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Reliability Monitor Report High Temperature Operating Life Data Retention Bake Temperature Cycle Temperature & Humidity Bias/ HAST Steam Pressure Pot Fourth QUARTER 2006 ATMEL PROPRIETARY

Transcript of Reliability Monitor Report - caxapa.rucaxapa.ru/thumbs/765398/Relmtrq4-6.pdf · Reliability Monitor...

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Reliability Monitor Report

High Temperature Operating LifeData Retention BakeTemperature Cycle

Temperature & Humidity Bias/ HASTSteam Pressure Pot

Fourth QUARTER 2006ATMEL PROPRIETARY

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RELIABILITY MONITOR -- ATMEL PROPRIETARY

Table of Contents 1. Executive Summary 1 2. HTOL (sorted by product family) 2

3. HTOL (sorted by technology) 3 - 4 4. Data Retention Bake (sorted by product family) 5 5. Data Retention Bake (sorted by technology) 6 6. Temperature Cycle 7 7. Temperature Humidity Bias & HAST 8 8. Steam Pressure Pot 9 11. Technology List 10 12. Failure Rate Calculations 11 13. Definitions 12

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RELIABILITY MONITOR -- ATMEL PROPRIETARY 1 * indicates that preconditioning is performed prior to the stress test.

Reliability Monitor Report

Date: October 5, 2006 Executive Summary The intent of the Reliability Monitor Program is to measure the reliability of previously qualified devices on a quarterly basis. This is achieved by selecting representative devices within a process or package family and performing a series of reliability tests to ensure that the reliability has maintained over time. Listed below are the overall results for the last quarter. 1. High Temperature Operating Life (125° - 150°C; 0 failures)

Failure Rate: 12 FITS (1,471K device-hours) Note: The Exponential Model is used to derive FIT rates (60% Confidence; EA = 0.6

eV). Also, Thermal and Voltage Acceleration are used to compute the overall acceleration factor. Weighted acceleration factors (WAF) for a group of products are calculated by taking the weighted average of each device’s acceleration factor multiplied by its corresponding device hours.

2. Data Retention Bake (150°C; 0 failures)

Failure Rate: 9 FITS (839K device-hours) Note: The Exponential Model is used to derive FIT rates (60% Confidence; EA = 0.6

eV). Since there is no bias applied during testing and the stress temperature is fixed for all devices at 150°C, the acceleration factor is 117 for all groupings.

3. Temperature Cycle (-65°C to 150°C, 500 cycles) *

Failure Rate: 0.00% (0 failures out of 685 units)

4. Temperature Humidity Bias (85°C/85%RH) and HAST (130°C/85%RH) *

Failure Rate: 0.00% (0 failures out of 1M device-hours) Note: A 20:1 Acceleration Factor is used to combine HAST results with THB).

5. Steam Pressure Pot (121°C/100%RH) *

Failure Rate: 0.00% (0 failures out of 762 units)

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High Temperature Operating Life(sorted by FAMILY)

FAMILY QTR Device-Hours* WAF EFR PPM FITSREJ SS REJ SS REJ SS REJ SS

ASIC 3 0 976 0 897 0 466 0 389 503,700 34 0 53LAST 4Q 0 6,926 0 4,376 0 2,177 0 1,836 2,915,332 47 0 7

CCD 3LAST 4Q 0 45 0 45 0 34 0 34 59,848 78 0 196

D-FLASH 3 0 300 0 100 0 100 0 100 109,600 84 0 100LAST 4Q 0 900 0 300 0 300 0 300 328,800 84 0 33

EEPROM 3 0 1,400 0 1,200 0 300 0 300 460,800 57 0 35LAST 4Q 0 3,455 0 2,200 0 800 0 796 1,093,440 95 0 9

EPLD 3LAST 4Q 0 599 0 200 0 200 0 200 219,152 175 0 24

EPROM 3 0 300 0 100 0 100 0 100 109,600 84 0 100LAST 4Q 0 900 0 300 0 300 0 300 328,800 153 0 18

RF & Auto 3LAST 4Q 0 110 0 110 0 58 0 58 66,736 42 0 327

MICRO 3 0 1,000 0 254 0 254 0 177 251,308 20 0 184LAST 4Q 0 4,469 0 996 0 995 0 744 1,171,372 49 0 16

SRAM 3 0 60 0 60 0 45 0 45 47,520 19 0 1,042LAST 4Q 0 405 0 105 0 90 0 45 84,420 14 0 779

ATMEL 3 0 4,036 0 2,611 0 1,265 0 1,111 1,482,528 46 0 14LAST 4Q 0 18,106 0 8,819 0 5,141 0 4,500 6,647,180 66 0 2

* The Device-Hours computation includes additional read-outs not detailed in the report.

48 Hours 168 Hours 500 Hours 1K Hours

RELIABILITY MONITOR -- ATMEL PROPRIETARY 2

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High Temperature Operating Life(sorted by TECHNOLOGY)

TECH QTR Device-Hours* WAF EFR PPM FITSREJ SS REJ SS REJ SS REJ SS

Z92 3 0 156 0 77 0 77 0 0 42,292 9 0 2,318LAST 4Q 0 1,083 0 231 0 154 0 77 169,332 5 0 1,076

Z91 3 0 45 0 45 0 45 0 45 45,000 11 0 1,857LAST 4Q 0 390 0 90 0 90 0 45 81,900 10 0 1,160

Z86 3LAST 4Q 0 400 0 0 0 0 0 0 19,200 3 0 17,026

HCCD 3LAST 4Q 0 45 0 45 0 34 0 34 59,848 78 0 196

CMOS 3LAST 4Q 0 475 0 475 0 244 0 90 295,808 112 0 28

HCMOS 3LAST 4Q 0 45 0 45 0 45 0 45 90,000 78 0 131

BICMOS 3LAST 4Q 0 600 0 200 0 200 0 200 419,200 42 0 52

63K 3 0 600 0 200 0 200 0 200 219,200 84 0 50LAST 4Q 0 900 0 300 0 300 0 300 328,800 84 0 33

56.9K 3LAST 4Q 0 100 0 100 0 100 0 100 100,000 48 0 189

58K 3 0 300 0 77 0 77 0 0 49,204 4 0 5,175LAST 4Q 0 600 0 77 0 77 0 0 63,604 4 0 4,003

57K 3 0 115 0 115 0 100 0 100 102,520 26 0 345LAST 4Q 0 945 0 532 0 517 0 517 756,344 36 0 34

56K 3 0 300 0 300 0 100 0 100 133,600 48 0 142LAST 4Q 0 2,728 0 1,789 0 591 0 476 779,836 51 0 23

56.8 3 0 12 0 12 0 12 0 12 12,000 260 0 294LAST 4Q 0 99 0 99 0 99 0 99 186,000 42 0 117

46K 3LAST 4Q 0 87 0 87 0 87 0 87 174,000 27 0 195

44K 3 0 308 0 308 0 77 0 77 115,808 23 0 348LAST 4Q 0 924 0 924 0 231 0 231 347,424 27 0 98

43 K 3LAST 4Q 0 320 0 210 0 158 0 158 272,016 42 0 80

48 Hours 168 Hours 500 Hours 1K Hours

RELIABILITY MONITOR -- ATMEL PROPRIETARY 3

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High Temperature Operating Life(sorted by TECHNOLOGY)

TECH QTR Device-Hours* WAF EFR PPM FITSREJ SS REJ SS REJ SS REJ SS

48 Hours 168 Hours 500 Hours 1K Hours

39K 3LAST 4Q 0 1,200 0 400 0 400 0 396 436,400 149 0 14

35K 3 0 1,800 0 1,277 0 377 0 377 553,304 39 0 42LAST 4Q 0 5,752 0 2,602 0 1,201 0 1,032 1,503,068 52 0 12

34K 3 0 300 0 100 0 100 0 100 109,600 84 0 100LAST 4Q 0 900 0 300 0 300 0 300 328,800 153 0 18

26K 3 0 100 0 100 0 100 0 100 100,000 23 0 403LAST 4Q 0 300 0 300 0 300 0 300 300,000 52 0 59

19K 3LAST 4Q 0 300 0 100 0 100 0 100 109,600 308 0 27

ATMEL 3 0 4,036 0 2,611 0 1,265 0 1,111 1,482,528 44 0 14LAST 4Q 0 18,106 0 8,819 0 5,141 0 4,500 6,647,180 65 0 2

* The Device-Hours computation includes additional read-outs not detailed in the report.

RELIABILITY MONITOR -- ATMEL PROPRIETARY 4

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Data Retention Bake(sorted by FAMILY)

FAMILY QTR Device-Hours AF FITSREJ SS REJ SS REJ SS

ASIC 3 0 77 0 77 0 77 77,000 117 102LAST 4Q 0 308 0 308 0 308 308,000 117 25

D-FLASH 3 0 77 0 77 0 77 77,000 117 102LAST 4Q 0 227 0 227 0 227 227,000 117 35

EEPROM 3 0 308 0 308 0 308 308,000 117 25LAST 4Q 0 458 0 458 0 458 458,000 117 17

EPLD 3LAST 4Q 0 150 0 150 0 150 150,000 117 52

EPROM 3 0 77 0 77 0 77 77,000 117 102LAST 4Q 0 227 0 227 0 227 227,000 117 35

MICRO 3 0 331 0 331 0 331 331,000 117 24LAST 4Q 0 1,197 0 1,197 0 1,119 1,158,000 117 7

ATMEL 3 0 870 0 870 0 870 870,000 117 9LAST 4Q 0 2,567 0 2,567 0 2,489 2,528,000 117 3

168 Hours 500 Hours 1K Hours

RELIABILITY MONITOR -- ATMEL PROPRIETARY 5

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Data Retention Bake(sorted by TECHNOLOGY)

TECH QTR Device-Hours AF FITSREJ SS REJ SS REJ SS

Z92 3LAST 4Q 0 154 0 154 0 154 154,000 117 51

63 K 3 0 154 0 154 0 154 154,000 117 51LAST 4Q 0 204 0 204 0 204 204,000 117 38

56K 3 0 77 0 77 0 77 77,000 117 102LAST 4Q 0 231 0 231 0 231 231,000 117 34

39K 3 0 77 0 77 0 77 77,000 117 102LAST 4Q 0 327 0 327 0 327 327,000 117 24

35K 3 0 485 0 485 0 485 485,000 117 16LAST 4Q 0 1,043 0 1,043 0 965 1,004,000 117 8

34K 3 0 77 0 77 0 77 77,000 117 102LAST 4Q 0 227 0 227 0 227 227,000 117 35

56.8K 3LAST 4Q 0 231 0 231 0 231 231,000 117 34

19K 3LAST 4Q 0 100 0 100 0 100 100,000 117 78

58K 3LAST 4Q 0 50 0 50 0 50 50,000 117 157

ATMEL 3 0 870 0 870 0 870 870,000 117 9LAST 4Q 0 2,567 0 2,567 0 2,489 2,528,000 117 3

168 Hours 500 Hours 1K Hours

RELIABILITY MONITOR -- ATMEL PROPRIETARY 6

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Temperature Cycle

PACKAGE QTR % DefectiveREJ SS REJ SS REJ SS REJ SS REJ SS

BCC 3 0 154 0 154 0 154 0 154 0 0LAST 4Q 0 154 0 154 0 154 0 154 0 0 0.00%

CBGA 3 0 77 0 77 0 77 0 77 0 0LAST 4Q 0 77 0 77 0 77 0 77 0 0 0.00%

MLF / QFN 3 0 77 0 77 0 77 0 67 0 0LAST 4Q 0 304 0 304 0 304 0 139 0 0 0.00%

PDIP 3LAST 4Q 0 277 0 277 0 274 0 274 0 0 0.00%

PLCC 3 0 77 0 77 0 77 0 77 0 0LAST 4Q 0 458 0 458 0 458 0 227 0 0 0.00%

SAP 3 0 77 0 77 0 77 0 77 0 0 0.00%LAST 4Q 0 77 0 77 0 77 0 77 0 0 0.00%

SOIC 3 0 154 0 154 0 154 0 148 0 0LAST 4Q 0 353 0 353 0 353 0 148 0 0 0.00%

QFP 3 0 308 0 308 0 308 0 221 0 0LAST 4Q 0 774 0 774 0 774 0 423 0 0 0.00%

TSOP / VSOP 3 0 154 0 154 0 154 0 154 0 0LAST 4Q 0 504 0 504 0 504 0 504 0 0 0.00%

TSSOP 3 0 77 0 77 0 77 0 77 0 0LAST 4Q 0 77 0 77 0 77 0 77 0 0 0.00%

ATMEL 3 0 1,155 0 1,155 0 1,155 0 1,052 0 0 0.00%LAST 4Q 0 3,055 0 3,055 0 3,052 0 2,100 0 0 0.00%

100 Cycles 200 Cycles 1K Cycles 2K Cycles500 Cycles

RELIABILITY MONITOR -- ATMEL PROPRIETARY 7

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Temperature Humidity Bias / HASTTemperature Humidity Bias

PACKAGE QTR Device-Hours* % DefectiveREJ SS REJ SS REJ SS REJ SS REJ SS

BCC 3 0 154 0 154 0 154 0 0 154,000 0.00%LAST 4Q 0 154 0 154 0 154 0 0 0 0 154,000 0.00%

CBGA 3 0 77 0 77 0 77 0 0LAST 4Q 0 77 0 77 0 77 0 0 0 0 77,000 0.00%

MLF / QFN 3 0 77 0 77 0 77 0 0 77,000 0.00%LAST 4Q 0 303 0 303 0 154 0 0 0 0 228,500 0.00%

PDIP 3LAST 4Q 0 50 0 50 0 50 0 227 0 0 504,000 0.00%

PLCC 3 0 0 0 0 0 0 0 77 154,000 0.00%LAST 4Q 0 314 0 314 0 237 0 227 0 0 729,500 0.00%

SAP 3 0 77 0 77 0 77 0 0 77,000 0.00%LAST 4Q 0 77 0 77 0 77 0 0 0 0 77,000 0.00%

SOIC 3 0 154 0 154 0 154 0 77 308,000 0.00%LAST 4Q 0 385 0 385 0 308 0 77 0 0 500,500 0.00%

SSOP 3LAST 4Q 0 159 0 159 0 159 0 0 0 0 159,000 0.00%

QFP 3 0 231 0 231 0 154 0 77 346,500 0.00%LAST 4Q 0 442 0 442 0 273 0 77 0 0 511,500 0.00%

TSOP / VSOP 3 0 0 0 0 0 0 0 154 308,000 0.00%LAST 4Q 0 150 0 150 0 150 0 404 0 0 958,000 0.00%

TSSOP 3 0 77 0 77 0 77 0 0 77,000 0.00%LAST 4Q 0 77 0 77 0 77 0 0 0 0 77,000 0.00%

ATMEL 3 0 847 0 847 0 770 0 385 0 0 1,578,500 0.00%LAST 4Q 0 2,188 0 2,188 0 1,716 0 1,012 0 0 3,976,000 0.00%

HAST500 Hours168 Hours 500 Hours 1K Hours 100 Hours

RELIABILITY MONITOR -- ATMEL PROPRIETARY 8

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Steam Pressure Pot

PACKAGE QTR % DefectiveREJ SS REJ SS REJ SS

CBGA 3 0 77 0 77 0 0 0.0%LAST 4Q 0 77 0 77 0 0 0.0%

MLF / QFN 3 0 77 0 0 0 0 0.0%LAST 4Q 0 304 0 150 0 0 0.0%

QFP 3 0 222 0 77 0 77 0.0%LAST 4Q 0 695 0 77 0 77 0.0%

PDIP 3LAST 4Q 0 277 0 277 0 277 0.0%

PLCC 3 0 77 0 77 0 77 0.0%LAST 4Q 0 458 0 227 0 227 0.0%

SAP 3 0 77 0 77 0 0 0.0%LAST 4Q 0 77 0 77 0 0 0.0%

SOIC 3 0 154 0 77 0 0 0.0%LAST 4Q 0 539 0 77 0 0 0.0%

SSOP 3LAST 4Q 0 317 0 0 0 0 0.0%

TSOP / VSOP 3 0 154 0 154 0 154 0.0%LAST 4Q 0 504 0 504 0 504 0.0%

TSSOP 3 0 77 0 77 0 0 0.0%LAST 4Q 0 77 0 77 0 0 0.0%

ATMEL 3 0 915 0 616 0 308 0.00%LAST 4Q 0 3,325 0 1,543 0 1,085 0.00%

96 Hours 168 Hours 240 Hours

RELIABILITY MONITOR -- ATMEL PROPRIETARY 9

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FAB TECH TYPE CMOS / BIP LITHOGRAPHY [µm] TYPICAL PRODUCTS / APPLICATIONS

5 15.3 EEPROM 1.8 - 2.3 sEEPROM5 19.3 EEPROM 1.1 sEEPROM5 19.5 Embedded Memory Configurator 1.0 Configurator5 19.6 Embedded Memory 0.7 sEEPROM, MC (Intel core), MC (AVR core)5 19.7 EPLD 0.5 PLD5 19.76 EPLD 0.5 PLD5 19.8 CMOS 0.7 ASIC5 19.8 Embedded Memory Configurator 0.7 sEEPROM, PEROM, EEPROM, Configurator5 19.9 Embedded Memory 0.7 Smartcard, AVR, µC

5 25 BiCMOS 1.0 ASIC5 26 Logic 0.7 ASIC5 33.5 FLASH 0.55 34 EPROM 0.5 EPROM5 35.5 Embedded Memory Configurator 0.35 Configurators, sEEPROM, FLASH, Microcontroller, EPLD5 37 EEPROM 0.35 FLASH, PEROM, DATA FLASH, sEEPROM5 39 EEPROM 0.25 DATA FLASH5 39.1 EEPROM 0.25 FLASH, DATA FLASH5 42 BiCMOS 0.6 ASIC

GFO / CSO 43 ASIC, TX RFHNO 46 RF & Auto

5 55 Logic 0.5 ASIC5 55.8 CMOS 0.5 ASIC5 56 Logic 0.35 ASIC5 56.8 Embedded Memory 0.35 ASIC7 57.0 CMOS 0.25 ASIC7 57.5 CMOS 0.21 ASIC7 58.0 CMOS 0.18 ASIC

SJO 61 CMOS 0.18 FLASHHNO BCDMOS 6BD1 0.8 ASICHNO BICMOS RF & AutoGFO HCCD1 NMOS 2.5 CCDGFO HCCD3 NMOS 1.5 CCDHNO I²L 6IL4 2 ASICHNO SIGE1 6SG1 0.8 ASICHNO UHF 6UH6 0.5 ASICNTO Z86 CMOS Digital 0.8 SRAM,MICRO, VAN DLCNTO Z91 CMOS Digital 0.6 SRAM, ASIC, MICRONTO Z92 CMOS Digital 0.5 ASIC, MICRO,VAN DLCNTO Z94 CMOS + EPROM 0.5 OTP MICROHNO Z95 RF & AutoHNO Z96 RF & Auto

Technology List

RELIABILITY MONITOR -- ATMEL PROPRIETARY 10

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RELIABILITY MONITOR -- ATMEL PROPRIETARY 22 11

Failure Rate Calculations Failure Rate:

λχ α

=⋅

⋅ ⋅

− ⋅ +( , )1100

2 2

2 910

2n

AF DH

where, λ = Failure Rate (FITS) χ2 = Failure Estimate α = Confidence Level (60% or 90%) n = Number of Failures AF = Overall Acceleration Factor (TAF x VAF) DH = Device Hours Thermal Acceleration:

TAF eek T P T Pa

f f JAf s s JAs=⋅

+ ⋅−

+ ⋅

1 1( ) ( )θ θ

where, TAF = Thermal Acceleration Factor EA = Activation Energy (eV) k = Boltzman’s Constant (8.617 x 10-5 eV/°K) T = Temperature (°K) f = Field Conditions s = Stress Conditions P = Power Dissipation (W) θJA = Thermal Resistance Coefficient - Junction to Ambient (°C/W) Voltage Acceleration:

[ ]VAF eZ V VS n= ⋅ −

where, VAF = Voltage Acceleration Factor Vs = Stress Voltage (V) Vn = Nominal Voltage (V) Z = Voltage Acceleration Constant (typically, 0.5 < Z < 1.0)

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RELIABILITY MONITOR -- ATMEL PROPRIETARY 22 12

Definitions Data Retention Bake (DRB): This test is used to measure a device’s ability to

retain a charge for extended periods of time without applying voltage bias. Stressing at high temperatures (150°C for plastic packages) accelerates any discharge causing the memory state to change.

Failures In Time (FITS): This is the unit measure for expressing failure rates and

is identical to the expression PPM/K hours. For example, three failures out of a million components tested for one thousand hours equates to 3 FITS.

High Temperature Operating Life (HTOL): The purpose of this test is to

accelerate thermally activated failure mechanisms through the use of high temperatures (typically between 125°C and 150°C), increased voltage, and dynamic bias conditions. Readouts at various time points are taken to determine the Early Failure Rate (EFR) and Intrinsic Failure Rate (IFR). EFR is expressed in defective parts per million (DPPM) and IFR is expressed in Failures in Time (FITS at 55°C).

Highly Accelerated Stress Test (HAST): The purpose of this test is to evaluate a

plastic packaged component’s ability to withstand harsh environmental conditions with extreme temperature and humidity levels. The parts are stressed to high temperature (130°C) and relative humidity (85%RH) conditions in a biased state to achieve maximum acceleration.

Steam Pressure Pot (SPP): The test is used to evaluate a plastic packaged

component’s ability to withstand severe conditions of pressure (15 psig), temperature (121°C), and humidity (100%RH).

Temperature Cycle (TC): This test is used to measure a product’s sensitivity to

thermal stresses due to differences in expansion and contraction characteristics of the die and mold compound by repeated alternating temperature dwells between high and low temperature extremes.

Temperature Humidity Bias (THB): The purpose of this test (85°C/85%RH) is

identical to HAST. The only difference is that HAST accelerates THB by a factor of 20:1 due to the increase in temperature during test.