SiC POWER MODULES - Mitsubishi...
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SiC POWER MODULES
Transcript of SiC POWER MODULES - Mitsubishi...
www.MitsubishiElectric.com
HG-802C FU-1604 Printed in Japan <IP>
SiC POWER MODULES
Please visit our website for further details.
Revised publication, e�ective Apr. 2016.Superseding publication of HG-802C May 2015.
Speci�cations subject to change without notice.
2016
SiC POWER MODULES
21
Merits of IncorporatingSiC Power Modules
Traction• Size and weight of traction inverters reduced• Regenerative performance enhanced• Noise reduced
Home appliances• Energy savings increased• Cooling system more compact• Equipment more compact/thinner
Electric/Hybrid vehicles• Power loss reduced• Cooling system more compact• Regenerative power used efficiently
Renewable energies• Energy conversion efficiency improved• Passive components downsized• Quieter high-speed operation
Industrial equipment• High torque, high speed, size reduced• Cooling system more compact• Manufacturing productivity enhanced
Building facilities• Power loss reduced• Greater layout freedom as the result of smaller equipment
Innovative Power Devicesfor a Sustainable FutureTraction, industrial equipment, building facilities, electric vehicles, renewable energies, home appliances... Power devices are a key component in power electronics products for contributing to the realization of a low-carbon society. Attracting attention as the most energy-efficient power device is one made using new material, silicon-carbide (SiC). The material characteristics of SiC have led to a dramatic reduction in power loss and significant energy savings for power electronics devices. Mitsubishi Electric began the development of elemental SiC technologies in the early 1990s and has since introduced them to achieve practical energy-saving effects for products manufactured using SiC. Innovative SiC power modules are contributing to the realization of a low-carbon society and more affluent lifestyles.
SiC: Silicon Carbide-Compound that fuses silicon and carbon at a ratio of one-to-one.
SiC with superior characteristics
SiC has approximately 10 times the critical breakdown strength of silicon. Furthermore, the drift layer that is a main cause of electrical resistance is one-tenth of the thickness. This allows a large reduction in electrical resistance and, in turn, reduces power loss. This SiC characteristic enables dramatic reductions in conductivity loss and switching loss in power devices.
Power loss reducedWhen the temperature increases, electrons are exited to the conduction band and the leakage current increases. At times, this results in abnormal operation. However, SiC has three times the band gap width of silicon, preventing the flow of leakage current and enabling operation at high temperatures.
High-temperature operation
With SiC, owing to the high dielectric breakdown, power loss is reduced and high-voltage is easier to achieve, it is possible to use Schottky Barrier Diodes (SBDs), which cannot be used with Si. SBDs can realize high-speed switching motion because they don't have accumulation carriers. As a result, high-speed switching can be realized.
High-speed switching operationSiC has three times the heat conductivity of silicon, which improves heat dissipation.
Heat dissipation
SiC power modules appropriated by application
PMH200CS1D060PMH75CL1A120PMF75CL1A120PMF75B4L1A060FMF400BX-24AFMF800DX-24ACMH100DY-24NFHCMH150DY-24NFHCMH200DU-24NFHCMH300DU-24NFHCMH400DU-24NFHCMH600DU-24NFHPSH50YA2A6CMH1200DC-34SPSF15S92F6PSH20L91A6-APSF20L91A6-A
Full SiC-IPM
Hybrid SiC-IPM
Hybrid SiC Power Modules for High-frequency Switching Applications
Large Hybrid SiC DIPIPMTM for PV ApplicationHybrid SiC Power ModulesSuper-mini Full SiC DIPIPMTM
Super-mini Hybrid SiC DIPPFCTM
Super-mini Full SiC DIPPFCTM
200Current[A]
Rating
P3
P4
P5
P6
P7
Insert pagesProduct name ModelApplication
Industrialequipment
Traction
Homeappliances
Connection StatesVoltages[V]
Full SiC Power Modules
Full SiC-IPM for PV Applications
75
75400800
600
1200
1200
60012001200
6001700600
600
6 in 1
2 in 1
6 in 1
4 in 14 in 12 in 1
4 in 12 in 16 in 1
Interleaved
10015020030040060050
120015
20Arms
Commercially availableSample availableSample availableSample availableCommercially availableCommercially available
Commercially available
Commercially availableCommercially availableCommercially availableCommercially availableCommercially available
SiCIPMDIPIPMDIPPFCSBDMOSFETIGBTTr
Silicon CarbideIntelligent Power ModuleDual-In-Line Package Intelligent Power ModuleDual-In-Line Package Power Factor CorrectionSchottky Barrier DiodeMetal Oxide Semiconductor Field Effect TransistorInsulated Gate Bipolar TransistorTransistor
FWD-SWFWD-DCTr-SWTr-DCIGBT-SWIGBT-DCPVCSTBT
Diode switching lossDiode DC lossTransistor switching lossTransistor DC lossIGBT switching lossIGBT DC lossPhotovoltaicsMitsubishi Electric’s unique IGBT that makesuse of the carrier cumulative effect
Terminology
Si SiC
Thermalconductivity
rate is approx. 3 times
that of Si
Conduction band
Band gap Band gap is approx.3 times that of Si
Valence band
SiC High temperature
Hybrid SiC power modules
SiC
Si
Ic:500A/div
Turn-on switching waveform
Vce:250V/div
t:1μs/div
High-speedswitching operation realized
Large reduction inelectrical resistance
Si
Drain electrodeSi substrate
n-n+
Source SourceGate
n+p p
Si MOSFET structure
SiC
Drain electrode
SiC MOSFET structure
Current flow
n-n+Source Source
Gate
n+p p
SiC substrate
101
21
Merits of IncorporatingSiC Power Modules
Traction• Size and weight of traction inverters reduced• Regenerative performance enhanced• Noise reduced
Home appliances• Energy savings increased• Cooling system more compact• Equipment more compact/thinner
Electric/Hybrid vehicles• Power loss reduced• Cooling system more compact• Regenerative power used efficiently
Renewable energies• Energy conversion efficiency improved• Passive components downsized• Quieter high-speed operation
Industrial equipment• High torque, high speed, size reduced• Cooling system more compact• Manufacturing productivity enhanced
Building facilities• Power loss reduced• Greater layout freedom as the result of smaller equipment
Innovative Power Devicesfor a Sustainable FutureTraction, industrial equipment, building facilities, electric vehicles, renewable energies, home appliances... Power devices are a key component in power electronics products for contributing to the realization of a low-carbon society. Attracting attention as the most energy-efficient power device is one made using new material, silicon-carbide (SiC). The material characteristics of SiC have led to a dramatic reduction in power loss and significant energy savings for power electronics devices. Mitsubishi Electric began the development of elemental SiC technologies in the early 1990s and has since introduced them to achieve practical energy-saving effects for products manufactured using SiC. Innovative SiC power modules are contributing to the realization of a low-carbon society and more affluent lifestyles.
SiC: Silicon Carbide-Compound that fuses silicon and carbon at a ratio of one-to-one.
SiC with superior characteristics
SiC has approximately 10 times the critical breakdown strength of silicon. Furthermore, the drift layer that is a main cause of electrical resistance is one-tenth of the thickness. This allows a large reduction in electrical resistance and, in turn, reduces power loss. This SiC characteristic enables dramatic reductions in conductivity loss and switching loss in power devices.
Power loss reducedWhen the temperature increases, electrons are exited to the conduction band and the leakage current increases. At times, this results in abnormal operation. However, SiC has three times the band gap width of silicon, preventing the flow of leakage current and enabling operation at high temperatures.
High-temperature operation
With SiC, owing to the high dielectric breakdown, power loss is reduced and high-voltage is easier to achieve, it is possible to use Schottky Barrier Diodes (SBDs), which cannot be used with Si. SBDs can realize high-speed switching motion because they don't have accumulation carriers. As a result, high-speed switching can be realized.
High-speed switching operationSiC has three times the heat conductivity of silicon, which improves heat dissipation.
Heat dissipation
SiC power modules appropriated by application
PMH200CS1D060PMH75CL1A120PMF75CL1A120PMF75B4L1A060FMF400BX-24AFMF800DX-24ACMH100DY-24NFHCMH150DY-24NFHCMH200DU-24NFHCMH300DU-24NFHCMH400DU-24NFHCMH600DU-24NFHPSH50YA2A6CMH1200DC-34SPSF15S92F6PSH20L91A6-APSF20L91A6-A
Full SiC-IPM
Hybrid SiC-IPM
Hybrid SiC Power Modules for High-frequency Switching Applications
Large Hybrid SiC DIPIPMTM for PV ApplicationHybrid SiC Power ModulesSuper-mini Full SiC DIPIPMTM
Super-mini Hybrid SiC DIPPFCTM
Super-mini Full SiC DIPPFCTM
200Current[A]
Rating
P3
P4
P5
P6
P7
Insert pagesProduct name ModelApplication
Industrialequipment
Traction
Homeappliances
Connection StatesVoltages[V]
Full SiC Power Modules
Full SiC-IPM for PV Applications
75
75400800
600
1200
1200
60012001200
6001700600
600
6 in 1
2 in 1
6 in 1
4 in 14 in 12 in 1
4 in 12 in 16 in 1
Interleaved
10015020030040060050
120015
20Arms
Commercially availableSample availableSample availableSample availableCommercially availableCommercially available
Commercially available
Commercially availableCommercially availableCommercially availableCommercially availableCommercially available
SiCIPMDIPIPMDIPPFCSBDMOSFETIGBTTr
Silicon CarbideIntelligent Power ModuleDual-In-Line Package Intelligent Power ModuleDual-In-Line Package Power Factor CorrectionSchottky Barrier DiodeMetal Oxide Semiconductor Field Effect TransistorInsulated Gate Bipolar TransistorTransistor
FWD-SWFWD-DCTr-SWTr-DCIGBT-SWIGBT-DCPVCSTBT
Diode switching lossDiode DC lossTransistor switching lossTransistor DC lossIGBT switching lossIGBT DC lossPhotovoltaicsMitsubishi Electric’s unique IGBT that makesuse of the carrier cumulative effect
Terminology
Si SiC
Thermalconductivity
rate is approx. 3 times
that of Si
Conduction band
Band gap Band gap is approx.3 times that of Si
Valence band
SiC High temperature
Hybrid SiC power modules
SiC
Si
Ic:500A/div
Turn-on switching waveform
Vce:250V/div
t:1μs/div
High-speedswitching operation realized
Large reduction inelectrical resistance
Si
Drain electrodeSi substrate
n-n+
Source SourceGate
n+p p
Si MOSFET structure
SiC
Drain electrode
SiC MOSFET structure
Current flow
n-n+Source Source
Gate
n+p p
SiC substrate
101
3 4
600V/200A Hybrid SiC-IPM for Industrial EquipmentPMH200CS1D060 Commercially available
Contributes to reducing size/weight of industrial-use inverters with the mounting area reduced by approx. 60%
Features
＊Conventional product:Mitsubishi Electric CM400DY-24NF(1200V/400A 2in1) 2pcs
• Power loss reduced approx. 70% compared to the conventional product*• Low-inductance package adopted to deliver full SiC performance • Contributes to realizing smaller/lighter inverter equipment by significantly reducing
the package size and realizing a mounting area approx. 60% smaller compared to the conventional product*
Power loss comparison
Pow
er lo
ss [W
]
Condition:Vcc=600V, Io=222Arms (assuming a 110kW inverter), fc=15kHz, P.F=0.8, Modulation=1, Three-phase modulation, Tj=125˚C
IGBT module(Si) Full SiC module
Approx.70%
reduction
FWD_SWFWD_DC
Tr_SWTr_DC
Power loss comparison FWD_SWFWD_DC
Tr_SWTr_DC
1200V/800A Full SiC Power module
Industrial equipment 92.3 × 121.7mm1200V
Package size(D ×W)
Circuitconfigration
Retedcurrent
RatedvoltageApplications
400A
800A
4-in-1
2-in-1
Product lineup
Comparison with conventional product package
1200V/400A(4-in-1) 1pcsor1200V/800A(2-in-1) 1pcs
Full SiC power module
1200V/400A(2-in-1) 2pcsSi power module
Approx.60%
Footprint reduction
1200V/75A Hybrid/Full SiC-IPM for Industrial EquipmentPMH75CL1A120/PMF75CL1A120 Sample available
Features
Internal circuit diagram Power loss comparison
* Conventional product: Mitsubishi Electric S1 Series PM200SC1D060
SiC-SBD incorporated in an IPM with a built-in drive circuit and protection functionsPower loss reduction of approx. 20% contributes to enhancing the performance of industrial machinery
Pow
er lo
ss [W
]
FWD_SWFWD_DC
IGBT_SWIGBT_DC
Condition:Vcc=300V, Io=85Arms, fc=15kHz, VD=15V,P.F=1, Modulation=1, Three-phase modulation, Tj=125˚C
Si-IPM Hybrid SiC-IPM
Approx.20%
reduction
• Hybrid combination of SiC-SBD and IGBT with current and temperature sensors implemented for IPM supplies high functionality and low loss enabling high torque and motor speed
• Recovery loss (Err) reduced by 95% compared to the conventional product* • Package compatible with the conventional product* making replacement possible
Features• Incorporates SiC-MOSFET with current sensor, built-in
drive circuit and protection functions to deliver higher functionality
• Power loss reduced approx. 50% compared to conventional product*
• Improved power conversion efficiency and high-frequency drive enable reactor size to be reduced
• Package compatible with conventional product*
: SiC-SBD
P
N
U V W
600V/75A Full SiC-IPM for PV ApplicationsPMF75B4L1A060
Improved power conversion efficiency and high-frequency drive enable reactor size to be reduced
Drain
Sense Source
Gate
SiC-MOSFETwith current sense terminal
N
P
U V
Pow
er lo
ss [W
]
Conditions : Vcc=300V, fc=20kHz, Io=27.5Arms, P.F=1, Modulation=1, Tj=125℃Si-IPM Full SiC-IPM
Features Main specifications
Internal circuit diagram Power loss comparison
Built-in drive circuit and protection functions realize high functionality
1200V/75A 6in1Rating
Mounted Functions
• Built-in drive circuit• Under-voltage protection• Short-circuit protection• Over-temperature protection (Monitoring IGBT chip surface)
:SiC-SBD:SiC-MOSFET
Pow
er lo
ss [W
]
FWD_SWFWD_DC
Tr_SWTr_DC
Condition:Vcc=600V, Io=31Arms (assuming a 15kW inverter), fc=15kHz, P.F=0.9, Modulation=1, Three-phase modulation, Tj=125˚C
Si-IPM Hybrid SiC-IPM Full SiC-IPM
Approx.70%
reduction
Approx.25%
reduction
* Conventional product: Mitsubishi Electric IPM L1 Series PM75CL1A120
• Incorporates SiC-MOSFET with current sensor and built-in drive circuit and protection functions to deliver high functionality
• Significant reduction in power loss compared to the conventional product*
• Package compatible with the conventional product*
Drain
Sense Source
Gate
SiC-MOSFETwith current sense terminal
N
P
U V W
Full SiC-IPM
1200V/400A・1200V/800A Full SiC Power Modules for Industrial EquipmentFMF400BX-24A/FMF800DX-24A Commercially available
Sample available
* Conventional product: Mitsubishi Electric IPM PM75B4LA060
Main specifications600V/75A 4-in-1Rating
Functionsincorporated
• Built-in drive circuit• Under-voltage protection• Short-circuit protection
Internal circuit diagram :SiC-SBD:SiC-MOSFET
Approx.50%
reduction
3 4
600V/200A Hybrid SiC-IPM for Industrial EquipmentPMH200CS1D060 Commercially available
Contributes to reducing size/weight of industrial-use inverters with the mounting area reduced by approx. 60%
Features
＊Conventional product:Mitsubishi Electric CM400DY-24NF(1200V/400A 2in1) 2pcs
• Power loss reduced approx. 70% compared to the conventional product*• Low-inductance package adopted to deliver full SiC performance • Contributes to realizing smaller/lighter inverter equipment by significantly reducing
the package size and realizing a mounting area approx. 60% smaller compared to the conventional product*
Power loss comparison
Pow
er lo
ss [W
]
Condition:Vcc=600V, Io=222Arms (assuming a 110kW inverter), fc=15kHz, P.F=0.8, Modulation=1, Three-phase modulation, Tj=125˚C
IGBT module(Si) Full SiC module
Approx.70%
reduction
FWD_SWFWD_DC
Tr_SWTr_DC
Power loss comparison FWD_SWFWD_DC
Tr_SWTr_DC
1200V/800A Full SiC Power module
Industrial equipment 92.3 × 121.7mm1200V
Package size(D ×W)
Circuitconfigration
Retedcurrent
RatedvoltageApplications
400A
800A
4-in-1
2-in-1
Product lineup
Comparison with conventional product package
1200V/400A(4-in-1) 1pcsor1200V/800A(2-in-1) 1pcs
Full SiC power module
1200V/400A(2-in-1) 2pcsSi power module
Approx.60%
Footprint reduction
1200V/75A Hybrid/Full SiC-IPM for Industrial EquipmentPMH75CL1A120/PMF75CL1A120 Sample available
Features
Internal circuit diagram Power loss comparison
* Conventional product: Mitsubishi Electric S1 Series PM200SC1D060
SiC-SBD incorporated in an IPM with a built-in drive circuit and protection functionsPower loss reduction of approx. 20% contributes to enhancing the performance of industrial machinery
Pow
er lo
ss [W
]
FWD_SWFWD_DC
IGBT_SWIGBT_DC
Condition:Vcc=300V, Io=85Arms, fc=15kHz, VD=15V,P.F=1, Modulation=1, Three-phase modulation, Tj=125˚C
Si-IPM Hybrid SiC-IPM
Approx.20%
reduction
• Hybrid combination of SiC-SBD and IGBT with current and temperature sensors implemented for IPM supplies high functionality and low loss enabling high torque and motor speed
• Recovery loss (Err) reduced by 95% compared to the conventional product* • Package compatible with the conventional product* making replacement possible
Features• Incorporates SiC-MOSFET with current sensor, built-in
drive circuit and protection functions to deliver higher functionality
• Power loss reduced approx. 50% compared to conventional product*
• Improved power conversion efficiency and high-frequency drive enable reactor size to be reduced
• Package compatible with conventional product*
: SiC-SBD
P
N
U V W
600V/75A Full SiC-IPM for PV ApplicationsPMF75B4L1A060
Improved power conversion efficiency and high-frequency drive enable reactor size to be reduced
Drain
Sense Source
Gate
SiC-MOSFETwith current sense terminal
N
P
U V
Pow
er lo
ss [W
]
Conditions : Vcc=300V, fc=20kHz, Io=27.5Arms, P.F=1, Modulation=1, Tj=125℃Si-IPM Full SiC-IPM
Features Main specifications
Internal circuit diagram Power loss comparison
Built-in drive circuit and protection functions realize high functionality
1200V/75A 6in1Rating
Mounted Functions
• Built-in drive circuit• Under-voltage protection• Short-circuit protection• Over-temperature protection (Monitoring IGBT chip surface)
:SiC-SBD:SiC-MOSFET
Pow
er lo
ss [W
]
FWD_SWFWD_DC
Tr_SWTr_DC
Condition:Vcc=600V, Io=31Arms (assuming a 15kW inverter), fc=15kHz, P.F=0.9, Modulation=1, Three-phase modulation, Tj=125˚C
Si-IPM Hybrid SiC-IPM Full SiC-IPM
Approx.70%
reduction
Approx.25%
reduction
* Conventional product: Mitsubishi Electric IPM L1 Series PM75CL1A120
• Incorporates SiC-MOSFET with current sensor and built-in drive circuit and protection functions to deliver high functionality
• Significant reduction in power loss compared to the conventional product*
• Package compatible with the conventional product*
Drain
Sense Source
Gate
SiC-MOSFETwith current sense terminal
N
P
U V W
Full SiC-IPM
1200V/400A・1200V/800A Full SiC Power Modules for Industrial EquipmentFMF400BX-24A/FMF800DX-24A Commercially available
Sample available
* Conventional product: Mitsubishi Electric IPM PM75B4LA060
Main specifications600V/75A 4-in-1Rating
Functionsincorporated
• Built-in drive circuit• Under-voltage protection• Short-circuit protection
Internal circuit diagram :SiC-SBD:SiC-MOSFET
Approx.50%
reduction
5 6
4 2
3 1
(E1) (C2)
Si-IGBTSi-IGBT
C2
G2G1
E1
C1 E2
(C1) (E2)
Pow
er lo
ss [W
]
FWD_SWFWD_DC
IGBT_SWIGBT_DC
Condition:Vcc=850V, Io=600Arms, fc=1kHz, P.F=1, Modulation=1, Three-phase modulation, Tj=125˚C
CM1200DC-34N CMH1200DC-34S
Approx.30%
reduction
Internal circuit diagram Power loss comparison:SiC-SBD
150˚C4000Vrms
2.3V140mJ390mJ2.3V9.0μC
Max.operating temperatureIsolation voltage
Collector-emitter saturation voltage
Module
Si-IGBT@150˚C
SiC-SBD@150˚C
Emitter-collector voltageCapacitive charge
turn-onturn-off
Switching loss850V/1200V
High-power/low-loss/highly reliable modules appropriate for use in traction inverters
* Conventional product: Mitsubishi Electric Power Module CM1200DC-34N
• Power loss reduced approximately 30% compared to the conventional product*
• Highly reliable design appropriate for use in traction
• Package compatible with the conventional product*
Features Main specifications
Recovery waveform (FWD) Power loss comparisonFWD_SWFWD_DC
Tr_SWTr_DC
Contributes to extremely high power-efficiency in air conditioners, and easily applicable to industrial equipment
600V/15A Super-mini Full SiC DIPIPMTM
for Home AppliancesPSF15S92F6
Condition:Vcc=600V, Io=600Ap, fc=15kHz, P.F=0.8, Modulation=1, Three-phase modulation, Tj=125˚C
200ns/div
IE:100A/div
CMH600DU-24NFH(Hybrid SiC)
CM600DU-24NFH(Si-IGBT)
Pow
er L
oss
[W]
Condition：Vcc=300V, Io=25Arms, P.F=0.8, fc=10kHz, Tj=125℃
Si DIPIPMTM Hybrid SiC DIPIPMTM
Mod
ule
pow
er lo
ss [W
]
Si DIPIPMTM Full SiC DIPIPMTM
VVP1
VVPC
VN1VNWNFOVNC
CFO VSC
N
VW
PVWP1
VWPCWP
WNVCIN
LVIC
LVIC
VP
LVIC
Pow
er lo
ss [W
]
CM600DU-24NFH(Si-IGBT)
CMH600DU-24NFH(Hybrid SiC)
NEW
Approx.40%
reduction
External size( D x W )
Circuit configuration
Rated current
Rated voltageModelApplications
Industrialequipment
CMH100DY-24NFH
CMH150DY-24NFH
CMH200DU-24NFH
CMH300DU-24NFH
CMH400DU-24NFH
CMH600DU-24NFH
100A
150A
200A
300A
400A
600A
1200V 2-in-1
48 × 94mm
48 × 94mm
62 × 108mm
62 × 108mm
80 × 110mm
80 × 110mm
Features
For optimal operation of power electronics devices that conduct high-frequency switching
* Conventional product: Mitsubishi Electric NFH Series IGBT Modules
• Power loss reduction of approx. 40% contributes to higher efficiency, smaller size and weight reduction of total system
• Suppresses surge voltage by reducing internal inductance
• Package compatible with the conventional product*
Product lineup
Hybrid SiC Power Modules for High-frequency Switching Applications Commercially available
FWD_SWFWD_DC
IGBT_SWIGBT_DCPower loss comparison Power loss comparison
Features
*Conventional product:Mitsubishi Electric Large DIPIPMTM PS61A99
• Hybrid structure achieved with SiC Schottky barrier diode and 7th-generation IGBT chips• Power loss reduction of approx. 25% compared to the conventional product* • Helps downsize PV inverter system thanks to modified short-circuit protection scheme
Features
*Conventional product: Mitsubishi Electric Super-mini DIPIPM™ Series
• SiC-MOSFET achieves reduction in ON resistance, power loss reduced approx. 70% compared to conventional product*
• Construct low-noise system by reducing recovery current• Numerous built-in functions: Bootstrap diode for power supply to drive P-side, temperature
information output, etc.• Unnecessary minus-bias gate drive circuit using original high Vth SiC-MOSFET technology• As package and pin layout compatibility with conventional products* is ensured, simply replace
with this product to improve performance
More efficient power modules for PV power conditioner applications
600V/50A Large Hybrid SiC DIPIPMTM for PV ApplicationsPSH50YA2A6 Commercially available
Internal circuit diagram Internal block diagram:SiC-SBD
Approx.25%
reduction
1700V/1200A Hybrid SiC Power Modules for Traction InvertersCMH1200DC-34S Commercially available
Approx.70%
reduction
Di_SWDi_DC
Tr_SWTr_DC
Vcc=300V, VD=15V(Si),18V(SiC), fc=15kHz, P.F=0.95, Modulation=0.8, Io=1.5Arms, Tj=125℃
NW NV NU W
LVIC HVIC
V U P
5 6
4 2
3 1
(E1) (C2)
Si-IGBTSi-IGBT
C2
G2G1
E1
C1 E2
(C1) (E2)
Pow
er lo
ss [W
]
FWD_SWFWD_DC
IGBT_SWIGBT_DC
Condition:Vcc=850V, Io=600Arms, fc=1kHz, P.F=1, Modulation=1, Three-phase modulation, Tj=125˚C
CM1200DC-34N CMH1200DC-34S
Approx.30%
reduction
Internal circuit diagram Power loss comparison:SiC-SBD
150˚C4000Vrms
2.3V140mJ390mJ2.3V9.0μC
Max.operating temperatureIsolation voltage
Collector-emitter saturation voltage
Module
Si-IGBT@150˚C
SiC-SBD@150˚C
Emitter-collector voltageCapacitive charge
turn-onturn-off
Switching loss850V/1200V
High-power/low-loss/highly reliable modules appropriate for use in traction inverters
* Conventional product: Mitsubishi Electric Power Module CM1200DC-34N
• Power loss reduced approximately 30% compared to the conventional product*
• Highly reliable design appropriate for use in traction
• Package compatible with the conventional product*
Features Main specifications
Recovery waveform (FWD) Power loss comparisonFWD_SWFWD_DC
Tr_SWTr_DC
Contributes to extremely high power-efficiency in air conditioners, and easily applicable to industrial equipment
600V/15A Super-mini Full SiC DIPIPMTM
for Home AppliancesPSF15S92F6
Condition:Vcc=600V, Io=600Ap, fc=15kHz, P.F=0.8, Modulation=1, Three-phase modulation, Tj=125˚C
200ns/div
IE:100A/div
CMH600DU-24NFH(Hybrid SiC)
CM600DU-24NFH(Si-IGBT)
Pow
er L
oss
[W]
Condition：Vcc=300V, Io=25Arms, P.F=0.8, fc=10kHz, Tj=125℃
Si DIPIPMTM Hybrid SiC DIPIPMTM
Mod
ule
pow
er lo
ss [W
]
Si DIPIPMTM Full SiC DIPIPMTM
VVP1
VVPC
VN1VNWNFOVNC
CFO VSC
N
VW
PVWP1
VWPCWP
WNVCIN
LVIC
LVIC
VP
LVIC
Pow
er lo
ss [W
]
CM600DU-24NFH(Si-IGBT)
CMH600DU-24NFH(Hybrid SiC)
NEW
Approx.40%
reduction
External size( D x W )
Circuit configuration
Rated current
Rated voltageModelApplications
Industrialequipment
CMH100DY-24NFH
CMH150DY-24NFH
CMH200DU-24NFH
CMH300DU-24NFH
CMH400DU-24NFH
CMH600DU-24NFH
100A
150A
200A
300A
400A
600A
1200V 2-in-1
48 × 94mm
48 × 94mm
62 × 108mm
62 × 108mm
80 × 110mm
80 × 110mm
Features
For optimal operation of power electronics devices that conduct high-frequency switching
* Conventional product: Mitsubishi Electric NFH Series IGBT Modules
• Power loss reduction of approx. 40% contributes to higher efficiency, smaller size and weight reduction of total system
• Suppresses surge voltage by reducing internal inductance
• Package compatible with the conventional product*
Product lineup
Hybrid SiC Power Modules for High-frequency Switching Applications Commercially available
FWD_SWFWD_DC
IGBT_SWIGBT_DCPower loss comparison Power loss comparison
Features
*Conventional product:Mitsubishi Electric Large DIPIPMTM PS61A99
• Hybrid structure achieved with SiC Schottky barrier diode and 7th-generation IGBT chips• Power loss reduction of approx. 25% compared to the conventional product* • Helps downsize PV inverter system thanks to modified short-circuit protection scheme
Features
*Conventional product: Mitsubishi Electric Super-mini DIPIPM™ Series
• SiC-MOSFET achieves reduction in ON resistance, power loss reduced approx. 70% compared to conventional product*
• Construct low-noise system by reducing recovery current• Numerous built-in functions: Bootstrap diode for power supply to drive P-side, temperature
information output, etc.• Unnecessary minus-bias gate drive circuit using original high Vth SiC-MOSFET technology• As package and pin layout compatibility with conventional products* is ensured, simply replace
with this product to improve performance
More efficient power modules for PV power conditioner applications
600V/50A Large Hybrid SiC DIPIPMTM for PV ApplicationsPSH50YA2A6 Commercially available
Internal circuit diagram Internal block diagram:SiC-SBD
Approx.25%
reduction
1700V/1200A Hybrid SiC Power Modules for Traction InvertersCMH1200DC-34S Commercially available
Approx.70%
reduction
Di_SWDi_DC
Tr_SWTr_DC
Vcc=300V, VD=15V(Si),18V(SiC), fc=15kHz, P.F=0.95, Modulation=0.8, Io=1.5Arms, Tj=125℃
NW NV NU W
LVIC HVIC
V U P
SiC Power Module Lineup
7 8
Super-mini Hybrid / Full SiC DIPPFCTM for Home Appliances PSH20L91A6-A / PSF20L91A6-A
LVIC
VDP1P2
L1L2
N2
N1
Vin1Vin2
FoCFo
GNDCin1Cin2
Pow
er lo
ss [W
]
FWD_SWFWD_DC
Tr_SWoffTr_SWon
Tr_DC
Si DIPPFC™ Full SiC DIPPFC™Condition:Vin=240Vrms, Vout=370V, Ic=20Arms, fc=40kHz, Tj=125˚C
MCU LVIC
Si-IGBT
VD
Vin1
Vin2
Fo
CFo
GND
P1P2L1
L2
N2
N1
AC input
To inverter part
Hybrid SiC DIPPFC™High-frequency drive enables
reactor size to be reduced
Integration of PFC circuit and drive IC made it possible to reduce the mounting area and make components more compact such as simplifying the wiring pattern
No need to use spacer for adjusting height when attaching heat sink Merit 2Merit 1
Interleave PFC circuit in the case of discrete element configuration In the case of usingSiC DIPIPMTM and DIPPFCTM configuration
High adjustmentspacer
PFC control and protection circuit partsDi Tr Di Tr DIPIPMTM SiC DIPPFCTM DIPIPMTM
+
PFC circuit and drive IC integrated making it possible to reduce size including
smaller mounting area and simplified layout pattern
Approx.45%
reduction
Utilizing SiC enables high-frequency switching and contributes to reducing the size of peripheral components
Features• Incorporating SiC chip in the Super-mini package widely used in home appliances• The SiC chip allows high-frequency switching (up to 40kHz) and contributes to
downsizing the reactor, heat sink and other peripheral components • Adopts the same package as the Super mini DIPIPMTM to eliminate the need for a
spacer between the inverter and heat sink, and to facilitate its implementation
:SiC-SBD
:SiC-SBD
:SiC-MOSFET
Internal block diagram (Full SiC DIPPFCTM)
Interleaved PFC circuit configuration (for Hybrid SiC DIPPFCTM)
Merits of combined use of SiC DIPIPMTM and DIPPFCTM
Power loss comparison
600V/15A Super-mini Full SiC DIPIPM™PSF15S92F6-ASuper-mini Hybrid / Full SiC DIPPFC™ PSH20L91A6-A / PSF20L91A6-ALong
1700V/1200A Hybrid SiC Power Modulesfor Traction InvertersCMH1200DC-34S
600V/50A Large Hybrid SiC DIPIPMTM
for PV ApplicationsPSH50YA2A6
Hybrid SiC Power Modules for High-frequency Switching ApplicationsCMH 400DU-24NFHCMH 600DU-24NFH
Hybrid SiC Power Modules for High-frequency Switching ApplicationsCMH 200DU-24NFHCMH 300DU-24NFH
Hybrid SiC Power Modules for High-frequency Switching ApplicationsCMH100DY-24NFHCMH150DY-24NFH
1200V/400A，1200V/800A Full SiC Power Modules for Industrial UseFMF400BX-24AFMF800DX-24A
1200V/75A Hybrid/Full SiC-IPM for Industrial EquipmentPMH75CL1A120/PMF75CL1A120600V/75A Full SiC-IPM for PV ApplicationsPMF75B4L1A060
600V/200A Hybrid SiC-IPMfor Industrial UsePMH200CS1D060
Unit :mm
11.85±0.2
20±0
.1
4 2
3 1
130±0.557±0.25 57±0.25
140±
0.5
124±
0.25
30±0
.2
55.2±0.3
6-φ7 MOUNTING HOLES
4-M8 NUTS
6-M4 NUTS
53±0.2 57±0.240±0.2 44±0.2
5±0.
2
SCREWING DEPTHMIN. 16.5
SCREWING DEPTHMIN. 7.7
38+1 -0
18±0.216±0.2
38±0.520x1.778(-35.56)
35±0.3
14-0.5
18
18
25
1
0.28
14x2.54(-35.56)
12(2
.2)
2-R1.6 24
±0.5
(1)
1.778±0.2
4-C1.2
HEAT SINK SIDE
1
8-0.6
0.450.45
0.45 0.450.2
0.25
0.282.54±0.2
14±0
.5
5.5±
0.5
Lot No.Type name
3MIN
TAB#110,t=0.5
80±0.25
94
48 13
47.5
21.2
184
121212
2323 1717
2-φ6.5MOUNTING HOLES
3-M5 NUTS
7716 16 16
LABEL29+1
.0–0
.5
TAB#110,t=0.5
29+1 –0
.58.8
58.2
5
4
4-φ6.5 MOUNTING HOLES3-M6 NUTS
108
62
18 187 7 18
8.522
2.84
7.56
156
717
.5
14 14 14
25 2.521.525
Tc measured point7.57.5
LABEL
25.7
18
48±0
.25
93±0.25
3-M6 NUTS
4-φ6.5 MOUTINGHOLES
(8.5)
(22.
2)
9.25(
10)
(8.5)
(9)
(9)
93±0.25
62±0
.25
110
17.5
18.2
5
80
615
6
2514 14 14
25 21.5
LABEL29+1
.0–0
.5
21.2
8.5
18 18 187 7 TAB#110. t=0.5
5-M4 NUT
23.79 2-2.
54
2-2.
54
2-2.
54
5-2.5410.16 10.16
15
3
197
19 19 19
10.16
106 ±0.3
28 6.5
211
.61.
1
10
16.5
30
7
120
1 4
967.4
5.5750 398.
52.
525
1.65 7 10 15
31.2 42
.7
LABEL
2-φ 5.5MOUNTINGHOLES
2-R7
15- 0.64
SCREWINGDEPTH 7.5
106
19.753.25
7
16 15.25 2-φ 5.5
6-M5NUTS
MOUNTINGHOLES
6-23-23-23-2
10.75
712
(SCR
EWIN
G DE
PTH)
19- 0.5
32.75 23 23 23
1331
5511.
7532
13.5
17.5
17.5
19.75
1214
.5
1616
12011
1 5 9 13 19
12
13.6
4
(3)
(20.
5) 13
4.06 18.8 57.15
3.81
3.81
3.81
3.81
3.81
19.05 3.5
177
121.7
94.539
13.6
4
41.352244
7.75110±0.5
50±0
.5
57.56292.3
4-φ5.5 MOUNTING HOLES
3.75
6.5
(21.
14)
6-M6 NUTS
612222221.14
3918.4923.72
6.7239
(2.54×10)
1.8
8.6
0.8 22.7
168
10±0.3 10±0.3 10±0.3 10±0.3 10±0.3 10±0.3
70 ±0.379 ±0.5
2.54±0.3
31±0
.5
A = 2.54±0.3B = 5.08±0.3
B B B
12 53 4 6 87 9 1110 15 1716 20
303132
333440
294241
18 191412 13
B
B
B
A A A AA A
A 2.8
12.7
Type name , Lot No. 2-ø4.5±0.2
＊Tentative No.
Commercially available
SiC Power Module Lineup
7 8
Super-mini Hybrid / Full SiC DIPPFCTM for Home Appliances PSH20L91A6-A / PSF20L91A6-A
LVIC
VDP1P2
L1L2
N2
N1
Vin1Vin2
FoCFo
GNDCin1Cin2
Pow
er lo
ss [W
]
FWD_SWFWD_DC
Tr_SWoffTr_SWon
Tr_DC
Si DIPPFC™ Full SiC DIPPFC™Condition:Vin=240Vrms, Vout=370V, Ic=20Arms, fc=40kHz, Tj=125˚C
MCU LVIC
Si-IGBT
VD
Vin1
Vin2
Fo
CFo
GND
P1P2L1
L2
N2
N1
AC input
To inverter part
Hybrid SiC DIPPFC™High-frequency drive enables
reactor size to be reduced
Integration of PFC circuit and drive IC made it possible to reduce the mounting area and make components more compact such as simplifying the wiring pattern
No need to use spacer for adjusting height when attaching heat sink Merit 2Merit 1
Interleave PFC circuit in the case of discrete element configuration In the case of usingSiC DIPIPMTM and DIPPFCTM configuration
High adjustmentspacer
PFC control and protection circuit partsDi Tr Di Tr DIPIPMTM SiC DIPPFCTM DIPIPMTM
+
PFC circuit and drive IC integrated making it possible to reduce size including
smaller mounting area and simplified layout pattern
Approx.45%
reduction
Utilizing SiC enables high-frequency switching and contributes to reducing the size of peripheral components
Features• Incorporating SiC chip in the Super-mini package widely used in home appliances• The SiC chip allows high-frequency switching (up to 40kHz) and contributes to
downsizing the reactor, heat sink and other peripheral components • Adopts the same package as the Super mini DIPIPMTM to eliminate the need for a
spacer between the inverter and heat sink, and to facilitate its implementation
:SiC-SBD
:SiC-SBD
:SiC-MOSFET
Internal block diagram (Full SiC DIPPFCTM)
Interleaved PFC circuit configuration (for Hybrid SiC DIPPFCTM)
Merits of combined use of SiC DIPIPMTM and DIPPFCTM
Power loss comparison
600V/15A Super-mini Full SiC DIPIPM™PSF15S92F6-ASuper-mini Hybrid / Full SiC DIPPFC™ PSH20L91A6-A / PSF20L91A6-ALong
1700V/1200A Hybrid SiC Power Modulesfor Traction InvertersCMH1200DC-34S
600V/50A Large Hybrid SiC DIPIPMTM
for PV ApplicationsPSH50YA2A6
Hybrid SiC Power Modules for High-frequency Switching ApplicationsCMH 400DU-24NFHCMH 600DU-24NFH
Hybrid SiC Power Modules for High-frequency Switching ApplicationsCMH 200DU-24NFHCMH 300DU-24NFH
Hybrid SiC Power Modules for High-frequency Switching ApplicationsCMH100DY-24NFHCMH150DY-24NFH
1200V/400A，1200V/800A Full SiC Power Modules for Industrial UseFMF400BX-24AFMF800DX-24A
1200V/75A Hybrid/Full SiC-IPM for Industrial EquipmentPMH75CL1A120/PMF75CL1A120600V/75A Full SiC-IPM for PV ApplicationsPMF75B4L1A060
600V/200A Hybrid SiC-IPMfor Industrial UsePMH200CS1D060
Unit :mm
11.85±0.2
20±0
.1
4 2
3 1
130±0.557±0.25 57±0.25
140±
0.5
124±
0.25
30±0
.2
55.2±0.3
6-φ7 MOUNTING HOLES
4-M8 NUTS
6-M4 NUTS
53±0.2 57±0.240±0.2 44±0.2
5±0.
2
SCREWING DEPTHMIN. 16.5
SCREWING DEPTHMIN. 7.7
38+1 -0
18±0.216±0.2
38±0.520x1.778(-35.56)
35±0.3
14-0.5
18
18
25
1
0.28
14x2.54(-35.56)
12(2
.2)
2-R1.6 24
±0.5
(1)
1.778±0.2
4-C1.2
HEAT SINK SIDE
1
8-0.6
0.450.45
0.45 0.450.2
0.25
0.282.54±0.2
14±0
.5
5.5±
0.5
Lot No.Type name
3MIN
TAB#110,t=0.5
80±0.25
94
48 13
47.5
21.2
184
121212
2323 1717
2-φ6.5MOUNTING HOLES
3-M5 NUTS
7716 16 16
LABEL29+1
.0–0
.5
TAB#110,t=0.5
29+1 –0
.58.8
58.2
5
4
4-φ6.5 MOUNTING HOLES3-M6 NUTS
108
62
18 187 7 18
8.522
2.84
7.56
156
717
.5
14 14 14
25 2.521.525
Tc measured point7.57.5
LABEL
25.7
18
48±0
.25
93±0.25
3-M6 NUTS
4-φ6.5 MOUTINGHOLES
(8.5)
(22.
2)
9.25(
10)
(8.5)
(9)
(9)
93±0.25
62±0
.25
110
17.5
18.2
5
80
615
6
2514 14 14
25 21.5
LABEL29+1
.0–0
.5
21.2
8.5
18 18 187 7 TAB#110. t=0.5
5-M4 NUT
23.79 2-2.
54
2-2.
54
2-2.
54
5-2.5410.16 10.16
15
3
197
19 19 19
10.16
106 ±0.3
28 6.5
211
.61.
1
10
16.5
30
7
120
1 4
967.4
5.5750 398.
52.
525
1.65 7 10 15
31.2 42
.7
LABEL
2-φ 5.5MOUNTINGHOLES
2-R7
15- 0.64
SCREWINGDEPTH 7.5
106
19.753.25
7
16 15.25 2-φ 5.5
6-M5NUTS
MOUNTINGHOLES
6-23-23-23-2
10.75
712
(SCR
EWIN
G DE
PTH)
19- 0.5
32.75 23 23 23
1331
5511.
7532
13.5
17.5
17.5
19.75
1214
.5
1616
12011
1 5 9 13 19
12
13.6
4
(3)
(20.
5) 13
4.06 18.8 57.15
3.81
3.81
3.81
3.81
3.81
19.05 3.5
177
121.7
94.539
13.6
4
41.352244
7.75110±0.5
50±0
.5
57.56292.3
4-φ5.5 MOUNTING HOLES
3.75
6.5
(21.
14)
6-M6 NUTS
612222221.14
3918.4923.72
6.7239
(2.54×10)
1.8
8.6
0.8 22.7
168
10±0.3 10±0.3 10±0.3 10±0.3 10±0.3 10±0.3
70 ±0.379 ±0.5
2.54±0.3
31±0
.5
A = 2.54±0.3B = 5.08±0.3
B B B
12 53 4 6 87 9 1110 15 1716 20
303132
333440
294241
18 191412 13
B
B
B
A A A AA A
A 2.8
12.7
Type name , Lot No. 2-ø4.5±0.2
＊Tentative No.
Commercially available
109
Development of Mitsubishi Electric SiC Power Devices and Power Electronics Equipment Incorporating ThemMitsubishi Electric began developing SiC as a new material in the early 1990s. Pursuing special characteristics, we succeeded in developing various elemental technologies. In 2010, we commercialized the first air conditioner in the world equipped with a SiC power device.Furthermore, substantial energy-saving effects have been achieved for traction and FA machinery.We will continue to provide competitive SiC power modules with advanced development and achievements from now on.
Development of these modules and applications has been partially supported by Japan's Ministry of Economy, Trade and Industry (METI) and New Energy and Industrial Technology Development Organization (NEDO).
＊1 Researched in press releases by Mitsubishi Electric. ＊2 Currently under development, as of April 2016.* The year and month listed are based on press releases or information released during the product launch month in Japan.
Contributing to the realizationof a low-carbon society and more affluent lifestylesMay 2014
Began shipping samples of hybrid SiC power modules for high-frequency switching applications
2013
March 2013Delivered auxiliary power supply systems for railcars
February 2013Developed SiC for application in elevator control systems＊2
February 2013Developed technologies to increase capacities of SiC power modules＊2
December 2013Launched railcar traction inverter with full SiC power module
May 2013Launched SiC power modules
January 2010Developed large-capacity power module equipped with SiC diode
2010
October 2010Launched "Kirigamine" inverter air conditioner
January 2006Successfully developed SiC inverter for driving motor rated at 3.7kW
2006
Developed new material, silicon-carbide (SiC) power semiconductor, maintaining a lead over other companies
Early1990s
Developed various elementaltechnologies
2000s
November 2009Verified 20kW SiC inverter, world's highest value＊1 with approx. 90% reduction in power loss
2009February 2009Verified 11kW SiC inverter, world's highest value＊1 with approx. 70% reduction in power loss
October 2011Commercialized SiC inverter for use in railcars
2011January 2011Verified highest power conversion efficiency＊1 for solar power generation system power conditioner (domestic industry)
2014February 2014Developed EV motor drive system with built-in SiC inverter＊2
2012
December 2012Launched CNC drive unit equipped with SiC power module
March 2012Developed motor system with built-in SiC inverter＊2
September 2012Verified built-in main circuit system for railcars
July 2012Began shipping samples of hybrid SiC power modules
November 2014Launched Large Hybrid SiC DIPIPMTM
for PV Applications
2015January 2015Launched power conditioner for PV equipped with full SiC-IPM
June 2015Railcar traction system withfull SiC power modules installedin Shinkansen bullet trains
May 2016(Tentative)Launched package air conditioners with full SiC DIPIPMTM in Japan
2016April 2016Launched Super-mini Full SiC DIPIPM™
109
Development of Mitsubishi Electric SiC Power Devices and Power Electronics Equipment Incorporating ThemMitsubishi Electric began developing SiC as a new material in the early 1990s. Pursuing special characteristics, we succeeded in developing various elemental technologies. In 2010, we commercialized the first air conditioner in the world equipped with a SiC power device.Furthermore, substantial energy-saving effects have been achieved for traction and FA machinery.We will continue to provide competitive SiC power modules with advanced development and achievements from now on.
Development of these modules and applications has been partially supported by Japan's Ministry of Economy, Trade and Industry (METI) and New Energy and Industrial Technology Development Organization (NEDO).
＊1 Researched in press releases by Mitsubishi Electric. ＊2 Currently under development, as of April 2016.* The year and month listed are based on press releases or information released during the product launch month in Japan.
Contributing to the realizationof a low-carbon society and more affluent lifestylesMay 2014
Began shipping samples of hybrid SiC power modules for high-frequency switching applications
2013
March 2013Delivered auxiliary power supply systems for railcars
February 2013Developed SiC for application in elevator control systems＊2
February 2013Developed technologies to increase capacities of SiC power modules＊2
December 2013Launched railcar traction inverter with full SiC power module
May 2013Launched SiC power modules
January 2010Developed large-capacity power module equipped with SiC diode
2010
October 2010Launched "Kirigamine" inverter air conditioner
January 2006Successfully developed SiC inverter for driving motor rated at 3.7kW
2006
Developed new material, silicon-carbide (SiC) power semiconductor, maintaining a lead over other companies
Early1990s
Developed various elementaltechnologies
2000s
November 2009Verified 20kW SiC inverter, world's highest value＊1 with approx. 90% reduction in power loss
2009February 2009Verified 11kW SiC inverter, world's highest value＊1 with approx. 70% reduction in power loss
October 2011Commercialized SiC inverter for use in railcars
2011January 2011Verified highest power conversion efficiency＊1 for solar power generation system power conditioner (domestic industry)
2014February 2014Developed EV motor drive system with built-in SiC inverter＊2
2012
December 2012Launched CNC drive unit equipped with SiC power module
March 2012Developed motor system with built-in SiC inverter＊2
September 2012Verified built-in main circuit system for railcars
July 2012Began shipping samples of hybrid SiC power modules
November 2014Launched Large Hybrid SiC DIPIPMTM
for PV Applications
2015January 2015Launched power conditioner for PV equipped with full SiC-IPM
June 2015Railcar traction system withfull SiC power modules installedin Shinkansen bullet trains
May 2016(Tentative)Launched package air conditioners with full SiC DIPIPMTM in Japan
2016April 2016Launched Super-mini Full SiC DIPIPM™
Authorised Distributors for Mitsubishi Electric Power Semiconductors
Austria GLYN AUSTRIA Campus 21 / Businesspark Wien Süd Email: [email protected] Liebermannstr. A02/301, A-2345 Brunn am Gebirge www.glyn.at Phone +43 (0)1 890 3202 0 Fax +43 (0)1 890 3202 20 HY-LINE COMPONENTS Inselkammerstr. 10, D-82008 Unterhaching Email: [email protected] GMBH Phone +49 (0)89 61 45 03 10 www.hy-line.de Fax +49 (0)89 61 45 03 20 Baltic countries ELGERTA LTD The Elgerta Group Company Email: [email protected] (Lithuania, Visoriu st. 2, LT-08300 Vilnius, Lithuania www.elgertagroup.com Estonia, Latvia) Phone +370 5 265 2683, 265 2689 Fax +370 5 265 0828, 272 0008 Belarus SYMMETRON MINSK Kulman Str. 1, 220013, Minsk, Belarus Email: [email protected] Phone +375 (17) 209-8020 Fax +375 (17) 292-6372 Benelux GLYN GMBH & CO KG, Ringstr. 88, D-41334 Nettetal Email: [email protected] Benelux Division Phone +49 2157 124 231 www.glyn.com Fax +49 2157 124 232 Bulgaria OHM BG EOOD Svetlina Street No. 11, 8800 Sliven, Bulgaria Email: [email protected] Phone +359 4468 7533 www.ohm.com.tr Fax +359 4468 7533 Czech Republic STARMANS ELECTRONICS V Zahradach 24/836, CZ-18000 Praha 8 Email: [email protected] SRO Phone +420 (0) 2 8384 2063 www.starmans.net Fax +420 (0) 2 8384 1067 Denmark GLYN DENMARK Slotsmarken 18, DK-2970 Hørsholm Email: [email protected] Phone +45 702 016 33, www.glyn-nordic.dk Fax +45 702 016 37 France ARCEL ZI du Tronchon - 2, rue des Aulnes Email: [email protected] F-69544 Champagne Au Mont D’or Cedex www.arcel.fr Phone +33 (0) 478 35 0221 Fax +33 (0) 478 35 6954
COMPELEC MultiParc du Jubin, Bâtiment A 27, chemin des Peupliers Email: [email protected] 69 570 Dardilly, France Phone +33 (0) 472 088 080 Fax +33 (0) 472 088 215 Germany GLYN GMBH & CO KG Am Wörtzgarten 8, D-65510 Idstein/Ts. Email: [email protected] Phone +49 (0) 6126 590 388 www.glyn.de Fax +49 (0) 6126 590 188 HY-LINE COMPONENTS Inselkammerstr. 10, D-82008 Unterhaching Email: [email protected] GMBH Phone +49 (0) 89 61 45 03 10 www.hy-line.de Fax +49 (0) 89 61 45 03 20
INELTRON GMBH Hugenottenstr. 30, D-61381 Friedrichsdorf Email: [email protected] Phone +49 (0) 6172 49 98 23 0 www.ineltron.de Fax +49 (0) 6172 75 93 3
IS-POWER Edisonstrasse 16, D-85716 Unterschleißheim Email: [email protected] A Division of IS-LINE GmbH Phone +49 (0) 89 374 288 87-0 www.is-power.de Fax +49 (0) 89 374 288 87-99
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Israel RAM N.S TECHNOLOGIES LTD 1, Hamasger St., Raanana 43653, Israel Email: [email protected] Phone +972-(0)77-920 8111 www.ram-tech.co.il Fax +972-(0)77-920 8112
Italy ELETROMECCANICA ECC S.P.A Via Fratelli Rosselli, 33, Email: [email protected] I-20090 Trezzano sul Naviglio (MI) www.eccmec.it Phone +39 02 48 44 181 Fax +39 02 44 50 119
Italy MELCHIONI SPA Via P. Colletta 37, 20135 Milano (Italy) Email: [email protected] Phone +39 025794 738 www.melchioni.it Fax +39 025413 4095 Poland DACPOL Ul. Pulawska 34, PL-05500 Piaseczno Email: [email protected] Phone +48 22 7035 100 www.dacpol.com.pl Fax +48 22 7035 101 INELTRON POLAND Ul. Julianowska 34/10, PL-05500 Piaseczno Email: [email protected] Phone +48 6069 79897 Romania INELTRON ROMANIA Str. Lunetei 4, RO-400504 Cluj – Napoca Email: [email protected] Phone +40 735 986885 Russia DIAL-COMPONENT LTD Dmitrovskoe highway, Bld. 157, block 12. Email: [email protected] 127411, Moscow, Russia www.dialelectrolux.ru Phone +7 (495) 995 20 20 Fax +7 (495) 995 20 20 EFO LTD St. Petersburg, 194100, Email: [email protected] Novolitovskaya St. 15 lit. A, www.efo-power.ru Business-center Akvilon, office 441 Phone +7 (812) 327-8654 Fax +7 (812) 320-1819
PLATAN COMPONENTS 40-1, BlD. 2, Ivana Franko Str., Email: [email protected] RU-121351 Moscow www.platan.ru Phone +7 495 97 000 99 Fax +7 495 73 75 999
SYMMETRON ELECTRONIC Tallinskaya St. 7, RU-195196 St. Petersburg Email: [email protected] COMPONENTS Phone +7 (812) 449 40 00 www.symmetron.ru Fax +7 (812) 322 97 23 Spain and AICOX SOLUCIONES SA Avda. Somosierra, 12, 1°A, Email: [email protected] Portugal E-28703 San Sebastián de los Reyes www.aicox.com Phone +34 91 65 92 970 Fax +34 91 65 31 019 INELEC SA Bocangel, 38, E-28028 Madrid Email: [email protected] Phone +34 91 726 35 00 www.inelec.net Fax +34 91 726 33 34 Sweden GLYN SWEDEN Tammsväg 13, SE-81576 Söderfors Email: [email protected] Phone +46 (0) 293 300 84 www.glyn.se Fax +46 (0) 293 300 87 Switzerland ELEKTRON AG Riedhofstr. 11, CH-8804 Au (Zürich) Email: [email protected] Phone +41 (0) 44 781 01 11 www.elektron.ch Fax +41 (0) 44 781 06 04
Turkey OHM ELEKTRONIK VE Kemeralti Cad. Ada Han No. 87, 5 Tophane, Email: [email protected] TIRCARET A.S. TR-80030 Istanbul www.ohm.com.tr Phone +90 212 292 05 90 Fax +90 212 244 27 72 Ukraine DACPOL UKRAINE Snovskaya str. 20, 02090 Kiev, Ukraine Email: [email protected] Phone +380 44 501 93 44 www.dacpol.ua Fax +380 44 502 64 87 SYMMETRON UKRAINE Raskovoy M. Str. 13, 02660 Kiev, Ukraine Email: [email protected] Phone +38 0 (44) 239-2065 www.symmetron.ua Fax +38 0 (44) 239-2069
United Kingdom JOHN G. PECK LTD Unit B1 Wymeswold Industrial Park, Email: [email protected] Wymeswold Lane, Burton on the Wolds, www.jgpl.com Loughborough, Leics. LE12 5TY Phone +44 1509 88 10 10
www.MitsubishiElectric.com
HG-802C FU-1604 Printed in Japan <IP>
SiC POWER MODULES
Please visit our website for further details.
Revised publication, e�ective Apr. 2016.Superseding publication of HG-802C May 2015.
Speci�cations subject to change without notice.
2016
SiC POWER MODULES
www.mitsubishichips.eu
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