Semiconductor Lasers for Optical...
Transcript of Semiconductor Lasers for Optical...
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C. Coriasso – Nov 2012
Semiconductor Lasers
for Optical Communication
Claudio Coriasso Manager
Turin Technology Centre
MQW
10Gb/s DFB Laser
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Outline
1) Background and Motivation
• Communication Traffic Growth
• Why Photonics?
• Photonics evolution
2) Semiconductor Laser Basics
• Active material
• Optical Feedback
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Communication Growth
Tim Berners-Lee computer at CERN:
World’s first Web Server
1991
Worldwide communication traffic is doubling every 18 months (2dB/year)
Communication has always been one of the main driving force for the
development of new technologies:
Telegraph, Telephone, Fiber Optic, Laser, …
The Internet (34.3% world population)
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Traffic structure and Energy Consumption
• Data Centers and the Internet consume about 4% of electricity
(8.7 1011 kWhr/year including PCs)
• By 2018 the energy utilized by IP traffic will exceed 10% of the total electrical power
generation in developed countries (1)
• Most of the traffic is between machines and much of the information created today cannot
even be stored (2)
(1) L.Kimerling, MIT
(2) R.Tkatch, Alcatel Lucent
(3) D. Lee, Facebook European Conference on Optical Communication 2010
FACEBOOK (3) :
• 1.01 billion active users worldwide (23M in Italy, 39.5% population)
• 584 million active users every day
• 10.5 billion minute/day
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Why Photonics?
• Short monochromatic optical pulses are easily produced with semiconductor lasers (ps range Gb/s to Tb/s)
• Photons do not interact each other
• Photons can be propagated in optical fiber with very low loss (0.2dB/km)
• Several data streams at different wavelength can be combined, propagated together in optical fibers and then split (high channel capacity)
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Photonics in Optical Communication
Photonics
Electronics
Today Photonic Network:
Storage Area Network Local Area Network
Wide Area Network
Metro Area Network
10km 100km 100m 10m 1km 1000km
Traffic volume
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Photonics
Emission,
Transmission,
Processing (modulation, switching, amplification, …)
Detection
Photonics:
Science and technology of light
Began with Laser (1960) and Fiber Optic (1966) inventions.
These inventions formed the basis for the telecommunications revolution
of the late 20th century and provided the infrastructure for the internet.
1st Laser demonstration : T. Maiman 1960 1st Low-Loss Fiber Optic Proposal: C. Kao 1966
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Fiber Optics 1966: First proposal of fiber optic for telecom. Basic design [Kao STC, Nobel Prize 2009] 1970: Production of first fiber optic [Corning] 1976-77: First fiber optic networks 1988: First transoceanic fiber-optic cable (3148 miles, 40000 simultaeous telephone calls)
C. K. Kao receiving
his Nobel Prize
Stockholm 2009
First operative optical cable in urban areas
Torino 1976 First optical system carrying live traffic
over public network Chicago 1977
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Semiconductor Laser Basics
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Semiconductor LASER history 1962: First Realization of Semiconductor Laser (GaAs @T = - 200 oC) [GEC, IBM, MIT] 1963: Proposal of Heterostructure Semiconductor Laser (H. Kroemer, Z. Alferov: Nobel Prize 2000) 1970: First Realization of Heterostructure Semiconductor Laser (Z. Alferov) 1972: Proposal of Distributed Feedback Laser (DFB) 1970: Room Temperature CW operation of 1.5m Laser 1977: Proposal of Vertical Cavity Surface Emitting Laser (VCSEL) 1984: First Realization of Strained MQW in semiconductor laser 1988: First Realization of VCSEL 2000: First Uncooled Telecom Lasers
Z. Alferov receiving
his Nobel Prize
Stockholm 2000
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Grating
(optical feedback)
Quantum wells
(optical gain) Waveguide
(optical confinement)
Electrodes
(current injection)
Laser requirements for optical communication
DFB MQW Laser
• High bandwidth ( 10Gb/s)
• Single mode operation
• Low consumption
• Uncooled operation (up to 80oC)
25Gb/s
State of Art of uncooled high-speed lasers
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High-speed laser key factors
High carrier density and high photon density in an active material
within a small-volume optical resonator
1. Electrical confinement (p-n heterostructure)
2. Optical confinement (single-mode waveguide)
3. Gain (quantum-confined material)
4. Feedback (distributed Bragg grating)
1 2 3
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Laser rate equations:
0dt
d
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• Optical gain, light emission (direct band gap) ...
•... at wavelength of interest: = 1,3 m e 1,55 m
• compatibility with semiconductor substrates: Si, GaAs, InP
Semiconductor material basic requirements
for photonic devices
e
h
photon emission
through e-h
recombination
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III V
There are no single elements or binary compounds compatible with commercial substrates and emitting light at 1.3 m e 1.55 m. Semiconductor alloys of III-V elements are the best materials for photonic devices.
III-V semiconductor materials
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Quaternary alloy InGaAsP
T. P. Pearsall, , Wiley (1982)
In1-xGaxAsyP1-y alloy cover all the
spectral range required for optical
telecom
• High quality material
• Established
growth techniques
and material processing
• Suited for active devices (lasers,
amplifiers, modulators, ...) and
passive structures (waveguides,
couplers, ...)
In1-xGaxAsyP1-y
lattice matched to InP
(g=0.92 - 1.65m)
InGaAs
(g=1.65m)
InP (g=0.92m)
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Further alloy systems
1
1 In1-xGaxAsyP1-y on InP
2
Al1-x-yGaxInyAs on InP 2
3 Al1-xGaxAs on GaAs 3
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(Basic) Optical properties of semiconductors
lh hh
e
E
Eg
**
**9
elh
ehh
mm
mm
Three bands are involved in optical transitions:
- Electrons Conduction Band
- Heavy holes
- Light holes Valence Band
JDOS
Eg
a
gEJDOS
k
Joint density of states (available for optical
transitions) is a square root function of the
energy in excess of the energy gap
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Semiconductor Heterostructures
A
(Substrate)
A
B B
A
Double Heterostructure (DH)
n
p
e-h confinement
Eg(A)> Eg(B)
Combination of layers of different crystalline semiconductors.
H. Kroemer, Varian associates 1963
(Nobel Prize in Physics, 2000)
The idea was experimentally demonstrated using the Liquid Phase Epitaxy (LPE)
Separate Confinement
Heterostructure (SCH) ph > e
A
(Substrate)
A
B B
A
n
p
Photon confinement
C
C
Eg(A)> Eg(C) )> Eg(B) , n(A)< n(C) < n(B)
refractive index
Yphoton
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Quantum Wells
Quantum-Size Double Heterostructure (Quantum Well) is a planar waveguide for electrons
C. H. Henry, Bell Labs 1972
The idea was experimentally demonstrated in 1974 using the newly developed Molecular
Beam Epitaxy (MBE).
A
QUANTUM WELL
d = 3
z
y
x
d = 2 Lw ~ e
BULK
EgA Eg
B EgQW
1
2
2 1
B A B
Lw
QW is now a widely spread
quantum product
based in atomic-scale technology
B A B
Transmission Electron Microscope
view of QW
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)()()(222
0
2
2znzznk
dz
deff
neff
2
Yph(z)
n2(z)
Photon wave eqn. vs. Electron wave eqn.
Helmholtz equation (photon)
refractive index ridges confine photons (optical waveguides)
z Ye(z)
)()(2 zVzn
cladding barrier
core well
)()()(2 2
22
zEzzVdz
d
m
E
V(z)
Schroedinger equation (electron)
potential wells confine electrons (quantum wells)
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Eigenfunction/Eigenvalues Calculation
E0
E1 nTE0
nTE1
nTE0
nTE1
E0
E1 YTE0
YTE1
Y1
Y0
Optical Waveguide Quantum Well
)()(
)()(
Y
Y
YY
zz
zz
zz
TETE
TETE
)()(
1)(
)(
1
)()(
Y
Y
YY
zzzm
zzzm
zz
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Reduced dimensionality structures
A
QUANTUM WELL
d = 3 z
y
x
d = 2
Lz ~ e
BULK
PLANAR WAVEGUIDE
E.M.
A B
B
Q.M.
1975: R.Dingle and C.Henry
USA Patent Application
QUANTUM WIRE
d = 1
Lz ,Ly ~ e
A B
B
QUANTUM DOT
d = 0
Lz ,Ly ,Lx ~ e
CHANNEL WAVEGUIDE
OPTICAL RESONATOR A
B
B
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MQW heterostructures
Multi Quantum Wells are stacks of decoupled QWs
(with sufficiently thick barriers): enhancement of single QW effects
ENERGY
Z Y
X Z
WELLS
SUBSTRATE BARRIERS
VA
LE
NC
E B
AN
D
CO
ND
UC
TIO
N B
AN
D
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QW band structure
E
hh1
e1
e2
hh2
lh2
lh1
11 1’1
TE TM
22
z
2D JDOS related features:
• Sharp absorption edge (2D JDOS)
• High differential gain
• Wide gain bandwith
• High electroabsorption efficiency (QCSE)
• Strong optical nonlinearities
• . . .
JDOS
e1-h
h1
EgQW
Egbulk
e1-l
h1
e2-h
h2
One step for
every
allowed
transition
( ) ji
ji
jiEJDOS
2
bulk
gEE
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Excitons
e
h
e - h semi-bound states (t ~ 100 fs) which
produce sharp absorption peaks detuned from
the transition energies (absorption steps) by
their binding energy
Eb (~8 meV per InGaAsP)
E
a
h
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QW optical properties
Polarisation selection rules:
TE: 3/4 hh, 1/4 lh
TM: 0 hh, 1 lh
e1-h
h1
e1-l
h1
e1-h
h1
e1-l
h1
aTE
aTM
nTE
nTM
Strong dichroism
a
a
a
2
)()()(n̂
'
')'(1)()(
0
22
cin
dcnstateexcitonJDOS
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aL
aS
ma a
a
a lattice parameter of epitaxial layer
a lattice parameter of substrateL S
S
L
S
RST
Strain(1)
The epitaxial layer can be grown with a lattice parameter slightly different from the
substrate lattice parameter (lattice mismatch).
compressive strain m>0
tensile strain
aL
aS
m<0
, aL = lattice parameter of the epitaxial layer
aS = lattice parameter of the substrate
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T. P. Pearsall, , Wiley (1982)
InGaAs
InP
Strain(2)
InGaAs
InP
±1%
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hh1
e1
e2
lh1
11 1’1
k
E
lh hh
e
m=0
TM
TE
Strain effect on band structure:
lh1
k
E
lh hh
e
m>0
hh1
e1
e2
11 1’1
TM
TE
Low escape time
High T0 (low thermal dependence)
High-speed uncooled Lasers
compressive
strain
k
E
lh hh
e
m<0
hh1
e1
e2
lh1
11 1’1
TE, TM
Low dichroism
Polarization-independent devices
tensile
strain unstrained
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Optical gain in MQW
• high differential gain (dG/dN) step-like shape of density of states
• wider spectral bandwidth deep penetration of Fermi function
0 5 10 15 20 -15
-10
-5
0
5
10
Rel
. Am
plit
ud
e (d
B)
[GHz]
( )thdB IIdN
dG3
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Distributed Feedback
a+
a-
T
R
B
2.32
24.0
65 1
m
cm
aiikadz
da
ikaaidz
da
T
R
B
DF /4 a+
a-
T
R
B
( )
i
m
cm
4
1
104.32.32
24.0
65
Single- reflectivity:
Single mode laser
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ATOMS
SEMICONDUCTOR LASER
Quantum Wells:
Atomic-Controlled Artificial Structures
ACTIVE LAYER MQW
QUANTUM WELL
BARRIER
)()()(2 2
22
zEzzVdz
d
m
),,(),,( FNkiFNn
Control of Optical Properties through atomic-scale technology
Quantum Well requires sub-monolayer manufacturing control achievable with
Molecular Beam Epitaxy or Metal Organic Chemical Vapor Deposition.