Renesas Electronics America Inc. © 2010 Renesas Electronics Corporation. All rights reserved. ID...

57
Renesas Electronics America Inc. © 2010 Renesas Electronics Corporation. All rights reserved. ID 820C: Scalable Voltage Regulator(VR) Tetsuo “Ted” Sato Director, Business Development 13 October 2010 Version 1.0

Transcript of Renesas Electronics America Inc. © 2010 Renesas Electronics Corporation. All rights reserved. ID...

Renesas Electronics America Inc.

© 2010 Renesas Electronics Corporation. All rights reserved.

ID 820C: Scalable Voltage Regulator(VR)

Tetsuo “Ted” Sato

Director, Business Development

13 October 2010

Version 1.0

© 2010 Renesas Electronics Corporation. All rights reserved.

2

Tetsuo “Ted” Sato

Director Business Development Power Management Devices Standard Products

PREVIOUS EXPERIENCE: 20+ years Mixed Signal IC design and management in Hitachi 12 years Business Development in USA Member of IEEE Solid-State Circuit Member of Institute of Electronics Information & Communication

Engineers BSEE from Iwate University in Japan Received `2003 R&D 100 Awards `1998 IEEE IMS presented “Intelligent RF Power Module using

Automatic Bias Control system for PCS CDMA applications” 100+ Patents in USA and Japan

© 2010 Renesas Electronics Corporation. All rights reserved.

3

Renesas Technology and Solution Portfolio

Microcontrollers& Microprocessors

#1 Market shareworldwide *

Analog andPower Devices#1 Market share

in low-voltageMOSFET**

Solutionsfor

Innovation

Solutionsfor

InnovationASIC, ASSP& Memory

Advanced and proven technologies

* MCU: 31% revenue basis from Gartner "Semiconductor Applications Worldwide Annual Market Share: Database" 25 March 2010

** Power MOSFET: 17.1% on unit basis from Marketing Eye 2009 (17.1% on unit basis).

© 2010 Renesas Electronics Corporation. All rights reserved.

44

Renesas Technology and Solution Portfolio

Microcontrollers& Microprocessors

#1 Market shareworldwide *

Analog andPower Devices#1 Market share

in low-voltageMOSFET**

ASIC, ASSP& Memory

Advanced and proven technologies

* MCU: 31% revenue basis from Gartner "Semiconductor Applications Worldwide Annual Market Share: Database" 25 March 2010

** Power MOSFET: 17.1% on unit basis from Marketing Eye 2009 (17.1% on unit basis).

Solutionsfor

Innovation

Solutionsfor

Innovation

© 2010 Renesas Electronics Corporation. All rights reserved.

55

Renesas Power Management Devices and Solutions

Scalable Multi-SiP Solution

Compact and Integrated SiP

Performance Package

Value Package

Standard Package

IntegratedIntegrated Hybrid Analog/Digital VR control Fully scalable, 2 rails up to 6 phase, 180A total Super efficiency from 1% to 100% of full load CPU & GPU for Server, Workstation, and NBPC

Industry-Standard Package Low cost General Purpose for non-isolated DC-DC

Leadless, SO-8 footprint compatible Thin-Profile PackageAl Ribbon Bonding supported to lower package resistance and costPC/Server and Mobile Applications

For best efficiency in high current applications Up to 175°C and 180A Id Industrial, Automotive, Telecom, DC-DC Module

8x8 and 6x6 Package integrates PWM, Driver, HS+LS FET

Capable to 40A; peak efficiencies reach 94% Networking/Computing main board 12 or 19Vin to

0.6 to 3Vout

DiscreteDiscrete

© 2010 Renesas Electronics Corporation. All rights reserved.

66

Renesas Power Management Devices and Solutions

Scalable Multi-SiP Solution

Compact and Integrated SiP

Performance Package

Value Package

Standard Package

IntegratedIntegrated Hybrid Analog/Digital VR control Fully scalable, 2 rails up to 6 phase, 180A total Super efficiency from 1% to 100% of full load CPU & GPU for Server, Workstation, and NBPC

Industry-Standard Package Low cost General Purpose for non-isolated DC-DC

Leadless, SO-8 footprint compatible Thin-Profile PackageAl Ribbon Bonding supported to lower package resistance and costPC/Server and Mobile Applications

For best efficiency in high current applications Up to 175°C and 180A Id Industrial, Automotive, Telecom, DC-DC Module

8x8 and 6x6 Package integrates PWM, Driver, HS+LS FET

Capable to 40A; peak efficiencies reach 94% Networking/Computing main board 12 or 19Vin to

0.6 to 3Vout

DiscreteDiscrete

Scalable Multi-SiP Solution

Highly efficient, hybrid analog/digitally controlled, fully scalable VR solution

for high-current applications

© 2010 Renesas Electronics Corporation. All rights reserved.

7

Innovation

Variable Cylinder Management (VCM)

Cleaner Emissions+

Energy Savings

Cylinder Banks used only when needed

© 2010 Renesas Electronics Corporation. All rights reserved.

8

Our Scalable Solution

Renesas provides a flexible solution for managing high-current

applications which maximizes efficiency by intelligently

managing power to the various system rails. Much like

individual cylinders are activated and de-activated in the

Variable Cylinder Management engine technology, banks of

single packaged Point-of-Load (POL) devices are turned on and

off depending on the system’s power requirement for each of

the power rails at any given time.

© 2010 Renesas Electronics Corporation. All rights reserved.

9

Agenda

What is POL-SiP (point-of-load system-in-package)?

Scalable VR Concept and Architecture

Advantages of MCU Control and POL-SiP Devices

System Sensing, Monitoring, and Control

Overview of EVB and Software Control through GUI

Lab

System bring-up

Programming through GUI

System monitoring and control

© 2010 Renesas Electronics Corporation. All rights reserved.

10

Key Takeaways

By the end of this session you will be able to:

Understand POL-SiP concept

Understand 1-phase, 2-phase VR system by POL-SiP

Understand Scalable VR concept & architecture

Understand Scalable VR advantages

Identify appropriate applications for Scalable VR

© 2010 Renesas Electronics Corporation. All rights reserved.

11

What is a POL-SiP ?

All silicon chips for a Buck Converter in one package!

PWM Control& Gate Drive

External L&C

Top MOS FET

VIN

VOUT

3 chips in ONE package!

Control IC + Top MOS + Bottom MOS = 8mm x 8mm QFN-56

■■

Bottom MOS FET+ SBD

(Schottky Barrier Diode)

© 2010 Renesas Electronics Corporation. All rights reserved.

12

Why POL-SiP ?

1. Large scale Logic IC power requires Low Voltage and High Current

DCDCconverterVin Vcc Load ( IC )

Icc 20W

0

5

10

15

20

25

012345Vcc (V)

Icc

(A)

Low Voltage and High Current

High current density devices are required! POL-SiP

If a 20W load is used, then the

current increases and the voltage

decreases

I = P/V

■■

© 2010 Renesas Electronics Corporation. All rights reserved.

13

Why POL-SiP ?

2. The Vcc range of Large Scale Logic ICs is becoming increasingly narrow

Fast response converters are required

0

1

2

3

4

5

6

00.10.20.30.40.50.6

Process Rule (um)

Co

re v

olt

age

(V)

500mV(0.5um)

300mV(0.35um)

250mV(0.22um)

100mV(65nm)

POL-SiPPeak Current Control Mode

■■

© 2010 Renesas Electronics Corporation. All rights reserved.

14

Features of Renesas POL-SiP(R2J20702NPR2J20702NP)

92.5% @Vin=12V, Vout=1.8V, Fsw=500kHz

Up to 40A output current per device.

Output voltage fluctuation range is 40mV or below

2-phase operation, Current sharing

Peak current mode topology

Huge current

High efficiency

Fast response for transient load

Useful functions

(di/dt=50A/us, 4.5A step)

Over current protection ( Hiccup )

Synchronous operation, Tracking-start

Remote ON/OFF control

For even higher currents:

Easy andSimple

■■

© 2010 Renesas Electronics Corporation. All rights reserved.

15

Experimental Data of POL-SiP

Efficiency & Surface Temperature of the Package

Vin=12V, Vout=1.8V, fsw=500kHz, L=0.32uH, Cout=600uF, No Air Flow

Conditions

R2J 20702NP

8586878889909192939495

0 5 10 15 20 25 30 35 40Output Current (A)

Effi

cien

cy (

%)

R2J 20702NP

2030405060708090

100110120

0 5 10 15 20 25 30 35 40Output Current (A)

PK

G S

urfa

ce T

emp

(C)

■■

© 2010 Renesas Electronics Corporation. All rights reserved.

16

Experimental Data of POL-SiP

Transient response

Vin=12V, Vout=1.8V, fsw=468kHz, L=0.32uH, Cout=600uF

Conditions

Iout : 0A <=> 4.5A, Iout slope : 50A/us

30mV

Time (40us/div.)Time (40us/div.)

Vout(AC) Vout(AC)(50mV/div.)(50mV/div.)

30mV

Iout : 0A to 4.5A Iout : 4.5A to 0A

■■

© 2010 Renesas Electronics Corporation. All rights reserved.

17

Various Parallel Operation of POL-SiP

IL2

Iout up to 80A max

180° Phase-shifted

Current Sharing

40A

40A

80A

IL1 IL2

InductorCurrent

IL1

SW node1

SW node2

2-phase operation

synchronization

ex. 2.4V

ex. 1.5V

Synchronous operation

Tracking start

Ratiometric

Coincident

Vout1

Vout2

Vout1

Vout2

Multi-channel operation (ex. 2 channel operation)

(up to 5ch available)

■■

© 2010 Renesas Electronics Corporation. All rights reserved.

18

Evaluation Boards of POL-SiP

R2J20702R2J20702

2 channel EVB

Vin= 12V

Vout_1= 2.5V / Vout_2= 1.8V

Iout_1= 23A / Iout_2= 21A max.

fsw= 480kHz /channel

Default conditions AdjustableAdjustableVin= 12V

Vout= 1.8V

Iout= 20A max.

fsw= 500kHz

Default conditions

AdjustableAdjustable

R2J20702R2J20702

Single phase EVB

Default conditions Vin= 12V

Vout= 1.8V

Iout= 42A max.

fsw= 450kHz / phase

R2J20702R2J20702

AdjustableAdjustable

2 phase EVB

■■

© 2010 Renesas Electronics Corporation. All rights reserved.

19

Design tool

Design guide for loop compensation.

(EXCEL sheet)

■■

Enter into the red framed cells

obtain constants for loop compensation

© 2010 Renesas Electronics Corporation. All rights reserved.

20

Block diagram

ReferenceCurrentGenerator

50k

50k

ActiveCurrentSensing

S

R

Q

Q

OCP Comparator

Error Amp.

OSC

Pulse Generator

RES

Max. Duty

(Bi-lateral)

RES

Max. Duty

50ns

55ns Blanking

UVLO5V (4%)Regulator

ON / OFF

Gate DriveLogicCircuitOCP

PWM

ON / OFF

VIN

BOOTREG5ON/OFF

IREF

CT

SYNC

TRK-SS

FB

EO

Ishare RAMP CS

PGND

SW

SGND

DRV5

Idh

Idh22000

8V to 16V

SBD

VOUT

VOUT

CurrentSenseComparator

REG5

1.5V

OCPHiccupControl

0.6V(1%)

REG5

OCP

ON / OFF

(1024 pulses blank)

VCIN

0.1V

490uA

5.25V (4%)Regulator

DRV5

REG GOOD

REG GOOD

Supervisor

REG GOOD

■■

© 2010 Renesas Electronics Corporation. All rights reserved.

21

AACTIVE CTIVE CCURRENT URRENT SSENSINGENSING

ReferenceCurrentGenerator

50k

50k

ActiveCurrentSensing

S

R

Q

Q

OCP Comparator

Error Amp.

OSC

Pulse Generator

RES

Max. Duty

(Bi-lateral)

RES

Max. Duty

50ns

55ns Blanking

UVLO5V (4%)Regulator

ON / OFF

Gate DriveLogicCircuitOCP

PWM

ON / OFF

VIN

BOOTREG5ON/OFF

IREF

CT

SYNC

TRK-SS

FB

EO

Ishare RAMP CS

PGND

SW

SGND

DRV5

Idh

Idh22000

8V to 16V

SBD

VOUT

VOUT

CurrentSenseComparator

REG5

1.5V

OCPHiccupControl

0.6V(1%)

REG5

OCP

ON / OFF

(1024 pulses blank)

VCIN

0.1V

490uA

5.25V (4%)Regulator

DRV5

REG GOOD

REG GOOD

Supervisor

REG GOOD

■■

0.6V(1%)

© 2010 Renesas Electronics Corporation. All rights reserved.

22

SW voltage(10V/div)

CS voltage(0.5V/div)

Coil current(10A/div) 500ns/div.

Iout=0A Iout=10A Iout=20A

500ns/div.

Vin=12V, Vout=1.8V, Freq=469kHz, L=440nH, Cout=600uF, Rcs=410ohm

The peak voltage of CS pin is proportional to coil current

500ns/div.

AACTIVE CTIVE CCURRENT URRENT SSENSINGENSING

Wave Form

■■

© 2010 Renesas Electronics Corporation. All rights reserved.

23

Item Voltage mode Peak current mode

Loop analysis easy somewhat easy

Loop compensation somewhat complicated simple

Transient response slow fast

Noise immunity good good

Ext synchronization somewhat complicated very easy

Current sharing difficult very easy

Peak current mode = Big advantage

Peak Current Control Mode■■

© 2010 Renesas Electronics Corporation. All rights reserved.

24

Agenda

What is POL-SiP (point-of-load system-in-package)?

Scalable VR Concept and Architecture

Advantages of MCU Control and POL-SiP Devices

System Sensing, Monitoring, and Control

Overview of EVB and Software Control through GUI

Lab

System bring-up

Programming through GUI

System monitoring and control

© 2010 Renesas Electronics Corporation. All rights reserved.

25

Outline of the system

MicroprocessorR8C/3GA

DATACLKAlert#

VCC

Error amplifier

I2C

Phase shifted clock(Not PWM signals)

DAC setvoltage

Voltage feedback

Error voltage

Input source

Integrated Power SIPR2J20702NP

AANALOGNALOG

DDIGITALIGITAL

HHYBRIDYBRID

LOAD

Remote sensing buffer

■■

© 2010 Renesas Electronics Corporation. All rights reserved.

26

Concept of RENESAS Multi-phase VR by POL-SiP4-phase example

Clock-1

Clock-2

Clock-3

Clock-4

POL- SiP (8x8mm, QFN56)(Not a DrMOS),includes ACS(Active Current Sensing)and PWM modulator.

Error Voltage Bus

No “PWM” signals fed to POL-SIPs, only need phase shifted clock signals.Each POL-SIP is like a cylinder in VCM, MCU adds or sheds POL-SIPs to optimize load efficiency or performance as required

FromMCU

Error Amp.

■■

© 2010 Renesas Electronics Corporation. All rights reserved.

27

Agenda

What is POL-SiP (point-of-load system-in-package)?

Scalable VR Concept and Architecture

Advantages of MCU Control and POL-SiP Devices

System Sensing, Monitoring, and Control

Overview of EVB and Software Control through GUI

Lab

System bring-up

Programming through GUI

System monitoring and control

© 2010 Renesas Electronics Corporation. All rights reserved.

28

Key Highlights of RENESAS Hybrid Power Solution

Eliminates need for PWM control IC

Digital interface to host CPU - I2C - Vout control, status report, etc. Design flexibility - GUI

Fast transient response - Analog PWM (Peak current mode) - Output current sensing built-in Efficiency Boost - Copper Clip Bonding - New SBD JET MOSFET built-in

MicrocontrollerTechnology

Integrated Power SIPTechnology

AANALOGNALOG

DDIGITALIGITAL

HHYBRIDYBRID

New R8C/3GA

New R2J20702NP

■■

© 2010 Renesas Electronics Corporation. All rights reserved.

29

What’s NEW of Renesas Scalable VR solution

Tiny MCU (R8Cxx) POL-SiP (R2J20702NP)

• Serial Interface to main CPU• VR master control (VID, Phase)• Monitors (Io, Vo, Temp, etc)• Adaptive Control by S/W• High resolution Calibration

• VR slave driving• High Power Up to Io=40A/ch• High Efficiency• High fpwm Up to 1MHz• Current sensing built-in

■■

© 2010 Renesas Electronics Corporation. All rights reserved.

30

Agenda

What is POL-SiP (point-of-load system-in-package)?

Scalable VR Concept and Architecture

Advantages of MCU Control and POL-SiP Devices

System Sensing, Monitoring, and Control

Overview of EVB and Software Control through GUI

Lab

System bring-up

Programming through GUI

System monitoring and control

© 2010 Renesas Electronics Corporation. All rights reserved.

31

An example of a conventional V-mode controlled buck converter

Analog Digital Hybrid, C-mode controlled buck converterAnalog Digital Hybrid, C-mode controlled buck converter AA N A L O GN A L O G

DD I G I T A LI G I T A L

HH Y B R I DY B R I D

LOAD

DriverPWMControlCircuitry

Current informationVoltage feedback

PWM Signal

PWM SignalsFor other phases

Vin

Vcc

- Difficult to use a digital interface.- Complex PWM circuit required as phase number increases.

RENESAS Scalable VR by POL- SIP■■

LOAD

Current sense, PWM control,and Drive

Pulse generate,Analog error amp.,Circuitry

Voltage feedback

Clock pulse

Phase shifted clock For other phases

Vin

Vcc

Error voltage bus (Current information)

POL-SIP product.

P/N : R2J20702NP IntegratedPower SIP

Easy to accomplish with an MCU and simple analog components.

© 2010 Renesas Electronics Corporation. All rights reserved.

32

ACS for Peak Current Mode Control, OCP, L/L control and current sharing

Voltage Mode (Conventional)Generated PWM signal compared with Triangle wave and Error Voltage

Triangle wave Error Voltage

PWM

Reference Voltage

Triangle Wave

Feedback Voltage

PWMError Amp

PWM Comparator

Peak Current Mode (Proposed)Generated PWM signal compared with Choking Coil Current and Error Voltage

Choking Coil Current by ACS

PWM

Clock

Reference Voltage

Choking CoilCurrent

Feedback Voltage

PWM

Error amp

PWM Comparator

S

RQ#

ClockNeed current sensing circuit for over-current protection, light load control and current balance

Slow response Fast response

■■ RENESAS Scalable VR by POL- SIP

Error Voltage

© 2010 Renesas Electronics Corporation. All rights reserved.

33

DCR Sensing (Current)

Detect Output current using voltage drop of choking coil

PTC

PWM

Current sense

Active Current Sensing (Original)

Detect Output current using Sensing MOSFET in POL-SIP

Driver+FETs

Poor accuracy

Large Temperature dependency

Difficult to use small DCR choking coil

Larger PCB space required

Higher PCB thermal resistance Possible destruction of high side FET

High Accuracy (+/-5%)

No Temperature dependency

Can use small DCR choking coil

Less PCB space required

Lower PCB thermal resistance

High side FET never blows up

PWM IC

ACSCurrentSignal

MCUClock

POL-SIP

■■ RENESAS Scalable VR by POL- SIP

© 2010 Renesas Electronics Corporation. All rights reserved.

34

Iout Accuracy Target (2-phase)

0

10

20

30

40

50

60

70

80

0 20 40 60 80 100 120

VR Load (%)

Iou

t A

cc

ura

cy

(%

)

DCR ACS

DCR Sensing (Current)

PTC

PWM

Current sense Input Offset = +/-1mV

Active Current Sensing (Original)

Driver+FETsPWM IC

ACSCurrentSignal

MCUClock

POL-SIP

DCR=0.4mohm+/-8%

Current sense AmpGain deviation=+/-3%

Rex=470ohm+/-1%

ACS deviation=+/-5%

45-60A (typical)

DCR SensingDCR Sensing

ACS SensingACS Sensing

In this example, DCR Sensing does NOT consider:

DCR Temp dependency

NTC (thermistor) mismatching

sL/Rdc, sRcsCcs mismatching

Noise interference

If these items were considered, the accuracy would be worse.

Rcs Ccs

L+Rdc

■■ RENESAS Scalable VR by POL- SIP

© 2010 Renesas Electronics Corporation. All rights reserved.

35

Agenda

What is POL-SiP (point-of-load system-in-package)?

Scalable VR Concept and Architecture

Advantages of MCU Control and POL-SiP Devices

System Sensing, Monitoring, and Control

Overview of EVB and Software Control through GUI

Lab

System bring-up

Programming through GUI

System monitoring and control

© 2010 Renesas Electronics Corporation. All rights reserved.

36

6-phase VR

MCUR8C/2A

Example 1: Scalable VR 6-phase VR Evb■■

© 2010 Renesas Electronics Corporation. All rights reserved.

37

VID Monitor

Voltage Control

Voltage Control

Voltage Control

Example 1: Scalable VR 6-phase VR Block Diagram

……

Phase Control2

Phase Control1

Phase Control6

Enable2

Enable1

Enable6

POL-SiP2

POL-SiP6

VRM MCU(R8C/2A)

VPROTECT

VLOCAL

VS

EN

SE

LO

AD

Temperature

POL-SiP1

Vin_12V

MasterMCU

I2C,SMBus,PMBus

Output Current1

(Io=150A)6-Phase VR

■■

© 2010 Renesas Electronics Corporation. All rights reserved.

38

6-Phase Efficiency (%)

50

60

70

80

90

100

0 10 20 30 40 50 60 70 80 90 100

110

120

130

140

150

IOUT (A)

Eff

icie

ncy

(%

)

Efficiency(%)

VIN=12VVOUT=1.2V6-phasefPWM=540KHz300LFM AirflowNo heatsink

Master MCU R8C/2A + Slave POL-SiP R2J20702NP x6

Example 1: Scalable VR 6-phase VR Result■■

© 2010 Renesas Electronics Corporation. All rights reserved.

39

AANALOGNALOG

DDIGITALIGITAL

HHYBRIDYBRID

VR

+12V input

LOAD1.5V (80A)

PC

RS-232C

+5V input (for MCU)

I2C ~ RS232 interface circuitry

I2C port

LCD interface port (optional)

Example 2: Scalable VR 4-phase VR Evb■■

© 2010 Renesas Electronics Corporation. All rights reserved.

40

MicroprocessorR8C/3GA

DATACLKAlert#

VCC

Error amplifier

I2C

Phase shifted clock(Not PWM signals)

DAC setvoltage

Voltage feedback

Error voltage

Input source

Integrated Power SIPR2J20702NP

AANALOGNALOG

DDIGITALIGITAL

HHYBRIDYBRID

LOAD

Remote sensing buffer

Example 2: Scalable VR 4-phase VR Block Diagram■■

© 2010 Renesas Electronics Corporation. All rights reserved.

41

I2C serial communication

Four phase VR in 2.5” x 1”

Power Spec.• Vin = 12V typical• Vout = 1.5V• Iout = 80A• Freq = 500kHz• Efficiency >90% @ 80A• Load step +/-2.5% @ 30A step,

30A/us• Ripple voltage 15mVpp

AANALOGNALOG

DDIGITALIGITAL

HHYBRIDYBRID

Graphic interface• RS232C• Adjustable: Vout, Freq, Number of

phases• Monitor: Vin, Vout, Iin, Iout, Temp• Protection: OVP, OCP, OTP

2.5 inch

1 inch

Back side

POL-SIP

Example 2: Scalable VR 4-phase VR Specification■■

© 2010 Renesas Electronics Corporation. All rights reserved.

42

AANALOGNALOG

DDIGITALIGITAL

HHYBRIDYBRIDCondition; Vin=12V, Vo=1.5V, Freq=500kHz

Efficiency vs. Load current

85

86

87

88

89

90

91

92

0 10 20 30 40 50 60 70 80 90 100

Load current(A)

Effi

ciency

(%

SheddingNoAirflow

SheddingAirflow

Example 2: Scalable VR 4-phase VR Efficiency■■

© 2010 Renesas Electronics Corporation. All rights reserved.

43

AANALOGNALOG

DDIGITALIGITAL

HHYBRIDYBRIDCondition; Vin=12V, Vo=1.5V, Freq=300kHz and 500kHz Airflow=300LFM

Efficiency vs. Load current

85

86

87

88

89

90

91

92

93

0 10 20 30 40 50 60 70 80 90 100

Output current(A)

Eff

icency(%

)

Fsw=500KHz

Fsw=300KHz

Example 2: Scalable VR 4-phase VR Efficiency■■

© 2010 Renesas Electronics Corporation. All rights reserved.

44

AANALOGNALOG

DDIGITALIGITAL

HHYBRIDYBRIDCondition; Vin=12V, Vo=1.5V, Freq=500kHz

Package temperature vs. Load current

0

10

20

30

40

50

60

70

80

90

100

0 10 20 30 40 50 60 70 80 90 100

Load current(A)

Te

mp

era

ture

(de

gC

SheddingNoAirflow

SheddingAirflow

Example 2: Scalable VR 4-phase VR PKG Temp.■■

© 2010 Renesas Electronics Corporation. All rights reserved.

45

AANALOGNALOG

DDIGITALIGITAL

HHYBRIDYBRID

1phase 10A

4phase 40A

2phase 20A

4phase 80A

15mVpp 6mVpp

7mVpp 6mVpp

Condition; Vin=12V, Vo=1.5V, Freq=500kHz

Example 2: Scalable VR 4-phase VR Output Ripple■■10

mV

/div

10m

V/d

iv

10m

V/d

iv

10m

V/d

iv

1µs/div

1µs/div 1µs/div

1µs/div

© 2010 Renesas Electronics Corporation. All rights reserved.

46

AANALOGNALOG

DDIGITALIGITAL

HHYBRIDYBRID

Load freq.=1kHz

Load freq.=100kHz

Load freq.=10kHz

Load freq.=500kHz

76mVpp 68mVpp

58mVpp 30mVpp

Condition; Vin=12V, Vo=1.5V, Freq=500kHz, Io=0-30A(30A/us)

Example 2: Scalable VR 4-phase VR Load Transient■■50

mV

/div

50m

V/d

iv

50m

V/d

iv

50m

V/d

iv

100µs/div 50µs/div

5µs/div 2µs/div

© 2010 Renesas Electronics Corporation. All rights reserved.

47

Test environment for load transient testAANALOGNALOG

DDIGITALIGITAL

HHYBRIDYBRID

+5V input To DMM+12V input

Probe

The wires should be as short as possible so that minimize parasitic inductance.

Electrical Load (Keisoku-Giken)

■■

© 2010 Renesas Electronics Corporation. All rights reserved.

486

VR(2” x 1”)

+12V input

LOAD1.5V (80A)

PC

RS-232C

+5V input (for MCU)

I2C ~ RS232 interface circuitry

I2C port

LCD interface port (optional)

GUI

GUI (Graphic User Interface) … Controlled by PC■■

© 2010 Renesas Electronics Corporation. All rights reserved.

496

GUI (Graphic User Interface) … setting parameters■■

© 2010 Renesas Electronics Corporation. All rights reserved.

506

GUI (Graphic User Interface) … VR operating■■

© 2010 Renesas Electronics Corporation. All rights reserved.

516

GUI (Graphic User Interface) … OCP example■■

© 2010 Renesas Electronics Corporation. All rights reserved.

526

GUI (Graphic User Interface) … real time monitor

VOUT monitor window

IOUT monitor window

Temperature monitor window

OVP level

OCP level

■■

© 2010 Renesas Electronics Corporation. All rights reserved.

53

Agenda

What is POL-SiP (point-of-load system-in-package)?

Scalable VR Concept and Architecture

Advantages of MCU Control and POL-SiP Devices

System Sensing, Monitoring, and Control

Overview of EVB and Software Control through GUI

Lab

System bring-up

Programming through GUI

System monitoring and control

© 2010 Renesas Electronics Corporation. All rights reserved.

54

Questions?

What are the merits of an integrated solution, such as Renesas POL-SiP, versus a discrete solution?

Why is scalability important for VR design?

What are some advantages of Active Current Sensing(ACS)?

Audience Questions?

© 2010 Renesas Electronics Corporation. All rights reserved.

55

Our Scalable Solution

Renesas provides a flexible solution for managing high-current

applications which maximizes efficiency by intelligently

managing power to the various system rails. Much like

individual cylinders are activated and de-activated in the

Variable Cylinder Management engine technology, banks of

single packaged Point-of-Load (POL) devices are turned on and

off depending on the system’s power requirement for each of

the power rails at any given time.

© 2010 Renesas Electronics Corporation. All rights reserved. Renesas Confidential56

Thank You!

© 2010 Renesas Electronics Corporation. All rights reserved. Renesas Confidential57

Appendix