Space Electronics - NASA...Space Electronics A challenging world for designers Christian Poivey...
Transcript of Space Electronics - NASA...Space Electronics A challenging world for designers Christian Poivey...
Space Electronics A challenging world for designers
Christian Poivey Kenneth A. LaBel
NASA-GSFC
D C I W - Soac. Radlaon Enecls u d e d byChr(m Pavev. Badeiur. h-. November Z6. XW I
Designing Electronics for Space
-Low power -High reliability *Harsh environment
*Thermal *Mechanical ~Electro-magnetic *Radiation
oclsO4 - Radtam E l ids m e d by C h S m b v q Emdew& Fr- Nwabar 28 Z 0 4
https://ntrs.nasa.gov/search.jsp?R=20050157056 2020-04-28T23:24:23+00:00Z
Outline The Space Radiation Environment The Effects on Electronics The Environment in Action Hardening Approaches to Commercial CMOS electronics - CMOS devices vulnerabilities - Hardening approaches
Conclusion
Atomis Interactions - DireetWmU6n
/ Interactinn with Nucleus
- Indirect hlzatlon /
6frp://~~~.s~ci.~u/hsr/rticmos/~~oma11ce/at1amaIies/biger.h1mI - Nucleus is Dlspl8cd oclm - space Mla lon Efledr wesenled by Chn?Pm Pwy. W e a r y Fr-. Novemk26 2001
Space Radiation Environment
U i k M Science, Inc. Qf Japan, by K. En@
or radioisotope thermal generators (RTGs) Atmosphere and terrestrial may see GCR and secondaries
Sunspot Cycle: An Indicator of the Solar Cycle
2 2 6 5 0 D-, rn
5 cn
Length Varies from 9 - 13 Years 7 Years Solar Maximum, 4 Years Solar Minimum
DCISOI - S p e Rrdialton Eflecls p a n l e d by CMr(tin Powey 8adeaux R a m . Novmbef 26 Z3M 5
+
Solar Particle Events
Cyclical (Solar Max, Solar Min) - 1 1 -year AVERAGE (9 to 13) - Solar Max is more active time period
Two types of events - Gradual (Coronal Mass EjWens - -
CMEs) Proton rich
- Impulsive (Solar Flares) Heavy ion rich \
Abundances Dependent on Radial Distance from Sun Particles are Partially Ionized - Greater Ability to Penetrate
Magnetosphere than GCRs
I
DClW - Space Radoaan Eflecls p e n l e d by CMrlnsn h e y W a u x . Frame Novembet a ZOOI 6
Solar Proton Event - October 1989
Proton Fluxes - 99% Worst Case Event
z 2 B 2 $ 5 . V) .- c 3
6
: &pabalEndienl IcHIYtm
o a w - spke Radlalm Eiieds -led by Cmslla, W e y . Bordeaux Fr-, Novemba 25.2od 7
Free-Space Particles: Galactic Cosmic Rays (GCRs) or Heavy
Ions Definition - A GCR ion is a charged particle CREME 96, Solar Mlnlmum, 100 mils (2.54 mm) A1
(H, He. Fe, etc) - Typically found in free space
(galactic cosmic rays or GCRs) 4 Energies range from MeV to a GeVs for particles of concern
P for SEE 3E Origin is unknown
a,
C
- Important attribute for impact f on electronics is how much energy is deposited by this 5 particle as it passes through a semiconductor material. This
" - w R1
LET (MeV-cm21mg) is known as Linear Energy Transfer ar LET (dEldX). m ~ -
C-y Tecttpology SensfBvt#y
DClW - Spats Radbalmn E k l n p e w l e d by Ctmdlm P w e y Bordear Fr-. Wmba 26 2od 8
Trapped Particles in the Earth's Magnetic Field: Proton & Electron Intensities
L-S hell
Solar Cycle Effects: Modulator and Source
WarrM9lcimm - Trapped Proton Levels Lower,
Electrons Higher - GCR Levels Lower - Neutron Levels in the Atmosphere
Are Lower - Solar Events More Frequent (L
Greater Intensity - Magnetic Storms More Frequent --
> Can Increase Particle Levels in Belts
Solar Mlnlmum - Trapped Protons Higher.
Electrons Lower Light bulb shaped CME
- GCR Levels 1 . courtesy of SOHO/LASCO C3 Instrument
- Neutron Levels ~n rhe Atmosphere Are Higher
- Solar Events Are Rare DClSOl - Sp- Rdlaion EAeslr perenled by Chnslan h e y Rordemx Frame ~ a v m b n 2 6 m01 10
Outline The Space Radiation Environment
* The Effe6ts on E.lac;t.mnics * The Environment in Action
Hardening Approaches to Commercial CMOS electronics - CMOS devices vulnerabilities - Hardening approaches
Conclusion
Atomic Interactions - Direct knization
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Radiation Effects and Spacecraft
High energy particles loose energy when they cross electronic parts materials and cause radiation effects - Long-term effects
Total ionizing dose (TlD) Displacement damage
- Transient or single particle effects (Single event effects or SEE)
Soft or hard errors
- - nit AEUVC PU~II sww GAPS) Imager
H e r iivadiaiion with heavy ions at T k a k ALM UnQwsffy CpIptrqn
DClw - Sp&e Radlann Enecls pevnled by Chs!lar P w s y Bardaaux Flare November 26 ZOW 12
Total Ionizing Dose (TID) Cumulative long term ionizi'ng damage due to protons & electrons - Incident particles transfer energy to material through electron hole
creation. Holes are trapped within devices' oxides or the interfaces oxidelsilicon.
Effects - Increase of Leakage Currents - Degradation of logical input levels and noise
margin - Degradation of fan out - Degradation of propagation delays - Functional Failures
Unit of radiation: dose in Gray or rad - 1 Gray = 100 rad = 0.01 JIKg
DClSX - Space Radlamn Eneclr -led by Chdtan Pdvey. BcaIcaux. Frarrr. N m b a 26. itCd 13
TID-induced threshold voltage shifts effects in CMOS devices
10
AV.c 0 A V p 0 s . 1P--
- ~ a h s AVd<O Before
.
1C1-- 1 7 . . . . . . . . . . . . .
600 350 260 180 130 90 65 I I I I Technology Generation (nm)
Gab Voltage M AftPr' O m , 1Em0r
When tox < 5 nm, significant hole tunneling out of the gate oxide occurs, resulting in negligible number of remaining holes: AVO, - AV,, - 0
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TID-induced intra device edge leakage
Pdmary Electron Current Flow
I Polysilicon \ -
- (After Alexander)
Gate
Field Oxide
Fox Thin oxide Leakage Boundary \A (FL)
(not shown) A
'7 Edge C u m t n* Source Components
Edge Leakage - Basic Mechanism
(After Brisset)
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NMOS
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Example of Edge Leakage for 0.3610.1 8 pm NMOS Transistor
IE-I3
IE-15 -0.5 0 0.5 1 1.5 2
Gate Voltage (V)
dm* kabeq r n b f 2004
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Inter device isolation-oxide leakage
Inversion of field oxide results in leakage path between N+ contact (Vdd) in the N- well and N+ source I (GND)
Field oxide leakage paths can also span N+ sourceldrain regions between adjacent N- channel transistors
I Field oxide leakage path
Example of TID degradation for 0.18 pm CMOS SRAM
SRAM. CMOS 0.18 pm process 1AOE43 -
1.20E43 -
1.00E43 - - 5 2 8.OOE.M - u
C ,.OOE.M u S
4.00E.M
2.00E.M
O.OOE*00 0 50 100 150 200 250 300 350
Total dose (kradSi)
No significant degradation up to 90 krad-Si Sufficient for most space applications, typical dose levels:
-Geostationary Orbit, 10 years: 50 krad-Si *Low Earth Orbit, 5 years: 20 krad-Si
DCIW - S- RadtAon Eneclo pannled by Cmslca Powey Wear% R a m . Nwnnber 2B.20M 19
Displacement Damage (DD) Cumulative long term non-ionizing damage due to protons, electrons, and neutrons - Incident particles transfer energy by elastic or inelastic
collisions with atoms of the devices material (Silicon). Structural defects are created on the crystallographic structure.
Effects - Minority carrier lifetime in the semiconductor is decreased
Increase leakage currents Decrease gain of bipolar transistors
- Important for opto-electronics and linear bipolar devices, not significant for CMOS devices.
Unit of radiation: - equivalent fluence for a selected electron or proton energy
in particleslcm2
D E l h - &aa uitationEff~rr p e n l e d b y CtVi~rar PWey Borscaur. Rarrc'Novemh iB. &4 20
10 MeV proton5
DD damage example, CCD
60 MeV Proton:
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Single Event Effects (SEES) Ionizing effect caused by a single charged parti - Heavy ions
Direct ionization - Creation of a very dense
plasma of electrons hole pairs
- The pairs that do not recombine are separated by the junction electric field, and a current spik is generated.
- Protons for sensitive devices Nuclear reactions for standard devices
Unit of radiation: - LET (Linear Energy Transfer) in MeVcm2/mg
If the LET of the particle (or reaction) is greater than the amount of energy or critical charge required, an effect may be seen
D C l W - Space Radlaloo EUecls mesenled by C h r t l s l h e y Bordeaux Frane Novaober 26 2IW 22
Single Event Upset (SEU)
Bitline Bitline
Wen SEU current I,,, exceeds restoring current from crosscoupled inverter such that 11 the node vokage
drops below V&! fol oo long, an upset - I
- - (After Baumann)
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SEU trend on SRAM
*-.--- - - -1KOEW
-At fixed voltage SER decreased by 13% per
4s.. \ generation. - *At the nominal voltage -
3 for each generation (14% s ,, scaling per generation), the SER sensitivity has 1Z
increased by about 8%
3 L
per generation. a; F k 0% 030 Trchnolo~ 0 (I generanon om Om eIrnE:
mr Wzuch& IEbM 0 3
~clw - S- Radldlon E n ~ l s peerued by Cmrt la b e y BMdemx Frawe November 28 XID( 24
Single Event Latchup (SEL) in CMOS circuits
SCR
VDD
+-I produces 1>1,, $#,,>l and VDD>VH, then latChUp O W - .
Latchup can cause circuit lockup and/or catastrophic device failure
As technology scales. soon Vm<VH and latchup is no longer, a proble?~ Epi reducedR, 5 increase - latchup threshold
Single Event Transient (SET)
(After Baumann)
Voltage transients can "---I - ~ l t
propagate through combinatorial logic - Indistinguishable from
normal signals - Incorrectly latched if I arrive at clock edge Total Error = SET + SKI'
Errors rates now depend A 1
2 on clock frequency o A
Total error rate is the sum of the SEU + SET contributions
m Frequency
-
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-
Other Single Event Effects
Transient propagation in CMOS
Multiple Event Upset (MEU) Several blts ~ 0 r ~ p t e d by a single Memories particle
Single Event Functional Loss of normal operation Complex devices with bullt-in Interrupt (SEFI) state machinelcontrol sections
!Single Event Burnout (SEE) High current condition !
BJT. N channel power MOSFETs
If transient pulse width is greater than critical width, the pulse will propagate indefinitely through combinatorial logic. For pulses shorter than the critical transient width, the transient will be attenuated. Critical width decreases with feature size - Estimate of heavy ion transient
pulse width is 100-200 ps - SETS important for CMOS at or
below 0.25 p m technology node
Single Event Gate Rupture 1SFC.I
Inverter Chaln lnflnlte Propagation
I000 100 10
Feature Size (nm)
I e dielectric Power MOSFETS. flash PROM,.
A M r ~ b , EW-H @4 Dclsw - spae Rajld~on EKecls p&ed by Cmdlan Pomy. Bordeaux Fr-. November 26 XXY
27
hcstfuclive event in a MOSFET wsd in a
DGDC Coneetter
oclw - spaDe Radtdan Elfeclo pesenled by Chdtm h e y w a u x Frarce. November 26. XXY 111
Outline The Space Radiation Environment The Effects on Electronics The Environment in Action Hardening Approaches to Commercial CMOS electronics - CMOS devices vulnerabilities
I - Hardening approaches
Conclusion
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29
Radiation Effects on Electronics and the Space Environment
Three portions of the natural space environment contribute to the radiation hazard - -Solar particles
Protons and heavier ions - SEE, TID, DD
- Free-space pactic1ss GCR
- For earth-orbiting craft, the earth's magnetic field provides some protection for GCR --- - 3tL
l h e run acts as a d u j a t w and - Trapped partids (in the belts) source In the snrce enuimnment Protons and electrons including the South Atlantic Anomaly (SAA)
- SEE (Protons) - DD, TID (Protons, Electrons)
SAA and Trapped Protons: Effects ef the Asymmetry in the Proton Belts on
SRAM Upset Rate at Varying Altitudes on CRUXIAPEX Hutaehi IM'Altitude li5Okm - 750km HIIachl 1M Altltude 125Okm - 1350km
90
IS
10
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30 . I5 Q " 2 -1s
-30
AS
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Lenpllude
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Background environment and solar events SRAM upset rate versus time on Orbview-2 SSRs
November 9.2000
April IS. 2001 November 50.2001
' .L I ..
Recent Solar Events - A Fe.w Notes and Implications
In Oct-Nov of this year, a series of X-class (X-451) solar events took place - High particle fluxes were noted - Many spacecraft performed safing maneuvers - Many systems experienced higher than normal (but correctable) data error rates - Several spacecraft had anomalies causing spacecraft safing - Increased noise seen in many instruments - Drag and heating issues noted - Instrument FAILURES occurred - Two known spacecraft FAILURES occurred
Power grid systems affected, communication systems affected ...
I%..
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SOH0 LASCO C2 of the Solar Event
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Solar Event Effect - Solar Array Degradation on CLUSTER Spacecraft ~ ~ . ~ L ~ - o I ~ O * ~ ~ N - % ~ O O I - S ~ ~ O O > . ~ ~ ~ ~ ~ ~ =
M l l ( o ~ a . r u l d ( L h D m O I Y I Y --L~MhlbcWZ%--> - ~ ~ ~ ~ ~ ~ ~ ~ I S ~ ~ ~ I ~ ~ ~ D . D . D . I I - D D D D - me.&*-.IL Tb.-p.lrnmuh.u- ZMYhM.aP
r...*...,,,.ar D.C".IIr .*. p.D.*."l.U.l.I..,,.
Many other spacecraft to noted degradation as well.
OCISOI - spas w ~ a o n Enecls pa&@ by Chdtan Pwey Bx*ar Fr- Novemkr 26 2001 3s
Science Spacecraft Anomalies During Recent Solar Events
Science Instrument Anomalies During Recent Solar Events
DCIS(LI - Spse Radldon E l l ~ t r pesecied by Cmslln %ey Bordeaul Fr- NoMmber 2U 2000 37
Orbits affected on several spacecraft Power system failure - Malmo, Sweden
High Current in power transmission lines - Wisconsin and New York
Communication noise increase FAA issued a radiation dose alert for planes flying over 25,000 ft
Outline The Space Radiation Environment The Effects on Electronics The Environment in Action Halrdeining Appro;achoe to Cornrrie~d CMOS ehtronics - CMOS devices vulnerabilities - Hardening approaches
Conclusion
Atomic Interactions - Direet fonizatian / I
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D C I ? ~ - Space Radtamn EUscls peM& by Chsitn Ponry. Bade- name. m b o ZB. ZOW 39
Hardening by design to radiation effects
Layout: Guard bandlGuard ring Spacing Body ties
SEU hardening at primitive cell level
Increased Drive Current
(After Bare) I -Increase Drive current I, (m) increasing restoring current *No speed penalty -Area penalty a I,
Resistive Coupling
t " t
I 1 (After Dodd)
*Decrease response tine by increasing RC with feedback resistors
*Resistors are not an option at many commercial foundries
-Speed penalty *Small area penalty
SEU hardening at macrocell level Design enhancements: deal with SEU occurring in primitive cells - Hardened data latches: DICE, HIT,..
Uses a 4-node redundant structure
*Stores data as 101 0 or 0101
*Relies on dual node feedback control
Two nodes must be struck simultaneously to generate an upset
*Decrease in effective sensitive area
(Afler Calin)
SEU hardening at macrocell level Design enhancements: deal with SEU occurring in primitive cells - redundancies
-Triple Module Redundancy (TMR) Triple logic + vote =Reduce effective sensitivity
-2 latches must be struck simultaneously to get an error
-Does not increase tolerance of individual latches -- 3x-4x powerlarea
Reset 7-7QT-b
(After Black)
oclsoo - spase Weamn E n d s w e d by Cmsja poMv, Eardeaux, France. m b n 26. m04 43
SEUlSET hardening at macrocell level :---------------------------,----------------------------, I
IN I
CLOCK - I
OUT
: Temporal Sampling ! Asynchronous voting-: :------- ---------- ---- -------- -------------------
By delaying clocks, transient can only be captured at I latch *Voted out
* Can delay data instead of clocks -Sensitive to transients on clock line *Area penalty - 3x - 4x *Speed penalty: llf,, = Ilf, + 2 AT *Many variations on this concept
DC& - ~ ~ ~ ~ ~ ' k a d i a l a n ~ c d r p e S e r n & b y ~ r s n pakey e e a u x Cram ~ove%%f8 % *
SEUlSET hardening at macrocell level
IN
CLOCK
DCIm -Spa;. Radldan EUects prrenled by C h d m b e y w e a r s Frarca November 26 XYW 45
Achieves equivalent of triple spatial redundancy by using same circuitry at three different times With appropriate AT, can be immune to upset from multiple node strikes Immune to transients on: data, clock, asynchronous control, and
synchronous lines
Hardening at the function level
Design enhancement to deal with errors occurring in macrocells Redundancies and voting or lockstep EDACISelf checking
Primary REGENERATION Error CIRCUIT
Watchdog timer
EDAC example: Hamming code
Parity evaluation of different bit combinations allows for m bit correct, n bit detection -Can be used to correctldetect memory output *Can be used to scrub memories
Time between scrubs determines rnax error latency
Single Bit-Error Correct, Double Bit-Error Detect
oclS4 - space Radlann Efl~cf'l pepmlcd by C h s l l a Pavy BDldeavr France November 26.2001 47
Data Bits Check Bits Total bits
1 3 4
2 to 4 4 6 to 8
5 to 11 5 10 to 16
12 to 26 6 18 to 32
27 to 32 7 34 to 39
Outline The Space Radiation Environment The Effects on Electronics The Environment in Action Hardening Approaches to Commercial CMOS electronics - CMOS devices vulnerabilities I Hardening approaches
* €ondwsian
Atomi'c. Interactions
The radiation environment makes the design of electronics for space very challenging High total dose hardness levels can be achieved with state of the art technologies A variety of design techniques exist for mitigating SEE - Area, power, speed penalties depend on chosen
mitigation approach New effects occur for each new technology generation
Conclusion
DCIM - S- Radtdnm Efedo pesmted by Cmsloa m y . Bordeaux. Fram. N w m b a ZB. 2001 49