SILECS CONFIDENTIAL June 2005 Silecs Product Presentation June 2005.

SILECS CONFIDENTIAL June 2005

Silecs Product Presentation

June 2005

SILECS CONFIDENTIALJune 2005

Silecs Spin-on Polymers, Use and Benefits

• SLX28E : Organosiloxane

• SLX28D : Organosiloxane

• SLX24 ULK : Low-K Organosiloxane

• SG200 : Methylsiloxane

• P1DX : Low T cureable Organosiloxane (in development)

SLX28E SLX28D SLX24 ULK SG200 P1DX

Polymer Type

k ~ 3

Organosiloxanek ~ 2.9

OrganosiloxaneLow-k (k < 2.8) Organosiloxane

Methylsiloxane Organosiloxane

UsePMD, sub-Al IMD,

thick film applications, MEMS

PMD, sub-Al IMD, furnace or

UV curable, adhesion promoter

Low-k IMD, devices requiring

low refractive index films

Sub-Al IMD, BPSG leveling, partial and total

etchback planarization

Low temperature cure applications,

optics, CMOS sensor, MEMS

Benefits

High cracking threshold (~2 µm single coat), high

modulus & hardness, gap fill, thermal stability,

adhesion

UV sensitive – high modulus and hardness,

low cure temperature, extremely thin

films

Small pore size and short pore interconnect

length, hardness & modulus,

adjustable k and RI

Low cost, gap-fill and

planarizing dielectric layer

~ 200 C cure temperature,

adhesion, moisture barrier


Silecs SLX28E


SLX28E : Organosiloxane Polymer

1. Measured using MIS structure and Hg-probe. 2. Modulus & hardness based on Nanoindentation of >600nm

thickness films.3. 24-hour water immersion4. Measured at 0.5MV/cm and 23 ºC5. Furnace cure = 450 ºC for 3 hr

SLX28E polymer designed for:

- High thermal stability

- High mechanical properties

- K ~ 3

- High single coat thickness cracking threshold

- Sub-Al BEOL planarization and passivation layers

- Aggressive, high aspect ratio feature fill

- Low etch rate in aqueous HF

- Film stability (no water absorption)

- UV curable

Dielectric constant (1,5) 2.95

Leakage current density (nA/cm2)(1,4)

<0.1

Breakdown field (MV/cm)(1)

>5

Modulus (GPa)(2,5)

10.5

Hardness (GPa)(2,5)

1.5

Refractive index @ 633nm 1.437

Extinction coefficient (visible λ) 0

- ( )Crack threshold single coat nm 2000

( /° )CTE ppm C <20

- (° )Decomposition T cured film C >600

( )Water absorption ∆k(1,3) <0.1

28 SLX E Film Properties


SLX28E : Properties vs. Cure Method

SLX28EFurnace Cure

450 ºC; 1hr

UV Cure @

400 ºC; 5min

(initial results)films baked to 150 ºC prior to

UV cure

Electrical

(k-value) 3.0 2.86

Mechanical

(E / H GPa) 8.2 / 1.1 11.1 / 1.5


SLX28E : Film Properties vs. Furnace Cure T

All cure times in this study are 1 hr. A ramp up

to/from 200 ºC @ 10 ºC/min applied

k vs. Curing Temp.

2.95

3.00

3.05

3.10

3.15

3.20

3.25

3.30

3.35

3.40

3.45

250 300 350 400 450 500 550 600

Curing temp. [C]

K

Modulus vs. Curing Temp.

0

2

4

6

8

10

12

14

16

250 300 350 400 450 500 550 600

Curing temp. [C]

Modulus [GPa]

meas. 1

meas. 2

Hardness vs. Curing Temp.

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

250 300 350 400 450 500 550 600

Curing temp. [C]

Hardness [GPa]

meas. 1

meas. 2

(Stress @ RT - Stress @ 400C) vs Cure Temperature

0

10

20

30

40

50

300 350 400 450 500 550 600

Furnace Cure Temp (C)

Delta Stress (Mpa)


SLX28E : Local Planarization vs. Furnace Cure T

All cure times in this study are 1 hr. A ramp up

to/from 200 ºC @ 10 ºC/min applied

Local planarization, pitch 2,0 µm

40,00

45,00

50,00

55,00

60,00

65,00

70,00

75,00

80,00

85,00

90,00

95,00

100,00

250 275 300 325 350 375 400 425 450 475 500 525 550 575

Cure temperature (C)

DOP (%)Line 100 nm / spacing 1900 nm

Line 200 nm / spacing 1800 nm



350 C

500 C

• Local planarization established during the coat and bake process. Cure temperature has no impact on planarization.

• SLX28E begins cross-linking at ~ 225 ºC. Once the film is cross-linked further thermal process have little effect on planarization.


SLX28E : Feature Fill & HF Resistance

• Complete fill of a highly recessed 500nm wide space through a 10nm wide opening.• The SLX28E within the recessed feature and narrow slot is completely resistant to 25:1 DHF

Al (mostlyeteched)

PECVD SiO2

SLX28E

SLX28E

450 ºC furnace cure for 1hr, SEM cross-section, 25:1 DHF wet etch for 60s

SLX28E

SLX28E

PECVD SiO2

Topography formed by Al-line and cusped CVD SiO2 is used to simulate that found in advanced pre-metal dielectric (PMD) applications.

• No etching of the SLX28E within the TEOS trench features occurs with the partially aqueous HF wet etchant. The TEOS lines features are etched.

• No cracking or other film defects observed

750 ºC RTP cure for 5min, SEM cross-section, partially aqueous HF etch for 60s

SLX28EHF etched TEOS

Si3N4


Silecs SLX28D


SLX28D : Organosiloxane Polymer

SLX28D polymer designed for:

- Reduced furnace cure temperature and time

- High sensitivity to UV cure (photo-crosslinking)

- K < 3

- No silanol or water byproducts

- Film stability (no water absorption)

- Planarization & feature fill

- Adhesion to dissimilar films

- Low etch rate in aqueous HF

1. Measured using MIS structure and Hg-probe. 2. Modulus & hardness based on Nanoindentation of

>600nm thickness films.3. 24-hour water immersion4. Measured at 0.5MV/cm and 23 ºC5. Furnace cure = 450 ºC for 1 hr

Dielectric constant (1,5) 2.90

Leakage current density (nA/cm2)(1,4)

<0.1

Breakdown field (MV/cm)(1)

>5

Modulus (GPa)(2,5)

4.3

Hardness (GPa)(2,5)

0.4



- ( )Crack threshold single coat nm 1000

( /° )CTE ppm C <20

- (° )Decomposition T cured film C >525

( )Water absorption ∆k(1,3) <0.1

28 SLX D Film Properties


SLX28D : Properties vs. Cure Method

SLX28DFurnace Cure

450 ºC; 1hr

UV Cure @

400 ºC; 5min

(initial results)

films baked to 150 ºC prior to UV cure

Electrical

(k-value) 2.87 2.98

Mechanical

(E/H GPa) 4.3 / 0.38 15.3 / 2.1


SLX28D : Film Properties vs. Furnace Cure T

All cure times in this study are 1 hr. A ramp up to/from 200 ºC @ 10 ºC/min applied

Modulus vs. Cure Temperature

0

2

4

6

8

350 400 450 500 550

Curing temp. [C]

Modulus [GPa]

Hardness vs. Cure Temperature

0

0.2

0.4

0.6

0.8

350 400 450 500 550

Curing temp. [C]

Hardness [GPa]

(Stress @ RT - Stress @ 400C) vs Cure Temperature

0

10

20

30

40

300 350 400 450 500 550 600


Delta Stress (Mpa)


SLX28D : Film Properties vs. UV Cure Temperature

Films baked to 150 ºC prior to UV cure; all UV cure times are 5 min.

SLX28D: k vs. UV Cure Temp

2.912.922.932.942.952.962.972.982.99

250 300 350 400 450

UV Cure Temp (C)

Dielectric Constant

SLX28D: Modulus vs. UV Cure Temp

0

5

10

15

20

250 300 350 400 450

UV Cure Temp (C)

Modulus - E (GPa)

SLX28D: Shrinkage vs. UV Cure Temp

0%5%

10%15%20%25%30%

250 300 350 400 450

UV Cure Temp (C)

Bake to Cure %Shrinkage

SLX28D: Hardness vs. UV Cure Temp

0

0.5

1

1.5

2

2.5

250 300 350 400 450

UV Cure Temp (C)

Hardness - H (GPa)


SLX28D : High Aspect Ratio Gap Fill

• Complete and defect free fill of a highly recessed 500nm wide space through a 10nm wide opening.• The SLX28D within the recessed feature and narrow slot is completely resistant to 25:1 DHF. 25:1 DHF test used for two reasons: a) test wet etch resistance of SLX28D within narrow high aspect ratio features, b) to delineate SLX28D fill from PECVD SiO2 and Al layers.

Topography formed by Al-line and cusped CVD SiO2 is used to simulate that found in advanced pre-metal dielectric (PMD) applications.

450 ºC furnace cure for 1hr, SEM cross-section, 25:1 DHF wet etch for 60s

PECVD SiO2

SLX28D

SLX28D

Al

SLX28DSLX28D

PECVD SiO2


Silecs SLX24 ULK


SLX24 ULK : Organosiloxane Low-K Polymer

SLX24 ULK polymer designed for:

- Low k applications (k can be adjusted from 2.8 to 2.0; data within for k=2.5 film)

- Low RI applications

- Low % porosity for targeted k value

- Small pore diameter

- Short pore interconnection length

- High mechanical properties at targeted k

- Sensitivity to UV curing

- Stability (no water absorption)

1. Measured using MIS structure and Hg-probe. 2. Modulus & hardness based on Nanoindentation of >600nm

thickness films.3. Pore Volume (%) estimation based on RI, EP and PALS data

for k=2.5 film4. 24-hour water immersion5. Measured at 0.5MV/cm and 23 ºC6. Cure = 300 ºC, 1hr + 525 ºC, 1hr

Dielectric constant (MIS)(1,6)

2.53

Leakage current density (nA/cm2)(1,5) <0.1

Breakdown field (MV/cm)(1) >5

Modulus (GPa) (2,6) 6.2

Hardness (GPa)(2,6)

0.65

Crack threshold (single coat) (nm) ~1000

CTE (ppm/°C) <20

Decomposition T (cured film) (°C) >500

Pore radius (nm) 0.70

Pore volume (%) (3) ~22

Water absorption (∆k)(1,4)

<0.1

SLX24 ULK Film Properties


SLX24 ULK : Properties vs. Cure Method

SLX24 ULKFurnace Cure

450 ºC; 1 hr

Furnace Cure

300 ºC; 1hr + 525 ºC; 1hr

UV Cure @

400 ºC; 5min

(initial results) films baked to 150 ºC

prior to UV cure

Electrical

(k-value)2.56 2.53 2.58

Mechanical

(E / H GPa)4.0 / 0.47 6.3 / 0.65 6.8 / 0.93

Porosity (%) 20 22 18


SLX24 ULK : Film Properties vs. % Pore Monomer

All samples furnace cured at 450 ºC for 1 hr

Normalized Conc. (%) % Monomer component included in final polymeric structure for pore generation

01 02 03 04 0

0 1 02 03 0N o rma liz e d C o n c . (%)%P o ro s ity 024

68

0 1 02 03 0No rma liz e d Co n c . (%)E ' - Mo d u lu s (GP a )

1 .2 51 .3 01 .3 51 .4 01 .4 5

0 1 02 03 0No rma liz e d Co n c . (%)Re fra c tiv e In d e x2 .0 02 .2 02 .4 02 .6 02 .8 03 .0 0

0 51 01 52 02 53 0N o rma liz e d C o n c . (%)D ie le c tric C o n s ta n t

0

10

20

30

40

0 10 20 30

Normalized Conc. (%)

%Porosity

0

2

4

6

8

0 10 20 30


E' - Modulus (GPa)

1.25

1.30

1.35

1.40

1.45

0 10 20 30


Refractive Index

2.00

2.20

2.40

2.60

2.80

3.00

0 5 10 15 20 25 30


Dielectric Constant


SLX24 ULK : Pore Diameter & Interconnect Length

0.0 0.5 1.0 1.5 2.0 2.50.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

0.22

0.24

0.26Spherical Pore Model

22.155 P5-273

Cylindrical Pore Model 22.155 P5-273

(1/V)*(dV/dD)

Pore Mean Free Path (nm)

Normalized Conc. (%) % Monomer component included in final polymeric structure for pore generation

0

20

40

60

80

0 10 20 30


Interconnection Length (nm)

Pore diameter


SLX24 ULK : Film Properties vs. Cure Temperature

Std furnace cure 1 hour at given temp

Alt furnace cure 1 hour 300 ºC hold + 1 hour at given temp with

2.45

2.50

2.55

2.60

2.65

2.70

2.75

400 450 500 550


Dielectric Constant

Std FurnaceRecipe

Alt FurnaceRecipe

0

5

10

15

20

25

30

400 425 450 475 500 525 550


Porosity %

Std FurnaceRecipe

Alt FurnaceRecipe

0.001.002.003.004.005.006.007.00

400 450 500 550


Modulus - E (GPa)

Std FurnaceRecipe

Alt FurnaceRecipe

1.30

1.32

1.34

1.36

1.38

1.40

400 425 450 475 500 525 550


Post Cure RI

Std FurnaceRecipe

Alt FurnaceRecipe


Silecs SG200


SG200 : Methylsiloxane Polymer

SG200 polymer designed for:

- Partial and total etchback planarization processes

- Sub-Al IMD layer, BPSG leveling

- Defect free fill of features as narrow as 200nm in width

- Low cost

- K ~ 4

- Adhesion to underlying and capping dielectric layers

- Robust to material aging (good shelf life resilience)

- SG300 available (~320nm @ 3000 rpm)

Dielectric constant(1,3)

4.05

Leakage current density (nA/cm2)(1,2) ~1.8



- ( )Crack threshold single coat nm ~600

( /° )CTE ppm C <20

Water contact angle(3) 75

% ( )Film shrinkage bake to cure(3) 6%

( )Film stress MPa(4) 140

200 SG Film Properties

1. Measured using MIS structure and Hg-probe. 2. Measured at 0.5MV/cm and 23 ºC3. Cure = 425 ºC for 1 hr4. Double coated film (thickness ~ 450nm)


SG200 : Planarization – Double Coat

Planarization : Double Coat (Cured Film Thickness = 500 nm)

Local planarization as a function of cure temperature

40

455055

606570

758085

250 300 350 400 450 500 550


DOP (%)

SG200 : 1.0 umspacing

SG200 : 1.2umspacing



100nm CVD SiO2 Liner

SG 200 Spin-on Glass

900nm High Molybdenum Lines (varying line and space width)

• Defect free fill of 900nm high line structures• Cure temperature within range studied has minimal impact on feature planarization


SG200 : Planarization – Single Coat

Planarization : Single Coat (Cured Film Thickness = 250 nm)

• Void Free Fill Observed for Line Feature Aspect Ratios > 2

line spacing: 370 nm line spacing: 290 nm

Test Structure: 650nm High CVD TEOS SiO2 Line Slot Structures

• The 900nm high 1:0.75 pitch metal line feature is ~50% planarized by a 250nm thick film of SG200• No film remains on top of the metal line feature


SG200 : Film Properties vs. Cure Temperature

All samples furnace cured in N2 for 1 hr with a 200 ºC ramp to/from target cure temperature

• The refractive index and leakage current data indicate that the optimum cure temperature is > 400 °C

Leakage current density @ 0.5MV/cm applied field vs. cure temperature

0

1

2

3

4

5

6

300 350 400 450 500


Leakage (nA/cm2)

Dielectric constant vs. cure temperature

3.6

3.8

4

4.2

4.4

4.6

4.8

5

5.2

5.4

250 300 350 400 450 500 550


k

RI vs. cure temperature

1.400

1.405

1.410

1.415

1.420

1.425

250 300 350 400 450 500 550


RI @ 633nm


SG200 : Planarization vs. Material Aging

• No change in the planarization capability of the SG200 film noted as a result of both aging tests• Minimal to no change in other masurable film properties (thickness, refractive index, dielectric constant) noted as a result of material aging

Samples aged to 9 days at 40 ºC and 41 days at 22 ºC

Local planarization; pitch 2.0 µm

20

30

40

50

60

70

80

90

Reference 9 days at RT 9 days at 40 C 41 days at RT

DOP (%)

1.5 um spacing

1.8um spacing

1.1 um spacing

Regional planarization; 20 µm and 40 µm spacings

25

26

27

28

29

30

31

32

33

34

35

Reference 9 days at RT 9 days at 40 C 41 days at RT

DOP (%)

20 um spacing

40um spacing

Non-Aged Sample

Sample aged at 22 °C for 41 days


Silecs P1DX (Experimental Product)


P1DX : Low Temperature Cure Siloxane

P1DX Siloxane polymer design goals:

- Fully cured at temperature of ~ 200 ºC

- Excellent adhesion to a variety of substrates (SiO2, polyimides, acrylates, … )

- Ability to control coat polymer properties to permit conformal to non-conformal coating

- Stable, passivation film, excellent moisture barrier

- For application of interest, RI required to be between 1.4 and 1.6 in the visible range

P1DX is still under development for applications in the CMOS Sensor technology, other optics applications, MEMS, areas where low temperature cure are required.


P1DX : Summary of Results to Date (polymer A)

• Optical properties:

– Index of refraction = 1.45 @ 632.8nm

– Extinction co-efficient = 0 @ 632.8nm

• Polymer is fully cross-linked after a 150 oC (5min) or 150 oC (5min) + 200 oC (60min) cure; N2 ambient

• Polymer contains some residual silanol groups after both tested cure procedures

– Bake conditions need to be optimized

• Scored Scotch tape adhesion test to silicon and SiO2:

– 150 oC => poor

– 150 oC + 200 oC => good

• Chemically and optically stable against hot water soak test (sample immersion in a 75 ºC water bath for 5 min)


P1DX : Summary of Results to Date (polymer B)

• Optical properties:

– Index of refraction = 1.41 @ 632.8nm

– Extinction coefficient = 0 @ 632.8nm

• Polymer is fully cross-linked after a 150 oC (5min) or 150 oC (5min) + 200 oC (60min) cure; N2 ambient

• Polymer contains minor residual silanols after 150 oC cure, but is completely silanol free after the 150 oC + 200 oC cure

– Minor cure condition optimization needed

• Scored Scotch tape adhesion test to silicon and SiO2:

– 150 oC => poor

– 150 oC + 200 oC => good

• Chemically and optically stable against hot water soak test (sample immersion in a 75 ºC water bath for 5 min)

SILECS CONFIDENTIAL June 2005 Silecs Product Presentation June 2005.

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Transcript of SILECS CONFIDENTIAL June 2005 Silecs Product Presentation June 2005.