Structural, Process & Costing Report GaN-on-Silicon ...
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COMPLETE TEARDOWN WITH: • Detailed photos and identification • Scanning Electron Microscope and Energy- Dispersive X-Ray analyses of transistor structures • Transmission Electron Microscopy analysis of epitaxy layers • Manufacturing process flow • In-depth economic analysis • Manufacturing cost breakdown • Estimated sales price • Comparison between EPC, Texas Instruments, Transphorm, GaN Systems, and Panasonic GaN-on-Silicon Transistor Comparison 2018 Title: GaN on Si Transistor Comparison 2018 Pages: 200 Date: April 2018 Format: PDF & Excel file Price: EUR 4,990 Bundle offer: with Power GaN 2017 Market and Technology Report by Yole Développement Dive deep into the technology and cost of GaN-on-silicon HEMTs from EPC, Transphorm, GaN Systems, Panasonic and Texas Instruments. switching transistors such as MOSFETs and IGBTs. Nevertheless, the technical details are still unsettled, with every manufacturer presenting its own solution to die design and packaging integration. This brings fierce competition, which will accelerate technical innovation and further lower prices. Moreover, GaN business models are still very different, and in the future we will see supply chain restructuring driven by the main cost factors. Manufacturers propose different approaches for epitaxy, gate structure, device design, and packaging, all focused on solving the problems linked to GaN’s intrinsic properties and its integration with silicon. In this report, System Plus Consulting presents an overview of the state of the art of GaN-on-silicon HEMTs to highlight the differences in design and manufacturing processes, and their impact on device size and production cost. We have analysed different devices at low and medium voltage from EPC, Texas Instruments, Panasonic, GaN Systems and Transphorm. The report includes detailed optical, Scanning Electron Microscope and Transmission Electron Microscope pictures of the packaging, the transistor structures and the epitaxy. This report provides an estimated production cost for the integrated circuit gate driver, transistor, and package. It also compares the different components available on the market. Structural, Process & Costing Report The market for GaN high-electron-mobility transistors (HEMTs) is very appealing, drawing in ever more manufacturers. This factor lowers prices, making GaN devices good competitors for the currently-used silicon-based power Reverse Costing®
Transcript of Structural, Process & Costing Report GaN-on-Silicon ...
COMPLETE TEARDOWN WITH:
• Detailed photos and identification
• Scanning Electron Microscope and Energy-Dispersive X-Ray analyses of transistor structures
• Transmission Electron Microscopy analysis of epitaxy layers
• Manufacturing process flow
• In-depth economic analysis
• Manufacturing cost breakdown
• Estimated sales price
• Comparison between EPC, Texas Instruments, Transphorm, GaN Systems, and Panasonic
GaN-on-Silicon Transistor Comparison 2018
Title: GaN on Si Transistor Comparison 2018
Pages: 200
Date: April 2018
Format: PDF & Excel file
Price: EUR 4,990
Bundle offer: with Power GaN2017 Market and Technology Report by Yole Développement
Dive deep into the technology and cost of GaN-on-silicon HEMTs from EPC, Transphorm, GaN Systems, Panasonic and Texas Instruments.
switching transistors such as MOSFETs and IGBTs.
Nevertheless, the technical details are still unsettled, with every manufacturerpresenting its own solution to die design and packaging integration. This brings fiercecompetition, which will accelerate technical innovation and further lower prices.Moreover, GaN business models are still very different, and in the future we will seesupply chain restructuring driven by the main cost factors. Manufacturers proposedifferent approaches for epitaxy, gate structure, device design, and packaging, allfocused on solving the problems linked to GaN’s intrinsic properties and itsintegration with silicon.
In this report, System Plus Consulting presents an overview of the state of the art ofGaN-on-silicon HEMTs to highlight the differences in design and manufacturingprocesses, and their impact on device size and production cost. We have analyseddifferent devices at low and medium voltage from EPC, Texas Instruments, Panasonic,GaN Systems and Transphorm. The report includes detailed optical, ScanningElectron Microscope and Transmission Electron Microscope pictures of thepackaging, the transistor structures and the epitaxy.
This report provides an estimated production cost for the integrated circuit gatedriver, transistor, and package. It also compares the different components availableon the market.
Structural, Process & Costing Report
The market for GaNhigh-electron-mobilitytransistors (HEMTs) isv e r y a p p e a l i n g ,drawing in ever moremanufacturers. Thisfactor lowers prices,making GaN devicesgood competitors forthe currently-usedsilicon-based power
Reverse Costing®
TABLE OF CONTENTS
Overview/Introduction
• Executive Summary
• Reverse Costing Methodology
Technology and Market
Company Profile
• EPC
• Texas Instruments
• Transphorm
• GaN Systems
• Panasonic
Physical Analysis
• Low Voltage
EPC: EPC1010, EPC2010C and EPC2045
Texas Instruments: LMG5200
• Medium Voltage
Transphorm: TPH3002PS, TPH3206PS and TPH3208PS
GaN Systems: GS66508P, GS66506T and GS66504B
Panasonic: PGA26E19BA
Texas Instruments: LMG3410
Transistor Manufacturing Process
• EPC
• Texas Instruments
• Transphorm
• GaN Systems
• Panasonic
Cost and Price Analysis
• Summary of the Cost Analysis
• Yield Explanations and Hypotheses
• Low Voltage
EPC: EPC1010, EPC2010C, EPC2045 and EPC2040
Texas Instruments: LMG5200
• Medium Voltage
Transphorm: TPH3002PS, TPH3206PS and TPH3208PS
GaN Systems: GS66508P, GS66506T and GS66504B
Panasonic: PGA26E19BA
Texas Instruments: LMG3410
Performed byPerformed by
AUTHORS:
Power Electronics and CompoundSemiconductors. Elena holds a Masterin Nano-technologies and a PhD inPower Electronics.
Dr. Elena Barbarini
Elena is in charge ofcosting analyses for
to setup its laboratory. He previouslyworked at Atmel NantesTechnological Analysis Laboratory asfab support in physical analysis, and atHirex Engineering in Toulouse.
YvonLe Goff(Lab)
Yvon has joined SystemPlus Consulting in 2011
ANALYSIS PERFORMED WITH OUR COSTING TOOLS POWER COSIM+, POWER PRICE+ AND IC PRICE+
System Plus Consulting offers powerfulcosting tools to evaluate theproduction cost & selling price fromsingle chip to complex structures.
POWER CoSim+ is a process basedcosting tool used to evaluate themanufacturing cost per wafer usingyour own inputs or using the pre-defined parameters included in thetool.
POWER Price+ is a parametric costingtool used to evaluate themanufacturing cost of devices usingfew process related inputs.
IC Price+ The tool performs thenecessary cost simulation of anyIntegrated Circuit: ASICs, micro-controllers, DSP, memories,smartpower.
Power CoSim+ Power Price+
semiconductors. She has deepknowledge of chemical and physicaltechnical analyses. She previouslyworked for 20 years at Atmel’s NantesLaboratory.
VéroniqueTroadec (Lab)
Véronique is in charge ofstructure analysis of
IC Price+
KEY FEATURES OF THE REPORT:• In-depth analysis of GaN’s penetration in different
applications • State-of-the-art GaN power devices
• Description of the GaN power industrial landscape, from epitaxy and device design to device processing
• Discussion of GaN power market dynamics, and more.
COMPLEMENTARY REPORT
Power GaN 2017: Epitaxy, Devices, Applications, and Technology Trends– by Yole DéveloppementThe GaN power device supply chain is acting to support market growth.
Bundle offer possible for the GaN on Si Transistor Comparison 2018 Report by SystemPlus Consulting, contact us for more information.
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Performed by
More than 60 reports released each year on the following topics (considered for 2018):
Texas Instruments LMG3410 -600V GaN FET Power Stage
EPC2045 100V GaN-on-Silicon Transistor
Panasonic 600V GaN HEMT PGA26E19BA
The first high-voltage driver-integrated solution, from TexasInstruments.
Take a look at the fifth generation ofEPC’s low voltage transistor.
Panasonic adopts a DFN 8x8 packagefor its normally-off GaN HEMTstructure.
Pages: 100Date: July 2017Full report: EUR 3,490*
Pages: 82Date: September 2017Full report: EUR 3,490*
Pages: 72Date: May 2017Full report: EUR 3,290*
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