PSMN8R5-60YS€¦ · N-channel LFPAK 60 V, 8 mΩ standard level MOSFET 22 July 2015 Product data...

PSMN8R5-60YSN-channel LFPAK 60 V, 8 mΩ standard level MOSFET22 July 2015 Product data sheet

1. General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 °C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.

2. Features and benefits• Advanced TrenchMOS provides low RDSon and low gate charge• High efficiency gains in switching power converters• Improved mechanical and thermal characteristics• LFPAK provides maximum power density in a Power SO8 package

3. Applications• DC-to-DC converters• Lithium-ion battery protection• Load switching• Motor control• Server power supplies

4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 60 V

ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 2 - - 76 A

Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 106 W

Tj junction temperature -55 - 175 °C

Static characteristics

VGS = 10 V; ID = 15 A; Tj = 100 °C;Fig. 12

- - 12.8 mΩRDSon drain-source on-stateresistance

VGS = 10 V; ID = 15 A; Tj = 25 °C;Fig. 13

- 5.6 8 mΩ

Dynamic characteristics

QGD gate-drain charge VGS = 10 V; ID = 60 A; VDS = 30 V;Fig. 15; Fig. 14

- 7.7 - nC

© Nexperia B.V. 2017. All rights reserved

Nexperia PSMN8R5-60YSN-channel LFPAK 60 V, 8 mΩ standard level MOSFET

PSMN8R5-60YS All information provided in this document is subject to legal disclaimers.

Product data sheet 22 July 2015 2 / 14

Symbol Parameter Conditions Min Typ Max Unit

QG(tot) total gate charge VGS = 10 V; ID = 60 A; VDS = 30 V;Fig. 14; Fig. 15

- 39 - nC

Avalanche ruggedness

EDS(AL)S non-repetitive drain-source avalancheenergy

VGS = 10 V; Tj(init) = 25 °C; ID = 76 A;Vsup ≤ 60 V; RGS = 50 Ω; unclamped

- - 97 mJ

5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 S source

2 S source

3 S source

4 G gate

mb D mounting base; connected todrain

mb

1 2 3 4

LFPAK56; Power-SO8 (SOT669)

S

D

G

mbb076

6. Ordering informationTable 3. Ordering information

PackageType number

Name Description Version

PSMN8R5-60YS LFPAK56;Power-SO8

Plastic single-ended surface-mounted package(LFPAK56; Power-SO8); 4 leads

SOT669

7. MarkingTable 4. Marking codesType number Marking code

PSMN8R5-60YS 8R560

8. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 60 V

VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 60 V





Symbol Parameter Conditions Min Max Unit

VGS gate-source voltage -20 20 V

Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 106 W

VGS = 10 V; Tmb = 100 °C; Fig. 2 - 54 AID drain current

VGS = 10 V; Tmb = 25 °C; Fig. 2 - 76 A

IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 303 A

Tstg storage temperature -55 175 °C

Tj junction temperature -55 175 °C

Tsld(M) peak soldering temperature - 260 °C

Source-drain diode

IS source current Tmb = 25 °C - 76 A

ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 303 A

Avalanche ruggedness

EDS(AL)S non-repetitive drain-sourceavalanche energy

VGS = 10 V; Tj(init) = 25 °C; ID = 76 A;Vsup ≤ 60 V; RGS = 50 Ω; unclamped

- 97 mJ

Tmb (°C)0 20015050 100

03aa16

40

80

120

Pder(%)

0

Fig. 1. Normalized total power dissipation as a function of mounting base temperature





003aad791

0

20

40

60

80

100

0 50 100 150 200Tmb (°C)

ID(A)

Fig. 2. Continuous drain current as a function of mounting base temperature

003aad792

10- 1

1

10

102

103

10- 1 1 10 102 103VDS (V)

ID(A)

DC

Limit RDSon = VDS / ID

100 ms10 ms

100 µs

tp = 10 µs

1 ms

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

9. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistancefrom junction tomounting base

Fig. 4 - 0.63 1.42 K/W





003aad834

single shot

0.2

0.1

0.05

0.02

10-3

10-2

10-1

1

10-6 10-5 10-4 10-3 10-2 10-1 1tp (s)

Zth(j-mb)

(K/W)d = 0.5

tpT

P

t

tpT

δ =

Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typicalvalues

10. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

Static characteristics

ID = 250 µA; VGS = 0 V; Tj = -55 °C 54 - - VV(BR)DSS drain-sourcebreakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V

VGS(th) gate-source thresholdvoltage

ID = 1 mA; VDS = VGS; Tj = 25 °C;Fig. 10; Fig. 11

2 3 3.8 V

ID = 1 mA; VDS = VGS; Tj = -55 °C;Fig. 11

- - 4.3 VVGSth gate-source thresholdvoltage

ID = 1 mA; VDS = VGS; Tj = 175 °C;Fig. 11

0.95 - - V

VDS = 60 V; VGS = 0 V; Tj = 25 °C - 0.03 2 µAIDSS drain leakage current

VDS = 60 V; VGS = 0 V; Tj = 125 °C - - 50 µA

VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nAIGSS gate leakage current

VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA

VGS = 10 V; ID = 15 A; Tj = 175 °C;Fig. 12

- 12 18.4 mΩ

VGS = 10 V; ID = 15 A; Tj = 100 °C;Fig. 12

- - 12.8 mΩ

RDSon drain-source on-stateresistance

VGS = 10 V; ID = 15 A; Tj = 25 °C;Fig. 13

- 5.6 8 mΩ

RG gate resistance f = 1 MHz - 0.61 - Ω





Symbol Parameter Conditions Min Typ Max Unit

Dynamic characteristics

ID = 60 A; VDS = 30 V; VGS = 10 V;Fig. 14; Fig. 15

- 39 - nCQG(tot) total gate charge

ID = 0 A; VDS = 0 V; VGS = 10 V - 33 - nC

QGS gate-source charge ID = 60 A; VDS = 30 V; VGS = 10 V;Fig. 15; Fig. 14

- 13.3 - nC

QGS(th) pre-threshold gate-source charge

- 7 - nC

QGS(th-pl) post-threshold gate-source charge

ID = 60 A; VDS = 30 V; VGS = 10 V;Fig. 14

- 6.2 - nC

QGD gate-drain charge ID = 60 A; VDS = 30 V; VGS = 10 V;Fig. 15; Fig. 14

- 7.7 - nC

VGS(pl) gate-source plateauvoltage

VDS = 30 V; Fig. 14; Fig. 15 - 5.2 - V

Ciss input capacitance - 2370 - pF

Coss output capacitance - 307 - pF

Crss reverse transfercapacitance

VDS = 30 V; VGS = 0 V; f = 1 MHz;Tj = 25 °C; Fig. 16

- 172 - pF

td(on) turn-on delay time - 18.4 - ns

tr rise time - 13.7 - ns

td(off) turn-off delay time - 32.4 - ns

tf fall time

VDS = 30 V; RL = 0.5 Ω; VGS = 10 V;RG(ext) = 4.7 Ω

- 9.2 - ns

Source-drain diode

VSD source-drain voltage IS = 15 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.8 1.2 V

trr reverse recovery time - 43.3 - ns

Qr recovered charge

IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;VDS = 30 V - 61.4 - nC





003aad794

0

20

40

60

0 20 40 60 80ID (A)

gfs(S)

Fig. 5. Forward transconductance as a function ofdrain current; typical values

003aad801

0

1000

2000

3000

4000

0 3 6 9 12VGS (V)

C(pF)

Ciss

Crss

Fig. 6. Input and reverse transfer capacitances as afunction of gate-source voltage, typical values

003aad797

0

10

20

30

40

4 8 12 16 20VGS (V)

RDSon(mΩ)

Fig. 7. Drain-source on-state resistance as a functionof gate-source voltage; typical values

003aad795

0

20

40

60

80

0 0.5 1 1.5 2VDS (V)

ID(A)

5.510

5

VGS (V) = 4.5

67

Fig. 8. Output characteristics: drain current as afunction of drain-source voltage; typical values





003aad796

0

20

40

60

80

0 2 4 6VGS (V)

ID(A)

Tj = 175 °C Tj = 25 °C

Fig. 9. Transfer characteristics: drain current as afunction of gate-source voltage; typical values

aaa-019191

0 1 2 3 4 510-6

10-5

10-4

10-3

10-2

10-1

VGS (V)

IDID(A)(A)

TypTypMinMin MaxMax

Tj = 25 °C; VDS = 5V

Fig. 10. Sub-threshold drain current as a function ofgate-source voltage

aaa-019190

-60 -30 0 30 60 90 120 150 1800

1

2

3

4

5

Tj (°C)

VGS(th)VGS(th)(V)(V)

TypTyp

MinMin

MaxMax

ID = 1 mA ; VDS = VGS

Fig. 11. Gate-source threshold voltage as a function ofjunction temperature

003aad696

0

0.4

0.8

1.2

1.6

2

2.4

-60 0 60 120 180Tj (°C)

a

Fig. 12. Normalized drain-source on-state resistancefactor as a function of junction temperature.





003aad798

5

10

15

20

25

0 20 40 60 80ID (A)

RDSon(mΩ)

6

7

VGS (V) = 5 5.5

810

Fig. 13. Drain-source on-state resistance as a functionof drain current; typical values

003aaa508

VGS

VGS(th)

QGS1

QGS2

QGD

VDS

QG(tot)

ID

QGS

VGS(pl)

Fig. 14. Gate charge waveform definitions

003aad799

0

2

4

6

8

10

0 20 40 60QG (nC)

VGS(V)

VDS = 30 V

12 V

48 V

Fig. 15. Gate-source voltage as a function of gatecharge; typical values

003aad800

102

103

104

10- 1 1 10 102VDS (V)

C(pF)

Ciss

Coss

Crss

Fig. 16. Input, output and reverse transfer capacitancesas a function of drain-source voltage; typicalvalues





003aad802

0

20

40

60

80

0 0.4 0.8 1.2VSD (V)

IS(A)

Tj = 175 °C Tj = 25 °C

Fig. 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values





11. Package outline

ReferencesOutlineversion

Europeanprojection Issue date

IEC JEDEC JEITA

SOT669 MO-235

sot669_po

11-03-2513-02-27

Unit(1)

mmmaxnommin

1.20

1.01

0.15

0.000.25

0.50

0.35

4.41

3.62

2.2

2.0

6.2

5.8

0.85

0.40

A

Dimensions (mm are the original dimensions)

Note1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669

A1 A2

1.10

0.95

A3 b b2 b3

0.1

L2 w y

8°

0°

θ

b4 c c2 D(1) D1(1) E(1) E1(1)

3.3

3.1

e

1.27

H L

0.25

0.19

0.30

0.24

4.20 1.3

0.80.25

0.9

0.7

4.10

3.80

5.0

4.8

1.3

0.8

L1

A C

1/2 e

w A

0 5 mm

scale

e

E1

b

c2

A2

1 2 3 4

mountingbase

D1

c

E

b2

b3

b4

H D

L2

L1

C

X

y C

q

(A3)

L

A

A1

detail X

Fig. 18. Package outline LFPAK56; Power-SO8 (SOT669)





12. Legal information

12.1 Data sheet statusDocumentstatus [1][2]

Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] datasheet

Qualification This document contains data from thepreliminary specification.

Product[short] datasheet

Production This document contains the productspecification.

[1] Please consult the most recently issued document before initiating orcompleting a design.

[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.nexperia.com.

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Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local Nexperiasales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.

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13. Contents1 General description ............................................... 12 Features and benefits ............................................13 Applications ........................................................... 14 Quick reference data ............................................. 15 Pinning information ...............................................26 Ordering information .............................................27 Marking ................................................................... 28 Limiting values .......................................................29 Thermal characteristics .........................................410 Characteristics .......................................................511 Package outline ................................................... 1112 Legal information .................................................1212.1 Data sheet status ............................................... 1212.2 Definitions ...........................................................1212.3 Disclaimers .........................................................1212.4 Trademarks ........................................................ 13

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 22 July 2015

PSMN8R5-60YS€¦ · N-channel LFPAK 60 V, 8 mΩ standard level MOSFET 22 July 2015 Product data...

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