Rapid Cleaning Using Novel Processes With Coangs€¦ · 3/4/2016 · •Mul7-purpose •Metal...
16
DAETEC Rapid Cleaning Using Novel Processes With Coa7ngs Alex Brewer and John Moore Daetec, LLC 1227 Flynn Rd., Unit 310 Camarillo CA 93012 www.daetec.com [email protected] Surface PreparaHon and Cleaning Conference April 2016 2016 SPCC Santa Clara California 1
Transcript of Rapid Cleaning Using Novel Processes With Coangs€¦ · 3/4/2016 · •Mul7-purpose •Metal...
DAETEC
RapidCleaningUsingNovelProcessesWithCoa7ngs
AlexBrewerandJohnMooreDaetec,LLC
1227FlynnRd.,[email protected]
SurfacePreparaHonandCleaningConferenceApril2016
2016SPCCSantaClaraCalifornia 1
DAETEC
• Coa7ngsthatClean– CoatsCleansTM–emulsifyPR– WashablePrimers–liHoff/protectfrommetalX-linking
2016SPCCSantaClaraCalifornia 2
WashableCoa7ngs
FFTapeWashableSafe
• WashableCoa7ngs/Adhesives– Laserprocessing– Temporarybonding– Dicingandpolishing– Planarizing
DAETEC
CoatsCleansTMvs.Immersion
• Fast• Mul7-purpose• MetalSafe• WaterRinse• EHSApproved
• LongTime• Ineffec7ve• Corrosion• SolventIntensive• Hazardous
SolventImmersionTreatedWafers
UsingLiquids(Solvents)toCleanSolids(Polymers)
UsingSolids(Polymers)toCleanSolids(Polymers)Coats/CleansTM
Coat&WaterWashTreatedWafers
32016SPCCSantaClaraCalifornia
DAETEC
H2O Rinse
StrippingNeg-AcrylicPR(Bumping)
2016SPCCSantaClaraCalifornia 4
WaferID Before–PRPresent A2er<15minDissolve/Rinse
1Pos-LiqMerck
AZP462050-60um
2Neg-Liq
JSRTHB-151N20-24um
3Neg-Liq
DOWBPR-10050-60um
!
! ! ! !
WaferID Before–PRPresent A2er<15minDissolve/Rinse
4Neg-DFDuPont
WB100-series100-120um
5Neg-DFTOK
100-120um
6Neg-DF
AsahiSunfort100-125um
! ! ! !
Coats/Cleans
PR PR
Coating Heat/Emulsify
DAETEC
WashablePrimer-EliminatesResidue
2016SPCCSantaClaraCalifornia 5
Adhesive
Stripping DIW Rinsing
Adhesive
Dry Clean Substrate
0
50
100
150
200
250
0 20 40 60 80 100 120
Tempe
rature(C
)
Time(sec)
ProcessCleansonRubberCoa=ng+WashablePrimer
WaferCleans,temperaturemonitorduringrota=on
Rinsing,Drying
0.00E+00
2.00E-04
4.00E-04
6.00E-04
8.00E-04
1.00E-03
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
Curren
t(am
ps)
Voltage
Hg-ProbeSurfaceMeasurementonCo,FollowingTreatment
NotClean
SolventSolvent+RinseCoat
DAETEC
ImprovedThermalResistance
2016SPCCSantaClaraCalifornia 6
• ChemicalfuncHonality• Phenyl• Polyester
ThermalResistance
• Phenylsilicones• Polyphenylsulfones• Saltconjugates
DaeCoatTMSystems[ [
DAETEC
ThermalResistantWashableCoa7ngs
2016SPCCSantaClaraCalifornia 7
200C
250C
300C
ThermalExposure AUerRTWaterRinsePVA PVP DaeCoatTM PVA PVP DaeCoatTM
DAETEC
Ex.:WaferTemporaryBonding
ProcessDemand• Objec7ve:Waferthinning,
backsideprocessing• Mechanical(e.g.grind):Yes• Thermalresistance:<300C• Process/chemicals:Yes• Uniformity:~2um
Recommenda7on• DaeCoatTM355
– Greensolventwashable,DaeCleanTM300
– Broadchemicalresistance– Thermalresistance:>300C
• Carrier:Solid,duetosmalldie,simplerelease/cleans– chemicaldiffusion– recycled
2016SPCCSantaClaraCalifornia 8
DAETEC
Thinning,Processing,Release
2016SPCCSantaClaraCalifornia 9
Grinding,backsideprocessing,singula7on
Singula7onoffers1-2mmchannelbetweendevicestoenablesimpledebond&wash
DAETEC
Immersion AdhesiveDissolu7on CarrierRelease/Recycle
DaeCleanTM300
DaeCleanTM300
Device:Capture/FurtherProcessing
2016SPCCSantaClaraCalifornia 10
GreenSolventWashAdhesive
DAETEC
Ex.:DeviceTemporaryBonding
ProcessDemand• Objec7ve:LTCCflip-chip
bond&encapsulate• Mechanical(e.g.grind):No• Thermalresistance:~275C• Process/chemicals:limited,
RTfluxcleaner• Uniformity:<10%
Recommenda7on• DaeCoatTM535
– HotDIWwashable– RTchemicalresistance– Thermalresistance:>300C
• Carrier:Porous– chemicaldiffusion– recycled
2016SPCCSantaClaraCalifornia 11
DAETEC
LTCC/HTCC• Microelectronicsonaceramicsubstrate
• MulH-layerpackaging• MEMS,military,RF,wireless• Thickness<50umto>250um• Commonly100-150um• Greentape–severalsuppliers• Extremelyfragile–handlingchallenge!
2016SPCCSantaClaraCalifornia 12
DAETEC 2016SPCCSantaClaraCalifornia 13
FilmFrameAkachtodevicefront-side
HotDIWWash(<80C)
UVDebondPick&Place
UVtapefilmChemicalSafe
PorousCarrierDebond
DIWWashAdhesive(LTCC)
DAETEC
Ex.:WaferPlanariza7on
ProcessDemand• Objec7ve:Wafer
planarizingcoaHngforbacksideprocessing
• Mechanical(e.g.grind):No• Thermalresistance:<300C• Process/chemicals:Yes• Uniformity:<5%• Special:Desiretofinishon
FFtape
Recommenda7on• DaeCoatTM357
– Greensolventwashable,DaeCleanTM300
– Broadchemicalresistance– Thermalresistance:>300C
• Carrier:desireFFtape– SafeforDaeCleanTM300
2016SPCCSantaClaraCalifornia 14
DAETEC
WashablePlanariza7onCoa7ng
2016SPCCSantaClaraCalifornia 15© Fraunhofer IZM
� Sputter deposition of 200nm Ti:W + 300nm Copper on 250µm thick PCA-151.118-002 using LLS802 multi target tool
Sputtering Test
Chamber Capability: 24 x 4“ - 6“ wafers per batch 8 x 8“ wafers per batch 4 x 300 mm wafers per batch
wafer with 100:1 mix ratio after sputtering
wafer with 50:1 mix ratio after
sputtering
Sputter deposition possible!
DaeCoatTM357
DAETEC 2016SPCCSantaClaraCalifornia 16
Parameter DaeCoatTM355
DaeCoatTM357
DaeCoatTM515
DaeCoatTM535
DaeCoatTM615
CoaHngThickness
<5-100um <5-250um <5-100um <5-60um <5-60um
Cure UV/Thermal UV/Thermal Thermal Thermal Thermal
Maxtemp ~300C ~300C ~300C ~300C ~200C
ApplicaHon TempBondingorCoaHng
TempPlanarizingCoaHng
LaserProcessing
TempBondingorCoaHng
TempBondingorCoaHng
ResistsRTDIW*
ResistsAcids*
ResistsLithoStripper
Chemistries*
CleanCondiHons
DaeCleanTM300
(SafeSolvent)
DaeCleanTM300
(SafeSolvent)
RTDIW
80C,DIW
DaeCleanTM150
(Detergent)
✔✖
✔
✔✔
✔
✔ ✔✔✔
✖
✖ ✖
✖
✖
