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PSMN020-30MLCN-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33using TrenchMOS Technology4 September 2012 Product data sheet
1. Product profile
1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.
1.2 Features and benefits• Low parasitic inductance and resistance• Optimised for 4.5V Gate drive utilising Superjunction technology• Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads
1.3 Applications• DC-to-DC converters• Load switching• Synchronous buck regulator
1.4 Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C - - 30 V
ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 - - 31.8 A
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 33 W
Tj junction temperature -55 - 175 °C
Static characteristics
VGS = 4.5 V; ID = 5 A; Tj = 25 °C;Fig. 10
- 20.5 27 mΩRDSon drain-source on-stateresistance
VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 10 - 14.7 18.1 mΩ
Dynamic characteristics
QGD gate-drain charge VGS = 4.5 V; ID = 5 A; VDS = 15 V;Fig. 12; Fig. 13
- 1.7 - nC
QG(tot) total gate charge VGS = 4.5 V; ID = 5 A; VDS = 15 V;Fig. 12; Fig. 13
- 4.6 - nC
© Nexperia B.V. 2017. All rights reserved
Nexperia PSMN020-30MLCN-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using
TrenchMOS Technology
PSMN020-30MLC All information provided in this document is subject to legal disclaimers.
Product data sheet 4 September 2012 2 / 13
2. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol
1 S source
2 S source
3 S source
4 G gate
mb D mounting base; connected todrain
1 432
LFPAK33 (SOT1210)
S
D
G
mbb076
3. Ordering informationTable 3. Ordering information
PackageType number
Name Description Version
PSMN020-30MLC LFPAK33 Plastic single ended surface mounted package (LFPAK33); 4leads
SOT1210
4. Limiting valuesTable 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj = 25 °C - 30 V
VGS gate-source voltage -20 20 V
VGS = 10 V; Tmb = 25 °C; Fig. 1 - 31.8 AID drain current
VGS = 10 V; Tmb = 100 °C; Fig. 1 - 22.5 A
IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4 - 127 A
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 33 W
Tstg storage temperature -55 175 °C
Tj junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
VESD electrostatic discharge voltage MM (JEDEC JESD22-A115) 130 - V
Source-drain diode
IS source current Tmb = 25 °C - 27.4 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 127 A
© Nexperia B.V. 2017. All rights reserved
Nexperia PSMN020-30MLCN-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using
TrenchMOS Technology
PSMN020-30MLC All information provided in this document is subject to legal disclaimers.
Product data sheet 4 September 2012 3 / 13
Symbol Parameter Conditions Min Max Unit
Avalanche ruggedness
EDS(AL)S non-repetitive drain-sourceavalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 31 A;Vsup ≤ 30 V; RGS = 50 Ω; unclamped;Fig. 3
- 7.7 mJ
003aak267
0 30 60 90 120 150 1800
10
20
30
40
Tj (°C)
IDID(A)(A)
Fig. 1. Continuous drain current as a function ofmounting base temperature
Tmb (°C)0 20015050 100
03na19
40
80
120
Pder(%)
0
Fig. 2. Normalized total power dissipation as afunction of mounting base temperature
003aak268
10-3 10-2 10-1 1 1010-1
1
10
102
tAL (ms)
IALIAL(A)(A)
(1)(1)
(2)(2)
Fig. 3. Single pulse avalanche rating; avalanche current as a function of avalanche time
© Nexperia B.V. 2017. All rights reserved
Nexperia PSMN020-30MLCN-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using
TrenchMOS Technology
PSMN020-30MLC All information provided in this document is subject to legal disclaimers.
Product data sheet 4 September 2012 4 / 13
003aak269
10-1 1 10 10210-1
1
10
102
103
VDS (V)
IDID(A)(A)
DCDC
100 ms100 ms10 ms10 ms1 ms1 ms
100 us100 us
tp = 10 ustp = 10 us
Limit RDSon = VDS / IDLimit RDSon = VDS / ID
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristicsTable 5. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistancefrom junction tomounting base
Fig. 5 - 4.32 4.56 K/W
003aak270
10-6 10-5 10-4 10-3 10-2 10-1 110-2
10-1
1
10
tp (s)
Zth(j-mb)Zth(j-mb)(K/W)(K/W)
P
ttpT
tpδ = Tsingle shotsingle shot
δ = 0.5δ = 0.5
0.20.2
0.10.1
0.050.05
0.020.02
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
© Nexperia B.V. 2017. All rights reserved
Nexperia PSMN020-30MLCN-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using
TrenchMOS Technology
PSMN020-30MLC All information provided in this document is subject to legal disclaimers.
Product data sheet 4 September 2012 5 / 13
6. CharacteristicsTable 6. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit
Static characteristics
ID = 13.5 A; VGS = 0 V; Tj(init) = 25 °C;tp ≤ 50 µs
34 - - V
ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V
V(BR)DSS drain-sourcebreakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C 27 - - V
VGS(th) gate-source thresholdvoltage
ID = 1 mA; VDS = VGS; Tj = 25 °C 1.05 1.62 1.95 V
ΔVGS(th)/ΔT gate-source thresholdvoltage variation withtemperature
- -3.5 - mV/K
VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µAIDSS drain leakage current
VDS = 30 V; VGS = 0 V; Tj = 150 °C - - 100 µA
VGS = 16 V; VDS = 0 V; Tj = 25 °C - - 100 nAIGSS gate leakage current
VGS = -16 V; VDS = 0 V; Tj = 25 °C - - 100 nA
VGS = 4.5 V; ID = 5 A; Tj = 25 °C;Fig. 10
- 20.5 27 mΩ
VGS = 4.5 V; ID = 5 A; Tj = 150 °C;Fig. 10; Fig. 11
- - 43.2 mΩ
VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 10 - 14.7 18.1 mΩ
RDSon drain-source on-stateresistance
VGS = 10 V; ID = 5 A; Tj = 150 °C;Fig. 10; Fig. 11
- - 29 mΩ
RG gate resistance f = 1 MHz 0.68 1.37 2.74 Ω
Dynamic characteristics
ID = 5 A; VDS = 15 V; VGS = 10 V;Fig. 12; Fig. 13
- 9.5 - nC
ID = 5 A; VDS = 15 V; VGS = 4.5 V;Fig. 12; Fig. 13
- 4.6 - nC
QG(tot) total gate charge
ID = 0 A; VDS = 0 V; VGS = 10 V - 8.4 - nC
QGS gate-source charge - 1 - nC
QGS(th) pre-threshold gate-source charge
- 0.3 - nC
QGS(th-pl) post-threshold gate-source charge
- 0.7 - nC
QGD gate-drain charge
ID = 5 A; VDS = 15 V; VGS = 4.5 V;Fig. 12; Fig. 13
- 1.7 - nC
VGS(pl) gate-source plateauvoltage
ID = 5 A; VDS = 15 V; Fig. 12; Fig. 13 - 2.4 - V
© Nexperia B.V. 2017. All rights reserved
Nexperia PSMN020-30MLCN-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using
TrenchMOS Technology
PSMN020-30MLC All information provided in this document is subject to legal disclaimers.
Product data sheet 4 September 2012 6 / 13
Symbol Parameter Conditions Min Typ Max Unit
Ciss input capacitance - 430 - pF
Coss output capacitance - 120 - pF
Crss reverse transfercapacitance
VDS = 15 V; VGS = 0 V; f = 1 MHz;Tj = 25 °C; Fig. 14
- 70 - pF
td(on) turn-on delay time - 6.1 - ns
tr rise time - 7.2 - ns
td(off) turn-off delay time - 10.1 - ns
tf fall time
VDS = 15 V; RL = 3 Ω; VGS = 4.5 V;RG(ext) = 5 Ω
- 5.1 - ns
Qoss output charge VGS = 0 V; VDS = 15 V; f = 1 MHz;Tj = 25 °C
- 2.3 - nC
Source-drain diode
VSD source-drain voltage IS = 5 A; VGS = 0 V; Tj = 25 °C; Fig. 15 - 0.89 1.1 V
trr reverse recovery time - 13.5 - ns
Qr recovered charge
IS = 5 A; dIS/dt = -100 A/µs; VGS = 0 V;VDS = 15 V - 5.1 - nC
ta reverse recovery risetime
- 6.3 - ns
tb reverse recovery falltime
VGS = 0 V; IS = 5 A; dIS/dt = -100 A/µs;VDS = 15 V; Fig. 16
- 7.2 - ns
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0 0.5 1 1.5 2 2.5 30
10
20
30
40
VDS (V)
IDID(A)(A)
2.2 V2.2 V2.4 V2.4 V
2.6 V2.6 V
2.8 V2.8 V
VGS = 3 VVGS = 3 V
3.5 V3.5 V
4.5 V4.5 V10 V10 V
Fig. 6. Output characteristics; drain current as afunction of drain-source voltage; typical values
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0 2 4 6 8 10 12 14 160
10
20
30
40
50
VGS (V)
RDSonRDSon
Fig. 7. Drain-source on-state resistance as a functionof gate-source voltage; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia PSMN020-30MLCN-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using
TrenchMOS Technology
PSMN020-30MLC All information provided in this document is subject to legal disclaimers.
Product data sheet 4 September 2012 7 / 13
003aak273
0 5 10 15 20 25 30 35 400
5
10
15
20
25
ID (A)
gfsgfs(S)(S)
Fig. 8. Forward transconductance as a function ofdrain current; typical values
003aak274
0 0.5 1 1.5 2 2.5 3 3.5 40
10
20
30
40
VGS (V)
IDID(A)(A)
Tj = 25°CTj = 25°C150°C150°C
Fig. 9. Transfer characteristics; drain current as afunction of gate-source voltage; typical values
003aak277
0 5 10 15 20 25 30 35 400
20
40
60
80
ID (A)
RDSONRDSon2.8 V2.8 V 3 V3 V 3.5 V3.5 V
4.5 V4.5 V
VGS = 10 VVGS = 10 V
Fig. 10. Drain-source on-state resistance as a functionof drain current; typical values
003aak278
-60 -30 0 30 60 90 120 150 1800
0.4
0.8
1.2
1.6
2
Tj (°C)
aa
10 V10 V
VGS = 4.5 VVGS = 4.5 V
Fig. 11. Normalized drain-source on-state resistancefactor as a function of junction temperature
© Nexperia B.V. 2017. All rights reserved
Nexperia PSMN020-30MLCN-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using
TrenchMOS Technology
PSMN020-30MLC All information provided in this document is subject to legal disclaimers.
Product data sheet 4 September 2012 8 / 13
003aaa508
VGS
VGS(th)
QGS1 QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
Fig. 12. Gate charge waveform definitions
003aak279
0 2 4 6 8 100
2
4
6
8
10
QG (nC)
VGSVGS(V)(V)
15 V15 V
VGS = 8 VVGS = 8 V
24 V24 V
Fig. 13. Gate-source voltage as a function of gatecharge; typical values
003aak280
10-1 1 10 10210
102
103
VDS (V)
CC(pF)(pF)
CissCiss
CossCoss
CrssCrss
Fig. 14. Input, output and reverse transfer capacitancesas a function of drain-source voltage; typicalvalues
003aak281
0 0.2 0.4 0.6 0.8 1 1.20
10
20
30
40
VSD (V)
ISIS(A)(A)
Tj = 25°CTj = 25°C150°C150°C
Fig. 15. Source current as a function of source-drainvoltage; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia PSMN020-30MLCN-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using
TrenchMOS Technology
PSMN020-30MLC All information provided in this document is subject to legal disclaimers.
Product data sheet 4 September 2012 9 / 13
003aaf 444
0
t (s )
ID
(A)
IRM
0.25 IRM
trr
ta tb
Fig. 16. Reverse recovery timing definition
© Nexperia B.V. 2017. All rights reserved
Nexperia PSMN020-30MLCN-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using
TrenchMOS Technology
PSMN020-30MLC All information provided in this document is subject to legal disclaimers.
Product data sheet 4 September 2012 10 / 13
7. Package outline
ReferencesOutlineversion
Europeanprojection Issue date
IEC JEDEC JEITA
SOT1210
sot1210_po
11-12-1912-03-12
Unit(1)
mmmaxnommin
0.90 0.10 0.35 0.20 0.30 2.700.65
A
Dimensions
Note1. Plastic or metal protrusions of 0.15 mm per side are not included.
Plastic single ended surface mounted package (LFPAK33); 8 leads SOT1210
A1 b
0.35
b1 c c1 D(1) θD1 E(1) E1 e
0.65
e1 H
3.40 2.452.35 3.40
L
0.25
Lp
0.500.20 0.10
w y
3.20 2.000.80 0.00 0.25 0.10 0.20 2.500.25 0°1.90 3.20 0.13 0.30
8°
0 5 mm2.5
scale
Ae1
e X
θ
w A
mountingbase
E1c1b1
b
AE
L
D1
HD
detail X
C cA1
LpCy
1 4
Fig. 17. Package outline LFPAK33 (SOT1210)
© Nexperia B.V. 2017. All rights reserved
Nexperia PSMN020-30MLCN-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using
TrenchMOS Technology
PSMN020-30MLC All information provided in this document is subject to legal disclaimers.
Product data sheet 4 September 2012 11 / 13
8. Legal information
8.1 Data sheet statusDocumentstatus [1][2]
Productstatus [3]
Definition
Objective[short] datasheet
Development This document contains data fromthe objective specification for productdevelopment.
Preliminary[short] datasheet
Qualification This document contains data from thepreliminary specification.
Product[short] datasheet
Production This document contains the productspecification.
[1] Please consult the most recently issued document before initiating orcompleting a design.
[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.nexperia.com.
8.2 DefinitionsPreview — The document is a preview version only. The document is stillsubject to formal approval, which may result in modifications or additions.Nexperia does not give any representations or warranties as tothe accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. Nexperia does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequencesof use of such information.
Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local Nexperiasales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed betweenNexperia and its customer, unless Nexperia andcustomer have explicitly agreed otherwise in writing. In no event however,shall an agreement be valid in which the Nexperia productis deemed to offer functions and qualities beyond those described in theProduct data sheet.
8.3 DisclaimersLimited warranty and liability — Information in this document is believedto be accurate and reliable. However, Nexperia does not giveany representations or warranties, expressed or implied, as to the accuracyor completeness of such information and shall have no liability for theconsequences of use of such information. Nexperia takes noresponsibility for the content in this document if provided by an informationsource outside of Nexperia.
In no event shall Nexperia be liable for any indirect, incidental,punitive, special or consequential damages (including - without limitation -lost profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.
Notwithstanding any damages that customer might incur for any reasonwhatsoever, Nexperia’s aggregate and cumulative liability towardscustomer for the products described herein shall be limited in accordancewith the Terms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right tomake changes to information published in this document, including withoutlimitation specifications and product descriptions, at any time and withoutnotice. This document supersedes and replaces all information supplied priorto the publication hereof.
Suitability for use — Nexperia products are not designed,authorized or warranted to be suitable for use in life support, life-critical orsafety-critical systems or equipment, nor in applications where failure ormalfunction of a Nexperia product can reasonably be expectedto result in personal injury, death or severe property or environmentaldamage. Nexperia and its suppliers accept no liability forinclusion and/or use of Nexperia products in such equipment orapplications and therefore such inclusion and/or use is at the customer’s ownrisk.
Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.
Customers are responsible for the design and operation of theirapplications and products using Nexperia products, and Nexperiaaccepts no liability for any assistance with applications orcustomer product design. It is customer’s sole responsibility to determinewhether the Nexperia product is suitable and fit for thecustomer’s applications and products planned, as well as for the plannedapplication and use of customer’s third party customer(s). Customers shouldprovide appropriate design and operating safeguards to minimize the risksassociated with their applications and products.
Nexperia does not accept any liability related to any default,damage, costs or problem which is based on any weakness or defaultin the customer’s applications or products, or the application or use bycustomer’s third party customer(s). Customer is responsible for doing allnecessary testing for the customer’s applications and products using Nexperiaproducts in order to avoid a default of the applicationsand the products or of the application or use by customer’s third partycustomer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.
Terms and conditions of commercial sale — Nexperiaproducts are sold subject to the general terms and conditions of commercialsale, as published at http://www.nexperia.com/profile/terms, unless otherwiseagreed in a valid written individual agreement. In case an individualagreement is concluded only the terms and conditions of the respectiveagreement shall apply. Nexperia hereby expressly objects toapplying the customer’s general terms and conditions with regard to thepurchase of Nexperia products by customer.
No offer to sell or license — Nothing in this document may be interpretedor construed as an offer to sell products that is open for acceptance or the
© Nexperia B.V. 2017. All rights reserved
Nexperia PSMN020-30MLCN-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using
TrenchMOS Technology
PSMN020-30MLC All information provided in this document is subject to legal disclaimers.
Product data sheet 4 September 2012 12 / 13
grant, conveyance or implication of any license under any copyrights, patentsor other industrial or intellectual property rights.
Export control — This document as well as the item(s) described hereinmay be subject to export control regulations. Export might require a priorauthorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expresslystates that this specific Nexperia product is automotive qualified,the product is not suitable for automotive use. It is neither qualified nortested in accordance with automotive testing or application requirements.Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use inautomotive applications to automotive specifications and standards,customer (a) shall use the product without Nexperia’s warrantyof the product for such automotive applications, use and specifications, and(b) whenever customer uses the product for automotive applications beyondNexperia’s specifications such use shall be solely at customer’sown risk, and (c) customer fully indemnifies Nexperia for anyliability, damages or failed product claims resulting from customer design anduse of the product for automotive applications beyond Nexperia’sstandard warranty and Nexperia’s product specifications.
Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancybetween the translated and English versions.
8.4 TrademarksNotice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.
© Nexperia B.V. 2017. All rights reserved
Nexperia PSMN020-30MLCN-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using
TrenchMOS Technology
PSMN020-30MLC All information provided in this document is subject to legal disclaimers.
Product data sheet 4 September 2012 13 / 13
9. Contents1 Product profile ....................................................... 11.1 General description .............................................. 11.2 Features and benefits ...........................................11.3 Applications .......................................................... 11.4 Quick reference data ............................................ 12 Pinning information ...............................................23 Ordering information .............................................24 Limiting values .......................................................25 Thermal characteristics .........................................46 Characteristics .......................................................57 Package outline ................................................... 108 Legal information .................................................118.1 Data sheet status ............................................... 118.2 Definitions ...........................................................118.3 Disclaimers .........................................................118.4 Trademarks ........................................................ 12
© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 04 September 2012