EE340 – Introduction to Nanoelectronic Devices T. N. Jackson Center for Thin Film Devices and...

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EE340 – Introduction to Nanoelectronic Devices T. N. Jackson Center for Thin Film Devices and Materials Research Institute, Electrical Engineering, Penn State University

Transcript of EE340 – Introduction to Nanoelectronic Devices T. N. Jackson Center for Thin Film Devices and...

Page 1: EE340 – Introduction to Nanoelectronic Devices T. N. Jackson Center for Thin Film Devices and Materials Research Institute, Electrical Engineering, Penn.

EE340 – Introduction to Nanoelectronic DevicesT. N. Jackson

Center for Thin Film Devices and Materials Research Institute,Electrical Engineering, Penn State University

Page 2: EE340 – Introduction to Nanoelectronic Devices T. N. Jackson Center for Thin Film Devices and Materials Research Institute, Electrical Engineering, Penn.

Life in the 21st Century

Page 3: EE340 – Introduction to Nanoelectronic Devices T. N. Jackson Center for Thin Film Devices and Materials Research Institute, Electrical Engineering, Penn.

Moore’s Law

According to Moore:• ~ 0.7X linear scale factor

• 2X increase in density / 2 years

• Lower cost

• Higher performance (~30% / 2 years)

• At severe competitive disadvantage if don’t have newer technology

• Has been going on for 40 years and will continue “somewhat” for another decade

SD 2007

Page 4: EE340 – Introduction to Nanoelectronic Devices T. N. Jackson Center for Thin Film Devices and Materials Research Institute, Electrical Engineering, Penn.

Moore's Law: # of transistors in a given area doubles every

18 to 24 months

Moore’s Law

1.00

10.00

100.00

1000.00

10000.00

85 87 89 91 93 95 97 99 01 03 05 07

intel 386intel 486intel pentiumintel pentium 2intel pentium 3intel pentium 4intel itaniumAlpha 21064Alpha 21164Alpha 21264SparcSuperSparcSparc64MipsHP PAPower PCAMD K6AMD K7AMD x86-64

M. Horowitz, 2005 IEDM

Co

mp

ute

r P

erf

orm

ance

# o

f Tra

nsi

sto

rsYear

Y. Borodovsky, 2006 SPIE MicrolithographyN.B.: Performance also

improves geometrically

Page 5: EE340 – Introduction to Nanoelectronic Devices T. N. Jackson Center for Thin Film Devices and Materials Research Institute, Electrical Engineering, Penn.

Moore’s Law

4004(1971-2250-10m)

8088(1979-29,000-3m)

80286(1982-134,000-1.5m)

80386(1985-275,000-1.5m)

Early Pentium(1993-3,100,000-0.8m)

Intel 10-Core Xeon Westmere-EX (2011) 2.6 billion transistors

32 nm lithography

8 m

22 nm lithographyIntel 2011 production

HIV virus ~100 nm

45 nm lithographyIntel 2008 production

Page 6: EE340 – Introduction to Nanoelectronic Devices T. N. Jackson Center for Thin Film Devices and Materials Research Institute, Electrical Engineering, Penn.

"If the automobile industry advanced as rapidly as thesemiconductor industry, a Rolls Royce would get a million miles per gallon, and it would be cheaper to throw it away than to park it". Gordon Moore, Intel 

Moore’s Law

"If the automobile industry advanced as rapidly as thesemiconductor industry, a Rolls Royce would cost about $250,000, but have about 1,000,000 steering wheels, 4,000,000 tires, 6,000,000 windows, and carry about

5,000,000 passengers, all very small.” Tom Jackson, Penn State

Source: Dataquest/Intel 12/’02G. Moore, 2003 ISSCC

~3 transistors for each mm to the nearest star

~106 transistors per cell in the human

body

>1020 transistorsshipped in 2010

~1 transistor for each km to the nearest

galaxy

Page 7: EE340 – Introduction to Nanoelectronic Devices T. N. Jackson Center for Thin Film Devices and Materials Research Institute, Electrical Engineering, Penn.

GAME OVER

Page 8: EE340 – Introduction to Nanoelectronic Devices T. N. Jackson Center for Thin Film Devices and Materials Research Institute, Electrical Engineering, Penn.

1

10

101

102

104

105

103

1960 1970 1980 1990 2000 20??

106

Moore’s Law – The End

Moore’s law is now largely irrelevantIncreasingly, computation, control, communication,

et cetera are “free” on the scale of the problem being solved

Furthermore, it’s endingForget the red brick wall, worry about

Maly’s law $

Year

High volume system

cost

Processor chip cost

End ofMoore’s Law

When a distinguished but elderly scientist states that something is possible he is almost certainly right. When he states that something is impossible, he is very probably wrong.

Arthur C. Clarke in Profiles of the Future

Clarke’s first law:

Elderly: In physics, mathematics and astronautics it means over thirty; in other disciplines, senile decay is sometimes postponed to the forties. There are of course, glorious exceptions; but as every researcher just out of college knows, scientists of over fifty are good for nothing but board meetings, and should at all costs be kept out of the laboratory.

Arthur C. Clarke in Profiles of the Future* Wojciech P. Maly, Carnegie Mellon University

Page 9: EE340 – Introduction to Nanoelectronic Devices T. N. Jackson Center for Thin Film Devices and Materials Research Institute, Electrical Engineering, Penn.

Moore’s Law Alternatives New Electronic Progress

CGA320x2004 colors

EGA640x35016 colors

VGA640x48016 colors

XGA1024x76816b color

SXGA1280x102432b color

UXGA1600x120032b color

QWUXGA3840x240032b color

WUXGA1920x120032b color

Primordialooze

Example: displays

Samsung 82”, HDTV, ~12.5×106 TFTs

Page 10: EE340 – Introduction to Nanoelectronic Devices T. N. Jackson Center for Thin Film Devices and Materials Research Institute, Electrical Engineering, Penn.

Large Area Electronics - Displays

Applied Materials/AKT-40K PECVD (Gen 7)

1.88 m x 2.15 m glass plates (~ 57 300-mm wafers)

Electronic progress by scale-up, not scale down

One Gen VII display factory builds ~60,000 ~4 m2 mm panels/month

~3 × 106 m2/year (~730 acres), ~0.1 m2/s, ~5 × 106 kg of glass/year

Gordon Moore, 2003 IEEE ISSCC

Page 11: EE340 – Introduction to Nanoelectronic Devices T. N. Jackson Center for Thin Film Devices and Materials Research Institute, Electrical Engineering, Penn.

Transistors on cloth

OTFTs on non-planar surfaces

a-Si:H active matrix OLED

display

Organic circuits on polyester

substrates

PZT RF MEMS

switches

Low-cost devices and circuits on arbitrary substrates

OTFT/OLED Display

Electronics anywhere

Solution processed organic devices and

circuitsC-Si strain sensors

Photoresist-free patterning

Organic circuits

Nanobiomotors

ZnO Circuits

ZnO Circuits ZnO Circuits