Target

Beam

rmax = 150 mm

12

34

1 2 3 4 56

r / mm13595

2555

2040 70100

160230

-170-230

z / mm

6 disk layers 4 barrel layers Silicon detectors:

Hybrid pixel detectors Double-sided microstrip detectors

Target

Beam

Implementation Approx. 11 million

pixel readout channels Approx. 200. 000

strip readout channels

Detailed CAD model

Detailed model including routing

Active detector volumes only

Detector simulation

Circular occupancy Bundling (top/bottom)

PatchPanels

Circular or bundled

(7.6 … 15.0) cm

0-23-40-100 z / cm 60

Beam

Overall routing concept

Overall detector integration

Central support frame

3 point fixation Global frame (MVD):

2 halves

MVD attachment

2 pixel half-barrels

2 strip half-barrels

6 pixel half-disks

2 strip half-disks

Main MVD parts

Mechanics

• Cooling concept Coolant: Water (18°C) Vacuum-operated mode using

hydrostatic pressure Active part:

ext 2 mm pipe (Ni-Co alloy)

Upstream routing: ext 4 mm flexible plastic pipes

Micro fittings:Thermoplastic

resin

Barrel layer

Test setup

23°C

31°C

Glue: Epo-Tek H70

Tmax = 37.2°C

Glue: Master Bond

Tmax = 30.4°C Tmax = 28.2°C

Glue: Artic Silver

Thermal FEM analysis

Infrared image

Mechanics• Lightweight support structures

Sandwich structure: (Carbon – Rohacell – Carbon)

Stiffening structure:2...4 layers of carbon fibre (400 m)

HTC foam half disk embedding cooling pipes

R = 137 mmL = 460 mmS = 3.8 mm

MVD half support frame

Barrel layer support

Local support (barrel modules)

• ToPix: Custom designed readout chip Specifications

Untriggered readout High output bandwidth 116 110 pixel matrix

(100 100 m2 cell size) Time over threshold technique

(TOT) for amplitude measurement Low power consumption

(< 500 mW/cm2) CMOS 130 nm technology

Measurements Testing procedures Total ionizing dose test ToPix prototype

connected to epi-sensor

Detector development: Front end electronics

Detector development

• Pixel sensor Specifications

Epi-Silicon layer: (50 ... 100) m Thinned Cz silicon substrate: 50 m Alt.: Thinned oxygen enriched silicon

Measurements Sensor characterization Radiation damage test (neutrons)

Maximum count rates / frontend: (1 ... 10) Mevts / s Integrated count rate (pixel part): 1.8 Gevts / s Integrated count rate (strip part): 1.2 Gevts / s

Full MVD: 3.0 Gevts / s

Count rates

• Spatial coverage 2D mapping: Number of MVD points / track

Design optimization for a minimum of 4 track points

Number of MVD points

/ track

Active MVD volumes

• Radiation length studies (Geantino) 1D profile scan for polar angle

Minimized material budget for polar angle < 140° Higher values above 140° due to upstream routing Slight enhancement 40° due to lead-out of pixel disk services

Detailed MVD model

< 1% / layer ( < 10%)

• Momentum resolution

p pt

1 GeV/c pions (0;0;0)

(pt) without MVD = 2.9 %(pt) with MVD = 1.4 %

(p) without MVD = 2.6 %(p) with MVD = 1.4 %

Improvement by 50%

• Single track resolution

No resolution along z without MVD

z xy

zxy z 65 m

15 GeV/c• Primary vertex resolution

• Vertex resolution Primary and secondary

vertex resolution: x,y 35 m

z 100 m

(6.57 / 7.50 / 8.50) GeV/c

d0

• Physics analysis Reconstruction:

Conservative estimate

d0

S/N 2

6 orders of magnitude lower

decay lengthScaled back- ground

Vertex cut:

S/N =1

arXiv:0903.3905v1 [hep-ex]

23% efficiency

Background suppression for open charm channels

impossible without MVD