Specification of MEMS silicon microphone€¦ · Best sound electronics V4.0 F6-(A)UMOE-D120R38-4P...

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Best sound electronics V4.0 F6-(A)UMOE-D120R38-4P Differential Mode / Multiple Power Mode / Ultra High AOP / Ultra High SNR / Narrow Sensitivity / Wide-Band OMNI-DIRECTIONAL BOTTOM PORT F6-(A)UMOE-D120R38-4P F6-(A)UMOE-D120R38-4P Ultra

Transcript of Specification of MEMS silicon microphone€¦ · Best sound electronics V4.0 F6-(A)UMOE-D120R38-4P...

Page 1: Specification of MEMS silicon microphone€¦ · Best sound electronics V4.0 F6-(A)UMOE-D120R38-4P 2 1. INTRODUCTION • Analog MEMS Microphone • Differential Mode & Single Mode

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F6-(A)UMOE-D120R38-4P

Differential Mode /

Multiple Power Mode /

Ultra High AOP / Ultra High SNR /

Narrow Sensitivity / Wide-Band

OMNI-DIRECTIONAL

BOTTOM PORT

F6-(A)UMOE-D120R38-4P

F6-(A)UMOE-D120R38-4P

Ultra

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1. INTRODUCTION

• Analog MEMS Microphone

• Differential Mode & Single Mode

• Bottom Port Type - Sensitivity is Typical -38dBV/Pa

• Multiple Power Mode – Low-Power Mode(LPM), Standard Mode(STM)

• UHA(Ultra High Acoustic Overload Point (AOP)) – Min. 135dB SPL at 1(@STM)

• UHS(Ultra High Signal to Noise Ratio(SNR)) – Typical 70dB (A-weighted, 20~20, @STM)

• Narrow Sensitivity – +/-1dB

• Wideband Frequency - ±2dB at 50 ~ 12000 (reference page 7)

• Omni-directional

• RF Shielded - with embedded Capacitor

• Compatible with Sn/Pb and Halogen-free solder process

• RoHS compliant

• SMD reflow temperature of up to 260 for over 30 seconds

3. MODEL NO.

F6-(A)UMOE-D120R38-4P

2. APPLICATIONS

• Smartphones

• Ear-sets, Bluetooth Headsets

• Smart Speaker, Set Top Box

• Tablet Computers

• Wearable Devices

• Electrical Appliances

• Voice Recognition Systems of Appliances

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Parameter Absolute maximum rating Units

Vdd to Ground 3 V

OUT to Ground -0.3 to Vdd+0.3 V

Input Current to Any Pin 1 mA

3

Parameter Conditions Min Typ Max Units

Directivity Omni-directional

Supply Voltage 1.52 - 3.0 V

Power Mode

Voltage Range

Low-Power Mode 1.52 1.8 1.9 V

Standard Mode 2.29 2.4 3.0 V

Mode Switching Voltage 1.9 2.1 2.29 V

Vdd Ramp-up Time Tolerance ±10% 0.001 - 5

Supply current during start-up - 2 - mA

Start up Time - 10 30

Restart Time - 10 15

Mode Change time - 10 -

Reset release Voltage - - 1.4 V

Brown out Voltage 1.1 1.2 - V

4. ABSOLUTE MAXIMUM RATINGS

Caution : Stresses above those listed n “Absolute maximum ratings” may cause permanent damage to the device.

These are stress ratings only. Functional operation at these or any other conditions beyond those indicated

under “ELECTRO-ACOUSTIC CHARACTERISTICS” is not implied. Exposure beyond those indicated under

“ELECTRO-ACOUSTIC CHARACTERISTICS” for extended periods may affect device reliability.

5. GENERAL MICROPHONE SPECIFICATIONS

Test Condition : 23 ± 2, Room Humidity = 55 ± 20 %, VDD=1.8V, fclk = 2.4, SELECT Pin is grounded,

CLOAD = 1, unless otherwise noticed

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6. ELECTRO-ACOUSTIC CHARACTERISTICS

Test Condition : 23 ± 2, Room Humidity = 55 ± 20 %, unless otherwise noticed.

Standard Mode (STM)

Test Conditions : Vdd=2.4V

Parameter Conditions Min Typ Max Units

Directivity Omni-directional

Supply Voltage (Vdd) 2.29 2.4 3.00 V

Sensitivity

(S)

94dB SPL at 1kHz, 0=1V/Pa, Differential -39 -38 -37dBV/Pa

94dB SPL at 1kHz, 0=1V/Pa, Single-ended - -44 -

Output Impedance

(ZOUT)

94dBSPL at 1kHz, Differential - - 200

Ω94dBSPL at 1kHz, Single-ended Output_P(+) - - 100

94dBSPL at 1kHz, Single-ended Output_N(-) - - 100

Current Consumption Vdd=2.29 ~ 3.0V 120 - 230

Signal to Noise Ratio

(SNR)

94dBSPL at 1kHz, A-weighted (20~20),

Differential- 70 -

dB(A)

94dBSPL at 1kHz, A-weighted (20~20),

Single-ended- 56 -

Equivalent Input Noise

(EIN)

94dBSPL at 1kHz, A-Weighted (20 ~20),

Differential- 24 -

dB(A)SPL

94dBSPL at 1kHz, A-weighted (20~20),

Single-ended- 38 -

Power Supply Rejection

(PSR)

100mVp-p square wave at 217Hz,

Vdd=1.8V, A-weighted- -119 - dBV(A)

Power Supply Rejection

Ratio (PSRR)

200mVp-p sine wave at 1kHz,

Vdd=1.8V- 92 - dB

Total Harmonic Distortion

(THD)

94dB SPL at 1kHz - - 0.1

%129dB SPL at 1kHz - - 1.0

132dB SPL at 1kHz - - 3.0

133dB SPL at 1kHz - - 5.0

Acoustic Overload Point

(AOP)THD>10% at 1kHz 135 136 - dBSPL

DC Output VoltageVdd=2.29 ~ 3.0V, Single-ended Output_P(+) - 1.35 -

VVdd=2.29 ~ 3.0V, Single-ended Output_N(-) - 1.35 -

Start-up timeSingle-ended Output_P(+) - - 100

msSingle-ended Output_N(-) - - 100

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Test Condition : 23 ± 2, Room Humidity = 55 ± 20 %, unless otherwise noticed.

6. ELECTRO-ACOUSTIC CHARACTERISTICS

Low-Power Mode(LPM)

Test Conditions : Vdd=1.8V

Parameter Conditions Min Typ Max Units

Directivity Omni-directional

Supply Voltage (Vdd) 1.52 1.8 1.9 V

Sensitivity

(S)

94dB SPL at 1kHz, 0=1V/Pa, Differential -39 -38 -37dBV/Pa

94dB SPL at 1kHz, 0=1V/Pa, Single-ended - -44 -

Output Impedance

(ZOUT)

94dBSPL at 1kHz, Differential - - 200

Ω94dBSPL at 1kHz, Single-ended Output_P(+) - - 100

94dBSPL at 1kHz, Single-ended Output_N(-) - - 100

Current Consumption Vdd=1.52 ~ 1.9V 40 - 100

Signal to Noise Ratio

(SNR)

94dBSPL at 1kHz, A-weighted (20~20),

Differential- 69 -

dB(A)

94dBSPL at 1kHz, A-weighted (20~20),

Single-ended- 54 -

Equivalent Input Noise

(EIN)

94dBSPL at 1kHz, A-Weighted (20 ~20),

Differential- 25 -

dB(A)SPL

94dBSPL at 1kHz, A-weighted (20~20),

Single-ended- 40 -

Power Supply Rejection

(PSR)

100mVp-p square wave at 217Hz,

Vdd=1.8V, A-weighted- -117 - dBV(A)

Power Supply Rejection

Ratio (PSRR)

200mVp-p sine wave at 1kHz,

Vdd=1.8V- 91.5 - dB

Total Harmonic Distortion

(THD)

94dB SPL at 1kHz - - 0.1

%123dB SPL at 1kHz - - 1.0

125dB SPL at 1kHz - - 3.0

127dB SPL at 1kHz - - 5.0

Acoustic Overload Point

(AOP)THD>10% at 1kHz 132 133 - dBSPL

DC Output VoltageVdd=1.52 ~ 1.9V, Single-ended Output_P(+) - 0.9 -

VVdd=1.52 ~ 1.9V, Single-ended Output_N(-) - 0.9 -

Start-up timeSingle-ended Output_P(+) - - 100

msSingle-ended Output_N(-) - - 100

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VP

MEMS Unit

AMP

Pin1

Pin2

Pin4

(d) 1uF

Vdd

Output_N(-)

GND

Microphone

(b)

AMP Output_P(+)

(a)

(d) 1uF

Pin3

Dotted section

Represents Microphone

External Gain = -R1/R2

(Set by customer)

Vdd (Pin1)

GND (Pin4)

Vout_P (Pin3)

Vout_N (Pin2)

R2

R2

R1

R1

8. RECOMMENDED INTERFACE CIRCUIT

MEMS Unit : Membrane & Back Plate (transmit the electric signal modified from sound signal to ASIC)

ASIC : Impedance converter (Mechanical Signal Electric Signal)

Vdd : Power Supply (Operation of ASIC)

Rectifier Capacitor : Removed Direct Current Factor

Output : Output Signal of Microphone’s Sensitivity

GND : Ground

7. MEASUREMENT CIRCUIT

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9. TYPICAL FREQUENCY RESPONSE CURVE(FAR FIELD)

Far Field Measurement Condition

Temperature : 23 ± 2 Supply Voltage : 2.4V (STM) / 1.8V (LPM)

Acoustic stimulus : 1Pa ( 94 SPL at 1 ) at 50 from the loud-speaker.

The loud-speaker must be calibrated to make a flat frequency response input signal.

Position : The frequency response of microphone unit measured at 50 from the loud-speaker.

Frequency

[Hz]

Lower Limit

[dBr]

Upper Limit

[dBr]Note

50 -2 +2

0dBr = dBV/Pa at 1

150 ~ 1000 -2 +2

1000 0 0

1000 ~ 12000 -2 +2

15000 -2 +6

Figure 3. Typical IDD vs VDD

Figure 2. THD vs. Input Level

Figure 4. Typical Power Supply Rejection (PSR) vs. Frequency

Figure 1. Typical Frequency Response, Normalized to 1

Note : Band Frequency Range

1. Narrow Band : 300 ~ 3.42. Wide Band : 100 ~ 73. Super Wide Band : 50 ~ 14

Frequency Mask Specification

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4.0

0.1

3.00±0.11.20±0.1

SMD Type

※ PCB design & Pin size can be changed by model No.

10. MECHANICAL CHARACTERISTICS

Lettering

MEUV1.0

F6 01 18

Version1

Year

Week

E : Engineering Sample

P : Pre-Production

M : Mass Production

Version2

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Item Dimension Tolerance (+/-) Units

Length (L) 4.00 0.10 mm

Width (W) 3.00 0.10 mm

Height (H) 1.20 0.10 mm

Acoustic Port (AP) Φ 0.6 0.10 mm

Dimensions (Unit : mm)

Pin # Pin Name Type Description

1 Power (VDD) Power Power Supply

2 Output_N (Vout) Signal Output Signal (-)

3 Output_P (Vout) Signal Output Signal (+)

4 GND Ground Ground

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- Mechanical dimensions & Pad Lay-out

Note : All ground Pins must be connected to ground.

“4”Pin must be sealed by solder paste on the PWB.

General Tolerance ±0.08mm.

11. MECHANICAL CHARACTERISTICS

TOP VIEW SIDE VIEW BOTTOM VIEW

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Recommended

PCB land pattern

(Unit : mm)

Recommended

solder stencil pattern

(Unit : mm)

( thickness of metal mask: 0.10T)

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11. MECHANICAL CHARACTERISTICS

- Recommended Land Pattern & Stencil Pattern

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12. RELIABILITY TEST CONDITIONS

Note : After test conditions are performed, the sensitivity of the microphone

shall not deviate more than ±1dB from its initial value.

TEST DESCRIPTION

TEMPERATURE

STORAGE

[High Temperature Storage]+80±3 x 200hrs (The measurement to be done after 2 hours of conditioning at room temperature)

[Low Temperature Storage]-30±3 x 200hrs (The measurement to be done after 2 hours of conditioning at room temperature)

TEMPERATURE

CYCLE

(-25±2 x 30min -> +20±2 x 10min -> +70±2 x 30min -> +20±2x 10min) x 5cycles (The measurement to be done after 2 hours of conditioning at room temperature)

THERMAL SHOCK(+85±2 -> -40±2Change time : 20sec) x 96cycles Maintain : 30min(The measurement to be done after 2 hours of conditioning at room temperature)

HIGH

TEMPERATURE

AND HUMIDITY

+85±2, 85±%RH, Bias(3.6V) x 200hrs (The measurement to be done after 2 hours of conditioning at room temperature)

+70±2, 95±%RH x 200hrs (The measurement to be done after 2 hours of conditioning at room temperature)

ESD

(Electrostatic

Discharge)

Air discharge : ±8kV, ±10kV, ±12kV, ±15kV Vdd, Vout, GND Pad each 5 times (Non-ground)

Contact discharge : ±2kV, ±4kV, ±6kV, ±8kV Vdd, Vout, GND Pad each 5 times (Non-ground)

VIBRATIONSignal 5Hz to 500Hz, acceleration spectral density of 0.01g²/Hz in each of 3 axes, 120 min in each axis (360min in total)

DROPTo be no interference in operation after dropped to steel floor18 times from 1.52 meter height in state of packing

REFLOW

SENSITIVITY5 reflow cycles. Refer to reflow profile from specification item 16.

13 . TEMPERATURE CONDITIONS

13.1 STORAGE TEMPERATURE : -40 ~ +100

13.2 OPERATING TEMPERATURE : -40 ~ +100