Table of Contents 2007 IEEE International Electron Devices … · 2012. 2. 7. · premier forum for...

October 2007 Vol. 14, No. 3 ISSN:1074 1879 Editor-in-Chief: Ninoslav D. Stojadinovic

Your Comments SolicitedYour comments are most welcome. Please write directly to the Editor-in-Chief of the Newsletter at [email protected]

Table of ContentsUpcoming Technical Meetings . . . . . . . . . . 1

• 2007 IEDM • 2007 SISC • 2008 IRPS

June 2007 AdCom Meeting Summary . . . . 3Society News . . . . . . . . . . . . . . . . . . . . . . . . 9• William F. Van Der Vort II - Winner of the 2007

IEEE Eric Herz Outstanding Staff Member Award• Report from the EDS Vice-President of Membership• Report from the EDS Vice-President

of Technical Activities• EDS Compound Semiconductor Devices

and Circuits Committee Report• EDS Masters Student Fellowship

- Call for Nominations• Two EDS Members Named Recipients

of 2007 IEEE Awards• EDS Region 10 Chapters Meeting Summary• Workshop Organized by ED UNICAMP Student

Chapter and the ED South Brazil Chapter• Report on the IEEE EDS Mini-Colloquium Held in

China – WIMNACT-12• IEEE Expert Now• EDS Membership Fee Subsidy Program (MFSP)• Congratulations to the EDS Members Recently

Elected to IEEE Senior Member Grade• Online Access to IEEE Journals Available

to EDS Members• Annual EDS DVD Update Package Available

to EDS Members• EDS Thank You to Tsinghua and Peking

UniversitiesRegional and Chapter News . . . . . . . . . . . 24EDS Meetings Calendar . . . . . . . . . . . . . . . 29Your Career and Networking with IEEE EDS AdCom Members . . . . . . . . . . . . . . . . 32

53rd IEEE International Electron Devices Meeting to Feature TSMC Chairman, Morris Chang, as Luncheon Speaker

The IEEE International Electron Devices Meeting (IEDM), the Elec-tion Devices Society’s annual technical conference, is the world’spremier forum for cutting-edge research into electronic, micro-electronic, and nanoelectronic devices and processes. This yearthe IEDM will be held in Washington, D.C. at the Hilton Washing-ton Hotel December 10-12, 2007.

No other meeting presents as much leading work in so manydifferent areas of microelectronics, encompassing both siliconand non-silicon device and process technology, molecular elec-tronics, nanotechnology, optoelectronics and MEMS (micro-electromechanical system) technology.

Highlights of IEDM 2007 will include a luncheon talk by MorrisChang, Chairman of Taiwan Semiconductor Manufacturing Com-

(continued on page 6)

The Washington Monument in Washington, D.C. is among the world’s tallestmasonry structures, standing 555 feet (169.29 m) in height and made of marble,

granite, and sandstone

2007 IEEE InternationalElectron Devices

Meeting (IEDM)

2007 IEEE InternationalElectron Devices

Meeting (IEDM)

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2 IEEE Electron Devices Society Newsletter ❍ October 2007

President

Ilesanmi AdesidaUniversity of IllinoisE-mail: [email protected]

President-Elect

Cor L. ClaeysIMECE-mail: [email protected]

Treasurer

Stephen A. ParkeTennessee Tech UniversityE-Mail: [email protected]

Secretary

John K. LowellConsultantE-Mail: [email protected]

Jr. Past President

Hiroshi IwaiTokyo Institute of TechnologyE-mail: [email protected]

Sr. Past President

Steven J. HilleniusSemiconductor Research Corp.E-mail: [email protected]

Vice-President of Awards

Alfred U. Mac RaeMac Rae TechnologiesE-Mail: [email protected]

Vice-President of

Educational Activities

Paul K. L. YuUniversity of California at San DiegoE-Mail: [email protected]

Vice-President of Meetings

Jon J. CandelariaMotorolaE-mail: [email protected]

Vice-President of Membership

Albert Z. H. WangUniversity of California, RiversideE-Mail: [email protected]

Vice-President of Publications

Renuka P. JindalUniversity of Louisiana at LafayetteE-Mail: [email protected]

Vice-President of Regions/

Chapters

Juin J. LiouUniversity of Central FloridaE-Mail: [email protected]

Vice-President of Technical Activities

April S. BrownDuke UniversityE-Mail: [email protected]

IEEE Newsletters

Paul Doto, Paul DeSessoIEEE Operations CenterE-Mail: [email protected],[email protected]

Executive Director

William F. Van Der VortIEEE Operations CenterE-Mail: [email protected]

Business Coordinator

Joyce LombardiniIEEE Operations CenterEmail: [email protected]

IEEE Electron Devices Society Newsletter (ISSN 1074 1879) is published quarterly by the Electron Devices Society of the Institute of Electrical and ElectronicsEngineers, Inc. Headquarters: 3 Park Avenue, 17th Floor, New York, NY 10016-5997. Printed in the U.S.A. One dollar ($1.00) per member per year is included in theSociety fee for each member of the Electron Devices Society. Periodicals postage paid at New York, NY and at additional mailing offices. Postmaster: Send addresschanges to IEEE Electron Devices Society Newsletter, IEEE, 445 Hoes Lane, P.O. Box 1331, Piscataway, NJ 08855-1331.

Copyright © 2007 by IEEE: Information contained in this Newsletter may be copied without permission provided that copies are not used or distributed fordirect commercial advantage, and the title of the publication and its date appear on each photocopy.

EDS AdComElected Members-at-Large

Elected for a three-year term (maximum two terms) with ‘full’ voting privileges

2007 Term 2008 Term 2009 Term

J. N. Burghartz (1) G. Baccarani (1) S. S. Chung (2)M. J. Chan (1) J. Deen (1) R. Huang (1)M. Estrada del Cueto (2) F. J. Garcia Sanchez (2) R. P. Jindal (1)S. Ikeda (1) J.B. Kuo (1) M. Lundstrom (2)R. J. Nikolic (1) J.J. Liou (2) H. S. Momose (1)N. D. Stojadinovic (2) H. Shang (1) A. Z. H. Wang (2)J. J. Wesler (1) J. W. Swart (1) X. Zhou (2)

S. Tyagi (1)

ELECTRON DEVICESSOCIETY

ELECTRON DEVICESSOCIETY

CONTRIBUTIONS WELCOMECONTRIBUTIONS WELCOME

Readers are encouraged to submit news items concerning the Societyand its members. Please send your ideas/articles directly to either the Edi-tor-in-Chief or appropriate Editor. The e-mail addresses of these individu-als are listed on this page. Whenever possible, e-mail is the preferredform of submission.

Newsletter DeadlinesIssue Due Date

January October 1stApril January 1stJuly April 1stOctober July 1st

The EDS Newsletter archive can be found on the Society web site athttps://www.ieee.org/portal/pages/society/eds/pubs/newsletters/newsletter.html. The archive contains issues from July 1994 to the present.

REGIONS 1-6, 7 & 9

Eastern, Northeastern & South-

eastern USA (Regions 1, 2 & 3)

Ibrahim M. Abdel-MotalebNorthern Illinois UniversityE-Mail: [email protected]

Central USA & Canada

(Regions 4 & 7)

Jamal DeenMcMaster UniversityE-Mail: [email protected]

Southwestern & Western USA

(Regions 5 & 6)

Sunit TyagiIntelE-Mail: [email protected]

Latin America (Region 9)

Jacobus W. SwartState University of CampinasE-mail: [email protected]

REGION 8

Eastern Europe & The Former

Soviet Union

Alexander V. GridchinNovosibirsk State Technical UniversityE-mail: [email protected]

Scandinavia & Central Europe

Andrzej NapieralskiTechnical University of LodzE-Mail: [email protected]

UK, Middle East & Africa

Zhirun HuUniversity of ManchesterE-mail: [email protected]

Western Europe

Cora SalmUniversity of TwenteE-Mail: [email protected]

REGION 10

Australia, New Zealand &

South Asia

Xing ZhouNanyang Technological UniversityE-Mail: [email protected]

Northeast Asia

Kazuo TsutsuiTokyo Institute of TechnologyE-mail: [email protected]

East Asia

Hei WongCity University of Hong KongE-Mail: [email protected]

Editor-In-Chief

Ninoslav D. StojadinovicUniversity of NisE-Mail: [email protected]

NEWSLETTEREDITORIAL STAFF

NEWSLETTEREDITORIAL STAFF

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October 2007 ❍ IEEE Electron Devices Society Newsletter 3

The 2007 Springmeet ing of theIEEE ElectronDevices Societywas called to orderby President Ilesan-mi “Ade” Adesidaon Sunday, June 3at the Xijao Hotelin Beijing, China.

Executive ReportsAfter approval of the December 2006meeting minutes, President Adesidaexpressed the Society’s appreciationand recognition to Tian-Ling Ren, Bei-jing Chapter Advisor and Chen Yang,Chapter Chair of the ED TsinghuaUniversity Student Branch Chapterwho with Albert Wang were the keycoordinators for the EDS AdComMeeting Series. His further remarksaddressed the formation of the IEEETechnology Management Council(TMC). At the December AdCom, EDSapproved its joining of the TMC as asustaining member. By September ofthis year, EDS must appoint a repre-sentative to the TMC Board to serveeither 2 or 3 years. In reviewing theFebruary TAB meeting, PresidentAdesida reported the approval of theEDS Field of Interest Statement revi-sion. Also approved were the IEEEIntelligent Transportation SystemSociety’s proposal for a new periodi-cal, and a new periodical by the IEEERobotics and Automation Society.The preliminary net financial outcomefor 2006 for all societies, councils andTAB showed a total surplus of$32.2M. The net outcome for IEEEoverall resulted in a surplus of $36M.

Treasurer, Stephen Parkereports that EDS finances are doingwell with conference income for 2006closing at $474.3K [Note: All financesgiven in $US], Conference Publicationprofits were $1037K, EDS investmentsreturned $473.3K and the total net sur-plus for the Society was $1045.7K. Asof June 2006, our current reserve bal-ance is $5906K. Stephen listed EDSinitiatives for the 2008 budget (seechart at right) with a total cost of$140K. He also detailed how initiativesare funded. If a society or council (S/C)

initiative is under $100K and it doesnot cause the S/C to go negative, itcan be included directly in the S/Cbudget. Options exist that allow anysociety with an expense to reserveratio of 50% or greater (EDS is 85.8%as of 2006) to budget for initiativesequal to about 3% of its reserves, ifnecessary. For EDS, this amountwould be $177K (3% of $5906K).Although the new initiative processaddresses the 2008 budget, EDScan consider implementing a 2008initiative in late 2007.

President-Elect, Cor Claeys, giv-ing the ExCom report, reviewed theEDS Strategic Plan and updatesthereto, the state of EDS finances,changes to the EDS Technical Com-mittees, the 2008 new initiatives, TABapproval of the EDS Field of InterestStatement revision, and the status ofnew membership benefits. Alsodecided was the site of the Spring2008 AdCom Meeting series whichwill be in Athens, Greece, 31 May and1 June.

In his EDS Executive Officereport, Bill Van Der Vort, listed allprojects completed since the Decem-ber 2006 meeting. The Office’s list ofaccomplishments include developingan EDS Education Award brochurefor distribution at IEDM, finalizationof approvals for the revised EDS Fieldof Interest Statement, leading an IEEEoffice-wide project to gather require-ments for society web-sites and theirsupport, getting trained on the newIEEE membership/fulfillment system(BMS), researching history of EDSchapters towards preparing a docu-

ment on the subject, worked withEduCom and VP-Publications on thepossibility of converting short coursevideotapes to CD/DVD and offering asa new member benefit, explored withEduCom a possible Career GuideCD/DVD for students and advisorsbased on the EDS Field of InterestStatement and related to school cur-riculum to increase EDS presenceand promote membership, workedwith members of the IRPS committeeand IEEE staff towards digitizing thelegacy years of the IRPS Proceedings(1970-87) adding them to IEEEXplore, coordinated with T-ED editorand IEEE staff to digitize the VLSISymposium (1981-87) legacy yearsadding them to IEEE Xplore, support-ed IEEE-wide process to encourageconferences to improve the timeli-ness of obtaining an Xplore-compati-ble CD for their proceedings andXplore posting, obtained data todefine EDS meetings from both aregional and a topical perspective aspart of the evaluation process, andcoordinated with the Meetings-VP ongetting the necessary approvals forfour meetings requesting EDS sup-port. Also presented were the IEEEExecutive Office’s efforts to identifykey EDS technically co-sponsored(and well attended by EDS AdCommembers) meetings where promo-tional material on membership couldbe distributed, propose a possible“EDS rate” for conference registra-tions lower than the IEEE memberrate, development of a proposal foran EDS Education Award, workedwith EduCom on web-based course

June 2007 AdCom Meeting Summary

(continued on page 7)

John K. Lowell

Proposed New EDS Initiatives for 2008 Cost

$10KHold a GOLD Conference at IEDM

Increase Chapter Subsidy Budget $20K

Increase Budget for DL & SRC Development to Support Mini-Colloquia $25K

Increase budget for Expert Now Program $40K

Develop Student CD/DVD Career Guide $10K

Digitize EDS Conference Legacy Material to Be Added to IEEE Xplore $20K

Conduct Member Survey on Emerging Technical Areas $15K

Total Cost $140K


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The 38th IEEE SemiconductorInterface Specialists Conference(SISC) will be held December 6-8,2007, at the Key Bridge Marriott inArlington, VA, immediately prior tothe IEDM. The Key Bridge Marriottoverlooks the nation's capital andGeorgetown from the Virginia sideof the Francis Scott Key Bridge,and is only minutes from Washing-ton, D.C. The SISC is a workshop-style conference that provides aunique forum for device engineers,solid-state physicists, and materi-als scientists to openly discussissues of common interest. Princi-pal topics for discussion at SISCare semiconductor/insulator inter-faces, the physics of insulating thinfilms, and the interaction amongmaterials science, device physics,and state-of-the-art technology.

An important goal of the con-ference is to provide an environ-ment that encourages interplaybetween scientific and technologi-cal issues. Invited and contributedtalks, as well as a lively postersession, are presented in an infor-mal setting designed to stimulatediscussion, and conference partic-ipants enjoy numerous opportuni-t ies for social gatherings withleading researchers and experts inthe field. The conference alter-nates between the east and westcoasts, and meets just before theIEDM to encourage the participa-tion of IEDM attendees.

Conference focusThe program includes approxi-mately 50 talks from all areas ofMOS science and technology. Thetopics evolve with the state-of-the-art, and include but are notlimited to the following:

• physics of thin dielectrics andtheir interfaces

• gate-dielectric conduction andbreakdown

• alternative and high-k gate dielec-tric materials and metal gates

• nitrogen-containing oxides andstacked interfaces

• physical and electrical charac-terization of Si/SiO2 interfaces

• micro-roughness measurement,modeling, and device-related effects

• hot carrier, plasma damage andradiation effects

• surface cleaning technologyand effects on dielectrics andinterfaces

• theory of oxide and interface defects• silicon carbide and its interfaces• insulators on Ge and III-V materials • ferroelectric layers and stacks

on semiconductors

Invited presentationsThis year’s invited presentationswill include • D r . G e n n a d i B e r s u k e r ,

SEMATECH, USAReversible and irreversibleinstabilities in high-k/metalgate stacks

• Prof. Torgny Gustafsson, RutgersUniversity, USA

Structure and composition ofhigh-k fi lms on alternativechannel materials

• Prof. Marc Heyns, IMEC, BelgiumGe and III/V: the CMOS of thefuture

• Prof . Hyunsang Hwang ,GIST, Korea

Resistance switching charac-ter is t ics of doped metaloxide for nonvolatile memo-ry applications

• Dr. Kingsuk Maitra, AMD, USAElectron Transport in Bulk-SiNMOSFET's in presence ofhigh-k gate insulator - ChargeTrapping and Mobility

• Prof. Seiichi Miyazaki, HiroshimaUniversity, Japan

Photoemission study of Met-

al/High-k Dielectric Gate Stack • Prof. Alfredo Pasquarello, EPFL,

SwitzerlandFirst Principles Investigationof Defects at Semiconductor-Oxide Interfaces

Unique poster sessionA unique feature of SISC is theattention paid to the poster presen-tations. Each author of a poster pre-sentation has the opportunity tointroduce their work orally, using 2-3visuals, to the entire SISC audienceduring special poster introductionsessions. The posters are then pre-sented during a separate posterreception on Thursday evening.

Student participationencouraged SISC is a popular conference with stu-dents, who can get immediate andcandid feedback on their latest resultsfrom the experts in the field. In addi-tion to a strongly reduced registrationfee for students, a Best Student Pre-sentation award is given every year inmemory of E.H. Nicollian, who mademany important contributions to thefield and had a strong presence with-in the SISC.

Accompanying programThe scientific content of the confer-ence is complemented by informalevents designed to encourage livelydiscussion and debate. Hospitalitysuite with complimentary drinks isavailable to attendees to continuetheir discussions on every eveningof the conference. Friday afternoonhas no scheduled talks, to allowtime to meet informally, relax, orvisit local Washington D.C. attrac-tions. On Friday evening the confer-ence hosts a banquet and awardsceremony, complete with the now-famous (and always riotous) limer-ick contest. The limericks never failto give the conference presenta-tions, people and events an entirelynew perspective!

Upcoming Technical MeetingsUpcoming Technical Meetings2007 IEEE Semiconductor Interface

Specialists Conference (SISC)2007 IEEE Semiconductor Interface

Specialists Conference (SISC)

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SISC is always a rewarding experi-ence for specialists, students, as wellas newcomers to the field. For moreinformation about the conference, to

consult its program and to register,please visit http://www.ieeesisc.org.We hope you will include SISC inyour IEDM itinerary.

Dina Triyoso2007 SISC Arrangements Chair

Freescale Semiconductor Inc.Austin, Texas, USA

The IEEE International ReliabilityPhysics Symposium (IRPS) will be heldat Phoenix Civic Plaza Convention Cen-ter/Hyatt Regency Phoenix at CivicPlaza, Phoenix, Arizona, from April 27to May 1, 2008. For over 40 years, IRPShas been the premiere conference forengineers and scientists to presentnew and original work in the area ofmicroelectronic device reliability.

Originally started in the early 1960’sby the military and aerospace commu-nity, IRPS is now co-sponsored by theIEEE Reliability Society and the IEEEElectron Devices Society. This co-spon-sored event has drawn participantsfrom the United States, Europe, Asiaand all other parts of the world. IRPS2008 promotes the reliability and per-formance of integrated circuits andmicroelectronic assemblies through animproved understanding of failuremechanisms in the user’s environ-ment, while demonstrating the lateststate-of-the-art developments in elec-tronic reliability.

The focus of the symposium is the3-day plenary/parallel sessions featur-ing original work that identifies newmicroelectronic failure or degradationmechanisms, improves understandingof known failure mechanisms, demon-strates new or innovative analyticaltechniques, or demonstrates ways tobuild-in reliability.

Specific areas to be addressedduring the 2008 IRPS are reliabilityconcerns associated with silicon(integrated circuits, discrete devices,MEMS), non-silicon (GaAs, LEDsand diode lasers, optical fiber andflat panel displays), and emergingtechnologies including organic elec-tronics and nanotechnology:

• Product Reliability and Burn-In• Non-Volatile Memory• Qualification Strategies• Circuits and Systems

• Soft Error Effects• Assembly and Packaging• Failure Analysis• Transistors• High Power Devices• Devices and Processing• Interconnects• Device Dielectrics• ESD and Latch-Up• Process Induced Damage• MEMS• Nanoelectronics Device Reliability

Other opportunities at the sympo-sium include:

• A 2-day Tutorial Program fea-turing a set of bound notes from alltutorials. Attendees have the oppor-tunity to learn a new area in sometechnical depth from an industryexpert or brush up on the funda-mentals with introductory tutorials.There are typically about 20 tutori-als that are offered on topics rang-ing from back-end reliability to gatedielectric and transistor reliability tocircuit/product reliability to assembly/packaging reliability.

• Reliability Year-In-ReviewSeminar. This seminar provides asummary of important work pub-lished from the previous year in keyreliability areas. Industry expertsserve as the “tour guide” and saveyou time by collecting and summa-rizing this information to bring youup to date in a particular area asefficiently as possible.

• Evening Session Work-shops enhance the synergy of thesymposium by affording the atten-dees an opportunity to meet ininformal groups to discuss key reli-abi l i ty physics topics with theguidance of experienced modera-tors. Some of the workshop topicsare directly coupled to the tutorialprogram to allow more discussionon a particular topic.

• Equipment Demonstrationsheld in parallel with tutorials andtechnical sessions are a uniqueaspect of this symposium. Manufac-turers of state-of-the-art analyticaland test and stress equipment are onhand to demonstrate their productsand systems to individuals and smallgroups. Attendees are encouraged tobring samples or questions for on-site analysis and discussion.

• An Evening Poster Session hasbecome an important part of the IRPSfor authors and attendees to discussrecent research and results in a veryinteractive environment.

There are lots of opportunities tobe involved in increasing yourunderstanding of this technicallyimportant field.

We look forward to seeing you inPhoenix!

For further information, please vis-it the IRPS web site at www.irps.orgor contact Dr. John Suehle, the IRPS2008 General Chair, by email,[email protected].

John Suehle2008 IRPS General Chair

NISTGaithersburg, MD, USA

The 24-acre Phoenix Convention Center, in theheart of Copper Square, will be the home of the

46th Annual IRPS. A $600 million expansionelevated Phoenix's convention center into the

top 20 in North America

2008 IEEE International ReliabilityPhysics Symposium (IRPS)

2008 IEEE International ReliabilityPhysics Symposium (IRPS)

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pany; an Emerging Technology Ses-sion focused on the crucial topic ofenergy; a revamped Tuesday eveningpanel session/program track; insight-ful invited plenary talks; two ShortCourses; the presentation of presti-gious IEEE/EDS awards; and the out-standing technical program.

Short CoursesTwo Short Courses will be offeredon Sunday, December 9 before theconference begins. They are “Per-formance Boosters for AdvancedCMOS” and “Emerging Nanoelec-tronics.” They will be presented byexperts in the fields. Lectures willstart with introductory material forthe general audience and progresstowards description of the latestdevelopments. Attendees will havethe opportunity to learn aboutemerging new areas and importantdevelopments. Advance registrationis required.

Plenary PresentationsThis year’s Plenary presentations willbe given by:• Hiroyuki Sakaki, Toyota Technologi-

cal Institute, on the roles of quan-tum nanostructures in the evolutionand future advances of electronicand photonic devices;

• Larry Hornbeck, Texas Instruments,on DLP status and outlook;

• Claus Schmidt, Robert BoschGmbH, on automotive electronics

Evening Panel DiscussionsOn Tuesday evening, December11, the IEDM will offer one eveningPanel Discussion on the topic,“Looking for a New Switch - a PipeDream or is there Gold at the Endof the Rainbow?” plus a specialprogram track on Circuit-Technolo-gy Interaction and Design for Man-ufacturability.

Emerging Technology SessionIEDM 2007 will feature a special ses-sion on Tuesday, December 11 withpapers focused on energy-harvestingelectron devices.

Technical ProgramThis year’s technical areas of cover-age are:

• CMOS Devices• CMOS and Interconnect Reliability• Displays, Sensors and MEMS• Integrated Circuits and Manu-

facturing• Modeling and Simulation• Process Technology• Quantum, Power and Compound

Semiconductor Devices• Solid State and Nanoelectronic

Devices

CMOS Devices sessions will coverbreakthroughs and advancements indevice physics; novel MOS devicestructures (such as multiple-gate andnon-planar FETs); circuit/device inter-action and co-optimization; CMOSscaling issues; high-performance,low-power and analog/RF devices;SOI; high-mobility channel devicessuch as strained silicon and SiGeMOS devices; noise behavior of MOSstructures and device measurementsand characterization.

CMOS and Interconnect Reliabilitysessions will cover all areas of relia-bility for both the front- and back-end of the process. Topics willinclude but are not limited to hotcarriers; gate dielectric wear-out andbreakdown; process charging dam-age; latch-up, ESD and soft errors;bias temperature instabilities; relia-bility of high-k and low-k materials,circuits and packaging; interconnectreliability, electromigration, and theimpact of back-end processing ondevices; manufacturing technologiesfor reliability; physics of failureanalysis; and reliability issues formemory and logic technologies.

Displays, Sensors and MEMS ses-sions will cover critical devices, struc-tures and integration for imaging,displays, detectors, sensors, andMEMS. A subset of key topics wouldinclude CMOS imagers; CCDs; TFTs;organic, amorphous and polycrys-

talline devices; vacuum microelec-tronics; emissive displays; and sen-sors for chemical, molecular andbiological detection. MEMS topicsinclude resonators, switches and pas-sives for RF applications; integratedsensors; micro-optical, micro-fluidicand biomedical devices, and micro-power generators. Particular empha-sis will be placed on integratedimplementations. Other relevant sub-jects include design, fabrication, relia-bility, theory and modeling.

Integrated Circuits and Manufac-turing sessions will focus onadvances in integrated circuits tech-nology; full process integration formemory, logic and mixed-mode(SOC) applications; and manufactur-ing. Areas of interest include processarchitecture for performance andmanufacturing, high-speed logic,advanced memories and multifunc-tion integrated circuits; and integrat-ed passives, low-power, low-noise,analog, RF and mixed signal ICs. Top-ics also include IC manufacturingtechnology and methodology, 3-Dintegrated circuits, process control,yield enhancements and modeling.

Modeling and Simulation sessionswill discuss all areas of analytical,numerical, and statistical approachesto the modeling of electronic, opticaland multiphysical devices, their isola-tion and interconnection. Topicsinclude physical and compact modelsfor devices and interconnects, andthe modeling of fabrication processesand equipment, including simulationalgorithms, process characterization,parameter extraction, early compactmodels for advanced technologies;performance evaluation and technol-ogy benchmarking methodology.Submissions should advance themodeling and simulation art or applyexisting techniques to gain newinsights into devices.

Process Technology sessions willcover front- and back-end processmodules for fabrication of logic,

(continued from page 1)

2007 IEEE International Electron Devices Meeting (IEDM)2007 IEEE International Electron Devices Meeting (IEDM)

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memory and 3-D integrated circuits.Front-end topics will include sub-strate technologies; lithography;etching; isolation; thin dielectrics;high-k materials and metal electrodesfor transistors and MIM capacitors;shallow junctions; silicides; self-assembly techniques and new mate-rials. Back-end topics will includeconductor systems; low-k materials,contact and via processes; barriermaterials; planarization, design con-siderations for multi-level intercon-nects, and advanced packaging.

Quantum, Power and CompoundSemiconductor Devices sessionswill cover compound semiconduc-tors with electronic and optoelec-tronic device applications (e.g.GaAs, InP, GaN, SiC, SiGe, anti-monides and related alloys). Papersalso will discuss discrete and inte-grated high-power/current/voltagedevices including those on silicon.Topics will include FETs, HBTs,LEDs, lasers, external modulators,and high-power and compound RF

and millimeter-wave devices. Also,devices with ballistic and quantumeffects; spintronics, optoelectronicICs, optical interconnects; photonicbandgap structures and crystals, andintegrated RF components includinginductors, capacitors and switches.

Solid State and NanoelectronicDevices sessions will focus onnovel solid state and nanoelectronicdevices such as novel memorycells; nanoelectronic devices includ-ing nanotubes, nanowires, andquantum dots; devices for bioelec-tronic applications; spintronicbased devices; NEMS-based logicand memory devices; moleculardevices and new device characteri-zation and performance evaluationmethodologies.

For registration and other informa-tion, visit the 2007 IEDM home pageat www.ieee.org/conference/iedmor contact Conference ManagerPhyllis Mahoney, 16220 S. FrederickAve., Gaithersburg, MD 20877,

USA; tel. (301) 527-0900, ext. 103;fax (301) 527-0994; or email: [email protected]. The submis-sion date for regular papers hasalready passed, but a limited num-ber of Late-News Papers will beaccepted for presentation until Sep-tember 14, 2007. A “How to writefor the IEDM” article can be found athttp://www.his.com/~iedm/call/authorguide.doc

The Washington, D.C. area pro-vides many attractions for visitorsand we encourage attendees toexplore them in the off hours of theconference. The IEDM committeemembers look forward to seeing youin December.

Meikei Leong2007 IEDM Publicity Chair

TSMCHsinchu, Taiwan

Kazunari Ishimaru2007 IEDM Publicity Vice Chair

ToshibaYorktown Heights, NY, USA

(continued from page 3)


offerings of IEEE’s Expert Now ShortCourses, coordinated the efforts ofthe Regions & Chapters program torevitalize the Chapter Partners pro-gram, and continued solicitation of allEDS Fellows and AdCom members tobecome Distinguished Lecturers. Withmanuscript handling, Bill’s group con-tinued to define the specifications onEDL manuscripts entered andreviewed on the web using ManuscriptCentral, coordinated implementationof a new electronic service whichallows EDS members to submit techni-cal questions called “QuestEDS”,updated the “Information for Authors”document for T-ED, EDL, & T-DMR,and investigation of establishing asociety office-wide user focus groupfor publication manuscript handling.

Vice-President and Technical Reports Albert Wang, Membership V-P,reported that as of October 2006, EDS

membership stands at 10,780 mem-bers, down from an 11,219 total at theend of 2005. In total, 6,637 are regularmembers, 3,336 are permanent mem-bers, 782 are students, and 25 remainaffiliate members. The demographicscan be seen in the first table.

He reviewed his group’s effortsat recruitment such as conferenceonsite credit vouchers, distributionof promotional material at EDS sup-ported conferences, TIP mailing,promotional material for Senior

Member (SM), coordination of theMembership Fee Subsidy Program,and membership promotion by Dis-tinguished Lecturers. Albert alsoreviewed an aggressive l ist ofaction items for membershipincluding distribution of an applica-tion/member benefit brochure torecruit members, students, andaffiliates, giving out appreciationplaques to hosts of an EDS officervisit. He also updated the AdComon results from focus visits to China

EDS Membership Demographics (as of 10/31/06)

IEEE Region Count% ofTotal

1-6 (United States) 5,945 53.1

7 (Canada) 180 1.7

8 (Europe, Middle East, & Africa) 1,883 17.5

9 (Latin America) 168 1.6

10 (Asia Pacific) 2,604 24.1

Total 10,780 100


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and India, Senior Member statistics,and recent numbers showing thatIEEE membership in 2006 increasedby 2% while society membershipsdeclined by an average of 2.5%. Inthe near future, Albert and his com-mittee plan to address membershipissues in Regions 1-6 & 8, increasepromotion in emerging semicon-ductor manufacturing locationssuch as India and China, possiblyVietnam as well, and work on theproposed “EDS Member” confer-ence fees.

Renuka Jindal, Publications V-P,discussed circulation and financialnumbers for both T-ED & EDL, thefinancial status of T-DMR, andenhanced member benefits stimulat-ed by the EDS Archival CD, the annu-al DVD Update Package, the newQuestEDS query system, digitizationof EDS Short Courses on CD/DVD,and electronic delivery of customized“Table of Contents” from EDS publi-cations and conferences. Renuka also

reviewed the updated EDS Field ofInterest Statement.

Paul Yu, Education V-P, citedDistinguished Lecture (DL) statisticsindicating that both the number of lec-turers (152) and number of scheduledlectures (in 2006) increased significant-ly. Many chapters are holding Mini-Colloquia, mixed with DL’s, toencourage attendance and participa-tion. His group continues to encourageelected Fellows to become DL speak-ers. Of the 23 new fellows elected thisyear, 9 have agreed to serve as speak-ers. A new initiative was introduced fora 2007 EDS GOLD member conferenceto include a guest speaker, and discus-sion and networking sessions to beheld on December 9th prior to IEDM asa way to stimulate and encourage par-ticipation. Cary Yang reported that 56Fellow nominations have beenreceived for election in 2007. PastPresident, Hiroshi Iwai, encouragednominations for the 2007 AdCom elec-tions in December. Nanotechnology

Technical Committee Chair, EdwinKan, reviewed past issues betweenthe committee, the IEEE Nanotechnol-ogy Committee (NTC) and EDSAdCom over the IEEE NanotechnologyMagazine (published by the NTC). InDecember EDS AdCom supportedfunds to support this publication whichwas not supported by the NanotechTechnical Committee. The TechnicalCommittee has chosen not to respondto this controversy. Instead, the com-mittee plans to strengthen the tiesbetween all three groups by nomi-nating EDS representation on theNTC, and encouraging participationareas such as individually address-able nanoscale electronic devices,nanoscale geometry and materialsthat enable better functionality, effi-cient modification of manufacturingprocess, new switching principlesbased on promising nanoscalephysics, theory and physical models,and basic circuit implementations(design).

Closing Reports and Summaryof AdCom ActionsThe meeting closed with reports fromthe IEEE Beijing Office, and the SRCChair for Northwest America, Paul Yu,discussed the Regions 4-6 ChaptersMeeting in December 2006, revisionof committee membership, a mini-colloquia held in Santa Clara Valley,and the 2007 IEEE Workshop onMicroelectronics and Electron Devicesheld by the ED Boise Chapter. He alsoreviewed plans to visit chapters inRegions 4-6 and plans to hold morecolloquia within the SRC NAW region.

Ning Hua, Director of theBeijing Office, explained the rea-soning for the establishment of theOffice and the current services beingoffered along with future plans.

Only the approval of the Decem-ber 2006 meeting minutes were vot-ed on and approved at this session ofAdCom. The next meeting of EDSAdCom will be on Sunday, December9, 2007 in conjunction with the 2007IEDM in Washington, D.C. at theWashington Hilton & Towers Hotel.

John K. LowellEDS Secretary

Lowell ConsultingDallas, TX, USA

The EDS Spring 2007 AdCom Meeting, June 3, at Xijao Hotel in Beijing, China

Attendees of the 2007 Spring AdCom Dinner, held at Tingliguan Imperial Tingli Hall (Pavilionfor Listening to the Orioles), Summer Palace, Beijing, China

14eds04.qxd 9/7/07 3:26 PM


Society NewsSociety News

We are pleased to inform our EDSmembers that Bill Van Der Vort, ourExecutive Director since 1990, is therecipient of the 2007 IEEE Eric Herz Out-standing Staff Member Award. Thisaward is given annually by the IEEEBoard of Directors, and is named inhonor of Eric Herz, who had a long andillustrious career as both a volunteerand staff member of the IEEE. Theaward is presented for demonstratedcontributions over a long period oftime by a present or past full time staffmember. This award carries a cashhonorarium and covers travel expens-es to the award ceremony at the nextIEEE Board of Directors meeting inBoston, MA on November 16.

Those of us who have workedclosely with Bill appreciate what adelight it is to be his colleague. Hiswillingness to take on new tasks, initi-ate new programs and volunteer sug-gestions makes the position of an EDSvolunteer a rewarding activity. All EDSmembers should be proud of our

Society’s outstanding reputation,much is due to Bill’s dedication to ourmembers. He has helped to initiateand provide support for numerousprograms including increasing ourmembership, increasing our globalpresence, achieving rapid turn aroundtime for our journals, creating ourarchival DVD, stimulating the creationof new journals, supporting the man-agement of our conferences, and cre-ating the Newsletter and Directory. Hiscan-do attitude influences EDS volun-teers and his outstanding staff, whohave the highest regard for him. Ihave attended IEEE TAB meetingswhere I have heard words such as,“Do it the way EDS does it.” That is atribute to Bill and his influence on EDSand IEEE activities. This award is richlydeserved.

Alfred U. Mac RaeVice President, EDS Awards

Mac Rae TechnologiesBerkeley Heights, NJ, USA

William F. Van Der Vort IIExecutive Director

IEEE Electron Devices Society wins the 2007 IEEE Eric Herz

Outstanding Staff Member Award

2007 - William F. Van Der Vort

“For leadership, management and strategicplanning that have contributed to the IEEE

and the Electron Devices Society”

William F. Van Der Vort IIExecutive Director

IEEE Electron Devices Society wins the 2007 IEEE Eric Herz

Outstanding Staff Member Award

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This is a reminder for EDS members to vote in the 2007 IEEE Election for the following positions and candidates.Listed below are the positions and candidates that will appear on the 2007 IEEE Annual Election ballot.

IEEE Annual Election -Did You Vote Yet?

Petition CandidatesThere are no petition candidates for any elective position in the 2007 IEEE Annual Election.

Completed ballots must be received by noon U.S. Central Time (17:00 Greenwich Mean Time) on 1 November.Members can also access the ballot and related materials electronically. To learn more, visit the election site athttp://www.ieee.org/elections.

IEEE Annual Election -Did You Vote Yet?

Position Candidates

IEEE President-Elect, 2008 Marc T. Apter (Nominated by IEEE Board of Directors)Pedro A. Ray (Nominated by IEEE Board of Directors)John Vig (Nominated by IEEE Board of Directors)

Region 1 Delegate-Elect/ Babak D. Beheshti (Nominated by Region 1)Director-Elect, 2008-2009 Charles P. Rubenstein (Nominated by Region 1)

Region 3 Delegate-Elect/ Eric S. Ackerman (Nomin ated by Region 3)Director-Elect, 2008-2009 Donald W. Hill (Nominated by Region 3)

Clarence L. (Lee) Stogner (Nominated by Region 3)

Region 5 Delegate-Elect/ Donald Dunn (Nominated by Region 5)Director-Elect, 2008-2009 Stuart A. Long (Nominated by Region 5)

Sandra (Candy) L. Robinson (Nominated by Region 5)

Region 7 Delegate-Elect/ Robert L. Anderson (Nominated by Region 7)Director-Elect, 2008-2009 O. (Om) P. Malik (Nominated by Region 7)

Hilmi M. Turanli (Nominated by Region 7)

Region 8 Delegate-Elect/ Józef W. Modelski (Nominated by Region 8)Director-Elect, 2008+ Jaafar M. Al-Ibrahim (Nominated by Region 8)

Region 9 Delegate-Elect/ Enrique S. Draier (Nominated by Region 9)Director-Elect, 2008-2009 Gustavo A. Giannattasio (Nominated by Region 9)

Tania L. Quiel (Nominated by Region 9)

Standards Association W.C. (Chuck) Adams (Nominated by Standards Assoc.)President-Elect 2008 Forrest D. (Don) Wright (Nominated by Standards Assoc.)

Standards Association Lester F. Eastwood (Nominated by Standards Assoc.)Board of Governors Member-at-Large, Steve M. Mills (Nominated by Standards Assoc.) 2008-2009

Standards Association Richard H. Hulett (Nominated by Standards Assoc.)Board of Governors Member-at-Large, T.W. (Ted) Olsen (Nominated by Standards Assoc.)2008-2009

Technical Activities Harold L. Flescher (Nominated by Technical Activities)Vice President-Elect, Robert (Bob) C. Rassa (Nominated by Technical Activities)2008

IEEE-USA President-Elect, Gordon W. Day (Nominated by IEEE-USA)2008 Gregg L. Vaughn (Nominated by IEEE-USA)

IEEE-USA Member-at-Large, Gary L. Blank (Nominated by IEEE-USA)2008-2009 Jean M. Eason (Nominated by IEEE-USA)

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As of December2006, the tota lnumber of EDSmembers was10780. Whi lem e m b e r s h i prelated activitieshave been strongin 2006, we unfor-tunately saw adecline in total

EDS membership of -3.9% from 2005.In 2006, total IEEE membershipincreased by 2% to 374,767, fueled by astrong 9% increase in student member-ship that accounts for more than 20%of the total IEEE membership; while inthe meantime, IEEE society member-ships decreased by -2.5% on average.Apparently, almost all IEEE societieshave been experiencing the south-bound trend in membership develop-ment (Table 1). However, it does makesense for us to understand the plainstatistics a little better and to extractany useful hints. An often-heard argu-ment to explain the membership losesin recent years has been that, with thevaluable e-library available online andsubscribed by employers, people havelittle motivation to join IEEE becausethe discount for technical article sub-scription has long been regarded asthe major benefit for being an IEEEmember. Yet the IEEE membershipcount indeed increased in 2006 and thenorth-bound trend seems to continuein 2007 so far. This suggests that peo-ple still see the benefits of being anIEEE member in the internet era: careernetworking, professional prestige, andconference fee discount, etc., to namea few. Hence, there should be a moti-vation and room for membershipgrowth. During the 2007 IEEE Member-ship Development Retreat held at theIEEE Headquarters, May 4-5, therewere discussions about whether weneed to worry about losing ground inSociety membership at a time whenIEEE membership development contin-ues to be positive. Yet, the reality isthat IEEE is a technical society and ALLvaluable IEEE technical activities, whichare the main reason for people to joinIEEE, are organized by different techni-

cal societies and their members. It ishard to believe that a weak and/or dis-appearing technical society can main-tain active technical activities. Thetechnical societies are always the foun-dation of IEEE. The opposite member-ship development trends in IEEE as awhole and its technical societies maysuggest that the IEEE umbrella is takingaway the most meaningful member-ship benefits from its technical soci-eties, for which these technicalsocieties are doing all the real work inmotivating people to join IEEE. Forexample, one key membership benefitis the sizable conference registrationfee discount. However, IEEE-onlymembership already qualifies for allthe conference fee discounts with zeroextra benefit for being an IEEE techni-cal society member in this regard. Butit is the technical societies and theirvolunteers who are organizing all theseattractive technical conferences andevents. Unfortunately, the current one-tier IEEE conference fee discount policycertainly discourages people to joinIEEE technical societies in this regard.Another interesting observation fromthe membership statistics in Table 1 isthat, while almost all technical societiessuffer from membership countdecrease, the Power Engineering Soci-ety did enjoy a healthy increase of 5.2%in membership development and thispositive trend remains true into 2007.The discussion with representativefrom PES during the IEEE MD Retreatmeeting revealed that PES does havesome active membership developmentactivities, such as, annual chapter com-petition for new member recruitmentwith financial incentive, etc. On the oth-er hand, it is believed that the recentenergy crises (high energy costs andfragile power grid networks) anddemand for both alternative energyand reliable energy distribution solu-tions may be a key driving force attract-ing people to the PES field. Thisunderstanding certainly suggests onething to us at EDS, which is, one wouldreally be motivated when feeling theneeds, technically and/or for careerwell-being, of joining a professionalsociety. PES it seems, quickly grasped

the opportunity of global alternativeenergy demand and took swift actionto position itself in the right spot ofbeing the most qualified professionalsociety for exploring solutions to thenew energy challenges. The new tech-nical challenges and demand for solu-tions translate into new careeropportunities, which certainly is a com-pelling reason for people to join theright society. In this regard, the EDScertainly has been exposed to similaropportunities in recent years, for exam-ple, both MEMS and nano thrusts, toname a few. These two emerging tech-nology fevers seem to be excellentopportunities for EDS to offer excitingand compelling incentives for peopleto join the society, should they feel thatthe EDS is the right technical society tobe with in dealing with these emergingtechnical challenges and being reward-ed with new career opportunities.Unfortunately, it seems that other tech-nical societies have taken the buzzwords of MEMS and Nano more suc-cessfully when facing the new opportu-nities. Did EDS take actions quickly andforcefully enough to convince peoplethat EDS is the society where oneshould be to deal with the emergingtechnical challenges and to seek newcareer opportunities? After all, techni-cal interests and career developmentmay be the most critical reason forpeople to join a professional society!We shall certainly think more creativelyand act accordingly in our EDS mem-bership development planning.

In 2006, the Membership Commit-tee had been working hard and collab-orating with the Regions/ChaptersCommittee and the Education Commit-tee to promote EDS membership. Wecontinued the new on-site MembershipCredit Voucher promotion at the annu-al IEDM that rewarded us with a netgain of 122 new members (49 IEEE &EDS members, 39 EDS-only membersand 34 renewal EDS members). NewEDS membership promotional packetswere provided to Distinguished Lectur-ers for local distribution during their DLvisits to chapters. The EDS Member-ship Fee Subsidy Program (MFSP) con-tinues to work well in 2006, which

Report from the EDS Vice-President of Membership

Albert Z.H. Wang

Report from the EDS Vice-President of Membership

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I would like to startthis article off witha sincere thankyou to Mark Lawfor his leadershipand vision as thepast EDS VicePresident for Tech-nical Activities.Mark made sub-

stantive changes to the structure andoperations of EDS Technical Activitiesand I would like to outline some ofthese, and indicate how my efforts willbuild upon his vision and activities.

Mark was the first to suggest thestreamlining of EDS conferences andwas successful in working with theEDS V-P of Meetings to merge and/orco-locate complementary meetings.

This effort provides improved opera-tions and financial efficiency for EDS,and also benefits the conferenceattendee offering greater variety andtechnical information in a single con-ference trip.

Mark also initiated the processof a more formal review of confer-ences and the more active engage-ment of the technical committee

Report from the EDS Vice-President ofTechnical Activities

subsidizes IEEE and EDS membershipsfor individuals who have an annualincome lower than US$12,600, with 15Chapters and 166 members being ben-efited from the MFSP program in 2006.The MFSP initiative proves to be anefficient way to help jump-start a newchapter and we will continue this pro-gram as long as EDS maintains healthy

finances. EDS continues the effort incoordinating the EDS Senior MemberProgram to encourage EDS membersto apply for Senior Membership. In thiseffort, EDS sent emails to approximate-ly 6,000 members with the grade of‘M’, encouraging them to apply forSenior Member grade and as a result172 EDS members were promoted to

Senior Member grade in 2006. EDS willkeep this Senior Membership promo-tion effort because it is critical to main-tain the member interests in thesociety. Moving into 2007, while keep-ing our existing successful member-ship development activities, we areactively exploring creative new incen-tives for EDS membership drives. Anew EDS Membership Committee willbe in place soon, which will ensure abalanced representation of the Soci-ety’s global presence and will furtherstrengthen our volunteer workforce inemerging regions. Globalization of theelectronics industries is an irreversiblereality, which is already clearlyobserved in the statistics. For example,EDS member count percentage contin-ues to decrease in North America,while increasing overseas, particularlyin Region 10, which is rapidly becom-ing a global electronic R&D and indus-trial hub. Our Society ought to adjustour strategy to enhance our presencein emerging regions, while holdingground in the traditional areas. We arecurrently working on a proposal for atwo-tier IEEE conference registrationfee discount program, which will giveEDS members a significantly deeperdiscount than non-IEEE/EDS membersfor EDS sponsored conferences. Wekindly call for any suggestions, cri-tiques, and particularly, volunteerinvolvement from all society membersto address the challenges that we arefacing and to strengthen EDS.

Albert Z.H. WangEDS Vice-President of Membership

University of California, RiversideRiverside, CA, USA

Table 1. IEEE and Society Membership Statistics

Entity/Member Type# of Members

Dec. 2006% fr om

Dec. 2005

Total Society Memberships 337,755 -2.5%

- Circuits & Systems 11,040 -3.6%

- Communications 41,016 -2.3%

- Components, Packaging &Manufacturing Tech.

2,927 0.5%

- Computer 86,057 -9.1%

- Lasers & Electro-Optics 7,238 -4.9%

- MicrowaveTheory & Techniques 11,651 -1.7%

- Power Engineering 22,445 5.2%

- Reliability 1,937 -2.4%

- Signal Processing 15,155 -1.6%

- Solid-State Circuits 11,724 -2.6%

Total EDS Membership 10,780 -3.9%

- EDS Members 6,637 -.35%

- EDS Permanent Members 3,336 -11.0%

- EDS Student Members 782 -0.1%

- EDSAffiliates 25 -16%

Total IEEE Membership 374,767 2.0%

- IEEE Higher Grade 294,276 0.3%

- IEEE Students 80,491 9.0%

April S. Brown

Report from the EDS Vice-President ofTechnical Activities

14eds04.qxd 9/7/07 3:26 PM


chairs in meeting support, especial-ly for those conferences EDS finan-cially co-sponsors, and oversight.With his initiation, we are alsoimplementing a more comprehen-sive conference review process, inwhich technical committees willreview the vitality of the meeting -both in member interest and infinancial health - to insure we areproviding support to those areas ofmost interest to EDS membership.

In addition, Mark made a numberof changes to the technical commit-tee chairs and in the chart below, wehave a listing of the current technicalcommittees and chairs. Note thatthere are currently 14 technical com-mittees and the technical areas havebeen identified to best capture theneeds of the EDS membership. Weare continually reviewing these com-mittees and looking for partnershipswith other societies and IEEE entitiesto bring the most varied and timelytechnical information to our member-ship. Finally, Mark also championed-and this planning activity continues-the formation of a new meeting tocapture emerging areas in EDS.

I plan to build on this last activityinitially through a comprehensive EDS

member survey. This activity willallow us to get direct feedback fromyou- the EDS member- on emergingtechnical areas of interest and how wecan best provide technical informationto you. In addition, we will also learnof areas that are considered matureby the membership and therefore willbe of less interest as the core of EDStechnical products. The survey will beconstructed to provide input to Tech-nical Activities, Meetings, and Publica-tions- given the common core mission

of each of these areas in communicat-ing new technical information to themember.

We plan to launch the survey earlynext year and we look forward to yourfeedback on new and emerging techni-cal areas of interest.

April S. BrownEDS Vice-President of

Technical ActivitiesDuke University

Durham, NC, USA

Committee ChairCompact Modeling Samar SahaCompound Semiconductor Devices and Circuits Supriyo BandyopadhyayDevice Reliability Physics Anthony S. OatesElectronic Materials Judy L. HoytMicroelectromechanical Systems Chang LiuNanotechnology Edwin C. KanOptoelectronic Devices Shaya FainmanOrganic Electronics Ananth DodabalapurPhotovoltaic Devices Dennis J. FloodPower Devices and ICs Toshiaki YachiSemiconductor Manufacturing Robert R. DoeringTechnology Computer Aided Design Enrico SangiorgiVacuum Devices Dan M. GoebelVLSI Technology and Circuits Bin Zhao

EDS Technical Committee

The technicalcommittee onc o m p o u n ds e m i conductordevices and cir-cuits is con-cerned with allaspects of elec-trical engineer-ing related to thetheory and appli-cation of com-

pound semiconductors to devicesand circuits. The committee co-sponsors IEEE activities related tothis sub field and generally remainsinformed of major advances madein this critical area.

Compound semiconductors dom-inate optoelectronic and magneto-electronic applications. The mostrecent foray of compound semicon-ductors is in the area of spintronics.Another burgeoning area that isreceiving focused attention isorganic semiconductors which arecarving out a niche in optical dis-play devices, particularly organiclight emitting diodes. These semi-conductors are inexpensive andcompatible with flexible substrates.

In the past few months, the Techni-cal Committee welcomed two newmembers: Prof. Yoon-Ha Jeong fromPOSTECH, South Korea and Prof. Gio-vanni Ghioni from Politecnico di Tori-

no, Italy. These two new membersadd to the global outreach of the EDS.

The Technical Committee on Com-pound Semiconductor Devices andCircuits looks forward to offering tech-nical co-sponsorships to conventions,workshops and conferences in areasrelated to compound semiconductors.Requests for such sponsorships can beaddressed to the EDS Executive Office.

Supriyo BandyopadhyayEDS Compound

Semiconductor Devicesand Circuits Technical

Committee ChairVirginia Commonwealth University

Richmond, VA, USA

EDS Compound Semiconductor Devices and Circuits Committee Report

SupriyoBandyopadhyay

EDS Compound Semiconductor Devices and Circuits Committee Report

14eds04.qxd 9/7/07 3:26 PM


2008 IEEE EDS MASTERS STUDENT FELLOWSHIPS CALL FOR NOMINATIONS

At the December 2005 EDS Administrative Committee Meeting, EDS approved a Masters level student FellowshipProgram.

Description: One-year fellowships awarded to promote, recognize, and support graduate Masters level studyand research within the Electron Devices Society’s field of interest: all aspects of engineering, physics, theory,experiment and simulation of electron and ion devices involving insulators, metals, organic materials, plasmas,semiconductors, quantum-effect materials, vacuum, and emerging materials. Specific applications of thesedevices include bioelectronics, biomedical, computation, communications, displays, electro and micro mechan-ics, imaging, micro actuators, optical, photovoltaics, power, sensors and signal processing. Five fellowships willbe awarded, with the intention of at least one fellowship being given to eligible students in each of the followinggeographical regions every year: Americas, Europe/Mid-East/Africa, Asia & Pacific. Only one candidate can winper educational institution.

Prize: US$2,000 and a certificate to the student, to be presented by the Dean or Department head of the student’senrolled graduate program.

Eligibility: Candidate must: be an IEEE EDS student member at the time of nomination; be accepted into a grad-uate program or within the first year of study in a graduate program in an EDS field of interest on a full-timebasis; and continue his/her studies at a graduate education institution. Nominator must be an IEEE EDS memberand preferably be serving as the candidate’s mentor or faculty advisor. Previous award winners are ineligible.

Basis for Judging: Demonstration of his/her significant ability to perform research in the fields of electrondevices and proven history of academic excellence in engineering and/or physics as well as involved in under-graduate research and/or supervised project.

Nomination Package:• Nominating letter by an EDS member who served as candidate’s mentor or faculty advisor.• Two-page (maximum) statement by the student describing his or her education and research interests and

accomplishments• One-page biographical sketch of the student (including student's mailing address and e-mail address)• One copy of the student’s transcripts/grades• A letter of recommendation from an individual familiar with the student’s research and educational credentials.

Letters of recommendation cannot be from the nominator.

Timetable:• Nomination packages are due at the EDS Executive Office no later than March 15, 2008• Recipients will be notified by May 15, 2008• Monetary awards will be presented by the Dean or Department Chair of the recipient's graduate program at

the beginning of the next academic term.• Nomination packages can be submitted by mail, fax or e-mail, but a hard copy must be received at the EDS Office.

Send completed package to:IEEE Operations CenterEDS Executive OfficeEDS Masters Student Fellowship Program445 Hoes Lane, Piscataway, NJ 08854 USA

For more information contact:[email protected] visit: http://www.ieee.org/society/eds/education/fellowship.xml

2008 IEEE EDS MASTERS STUDENT FELLOWSHIPS CALL FOR NOMINATIONS

14eds04.qxd 9/7/07 3:26 PM


Nicolaas Frans de Rooij ofthe University of Neuchatel,Neuchatel, Switzerland wasnamed recipient of the 2007IEEE Jun-Ichi NishizawaMedal. His citation states,“For pioneering contributionsto microsystem technologyand effective transfer intoindustrial products and appli-cations”

Dr. Nicolaas Frans de Rooijis a leading researcher in thearea of micro electro mechani-

cal systems (MEMS) in Europe, whose work led to drasticimprovements in the design and production of technologi-cal devices. His achievements have had a huge affect onmedical and space exploration technology.

Currently serving as director of the Institute ofMicrotechnology at the University of Neuchatel, Switzer-land, Dr. de Rooij built up the Sensors, Actuators andMicrosystems Laboratory (SAMLAB) as one of the first uni-versity laboratories on MEMS in Europe. Over 300 scientif-ic and technical publications and presentations in majorjournals and at international conferences have resultedfrom research done at SAMLAB. De Rooij was a key playerin the development of silicon etching technologies thatbecame the basis for forming precise microstructures usedin applications such as pressure sensors and accelerome-ters. A strong advocate of MEMS, de Rooij has madenumerous contributions to organizing international confer-ences, workshops and summits. He also has directed pro-jects that have resulted in the integration of fully functionalMEMS for sensing and control aboard the Space Shuttle’sSpace Lab. Most recently, de Rooij’s group contributed tothe production of the first micromechanical silicon-basedcomponents, such as microgears and microsprings, foruse in high-performance mechanical watches.

An IEEE Fellow, de Rooij has authored or co-authoredover 250 technical papers. Dr. de Rooij has a master’s ofscience from State University of Utrecht, the Netherlands,and a doctorate from Twente University of Technology,Enschede, The Netherlands.

Michael Shur of RensselaerPolytechnic Institute, Troy,New York, was named recipi-ent of the 2007 IEEE LeonK. Kirchmayer GraduateTeaching Award. His cita-tion states, “For inspirationalguidance of graduate stu-dents & development of nov-el teaching materials insolid-state electronics”

Michael S. Shur has beenthe Patricia W. and C. SheldonRoberts Professor of Solid

State Electronics in the Electrical, Computer, and SystemsEngineering (ECSE) Department at Rensselaer PolytechnicInstitute in Troy, N.Y. for the past 10 years. He has servedas distinguished lecturer for the IEEE Electron Devices andthe IEEE Microwave Theory and Technique Societies, giv-en tutorials at conferences worldwide, taught courses forpracticing engineers and given IEEE-sponsored lectures foracademic researchers worldwide. He has taught at the Uni-versity of Virginia, University of Minnesota, Oakland Uni-versity, Cornell University, and Wayne State Universityand conducted research at the A.F. Ioffe Institute in St.Petersburg, Russia and at IBM in Yorktown Heights, N.Y.He has published and edited many key graduate texts insolid state electronics that have been translated into manylanguages. Dr. Shur has developed new courses onadvanced semiconductor devices and novel teaching tech-niques among them, the development of a WEB RemoteLaboratory for giving students hands-on experience andallows professors from many countries to exchangecourse materials.

Michael Shur was also named co-recipient of the2007 IEEE Donald G. Fink Prize Paper Award alongwith Dr. Arturas Zukauskas for their paper entitled, “Solid-State Lighting: Towards Superior Illumination”.

Alfred U. Mac RaeEDS Vice-President of Awards

Mac Rae TechnologiesBerkeley Heights, NJ, USA

TWO EDS MEMBERS NAMED RECIPIENTSOF 2007 IEEE AWARDS

Nicolaas Frans de Rooij Michael Shur

TWO EDS MEMBERS NAMED RECIPIENTSOF 2007 IEEE AWARDS

14eds04.qxd 9/7/07 3:26 PM


The EDS Region 10 Chapters Meet-ing was held on June 3, 2007, at theXijiao Hotel in Beijing, in conjunc-tion with the EDS AdCom Meeting,first time held in China. The nearly40 attendees included chapterchairs, vice-chairs and representa-tives, and AdCom members. Twen-ty-two chapters (including 3 studentbranch chapters) presented theiractivities at the meeting. Represen-tatives from 3 chapters in formationalso attended the meeting. This istruly a fast-growing region withvery enthusiastic participants.

The meeting started with a wel-come address and opening remarksby Juin J. Liou, EDS Vice-Presidentof Regions/Chapters. Juin presentedstatistics on chapter formations invarious regions, which showed 21chapters in Region 10 under devel-opment among the total 44 poten-tial chapters in all regions. XingZhou, SRC Chair for Region 10, gavean overview of SRC-Asia & Pacific(AP), past activities, resources, aswell as plans in 2007. He briefed theattendees on the history of WIMN-ACT – Workshop and IEEE EDSMini-colloquium on NAnometerCMOS Technology – a Distin-guished Lecturer (DL) mini-colloquiaseries initiated in 2002 and hasbecome a hallmark of EDS-spon-sored events in Region 10. He alsoaddressed that the WIMNACT for-mat can also be extended to theother regions of EDS. Xing encour-aged chapter chairs to tap into theDL program to enhance their activi-

ties, in addition to various otherresources such as the Chapter Part-ners and Chapter Subsidy Programsas well as the PhD/Masters Fellow-ships. Chapters were also encour-aged to promote and work towardsreceiving the Chapter of the YearAward and write articles on theiractivities for the EDS quarterlyNewsletter. Paul Yu, Vice-Presidentof Educational Activities, alsobriefed the participants on the DLprogram and encouraged the nomi-nation of more DLs that can betterserve the need in regional activities.

The meeting was followed bypresentations from 22 chapters intwo sessions and a lively discus-sion. During the first session, 10chapters (Bangalore, Bangladesh,Bombay, Calcutta, Delhi, SRI JCE,Malaysia, Penang, Singapore,Japan) shared their activities. Afterthe break, another 9 chapters (EDSeoul, ED/SSC Seoul, Bei j ing,Hangzhou, Harbin, Hong Kong,Shanghai, Taipei, Xi’an) presentedtheir chapter activities, followed bypresentat ions from 3 studentbranch chapters (Tsinghua Univer-sity, UEST, Peking University),which brought a refreshing atmos-phere to the meeting by the enthu-siastic young students. The aim ofthe Chapters Meeting is to bringthe chapter leaders in Region 10together and, through interactionand sharing ideas, they can learnfrom one another and discuss onissues concerning their chaptersand members. This meeting

encompassed chapters with morethan 10 years of existence andexperience as well as newlyformed chapters. Many establishedchapters have their own flagshipconferences in addition to a wide-range of activities. Newly formedchapters have already been veryactive. The meeting also providedfirst-hand information and ideasfor those chapters in formation.Soon after the Region 10 ChaptersMeeting in June, there havealready been petitions to form theED Chengdu Chapter as well as thenewly formed ED/SSC/LEO West-ern Australia Chapter. During thediscussion session, participantsraised issues confronting the chap-ters and shared suggestions andsolutions. Some of the problemsfaced by chapters, such as lack ofresources for funds and DLs, wereaddressed and chapters were giv-en information on the availablechapter subsidy and DL programs;other long standing problems,such as paying membership duesin foreign currency, remain to beproblems at the IEEE level. Sug-gestions have been proposed forchapters to make flexible use ofsubsidy funds for memberships, askeeping and raising membershiphas always been a challengingtask, especially in low averageincome countries.

Through this Region 10 Meeting,we clearly see a trend of growinginterest and activities in this region.Participants expressed interest to

EDS Region 10 Chapters Meeting Summary

Participants of the Region 10 Chapters Meeting at Xijiao Hotel, Beijing, on June 3, 2007

EDS Region 10 Chapters Meeting Summary

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have more such interactions amongchapters to share ideas and experi-ences as well as technical visits.The newly established studentbranch chapters also demonstratedtheir enthusiastic and creative ideasin promoting technical and socialactivities to attract interest in EDSamong younger generations. SRC-AP has such rich resources withmany well established chaptersand many potential new chaptersunder development, and we plan tohave more interactions to promoteactivities for the EDS members inthe region.

The Chapters Meeting completedsuccessfully, with a group phototaken for all the participants. We

would like to thank the hard workby the Tsinghua University StudentBranch Chapter in the preparationof this meeting, and special thanksgo to the Chapter Chair, Chen Yang,and its advisor, Tian-Ling Ren, aswell as its honorary advisor, EDSVice-President of Membership,Albert Wang.

Xing ZhouChair SRC-AP

Nanyang Technological UniversitySingapore

Steve ChungVice-Chair SRC-AP

National Chiao Tung UniversityTaiwan


Ning Hua, Director of China Operations,IEEE, speaking on the establishment of

the new office in China

- by Felipe Della Lucia and JoãoAntonio Martino

The 3rd workshop on Semiconduc-tors and Micro & Nano Technology –SEMINATEC 2007 – was held on May17-18 at UNICAMP and organized byED South Brazil and the ED StudentChapter at UNICAMP, in collaborationwith other local institutions. Severallectures and presentations were givenby researchers, university professorsand industry members, aiming toshow and to share results obtained attheir institutions and enhance thecooperation between them.

This year, two international lectur-ers were invited. The IEEE Distin-guished Lecturer, Dr. Héctor de LosSantos, from NanoMEMS research,USA, presented a very interesting lec-ture about NanoMEMS, includingRF/Wireless MEMS, his specialty. Thesecond lecture, entitled “Fundamen-tals and Applications of Deep ReactiveIon Etching”, was delivered by MichielBlauw from the Holst Centre, TheNetherlands. The third lecture waspresented by Stanislav Moshkalev,from the Center for SemiconductorsComponents, UNICAMP, called“Micro and Nano Fabrication by

Focused Ion Beam and Inductive Plas-ma Etching Techniques”. AntonioSeabra gave a presentation about aresearch network on nanofabrication,called NANOFAB, involving differentBrazilian institutions.

A poster session with 40 paperswas held in order to expose the recentworks accomplished in the regionalresearch centers. After that, as a socialevent, a cocktail party took place inorder to welcome the participants.

Additionally, oral presentationsabout recently created Brazilian

Design Houses were given as well asa presentation about the IC BrazilProgram. A round table was heldwith industry members to discussnew industry initiatives and a paneldiscussion with government, indus-try and university representativeswas held with the title “Semiconduc-tors and the PAC (Advanced GrowthProgram)”.

More than 120 people attendedthe workshop and more details canbe found at www.ccs.unicamp.br/seminatec.

Workshop Organized by ED UNICAMP Student Chapter

and the ED South Brazil Chapter

Invited speaker Dr. Héctor de Los Santos during his lecture

Workshop Organized by ED UNICAMP Student Chapter

and the ED South Brazil Chapter

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The 12th Workshop and IEEE EDSMini-colloquia (MQ) on NAnome-ter CMOS Technology (WIMNACT-12) was successfully held in Chinain June 2007. The WIMNACT-12consisted of three MQ’s held inBeijing (MQ-1 on June 4th), Kun-ming (MQ-2 on June 7th) andShanghai (MQ-3 on June 8th) ,respectively. The three seminarsconsisted of a broad band of tech-nical topics related to nano andCMOS technologies, ranging frommaterials, process, devices, cir-cuits to systems.

MQ-1 took place at TsinghuaUniversity, Beijing, right after theEDS AdCom Meetings in Beijingon June 2nd and 3rd, concurrentlywith the 1st IEEE InternationalWorkshop on Electron Devicesand Semiconductor Technology(IEDST2007), which was technical-ly co-sponsored by the ElectronDevices Society and organized bythe IEEE Beijing Section, TsinghuaUniversity and Peking University.A r ich l is t of technical topics ,related to nano and CMOS tech-nologies, were presented by a

group of EDS Distinguished Lec-turers, including Prof. I lesanmiAdesida from University of IllinoisUrbana-Champaign, Prof . CorClaeys of IMEC, Prof. Paul Yu fromUniversity of California, Prof. XingZhou from Nanyang TechnologicalUniversity, Prof. James Kuo fromNational Taiwan University, Prof.Juin Liou from University of Cen-tral Florida, Prof. Steve Chungfrom National Chiao Tung Univer-sity, Prof. Renuka Jindal from Uni-versity of Louisiana at Lafayette,and Prof. Hiroshi Iwai from TokyoInst i tute of Technology. Otherinvited speakers who presented atthe MQ-1 were Prof. Roger Lakefrom University of California, Dr.Frank Yang from AMD, Prof. Q. Xufrom the Institute of Microelec-tronics, The Chinese Academy ofSciences, and Prof. J. Lee fromKyungpook National University.The IEDST also held two PosterSessions that hosted more than40 technical papers selected fromaround the world.

MQ-2 was held on June 7th atYunnan University, Kunming City insouthwestern China. The three EDSDL speakers who participated in theMQ-2 were Prof. Cor Claeys fromIMEC, Prof. Juin Liou from Universi-ty of Central Florida and Prof.Albert Wang from Illinois Instituteof Technology. MQ-2 was hosted bythe School of Information Scienceand Engineering, Yunnan Universi-ty, and jointly organized by theYunnan Computer Association.EDS ExCom members, Claeys, Liouand Wang also held discussionswith local professionals, led byProf. Xuejie Zhang, Dean of theSchool of Information Science andEngineering at Yunnan University,who was the host to this MQ-2event. General agreement wasmade in further exploring thedetails to establish an EDS chapterin Yunnan Province, to serve thesouthwestern part of China.

MQ-3 was held on June 8, 2007 inShanghai, China. Prof. Yuhua Cheng,the Dean of Shanghai Research Insti-


Report on the IEEE EDS Mini-Colloquiumheld in China - WIMNACT-12

Kick-off of the MQ-1 in Beijing with a presentation of the EDS Appreciation Plaque to Prof. TianlingRen (left) of Tsinghua University, by Prof. Ilesanmi Adesida, EDS President (right)

MQ-2 hosts and speakers: Prof. X. Zhang (Left-1, Yunnan University), Prof. J. Liou (left-3, EDS), Prof.C. Claeys (left-4, EDS), Prof. A. Wang (left-5, EDS) and Prof. Wang (left-6, Yunnan University)

Report on the IEEE EDS Mini-Colloquiumheld in China - WIMNACT-12

14eds04.qxd 9/7/07 3:26 PM

tute of MicroElectronics (SHRIME) atPeking University, hosted the work-shop. IEEE EDS Distinguished Lectur-ers Prof. Cary Yang of Santa ClaraUniversity, Prof. Jamal M. Deen ofMcMaster University, Prof. MansunChan of Hong Kong University ofScience and Technology, Prof. Mar-cel D. Profirescu of the TechnicalUniversity of Bucharest, and Prof.Yuhua Cheng of Peking University,delivered talks respectively at theworkshop, which were well receivedby about 80 people from local indus-try and universities who attended.

In conclusion, the 12th EDSMD/WIMNACT Series was a greatsuccess. It not only provided a tech-nical forum for internationalrenowned experts to interact withlocal Chinese professionals and stu-dents in the EDS-related fields, butalso served to promote the IEEEEDS values to the Chinese commu-nity and helped to create opportuni-ties to establish greater presence ofEDS in the Greater China region.This MQ-China series is part of theSociety’s successful outreach

efforts to the under-served portionsof the world, in order to maintainIEEE EDS as a real global organiza-tion in the field of electronics.

Albert Z. H. WangEDS Vice-President of Membership

University of California, RiversideRiverside, CA, USA


EDS future hope: our Chinese student assistants to the MQ series from the three local EDS studentbranch chapters, i.e., Tsinghua University, Peking University and University of Electronic Science

and Technology of China

MQ-3 attendees and the distinguished lecturers (from Left to Right in front row) Prof. Yuhua Cheng , Jamal M. Deen, Prof. Cary Yang, Prof. MansunChan, and Prof. Marcel D. Profirescu

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Hamid Tony Bahramian*Victor Bright*Gyoung-Ho BuhMarco CorsiVincenzo DitommasoRobert Eisenberg

Lan FuSatoshi InoueNando KaminskiAtsushi KurobeSouvik Mahapatra*Jose Maiz*

Hideharu MatsuuraShamsoddin

Mohajerzadeh*Yasuo NaraVenkateswara Rao*Azzouz Sellai*

Kenji Shiraishi*Alexander SladeSoichiro TsujinoTerence Worton*Dong XuRegan Zane

* = Individual designated EDS as nominating entity

If you have been in professional practice for 10 years, you may be eligible for Senior Membership, the highest grade ofmembership for which an individual can apply. New senior members receive a wood and bronze plaque and a creditcertificate for up to US $25 for a new IEEE society membership. Upon request, a letter will be sent to employers, recog-nizing this new status.

For more information on senior member status, visit http:// www.ieee.org/web/membership/senior-members/sta-tus.html. To apply for senior member status, fill out an application at http://www.ieee.org/ organizations/rab/md/smelev.htm.

Congratulations to the EDS Members Recently Elected to IEEE

Senior Member Grade!

Congratulations to the EDS Members Recently Elected to IEEE

Senior Member Grade!

The EDS Membership Fee SubsidyProgram (MFSP) is a chapter pro-gram that enables chapters in lowincome geographical areas toincrease their membership. This pro-gram is also used to help launch newIEEE EDS chapters.

The MFSP guidelines are as follows:IEEE policy currently allows a 50%

discount on IEEE dues and one soci-ety membership for any individualwhose annual salary is less thanUS$12,600. This offering is referredto as the Minimum Income Special

Considerations Option. The ElectronDevices Society currently has a pro-gram for its chapters called the Mem-bership Fee Subsidy Program(MFSP), which both complements theIEEE Minimum Income offering andprovides a significant additional ben-efit for qualified individuals.

With the EDS Membership FeeSubsidy Program, EDS will pay 50%of the IEEE and EDS dues for anynew/existing member or studentqualifying for the Minimum Incomeoption. EDS will cover up to twelve(12) chapter members/students peryear. Each member/student can onlybe covered 'one time' under this pro-gram and four of the twelve mem-bers/students each year must be newIEEE/EDS members/students. Theindividuals can be applying for eitherregular membership or studentmembership. This program is alsoavailable to all unemployed mem-bers. Although the IEEE MinimumIncome option allows individuals topurchase publication subscriptions

for one society at a 50% reduced rate,the EDS MFSP does not cover thepayment of publication subscriptions.

If a chapter has individuals whoqualify for the reduced IEEE Mini-mum Income offering and the EDSMFSP, all the Chapter Chair needs todo is obtain the IEEE/EDS member-ship application forms or IEEERenewal Bills from all individualsparticipating in the program (maxi-mum 12) and submit them to SpringShen of the EDS Executive Office, forprocessing. Once received, the appli-cation forms will be coded with aspecial account number and submit-ted to the pertinent IEEE departmentfor processing.

For any questions concerning theprogram, please contact Laura Riello([email protected]) of the EDS Execu-tive Office.

Albert Z. H. WangEDS Vice President of MembershipUniversity of California, Riverside

Riverside, CA, USA

EDS Membership Fee Subsidy Program (MFSP)EDS Membership Fee Subsidy Program (MFSP)

14eds04.qxd 9/7/07 3:26 PM


As an EDS member, you have FREEon-line access to the full articles ofthe following publications: • Electron Device Letters (All

Issues From 1980 through current)• Transactions on Electron

Devices (All Issues From 1954through current)

• International Electron DevicesMeeting (All Digests From 1955through current)

• EDS Newsletter• Journal of Lightwave Technology

These publications can be viewedthrough the on-line delivery system,IEEE Xplore, which provides IEEEmembers with the following bene-fits/capabilities:• Online access to their IEEE per-

sonal subscriptions• Full-text PDF image files for con-

tent, including all original charts,graphics, diagrams, photographsand illustrative material, from anintegrated-circuit schematic to atopographic map to a photographof a new crystalline structure

• Full-text search allows you tosearch metadata fields and theassociated ful l - text journal /transaction

• Links to references and cross link-ing between EDS publicationsand other IEEE publications isavailable in articles

• CrossRef search offers outboundlinks to publications by otherleading publishers, employing thegoogle search engine

• Online version available prior tothe print equivalent

• Free and unlimited access toabstract/citation records

• Unlimited printing of bibliograph-ic records and full-text documents

• Includes cover to cover material(starting in 2004) i.e., letters toeditor, editorial boards, call forpapers

In addition to the above benefits,EDS members can purchase a com-bined paper and on-line subscriptionto Transactions on SemiconductorManufacturing and/or the Journal of

Microelectromechanical Systems.Other publications offered by EDSthat have both an electronic only ver-sion and a combination paper andelectronic version, also available foran additional cost, include; Transac-tions on Applied Superconductivity,Transactions on Computer-AidedDesign of Integrated Circuits andSystems, Transactions on Deviceand Materials Reliability, Journal ofDisplay Technology, Journal of Elec-tronic Materials, Transactions onNanotechnology, NanotechnologyMagazine, and the Sensors Journal.

To use the Xplore system, you mustestablish an IEEE Web Account. Thisaccount is also used for renewing yourIEEE membership online. If you need toestablish an IEEE Web Account, pleasevisit www.ieee.org/web/accounts/.IEEE members can go to theXplore site through the URL www. iee-explore.ieee.org. We encourage allmembers of the Society to use thisdynamic system and leveragetheir membership benefits to thefullest extent.

On-Line Access to IEEE Journals Available to EDS Members

The 2006 Annual DVD update pack-age is now ready for distribution. Itincludes all issues from 2004 through2006 of Electron Device Letters (EDL)and Transactions on Electron Devices(T-ED), as well as the proceedings ofthe International Electron DevicesMeeting (IEDM) over the same period.This update is fully compatible withthe EDS Archival Collection DVD andthe two products work togetherseamlessly providing extensivesearch capabilities to all issues ofEDL, T-ED and all technical digests ofthe IEDM. The DVDs include com-prehensive author, subject and publi-cations indices, abstract pages and allarticles are in searchable PDF format.

The 2006 EDS DVD Update Pack-age is available exclusively to EDSmembers for a bargain price of US$30(students $15) through the IEEE onlineStore http://shop.ieee.org/store/ or

using a downloadable order formfrom the EDS web-site at. http://www.ieee.org/portal/pages/society/eds/pubs/pubs.html

You can request the 2007 EDSDVD Update Package in advance as asubscription via your 2008 IEEEMembership renewal bill when youreceive it this Fall. The 2007 EDS DVDPackage will be available at the latestby June 2008. Once you sign-up toreceive the 2007 package via yourmember renewal bill, you will auto-matically be billed each year for sub-sequent versions of the package.

For those interested, the EDSArchival Collection is still in stockand available solely to EDS mem-bers for US$30 ($9.95 students)through the IEEE online store athttp://shop.ieee.org/store/. Thisarchival collection includes all issuesof Transactions on Electron Devices

(1954-August 2004), Electron DeviceLetters (1980-August 2004), and allthe technical digests of the Interna-tional Electron Devices Meeting(IEDM) (1955-2004).

These products are being madeavailable to our members in the spiritof providing technical information at amost affordable price possible. Hand-in-hand with this goes the concept ofindividual ownership. We hope thatyou will adhere to this concept andencourage others interested in usingthem to acquire their own copy. If youare currently not an EDS member, weencourage you to become one to availof these exceptional productsdesigned to empower our members.

Renuka P. JindalEDS Vice-President of Publications

University of Louisiana at LafayetteLafayette, LA, USA

ANNUAL DVD UPDATE PACKAGE AVAILABLE TO EDS MEMBERS

On-Line Access to IEEE Journals Available to EDS Members

ANNUAL DVD UPDATE PACKAGE AVAILABLE TO EDS MEMBERS

14eds04.qxd 9/7/07 3:26 PM


14eds04.qxd 9/7/07 3:26 PM


Regional and Chapter NewsRegional and Chapter News

CAS/ED/PEL Venezuela- by A. Ortiz-CondeThe CAS/ED/PEL Venezuela Chaptercontinued with its series of seminarsand workshops. On Monday, July 2,2007, the Chapter organized a two-hour technical seminar at SimónBolívar University, Caracas, entitled“Post-Breakdown Current in MOSStructures: Physical models andapplications.” Dr. Enrique Miranda,who is an EDS Distinguished Lectur-er and a Professor with the EscolaTécnica Superior d’Enginyeria, Uni-versitat Autònoma de Barcelona,Spain, UAB, was the special invitedspeaker for this occasion. Prof.Miranda is well-known international-ly for his research devoted to theelectron transport problem throughthe gate insulator in MOS devicesunder different circumstances.

The seminar presented a compre-hensive and up-to-date description ofthe physical models of breakdown cur-rent and the post-breakdown conduc-tion in MOS structures. Strongemphasis was made in very thin oxidethickness which is very important dueto aggressive device feature size reduc-tion in the present semiconductorindustry.

There was very active participationby the audience, with many interestingquestions and answers. The followingtwo days, Dr. Miranda met with differ-ent research groups of Simón BolívarUniversity to discuss ongoing collabo-rative activities.

For additional information, contactProfessor Adelmo Ortiz-Conde [email protected].

~ Jacobus W. Swart, Editor

ED Israel- by Gady Golan1. On Wednesday, April 25, 2007, Prof.

Gady Golan, ED Israel Chapter Chairpresided over the seminar “SiliconBased LED Micro-Displays for NTE(Near-to-the-Eye) Applications”,delivered by Prof. Alex Smirnov -Republic of Belarus, at the HolonInstitute of Technology (HIT), Holon,Israel.

2. On Sunday, June 17, 2007, IEEEconference on electromagnetic radi-ation, electric and magnetic fields inELF and protection systems for elec-tromagnetic radiation was held atthe Holon Institute of Technology(HIT), Holon, Israel. The EDS sessionwas chaired by Prof. Gady Golan. Inthe session, Prof. Golan presented‘Novel concepts in photovoltaicssystems’.

3. Professor Anthony O’Neill, Newcas-tle University, England, delivered histalk on ‘Strain Engineering in SiliconTechnology’ at the University ofManchester, Manchester, England,on Thursday June 7, 2007. ProfessorO’Neill is an IEEE Distinguished Lec-turer. The talk was well received.

~ Zhirun Hu, Editor

MIXDES 2007- by Andrzej NapieralskiOn June 21-23, 2007, in Ciechocinek,Poland, the 14th International Con-ference MIXDES 2007 took place.The event was organized by the

Technical University of Lodz togetherwith the Warsaw University of Tech-nology, Poland. The conference wasco-sponsored by The IEEE PolandSection, IEEE ED & CAS Chapters,the CARE Project (Coordinated Accel-erator Research in Europe), the Min-istry of Scientific Research andInformation Technology, and the Pol-ish Academy of Sciences, Committeeof Electronics and Telecommunica-tion, Section of Microelectronics andSection of Signals, Electronic Circuitsand Systems.

In addition to the regular program, fourspecial sessions were organized:• “Compact Modelling” organized by

Dr. Daniel Tomaszewski (Institute ofElectron Technology Poland), Dr.Władysław Grabinski (GMC Suisse,Switzerland) and Prof. Hiroshi Iwai(IT Tokyo, Japan),

• CARE Project Special Session orga-nized by Dr. Mariusz Grecki (Techni-cal University of Lodz, Poland),

• “Advanced Logic Synthesis withApplication to FPGA-based Imple-mentations” organized by Prof.Tadeusz Łuba (Warsaw Universityof Technology, Poland),

• “CLEAN Workshop: Leakage AwareDesign of Nanometer CMOS Cir-cuits” organized by Prof. WiesławKuzmicz (Warsaw University ofTechnology, Poland).

The conference was attended by over140 scientists coming from 28 coun-tries from around the world. During theconference, five invited papers and 125regular papers were presented at oral,poster, and special sessions. The con-ference proceedings (ISBN: 83-922632-4-3) and CD ROM (ISBN: 83-922632-9-4)were published by the Technical Uni-versity of Lodz.

The following invited keynote presen-tations were given: • “Evolution of the Classical Function-

al Integration Towards a 3D Hetero-geneous Functional Integration” -J.-L. Sanchez, A. Bourennane, M.Breil, P. Austin, M. Brunet, J.P. Laur

USA, CANADA &LATIN AMERICA

(Regions 1-6, 7 & 9)

USA, CANADA &LATIN AMERICA

(Regions 1-6, 7 & 9)

Professor Miranda during his presentation

EUROPE, MIDDLEEAST & AFRICA

(REGION 8)

EUROPE, MIDDLEEAST & AFRICA

(REGION 8)

14eds04.qxd 9/7/07 3:26 PM


(LAAS-CNRS and Univ. Toulouse,FRANCE),• “Modelling of Thin Film Transistors

for Circuit Simulation” - B. Iniguez(Univ. Rovira i Virgili, Spain), R.Picos (Univ. Illes Balears, Spain), M.Estrada, A. Cerdeira (CINVESTAV,Mexico), T.A. Ytterdal (NorwegianUniv. of Science and Techn., Nor-way), W. Jackson (HP Labs, USA),A. Koudymov, D. Veksler, M.S. Shur(Rensselaer Polytechnic Inst., USA),

• “STARC's Semiconductor DesignTechnology Research Activities andthe HiSIM2 Advanced MOSFETModel Project” - Y. Furui (STARC,Japan), M. Miura-Mattausch, N.Sadachika, M. Miyake, T. Ezaki, H.J.Mattausch (Hiroshima Univ.,Japan), T. Ohguro, T. Iizuka, R. Ina-gaki, N. Fudanuki (STARC, Japan),

• “Tradeoffs and Optimization in Ana-log CMOS Design” - D.M. Binkley(The Univ. of North Carolina atCharlotte, USA).

Based on evaluation of the quality of thepapers and presentations, thirteen of thepapers have received the Best PaperAward. Additionally, the paper entitled“Hardware Fault Free Simulation forSoC” (V. Hahanov, M. Kaminska, W.Ghribi, A. Hahanova - Kharkov NationalUniv. of Radioel., Ukraine) received theIEEE ED Poland Chapter Special Awardfrom the Section Chairman.

The next MIXDES 2008 Conferencewill take place in Poznan, one of theoldest and largest cities in Poland. ThePreliminary Call for Papers is alreadyavailable at http://www.mixdes.org/downloads/call2008.pdf. More informa-tion about the past and the next

MIXDES conferences can be found athttp://www.mixdes.org.

~ Andrzej Napieralski, Editor

ED Japan- by Atsushi KurobeA DL talk entitled “Alternative process-es for synthesis of high k dielectricsand CNT’s” was given by Prof.Jacobus W. Swart, State University ofCampinas, Brazil, at the SuzukakedaiCampus of Tokyo Institute of Technolo-gy, Yokohama, Japan, on May 31,2007. The lecture was followed by fruit-ful discussion on the CNT’s for futureapplications. This DL meeting attendedby 15 people was very meaningful.

On June 25, 2007, the chapteralso organized a DL meeting entitled“Organic Electronics and RFdevices” at the Hongo Campus of

University of Tokyo, Japan. ThreeJapanese DLs made presentationson their topics and offered the atten-dees the opportunity to get to gripswith up-to-date, interesting and use-ful research. Prof. Takao Someya,the University of Tokyo, talked aboutthe current status and future applica-tions of Organic Electronics. The titleof his lecture was “Ambient Elec-tronics application of Sheetdevices.” Prof. Mitsumasa Iwamoto,Tokyo Institute of Technology, Yoko-hama, lectured on “Probing andControl of Surface Polarization Phe-nomena in Molecular Films forOrganic Electronics.” And Prof.Kenya Hashimoto, from Chiba Uni-versity, Chiba, talked about theresearch trends of RF filters, focus-ing on their possible integration intoRF ICs. His lecture was entitled, “RFSAW/BAW Devices: Current Statusand Future Prospects.” These lec-tures were followed by lively discus-

The MIXDES 2007 Conference participants in front of the Targon Palace – the conference site

The ED Japan DL meeting on May 31, 2007. From the third person from the left at the back: Prof.Kazuo Tsutsui, EDS Newsletter Editor, Prof. Jacobus W. Swart of State University of Campinas,

Brazil and Prof. Hiroshi Iwai, Partner and EDS Jr. Past President

ASIA & PACIFIC(REGION 10)

ASIA & PACIFIC(REGION 10)

The DL meeting on June 25, 2007. The meetingentitled “Organic Electronics and RF devices”

was held at the Hongo Campus of University ofTokyo, Tokyo, Japan. It was very successful

with more than 50 participants

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sions between the lecturers and theaudience. The meeting, with morethan 50 participants, was a greatsuccess.

In addition, in the first half of theyear from January 2007 - June 2007,the ED Japan Chapter held 4 jointtechnical meetings with the JapanSociety of Applied Physics, the Associ-ation of Super-Advanced ElectronicsTechnologies, etc.

ED Kansai- by Takashi IpposhiThe ED Kansai Chapter held the 5thInternational Meeting for Future ofElectron Devices, Kansai (2007IMFEDK) at Osaka UniversityNakanoshima Center, Osaka, Japan,April 23-24, 2007. This year, Dr. D. Parkfrom Samsung Electronics Co., Ltd.,Prof. K. Wada from the University ofTokyo and S. Sugahara from TokyoInstitute of Technology deliveredkeynote speeches concerning Nano-CMOS technology, Si photonics-elec-tronics and Spin-transistor electronics,respectively. The meeting includedfour regular sessions: 1) Simulationand Modeling, 2) Silicon Devices, 3)Compound Semiconductor Devices,and 4) Emerging Devices. There werealso two poster sessions. Prior to thesessions, we had two tutorial lecturesfocusing on organic electronics andorganic solar cell. About 230 attendeesparticipated in the sessions. It was agreat opportunity to promote cross dis-ciplinary interactions among the partic-ipants with different backgrounds,which was one of the main purposes ofholding the meeting in Kansai.

Three papers were selected for theIMFEDK Awards. Prof. Y. Omura, Vice

Chair of Executive Committee of the EDKansai Chapter, honored Mr. Y. Hirano(Renesas Technology Corp.) for theGrand Award, Mr. T. Kimura (HokkaidoUniversity) and Mr. H. Minari (OsakaUniversity) for the Student Award.

~ Kazuo Tsutsui, Editor

ED Bangladesh- by Anisul HaqueThe ED Bangladesh Chapter arrangedtwo technical talks for the past quarter.Dr. Syed Kamrul Islam, Associate Pro-fessor, ECE, University of Tennessee,gave a talk on Wide Bandgap Semicon-ductor Devices for Vehicular Applica-tions in BUET on June 25. The talk wasattended by around 75 people. He gaveanother talk on Challenges for RF Cir-cuit Design in East West University onJune 26. This second talk was attendedby around 60 people.

IWJT 2007- by Kyoichi SuguroThe 7th International Workshop onJunction Technology (IWJT 2007) washeld on June 8th and 9th at Kyoto Uni-versity. The purpose of the workshop isto provide an open forum for all engi-

neers and scientists who are workingwith junction technologies. The num-ber of attendees exceeded 130 andthere were a lot of famous engineersand scientists from Japan, Korea, Chi-na, Taiwan, Singapore, USA , Ger-many, France, and Belgium.

The technical program of this 7thIWJT consisted of 39 excellent papers,including 1 keynote speech (fromUSA), 11 invited papers (4 from USA, 1from Germany, 2 from Japan, 3 fromSingapore, and 1 from China), 27 con-tributed papers (6 from USA, 2 fromBelgium, 1 from France, 14 fromJapan, 3 from Korea and 1 from Tai-wan). These papers were categorizedinto 8 technical sessions, AdvancedDevice/Integration, Modeling/Simula-tion, Characterization, Doping/ShallowJunction, Silicide/Germanide 1&2,Advanced Equipments, and Activationof Impurity Atoms.

One feature of the IWJT 2007 is thateach invited paper presents not onlythe review of the authors’ previousworks but brand-new results on theirwork. Therefore, attendees understoodboth the background technology andthe brand-new technology with a lot ofnovel data. New proposals were madeon Device integration and Modeling,Doping Technology, Activation Tech-nology for Ultra-shallow junction, Sili-cidation/Germanidation Technologyand Characterization Technology. Inorder to honor the authors of the mostexcellent papers, two papers will beselected as “The Best Paper Award ofIWJT” which was established thisyear. The authors of this award will behonored at the next IWJT.

Winners of IMFEDK Awards, and Prof. Omura,Vice Chair of the ED Kansai Chapter

Prof. Islam giving his talk at East West University

Attendees with committee members at IWJT 2007

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AP/EDS/MTT Penang- by Richard KeatingThe AP/EDS/MTT Penang Joint Chap-ter is a new chapter recently formed inPenang, Malaysia, whose members aremainly from the high-tech companiesin and around Penang. We were fortu-nate to have 3 excellent presentationsover the last quarter.

The first on April 25th - “IntegratedCircuit Polysilicon Resistors” by AlbertV. Kordesch, and “Novel Physical-Based SPICE Model to capture CMOSHook Shaped Drive Current behavior inNanotechnology” by Philip Tan, bothfrom Silterra Sdn. Bhd. Kulim,Malaysia.

The second talk on May 14th -“Characterizing transient activedevice behavior using pulse I-V tech-nique”, by Yuegang Zhao, KeithleyInstruments Inc.

And the final talk of the quarter wason June 12th - “Trends and challengesin antenna technologies for personaldevices”, by Dr. Soo Liam Ooi,

Motorola Laboratories, Plantation,Florida, USA.

Upcoming talks include “Photonicintegrated circuits and ultra-broadbandsemiconductor quantum-dot lasers”,by Prof. Boon S. Ooi, Electrical andComputer Engineering Dept., LehighUniversity, Bethlehem, PA, USA, and“Microwave Devices”, by Prof. Ken-yaHashimoto, Graduate School of Engi-neering, Dept. Electrical and ElectronicEngineering, Chiba University, Japan

We would like to thank PSDC andMotorola for their support of ourChapter.

REL/CPMT/ED Singapore- by Alastair Trigg One of the key activities during thisquarter was the 2nd Pall-NTU Technol-ogy Workshop on Si-based Nanode-vices held at Nanyang TechnologicalUniversity (NTU) in May. A full accountof the workshop can be found in thearticle following this report.

In June we had two DL talks. Thefirst one was by Prof. Vijay K. Arora ofWilkes University, USA on “Perfor-mance Evaluation of Nano Circuitsand Systems with Ballistic Carriers”,organized by IMRE at National Univer-sity of Singapore (NUS). The secondone by Prof. Mansun Chan (HK Uni-versity of Science & Technology) onthe “IC Industry in China: Challengesand Opportunities”. The latter wasrather different from our usual techni-cal talks in that it concentrated on thebusiness rather than technical aspectsof IC design and looked at the oppor-tunities and challenges for start-up ICdesign houses in China. It was con-ducted at NTU and attracted nearly 50participants.

June was a busy month with anoth-er two technical talks by the husband-and-wife team of Dr Chih-Hsun Chu &Dr Yong-Fen Hsieh of Materials Analy-sis Technology, a company they start-ed 4 years ago to provide failureanalysis to the Taiwan semiconductorindustry. Dr Chu discussed the differentscenarios of non-planar oxidation of Si,giving many examples that he hadseen over the course of his career. DrHsieh gave the second talk on “IonImplantation and Related Defect For-mation by Latent Stress”. Some of theresults were actually obtained duringher postdoctoral research at Bell Labs.

Pall-NTU Technology Workshop- by Chuan Seng TanJointly organized by Pall Filtration Pri-vate Limited & the MicroelectronicsCenter, School of EEE, Nanyang Tech-nological University (NTU), and theSingapore IEEE Rel/CPMT/ED Chapter,the 2nd Pall-NTU Technology Work-shop on Silicon-based Nanodeviceswas successfully held on May 21, 2007in NTU. Pall Filtration sponsored theworkshop. Two overseas speakers andsix local speakers presented talks ontopics ranging from new filtration tech-nologies to advanced sub-45 nm tran-sistor technologies. Emergingtechnology on silicon nanowires tran-sistors and three-dimensional ICs werealso presented. The details of the talksare as follows:

• The State-of-Art Nano-Era Filtrationin Wet Process, Dr. Fumitomo Kuni-moto, Nihon Pall, Japan

• Fabrication of 3-D Structures viaNanoimprint Lithography, Dr. HongYee Low, Institute of MaterialsResearch and Engineering

• Stress Engineering for sub 65 nmCMOS Technologies, Dr. JinpingLiu, Chartered Semiconductor Man-

Richard Keating (left) presenting a certificate ofappreciation to Al Kordesch for his talk on

Integrated Resistors

Prof. Mansun Chan giving a DL talk on 27 June

Dr Chih-Hsun Chu (left), Dr Yong-Fen Hsieh(centre) and Dr Gan Chee Lip of NTU (right) at

the Technical talk on 25 June

Philip Tan (right) accepting the Chapter’scertificate for his talk on his new model for

CMOS transistors

14eds04.qxd 9/7/07 3:26 PM


ufacturing• Dual Metal Gate Technologies for

45nm and Beyond CMOS Devices,Dr. Hong-Yu Yu, IMEC, Belgium

• GAA Nanowire MOSFET: DeviceArchitecture with Enhanced Electro-static Control for Excellent ShortChannel Performance, Navab Singh,Institute of Microelectronics

• Wafer Level 3-D ICs, Dr. Chuan SengTan, Nanyang Technological Uni-versity

• Advanced Transmission ElectronMicroscopy Platform for Nano-elec-tronics Device and Interface Charac-terization, Chih-Hang Tung, Instituteof Microelectronics

• Understanding Electronic StructureProperties of Nanodevices Using 1stPrinciples Calculation, Dr. MarcusYee, Atomistix Singapore

The workshop attracted about 146 par-ticipants from the industry, researchinstitutions and universities. The centerplans to organize a similar workshopannually.

ED SJCE- by P. M. PavanThe IEEE ED SJCE student chapter inits continuing efforts to increase thetechnical knowledge base of thestudents, has conducted many events,one such being a workshop regarding

“Lossy Compression Technologiesin Multimedia” by Mr. Vinay M. K(co-founder Path Partners Technology).

The workshop started off withthe “Probability theory” and somebriefs about “Measured theory”.Then it underwent a brief introduc-tion regarding the basic conceptsof Signal Processing. Thereafterthe main course consisted of theconcepts of “Audio Signal Process-ing”, “Image Processing” and“Speech Processing”. Each ofthem were covered in a separatesession in detail regarding thelosses that is encountered duringthe processing and also on how

can these losses can be reduced inpractical applications.

As a part of the regular events,weekly tests were conducted based onthe basic electronics, digital designand others.

“When the going gets tough,the tough gets going” being themotive of the IEEE ED SJCE stu-dent chapter, it has well proved thatit is a very good platform for the stu-dents to improve their technicalbase and it will continue doing so inthe coming future.

ED/SSCS/LEO Western Australia- by Adam OsseiranThe Western Australia joint EDS,SSCS and LEOS Chapter wasfounded in June 2007. Our objec-tive is to promote the networkingand sharing of information andknowledge among researchers andengineers in Western Australia. Wehope that we can serve as the com-munity hub for our IEEE EDS, SSCSand LEOS Society members as theyprogress through their professionalcareer. Furthermore, the WA Chap-ter will serve as a platform to orga-nize workshops, conferences, shortcourses and presentations by Dis-t inguished Lecturers and localexperts. The Chapter will also sup-port participation of local industryand provide it with the most rele-vant information from the commu-nity. For further information, pleasecontact the new Chapter Chair,Associate Professor Adam [email protected]

~ Xing Zhou, Editor

Pall-NTU Workshop speakers and organizers. Left to right: Fumitomo Kunimoto, VoonLeong, Navab Singh, Chuan Seng Tan, Chih-Hang Tung, Jinping Liu, Hong-Yu Yu,

Marcus Yee, Kin Leong Pey, Timothy Lam

In front: from the left Mr.Vinay M. K., Dr. C. R. Venugopal and the students who attended the workshop

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October 1 - 4, 2007, * IEEE International SOIConference Location: Miramonte Resort & Spa,Indian Wells, CA, USA, Contact: Bobbi Armbruster,E-Mail: [email protected], Deadline: Not Avail-able, www: www.soiconference.org

October 2 - 5, 2007, T International Confer-ence on Advanced Thermal Processing ofSemiconductors, Location: Grand Hotel BaiaVerde, Cannizzaro, Catania, Sicily, Italy, Contact:Bo Lojek, E-Mail: [email protected], Deadline:5/31/07, www: www.ieee-rtp.org

October 3, 2007, T Workshop on CompactModeling for RF/Microwave Applications,Location: Boston Marriott Long Wharf Hotel, Boston,MA, USA, Contact: Ramses Van Der Toorn, E-Mail:[email protected], Deadline: NotAvailable, www: http://hitec.ewi.tudelft.nl/cmrf07/

October 3 - 6, 2007, T International Forum onStrategic Technology, Location: Mongolian Uni-versity of Science and Tech, Ulaanbaatar, Mongo-lia, Contact: Tuul Davaa, E-Mail:[email protected], Deadline: Not Available,www: www.must.edu.mn/ifost2007

October 7 - 12, 2007, T Symposium onULSI Process Integration, Location: Hilton,Washington, DC, USA, Contact: Cor Claeys, E-Mail: [email protected], Deadline: 5/26/07,www: N/A

October 8 - 10, 2007, T IEEE InternationalConference on Computer Design ,Location: Squaw Creek Resort, Squaw Valley,CA, USA, Contact: Kevin Rudd, E-Mail:[email protected], Deadline: Not Avail-able, www: www.iccd-conference.org

October 8 - 12, 2007, T European Symposiumon Reliability of Electron Devices, FailurePhysics and Analysis, Location: Palatium-Arca-chon, Bordeaux, France, Contact: M. Garcia E-Mail: [email protected], Deadline: 3/16/07, www:http://esref07.ixl.fr/welcome/index.html

October 8 - 10, 2007, T IEEE EuropeanMicrowave Integrated Circuits Conference,Location: ICM, Munich International Congress Cen-

tre, Munich, Germany, Contact: Fred Schindler, E-Mail: [email protected], Deadline: 2/25/07,www: www.eumweek.com

October 8 - 10, 2007, T International Work-shop on Computational Electronics, Location:Campus Center of University of Massachusetts,Amherst, MA, USA, Contact: Massimo Fischetti, E-Mail: [email protected], Deadline: 6/1/07,www: www.ecs.umass.edu/iwce

October 9 - 14, 2007, T InternationalSchool on Chaotic Oscillations and Pat-tern Formation, Location: School of ChaoticOscillations and Pattern Formati, Saratov, Rus-sia, Contact: CHAOS 2007, E-Mail:[email protected], Deadline: Not Avail-able, www: http://nonlin.sgu.ru/chaos2007/

October 14, 2007, T Reliability of CompoundSemiconductors Workshop, Location: Portland,OR, USA, Contact: Anthony Immorlica, E-Mail:[email protected], Deadline:Not Available, www: Not Available

October 14 - 17, 2007, * IEEE CompoundSemiconductor IC Symposium, Location:Hilton Portland & Executive Tower, Portland, OR,USA, Contact: Mohammad Madihian, E-Mail:[email protected], Deadline: 5/7/07,www: http://www.csics.org/

October 15 - 16, 2007, T International SoCDesign Conference, Location: Coex ConferenceCenter, Seoul, Korea, Contact: Seongsoo Lee, E-Mail: [email protected], Deadline: Not Available,www: www.isocc.org

October 15 - 17, 2007, * International Semi-conductor Conference, Location: Sinaia Hotel,Sinaia, Romania, Contact: Cristina Buiculescu, E-Mail: [email protected], Deadline: 6/10/07, www:www.imt.ro/cas

October 15 - 18, 2007, * IEEE InternationalIntegrated Reliability Workshop, Location:Stanford Sierra Conference Centers, South LakeTahoe, CA, USA, Contact: Roy and Becky Walker,E-Mail: [email protected], Deadline: 7/13/07,www: www.iirw.org

October 15 - 17, 2007, T IFIP Interna-t ional Conference on Very LargeScale Integration , Location: GeorgiaTech Hotel, Atlanta, GA, USA, Contact: Vin-cent Mooney, III, E-Mail: vlsisoc2007@gate-ch .edu , Dead l i ne : 4/9/07, www:www.vlsisoc2007.gatech.edu

October 28 - 31, 2007, T IEEE InternationalConference on Sensors, Location: HyattRegency Atlanta, Atlanta, GA, USA, Contact:Katharine Cline, E-Mail: [email protected], Deadline: 4/3/07, www: www.ieee-sensors2007.org

November 4 - 8, 2007, T IEEE InternationalConference on Computer Aided Design,Location: DoubleTree Hotel San Jose, San Jose, CA,USA, Contact: Kathy Embler, E-Mail:[email protected], Deadline: 4/11/07, www:www.iccad.com

November 5 - 8, 2007, T International Micro-processes and Nanotechnology Confer-ence, Location: Kyoto International ConferenceHall, Kyoto, Japan, Contact: IMNC secretariat, E-Mail: [email protected], Deadline: 6/30/07,www: www.imnc.jp

November 6 , 2007, T I EEE E lec t ronDevices Activities in Western NewYork Conference, Location: Universityo f Ro che s t e r , Ro che s t e r , NY , USA ,Contact : Mar t in Margala, E -Mai l : mar [email protected], Deadline: NotAvailable, www: Not Available

November 10 - 13, 2007, T Non-Volatile Mem-ory Technology Symposium, Location: HyattRegency Albuquerque, Albuquerque, NM, USA,Contact: Kristy Campbell, E-Mail:[email protected], Deadline: 6/2/07,www: coen. boisestate.edu/nvmts

December 3 - 7, 2007, T International Photo-voltaic Science & Engineering ConferenceLocation: Fukuoka International Congress Center,Fukuoka, Japan, Contact: Yoshio Ohsita, E-Mail:[email protected], Deadline: 7/15/07,www: http://www.pvsec17.jp

The complete EDS Calendar can be found at our web site:http://www.ieee.org/society/eds/meetings/meetings_calendar.xml Please visit!

EDS MEETINGS CALENDAR(As of August 24, 2007)

EDS MEETINGS CALENDAR(As of August 24, 2007)

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December 6 - 8, 2007, * IEEE SemiconductorInterface Specialists Conference, Location:Key Bridge Marriott, Arlington, VA, USA, Contact:Dina Triyoso, E-Mail: [email protected],Deadline: 7/21/07, www: www.ieeesisc.org

December 10 - 12, 2007, * IEEE Interna-tional Electron Devices Meeting, Location:Washington Hilton and Towers, Washington,DC, USA, Contact: Phyllis Mahoney, E-Mail:[email protected], Deadline: 6/22/07,www: http://www.ieee.org/conference/iedm

December 12 - 14, 2007, T InternationalConference on Field-ProgrammableTechnology, Location: Kitakyusyu Interna-t iona l Confe rence Cen te r , K i takyusyu ,Japan, Contact: Tadao Nakamura, E-Mail:[email protected], Deadline:6/25/07, www: www.kameyama.ecei .tohoku.ac.jp/icfpt07

December 12 - 14, 2007, T InternationalSemiconductor Device Research Sym-posium, Location: Stamp Student Union, Unv.Of Maryland, Col lege Park, MD, USAContact : Phi l l ip Thompson, E -Mai l :[email protected], Deadline:9/4/07, www: www.ece.umd.edu/isdrs2007

December 15 - 19, 2007, T AdvancedWorkshop on ‘Frontiers in Electron-ics’, Location: Park Royal Hotel, Cozumel,Mexico, Contact: Michael Shur, E-Mail:[email protected], Deadline: 10/1/07, www:nina.ecse.rpi.edu/shur/wofe07/

December 16 - 20, 2007, T InternationalWorkshop on the Physics of Semicon-ductor Devices, Location: Indian Inst. OfTech., Bombay & TIFR Mumbai, Mumbai,India, Contact: V.Ramgopal Rao, E-Mail:[email protected], Deadline: 5/31/07, www:http://www.iwpsd.net/

December 20 - 23, 2007, T IEEE Internation-al Workshop and Tutorials onMicrotechnologies in Electronics, Location:Novosibirsk State Technical University, Novosi-birsk, Russia, Contact: Alexander Gridchin, E-Mail: [email protected], Deadline: 8/20/07,www: Not Available

December 20 - 22, 2007, T IEEE Confer-ence on Electron Devices and SolidState Circuits, Location: Southern TaiwanUniversity of Technology, Tainan, Taiwan,Contact: T.K. Chiang, E-Mail: [email protected], Deadline: 7/29/07, www:www2.eecs.stut.edu.tw/~edssc2007

December 29 - 31, 2007, T International Con-ference on Microelectronics, Location: NileHilton, Cairo, Egypt, Contact: Mohab Anis, E-Mail: [email protected], Deadline:6/15/07, www: www.ieee-icm.com

January 4 - 8, 2008, T InternationalConference on VLSI Design, Location:HICC, Hyderabad, India, Contact: VLSISecretariat, E-Mail: secretary@vlsiconfer-ence .com, Dead l ine : 7/10/07, www:www.vlsiconference.com/vlsi2008

January 22 - 24, 2008, T IEEE Radio andWireless Symposium , Location: LongBeach Convention Center, Orlando, FL,USA, Con tac t : Tom Wel l e r , E -Ma i l :[email protected], Deadline: 7/13/07,www: http://www.radiowireless.org

February 3 - 7, 2008, T IEEE InternationalSolid-State Circuits Conference, Location:San Francisco Marriott, San Francisco, CA,USA, Contact: Diane Melton, E-Mail:[email protected], Deadline: 9/17/07,www: www.isscc.org/isscc

February 25 - 29, 2008, T InternationalConference on Nanosc ience andNanotechnology, Location: MelbourneConvention Centre, Melbourne, Australia,Con tac t : Pau l Mu l vaney , E -Ma i l : mu l [email protected], Deadline: 7/1/07,www: http://www.ausnano.net/

March 12 -14, 2008, T Workshop on Ulti-mate Integration of Silicon Devices,Location: Palazzo Antonini, Udine, Italy, Con-tact: Luca Selmi, E-Mail: [email protected],Deadline: 1/1/8/08, www: http://www.ulis-conference.org/2008/index.html

March 15 - 17, 2008, T International Semi-conductor Technology Conference, Location:Holiday Inn Pudong Shanghai China, Shanghai,China, Contact: Beibei Li, E-Mail: [email protected], Deadline: 10/15/07, www:www.ecsistc.org

March 17 - 19, 2008, T IEEE InternationalSymposium on Quality Electronic Design,Location: San Jose, CA, USA, Contact: Ali Iran-manesh, E-Mail: [email protected], Deadline:9/30/07, www: http://www.isqed.org/

March 17 - 19, 2008, T IEEE InternationalConference on RFID, Location: MGM GrandHotel, Las Vegas, NV, USA, Contact: Dilip Kotak,E-Mail: [email protected], Deadline:11/21/07, www: www.ieee-rfid.org/2008

March 24 - 27, 2008, T IEEE InternationalNanoelectronics Conference, Location: River-front Business Hotel, Shanghai, China, Contact:Cher Tan, E-Mail: [email protected], Deadline:9/18/07, www: www.ieeenec.org

March 24 - 28, 2008, T International Scientif-ic & Practical Conference of Students, PostGraduates & Young Scientists “ModernTechnique & Technology”, Location: Tomsk,Russia Contact: Lyudmila Zolnikova, E-Mail:[email protected], Deadline: 2/15/08, www:www.tpu.ru/files/event/ctt-eng.doc

April 21 - 23, 2008, T International Sympo-sium on VLSI Technology, Systems andApplications, Location: Ambassador HotelHsinchu, Hsinchu, Taiwan, Contact: Clara Wu, E-Mail: [email protected], Deadline: 10/15/07,www: http://vlsitsa.itri.org.tw/2008/general

April 21 – 24, 2008, T International Confer-ence on Microwave and Millimeter WaveTechnology, Location: Nanjing, China, Contact:Wei Hong, E-Mail: [email protected], Dead-line: Not Available, www: Not Available

April 22 - 24, 2008, @ IEEE InternationalVacuum Electronics Conference, Loca-tion: Portola Plaza Hotel, Monterey, CA, USA,Contac t : Ra lph Nadel l , E -Mai l : Ra lph [email protected], Deadline: Not Avail-able, www: Not Available

April 23 - 25, 2008, T International Sympo-sium on VLSI Design, Automation andTest Location: The Ambassador Hotel-Hsinchu,Hsinchu, Taiwan, Contact: Elodie Ho, E-Mail:[email protected], Deadline: 10/15/07, www:vlsidat.itri.org.tw/ 2008/general

April 27 - May 1, 2008, * IEEE InternationalReliability Physics Symposium, Location:Hyatt Regency Phoenix at Civic Center, Phoenix,AZ, USA, Contact: John Suehle, E-Mail:[email protected], Deadline: 10/1/07, www:http://www.irps.org

May 11 - 16, 2008, * IEEE Photovoltaic Spe-cialists Conference, Location: ManchesterGrand Hyatt, San Diego, CA, USA, Contact:Americo Forestieri, E-Mail: [email protected],Deadline: Not Available, www: www. 33pvsc.org

May 11 - 14, 2008, * International Con-ference on Microelectronics, Location: Uni-versity of Nis, Nis, Serbia & Montenegro,Contact: Ninoslav Stojadinovic, E-Mail: [email protected], Deadline: Not Avail-able, www: Not Available

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May 11 - 14, 2008, T International Work-shop on Expert Evaluation & Control ofCompound Semiconductor Materials &Technologies, Location: Lodz, Poland, Contact:Stanislas Krawczyk, E-Mail: [email protected], Deadline: Not Available, www:Not Available

May 18 - 23, 2008, T International Sympo-sium on Dielectrics for Nanosystems:Materials Science, Processing Reliability &Manufacturing, Location: Phoenix, AZ, USA,Contact: Amir Zaman, E-Mail: [email protected], Deadline: Not Available, www:http://www.electrochem.org/ index.htm

May 18 - 22, 2008, @ IEEE InternationalSymposium on Power SemiconductorDevices & Integrated Circuits, Location:Wyndham Orlando Resort, Orlando, FL, USA,Contact: Don Disney, E-Mail: [email protected], Deadline: 10/21/07, www:www.ecse.rpi.edu/conf/ispsd08

May 18 - 21, 2008, T International Confer-ence on Memory Technology and Design,Location: Cedex, France, Contact: RichardEguchi, E-Mail: [email protected],Deadline: 1/23/08, www: www.ewh.ieee.org/soc/eds/nvsmw

May 18 - 21, 2008, T IEEE Non-VolatileSemiconductor Memory Workshop, Loca-tion: Cedex,France, Contact: Richard Eguchi, E-Mail: [email protected], Deadline:1/23/08, www: http://www.ewh.ieee.org/soc/eds/nvsmw/

May 21 – 23, 2008, T International Con-ference on Microwaves, Radar andWireless Communication, Location: Poznan,Poland, Contact: Edward Sedek, E-Mail:[email protected], Deadline: 1/5/08, www:www.irs.edu.pl/irs2008.html

May 24 - 27, 2008, @ International Confer-ence on Microelectronic Test Structures,Location: University of Edinburgh, Edinburgh, Unit-ed Kingdom, Contact: Les Haworth, E-Mail:[email protected], Deadline: 9/14/07,www: http:// www.see.ed.ac.uk/ICMTS/

May 25 - 29, 2008, @ International Con-ference on Indium Phosphide andRelated Materials, Location: Palais descongres Versai l les , Versai l les , France,Contact: Beatrice Valdayron, E-Mail: [email protected], Deadline: NotAvailable, www: http://www.ieee.org/por-tal/site/leos/

May 27 - 31, 2008, T International PowerModulator Symposium, Location: Man-dalay Bay Resort & Casino, Las Vegas, NV,USA, Contact: Teresa Stewart, E-Mail: [email protected], Deadline: Not Available,www: www.cavs.msstate.edu/pmc2008

June 2 - 6, 2008, T International Conferenceon Unsolved Problems of Noise, Location:Lyon, France, Contact: Lino Reggiani, E-Mail:[email protected], Deadline: Not Available,www: Not Available

June 5 - 7, 2008, T International Confer-ence on Ion Implantation Technology,Location: Monterey Converence Center, Mon-terey, CA, USA, Contact: Susan Felch, E-Mail: [email protected], Deadline: NotAvailable, www: www2.avs.org/ confer-ences/insight/08/generalinfo.html

June 15 - 17, 2008, T IEEE Radio Frequen-cy Integrated Circuits Symposium, Loca-tion: George World Congress Center, Atlanta,GA, USA, Contact: Jenshan Lin, E-Mail: [email protected], Deadline: Not Available, www:www.rfic2008.org

June 17 - 19, 2008, @ IEEE Symposium onVLSI Technology, Location: Hilton HawaiianVillage, Honolulu, HI, USA, Contact: PhyllisMahoney, E-Mail: [email protected],Deadline: Not Available, www: www.vlsisympo-sium.org

June 18 - 20, 2008, T IEEE Symposium onVLSI Circuits Location: Hilton Hawaiian Villiage,Honolulu, HI, USA, Contact: Phyllis Mahoney, E-Mail: [email protected], Deadline: NotAvailable, www: www.vlsisymposium.org

July 1 - 5, 2008, T International SiberianWorkshop and Tutorial on ElectronDevices and Materials, Location: NovosibirskState Technical University, Novosibirsk, Russia,Contact: Alexander Gridchin, E-Mail:[email protected], Deadline: 3/15/08, www:http://www.nstu.ru/edm

July 13 – 16, 2008, T University/Govern-ment/Industry Microelectronics Sympo-sium, Location: University of Louisville, Louisville,KY, USA, Contact: Kevin Walsh, E-Mail:[email protected] or [email protected], Dead-line: Not Available, www: louisville.edu/micro-nano/UGIM2008

July 13 - 17, 2008, @ IEEE InternationalVacuum Nanoelectronics Conference,Location: Wroclaw University, Wroclaw,

Poland, Contact: Jan Dziuban, E-Mail: [email protected], Deadline: Not Available,www: http://www.nstu.ru/edm

July 21 - 25, 2008, T European Electromag-netics Conference, Location: Swiss FederalInst. Of Technology, Lausanne, Switzerland,Contact: Farhad Rachidi, E-Mail: [email protected], Deadline: 1/31/08, www:www.euroem.org

July 27 – August 1, 2008, T International Con-ference on the Physics of Semiconductors,Location: Rio de Janeiro, Brazil, Contact: ICPS, E-Mail: [email protected], Deadline:3/1/08, www: icps2008.org

August 20 - 24, 2008, T International Confer-ence on Hot-Wire (Cat-CVD) Process, Loca-tion: Contact: Karen Gleason, E-Mail:[email protected], Deadline: Not Available,www: Not Available

September 7 - 12, 2008, T Electrical Over-stress/Electrostatic Discharge Symposium,Location: Westin La Paloma, Tucson, AZ, USA,Contact: Lisa Pimpinella, E-Mail: [email protected],Deadline: Not Available, www:http://www.esda.org/index.htm

September 9 - 11, 2008, @ IEEE InternationalConference on Simulation of Semiconduc-tor Processes and Devices, Location: YumotoFujiya Hotel, Hakone-machi, Japan, Contact:Kazuya Matsuzawa, E-Mail: [email protected], Deadline: Not Available,www: http://www6.eie.eng.osaka-u.ac.jp/sis-pad/2008/

September 21 - 24, 2008, T InternationalSymposium on Ultra Clean Processing ofSilicon Surfaces, Location: Oud Sint-Jan Con-vention Center, Brugge, Belgium, Contact: Confer-ence Organizer, MOMENTUM, E-Mail:[email protected], Deadline: 3/31/08,www: http://ucpss.org/

September 21 - 24, 2008, T IEEE Custom Inte-grated Circuits Conference, Location: DoubleTree Hotel, San Jose, CA, USA, Contact: MelissaWiderkehr, E-Mail: [email protected],Deadline: Not Available, www: http://www.ieee-cicc.org

September 23 - 26, 2008, T InternationalConference on Solid-State Devices andMaterials, Location: Tsukuba International Con-gress Center, Ibaraki, Japan, Contact: Naomi Kut-suna, E-Mail: [email protected], Deadline:Not Available, www: www.ssdm.jp

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-by Ravi Todi

Come join us on Sunday evening, 9December, 5:00-7:00 p.m. at theWashington Hilton and Towers Hotelfor an EDS sponsored, career devel-opment strategy session, especiallydesigned for graduate students andyoung professionals, who are Gradu-ates of the Last Decade (GOLD). Thesession includes a seminar on careerdevelopment strategies in today’sglobally competitive world and apanel discussion focusing on careeroptions and career path selectionwith expert panelists from academia,research, design, development andmanufacturing and will be followed

by a golden opportunity for you tomeet with EDS Officers and Adminis-trative Committee (AdCom) membersat a special networking session.Establishing a network with success-ful EDS AdCom members and enjoy-ing some of the other key EDSbenefits (e.g., online access to EDLetters and Transactions and theIEDM proceedings) are some of theprimary reasons for joining EDS. Thisevent will be held in conjunction withEDS’ flagship conference, the IEEEInternational Electron Devices Meet-ing (IEDM), held December 10-12. Forinformation visit the web-site athttp://www.his.com/~iedm/.

Mary Ann Bopp, Manager forCareer Development at IBM, will pre-sent a seminar entitled Career Devel-opment: Imagine the Possibilities.She will talk about how to approach

career development, whether you aretenured in your profession and wantto continue to grow in your field ofexpertise, or you want to change yourcareer path but don’t know how tostart, or you’re fresh out of collegeand are just beginning your careerjourney. The discussion will includehow to use mentoring as a means todeveloping your career, no matterwhether you work in a small compa-ny or large corporation. Leveragingmany relationships throughout yourcareer is instrumental in helping youprogress along a career path; developnew expertise and skills — or justusing a network to “socialize” withinthe company.

For additional details on this firstEDS sponsored GOLD event, pleasecontact EDS GOLD representative, Dr.Ravi Todi at [email protected].

Your Career and Networking with IEEEElectron Devices Society AdCom Members

Your Career and Networking with IEEEElectron Devices Society AdCom Members

14eds04.qxd 9/7/07 3:26 PM

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