Research and Trends in Power Electronics Components and ...
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Institute of Control and Industrial Electronics Warsaw University of Technology I S EP P W Research and Trends in Power Electronics Components and Converter Topologies Mietek Nowak December 2004
Transcript of Research and Trends in Power Electronics Components and ...
Institute of Control and Industrial Electronics Warsaw University of TechnologyI S EP
P W
Research and Trends in Power Electronics Components and
Converter Topologies
Mietek Nowak
December 2004
Contents (main items:)
1. Introduction
2. Semiconductor switches
3. Conservative/storage devices
4. Converter topologies
5. Future of converters technology
6. Final remarks
Institute of Control and Industrial Electronics Warsaw University of TechnologyI S EP
P W
December 2004
1.Introduction
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Modern power electronics celebrates its 50th birthday. This halfModern power electronics celebrates its 50th birthday. This half a a century of growth of electrical energy conversion and control uscentury of growth of electrical energy conversion and control using ing semiconductor has been contemporary to and also strongly relatedsemiconductor has been contemporary to and also strongly related to to some some civilicivilissationalational phenomena: phenomena:
••Spectre of energy crisis and ecological issues resulting in enerSpectre of energy crisis and ecological issues resulting in energygy--saving idea and development of renewable energy sources saving idea and development of renewable energy sources
••Rapid growth of loads supplied byRapid growth of loads supplied by converters (~10converters (~101010) caused largely ) caused largely by the development of IT and multimedia society by the development of IT and multimedia society
••Huge broadening of converter power range (0.01WHuge broadening of converter power range (0.01W--10000MW) 10000MW)
••Continuous development of semiconductor structures inContinuous development of semiconductor structures in nanonano--technologies driven by VLSI technologytechnologies driven by VLSI technology
December 2004
1.Introduction
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Basic relations determining converter developmentBasic relations determining converter development
December 2004
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2. Power semiconductor switches
5050--year growyear growth th of semiconductor power device „bushes” of semiconductor power device „bushes”
December 2004
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2. Power semiconductor switches
Main research concerns on group 1
and 3
Practical grouping of semiconductor devices:Practical grouping of semiconductor devices:
1. Low voltage / low power1. Low voltage / low power
2. Standard voltage/medium power2. Standard voltage/medium power
3. Medium 3. Medium & & high high voltage/high power voltage/high power
Evaluation criteria for devices Evaluation criteria for devices by by technology type and group:technology type and group:
FIGURE OF MERIT ( FOM) :FIGURE OF MERIT ( FOM) :
Typical examples: Typical examples:
(U(UFF xQxQrrrr) v. (technology) or (time) for diodes) v. (technology) or (time) for diodes
(U(UCE(on)CE(on)xExEss(on(on--off)off) xfxfSS)v. (technology) (time) for IGBT )v. (technology) (time) for IGBT
December 2004
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2. Power semiconductor switches
SiliconSilicon SchottkySchottky Diodes Diodes -- low voltage ( < 100V)low voltage ( < 100V)
UUFF<0,25V <0,25V
UUFF<0,5V <0,5V
Main goal: decrease of on state voltage Main goal: decrease of on state voltage
December 2004
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2. Power semiconductor switches High voltageHigh voltage PiNPiN -- PiNPiN--SchottkySchottky -- diodes( 10000V)diodes( 10000V)Basic material Basic material
exceptexcept SiSi::
GaAsGaAs
GaNGaN
SiC SiC
Last decade FOM for diodes
December 2004
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2. Power semiconductor switches Power MOSFETPower MOSFET Si Si // SiCSiC low voltage <100Vlow voltage <100V
Ron decrease from 2 mOhm cm2
to 0,05 mOhm cm2
December 2004
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2. Power semiconductor switches Workhorse of present day power electronics Workhorse of present day power electronics -- IGBTIGBT
Last decade FOM for IGBT’s
One from research issues:
Reverse Blocking IGBT
December 2004
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2. Power semiconductor switches ThyristorThyristor structures controlled by MOSstructures controlled by MOS
New DeNew De DonckerDoncker ( ISEA( ISEA--RWTH) researchRWTH) research--expected cheap solution based on bonding of low expected cheap solution based on bonding of low
voltage MOS with standard three layer SCR voltage MOS with standard three layer SCR waferwafer
ClasicalClasical MCT ( GEMCT ( GE--Harris) is still not Harris) is still not
competitive competitive in in relation relation to to IGBTIGBT
December 2004
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2. Power semiconductor switches Gate Turn Off Gate Turn Off TThyristorshyristors/ Gate Commutated/ Gate Commutated ThyristorsThyristors
GTO - technology decreasing on state voltage and turn-off energy
GCT - idea
main problem: low gate inductance
- integrated gate driver
December 2004
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2. Power semiconductor switches Medium ( high) voltage switches Medium ( high) voltage switches -- serial serial conconnnectionection of GTO/IGCT and IGBTof GTO/IGCT and IGBT
High voltage stacks with N+1 or N+2 devices : Necessary condition : presspackconstruction which guarantees short circuit after one switch failure
December 2004
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2. Power semiconductor switches SiC SiC devices devices -- high , medium or low promising high , medium or low promising technology?technology?
Basic materialBasic material Promising theoretic features Promising theoretic features
Real difficulties : obtainingReal difficulties : obtaininghomogehomogeneouneouss epitaxialepitaxial
growthgrowth Structures suitable for SIC technologyStructures suitable for SIC technology
December 2004
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2. Power semiconductor switches Power Integrated CircuitsPower Integrated Circuits -- PICPIC( ( smart power electronicsmart power electronic))
Technical problems associated with PIC developmentTechnical problems associated with PIC development::••Electrical isolation between high and low voltage Electrical isolation between high and low voltage devicesdevices••Integration of different devices including passive and Integration of different devices including passive and conservative componentsconservative components••More complex thermal design of PIC More complex thermal design of PIC
Development of PIC must Development of PIC must be be justified justified economically economically because of large upbecause of large up--front front
development costsdevelopment costs
December 2004
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3. Conservative/storage devices/ transformers
A. Magnetics•Continuous progress in magnetic materials:
•Decreasing of typical power loss density•Increasing of max. temperature •Increasing of max. flux density
•Improving of high frequency winding losses acording to proximity effect and eddy current •Integration / assembly and manufacturing technologies / integration with semiconductors.
B. CapacitorsBasic evaluation parameters : specific power kW/kg; specific energy kJ/kgType: polymer(5; 0,4) ceramic (10; 0,01)-, electrolytic(2; 0,2); electrochemical-super(10, 20)
December 2004
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4. Converter topologies Classification and grouping of
converters: Type of conversion:
AC/DC
DC/DC
DC/AC
AC/AC
Voltage/Power
Low( <100V)
Medium(100-10000V)
High( >10000V)
Technology :•Degree of integration•Switching frequency
•...•..•...
Applications:Drives//Computer//Multimedia//Grid systems// Power Quality
//Distributed Generation//Popular Appliances//Lighting//Industrial Technologies//Car-Electronics//...//...//?????
December 2004
Institute of Control and Industrial Electronics Warsaw University of TechnologyI S EP
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4. Converter topologies
Subjective review of converters (topologies?):
Selected examples which have been developed and researched in the last
decade. Some of them will stay within the field of creative interest in near
future.
Control of each converter presented is beyond discussion.
December 2004
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4. Converter topologies
AC/DC low & medium powerAC/DC low power
December 2004
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4. Converter topologies
AC/DC & DC/AC medium power
December 2004
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4. Converter topologies
AC/DC & DC/AC medium power
December 2004
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4. Converter topologies
AC/DC & DC/AC medium power
December 2004
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4. Converter topologies
AC/DC & DC/AC high power
December 2004
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4. Converter topologies
AC/DC & DC/AC
high power
December 2004
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4. Converter topologies
DC/AC high powerAC/DC & DC/AC Medium & high power
December 2004
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4. Converter topologies
DC/AC/DC low power
December 2004
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4. Converter topologies DC/AC/DC low -medium power
December 2004
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P W
4. Converter topologies
AC/AC -medium power
December 2004
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5. Future of converters technology
•Integration in low and medium power (mainly DC/DC)
Electromagnetic integrationPackagingSoft switching
• Detailed and „deep” thermal design
•Standardisation
•Integration of intelligent converters and converter systems with common power grid system
•Medium frequency interfaces and energy transmitters
December 2004
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6. Final remarksSi-Device technology is well developed and fulfils almost all needs with regard to power conversion. SiC and other semiconductor materials are still not mature and to expensive
A set of converters is very numerous and any item of these can be matched properly to concrete application.
Justifiable trend to increasing of converter switching frequencies force to design the „technological” converter as unified electromagnetic and thermal system
Modern power electronics integrate much more than before the semiconductor technology with converter topology and its protection and control , especially in low power and popular applications.
A new area of power electronics application - distributed generation of energy - will establish a family of converters with intelligent control,making possible the simple integration with Grid and Net.
December 2004
