcom• Radar• Broadband amplification• Hi-Rel products

Element Typical Value

Vt -3,2 V

Idss 1.2 A/mm

Ids+ 1.4 A/mm

Gm 390 mS/mm

VdsDC 20 V

Ft > 35 GHz

Fmax > 100 GHz

MIM density 175 pF/mm2

Metallic resistors 30 and 1000 Ohms/sq

Via-holes available on 70-µm substrate thickness

Process main features


James Neli Gan

James Neli Gan

Plessey GaN-on-Silicon LED The Impact of GaN -on-Silicon ...

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Gan Assignment

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SPA-GAN: Spatial Attention GAN for Image-to-Image ... - arXiv

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1200V GaN Half Bridge NTC2-LS VM40HB120Dvisic-tech.com/wp-content/uploads/2017/08/VM40HB120D-ver1.20.pdf1200V GaN Half Bridge VM40HB120D GaN Power Integrated Description Based on GaN

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Characterization of N-polar GaN/AlGaN/ GaN HEMTs on ...

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P-GaN/AlGAN/GaN E-mode HEMT

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Gan 2011/2012

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MedGAN Progressive GAN IcGAN CGAN BIM ff … · Adversarial Machine Learning 3D-GAN AC-GAN AffGAN AdaGAN ALI AL-CGAN FGSM AnoGAN ArtGAN BIM Bayesian GAN BEGAN BiGAN BS-GAN CGAN

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GaN Transistors

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Aluminum Gallium Nitride (GaN)/GaN High Electron Mobility

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GaN MOCVD-MBE

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Generative Adversarial Networks (GAN)hanxiaol/slides/gan.pdf · Outline I Implicit Generative Models I GAN I Variants I f-GAN I Wasserstein GAN I Use cases I Conditional generation

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TRANSFORMING THE WORLD - GaN Systems · Global company with decades of experience in GaN ... Power Supply with Silicon. Power Supply with GaN. 4 Designing with GaN is straight-forward

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1 MW-GAN: Multi-Warping GAN for Caricature Generation with … · 2020-01-08 · 1 MW-GAN: Multi-Warping GAN for Caricature Generation with Multi-Style Geometric Exaggeration Haodi

1 MW-GAN: Multi-Warping GAN for Caricature Generation with … · 2020-01-08 · 1 MW-GAN: Multi-Warping GAN for Caricature Generation with Multi-Style Geometric Exaggeration Haodi

FD-GAN: Pose-guided Feature Distilling GAN for Robust ...papers.nips.cc/paper/7398-fd-gan-pose-guided-feature-distilling-gan... · eliminate pose-related information, we added an

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Dist-GAN: AnImproved GAN using Distance Constraints...Dist-GAN: AnImproved GAN using Distance Constraints Ngoc-Trung Tran[0000−0002−1308−9142], Tuan-Anh Bui[0000−0003−4123−262],

Dist-GAN: AnImproved GAN using Distance Constraints...Dist-GAN: AnImproved GAN using Distance Constraints Ngoc-Trung Tran[0000−0002−1308−9142], Tuan-Anh Bui[0000−0003−4123−262],

RF Front-End Design for X Band using 0.15µm GaN HEMT ... · An X-band RF front-end circuit for next generation wireless network applications is presented in this work. It details

RF Front-End Design for X Band using 0.15µm GaN HEMT ... · An X-band RF front-end circuit for next generation wireless network applications is presented in this work. It details

Proton Recoils in GaN & Upcoming RF GaN Work

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GN001 Application Guide Design with GaN Enhancement …€¦ · GaN Systems – 1 GN001 Application Guide. Design with GaN Enhancement mode HEMT. Updated on JAN-24-2018. GaN Systems

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